CN111370580A - Solar cell with hole transport layer - Google Patents

Solar cell with hole transport layer Download PDF

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Publication number
CN111370580A
CN111370580A CN201811597895.6A CN201811597895A CN111370580A CN 111370580 A CN111370580 A CN 111370580A CN 201811597895 A CN201811597895 A CN 201811597895A CN 111370580 A CN111370580 A CN 111370580A
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China
Prior art keywords
transport layer
hole transport
layer
solar cell
hole
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Pending
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CN201811597895.6A
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Chinese (zh)
Inventor
刘亚君
路静雅
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Xi'an Juke Chuangtong Environmental Protection Technology Co ltd
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Xi'an Juke Chuangtong Environmental Protection Technology Co ltd
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Priority to CN201811597895.6A priority Critical patent/CN111370580A/en
Publication of CN111370580A publication Critical patent/CN111370580A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention relates to a solar cell with a hole transport layer, comprising: a transparent conductive electrode; a hole blocking layer on the transparent conductive electrode; an electron transport layer on the hole blocking layer; an insulating layer on the electron transport layer; a perovskite light absorption layer located on the insulating layer; the hole transport layer is positioned on the perovskite light absorption layer; and the metal electrode is positioned on the hole transport layer. The hole transport layer of the solar cell comprises the first hole transport layer, the second hole transport layer and the third hole transport layer, and phosphorescent luminescent dyes are doped in the first hole transport layer, the second hole transport layer and the third hole transport layer, so that the hole transport capability of the hole transport layer is improved, and the photoelectric conversion efficiency of the solar cell is improved.

