CN101515508A - Dye-sensitization solar battery with up-conversion material signal enhancement layer - Google Patents
Dye-sensitization solar battery with up-conversion material signal enhancement layer Download PDFInfo
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- CN101515508A CN101515508A CN 200910021662 CN200910021662A CN101515508A CN 101515508 A CN101515508 A CN 101515508A CN 200910021662 CN200910021662 CN 200910021662 CN 200910021662 A CN200910021662 A CN 200910021662A CN 101515508 A CN101515508 A CN 101515508A
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- enhancement layer
- conversion material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a dye-sensitization solar battery with an up-conversion material signal enhancement layer, which is composed of a photo-anode substrate, a semiconductor porous thin film, dye, an electrolyte, a counter electrode and the up-conversion material signal enhancement layer; the signal enhancement layer made of the up-conversion material can absorb the infrared part of the sunlight and convert the same into visible lights for the excitation of the dye, thus greatly improving the utilization ratio of the solar energy to thereby efficiently improve the photoelectric conversion efficiency of the battery.
Description
(1) technical field:
The invention belongs to field of solar energy, relate to a kind of DSSC.
(2) background technology:
Along with global energy crisis is serious day by day, the urgent hope of people can be found a kind of clean energy resource of sustainable development.Solar energy receives the concern of countries in the world day by day as a kind of inexhaustible natural energy source.DSSC is compared with the traditional silicon solar cell, and is with low cost, makes simply, is subjected to global extensive concern, is considered to the most promising solar cell of future generation.But at present the actual light photoelectric transformation efficiency of DSSC has only 11%, also has certain gap from the requirement of industrialization.
Although domestic and international for many years many groups are doing a lot of work aspect the photoelectric conversion efficiency that improves DSSC, effect is not remarkable.One of them major reason is because the absorption spectrum of dyestuff is difficult to be complementary with the emission spectrum of the sun, thus the solar energy utilization ratio of integral battery door system not high due to.As the universally recognized dyestuff N719 ruthenium dye that is used for DSSC of present people, its absorption spectrum mainly concentrates on the visible region of 400～600nm, and in the sunlight except that containing 44% visible light, also contain 3% ultraviolet ray and 53% infrared ray, obviously the most of energy in the sunlight all is not utilized effectively.
(3) summary of the invention:
The objective of the invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of photoelectric conversion efficiency high new dye sensitization solar battery.
A kind of DSSC that has up-conversion material signal enhancement layer is by photo-anode substrate 1, semiconductor porous film 2, dyestuff 3, electrolyte 4, constitute electrode 5 and up-conversion material signal enhancement layer 6; Being semiconductor porous film 2 above the photo-anode substrate 1, is dyestuff 3 above the semiconductor porous film 2, is electrolyte 4 above the dyestuff 3, is to electrode 5 above the electrolyte 4, to being up-conversion material signal enhancement layer 6 above the electrode 5.
Described photo-anode substrate 1 is for being coated with glass substrate, metal substrate or the flexible base, board of conductive film.
Described semiconductor porous film 2 is TiO
2Film, ZnO film, other wide bandgap semiconductor oxide or their composite membrane.
Described dyestuff 3 is bipyridyl ruthenium dye or natural dye, and bipyridyl ruthenium class dyestuff is N719, N3, Z907 or CYC-B1 etc., and natural dye is cumarin, porphyrin, perylene, carotenoid or Hua Jingsu etc.。
Described electrolyte 4 is for containing liquid electrolyte, gel electrolyte or the solid electrolyte of iodine and lithium iodide.
Described to electrode 5 be described to electrode 5 for the platinum plating electro-conductive glass to electrode, platinum plating conductive resin substrate to electrode, plating graphite glass to electrode or plating graphite glass to electrode.
Described up-conversion material signal enhancement layer 6 is rare earth ion doped fluorine compounds, rare earth ion doped sulphur compound, rare earth ion doped halogen compound or rare earth ion doped oxide.
