CN103633153A - Solar component with protective layer - Google Patents
Solar component with protective layer Download PDFInfo
- Publication number
- CN103633153A CN103633153A CN201210296638.5A CN201210296638A CN103633153A CN 103633153 A CN103633153 A CN 103633153A CN 201210296638 A CN201210296638 A CN 201210296638A CN 103633153 A CN103633153 A CN 103633153A
- Authority
- CN
- China
- Prior art keywords
- layer
- negative electrode
- type silicon
- antireflection film
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011241 protective layer Substances 0.000 title claims abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a solar component with a protective layer. The solar component is provided with a negative electrode layer, an N-type silicon layer, a P-type silicon layer and a positive electrode layer which are laminated in turn. The solar component is also provided with an antireflection film layer which is arranged between the negative electrode layer and the N-type silicon layer. A PECVD deposition silicon nitride film is adopted to act as the antireflection film layer of the solar component so that a main effect of reducing reflection of light is achieved. Besides, the silicon nitride film comprises large amount of hydrogen so that passivation can be greatly performed on surface suspension keys in silicon, and thus carrier mobility can be enhanced.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of solar components with protective layer.
Background technology
Solar module, is also solar panel, is the core in solar power system, is also most important part in solar power system.Solar cell is directly light energy conversion to be become to the device of electric energy by photoelectric effect or Photochemical effects.Solar cell, as green energy resource, more and more receives people's concern.Crystalline silicon material quality plays vital effect to the efficiency of solar cell, and crystalline silicon substrate material surface defect concentration is very high, as a large amount of dangling bonds, impurity and scission of link etc., causes silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, the solar components with protective layer that a kind of conversion efficiency is high is provided.
The technical scheme that realizes the object of the invention is: a kind of solar components with protective layer, has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also there is antireflection film layer; Described antireflection film layer is arranged between negative electrode layer and N-type silicon layer.
Described in technique scheme, antireflection film layer is silicon nitride layer.
Described in technique scheme, negative electrode layer and positive electrode are silver layer.
Described in technique scheme, the surface of negative electrode layer is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by half tone graphic printing.
Described in technique scheme, on anodal layer, there is back electrode and back of the body electric field.
Adopt after technique scheme, the present invention has following positive effect:
(1) the present invention adopts PECVD silicon nitride film as the antireflection film layer of solar components, Main Function is to reduce reflection of light, and silicon nitride film contains a large amount of hydrogen, the surperficial dangling bonds in can well passivation silicon, thus improved carrier mobility.
(2) the present invention's application silver paste is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of conductivity that electrode is good, solderability and back of the body electric field, had more excellent printing performance, adhesive force is high, flexibility is low and conversion efficiency is high advantage.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein below
Fig. 1 is structural representation of the present invention;
1. negative electrode layers in figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. antireflection film layers.
Embodiment
(embodiment 1)
See Fig. 1, the present invention has negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4 and the antireflection film layer 5 stacking gradually; Negative electrode layer 1 and positive electrode 1 are silver layer, and the surface of negative electrode layer 1 is provided with main grid 11 and the secondary grid 12 vertical with main grid 11 and that equidistantly distribute that form by half tone graphic printing; On anodal layer 4, there is back electrode 41 and back of the body electric field 42; Antireflection film layer 5 is silicon nitride layer, and antireflection film layer 5 is arranged between negative electrode layer 1 and N-type silicon layer 2.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. with a solar components for protective layer, there is the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also there is antireflection film layer (5); Described antireflection film layer (5) is arranged between negative electrode layer (1) and N-type silicon layer (2).
2. the solar components with protective layer according to claim 1, is characterized in that: described antireflection film layer (5) is silicon nitride layer.
3. the solar components with protective layer according to claim 1 and 2, is characterized in that: described negative electrode layer (1) and positive electrode (1) are silver layer.
4. the solar components with protective layer according to claim 3, is characterized in that: the surface of described negative electrode layer (1) is provided with main grid (11) and the secondary grid (12) vertical with main grid (11) and that equidistantly distribute that form by half tone graphic printing.
5. the solar components with protective layer according to claim 4, is characterized in that: on described anodal layer (4), have back electrode (41) and back of the body electric field (42).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210296638.5A CN103633153A (en) | 2012-08-20 | 2012-08-20 | Solar component with protective layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210296638.5A CN103633153A (en) | 2012-08-20 | 2012-08-20 | Solar component with protective layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103633153A true CN103633153A (en) | 2014-03-12 |
Family
ID=50213976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210296638.5A Pending CN103633153A (en) | 2012-08-20 | 2012-08-20 | Solar component with protective layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103633153A (en) |
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2012
- 2012-08-20 CN CN201210296638.5A patent/CN103633153A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140312 |