CN206460967U - A kind of cadmium telluride diaphragm solar battery - Google Patents
A kind of cadmium telluride diaphragm solar battery Download PDFInfo
- Publication number
- CN206460967U CN206460967U CN201621460223.7U CN201621460223U CN206460967U CN 206460967 U CN206460967 U CN 206460967U CN 201621460223 U CN201621460223 U CN 201621460223U CN 206460967 U CN206460967 U CN 206460967U
- Authority
- CN
- China
- Prior art keywords
- layer
- solar battery
- cadmium telluride
- light absorbing
- diaphragm solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Laminate film is provided with a kind of cadmium telluride diaphragm solar battery of disclosure, including substrate, the substrate, the laminate film includes nesa coating, Window layer, light absorbing layer, back contact, back reflection layer and dorsum electrode layer successively from lower to upper；The Window layer is cadmium sulphide membrane layer, and the light absorbing layer is Cadimium telluride thin film layer, and the back contact is cuprous thiocyanate membrane layer, and the back reflection layer is Ag films layer.The battery reduces the thickness of light absorbing layer on the basis of the absorption efficiency of sunshine is ensured, reduces the consumption of Te raw materials, reduces production cost, and batch growth feasibility is high.
Description
Technical field
The application is related to field technical field of solar batteries, and in particular to a kind of cadmium telluride diaphragm solar battery.
Background technology
Under the promotion of the requirements such as society, environment, the energy and sustainable development, the popularization and application of new energy have turned into complete
Ball is known together.And solar energy occupies critical role as topmost regenerative resource in new energy in future development.Film is too
Positive electricity pond mainly includes the polytypes such as non-crystalline silicon, cadmium telluride, CIGS and dye sensitization, and it is few due to consumable material,
With the very big reduction cost space known together, by the increasing concern of countries in the world.
Wherein, cadmium telluride (CdTe) thin film solar cell, its main structure body by light absorbing layer CdTe layer and Window layer CdS
Layer is formed, extinction efficiency factor>105cm-1, can absorb more than 90% light, conversion efficiency is more than 8%, to be of new generation high
Effect, low cost, can large-scale industrial production solar cell.And cadmium telluride (CdTe) thin film solar cell conventional at present
CdTe layer thickness is 3 microns to 8 microns, and element T e is rare element, and material is rare and expensive, causes cadmium telluride (CdTe)
Thin film solar cell production cost is high, as the big factor for limiting its development.
Utility model content
In view of this, this application provides a kind of cadmium telluride diaphragm solar battery, the battery is ensureing sunshine
On the basis of absorption efficiency, reduce the thickness of light absorbing layer, reduce the consumption of Te raw materials, reduce production cost, batch growth can
Row is high.
To solve above technical problem, the technical scheme that the application is provided is a kind of cadmium telluride diaphragm solar battery, bag
Include and laminate film is provided with substrate, the substrate, the laminate film includes nesa coating, window successively from lower to upper
Layer, light absorbing layer, back contact, back reflection layer and dorsum electrode layer；The Window layer is cadmium sulphide membrane layer, the light absorbing layer
For Cadimium telluride thin film layer, the back contact is cuprous thiocyanate membrane layer, and the back reflection layer is Ag films layer.
It is preferred that, the substrate is glass or high molecular polymer.
It is preferred that, the high molecular polymer is polyimides.
It is preferred that, the nesa coating is TCO thin film.
It is preferred that, the dorsum electrode layer includes nickel film layer and chrome thin film layer.
It is preferred that, the window layer thickness is 10nm~200nm.
It is preferred that, the light absorbing layer thickness is 50nm~2000nm.
It is preferred that, the light absorbing layer thickness is 500nm~2000nm.
It is preferred that, the light absorbing layer thickness is 500nm.
It is preferred that, the back contact thickness is 5nm~100nm.
It is preferred that, the back contact thickness is 20nm.
It is preferred that, the back reflection layer thickness is 30nm~800nm.
It is preferred that, the back reflection layer thickness is 80nm~800nm.
