CN206878022U - A kind of multi-crystal silicon film solar battery - Google Patents
A kind of multi-crystal silicon film solar battery Download PDFInfo
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- CN206878022U CN206878022U CN201720506159.XU CN201720506159U CN206878022U CN 206878022 U CN206878022 U CN 206878022U CN 201720506159 U CN201720506159 U CN 201720506159U CN 206878022 U CN206878022 U CN 206878022U
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- silicon
- zno
- solar battery
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 7
- 230000001131 transforming Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 31
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910004207 SiNx Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052904 quartz Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000011030 bottleneck Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000000415 inactivating Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003071 parasitic Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001172 regenerating Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Abstract
The utility model discloses a kind of multi-crystal silicon film solar battery, silicon chip including being arranged on bottom, back side zno-based film layer, back side silicon nitride silicon passivation layer, p+/n+ types polysilicon seed layer, p/n type polysilicons absorbed layer, n+/p+ type a Si are sequentially provided with the silicon chip：H emission layers, TCO glass, front zno-based film layer, front side silicon nitride silicon passivation layer and multiple electrodes.The utility model technique is simple, and photoelectric transformation efficiency dramatically increases, and battery performance and stability are high, service life length.
Description
Technical field
The utility model belongs to solar energy and utilizes technical field, particularly relates to a kind of multi-crystal silicon film solar electricity
Pond.
Background technology
Energy shortage and environmental pollution are century two significant problems being faced of the mankind, turn into international community's economic development
Bottleneck.Solar energy provides the preferred embodiments for solving the two problems as the regenerative resource of cleanliness without any pollution.At present, such as
What is developed photoelectric transformation efficiency height, long lifespan, stable performance and the cheap solar cell of cost and has caused the whole world
Extensive concern.Therefore, the needs based on era development, solar cell have wide development space.
Solar energy power generating market is vigorously developed, and between past 10 years, solar cell market is every year with 40% ratio
Increase rapidly, wherein crystal-silicon solar cell occupies the market share of solar cell nearly 90%.In crystalline silicon solar cell modules
The cost of silicon wafer accounts for the 50% of solar cell totle drilling cost, even if production technology constantly progresses greatly and developed!Further it is greatly reduced
The preparation cost of crystal-silicon solar cell is also up to the limit；Therefore, filming or it is thin layer turn into reduce solar cell into
This Main Means and development trend.Thin film solar cell（TFSC）Compared with crystal-silicon solar cell, there is dim light function admirable, original
Material consumption significantly reduces the advantage such as low with cost.Also, TFSC can also be prepared on flexible substrates, there is good toughness, can roll over
It is folded, rollable and can large area production the advantages that, future can be applied to the tables such as clothes, vehicle glass, aircraft and building
Face.
But traditional thin film solar cell has the problem of energy conversion efficiency is relatively low, and preparation technology is complicated, thin
Film thickness need further to compress.
The technique very simple of cell backside, aluminium paste is directly printed on the whole back side, battery back electrode is formed after sintering.
Because the silicon chip surface of cell backside is not passivated, with the presence of a large amount of defect states, therefore electronics-hole is very high to recombination rate,
The photoelectric transformation efficiency of battery is reduced, turns into one of important bottleneck for influenceing battery performance.Backside passivation layer is for increase electricity
Pond efficiency, lifting battery performance have very important effect.Traditionally thermal oxide SiO2 can be passivated to silicon face, but heat
Oxidation SiO2 is difficult to one side growth, and battery front side can be had an impact, and reduces device performance.SiNx films can be used for pair
The passivation of silicon, but when this film is applied into passivating back, due to " ghost effect " be present（Parasitic Effect）,
The performance of solar cell can be reduced.Also someone's research carries out passivating back with Al2O3 films, but " parasitism effect still be present
Should ".Moreover, SiO2, SiNx, Al2O3 are insulating materials, it is impossible to it is conductive, so as to which the series resistance of battery, limitation can be increased
Its passivation.Thus, cell backside passivation layer technology is still an outstanding question so far.
Utility model content
The purpose of this utility model is to provide that a kind of conversion of energy is high, manufacturing process is simple, simple in construction, film thickness
It is low, the multi-crystal silicon film solar battery of the light high conversion rate of battery.
A kind of multi-crystal silicon film solar battery described in the utility model, including the silicon chip of bottom is arranged on, described
It is more that back side zno-based film layer, back side silicon nitride silicon passivation layer, p+/n+ types polysilicon seed layer, p-/n- types are sequentially provided with silicon chip
Crystal silicon absorbed layer, n+/p+ types a-Si：H emission layers, TCO glass, front zno-based film layer, front side silicon nitride silicon passivation layer and more
Individual electrode.
Further improve, the thickness of described back side zno-based film layer is 40-100 nanometers.
Further improve, the thickness of described front zno-based film layer is 80-200 nanometers.
Further improve, described TCO glass is by surface of plate glass by uniformly plating the electric conductive oxidation of layer of transparent
Thing film forms.
The beneficial effects of the utility model are：
The utility model is different from traditional n/p type homojunction battery structures, using the basic structure list of n+/p-/p+ types
Member, heavy doping technique has been used in launch site, and launch site heavy doping can form top layer shallow junction heavy doping, substantially increase the sun
The energy conversion efficiency of energy battery, has saved cost；The battery also has the advantages that simple in construction, manufacturing process is simple.Containing TCO
Polycrystalline silicon thin film solar cell structure the collection rate of photo-generated carrier can be greatly improved.
