CN101866759A - Dye-sensitized solar cell - Google Patents
Dye-sensitized solar cell Download PDFInfo
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- CN101866759A CN101866759A CN 201010187415 CN201010187415A CN101866759A CN 101866759 A CN101866759 A CN 101866759A CN 201010187415 CN201010187415 CN 201010187415 CN 201010187415 A CN201010187415 A CN 201010187415A CN 101866759 A CN101866759 A CN 101866759A
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- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000009413 insulation Methods 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 22
- 239000003792 electrolyte Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 239000002608 ionic liquid Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000010345 tape casting Methods 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 230000001172 regenerating effect Effects 0.000 abstract description 2
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 239000000975 dye Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920003182 Surlyn® Polymers 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- YZYYOOFASFTAEK-UHFFFAOYSA-N [I].C(CCC)N1CN(C=C1)C Chemical compound [I].C(CCC)N1CN(C=C1)C YZYYOOFASFTAEK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2081—Serial interconnection of cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a dye-sensitized solar cell, which belongs to the technical field of green regenerative energy sources. The solar cell consists of a plurality of independent cell units of which light nodes and counter electrodes all have insulation etching lines. Metal gate electrodes and the insulation etching lines are distributed on the light node and the counter electrode of the solar cell at intervals; and the metal gate electrodes and the insulation etching lines are close to each other and distributed in parallel. The photoelectric conversion efficiency of the independent dye-sensitized solar cell is insusceptible to non-uniform preparation of a single cell, the independent dye-sensitized solar cells can be optionally combined in a series-parallel connection way according to different requirements to obtain relatively high photoelectric conversion efficiency, and butt-joint plug plate type large-scale solar cell can be further formed. The dye-sensitized solar cell has the advantages that: a high photoelectric current and a relative high voltage can be obtained at the same time by a rational series-parallel connection node; and thus, the output power of the whole solar cell is improved.
Description
Technical field
The invention belongs to technical field of green regenerative energy sources, relate to a kind of independent parallel solar cell.
Background technology
Enter 21st century, along with greenhouse effects of the earth and atmosphere polluting problem are on the rise, the key subjects that the renewable green energy resource of development and utilization has become human society and faced.Solar energy is our inexhaustible, nexhaustible clear energy sources, is transform light energy that electric energy is an important way of utilizing solar energy directly with solar power generation.Though the traditional silicon solar cell has entered the practicability stage at present, also exist manufacturing cost height, complex manufacturing and high purity silicon lack of material and can cause problems such as environmental pollution and consumes energy in process of production.Engineering college of Swiss Confederation in 1991
Deng the people document (O ' Regan B,
M.Nature, 1991,353 (6346): reported 737-740.) a kind of new dye sensitization solar battery that utilizes nature light compositing principle (dye-sensitized solar cell, DSC).Small size the DSC (＜0.2cm of present making in laboratory
2) having reached 12% photoelectric conversion efficiency, the research level of small size DSC is near the research of amorphous solar cells level.Present various countries are in the world actively developing the research work of large-area dye-sensitized solar battery.
Traditional large-area dye-sensitized solar battery designs and is made into series connection and dual mode in parallel usually, and the DSC that wherein connects is divided into W type and Z type again.There are forward and reverse two kinds of unit in W type DSC at plane of illumination, promptly the light anode last be positive element, to electrode last be reverse unit.W type DSC shortcoming is that light entrance face exists forward and reverse unit, causes the current density of every battery inconsistent, and the uniformity of monoblock battery is affected, and can reduce the electric current and the voltage of integral battery door.Compare with the W type, Z type battery DSC assembly all is made up of positive element at light entrance face.Though Z type DSC can access high voltage, exist shortcomings such as internal resistance is big, active area is little, complex manufacturing technology.And series-connected cell internal element series connection back electronics is drawn by a fence electrode, and is inhomogeneous if any a making, will influence the performance of black box.Though DSC in parallel has simple in structure and the manufacture craft characteristic of simple, the total voltage of inner DSC in parallel is very little.In sum, DSC in parallel can only obtain high current among traditional large tracts of land DSC, and series connection DSC can only obtain high voltage, and the two all is inhomogeneous if any a making, can reduce the performance of integral battery door significantly.