Description

Solar cell with hole transport layer
Technical Field
The invention relates to the technical field of electromagnetism, in particular to a solar cell with a hole transport layer.
Background
With the increasingly prominent problems of energy shortage and environmental pollution, the development and utilization of new energy are very urgent. Solar power generation is a new energy which is inexhaustible, inexhaustible and pollution-free, and is receiving more and more attention from people.
Solar cells are devices that can convert light energy into electric energy, and currently, development and application of solar cells are gradually commercialized and industrialized. The perovskite solar cell has the advantages of high photoelectric conversion efficiency, low cost, simple preparation process and the like, and is a novel photovoltaic device with the greatest prospect at present, wherein the perovskite is used as a light absorption material, has high extinction coefficient and strong absorption capacity for visible light, and has good bipolar transport capacity.
However, the hole transport ability of the current solar cell is limited, thereby limiting the photoelectric conversion efficiency of the solar cell.
Disclosure of Invention
Therefore, in order to solve the technical defects and shortcomings of the prior art, the invention provides a solar cell with a hole transport layer.
Specifically, an embodiment of the present invention provides a solar cell having a hole transport layer, including:
a transparent conductive electrode;
a hole blocking layer on the transparent conductive electrode;
an electron transport layer on the hole blocking layer;
an insulating layer on the electron transport layer;
a perovskite light absorption layer located on the insulating layer;
the hole transport layer is positioned on the perovskite light absorption layer and comprises a first hole transport layer, a second hole transport layer and a third hole transport layer, the first hole transport layer, the second hole transport layer and the third hole transport layer are sequentially stacked on the perovskite light absorption layer, and the first hole transport layer, the second hole transport layer and the third hole transport layer are all doped with phosphorescent luminescent dyes;
and the metal electrode is positioned on the hole transport layer.
In one embodiment of the present invention, the doping concentration of the first hole transport layer is greater than the doping concentration of the second hole transport layer, and the doping concentration of the second hole transport layer is greater than the doping concentration of the third hole transport layer.
In one embodiment of the invention, the second stepA hole transport layer having a doping concentration of 1 × 1018cm-3～3×1018cm-3The doping concentration of the second hole transport layer is 3 × 1017cm-3～5×1017cm-3The doping concentration of the third hole transport layer is 1 × 1016cm-3～5×1016cm-3。
In one embodiment of the present invention, the thickness of the first hole transport layer is 100 to 120nm, the thickness of the second hole transport layer is 60 to 100nm, and the thickness of the third hole transport layer is 20 to 60 nm.
In one embodiment of the present invention, the transparent conductive electrode is FTO, AZO, or ITO.
The embodiment of the invention has the following advantages:
the hole transport layer of the solar cell comprises the first hole transport layer, the second hole transport layer and the third hole transport layer, and phosphorescent luminescent dyes are doped in the first hole transport layer, the second hole transport layer and the third hole transport layer, so that the hole transport capability of the hole transport layer is improved, and the photoelectric conversion efficiency of the solar cell is improved.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a solar cell having a hole transport layer according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another solar cell with a hole transport layer according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a solar cell having a hole transport layer according to an embodiment of the present invention. An embodiment of the present invention provides a solar cell, including: a transparent conductive electrode 11, a hole blocking layer 12, an electron transport layer 13, an insulating layer 14, a perovskite light absorbing layer 15, a hole transport layer 16, a metal electrode 17, wherein,
a transparent conductive electrode 11;
specifically, the solar cell converts light energy into electric energy, and sunlight passes through the transparent conductive electrode 11, so that the transparent conductive electrode 11 is made of a transparent material, the transparent conductive electrode 11 is made of a conductive material, and the transparent conductive electrode 11 may be FTO (fluorine tin oxide), AZO (aluminum zinc oxide), or ITO (indium tin oxide).
Preferably, the transparent conductive electrode 11 is FTO, which has heat-resistant and chemical-resistant stability.
Preferably, the thickness of the transparent conductive electrode 11 is 60-100 nm.
A hole blocking layer 12 on the transparent conductive electrode 11;
specifically, the material of the hole blocking layer 12 may be an alkali metal carbonate or an alkali metal oxide.
Preferably, the thickness of the hole blocking layer 12 is 10 to 40 nm.
The hole blocking layer 12 can prevent holes in the perovskite light absorption layer 15 from being transmitted into the transparent conductive electrode 11, thereby reducing the recombination effect of carriers, so that the solar cell has high photoelectric conversion efficiency and long-term illumination stability.
Referring to fig. 2, an electron transport layer 13 is disposed on the hole blocking layer 12, and the electron transport layer 13 includes a first TiO2Layer 131, second TiO2Layer 132 and third TiO2Layer 133, first TiO2Layer 131, second TiO2Layer 132 and third TiO2Layer 133 is in turn laminated on hole-blocking layer 12, first TiO2Layer 131, second TiO2Layer 132 and third TiO2Layers 133 are all doped with Al;
further, the first TiO2The doping concentration of layer 131 is greater than the second TiO2Doping concentration of layer 132, second TiO2The doping concentration of layer 132 is greater than the third TiO2The doping concentration of layer 133.
Preferably, the first TiO2The doping concentration of layer 131 is 3 × 1020cm-3～5×1020cm-3。
Preferably, a second TiO2The doping concentration of layer 132 is 3 × 1019cm-3～5×1019cm-3。
Preferably, a third TiO2The doping concentration of layer 133 is 3 × 1018cm-3～5×1018cm-3。
Further, the first TiO2The thickness of the layer 131 is greater than the second TiO2Thickness of layer 132, second TiO2The thickness of the layer 132 is greater than the third TiO2The thickness of layer 133.
Preferably, the first TiO2The layer 131 has a thickness of 150 to 200 nm.
Preferably, a second TiO2The layer 132 has a thickness of 80 to 130 nm.
Preferably, a third TiO2The thickness of the layer 133 is 20 to 60 nm.
The electron transport layer mainly plays a role of collecting and transporting electrons, and the electron transport layer of the embodiment includes the first TiO2Layer, second TiO2Layer and third TiO2Layer, first TiO2Layer, second TiO2Layer and third TiO2The layers are all doped with aluminum, and the doping concentration and the thickness of the first TiO2 layer, the second TiO2 layer and the third TiO2 layer are all gradually reduced, so that the concentration of aluminum elements is subjected to gradient transformation, the conductivity and the electron transmission capability of the electron transmission layer are improved, and the photoelectric conversion efficiency and the stability of the solar cell are improved. And TiO22As an electron transport layer, the light absorbing perovskite layer can not only transport electrons, but also block holes, thereby further preventing the perovskiteAnd the holes are transmitted into the transparent conductive electrode, so that the photoelectric conversion efficiency of the solar cell is further improved.
An insulating layer 14 on the electron transport layer 13;
the insulating layer 14 can separate the transparent conductive electrode 11 and the metal electrode, thereby achieving the purpose of avoiding internal short circuits of the solar cell. The material of the insulating layer 14 is an insulating material.
Preferably, the material of the insulating layer 14 is silicon oxide.
Preferably, the thickness of the insulating layer 14 is 5 to 50 nm.
A perovskite light absorbing layer 15 on the insulating layer 14;
the perovskite light absorption layer 15 is used for absorbing light to generate a photovoltaic effect, and the perovskite which is used as a light absorption material has high extinction coefficient, strong absorption capacity on visible light and good bipolar transport capacity.
Preferably, the perovskite light absorbing layer 15 may be doped with ZnO and the doping concentration is 1 × 1018cm-3～5×1018cm-3ZnO belongs to inorganic materials, has good stability and electron transmission capability, and can improve the photoelectric property and stability of the solar cell by doping ZnO in the perovskite light absorption layer 15.
Preferably, the thickness of the perovskite light absorption layer 15 is 30 to 300 nm.
A hole transport layer 16 located on the perovskite light absorption layer 15, the hole transport layer 16 including a first hole transport layer 161, a second hole transport layer 162 and a third hole transport layer 163, the first hole transport layer 161, the second hole transport layer 162 and the third hole transport layer 163 being sequentially stacked on the perovskite light absorption layer, the first hole transport layer 161, the second hole transport layer 162 and the third hole transport layer 163 being doped with a phosphorescent light emitting dye;
further, the doping concentration of the first hole transporting layer 161 is greater than that of the second hole transporting layer 162, and the doping concentration of the second hole transporting layer 162 is greater than that of the third hole transporting layer 163;
preferably, the doping concentration of the first hole transport layer 161 is 1 × 1018cm-3～3×1018cm-3；
Preferably, the doping concentration of the second hole transport layer 162 is 3 × 1017cm-3～5×1017cm-3；
Preferably, the doping concentration of the third hole transport layer 163 is 1 × 1016cm-3～5×1016cm-3；
Further, the thickness of the first hole transporting layer 161 is greater than that of the second hole transporting layer 162, and the thickness of the second hole transporting layer 162 is greater than that of the third hole transporting layer 163;
preferably, the thickness of the first hole transport layer (161) is 100 to 120 nm;
preferably, the thickness of the second hole transport layer 162 is 60 to 100 nm;
preferably, the thickness of the third hole transport layer 163 is 20 to 60 nm;
preferably, the material of the hole transport layer 16 is InGaN.
The hole transport layer of this embodiment includes first hole transport layer, second hole transport layer and third hole transport layer, first hole transport layer, second hole transport layer and third hole transport layer all dope phosphorescent luminous dye, and first hole transport layer, the doping concentration and the thickness of second hole transport layer and third hole transport layer all reduce gradually, make the concentration of phosphorescent luminous dye be gradient conversion, properly dope phosphorescent luminous dye in the phosphorescent luminous dye can improve its hole transport ability, when setting up it as concentration layer gradient conversion, can further improve its hole transport ability, promote the promotion of carrier balance factor, thereby improve solar cell's photoelectric conversion efficiency.
A metal electrode 17 on the hole transport layer 16;
preferably, the material of the metal electrode 17 is Au, Pt, Ti/Au, Ni/Au or Cr/Au.
Preferably, the thickness of the metal electrode 17 is 1 to 10 nm.
The hole transport layer of the solar cell comprises the first hole transport layer, the second hole transport layer and the third hole transport layer, and phosphorescent luminescent dyes are doped in the first hole transport layer, the second hole transport layer and the third hole transport layer, so that the hole transport capability of the hole transport layer is improved, and the photoelectric conversion efficiency of the solar cell is improved.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (5)

