CN102969368A - Electrode structure of solar cell piece - Google Patents
Electrode structure of solar cell piece Download PDFInfo
- Publication number
- CN102969368A CN102969368A CN2012105250269A CN201210525026A CN102969368A CN 102969368 A CN102969368 A CN 102969368A CN 2012105250269 A CN2012105250269 A CN 2012105250269A CN 201210525026 A CN201210525026 A CN 201210525026A CN 102969368 A CN102969368 A CN 102969368A
- Authority
- CN
- China
- Prior art keywords
- electrode
- grid line
- main grid
- solar cell
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an electrode structure of a solar cell piece. The electrode structure comprises a back electrode (4) and a front grid electrode, wherein the back electrode (4) is located on the back of the solar cell piece; the front grid electrode is located on the front of the solar cell piece; the front grid electrode comprises four major grid lines (1) parallel to each other and a plurality of auxiliary grid lines (3) vertical to the major grid lines (1); two of the major grid lines (1) are located at two sides respectively and the other two major grid lines are located in the centre; and an interval (2) between the two middle major grid lines (1) is 0.2-2mm. According to the electrode structure of the solar cell piece, a plurality of independent generating units are arranged; and furthermore, the independent units can be used in parallel connection or alone.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly relate to a kind of electrode structure of solar battery sheet.
Background technology
Along with day being becoming tight of global energy, solar energy with pollution-free, the market space is large etc., and exclusive advantage is in widespread attention.The advantages such as that photovoltaic generation has is safe and reliable, noiseless, failure rate is low, solar cell is the critical piece that in the photovoltaic power generation technology solar energy is converted into electric energy.
The P type layer that common crystal silicon solar energy battery is made of backplate, semi-conducting material, N-type layer, P-N knot, antireflection film, positive gate electrode etc. partly form.When solar irradiation was mapped to solar cell surface, antireflection film and suede structure can effectively reduce the light reflection loss of battery surface.After semiconductor structure in the solar cell absorbs solar energy.Excite to produce electronics, hole pair, electronics, hole are to by the inner P of semiconductor-N knot built-in field separately, and electron stream enters the N district, the hole flows into the P district, form the photoproduction electric field, if with crystalline silicon too can battery positive and negative electrode be connected with external circuit, just have photogenerated current to pass through in the external circuit.
Most crystal silicon solar energy battery batteries adopts P type silicon chip at present, through forming P-N knot after the phosphorus diffusion, make back electrode and back surface field at P type silicon, make positive gate electrode at the N face that diffuses to form, the photovoltaic effect of whole devices use P-N knot comes work.For the monocrystalline silicon of 125mm * 125mm or two main grid lines of the general employing of positive gate electrode of polycrystal silicon cell, rise to three main grid lines for the monocrystalline silicon of 156mm * 156mm or the positive gate electrode of polycrystal silicon cell.And then add the secondary grid line of the even and parallel distribution of some perpendicular to the both sides of main grid line.The electric current that crystal silicon solar energy battery produces under illumination is by secondary grid line and main grid line mutual conduction, and the main grid line consists of the negative electrode of battery, and electric current converges on the main grid line and derives.But the electric current collection mode of this battery also exists lower root not enough, namely can only unify generating, only has a kind of supply power mode, when power demands is not enough, tends to cause waste.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of electrode structure with solar battery sheet of a plurality of Independent Power Generations unit is provided, the each several part separate unit can merge use after parallel connection, also can be used as independent generator unit and uses.
The technical scheme that realizes the object of the invention is: a kind of electrode structure of solar battery sheet, comprise back electrode and positive gate electrode, back electrode is distributed in the back side of solar battery sheet, positive gate electrode is distributed in the front of solar battery sheet, positive gate electrode comprises the secondary grid line that the main grid line that is parallel to each other and Duo Gen and main grid line are perpendicular, and the main grid line has four, and wherein two are arranged in both sides, other two be arranged in the middle of, and the interval between middle two main grid lines wide be 0.2mm ~ 2mm.
Further, described back electrode is comprised of four parallel lines, and wherein two are arranged in both sides, other two be arranged in the middle of, and the interval between middle two back electrodes wide be 0.2mm ~ 2mm.
Further, the width of described main grid line is 0.5mm ~ 2mm.
After having adopted technique scheme, the main grid line has adopted four, wherein two are arranged in both sides, other two are arranged in middle, and the interval between middle two main grid lines is wide to be 0.2mm ~ 2mm, take two main grids as a formant battery is divided into left and right sides two parts like this, battery front side left and right sides two parts electrode does not link mutually, can independently carry out electric current collection.Also can be by component process with the use in parallel of left and right sides two parts, the waste when having avoided power demands not enough.
Description of drawings
Fig. 1 is main TV structure schematic diagram of the present invention;
Fig. 2 is backsight structural representation of the present invention.
Be labeled as among the figure: 1, main grid line, 2, the interval between the main grid line, 3, secondary grid line, 4, back electrode, 5, the interval between the back electrode, 6, cell piece, 7, back surface field.