Summary of the invention
At the problems referred to above, the invention provides a kind of independent parallel large-area dye-sensitized solar battery.For achieving the above object, technical scheme of the present invention is to have designed and produced a kind of independent parallel DSSC.This independent parallel DSSC all is made up of forward separate unit battery at light entrance face.This solar cell is made up of several separate unit batteries, each independently element cell comprise the light anode, to electrode and electrolyte.The light anode of this DSSC and to metal gate electrode and the insulation etched line of all distributing on the electrode, and metal gate electrode and the tight adjacent parallel of insulation etched line distribute.The photoelectric conversion efficiency of this independent parallel DSSC can not made the inhomogeneous appreciable impact that is subjected to because of wall scroll, and can be in any parallel combination according to different needs and also can obtain higher photoelectric conversion efficiency, can further form butt joint board plug type large-sized solar battery component.This structure not only can access high voltage but also can also obtain high current, and internal resistance is little, manufacture craft is simple.Utilize this invention technology to improve exerting oneself of whole solar cell and photoelectric conversion efficiency.
Concrete technical scheme of the present invention is as follows:
This solar cell is made up of several separate unit batteries, each independently element cell comprise the light anode, to electrode and electrolyte; Each independently element cell the light anode and to metal gate electrode and the insulation etched line of all distributing on the electrode, and metal gate electrode and the tight adjacent parallel of insulation etched line distribute; Described smooth anode is made of substrate, conducting film, semiconductive thin film, metal gate electrode and insulated wire.
Described is to be made of conductive substrates, catalyst layer, metal gate electrode and insulation etched line to electrode.
Described insulation etched line is with laser or plasma or photoresists etching or with physics or chemical method etching, and the width of etched line is 0.001-10mm.
Described metal gate electrode is made up of the metal of low conductivity, and the metal of low conductivity is the alloy that one or two or more kinds metal in copper, aluminium, gold, silver, iron, nickel, titanium, platinum or the tin constitutes, and the width of gate electrode is 0.001-10mm.
Insulation etched line and the tight adjacent distributions of metal gate electrode, the distance between the two is 0.01-1000 μ m;
Described baseplate material is glass substrate, metal substrate or polymeric substrate.
The electric conducting material of described conducting film is tin oxide, indium oxide, tin indium oxide, antimony tin, graphite, carbon nano-tube, fluorine doped indium tin oxide or fluorine doping antimony tin.
Described semiconductive thin film, catalyst layer and metal gate electrode are by print process, spraying process or knife coating preparation.Its semiconductive thin film and catalyst layer can not cover insulation etched line and metal gate electrode.On semiconductive thin film, soak dyestuff then.
Redox material and electrolyte have been comprised in the described electrolyte; Electrolyte is organic solvent, ionic liquid, meltbility salt, semi-molten salt or water.
Adopt polymeric membrane, curing glue, glass dust, pottery to wait and protect metal gate electrode and insulating regions and seal two electrodes.
Advantage of the present invention is:
(1) photoelectric conversion efficiency of this independent parallel DSSC can not made the inhomogeneous appreciable impact that is subjected to because of wall scroll.
(2) by making the element cell that the insulation etched line is formed independent parallel, can make battery carry out connection in series-parallel arbitrarily according to different needs.
(3) after having designed rational series-parallel system, when obtaining the high light electric current, also can obtain higher voltage, and then improve the photoelectric conversion efficiency of whole solar cell.Can enlarge the scope of application and the purposes of solar cell.
(4) on conductive substrates, make the insulation etched line, conductive substrates is divided into several less independent sectors, the resistance of the resistance ratio monoblock large substrates of battery is little, so can increase substantially the efficient and the power output of large-area dye-sensitized solar battery, and then realize the industrialization of DSSC.
Description of drawings
Fig. 1 is the profile of large-area dye-sensitized solar battery of the present invention.
Fig. 2 is the DSSC in parallel I-V performance diagram made from conventional art after the DSSC parallel connection of the present invention relatively.
Among the figure: 1 substrate; 2 nesa coatings; 3 semiconductor layers; 4 metal gate electrodes; 5 insulation etched line; 6 pairs of electrodes conduct substrates; 7 catalyst layers; 8 protection sealants; 9 electrolyte.
Embodiment
Be described in detail specific embodiments of the invention below in conjunction with technical scheme and accompanying drawing.
According to shown in Figure 1, the present invention includes the light anode, to electrode and electrolyte, wherein the light anode comprises substrate 1, nesa coating 2, semiconductor layer 3, metal gate electrode 4, insulation etched line 5.Above each several part is combined as and is coated with one deck conducting film 2 in substrate 1, and conducting film 2 is provided with semiconductor layer 3, metal gate electrode 4 and insulation etched line 5, and its semiconductor layer 3 can not cover metal gate electrode 4 and insulation etched line 5.It comprises electrodes conduct substrate 6, catalyst layer 7, metal gate electrode 4 and insulation etched line 5 electrode, and catalyst layer 7 is prepared in the electrodes conduct substrate 6 and can not cover metal gate electrode 4 and insulation etched line 5.Light anode and electrode is oppositely arranged; electrolyte 9 at the light anode with to electrode between; protection sealant 8 had both played protection metal gate electrode 4 and has not been corroded by electrolyte 9 and protect insulation etched line 5 to prevent the effect that electrolyte enters, and played again to seal the light anode and to the effect of electrode.