Characteristics of the present invention are on original DSSC architecture basics, increase a signal enhancement layer.This signal enhancement layer mainly is made of up-conversion.So-called up-conversion is the luminescent material of the anti-Stokes law of a class, and it can be converted to the short visible light of wavelength by the infrared light that wavelength is long.The signal enhancement layer of being made up of up-conversion can absorb the infrared part in the sunlight, and is converted into visible light and is used for exciting of dyestuff, has improved solar energy utilization rate greatly, thereby has effectively improved the photoelectric conversion efficiency of battery.The Stokes law is that the wavelength of fluorescent emission is greater than exciting light wavelength.But some fluorescent material absorbs the atom of exciting light, if not being in ground state, the anti-Stokes fluorescence emission then occurs.
Above-mentioned enhancement layer can absorb infrared light, and luminous at short wavelength, as luminous blue, green, yellow and red equiwavelength.
Described up-conversion comprises that rare earth ion doped fluorine compounds, sulphur compound, halogen compound, oxide material system and other have the material of last conversion performance.
Effect benefit of the present invention is that up-conversion material signal enhancement layer can absorb the infrared part in the sunlight, and luminous at visible region, and then is absorbed by the dyestuff in the battery, has improved solar energy utilization rate, and the photoelectric properties of battery are improved.
(4) description of drawings:
Fig. 1 has the DSSC structure chart of up-conversion material signal enhancement layer.
Wherein: 1 is photo-anode substrate; 2 is semiconductor porous film; 3 is dyestuff; 4 is electrolyte; 5 is to electrode; 6 is up-conversion material signal enhancement layer.
(5) embodiment:
Be described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Referring to Fig. 1, a kind of DSSC that has up-conversion material signal enhancement layer is by photo-anode substrate 1, semiconductor porous film 2, dyestuff 3, electrolyte 4, constitute electrode 5 and up-conversion material signal enhancement layer 6.Being semiconductor porous film 2 above the photo-anode substrate 1, is dyestuff 3 above the semiconductor porous film 2, is electrolyte 4 above the dyestuff 3, is to electrode 5 above the electrolyte 4, to being up-conversion material signal enhancement layer 6 above the electrode 5.
Its photo-anode substrate 1 is for being coated with glass substrate, metal substrate or the flexible base, board of conductive film.Semiconductor porous film 2 is TiO
2, ZnO or other wide bandgap semiconductor oxide and their composite membrane.Dyestuff 3 is for there being the strong dyestuff that absorbs at visible region, as bipyridyl ruthenium dye or natural dye, bipyridyl ruthenium class dyestuff is N719, N3, Z907 or CYC-B1 etc., and natural dye is cumarin, porphyrin, perylene, carotenoid or Hua Jingsu etc.。Electrolyte 4 is for containing liquid electrolyte, gel electrolyte or the solid electrolyte of iodine and lithium iodide.To electrode 5 for being deposited on metal platinum electrode or the graphite electrode that has catalytic action on electro-conductive glass or the conductive resin substrate, described to electrode 5 for the platinum plating electro-conductive glass to electrode, platinum plating conductive resin substrate to electrode, plating graphite glass to electrode or plating graphite glass to electrode.。Up-conversion material signal enhancement layer 6 is by rare earth ion doped fluorine compounds: as Ho
3+: BaY
2F
8, Pr
3+: K
2YF
5, rare earth ion doped sulphur compound: as Pr
3+/ Yb
3+-Ga
2O
3: La
2S
3, rare earth ion doped halogen compound Er
3+: Cs
3Lu
2Br
9, Yb
3+: Cs
3R
2X
9, rare earth ion doped oxide is as Sm
3+: Y
3Al
5O
12, wait material to form with upper conversion function.
The platinum plating electro-conductive glass to electrode be by be deposited on that platinum on the electro-conductive glass and electro-conductive glass constitute to electrode, platinum plating conductive resin substrate be by be deposited on that platinum on the electro-conductive glass and conductive resin substrate constitute to electrode, plating graphite glass to electrode be by be deposited on that graphite on the electro-conductive glass and electro-conductive glass constitute to electrode, plating graphite glass to electrode be by be deposited on that graphite on the electro-conductive glass and electro-conductive glass constitute to electrode.