1. A solar cell having a hole transport layer, comprising:
a transparent conductive electrode (11);
a hole blocking layer (12) on the transparent conductive electrode (11);
an electron transport layer (13) on the hole blocking layer (12);
an insulating layer (14) on the electron transport layer (13);
a perovskite light absorbing layer (15) on the insulating layer (14);
a hole transport layer (16) on the perovskite light absorption layer (15), the hole transport layer (16) comprising a first hole transport layer (161), a second hole transport layer (162), and a third hole transport layer (163), the first hole transport layer (161), the second hole transport layer (162), and the third hole transport layer (163) being sequentially stacked on the perovskite light absorption layer, the first hole transport layer (161), the second hole transport layer (162), and the third hole transport layer (163) each being doped with a phosphorescent dye;
a metal electrode (17) on the hole transport layer (16).
2. The solar cell according to claim 1, wherein the doping concentration of the first hole transport layer (161) is greater than the doping concentration of the second hole transport layer (162), and the doping concentration of the second hole transport layer (162) is greater than the doping concentration of the third hole transport layer (163).
3. Solar cell according to claim 2, characterized in that the doping concentration of the first hole transport layer (161) is 1 × 1018cm-3～3×1018cm-3The doping concentration of the second hole transport layer (162) is 3 × 1017cm-3～5×1017cm-3The doping concentration of the third hole transport layer (163) is 1 × 1016cm-3～5×1016cm-3。
4. The solar cell according to claim 3, wherein the first hole transport layer (161) has a thickness of 100 to 120nm, the second hole transport layer (162) has a thickness of 60 to 100nm, and the third hole transport layer (163) has a thickness of 20 to 60 nm.
5. Solar cell according to claim 1, characterized in that the transparent conductive electrode (11) is FTO, AZO or ITO.
CN201811597895.6A 2018-12-26 2018-12-26 Solar cell with hole transport layer Pending CN111370580A (en)

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CN201811597895.6A CN111370580A (en) 2018-12-26 2018-12-26 Solar cell with hole transport layer

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Application Number Priority Date Filing Date Title
CN201811597895.6A CN111370580A (en) 2018-12-26 2018-12-26 Solar cell with hole transport layer

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113161488A (en) * 2021-01-28 2021-07-23 徐州革锐能源科技有限公司 Homogeneous junction charge transmission film for perovskite solar cell
FR3132790A1 (en) * 2022-02-15 2023-08-18 Isorg Image acquisition device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113161488A (en) * 2021-01-28 2021-07-23 徐州革锐能源科技有限公司 Homogeneous junction charge transmission film for perovskite solar cell
FR3132790A1 (en) * 2022-02-15 2023-08-18 Isorg Image acquisition device
WO2023156135A1 (en) * 2022-02-15 2023-08-24 Isorg Image acquisition device

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