TCO glass Direct precipitations front ZnO base film layers, are transparent conductive film, can simultaneously be used as battery before electrode,
Antireflection layer and passivation layer.First, positive ZnO base films layer as electrode before battery, substitutes existing metal grid mesh electrode,
So that the front of whole battery turns into effective area of shining light, reach incident light utilization efficiency and maximize, while photo-generated carrier
Transverse movement need not be made on p-n knots top layer again, its collection efficiency be greatly improved, before this scheme completely solves aperture plate metal
The shortcomings that electrode, battery conversion efficiency can be significantly increased；Second, positive ZnO base films layer is as antireflective coating, and with aobvious
The silicon face passivation of work and body passivation, so as to as antireflection layer and passivation layer, substitute SiNx films, its anti-reflection completely
Penetrate performance and inactivating performance is superior to SiNx films, the short circuit current and open-circuit voltage of battery can be improved, lift battery performance；Its
Three, antireflective coating SiNx and front electrode two-step process in current preparation flow are substituted using positive ZnO base films layer, can
To reach the integration of antireflective coating and preceding electrode, product cost is significantly reduced.
The Direct precipitation back side zno-based film layer on silicon chip, passivation layer can be used as.First, zno-based film is blunt for the back side
Change layer, can effectively eliminate the silicon face state and volume defect state of cell backside, good passivation effect, technique is simple, can be significantly
Electronics-hole-recombination rate is reduced, increases battery conversion efficiency；Second, due to the introducing of ZnO base film backside passivation layers,
Cell backside silicon face has clearly interface, can improve the internal reflection rate of light, forms double absorption, further increase electricity
The photoelectric transformation efficiency in pond；Third, ZnO base film layers have high electrical conductivity, conduct electricity very well, the string of battery will not be increased
Join resistance, be advantageous to lift battery performance.
Compared with existing crystal silicon solar energy battery, the crystal silicon solar energy battery technique is simple, and photoelectric transformation efficiency shows
Increase is write, battery performance and stability are high, service life length.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
As shown in figure 1, a kind of multi-crystal silicon film solar battery described in the utility model, including it is arranged on the silicon of bottom
Piece 1, back side zno-based film layer 2, back side silicon nitride silicon passivation layer 3, p+/n+ type multi-crystalline silicon seed crystals are sequentially provided with the silicon chip
Layer 4, p-/n- type polysilicons absorbed layer 5, n+/p+ types a-Si：H emission layers 6, TCO glass 7, front zno-based film layer 8, front
Silicon nitride passivation 9 and multiple electrodes 10.
The thickness of described back side zno-based film layer is 40-100 nanometers, and the thickness of described front zno-based film layer is
80-200 nanometers.
Described TCO glass 7 is formed by surface of plate glass by uniformly plating the conductive oxide film of layer of transparent.
The utility model uses the basic structural unit of n+/p-/p+ types, and heavy doping technique has been used in launch site, launches
Area's heavy doping can form top layer shallow junction heavy doping, substantially increase the energy conversion efficiency of solar cell, saved cost；
The battery also has the advantages that simple in construction, manufacturing process is simple.Using glass substrate, not only with cost is cheap, nonhazardous,
Translucency is excellent, chemically stable and the advantages that easily reclaim, also with certain heat resistance and mechanical strength；Preparation technology letter
It is single, bigger active-matrix display screen can be further developed into；Photoproduction can be greatly improved in polycrystalline silicon thin film solar cell structure containing TCO
The collection rate of carrier.
The utility model provides a kind of multi-crystal silicon film solar battery, and described above is only of the present utility model preferred
Implementation, it is noted that for those skilled in the art, before the utility model principle is not departed from
Put, some improvement can also be made, these improvement also should be regarded as the scope of protection of the utility model.
Claims (4)
- A kind of 1. multi-crystal silicon film solar battery, it is characterised in that the silicon chip including being arranged on bottom, on the silicon chip according to Secondary back side zno-based film layer, back side silicon nitride silicon passivation layer, p+/n+ types polysilicon seed layer, the p-/n- types polysilicon of being provided with absorbs Layer, n+/p+ types a-Si：H emission layers, TCO glass, front zno-based film layer, front side silicon nitride silicon passivation layer and multiple electrodes.
- 2. multi-crystal silicon film solar battery according to claim 1, it is characterised in that described back side zno-based film The thickness of layer is 40-100 nanometers.
- 3. multi-crystal silicon film solar battery according to claim 1, it is characterised in that described front zno-based film The thickness of layer is 80-200 nanometers.
- 4. multi-crystal silicon film solar battery according to claim 1, it is characterised in that described TCO glass is by flat board Glass surface is formed by uniformly plating the conductive oxide film of layer of transparent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720506159.XU CN206878022U (en) | 2017-05-09 | 2017-05-09 | A kind of multi-crystal silicon film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720506159.XU CN206878022U (en) | 2017-05-09 | 2017-05-09 | A kind of multi-crystal silicon film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206878022U true CN206878022U (en) | 2018-01-12 |
Family
ID=61339245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720506159.XU Expired - Fee Related CN206878022U (en) | 2017-05-09 | 2017-05-09 | A kind of multi-crystal silicon film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206878022U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910792A (en) * | 2017-05-09 | 2017-06-30 | 无锡赛晶太阳能有限公司 | A kind of multi-crystal silicon film solar battery |
-
2017
- 2017-05-09 CN CN201720506159.XU patent/CN206878022U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910792A (en) * | 2017-05-09 | 2017-06-30 | 无锡赛晶太阳能有限公司 | A kind of multi-crystal silicon film solar battery |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180112 Termination date: 20210509 |
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| CF01 | Termination of patent right due to non-payment of annual fee |