Embodiment
Content of the present invention is easier to be expressly understood in order to make, and the below is according to specific embodiment and by reference to the accompanying drawings, and the present invention is further detailed explanation,
As shown in Figure 1, a kind of electrode structure of solar battery sheet, comprise back electrode 4 and positive gate electrode, back electrode 4 is distributed in the back side of solar battery sheet, and positive gate electrode is distributed in the front of solar battery sheet, and positive gate electrode comprises the secondary grid line 3 that the main grid line 1 that is parallel to each other and Duo Gen and main grid line 1 are perpendicular, main grid line 1 has four, wherein two are arranged in both sides, other two be arranged in the middle of, and the interval between middle two main grid lines 12 wide be 0.2mm ~ 2mm.The width of main grid line 1 is 0.5mm ~ 2mm.
As shown in Figure 2, described back electrode 4 is comprised of four parallel lines, and wherein two are arranged in both sides, other two be arranged in the middle of, and the interval between middle two back electrodes 45 wide be 0.2mm ~ 2mm.
The electrode of making solar battery sheet 6 can adopt the method for any making electrodes such as silk screen printing, evaporation, sputter, plating, spraying, in the present embodiment, adopts the mode of silk screen printing to make back surface field 7, back electrode 4 and positive gate electrode.At first choose the p type single crystal silicon sheet that is up to the standards, specification is 156mm * 156mm, and process chemical cleaning and surface wool manufacturing increase Optical Absorption to form pyramid structure at monocrystalline silicon piece, improve short circuit current and the conversion efficiency of battery; Produce the crystal silicon layer of N-type at the p type single crystal silicon sheet in techniques such as utilizing High temperature diffusion or Implantation, so just, form P-N junction structure, then remove the diffusion layer at edge through plasma etching, remove the phosphorosilicate glass layer that diffuses to form by chemical corrosion, the deposit silicon nitride anti-reflection film, described silicon nitride anti-reflection film can reduce the light emissivity of silicon chip surface, utilize simultaneously hydrionic one-tenth key to strengthen silicon chip surface and the interior passivation effect of body, reduce the compound of charge carrier, utilize at last silk screen printing to make back electrode 4 and positive gate electrode.
In the present embodiment, at first adopt screen printing mode printing back electrode 4, back electrode 4 is formed by silver-colored aluminium paste sintering.Again in the back surface field 7 of the back up solar cell of described solar battery sheet 6.In the present embodiment, back electrode has 4.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. the electrode structure of a solar battery sheet, comprise back electrode (4) and positive gate electrode, back electrode (4) is distributed in the back side of solar battery sheet, positive gate electrode is distributed in the front of solar battery sheet, positive gate electrode comprises the secondary grid line (3) that the main grid line (1) that is parallel to each other and many and main grid line (1) are perpendicular, it is characterized in that: main grid line (1) has four, wherein two are arranged in both sides, other two be arranged in the middle of, and the interval (2) between middle two main grid lines (1) wide be 0.2mm ~ 2mm.
2. the electrode structure of solar battery sheet according to claim 1, it is characterized in that: described back electrode (4) is comprised of four parallel lines, wherein two are arranged in both sides, other two be arranged in the middle of, and the interval (5) between middle two back electrodes (4) wide be 0.2mm ~ 2mm.
3. the electrode structure of solar battery sheet according to claim 2, it is characterized in that: the width of described main grid line (1) is 0.5mm ~ 2mm.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525026.9A CN102969368B (en) | 2012-12-10 | 2012-12-10 | Electrode structure of solar cell piece |
| PCT/CN2013/084165 WO2014090009A1 (en) | 2012-12-10 | 2013-09-25 | Electrode structure of solar cell plate |
| JP2015546816A JP2016503959A (en) | 2012-12-10 | 2013-09-25 | Solar cell slice electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525026.9A CN102969368B (en) | 2012-12-10 | 2012-12-10 | Electrode structure of solar cell piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102969368A true CN102969368A (en) | 2013-03-13 |
| CN102969368B CN102969368B (en) | 2015-06-10 |
Family
ID=47799386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210525026.9A Active CN102969368B (en) | 2012-12-10 | 2012-12-10 | Electrode structure of solar cell piece |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2016503959A (en) |
| CN (1) | CN102969368B (en) |
| WO (1) | WO2014090009A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606575A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Solar cell |
| CN103606570A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Solar cell |
