CN206878022U - A kind of multi-crystal silicon film solar battery - Google Patents

A kind of multi-crystal silicon film solar battery Download PDF

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Publication number
CN206878022U
CN206878022U CN201720506159.XU CN201720506159U CN206878022U CN 206878022 U CN206878022 U CN 206878022U CN 201720506159 U CN201720506159 U CN 201720506159U CN 206878022 U CN206878022 U CN 206878022U
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CN
China
Prior art keywords
layer
silicon
zno
solar battery
back side
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Expired - Fee Related
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CN201720506159.XU
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Chinese (zh)
Inventor
蒋建宝
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WUXI SAIJING SOLAR Co Ltd
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WUXI SAIJING SOLAR Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells

Abstract

The utility model discloses a kind of multi-crystal silicon film solar battery, silicon chip including being arranged on bottom, back side zno-based film layer, back side silicon nitride silicon passivation layer, p+/n+ types polysilicon seed layer, p/n type polysilicons absorbed layer, n+/p+ type a Si are sequentially provided with the silicon chip:H emission layers, TCO glass, front zno-based film layer, front side silicon nitride silicon passivation layer and multiple electrodes.The utility model technique is simple, and photoelectric transformation efficiency dramatically increases, and battery performance and stability are high, service life length.

Description

A kind of multi-crystal silicon film solar battery
Technical field
The utility model belongs to solar energy and utilizes technical field, particularly relates to a kind of multi-crystal silicon film solar electricity Pond.
Background technology
Energy shortage and environmental pollution are century two significant problems being faced of the mankind, turn into international community's economic development Bottleneck.Solar energy provides the preferred embodiments for solving the two problems as the regenerative resource of cleanliness without any pollution.At present, such as What is developed photoelectric transformation efficiency height, long lifespan, stable performance and the cheap solar cell of cost and has caused the whole world Extensive concern.Therefore, the needs based on era development, solar cell have wide development space.
Solar energy power generating market is vigorously developed, and between past 10 years, solar cell market is every year with 40% ratio Increase rapidly, wherein crystal-silicon solar cell occupies the market share of solar cell nearly 90%.In crystalline silicon solar cell modules The cost of silicon wafer accounts for the 50% of solar cell totle drilling cost, even if production technology constantly progresses greatly and developed!Further it is greatly reduced The preparation cost of crystal-silicon solar cell is also up to the limit;Therefore, filming or it is thin layer turn into reduce solar cell into This Main Means and development trend.Thin film solar cell(TFSC)Compared with crystal-silicon solar cell, there is dim light function admirable, original Material consumption significantly reduces the advantage such as low with cost.Also, TFSC can also be prepared on flexible substrates, there is good toughness, can roll over It is folded, rollable and can large area production the advantages that, future can be applied to the tables such as clothes, vehicle glass, aircraft and building Face.
But traditional thin film solar cell has the problem of energy conversion efficiency is relatively low, and preparation technology is complicated, thin Film thickness need further to compress.
The technique very simple of cell backside, aluminium paste is directly printed on the whole back side, battery back electrode is formed after sintering. Because the silicon chip surface of cell backside is not passivated, with the presence of a large amount of defect states, therefore electronics-hole is very high to recombination rate, The photoelectric transformation efficiency of battery is reduced, turns into one of important bottleneck for influenceing battery performance.Backside passivation layer is for increase electricity Pond efficiency, lifting battery performance have very important effect.Traditionally thermal oxide SiO2 can be passivated to silicon face, but heat Oxidation SiO2 is difficult to one side growth, and battery front side can be had an impact, and reduces device performance.SiNx films can be used for pair The passivation of silicon, but when this film is applied into passivating back, due to " ghost effect " be present(Parasitic Effect), The performance of solar cell can be reduced.Also someone's research carries out passivating back with Al2O3 films, but " parasitism effect still be present Should ".Moreover, SiO2, SiNx, Al2O3 are insulating materials, it is impossible to it is conductive, so as to which the series resistance of battery, limitation can be increased Its passivation.Thus, cell backside passivation layer technology is still an outstanding question so far.
Utility model content
The purpose of this utility model is to provide that a kind of conversion of energy is high, manufacturing process is simple, simple in construction, film thickness It is low, the multi-crystal silicon film solar battery of the light high conversion rate of battery.
A kind of multi-crystal silicon film solar battery described in the utility model, including the silicon chip of bottom is arranged on, described It is more that back side zno-based film layer, back side silicon nitride silicon passivation layer, p+/n+ types polysilicon seed layer, p-/n- types are sequentially provided with silicon chip Crystal silicon absorbed layer, n+/p+ types a-Si:H emission layers, TCO glass, front zno-based film layer, front side silicon nitride silicon passivation layer and more Individual electrode.
Further improve, the thickness of described back side zno-based film layer is 40-100 nanometers.
Further improve, the thickness of described front zno-based film layer is 80-200 nanometers.
Further improve, described TCO glass is by surface of plate glass by uniformly plating the electric conductive oxidation of layer of transparent Thing film forms.
The beneficial effects of the utility model are:
The utility model is different from traditional n/p type homojunction battery structures, using the basic structure list of n+/p-/p+ types Member, heavy doping technique has been used in launch site, and launch site heavy doping can form top layer shallow junction heavy doping, substantially increase the sun The energy conversion efficiency of energy battery, has saved cost;The battery also has the advantages that simple in construction, manufacturing process is simple.Containing TCO Polycrystalline silicon thin film solar cell structure the collection rate of photo-generated carrier can be greatly improved.
TCO glass Direct precipitations front ZnO base film layers, are transparent conductive film, can simultaneously be used as battery before electrode, Antireflection layer and passivation layer.First, positive ZnO base films layer as electrode before battery, substitutes existing metal grid mesh electrode, So that the front of whole battery turns into effective area of shining light, reach incident light utilization efficiency and maximize, while photo-generated carrier Transverse movement need not be made on p-n knots top layer again, its collection efficiency be greatly improved, before this scheme completely solves aperture plate metal The shortcomings that electrode, battery conversion efficiency can be significantly increased;Second, positive ZnO base films layer is as antireflective coating, and with aobvious The silicon face passivation of work and body passivation, so as to as antireflection layer and passivation layer, substitute SiNx films, its anti-reflection completely Penetrate performance and inactivating performance is superior to SiNx films, the short circuit current and open-circuit voltage of battery can be improved, lift battery performance;Its Three, antireflective coating SiNx and front electrode two-step process in current preparation flow are substituted using positive ZnO base films layer, can To reach the integration of antireflective coating and preceding electrode, product cost is significantly reduced.
The Direct precipitation back side zno-based film layer on silicon chip, passivation layer can be used as.First, zno-based film is blunt for the back side Change layer, can effectively eliminate the silicon face state and volume defect state of cell backside, good passivation effect, technique is simple, can be significantly Electronics-hole-recombination rate is reduced, increases battery conversion efficiency;Second, due to the introducing of ZnO base film backside passivation layers, Cell backside silicon face has clearly interface, can improve the internal reflection rate of light, forms double absorption, further increase electricity The photoelectric transformation efficiency in pond;Third, ZnO base film layers have high electrical conductivity, conduct electricity very well, the string of battery will not be increased Join resistance, be advantageous to lift battery performance.
Compared with existing crystal silicon solar energy battery, the crystal silicon solar energy battery technique is simple, and photoelectric transformation efficiency shows Increase is write, battery performance and stability are high, service life length.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
As shown in figure 1, a kind of multi-crystal silicon film solar battery described in the utility model, including it is arranged on the silicon of bottom Piece 1, back side zno-based film layer 2, back side silicon nitride silicon passivation layer 3, p+/n+ type multi-crystalline silicon seed crystals are sequentially provided with the silicon chip Layer 4, p-/n- type polysilicons absorbed layer 5, n+/p+ types a-Si:H emission layers 6, TCO glass 7, front zno-based film layer 8, front Silicon nitride passivation 9 and multiple electrodes 10.
The thickness of described back side zno-based film layer is 40-100 nanometers, and the thickness of described front zno-based film layer is 80-200 nanometers.
Described TCO glass 7 is formed by surface of plate glass by uniformly plating the conductive oxide film of layer of transparent.
The utility model uses the basic structural unit of n+/p-/p+ types, and heavy doping technique has been used in launch site, launches Area's heavy doping can form top layer shallow junction heavy doping, substantially increase the energy conversion efficiency of solar cell, saved cost; The battery also has the advantages that simple in construction, manufacturing process is simple.Using glass substrate, not only with cost is cheap, nonhazardous, Translucency is excellent, chemically stable and the advantages that easily reclaim, also with certain heat resistance and mechanical strength;Preparation technology letter It is single, bigger active-matrix display screen can be further developed into;Photoproduction can be greatly improved in polycrystalline silicon thin film solar cell structure containing TCO The collection rate of carrier.
The utility model provides a kind of multi-crystal silicon film solar battery, and described above is only of the present utility model preferred Implementation, it is noted that for those skilled in the art, before the utility model principle is not departed from Put, some improvement can also be made, these improvement also should be regarded as the scope of protection of the utility model.

