CN103633164A - Crystalline silicon solar cell component with protective layer - Google Patents

Crystalline silicon solar cell component with protective layer Download PDF

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Publication number
CN103633164A
CN103633164A CN201210297083.6A CN201210297083A CN103633164A CN 103633164 A CN103633164 A CN 103633164A CN 201210297083 A CN201210297083 A CN 201210297083A CN 103633164 A CN103633164 A CN 103633164A
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CN
China
Prior art keywords
layer
silicon
type silicon
solar
antireflection film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210297083.6A
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Chinese (zh)
Inventor
金刘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Green Power PV Co Ltd
Original Assignee
Jiangsu Green Power PV Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Green Power PV Co Ltd filed Critical Jiangsu Green Power PV Co Ltd
Priority to CN201210297083.6A priority Critical patent/CN103633164A/en
Publication of CN103633164A publication Critical patent/CN103633164A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a crystalline silicon solar cell component with a protective layer. The crystalline silicon solar cell component is provided with a negative electrode layer, an N-type silicon layer, a P-type silicon layer and a positive electrode layer which are laminated in turn. The crystalline silicon solar cell component is also provided with an antireflection film layer and passive film layers. The antireflection film layer is arranged between the negative electrode layer and the N-type silicon layer. One passive film layer is arranged between the antireflection film layer and the N-type silicon layer, and another passive film layer is arranged between the positive electrode layer and the P-type silicon layer. A PECVD deposition silicon nitride film is adopted to act as the antireflection film layer of the solar component so that reflection of light can be reduced. Besides, the silicon nitride film comprises large amount of hydrogen so that passivation can be greatly performed on surface suspension keys in silicon, and carrier mobility can be enhanced. Meanwhile, a silicon dioxide film is deposited between the silicon nitride film and the N-type silicon so that reflection loss of incident light on the surface of solar cells can be more effectively reduced, amount of absorbed sunlight of the solar component can be enhanced, all sunlight spectrums from all angles can be absorbed by the solar component, and thus economic benefits of a solar power station can be substantially improved.

Description

Crystal silicon solar battery component with protective layer
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of crystal silicon solar battery component with protective layer.
Background technology
Solar module, is also solar panel, is the core in solar power system, is also most important part in solar power system.Solar cell is directly light energy conversion to be become to the device of electric energy by photoelectric effect or Photochemical effects.Solar cell, as green energy resource, more and more receives people's concern.Crystalline silicon material quality plays vital effect to the efficiency of solar cell, and crystalline silicon substrate material surface defect concentration is very high, as a large amount of dangling bonds, impurity and scission of link etc., causes silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, the crystal silicon solar battery component with protective layer that a kind of conversion efficiency is high is provided.
The technical scheme that realizes the object of the invention is: a kind of crystal silicon solar battery component with protective layer, has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also there is antireflection film layer and passivation film; Described antireflection film layer is arranged between negative electrode layer and N-type silicon layer; Between described antireflection film layer and N-type silicon layer and between anodal layer and P type silicon layer, all there is passivation film.
Described in technique scheme, antireflection film layer is silicon nitride layer.
Described in technique scheme, passivation film is silicon dioxide layer.
Described in technique scheme, negative electrode layer and anodal layer are silver layer.
Described in technique scheme, the surface of negative electrode layer is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by half tone graphic printing.
Described in technique scheme, on anodal layer, there is back electrode and back of the body electric field.
Adopt after technique scheme, the present invention has following positive effect:
(1) the present invention adopts PECVD silicon nitride film as the antireflection film layer of solar components, Main Function is to reduce reflection of light, and silicon nitride film contains a large amount of hydrogen, the surperficial dangling bonds in can well passivation silicon, thus improved carrier mobility; Simultaneously, deposition of silica film between silicon nitride film and N-type silicon, can more effective minimizing incident light in the reflection loss of solar cell surface, improve the amount that solar components absorbs sunlight, and can allow solar components absorb the whole sunlight spectrum from all angles, thereby the economic benefit of solar power station is greatly improved.
(2) between anodal layer of the present invention and P type silicon layer, be provided with passivation film; Passivation film is silicon dioxide layer, and silicon dioxide has the effect of gettering, passivation, can improve reflection efficiency.
(3) the present invention's application silver paste is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of conductivity that electrode is good, solderability and back of the body electric field, had more excellent printing performance, adhesive force is high, flexibility is low and conversion efficiency is high advantage.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein below
Fig. 1 is structural representation of the present invention;
1. negative electrode layers in figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. antireflection film layer, 6. passivation films.
Embodiment
(embodiment 1)
See Fig. 1, the present invention has negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4, antireflection film layer 5 and the passivation film 6 stacking gradually; Negative electrode layer 1 and anodal layer 4 are silver layer; The surface of negative electrode layer 1 is provided with main grid 11 and the secondary grid 12 vertical with main grid 11 and that equidistantly distribute that form by half tone graphic printing; On anodal layer 4, there is back electrode 41 and back of the body electric field 42; Antireflection film layer 6 is arranged between negative electrode layer 1 and N-type silicon layer 2; Between antireflection film layer 6 and N-type silicon layer 2 and between anodal layer 4 and P type silicon layer 3, all there is passivation film 5.Wherein, antireflection film layer 5 is silicon nitride layer; Passivation film 6 is silicon dioxide layer.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (6)

1. with a crystal silicon solar battery component for protective layer, there is the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also there is antireflection film layer (5) and passivation film (6); Described antireflection film layer (6) is arranged between negative electrode layer (1) and N-type silicon layer (2); Between described antireflection film layer (6) and N-type silicon layer (2) and between anodal layer (4) and P type silicon layer (3), all there is passivation film (5).
2. the crystal silicon solar battery component with protective layer according to claim 1, is characterized in that: described antireflection film layer (5) is silicon nitride layer.
3. the crystal silicon solar battery component with protective layer according to claim 1 and 2, is characterized in that: described passivation film (6) is silicon dioxide layer.
4. the crystal silicon solar battery component with protective layer according to claim 3, is characterized in that: described negative electrode layer (1) and anodal layer (4) are silver layer.
5. the crystal silicon solar battery component with protective layer according to claim 4, is characterized in that: the surface of described negative electrode layer (1) is provided with main grid (11) and the secondary grid (12) vertical with main grid (11) and that equidistantly distribute that form by half tone graphic printing.
6. the crystal silicon solar battery component with protective layer according to claim 5, is characterized in that: on described anodal layer (4), have back electrode (41) and back of the body electric field (42).
CN201210297083.6A 2012-08-20 2012-08-20 Crystalline silicon solar cell component with protective layer Pending CN103633164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210297083.6A CN103633164A (en) 2012-08-20 2012-08-20 Crystalline silicon solar cell component with protective layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210297083.6A CN103633164A (en) 2012-08-20 2012-08-20 Crystalline silicon solar cell component with protective layer

Publications (1)

Publication Number Publication Date
CN103633164A true CN103633164A (en) 2014-03-12

Family

ID=50213986

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210297083.6A Pending CN103633164A (en) 2012-08-20 2012-08-20 Crystalline silicon solar cell component with protective layer

Country Status (1)

Country Link
CN (1) CN103633164A (en)

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Application publication date: 20140312