CN100399584C - Tin dioxide thin film and silicon heterojunction solar battery - Google Patents
Tin dioxide thin film and silicon heterojunction solar battery Download PDFInfo
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- CN100399584C CN100399584C CNB2005101110175A CN200510111017A CN100399584C CN 100399584 C CN100399584 C CN 100399584C CN B2005101110175 A CNB2005101110175 A CN B2005101110175A CN 200510111017 A CN200510111017 A CN 200510111017A CN 100399584 C CN100399584 C CN 100399584C
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- tin ash
- amorphous silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention relates to a tin dioxide film and a silicon heterojunction solar battery in the technical field of semiconductors, which comprises a grating electrode of the light-facing surface of the battery, a fluorine-doped Tin dioxide layer, a Silicon dioxide layer, a n type silicon fundamental base, intrinsic amorphous silicon film, phosphor doping amorphous silicon film, and an aluminium back electrode. The grating electrode of the light-facing surface of the battery is positioned on the tin dioxide layer, the silicon dioxide layer is clamped between the fluorine-doped tin dioxide layer and the front side of the n type silicon fundamental base, and the intrinsic amorphous silicon film, phosphor doping amorphous silicon film and the aluminium back electrode are orderly arranged on the back surface of the n type silicon fundamental base. The present invention reduces resistors connected in series of the film, and the intrinsic amorphous silicon film of the back side, the phosphor doping amorphous silicon film and the aluminium back electrode on the back surface and a silicon chip form a high-low junction; thereby, the electric-output performance of the battery can be improved, and the present invention has the advantages of simple technique and low industrial production cost. When the present invention is under the standard light intensity of which the value is AM1.5 and 100 mW/cm <2>, the efficiency of the solar battery can be more than 13 percent.
Description
Technical field
What the present invention relates to is a kind of battery of technical field of semiconductors, particularly a kind of tin ash/silicon heterojunction solar battery.
Background technology
Since the silicon solar cell of first practicality is born in U.S.'s Bell Laboratory, crystalline silicon (comprising monocrystalline silicon and polysilicon) solar cell is through reaching the development of over half a century, its shortcoming is also in the development saliency, first, material unaccounted-for (MUF) is big, available silicon thickness only be silicon chip thick 1%, silicon materials have also increased the weight of the weight of battery; The second, energy consumption is big, and the processing of silicon ingot preparation and body silion cell all will be carried out under the high temperature near 1000 degree, makes the cost of crystal-silicon solar cell still occupy height.People are inquiring into the technology path of film always, because thin film solar cell can all have remarkable advantages than crystal-silicon solar cell on the utilization of material and energy consumption, in order to reach the target of thin film solar cell, people at first consider and adopt the technology of heterojunction to cut down the consumption of energy earlier, be substrate still promptly with silicon chip, high temperature is prepared the technology of homojunction, replace, as the HIT solar cell of Sanyo electrical equipment Co., Ltd. exploitation of Japan with the heterojunction technology of low temperature; Not only the crystalline silicon diffused junction solar cell than traditional is simple to adopt metal-oxide film and silicon chip to constitute the production technology of solar cell of heterojunction, and also used than HIT solar cell equipment is simple on the equipment, and the manufacturing cost expense is lower.
Find that through literature search the patent U.S.pat.No.4.366.335 of the U.S. has introduced the solar cell that adopts indium oxide film and silicon to constitute heterojunction to prior art.But this solar cell has following shortcoming: the first, and indium belongs to noble metal, thus the indium oxide film cost height of Gou Chenging; The second, because the back electrode problem of passivation of battery does not solve well, efficient is not high.
Summary of the invention:
The objective of the invention is to overcome deficiency of the prior art, a kind of tin ash/silicon heterojunction solar battery is provided, make it on n type silicon substrate, deposit SnO
2: the F film, make tin ash and silicon heterojunction solar battery, with respect to indium oxide film and silicon heterojunction solar battery, because it does not have indium, cost greatly reduces; Secondly, by to semiconductor oxide S nO
2Mix, improved the series resistance of battery, make its electricity conversion surpass 13%.