Embodiment 1
Use the FTO transparent conducting glass of 50mm * 50mm, make the insulation etched line on its surface with laser ablation, the width of insulating regions is 0.1mm, and length is 50mm, and the spacing of two insulating regions is 11mm.Use method for printing screen printing conductive silver paste on transparent conducting glass then, make metal gate electrode, at 150 ℃ of following prebake 10min, at 500 ℃ of following sintering 15min.Metal gate electrode is closely adjacent with the insulation etched line, and the two distance is 1mm.The metal gate electrode width is 1mm, and thickness is 4 μ m, and length is 50mm, and the distance between the two silver medal lines is 11mm.And then on transparent conducting glass, print the layer of titanium dioxide slurry with the method for silk screen printing, at 200 ℃ of oven dry 10min down, again at 500 ℃ of following sintering 30min.When temperature was reduced to 80 ℃, it is immersed in the N719 dyestuff, and (concentration of N719 was 5 * 10
-4Mol/L) carried out dye load in 17 hours in acetonitrile and the t-butanol solution, the light anode of making is standby.
Making is to electrode, adopt the conduct of FTO electro-conductive glass to the electrodes conduct substrate, adopt metal gate electrode of making on the light anode and the method that insulate etched line to make to metal gate electrode on the electrode and insulation etched line, the aqueous isopropanol (containing polyethylene glycol, ethyl cellulose in the solution) that adopts the 0.5wt% chloroplatinic acid is as the platinum slurry, adopt the method for silk screen printing on to the electrodes conduct substrate, to print the platinum slurry, at 500 ℃ of following sintering 30min, obtain platinum to electrode.
Adopting thickness is that the macromolecule heat-sealing film surlyn film of 60 μ m is with the light anode with to the electrode heat-sealing.At last, by to the hand-hole on the electrode, electrolyte (the 1-butyl-3 methylimidazole iodine of 0.6M, the iodine of 0.03M and the acetonitrile solution of 0.06M lithium iodide) injected the light anode and between the electrode.With ultra-violet curing glue hand-hole is sealed again, seal hand-hole with surlyn film and slide secondary at last, finish the making of dye-sensitized solar battery assembly of the present invention, prepared H type dye sensitization solar battery assembly A, B, C by different connected modes.
Under the simulated solar rayed of AM1.5, the photoelectric conversion efficiency of test solar module, photoelectric conversion efficiency behind connection in series-parallel A assembly is 3.11%, and the photoelectric conversion efficiency of B series component is 2.92%, and the photoelectric conversion efficiency of C parallel component is 3.10%.
At the light anode and to electrode on type metal gate electrode, all the other preparation methods assemble the traditional parallel dye-sensitized solar battery assembly D that makes with embodiment 1, and the photoelectric conversion efficiency of gained only is 2.07%.Proved by The above results: the photoelectric conversion efficiency after the DSSC parallel connection that the technology of the present invention is made improves 49.76% than the photoelectric conversion efficiency of the DSSC in parallel that conventional art is made.I-V characteristic curve that the two compares and performance parameter are by shown in Fig. 2 and the table 1:
Type metal gate electrode and insulation etched line on the light anode reaches electrode, all the other preparation methods are with embodiment 1, and assembling is made into traditional tandem W type dye sensitization solar battery assembly E and F, obtains 1.54% and 1.63% photoelectric conversion efficiency respectively.
Proved by The above results: the photoelectric conversion efficiency after the DSSC series connection that the technology of the present invention is made improves 89.61% and 79.14% respectively than the W type of conventional art making and the photoelectric conversion efficiency of Z type tandem dye-sensitised solar cell, and the two performance parameter relatively is as shown in table 1.
Table 1: novel component of the present invention and conventional art are made the performance parameter contrast of assembly
Claims (7)
1. DSSC, it is characterized in that: this solar cell is made up of several separate unit batteries, each independently element cell comprise the light anode, to electrode and electrolyte; Each independently element cell the light anode and to metal gate electrode and the insulation etched line of all distributing on the electrode, and metal gate electrode and the tight adjacent parallel of insulation etched line distribute; Described smooth anode is made of substrate, conducting film, semiconductive thin film, metal gate electrode and insulation etched line; Described electrode is made of conductive substrates, catalyst layer, metal gate electrode and insulation etched line.
2. DSSC as claimed in claim 1 is characterized in that: described insulation etched line is with laser or plasma or photoresists etching or with physics or chemical method etching, and the width of insulation etched line is 0.001-10mm.