It is preferred that, the back reflection layer thickness is 80nm
It is preferred that, the laminate film also includes encapsulating material layer and backboard, the encapsulating material layer and the backboard according to
It is secondary to be arranged on the dorsum electrode layer.
It is preferred that, the backboard is glass.
In technical scheme, a kind of cadmium telluride diaphragm solar battery, including substrate is provided with the substrate
Laminate film, it is anti-that the laminate film includes nesa coating, Window layer, light absorbing layer, back contact, the back of the body successively from lower to upper
It is packaged after penetrating layer and back electrode；The Window layer is cadmium sulphide membrane layer, and the light absorbing layer is Cadimium telluride thin film layer；Institute
It is cuprous thiocyanate membrane layer to state back contact, and cuprous thiocyanate membrane layer easily realizes Ohmic contact with Cadimium telluride thin film layer,
Nesa coating has anti-reflection effect, and more light can be made to enter inside battery；, can plus the back reflection layer for Ag films layer
Make the light of arrival battery bottom fully be reflected back inside battery to be absorbed again, lift the capturing efficiency to incident sunshine,
Improve the light utilization efficiency of battery；Back electrode includes nickel film layer and chrome thin film layer, is sandwich construction, with good electric conductivity；
Therefore, the cadmium telluride diaphragm solar battery that the application is provided can be such that sunshine is effectively reflected, in light absorbing layer
Extraordinary quantum efficiency can be realized on path, on the basis of the absorption efficiency of sunshine is ensured, realizes and reduces light absorbs
The thickness of layer, reduces the consumption of Te raw materials, reduces production cost.
Compared with prior art, its detailed description is as follows by the application：
The application sets Ag films layer, has the integration more than or equal to 95% in 600nm to 1200nm wave-length coverage
Total reflectivity, effectively lifts the capturing efficiency to incident sunshine, and then improves the absorption efficiency to sunshine, and obtains efficient
Rate cadmium telluride diaphragm solar battery, reduces production cost；Meanwhile, Ag films thickness degree is 30nm~800nm, also effectively control
Cost；
Back contact is made using cheap cuprous thiocyanate membrane layer, cuprous thiocyanate membrane layer holds with Cadimium telluride thin film layer
Ohmic contact is easily realized, the absorption efficiency of sunshine is improved；
The application can realize extraordinary quantum efficiency on the path of light absorbing layer, ensure the absorption effect of sunshine
On the basis of rate, reduce the thickness of light absorbing layer, reduce the consumption of Te raw materials, reduction production cost batch growth feasibility is high.
Brief description of the drawings
Fig. 1 is cadmium telluride thin-film battery structural representation described herein.
Embodiment
In order that those skilled in the art more fully understands the technical scheme of the application, implement below in conjunction with the application
Accompanying drawing in example, clear, complete description is carried out to the technical scheme in the embodiment of the present application, it is clear that described embodiment
Only some embodiments of the present application, rather than whole embodiments.Based on embodiments herein, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of the application protection.
Embodiment 1
It is thin that lamination is provided with a kind of cadmium telluride diaphragm solar battery as shown in Figure 1, including substrate 1, the substrate 1
Film, the laminate film includes nesa coating 2, Window layer 3, light absorbing layer 4, back contact 5, back reflection successively from lower to upper
Layer 6, dorsum electrode layer 7, encapsulating material layer 8 and backboard 9；Wherein, the substrate 1 is glass or high molecular polymer, the high score
Sub- polymer is polyimides；The nesa coating 2 is TCO thin film；The Window layer 3 is cadmium sulphide membrane layer, and thickness is
10nm~200nm；The light absorbing layer 4 is Cadimium telluride thin film layer, and thickness is 500nm；The back contact 5 is cuprous sulfocyanide
Film layer, thickness is 20nm；The back reflection layer 6 is Ag films layer, and thickness is 80nm；The dorsum electrode layer 7 includes nickel film
Layer 10 and chrome thin film layer 11, the backboard 9 are glass.