The present invention is achieved by the following technical solutions.The present invention includes: battery side to light gate line electrode, the tin ash layer of mixing fluorine, silicon dioxide layer, n type silicon base, intrinsic amorphous silicon film, phosphorus doping amorphous silicon membrane and aluminum back electrode.Battery side to light gate line electrode is arranged on the side to light of battery, battery side to light gate line electrode is being mixed on the tin ash layer of fluorine, mix between the front of the tin ash layer of fluorine and n type silicon base and pressed from both sides the layer of silicon dioxide layer, the back side of n type silicon base is deposition intrinsic amorphous silicon membrane and phosphorus doping amorphous silicon membrane and aluminum back electrode successively.
Described battery side to light gate line electrode is the front lighting current collection electrode.
The described tin ash layer of mixing fluorine, be thickness greatly about the fluorine-doped tin dioxide film of 70nm～90nm, play the effect of optics antireflection film again so this film is the part of heterojunction.
Described silicon dioxide layer, thickness range is 1～3nm, plays the tin ash layer of mixing fluorine in the front and the passivation between the silicon.
Described intrinsic amorphous silicon film, phosphorus doping amorphous silicon membrane and aluminum back electrode constitute the back side of battery, intrinsic amorphous silicon film and phosphorus doping amorphous silicon membrane and n type silicon base constitute height and tie back side resilient coating, have not only increased the open circuit voltage of battery but also help back side aluminium electrode formation ohmic contact.
Described n type silicon base can be a monocrystal silicon substrate, also can be the polysilicon substrate, and thickness is between 240～350nm, and resistivity is 0.5～10 Ω/.
The thickness range that described silicon dioxide layer is suitable for is 1～3nm, can heat obtain on electric furnace, and oxidation under field conditions (factors) also can meet the demands.
Described intrinsic amorphous silicon film, thickness are 2nm～5nm.
Described phosphorus doping amorphous silicon membrane, thickness are 10～30nm.
As antireflective film, the thickness of film and refractive index all have strict requirement.Normally: the thickness of film is the integral multiple of λ/4.(λ is a light wavelength).The refractive index of antireflective film should be the square root of refractive index of substrate.The fluorine-doped tin dioxide film satisfies these requirements as antireflective film.The substrate that the present invention uses and the refractive index of fluorine-doped tin dioxide film are respectively 4 and 2.Simultaneously, the thickness of film reaches interference color for blue greatly about 70nm～90nm.
Fluorine-doped tin dioxide film rectangular resistance of the present invention has dropped to 90 Ω/, and not atomizing, and the film visible light transmissivity of acquisition can reach more than 85%.Common SnO
2The electric conductivity of film is relatively poor, if adopt SnO
2Film and silicon constitute heterojunction solar cell, can find that its series resistance will be very big, cause the delivery efficiency of solar cell to reduce, fluorine-doped tin dioxide film itself reaches the heterojunction that constitutes with silicon and has the ability of very strong anti-environmental corrosion, and the stability of device also improves greatly.
The front of silicon solar cell is for being subjected to plane of illumination, and positive electrode should be drawn photogenerated current, is unlikely to block too many sunlight again so that has reduced to be subjected to light-struck area, and the grid line structure has been adopted in the front.Facts have proved that it has not only optimized surface coverage, also reduced the series resistance of battery.
The tin ash layer that the present invention mixes fluorine plays optics antireflective effect and constitutes heterojunction with silicon again simultaneously, and the tin ash layer of mixing fluorine is to adopt the ultrasonic atomization process deposits, adopt fluorine-ion-doped tin dioxide thin film, has reduced the series resistance of film; The intrinsic amorphous silicon film at the back side and phosphorus doping amorphous silicon membrane, be to adopt the technology of hot wire chemical vapor deposition or plasma-enhanced chemical vapor deposition to prepare, they and n type silicon base constitute the height knot, have improved the electric output performance of battery, technology is simple, and the industrialization cost is low.At AM1.5,100mW/cm
2Under the etalon optical power, the efficient of solar cell of the present invention reaches more than 13%.