3. DSSC as claimed in claim 1, it is characterized in that: described metal gate electrode is made up of the metal of low conductivity, the metal of low conductivity is the alloy that one or two or more kinds metal in copper, aluminium, gold, silver, iron, nickel, titanium, platinum or the tin constitutes, and the width of metal gate electrode is 0.001-10mm.
4. as claim 1,2 or 3 described DSSC, it is characterized in that: described substrate is glass substrate, metal substrate or polymeric substrate.
5. as claim 1,2 or 3 described DSSC, it is characterized in that: the electric conducting material of described conducting film is tin oxide, indium oxide, tin indium oxide, antimony tin, graphite, carbon nano-tube, fluorine doped indium tin oxide or fluorine doping antimony tin.
6. as DSSC as described in the claim 1,2 or 3, it is characterized in that: described semiconductive thin film, catalyst layer and metal gate electrode are by print process, spraying process or knife coating preparation.
7. as claim 1,2 or 3 described DSSC, it is characterized in that: comprised redox material and electrolyte in the electrolyte; Electrolyte is organic solvent, ionic liquid, meltbility salt, semi-molten salt or water.
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| CN 201010187415 CN101866759A (en) | 2010-05-31 | 2010-05-31 | Dye-sensitized solar cell |
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| CN 201010187415 CN101866759A (en) | 2010-05-31 | 2010-05-31 | Dye-sensitized solar cell |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543256A (en) * | 2012-03-14 | 2012-07-04 | 奇瑞汽车股份有限公司 | Chloroplatinic acid slurry, preparation method thereof, counter electrode, and dye-sensitized solar cell |
| CN102903535A (en) * | 2012-09-28 | 2013-01-30 | 彩虹集团公司 | Method for prolonging service life of large-size dye-sensitized solar cell assembly |
| CN103578783A (en) * | 2013-07-31 | 2014-02-12 | 营口奥匹维特新能源科技有限公司 | Dye-sensitized solar cell |
| CN105185595A (en) * | 2015-09-16 | 2015-12-23 | 南昌航空大学 | Sensitized solar cell containing electrolyte layer with controllable thickness |
| CN111162171A (en) * | 2018-11-08 | 2020-05-15 | 杭州纤纳光电科技有限公司 | Perovskite solar cell with parallel structure and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241956A (en) * | 2008-01-11 | 2008-08-13 | 上海纳晶科技有限公司 | A making method for large-area nano film solar battery |
| CN101567267A (en) * | 2009-04-30 | 2009-10-28 | 上海大学 | Conductive substrate of large-area dye-sensitized solar cell and solar cell thereof |
| CN101587781A (en) * | 2009-06-26 | 2009-11-25 | 大连理工大学 | Process for preparing dye-sensitized solar cell by complete spray coating process |
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2010
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101241956A (en) * | 2008-01-11 | 2008-08-13 | 上海纳晶科技有限公司 | A making method for large-area nano film solar battery |
| CN101567267A (en) * | 2009-04-30 | 2009-10-28 | 上海大学 | Conductive substrate of large-area dye-sensitized solar cell and solar cell thereof |
| CN101587781A (en) * | 2009-06-26 | 2009-11-25 | 大连理工大学 | Process for preparing dye-sensitized solar cell by complete spray coating process |
Cited By (8)
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| CN102543256A (en) * | 2012-03-14 | 2012-07-04 | 奇瑞汽车股份有限公司 | Chloroplatinic acid slurry, preparation method thereof, counter electrode, and dye-sensitized solar cell |
| CN102543256B (en) * | 2012-03-14 | 2015-04-29 | 奇瑞汽车股份有限公司 | Chloroplatinic acid slurry, preparation method thereof, counter electrode, and dye-sensitized solar cell |
| CN102903535A (en) * | 2012-09-28 | 2013-01-30 | 彩虹集团公司 | Method for prolonging service life of large-size dye-sensitized solar cell assembly |
| CN103578783A (en) * | 2013-07-31 | 2014-02-12 | 营口奥匹维特新能源科技有限公司 | Dye-sensitized solar cell |
| CN103578783B (en) * | 2013-07-31 | 2016-04-13 | 营口奥匹维特新能源科技有限公司 | A kind of DSSC |
| CN105185595A (en) * | 2015-09-16 | 2015-12-23 | 南昌航空大学 | Sensitized solar cell containing electrolyte layer with controllable thickness |
| CN111162171A (en) * | 2018-11-08 | 2020-05-15 | 杭州纤纳光电科技有限公司 | Perovskite solar cell with parallel structure and preparation method |
| CN111162171B (en) * | 2018-11-08 | 2023-04-07 | 杭州纤纳光电科技有限公司 | Perovskite solar cell with parallel structure and preparation method |
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