Embodiment 2
Light absorbing layer thickness influences on the battery performance of cadmium telluride diaphragm solar battery sample
1st, laboratory sample：Cadmium telluride diaphragm solar battery sample A, B, C, D (light absorbing layer thickness be respectively 50nm,
300nm、500nm、2000nm)；
2nd, experimental method：Performance test is carried out using method described in GB/T 6495.1-1996；
3rd, experimental result：It is shown in Table 1.
The light absorbing layer thickness of table 1 influences result to the battery performance of cadmium telluride diaphragm solar battery sample
| Battery sample | Eff (%) | Voc(V) | Jsc(mA/cm2) | FF (%) |
| Sample A | 4.35 | 0.623 | 15.2 | 45.936 |
| Sample B | 7.64 | 0.795 | 18.7 | 51.352 |
| Sample C | 12.85 | 0.824 | 22.4 | 69.619 |
| Sample D | 12.93 | 0.822 | 22.8 | 68.991 |
Wherein, Eff is efficiency for charge-discharge, and Voc is open-circuit voltage, and Jsc is short circuit current flow, and FF is fill factor, curve factor.
When absorber thickness is 500nm~2000nm as can be seen from the above data, battery performance is preferred side preferably
Case, is most preferably scheme when absorber thickness is 500nm with reference to different-thickness consumption of raw materials amount.
Embodiment 3
Back contact thickness influences on the battery performance of cadmium telluride diaphragm solar battery sample
1st, laboratory sample：Cadmium telluride diaphragm solar battery sample a, b, c (back contact thickness be respectively 5nm, 20nm,
100nm)；
2nd, experimental method：Performance test is carried out using method described in GB/T 6495.1-1996；
3rd, experimental result：It is shown in Table 2.
The back contact thickness of table 2 influences result to the battery performance of cadmium telluride diaphragm solar battery sample
| Battery sample | Eff (%) | Voc(V) | Jsc(mA/cm2) | FF (%) |
| Sample a | 9.26 | 0.788 | 21.3 | 0.5517 |
| Sample b | 12.85 | 0.824 | 22.4 | 69.619 |
| Sample c | 7.87 | 0.791 | 20.1 | 49.500 |
Wherein, Eff is efficiency for charge-discharge, and Voc is open-circuit voltage, and Jsc is short circuit current flow, and FF is fill factor, curve factor.
Preferably, i.e. the thickness of back contact is in 20nm, its battery for sample b battery performances as can be seen from the above data
Performance is most preferably scheme more preferably.
Embodiment 4
Back reflection layer thickness influences on the battery performance of cadmium telluride diaphragm solar battery sample
1st, laboratory sample：Cadmium telluride diaphragm solar battery sample d, e, f (back reflection layer thickness be respectively 30nm, 80nm,
800nm)；
2nd, experimental method：Performance test is carried out using method described in GB/T 6495.1-1996；
3rd, experimental result：It is shown in Table 3.
The back reflection layer thickness of table 3 influences result to the battery performance of cadmium telluride diaphragm solar battery sample
| Battery sample | Eff (%) | Voc(V) | Jsc(mA/cm2) | FF (%) |
| Sample d | 7.54 | 0.798 | 14.2 | 44.85 |
| Sample e | 12.41 | 0.825 | 22.3 | 67.455 |
| Sample f | 12.85 | 0.824 | 22.4 | 69.619 |
Wherein, Eff is efficiency for charge-discharge, and Voc is open-circuit voltage, and Jsc is short circuit current flow, and FF is fill factor, curve factor.
As can be seen from the above data, when back reflection layer thickness is 80nm~800nm, battery performance is preferred side preferably
Case, is most preferably scheme when back reflection layer thickness is 80nm with reference to different-thickness consumption of raw materials amount.
It the above is only the preferred embodiment of the application, it is noted that above-mentioned preferred embodiment is not construed as pair
The limitation of the application, the protection domain of the application should be defined by claim limited range.For the art
For those of ordinary skill, do not departing from spirit and scope, some improvements and modifications can also be made, these change
Enter and retouch the protection domain that also should be regarded as the application.