| WO2014090009A1 (en) * | 2012-12-10 | 2014-06-19 | 常州天合光能有限公司 | Electrode structure of solar cell plate |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11088294B2 (en) | 2016-06-30 | 2021-08-10 | Byd Company Limited | Photovoltaic cell assembly, photovoltaic cell array, and solar cell assembly |
| CN110137289B (en) * | 2018-02-08 | 2024-05-10 | 国家电投集团新能源科技有限公司 | Metal gate line electrode of silicon heterojunction solar cell and silicon heterojunction solar cell |
| CN109585590A (en) * | 2019-01-21 | 2019-04-05 | 南通苏民新能源科技有限公司 | A kind of solar battery sheet, component and production method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11298019A (en) * | 1998-04-07 | 1999-10-29 | Sharp Corp | Solar battery and manufacture of the solar battery |
| JP2004179335A (en) * | 2002-11-26 | 2004-06-24 | Kyocera Corp | Solar cell element and manufacturing method therefor |
| CN202275839U (en) * | 2011-09-06 | 2012-06-13 | 扬州天华光电科技有限公司 | Solar cell |
| CN202957262U (en) * | 2012-12-10 | 2013-05-29 | 常州天合光能有限公司 | Electrode structure of solar cell |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002299666A (en) * | 2001-03-29 | 2002-10-11 | Kanegafuchi Chem Ind Co Ltd | See-through-type thin-film solar cell module |
| JP2008135655A (en) * | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | Solar battery module, manufacturing method therefor, and solar battery cell |
| JP5368022B2 (en) * | 2008-07-17 | 2013-12-18 | 信越化学工業株式会社 | Solar cell |
| CN102615954A (en) * | 2012-04-16 | 2012-08-01 | 中利腾晖光伏科技有限公司 | Solar battery positive electrode screen |
| CN102664199B (en) * | 2012-05-16 | 2015-04-08 | 中利腾晖光伏科技有限公司 | Solar cell applicable to solar simulator tester, and manufacturing method thereof |
| CN102969368B (en) * | 2012-12-10 | 2015-06-10 | 常州天合光能有限公司 | Electrode structure of solar cell piece |
-
2012
- 2012-12-10 CN CN201210525026.9A patent/CN102969368B/en active Active
-
2013
- 2013-09-25 WO PCT/CN2013/084165 patent/WO2014090009A1/en active Application Filing
- 2013-09-25 JP JP2015546816A patent/JP2016503959A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11298019A (en) * | 1998-04-07 | 1999-10-29 | Sharp Corp | Solar battery and manufacture of the solar battery |
| JP2004179335A (en) * | 2002-11-26 | 2004-06-24 | Kyocera Corp | Solar cell element and manufacturing method therefor |
| CN202275839U (en) * | 2011-09-06 | 2012-06-13 | 扬州天华光电科技有限公司 | Solar cell |
| CN202957262U (en) * | 2012-12-10 | 2013-05-29 | 常州天合光能有限公司 | Electrode structure of solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014090009A1 (en) * | 2012-12-10 | 2014-06-19 | 常州天合光能有限公司 | Electrode structure of solar cell plate |
| CN103606575A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Solar cell |
| CN103606570A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Solar cell |
| CN103606570B (en) * | 2013-11-21 | 2017-01-04 | 英利集团有限公司 | Solaode |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014090009A1 (en) | 2014-06-19 |
| JP2016503959A (en) | 2016-02-08 |
| CN102969368B (en) | 2015-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102983179B (en) | The vertical type electrode structure of solar battery sheet | |
| AU2015101917A4 (en) | High-efficiency N-type bifacial solar cell | |
| CN102969368B (en) | Electrode structure of solar cell piece | |
| CN109585600A (en) | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC | |
| CN211295118U (en) | Double-sided passivated crystalline silicon solar cell | |
| CN106098851A (en) | A kind of stepping method of crystal silicon solar energy battery | |
| CN106449845B (en) | One kind is based on Si/TiOxThe two-sided crystal-silicon solar cell of hetero-junctions | |
| CN108461554A (en) | Full back-contact heterojunction solar battery and preparation method thereof | |
| CN202957262U (en) | Electrode structure of solar cell | |
| CN203277404U (en) | Solar cell with hexagonal frame | |
| CN202662651U (en) | Crystalline silicon solar cell | |
| CN206271724U (en) | A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions | |
| CN214152915U (en) | Solar cell module | |
| CN202957263U (en) | Upper and lower electrode structure of solar cell | |
| CN204857750U (en) | Novel solar cell panel | |
| CN106449847A (en) | Solar battery with vertical PN heterojunction and manufacturing method thereof | |
| CN103646974B (en) | A kind of high power concentrator silicon solar cell and preparation method thereof | |
| CN207705207U (en) | Full back-contact heterojunction solar battery | |
| CN206878022U (en) | A kind of multi-crystal silicon film solar battery | |
| CN207624722U (en) | A kind of two-sided lamination modular construction of double diode cross version type | |
| CN208315580U (en) | A kind of crystal silicon solar energy battery of low electrode resistance | |
| CN204144275U (en) | A kind of solar battery sheet | |
| CN202159675U (en) | Electrode structure of solar cell | |
| CN202049960U (en) | Back surface field of solar cell | |
| CN202695455U (en) | Crystalline silicon solar cell module with protective layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wellington.Puel J Inventor after: Gao Jifan Inventor after: Sheng Jian Inventor before: Wellington.Puel J Inventor before: Sheng Jian |
|
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
| CP01 | Change in the name or title of a patent holder |