CN207409506U - A kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides - Google Patents
A kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides Download PDFInfo
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- CN207409506U CN207409506U CN201720831713.1U CN201720831713U CN207409506U CN 207409506 U CN207409506 U CN 207409506U CN 201720831713 U CN201720831713 U CN 201720831713U CN 207409506 U CN207409506 U CN 207409506U
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- Prior art keywords
- layer
- reverse side
- tco
- solar cell
- generating electricity
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- 230000005611 electricity Effects 0.000 title claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N Tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 5
- 230000000903 blocking Effects 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 231100000614 Poison Toxicity 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003000 nontoxic Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
A kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides, including：Front silver grating line electrode (1), front transparent conductive oxide tco layer (2), N-type non-crystalline silicon layer (3), the first intrinsic amorphous silicon layer (41), N-type or p type single crystal silicon piece (5), the second intrinsic amorphous silicon layer (42), P-type non-crystalline silicon layer (6), the first reverse side tco layer (81), silver-colored transparent conductive film (7) and the second reverse side tco layer (82) stacked gradually from top to bottom.Pass through the scheme of the utility model embodiment, reverse side tco layer and reverse side silver grating line electrode are substituted using the TCO Ag TCO multi-layer transparent electroconductive films of the first reverse side tco layer (81), silver-colored transparent conductive film (7) and the second reverse side tco layer (82) composition, reduce the dosage of low temperature silver paste, reduce cost, reverse side tco layer and reverse side silver grating line electrode are substituted using TCO Ag TCO multi-layer transparent electroconductive films, since the back side does not have blocking for grid line, so as to improve the back side light transmittance of HIT batteries and electric current collection ability.
Description
Technical field
Present document relates to but be not limited to silica-based solar cell field, the band intrinsic sheet hetero-junctions of espespecially a kind of generating electricity on two sides
Battery.
Background technology
Photovoltaic generation is a kind of generally acknowledged clean energy resource, and photovoltaic generation obtains vigorously supporting for national policy in recent years.Especially
It is in high performance solar batteries field, silica-based high-efficiency band intrinsic sheet hetero-junctions (HIT or HJT, Heterojunction with
Intrinsic Thin-layer) battery is because it is with photoelectric conversion efficiency is high, temperature coefficient is low, bad light, dim light are good etc.
Advantage is subject to great attention both domestic and external, and the HIT batteries of generating electricity on two sides can be higher by common photovoltaic cell in practical applications
The generated energy of (such as crystal silicon battery) 12%-30% is one of core technology of reduction degree electricity cost.
The HIT batteries of the generating electricity on two sides of mainstream at present use and are prefabricated with the monocrystalline silicon piece of pyramid matte as core, respectively
In the obverse and reverse deposition intrinsic amorphous silicon passivation layer of monocrystalline silicon piece, in front intrinsic amorphous silicon passivation layer deposition N-type amorphous
Silicon layer in reverse side intrinsic amorphous silicon passivation layer deposition P-type non-crystalline silicon layer, prepares front transparent afterwards in N-type non-crystalline silicon layer and leads
Electroxidation object (TCO, Transparent Conductive Oxide) layer, prepares reverse side tco layer, most on P-type non-crystalline silicon layer
Front silver grating line electrode is printed on positive TCO layers afterwards, reverse side silver grating line electrode is printed on reverse side tco layer.
In the HIT batteries of above-mentioned binocular face power generation, due to the indium tin oxide (ITO, Indium Tin Oxide) of tco layer
With the low temperature silver paste dosage of silver grating line electrode it is all larger (silver grating line electrode need by by the slurry of silver-colored simple substance pass through silk screen printing
Form, and the thickness of silver grating line electrode is generally micron order, silver paste is caused to consume more), cause HIT costs higher, and reverse side
Silver grating line electrode blocks the area of solar absorption so that the back side light transmittance and electric current collection ability of HIT batteries are poor.
Utility model content
The utility model embodiment proposes a kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides, can reduce ITO
With the dosage of low temperature silver paste, so as to improve the back side light transmittance of HIT batteries and electric current collection ability, and cost is reduced.
The utility model embodiment proposes a kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides, including：
Front silver grating line electrode 1, front transparent conductive oxide tco layer 2, the N-type non-crystalline silicon stacked gradually from top to bottom
The 3, first intrinsic amorphous silicon layer 41 of layer, N-type or p type single crystal silicon piece 5, the second intrinsic amorphous silicon layer 42, P-type non-crystalline silicon layer 6, first
Reverse side tco layer 81,7 and second reverse side tco layer 82 of silver-colored transparent conductive film.
Optionally, the front tco layer 2 is indium tin oxide ITO layer.
Optionally, the 81 or described second reverse side tco layer 82 of the first reverse side tco layer for it is following any one：
AZO layers of aluminium-doped zinc oxide, ITO layer, FTO layers of the tin oxide of fluorine doped.
Optionally, the thickness of the front tco layer 2 is 5~80 nanometers of nm.
Optionally, the thickness of the N-type non-crystalline silicon layer 3 is 1~20nm.
Optionally, the thickness of first intrinsic amorphous silicon layer 41 or second intrinsic amorphous silicon layer 42 is 1~20nm.
Optionally, the thickness of the N-type or p type single crystal silicon piece 5 is 70~300 microns μm.
Optionally, the thickness of the P-type non-crystalline silicon layer 6 is 1~20nm.
Optionally, the thickness of the 81 or described second reverse side tco layer 82 of the first reverse side tco layer is 1~80nm.
Optionally, the thickness of the silver-colored transparent conductive film 7 is 1~20nm.
Compared with correlation technique, the technical solution of the utility model embodiment includes：The front stacked gradually from top to bottom
Silver grating line electrode 1, front transparent conductive oxide tco layer 2, N-type non-crystalline silicon layer 3, the first intrinsic amorphous silicon layer 41, N-type or p-type
Monocrystalline silicon piece 5, the second intrinsic amorphous silicon layer 42, P-type non-crystalline silicon layer 6, the first reverse side tco layer 81, silver-colored transparent conductive film 7 and the
Two reverse side tco layers 82.By the scheme of the utility model embodiment, using the first reverse side tco layer 81, silver-colored transparent conductive film 7
Reverse side tco layer and reverse side silver grating line are substituted with the TCO-Ag-TCO multi-layer transparent electroconductive films of the second reverse side tco layer 82 composition
Electrode reduces the dosage of low temperature silver paste, reduces cost, is substituted using TCO-Ag-TCO multi-layer transparent electroconductive films anti-
Face tco layer and reverse side silver grating line electrode, since the back side does not have blocking for grid line, so as to improve the back side light transmittance of HIT batteries
With electric current collection ability.
Optionally, the first reverse side tco layer 81 or the second reverse side tco layer are AZO layers, since AZO layers of raw material are easy to get, cost
Low, nontoxic, electric conductivity is stablized, and reduces further the cost of HIT batteries.
Description of the drawings
The attached drawing in the utility model embodiment is illustrated below, the attached drawing in embodiment is for new to this practicality
Type is further understood, and for explaining the utility model together with specification, is not formed to scope of protection of the utility model
Limitation.
Fig. 1 is the structure composition schematic diagram with intrinsic sheet battery of the utility model generating electricity on two sides.
Specific embodiment
For the ease of the understanding of those skilled in the art, the utility model will be further described below in conjunction with the accompanying drawings,
It can not be used for limiting the scope of protection of the utility model.It should be noted that in the case where there is no conflict, the reality in the application
The various modes applied in example and embodiment can be mutually combined.
Referring to Fig. 1, the utility model proposes a kind of HIT batteries of generating electricity on two sides, including：
The front silver grating line electrode 1 that stacks gradually from top to bottom, front tco layer 2, N-type non-crystalline silicon layer 3, first are intrinsic non-
Crystal silicon layer 41, N-type or p type single crystal silicon piece 5, the second intrinsic amorphous silicon layer 42, P types amorphous silicon layer 6, the first reverse side tco layer 81,
Silver-colored 7 and second reverse side tco layer 82 of transparent conductive film.
By the scheme of the utility model embodiment, using the first reverse side tco layer 81, silver-colored transparent conductive film 7 and second
The TCO-Ag-TCO multi-layer transparent electroconductive films that reverse side tco layer 82 forms substitute reverse side tco layer and reverse side silver grating line electrode, subtract
The dosage of low temperature silver paste is lacked, has reduced cost, reverse side tco layer is substituted using TCO-Ag-TCO multi-layer transparent electroconductive films
With reverse side silver grating line electrode, since the back side does not have blocking for grid line, received so as to improve the back side light transmittance of HIT batteries and electric current
Collection ability.