Claims (6)
1. a kind of cadmium telluride diaphragm solar battery, including substrate, it is characterised in that be provided with laminate film on the substrate,
The laminate film includes nesa coating, Window layer, light absorbing layer, back contact, back reflection layer and the back of the body successively from lower to upper
Electrode layer；The Window layer is cadmium sulphide membrane layer, and the light absorbing layer is Cadimium telluride thin film layer, and the back contact is sulphur cyanogen
The cuprous film layer of acid, the back reflection layer is Ag films layer.
2. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the dorsum electrode layer includes
Nickel film layer and chrome thin film layer.
3. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the light absorbing layer thickness
For 50nm~2000nm.
4. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the back contact thickness
For 5nm~100nm.
5. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the back reflection layer thickness
For 30nm~800nm.
6. a kind of cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the laminate film is also wrapped
Encapsulating material layer and backboard are included, the encapsulating material layer and the backboard are set in turn on the dorsum electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621460223.7U CN206460967U (en) | 2016-12-28 | 2016-12-28 | A kind of cadmium telluride diaphragm solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621460223.7U CN206460967U (en) | 2016-12-28 | 2016-12-28 | A kind of cadmium telluride diaphragm solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206460967U true CN206460967U (en) | 2017-09-01 |
Family
ID=59696536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621460223.7U Active CN206460967U (en) | 2016-12-28 | 2016-12-28 | A kind of cadmium telluride diaphragm solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206460967U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039554A (en) * | 2016-12-28 | 2017-08-11 | 成都中建材光电材料有限公司 | A kind of cadmium telluride diaphragm solar battery and preparation method |
| CN113503505A (en) * | 2021-05-21 | 2021-10-15 | 深圳市圆能科技有限公司 | Quartzy landscape lamp of photovoltaic integration |
-
2016
- 2016-12-28 CN CN201621460223.7U patent/CN206460967U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039554A (en) * | 2016-12-28 | 2017-08-11 | 成都中建材光电材料有限公司 | A kind of cadmium telluride diaphragm solar battery and preparation method |
| CN113503505A (en) * | 2021-05-21 | 2021-10-15 | 深圳市圆能科技有限公司 | Quartzy landscape lamp of photovoltaic integration |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207320169U (en) | A kind of perovskite battery of graded bandgap | |
| CN110061136B (en) | Back contact type perovskite solar cell and preparation method thereof | |
| CN203481251U (en) | Thin film solar cell | |
| CN106024917B (en) | A kind of solar battery sheet and solar cell module | |
| CN103594627A (en) | Inversed organic thin-film solar cell and manufacturing method of inversed organic thin-film solar cell | |
| WO2021047673A1 (en) | Cadmium telluride solar cell and preparation method thereof | |
| CN101510470A (en) | Laminated structure of amorphous silicon solar battery and dye sensitization battery | |
| CN102244111A (en) | Thin film solar cell | |
| CN206460967U (en) | A kind of cadmium telluride diaphragm solar battery | |
| CN107039554A (en) | A kind of cadmium telluride diaphragm solar battery and preparation method | |
| CN110808299B (en) | Flexible high-absorptivity thin film solar cell | |
| CN219628267U (en) | Solar laminated battery, battery assembly and photovoltaic system | |
| CN106876513B (en) | It is a kind of equal from the lateral heterogeneous integrated solar cell of polariton | |
| CN105226126A (en) | A kind of solar battery structure | |
| CN111370580A (en) | Solar cell with hole transport layer | |
| CN101866969B (en) | Solar cell | |
| CN101719521A (en) | Solar cell of sandwich structure consisting of Si/FeSi2/Si and manufacturing method thereof | |
| CN201051505Y (en) | A mixed solar battery | |
| CN204441296U (en) | A kind of CIGS based thin film solar cell | |
| CN102306678A (en) | Thin film solar battery | |
| CN208706661U (en) | A kind of solar cell | |
| CN206878022U (en) | A kind of multi-crystal silicon film solar battery | |
| CN205789995U (en) | A kind of solar battery sheet and solar module | |
| CN205881920U (en) | Cadmium telluride thin -film solar cell and module thereof | |
| CN204905264U (en) | A thin -film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |