CN206460967U - A kind of cadmium telluride diaphragm solar battery - Google Patents

A kind of cadmium telluride diaphragm solar battery Download PDF

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Publication number
CN206460967U
CN206460967U CN201621460223.7U CN201621460223U CN206460967U CN 206460967 U CN206460967 U CN 206460967U CN 201621460223 U CN201621460223 U CN 201621460223U CN 206460967 U CN206460967 U CN 206460967U
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Prior art keywords
layer
solar battery
cadmium telluride
light absorbing
diaphragm solar
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CN201621460223.7U
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马立云
彭寿
潘锦功
殷新建
蒋猛
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CNBM (CHENGDU) OPTOELECTRONIC MATERIAL Co Ltd
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CNBM (CHENGDU) OPTOELECTRONIC MATERIAL Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

Laminate film is provided with a kind of cadmium telluride diaphragm solar battery of disclosure, including substrate, the substrate, the laminate film includes nesa coating, Window layer, light absorbing layer, back contact, back reflection layer and dorsum electrode layer successively from lower to upper;The Window layer is cadmium sulphide membrane layer, and the light absorbing layer is Cadimium telluride thin film layer, and the back contact is cuprous thiocyanate membrane layer, and the back reflection layer is Ag films layer.The battery reduces the thickness of light absorbing layer on the basis of the absorption efficiency of sunshine is ensured, reduces the consumption of Te raw materials, reduces production cost, and batch growth feasibility is high.

Description

A kind of cadmium telluride diaphragm solar battery
Technical field
The application is related to field technical field of solar batteries, and in particular to a kind of cadmium telluride diaphragm solar battery.
Background technology
Under the promotion of the requirements such as society, environment, the energy and sustainable development, the popularization and application of new energy have turned into complete Ball is known together.And solar energy occupies critical role as topmost regenerative resource in new energy in future development.Film is too Positive electricity pond mainly includes the polytypes such as non-crystalline silicon, cadmium telluride, CIGS and dye sensitization, and it is few due to consumable material, With the very big reduction cost space known together, by the increasing concern of countries in the world.
Wherein, cadmium telluride (CdTe) thin film solar cell, its main structure body by light absorbing layer CdTe layer and Window layer CdS Layer is formed, extinction efficiency factor>105cm-1, can absorb more than 90% light, conversion efficiency is more than 8%, to be of new generation high Effect, low cost, can large-scale industrial production solar cell.And cadmium telluride (CdTe) thin film solar cell conventional at present CdTe layer thickness is 3 microns to 8 microns, and element T e is rare element, and material is rare and expensive, causes cadmium telluride (CdTe) Thin film solar cell production cost is high, as the big factor for limiting its development.
Utility model content
In view of this, this application provides a kind of cadmium telluride diaphragm solar battery, the battery is ensureing sunshine On the basis of absorption efficiency, reduce the thickness of light absorbing layer, reduce the consumption of Te raw materials, reduce production cost, batch growth can Row is high.
To solve above technical problem, the technical scheme that the application is provided is a kind of cadmium telluride diaphragm solar battery, bag Include and laminate film is provided with substrate, the substrate, the laminate film includes nesa coating, window successively from lower to upper Layer, light absorbing layer, back contact, back reflection layer and dorsum electrode layer;The Window layer is cadmium sulphide membrane layer, the light absorbing layer For Cadimium telluride thin film layer, the back contact is cuprous thiocyanate membrane layer, and the back reflection layer is Ag films layer.
It is preferred that, the substrate is glass or high molecular polymer.
It is preferred that, the high molecular polymer is polyimides.
It is preferred that, the nesa coating is TCO thin film.
It is preferred that, the dorsum electrode layer includes nickel film layer and chrome thin film layer.
It is preferred that, the window layer thickness is 10nm~200nm.
It is preferred that, the light absorbing layer thickness is 50nm~2000nm.
It is preferred that, the light absorbing layer thickness is 500nm~2000nm.
It is preferred that, the light absorbing layer thickness is 500nm.
It is preferred that, the back contact thickness is 5nm~100nm.
It is preferred that, the back contact thickness is 20nm.
It is preferred that, the back reflection layer thickness is 30nm~800nm.
It is preferred that, the back reflection layer thickness is 80nm~800nm.
It is preferred that, the back reflection layer thickness is 80nm
It is preferred that, the laminate film also includes encapsulating material layer and backboard, the encapsulating material layer and the backboard according to It is secondary to be arranged on the dorsum electrode layer.
It is preferred that, the backboard is glass.
In technical scheme, a kind of cadmium telluride diaphragm solar battery, including substrate is provided with the substrate Laminate film, it is anti-that the laminate film includes nesa coating, Window layer, light absorbing layer, back contact, the back of the body successively from lower to upper It is packaged after penetrating layer and back electrode;The Window layer is cadmium sulphide membrane layer, and the light absorbing layer is Cadimium telluride thin film layer;Institute It is cuprous thiocyanate membrane layer to state back contact, and cuprous thiocyanate membrane layer easily realizes Ohmic contact with Cadimium telluride thin film layer, Nesa coating has anti-reflection effect, and more light can be made to enter inside battery;, can plus the back reflection layer for Ag films layer Make the light of arrival battery bottom fully be reflected back inside battery to be absorbed again, lift the capturing efficiency to incident sunshine, Improve the light utilization efficiency of battery;Back electrode includes nickel film layer and chrome thin film layer, is sandwich construction, with good electric conductivity; Therefore, the cadmium telluride diaphragm solar battery that the application is provided can be such that sunshine is effectively reflected, in light absorbing layer Extraordinary quantum efficiency can be realized on path, on the basis of the absorption efficiency of sunshine is ensured, realizes and reduces light absorbs The thickness of layer, reduces the consumption of Te raw materials, reduces production cost.
Compared with prior art, its detailed description is as follows by the application:
The application sets Ag films layer, has the integration more than or equal to 95% in 600nm to 1200nm wave-length coverage Total reflectivity, effectively lifts the capturing efficiency to incident sunshine, and then improves the absorption efficiency to sunshine, and obtains efficient Rate cadmium telluride diaphragm solar battery, reduces production cost;Meanwhile, Ag films thickness degree is 30nm~800nm, also effectively control Cost;
Back contact is made using cheap cuprous thiocyanate membrane layer, cuprous thiocyanate membrane layer holds with Cadimium telluride thin film layer Ohmic contact is easily realized, the absorption efficiency of sunshine is improved;
The application can realize extraordinary quantum efficiency on the path of light absorbing layer, ensure the absorption effect of sunshine On the basis of rate, reduce the thickness of light absorbing layer, reduce the consumption of Te raw materials, reduction production cost batch growth feasibility is high.
Brief description of the drawings
Fig. 1 is cadmium telluride thin-film battery structural representation described herein.
Embodiment
In order that those skilled in the art more fully understands the technical scheme of the application, implement below in conjunction with the application Accompanying drawing in example, clear, complete description is carried out to the technical scheme in the embodiment of the present application, it is clear that described embodiment Only some embodiments of the present application, rather than whole embodiments.Based on embodiments herein, ordinary skill The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of the application protection.
Embodiment 1
It is thin that lamination is provided with a kind of cadmium telluride diaphragm solar battery as shown in Figure 1, including substrate 1, the substrate 1 Film, the laminate film includes nesa coating 2, Window layer 3, light absorbing layer 4, back contact 5, back reflection successively from lower to upper Layer 6, dorsum electrode layer 7, encapsulating material layer 8 and backboard 9;Wherein, the substrate 1 is glass or high molecular polymer, the high score Sub- polymer is polyimides;The nesa coating 2 is TCO thin film;The Window layer 3 is cadmium sulphide membrane layer, and thickness is 10nm~200nm;The light absorbing layer 4 is Cadimium telluride thin film layer, and thickness is 500nm;The back contact 5 is cuprous sulfocyanide Film layer, thickness is 20nm;The back reflection layer 6 is Ag films layer, and thickness is 80nm;The dorsum electrode layer 7 includes nickel film Layer 10 and chrome thin film layer 11, the backboard 9 are glass.
Embodiment 2
Light absorbing layer thickness influences on the battery performance of cadmium telluride diaphragm solar battery sample
1st, laboratory sample:Cadmium telluride diaphragm solar battery sample A, B, C, D (light absorbing layer thickness be respectively 50nm, 300nm、500nm、2000nm);
2nd, experimental method:Performance test is carried out using method described in GB/T 6495.1-1996;
3rd, experimental result:It is shown in Table 1.
The light absorbing layer thickness of table 1 influences result to the battery performance of cadmium telluride diaphragm solar battery sample
Battery sample Eff (%) Voc(V) Jsc(mA/cm2) FF (%)
Sample A 4.35 0.623 15.2 45.936
Sample B 7.64 0.795 18.7 51.352
Sample C 12.85 0.824 22.4 69.619
Sample D 12.93 0.822 22.8 68.991
Wherein, Eff is efficiency for charge-discharge, and Voc is open-circuit voltage, and Jsc is short circuit current flow, and FF is fill factor, curve factor.
When absorber thickness is 500nm~2000nm as can be seen from the above data, battery performance is preferred side preferably Case, is most preferably scheme when absorber thickness is 500nm with reference to different-thickness consumption of raw materials amount.
Embodiment 3
Back contact thickness influences on the battery performance of cadmium telluride diaphragm solar battery sample
1st, laboratory sample:Cadmium telluride diaphragm solar battery sample a, b, c (back contact thickness be respectively 5nm, 20nm, 100nm);
2nd, experimental method:Performance test is carried out using method described in GB/T 6495.1-1996;
3rd, experimental result:It is shown in Table 2.
The back contact thickness of table 2 influences result to the battery performance of cadmium telluride diaphragm solar battery sample
Battery sample Eff (%) Voc(V) Jsc(mA/cm2) FF (%)
Sample a 9.26 0.788 21.3 0.5517
Sample b 12.85 0.824 22.4 69.619
Sample c 7.87 0.791 20.1 49.500
Wherein, Eff is efficiency for charge-discharge, and Voc is open-circuit voltage, and Jsc is short circuit current flow, and FF is fill factor, curve factor.
Preferably, i.e. the thickness of back contact is in 20nm, its battery for sample b battery performances as can be seen from the above data Performance is most preferably scheme more preferably.
Embodiment 4
Back reflection layer thickness influences on the battery performance of cadmium telluride diaphragm solar battery sample
1st, laboratory sample:Cadmium telluride diaphragm solar battery sample d, e, f (back reflection layer thickness be respectively 30nm, 80nm, 800nm);
2nd, experimental method:Performance test is carried out using method described in GB/T 6495.1-1996;
3rd, experimental result:It is shown in Table 3.
The back reflection layer thickness of table 3 influences result to the battery performance of cadmium telluride diaphragm solar battery sample
Battery sample Eff (%) Voc(V) Jsc(mA/cm2) FF (%)
Sample d 7.54 0.798 14.2 44.85
Sample e 12.41 0.825 22.3 67.455
Sample f 12.85 0.824 22.4 69.619
Wherein, Eff is efficiency for charge-discharge, and Voc is open-circuit voltage, and Jsc is short circuit current flow, and FF is fill factor, curve factor.
As can be seen from the above data, when back reflection layer thickness is 80nm~800nm, battery performance is preferred side preferably Case, is most preferably scheme when back reflection layer thickness is 80nm with reference to different-thickness consumption of raw materials amount.
It the above is only the preferred embodiment of the application, it is noted that above-mentioned preferred embodiment is not construed as pair The limitation of the application, the protection domain of the application should be defined by claim limited range.For the art For those of ordinary skill, do not departing from spirit and scope, some improvements and modifications can also be made, these change Enter and retouch the protection domain that also should be regarded as the application.