Above content is to further describing that the present invention did in conjunction with concrete preferred implementation; can not assert that the specific embodiment of the present invention only limits to this; for the general technical staff of the technical field of the invention; without departing from the inventive concept of the premise; can also make some simple deduction or replace, all should be considered as belonging to the present invention and determine scope of patent protection by claims of being submitted to.
Claims (7)
1, a kind of DSSC that has up-conversion material signal enhancement layer is characterized in that: by photo-anode substrate (1), semiconductor porous film (2), dyestuff (3), electrolyte (4), electrode (5) and up-conversion material signal enhancement layer (6) are constituted; It above the photo-anode substrate (1) semiconductor porous film (2), above the semiconductor porous film (2) dyestuff (3), being electrolyte (4) above the dyestuff (3), is to electrode (5) above the electrolyte (4), to being up-conversion material signal enhancement layer (6) above the electrode (5).
2, a kind of DSSC that has up-conversion material signal enhancement layer according to claim 1 is characterized in that: described photo-anode substrate (1) is for being coated with glass substrate, metal substrate or the flexible base, board of conductive film.
3, a kind of DSSC that has up-conversion material signal enhancement layer according to claim 1 is characterized in that: described semiconductor porous film (2) is TiO
2Film, ZnO film or their composite membrane.
4, a kind of DSSC that has up-conversion material signal enhancement layer according to claim 1 is characterized in that: described dyestuff (3) is bipyridyl ruthenium dye or natural dye.
5, a kind of DSSC that has up-conversion material signal enhancement layer according to claim 1 is characterized in that: described electrolyte (4) is for containing liquid electrolyte, gel electrolyte or the solid electrolyte of iodine and lithium iodide.
6, a kind of DSSC that has up-conversion material signal enhancement layer according to claim 1 is characterized in that: described to electrode (5) for the platinum plating electro-conductive glass to electrode, platinum plating conductive resin substrate to electrode, plating graphite glass to electrode or plating graphite glass to electrode.
7, a kind of DSSC that has up-conversion material signal enhancement layer according to claim 1 is characterized in that: described up-conversion material signal enhancement layer (6) is rare earth ion doped fluorine compounds, rare earth ion doped sulphur compound, rare earth ion doped halogen compound or rare earth ion doped oxide.
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142521A (en) * | 2010-01-29 | 2011-08-03 | 海洋王照明科技股份有限公司 | Organic solar battery and preparation method thereof |
| CN102148331A (en) * | 2010-02-08 | 2011-08-10 | 海洋王照明科技股份有限公司 | Solar cell with small organic molecule mixture heterojunction and preparation method of solar cell |
| CN102231334A (en) * | 2011-04-20 | 2011-11-02 | 东南大学 | Preparation method of solar battery photoanode based on localized surface plasmon resonance (LSPR) |
| CN102420050A (en) * | 2010-09-27 | 2012-04-18 | 福盈科技化学股份有限公司 | Working electrode and manufacturing method thereof as well as dye sensitized solar battery comprising electrode |
| CN102479835A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Tandem junction solar cell with high photoelectric conversion efficiency (PCE) |
| CN102479863A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Three-layer solar cell with high photoelectric conversion efficiency |
| CN102479836A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Solar cell with high photoelectric conversion efficiency and high-low temperature intrinsic amorphous silicon layers |
| CN102479873A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Laminated solar cell with high photoelectric conversion efficiency (PCE) and manufacturing method thereof |
| CN102479834A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | High photoelectric conversion efficiency solar cell with microcrystalline silicon intrinsic layer |