Optionally, front tco layer 2 is indium tin oxide ITO layer.
Optionally, the first reverse side tco layer 81 or the second reverse side tco layer 82 for it is following any one：
Aluminium-doped zinc oxide (AZO, Aluminum doped Zinc Oxid) layer, ITO layer, fluorine doped tin oxide (FTO,
Fluorine-doped Tin Oxide) layer.
When first reverse side tco layer 81 or the second reverse side tco layer are AZO layers, since AZO layers of raw material are easy to get, at low cost, nothing
Poison, electric conductivity are stablized, and reduce further the cost of HIT batteries.
Optionally, the thickness of front tco layer 2 is 5~80 nanometers (nm).
Optionally, the thickness of N-type non-crystalline silicon layer 3 is 1~20nm.
Optionally, the thickness of the first intrinsic amorphous silicon layer 41 or the second intrinsic amorphous silicon layer 42 is 1~20nm.
Optionally, the thickness of N-type or p type single crystal silicon piece 5 is 70~300 microns (μm).
Optionally, the thickness of P-type non-crystalline silicon layer 6 is 1~20nm.
Optionally, the thickness of AZO layers 81 or AZO layers 82 is 1~80nm.
Optionally, the thickness of silver-colored transparent conductive film 7 is 1~20nm.
That is, the thickness of silver-colored transparent conductive film 7 is nanoscale, the dosage of silver paste is greatly reduced, is reduced into
This.
Silver-colored transparent conductive film 7 plays the role of conduction, and light transmission designs silver-colored transparent conductive film 7 in the first reverse side TCO
Among 81 and second reverse side tco layer 82 of layer, Ag layers of oxidation can be prevented.
It should be noted that embodiment described above be for only for ease of it will be understood by those skilled in the art that, and
Limitation the scope of protection of the utility model is not used in, on the premise of the utility model for not departing from the utility model is conceived, ability
Field technique personnel to the utility model made it is any it is obvious replacement and improvement etc. in the protection of the utility model
Within the scope of.
Claims (10)
1. a kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides, which is characterized in that including：
It is the front silver grating line electrode (1) that stacks gradually from top to bottom, front tco layer (2), N-type non-crystalline silicon layer (3), first intrinsic
Amorphous silicon layer (41), N-type or p type single crystal silicon piece (5), the second intrinsic amorphous silicon layer (42), P-type non-crystalline silicon layer (6), the first reverse side
Tco layer (81), silver-colored transparent conductive film (7) and the second reverse side tco layer (82).
2. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that the front
Tco layer (2) is ITO layer.
3. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that described first is anti-
Face tco layer (81) or the second reverse side tco layer (82) for it is following any one：
AZO layers of aluminium-doped zinc oxide, ITO layer, FTO layers of the tin oxide of fluorine doped.
4. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that the front
The thickness of tco layer (2) is 5~80 nanometers.
5. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that the N-type is non-
The thickness of crystal silicon layer (3) is 1~20nm.
6. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that the first
The thickness for levying amorphous silicon layer (41) or second intrinsic amorphous silicon layer (42) is 1~20nm.
7. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that the N-type or P
The thickness of type monocrystalline silicon piece (5) is 70~300 microns.
8. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that the p-type is non-
The thickness of crystal silicon layer (6) is 1~20nm.
9. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that described first is anti-
Face tco layer (81) or the thickness of the second reverse side tco layer (82) are 1~80nm.
10. the band intrinsic sheet hetero-junction solar cell of generating electricity on two sides according to claim 1, which is characterized in that the silver is thoroughly
The thickness of bright conductive film (7) is 1~20nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720831713.1U CN207409506U (en) | 2017-07-07 | 2017-07-07 | A kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides |
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| CN201720831713.1U CN207409506U (en) | 2017-07-07 | 2017-07-07 | A kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511535A (en) * | 2018-06-04 | 2018-09-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof |
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2017
- 2017-07-07 CN CN201720831713.1U patent/CN207409506U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511535A (en) * | 2018-06-04 | 2018-09-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof |
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| TR01 | Transfer of patent right |
Effective date of registration: 20210104 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 100176 7th Floor 805, 66 Building, No. 2 Jingyuan North Street, Daxing Economic and Technological Development Zone, Beijing Patentee before: Juntai innovation (Beijing) Technology Co.,Ltd. |
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