Claims (6)

1. a kind of cadmium telluride diaphragm solar battery, including substrate, it is characterised in that be provided with laminate film on the substrate, The laminate film includes nesa coating, Window layer, light absorbing layer, back contact, back reflection layer and the back of the body successively from lower to upper Electrode layer;The Window layer is cadmium sulphide membrane layer, and the light absorbing layer is Cadimium telluride thin film layer, and the back contact is sulphur cyanogen The cuprous film layer of acid, the back reflection layer is Ag films layer.
2. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the dorsum electrode layer includes Nickel film layer and chrome thin film layer.
3. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the light absorbing layer thickness For 50nm~2000nm.
4. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the back contact thickness For 5nm~100nm.
5. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the back reflection layer thickness For 30nm~800nm.
6. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the laminate film is also wrapped Encapsulating material layer and backboard are included, the encapsulating material layer and the backboard are set in turn on the dorsum electrode layer.
CN201621460223.7U 2016-12-28 2016-12-28 A kind of cadmium telluride diaphragm solar battery Active CN206460967U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039554A (en) * 2016-12-28 2017-08-11 成都中建材光电材料有限公司 A kind of cadmium telluride diaphragm solar battery and preparation method
CN113503505A (en) * 2021-05-21 2021-10-15 深圳市圆能科技有限公司 Quartzy landscape lamp of photovoltaic integration

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039554A (en) * 2016-12-28 2017-08-11 成都中建材光电材料有限公司 A kind of cadmium telluride diaphragm solar battery and preparation method
CN113503505A (en) * 2021-05-21 2021-10-15 深圳市圆能科技有限公司 Quartzy landscape lamp of photovoltaic integration

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