Description of drawings
Fig. 1 is a structural representation of the present invention
Embodiment
As shown in Figure 1, the present invention includes: battery side to light gate line electrode 1, the tin ash layer 2 of mixing fluorine, silicon dioxide layer 3, n type silicon base 4, intrinsic amorphous silicon film 5 and phosphorus doping amorphous silicon membrane 6 and aluminum back electrode 7.Battery side to light gate line electrode 1 is arranged on the side to light of battery, battery side to light gate line electrode 1 is being mixed on the tin ash layer 2 of fluorine, mix between the front of the tin ash layer 2 of fluorine and n type silicon base 4 and pressed from both sides layer of silicon dioxide layer 3, the back side of n type silicon base 4 is deposition intrinsic amorphous silicon membrane 5 and phosphorus doping amorphous silicon membrane 6 and aluminum back electrode 7 successively.
Described battery side to light gate line electrode 1 is the front lighting current collection electrode.
The described tin ash layer 2 of mixing fluorine, be thickness greatly about the fluorine-doped tin dioxide film of 70nm～90nm, refractive index is 2, this film is the effect that the part of heterojunction plays the optics antireflection film again.
Described silicon dioxide layer 3, thickness range is 1～3nm, plays the tin ash layer of mixing fluorine in the front and the passivation between the silicon.
Described n type silicon base 4 is monocrystal silicon substrate, perhaps polysilicon substrate, and thickness is between 240～350nm, and resistivity is 0.5～10 Ω/.
Described n type silicon base 4, its refractive index is 4.
Described intrinsic amorphous silicon film 5 and phosphorus doping amorphous silicon membrane 6 constitute height with n type silicon base 4 and tie back side resilient coating, have not only increased the open circuit voltage of battery but also help back side aluminium electrode 7 formation ohmic contact.
Described intrinsic amorphous silicon film 5, thickness are 2nm～to 5nm.
Described phosphorus doping amorphous silicon membrane 6, thickness are 10～30nm.
Solar cell of the present invention constitutes heterojunction by the tin ash layer 2 of mixing fluorine with n type silicon base 4, the internal electric field that separates photo-generated carrier is provided, at the back side of n type silicon base 4 since 4 and back side aluminium electrode 7 between increased intrinsic amorphous silicon film 5 and phosphorus doping amorphous silicon membrane 6, both silicon back of the body surface was formed passivation, constitute back of the body surface field with n type silicon base 4 again, improved the open circuit voltage of battery, also can make the ohmic contact of 7 formation of back side aluminium electrode and silicon.Positive doping stannic oxide layer 2 has reduced the series resistance of battery, and the design at the back side all helps electrical power output efficiently.
Example
It is the pulling of crystals silicon chip of 1 Ω cm that n type silicon base 4 is selected n type, resistivity for use, and silicon chip is (100) orientation, and single-sided polishing, thickness are 250 μ m, and gained solar cell effective area is 2 * 2cm
2, mix the thickness 76nm of the tin ash layer 2 of fluorine, the thickness of intrinsic amorphous silicon film 5 and phosphorus doping amorphous silicon membrane 6 is respectively 3nm and 30nm, the thickness of silicon dioxide layer 3 is 2nm.The The performance test results of battery is: AM1.5,100mW/cm
2Under the irradiation of etalon optical power, the efficient of the heterojunction solar cell of this process preparation reaches 14.2%, and open circuit voltage reaches 590mV, and short circuit current reaches 36mA, and fill factor, curve factor reaches 67%.
Claims (8)
1. tin ash/silicon heterojunction solar battery, comprise: battery side to light gate line electrode (1), mix the tin ash layer (2) of fluorine, silicon dioxide layer (3), n type silicon base (4), intrinsic amorphous silicon film (5) and phosphorus doping amorphous silicon membrane (6) and aluminum back electrode (7), it is characterized in that, battery side to light gate line electrode (1) is being mixed on the tin ash layer (2) of fluorine, mix between the front of the tin ash layer (2) of fluorine and n type silicon base (4) and pressed from both sides layer of silicon dioxide layer (3), the back side of n type silicon base (4) is deposition intrinsic amorphous silicon membrane (5) successively, phosphorus doping amorphous silicon membrane (6) and aluminum back electrode (7).
