CN103633152A - High conversion rate solar component - Google Patents
High conversion rate solar component Download PDFInfo
- Publication number
- CN103633152A CN103633152A CN201210296604.6A CN201210296604A CN103633152A CN 103633152 A CN103633152 A CN 103633152A CN 201210296604 A CN201210296604 A CN 201210296604A CN 103633152 A CN103633152 A CN 103633152A
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- China
- Prior art keywords
- layer
- high conversion
- negative electrode
- type silicon
- solar components
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 238000005247 gettering Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a high conversion rate solar component which is provided with a negative electrode layer, an N-type silicon layer, a P-type silicon layer and a positive electrode layer which are laminated in turn. The high conversion rate solar component is also provided with a passivation layer which is arranged between the negative electrode layer and the N-type silicon layer. A silicon dioxide layer is arranged between the positive electrode layer and the P-type silicon layer, and the silicon dioxide layer has gettering and passivation functions.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of solar components of high conversion.
Background technology
Solar module, is also solar panel, is the core in solar power system, is also most important part in solar power system.Solar cell is directly light energy conversion to be become to the device of electric energy by photoelectric effect or Photochemical effects.Solar cell, as green energy resource, more and more receives people's concern.Crystalline silicon material quality plays vital effect to the efficiency of solar cell, and crystalline silicon substrate material surface defect concentration is very high, as a large amount of dangling bonds, impurity and scission of link etc., causes silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, the solar components that a kind of conversion efficiency is high is provided.
The technical scheme that realizes the object of the invention is: a kind of solar components of high conversion, has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also there is passivation layer; Described passivation layer is arranged between negative electrode layer and N-type silicon layer.
Described in technique scheme, passivation layer is silicon dioxide layer.
Described in technique scheme, negative electrode and positive electrode are aluminium lamination.
Described in technique scheme, the surface of negative electrode layer is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by half tone graphic printing.
Described in technique scheme, on anodal layer, there is back electrode and back of the body electric field.
Adopt after technique scheme, the present invention has following positive effect:
(1) passivation layer of the present invention is arranged between anodal layer and P type silicon layer; Passivation layer is silicon dioxide layer, and silicon dioxide layer has the effect of gettering, passivation.
(2) the present invention's application silver paste is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of conductivity that electrode is good, solderability and back of the body electric field, had more excellent printing performance, adhesive force is high, flexibility is low and conversion efficiency is high advantage.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein below
Fig. 1 is structural representation of the present invention;
1. negative electrode layers in figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. passivation layers.
Embodiment
(embodiment 1)
See Fig. 1, the present invention has negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4 and the passivation layer 5 stacking gradually; Negative electrode layer 1 and anodal layer 4 are silver layer, and the surface of negative electrode layer 1 is provided with main grid 11 and the secondary grid 12 vertical with main grid 11 and that equidistantly distribute that form by half tone graphic printing; On anodal layer 4, there is back electrode 41 and back of the body electric field 42; Passivation layer 5 is silicon dioxide layer, and passivation layer 5 is arranged between negative electrode layer 1 and N-type silicon layer 2.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. a solar components for high conversion, has the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also there is passivation layer (5); Described passivation layer (5) is arranged between negative electrode layer (1) and N-type silicon layer (2).
2. the solar components of high conversion according to claim 1, is characterized in that: described passivation layer (5) is silicon dioxide layer.
3. the solar components of high conversion according to claim 1 and 2, is characterized in that: described negative electrode (1) and positive electrode (4) are aluminium lamination.
4. the solar components of high conversion according to claim 3, is characterized in that: the surface of described negative electrode layer (1) is provided with main grid (11) and the secondary grid (12) vertical with main grid (11) and that equidistantly distribute that form by half tone graphic printing.
5. the solar components of high conversion according to claim 4, is characterized in that: on described anodal layer (4), have back electrode (41) and back of the body electric field (42).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210296604.6A CN103633152A (en) | 2012-08-20 | 2012-08-20 | High conversion rate solar component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210296604.6A CN103633152A (en) | 2012-08-20 | 2012-08-20 | High conversion rate solar component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103633152A true CN103633152A (en) | 2014-03-12 |
Family
ID=50213975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210296604.6A Pending CN103633152A (en) | 2012-08-20 | 2012-08-20 | High conversion rate solar component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103633152A (en) |
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2012
- 2012-08-20 CN CN201210296604.6A patent/CN103633152A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140312 |