| CN102714277A (en) * | 2010-03-15 | 2012-10-03 | 海洋王照明科技股份有限公司 | Organic solar cell and method for manufacturing the same |
| CN102082031B (en) * | 2009-11-27 | 2013-04-10 | 济南大学 | Novel dye-sensitized solar cell photoanode |
| CN104966618A (en) * | 2015-07-31 | 2015-10-07 | 合肥工业大学 | Dye-sensitized solar cell photo anode and preparation method thereof |
| CN105895376A (en) * | 2016-06-07 | 2016-08-24 | 上海纳米技术及应用国家工程研究中心有限公司 | Yttrium oxide composite ordered titanium dioxide photo-anode and preparation and application |
| CN106128768A (en) * | 2016-07-04 | 2016-11-16 | 厦门理工学院 | A kind of DSSC and preparation method thereof |
| CN107815311A (en) * | 2017-11-06 | 2018-03-20 | 哈尔滨工程大学 | A kind of synergisting method of the infrared induction heat radiation based on rare earth doped material |
| CN110829957A (en) * | 2018-08-07 | 2020-02-21 | 汉能移动能源控股集团有限公司 | Solar power generation tile and manufacturing method thereof |
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2009
- 2009-03-24 CN CN 200910021662 patent/CN101515508A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082031B (en) * | 2009-11-27 | 2013-04-10 | 济南大学 | Novel dye-sensitized solar cell photoanode |
| CN102142521A (en) * | 2010-01-29 | 2011-08-03 | 海洋王照明科技股份有限公司 | Organic solar battery and preparation method thereof |
| CN102148331A (en) * | 2010-02-08 | 2011-08-10 | 海洋王照明科技股份有限公司 | Solar cell with small organic molecule mixture heterojunction and preparation method of solar cell |
| CN102714277A (en) * | 2010-03-15 | 2012-10-03 | 海洋王照明科技股份有限公司 | Organic solar cell and method for manufacturing the same |
| CN102420050A (en) * | 2010-09-27 | 2012-04-18 | 福盈科技化学股份有限公司 | Working electrode and manufacturing method thereof as well as dye sensitized solar battery comprising electrode |
| CN102479835A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Tandem junction solar cell with high photoelectric conversion efficiency (PCE) |
| CN102479863A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Three-layer solar cell with high photoelectric conversion efficiency |
| CN102479836A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Solar cell with high photoelectric conversion efficiency and high-low temperature intrinsic amorphous silicon layers |
| CN102479873A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Laminated solar cell with high photoelectric conversion efficiency (PCE) and manufacturing method thereof |
| CN102479834A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | High photoelectric conversion efficiency solar cell with microcrystalline silicon intrinsic layer |
| CN102231334B (en) * | 2011-04-20 | 2012-10-24 | 东南大学 | Preparation method of solar battery photoanode based on localized surface plasmon resonance (LSPR) |
| CN102231334A (en) * | 2011-04-20 | 2011-11-02 | 东南大学 | Preparation method of solar battery photoanode based on localized surface plasmon resonance (LSPR) |
| CN104966618A (en) * | 2015-07-31 | 2015-10-07 | 合肥工业大学 | Dye-sensitized solar cell photo anode and preparation method thereof |
| CN104966618B (en) * | 2015-07-31 | 2017-12-26 | 合肥工业大学 | A kind of dye-sensitized solar cell anode and preparation method thereof |
| CN105895376A (en) * | 2016-06-07 | 2016-08-24 | 上海纳米技术及应用国家工程研究中心有限公司 | Yttrium oxide composite ordered titanium dioxide photo-anode and preparation and application |
| CN106128768A (en) * | 2016-07-04 | 2016-11-16 | 厦门理工学院 | A kind of DSSC and preparation method thereof |
| CN106128768B (en) * | 2016-07-04 | 2018-07-20 | 厦门理工学院 | A kind of dye-sensitized solar cells and preparation method thereof |
| CN107815311A (en) * | 2017-11-06 | 2018-03-20 | 哈尔滨工程大学 | A kind of synergisting method of the infrared induction heat radiation based on rare earth doped material |
| CN107815311B (en) * | 2017-11-06 | 2020-11-03 | 哈尔滨工程大学 | Infrared-induced thermal radiation synergistic method based on rare earth doped material |
| CN110829957A (en) * | 2018-08-07 | 2020-02-21 | 汉能移动能源控股集团有限公司 | Solar power generation tile and manufacturing method thereof |
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Application publication date: 20090826 |