2. tin ash/silicon heterojunction solar battery according to claim 1 is characterized in that, the described tin ash layer (2) of mixing fluorine is the fluorine-doped tin dioxide film of thickness at 70nm～90nm.
3. according to claim 1 or 2 described tin ash/silicon heterojunction solar batteries, it is characterized in that described refractive index of mixing the tin ash layer (2) of fluorine is 2.
4. tin ash/silicon heterojunction solar battery according to claim 1 is characterized in that, described silicon dioxide layer (3), thickness range are 1～3nm.
5. tin ash/silicon heterojunction solar battery according to claim 1 is characterized in that, described n type silicon base (4) is monocrystal silicon substrate, perhaps polysilicon substrate, and thickness is between 240～350nm, and resistivity is 0.5～10 Ω/.
6. according to claim 1 or 5 described tin ash/silicon heterojunction solar batteries, it is characterized in that the refractive index of described silicon base (4) is 4.
7. tin ash/silicon heterojunction solar battery according to claim 1 is characterized in that, described intrinsic amorphous silicon film (5), thickness are 2nm～5nm.
8. tin ash/silicon heterojunction solar battery according to claim 1 is characterized in that, described phosphorus doping amorphous silicon membrane (6), thickness are 10～30nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005101110175A CN100399584C (en) | 2005-12-01 | 2005-12-01 | Tin dioxide thin film and silicon heterojunction solar battery |
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|---|---|---|---|
| CNB2005101110175A CN100399584C (en) | 2005-12-01 | 2005-12-01 | Tin dioxide thin film and silicon heterojunction solar battery |
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| CN1812136A CN1812136A (en) | 2006-08-02 |
| CN100399584C true CN100399584C (en) | 2008-07-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100433371C (en) * | 2007-01-26 | 2008-11-12 | 哈尔滨工业大学 | An a-Si:H solar battery with the boron mixing non-crystal diamond film as the window layer and its making method |
| CN102136517A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Crystalline silicon heterojunction lamination solar cell and manufacture method thereof |
| CN105932075B (en) * | 2016-05-12 | 2017-07-11 | 南昌大学 | One kind back of the body crystalline silicon heterojunction solar cell and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685878A (en) * | 1979-12-17 | 1981-07-13 | Fuji Photo Film Co Ltd | Manufacture of photoelectric conversion element |
| US4366335A (en) * | 1981-01-05 | 1982-12-28 | Exxon Research And Engineering Co. | Indium oxide/n-silicon heterojunction solar cells |
| JP2004172167A (en) * | 2002-11-15 | 2004-06-17 | Zenji Hiroi | Solar cell composed of transition metal oxide |
| US20050151131A1 (en) * | 2002-06-11 | 2005-07-14 | Wager John F.Iii | Polycrystalline thin-film solar cells |
-
2005
- 2005-12-01 CN CNB2005101110175A patent/CN100399584C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685878A (en) * | 1979-12-17 | 1981-07-13 | Fuji Photo Film Co Ltd | Manufacture of photoelectric conversion element |
| US4366335A (en) * | 1981-01-05 | 1982-12-28 | Exxon Research And Engineering Co. | Indium oxide/n-silicon heterojunction solar cells |
| US20050151131A1 (en) * | 2002-06-11 | 2005-07-14 | Wager John F.Iii | Polycrystalline thin-film solar cells |
| JP2004172167A (en) * | 2002-11-15 | 2004-06-17 | Zenji Hiroi | Solar cell composed of transition metal oxide |
Non-Patent Citations (2)
| Title |
|---|
| 一种喷涂SnO2减反射薄膜的新工艺及材料研究. 周之斌等.太阳能学报，第21卷第1期. 2000 |
| 一种喷涂SnO2减反射薄膜的新工艺及材料研究. 周之斌等.太阳能学报，第21卷第1期. 2000 * |
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