CN103633164A - Crystalline silicon solar cell component with protective layer - Google Patents
Crystalline silicon solar cell component with protective layer Download PDFInfo
- Publication number
- CN103633164A CN103633164A CN201210297083.6A CN201210297083A CN103633164A CN 103633164 A CN103633164 A CN 103633164A CN 201210297083 A CN201210297083 A CN 201210297083A CN 103633164 A CN103633164 A CN 103633164A
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- China
- Prior art keywords
- layer
- silicon
- type silicon
- solar
- antireflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000011241 protective layer Substances 0.000 title claims abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 6
- 210000003850 cellular structure Anatomy 0.000 title abstract 4
- 239000010410 layer Substances 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a crystalline silicon solar cell component with a protective layer. The crystalline silicon solar cell component is provided with a negative electrode layer, an N-type silicon layer, a P-type silicon layer and a positive electrode layer which are laminated in turn. The crystalline silicon solar cell component is also provided with an antireflection film layer and passive film layers. The antireflection film layer is arranged between the negative electrode layer and the N-type silicon layer. One passive film layer is arranged between the antireflection film layer and the N-type silicon layer, and another passive film layer is arranged between the positive electrode layer and the P-type silicon layer. A PECVD deposition silicon nitride film is adopted to act as the antireflection film layer of the solar component so that reflection of light can be reduced. Besides, the silicon nitride film comprises large amount of hydrogen so that passivation can be greatly performed on surface suspension keys in silicon, and carrier mobility can be enhanced. Meanwhile, a silicon dioxide film is deposited between the silicon nitride film and the N-type silicon so that reflection loss of incident light on the surface of solar cells can be more effectively reduced, amount of absorbed sunlight of the solar component can be enhanced, all sunlight spectrums from all angles can be absorbed by the solar component, and thus economic benefits of a solar power station can be substantially improved.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of crystal silicon solar battery component with protective layer.
Background technology
Solar module, is also solar panel, is the core in solar power system, is also most important part in solar power system.Solar cell is directly light energy conversion to be become to the device of electric energy by photoelectric effect or Photochemical effects.Solar cell, as green energy resource, more and more receives people's concern.Crystalline silicon material quality plays vital effect to the efficiency of solar cell, and crystalline silicon substrate material surface defect concentration is very high, as a large amount of dangling bonds, impurity and scission of link etc., causes silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, the crystal silicon solar battery component with protective layer that a kind of conversion efficiency is high is provided.
The technical scheme that realizes the object of the invention is: a kind of crystal silicon solar battery component with protective layer, has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also there is antireflection film layer and passivation film; Described antireflection film layer is arranged between negative electrode layer and N-type silicon layer; Between described antireflection film layer and N-type silicon layer and between anodal layer and P type silicon layer, all there is passivation film.
Described in technique scheme, antireflection film layer is silicon nitride layer.
Described in technique scheme, passivation film is silicon dioxide layer.
Described in technique scheme, negative electrode layer and anodal layer are silver layer.
Described in technique scheme, the surface of negative electrode layer is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by half tone graphic printing.
Described in technique scheme, on anodal layer, there is back electrode and back of the body electric field.
Adopt after technique scheme, the present invention has following positive effect:
(1) the present invention adopts PECVD silicon nitride film as the antireflection film layer of solar components, Main Function is to reduce reflection of light, and silicon nitride film contains a large amount of hydrogen, the surperficial dangling bonds in can well passivation silicon, thus improved carrier mobility; Simultaneously, deposition of silica film between silicon nitride film and N-type silicon, can more effective minimizing incident light in the reflection loss of solar cell surface, improve the amount that solar components absorbs sunlight, and can allow solar components absorb the whole sunlight spectrum from all angles, thereby the economic benefit of solar power station is greatly improved.
(2) between anodal layer of the present invention and P type silicon layer, be provided with passivation film; Passivation film is silicon dioxide layer, and silicon dioxide has the effect of gettering, passivation, can improve reflection efficiency.
(3) the present invention's application silver paste is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of conductivity that electrode is good, solderability and back of the body electric field, had more excellent printing performance, adhesive force is high, flexibility is low and conversion efficiency is high advantage.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein below
Fig. 1 is structural representation of the present invention;
1. negative electrode layers in figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. antireflection film layer, 6. passivation films.
Embodiment
(embodiment 1)
See Fig. 1, the present invention has negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4, antireflection film layer 5 and the passivation film 6 stacking gradually; Negative electrode layer 1 and anodal layer 4 are silver layer; The surface of negative electrode layer 1 is provided with main grid 11 and the secondary grid 12 vertical with main grid 11 and that equidistantly distribute that form by half tone graphic printing; On anodal layer 4, there is back electrode 41 and back of the body electric field 42; Antireflection film layer 6 is arranged between negative electrode layer 1 and N-type silicon layer 2; Between antireflection film layer 6 and N-type silicon layer 2 and between anodal layer 4 and P type silicon layer 3, all there is passivation film 5.Wherein, antireflection film layer 5 is silicon nitride layer; Passivation film 6 is silicon dioxide layer.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. with a crystal silicon solar battery component for protective layer, there is the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also there is antireflection film layer (5) and passivation film (6); Described antireflection film layer (6) is arranged between negative electrode layer (1) and N-type silicon layer (2); Between described antireflection film layer (6) and N-type silicon layer (2) and between anodal layer (4) and P type silicon layer (3), all there is passivation film (5).
2. the crystal silicon solar battery component with protective layer according to claim 1, is characterized in that: described antireflection film layer (5) is silicon nitride layer.
3. the crystal silicon solar battery component with protective layer according to claim 1 and 2, is characterized in that: described passivation film (6) is silicon dioxide layer.
4. the crystal silicon solar battery component with protective layer according to claim 3, is characterized in that: described negative electrode layer (1) and anodal layer (4) are silver layer.
5. the crystal silicon solar battery component with protective layer according to claim 4, is characterized in that: the surface of described negative electrode layer (1) is provided with main grid (11) and the secondary grid (12) vertical with main grid (11) and that equidistantly distribute that form by half tone graphic printing.
6. the crystal silicon solar battery component with protective layer according to claim 5, is characterized in that: on described anodal layer (4), have back electrode (41) and back of the body electric field (42).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210297083.6A CN103633164A (en) | 2012-08-20 | 2012-08-20 | Crystalline silicon solar cell component with protective layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210297083.6A CN103633164A (en) | 2012-08-20 | 2012-08-20 | Crystalline silicon solar cell component with protective layer |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103633164A true CN103633164A (en) | 2014-03-12 |
Family
ID=50213986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210297083.6A Pending CN103633164A (en) | 2012-08-20 | 2012-08-20 | Crystalline silicon solar cell component with protective layer |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103633164A (en) |
-
2012
- 2012-08-20 CN CN201210297083.6A patent/CN103633164A/en active Pending
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PB01 | Publication | ||
PB01 | Publication | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140312 |