Claims (4)

  1. A kind of 1. multi-crystal silicon film solar battery, it is characterised in that the silicon chip including being arranged on bottom, on the silicon chip according to Secondary back side zno-based film layer, back side silicon nitride silicon passivation layer, p+/n+ types polysilicon seed layer, the p-/n- types polysilicon of being provided with absorbs Layer, n+/p+ types a-Si:H emission layers, TCO glass, front zno-based film layer, front side silicon nitride silicon passivation layer and multiple electrodes.
  2. 2. multi-crystal silicon film solar battery according to claim 1, it is characterised in that described back side zno-based film The thickness of layer is 40-100 nanometers.
  3. 3. multi-crystal silicon film solar battery according to claim 1, it is characterised in that described front zno-based film The thickness of layer is 80-200 nanometers.
  4. 4. multi-crystal silicon film solar battery according to claim 1, it is characterised in that described TCO glass is by flat board Glass surface is formed by uniformly plating the conductive oxide film of layer of transparent.
CN201720506159.XU 2017-05-09 2017-05-09 A kind of multi-crystal silicon film solar battery Expired - Fee Related CN206878022U (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720506159.XU CN206878022U (en) 2017-05-09 2017-05-09 A kind of multi-crystal silicon film solar battery

Publications (1)

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CN206878022U true CN206878022U (en) 2018-01-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106910792A (en) * 2017-05-09 2017-06-30 无锡赛晶太阳能有限公司 A kind of multi-crystal silicon film solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106910792A (en) * 2017-05-09 2017-06-30 无锡赛晶太阳能有限公司 A kind of multi-crystal silicon film solar battery

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