CN203481251U - Thin film solar cell - Google Patents
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- CN203481251U CN203481251U CN201320660111.6U CN201320660111U CN203481251U CN 203481251 U CN203481251 U CN 203481251U CN 201320660111 U CN201320660111 U CN 201320660111U CN 203481251 U CN203481251 U CN 203481251U
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- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 5
- 238000000605 extraction Methods 0.000 claims 1
- 238000005265 energy consumption Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 7
- 238000010248 power generation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
一种薄膜太阳能电池，它涉及一种太阳能电池。本实用新型为了解决现有的晶体硅太阳电池存在材料消耗多和制造能耗高的问题。本实用新型包括第一导电玻璃基底（1）、沉积吸收层（2）、缓冲层（3）、导电银胶（4）和第二导电玻璃基底（5），第一导电玻璃基底（1）、沉积吸收层（2）、缓冲层（3）、导电银胶（4）和第二导电玻璃基底（5）由上至下依次设置，第一导电玻璃基底（1）和第二导电玻璃基底（5）上引出电极6。本实用新型用于太阳能发电。
A thin-film solar cell relates to a solar cell. The utility model aims to solve the problems of high material consumption and high manufacturing energy consumption in the existing crystalline silicon solar cells. The utility model comprises a first conductive glass substrate (1), a deposition absorption layer (2), a buffer layer (3), a conductive silver glue (4) and a second conductive glass substrate (5), the first conductive glass substrate (1) , deposition absorption layer (2), buffer layer (3), conductive silver glue (4) and second conductive glass substrate (5) are arranged in sequence from top to bottom, the first conductive glass substrate (1) and the second conductive glass substrate (5) The upper lead-out electrode 6 . The utility model is used for solar power generation.
Description
技术领域technical field
本实用新型涉及一种太阳能电池，具体涉及一种薄膜太阳能电池。The utility model relates to a solar cell, in particular to a thin film solar cell.
背景技术Background technique
目前世界上研究开发出的太阳电池种类繁多，按电池结构可分类为：同质结太阳电池、异质结太阳电池、肖特基结太阳电池、薄膜太阳电池等。市场上主要以硅基太阳能电池为主，但硅基太阳能电池价格昂贵，且存在光致衰减效应，使得在太阳光下长时间照射会产生效率的衰减，从而导致整个电池效率的降低。薄膜太阳能电池相对晶体硅电池具有阴雨天光谱效应好、质轻、价格低廉、柔性等优点，从而受到了国内外的广泛关注。At present, there are many kinds of solar cells researched and developed in the world, which can be classified into: homojunction solar cells, heterojunction solar cells, Schottky junction solar cells, thin-film solar cells, etc. according to the cell structure. Silicon-based solar cells are mainly used in the market, but silicon-based solar cells are expensive and have a light-induced attenuation effect, so that long-term exposure to sunlight will cause efficiency attenuation, resulting in a decrease in the efficiency of the entire cell. Compared with crystalline silicon solar cells, thin-film solar cells have the advantages of good spectral effect in rainy days, light weight, low price, and flexibility, so they have attracted widespread attention at home and abroad.
硅属于间接跃迁类型，其吸收系数上升非常平缓，所以在太阳光照射下，光可到达距表面20μm以上相当深的地方，在此还能产生电子-空穴对。同时由于光致衰退效应的存在，导致晶体硅薄膜电池效率降低，现在学术界和产业界普遍认为太阳能电池发展已经进入了第三代。第一代为单晶硅太阳能电池，第二代为多晶硅、非晶硅等低成本太阳能电池，第三代就是高效、低成本、可大规模工业化生产薄膜太阳能电池。因此，Ⅰ-Ⅲ-Ⅵ族化合物如铜铟镓硒或铜铟硫作为新型太阳能电池材料正受到广泛关注。现有的晶体硅太阳电池存在材料消耗多和制造能耗高的问题。Silicon belongs to the indirect transition type, and its absorption coefficient rises very gently, so under sunlight, the light can reach a place at a depth of more than 20 μm from the surface, where electron-hole pairs can also be generated. At the same time, due to the existence of the light-induced degradation effect, the efficiency of crystalline silicon thin-film cells is reduced. Now the academic and industrial circles generally believe that the development of solar cells has entered the third generation. The first generation is monocrystalline silicon solar cells, the second generation is low-cost solar cells such as polycrystalline silicon and amorphous silicon, and the third generation is high-efficiency, low-cost, and large-scale industrial production of thin-film solar cells. Therefore, Ⅰ-Ⅲ-Ⅵ group compounds such as copper indium gallium selenide or copper indium sulfur are attracting extensive attention as new solar cell materials. Existing crystalline silicon solar cells have the problems of high material consumption and high manufacturing energy consumption.
实用新型内容Utility model content
本实用新型的目的是为了解决现有的晶体硅太阳电池存在材料消耗多和制造能耗高的问题。进而提供一种薄膜太阳能电池。The purpose of the utility model is to solve the problems of high material consumption and high manufacturing energy consumption in the existing crystalline silicon solar cells. Furthermore, a thin film solar cell is provided.
本实用新型的技术方案是：一种薄膜太阳能电池，包括第一导电玻璃基底、沉积吸收层、缓冲层、导电银胶和第二导电玻璃基底，第一导电玻璃基底、沉积吸收层、缓冲层、导电银胶和第二导电玻璃基底由上至下依次设置，第一导电玻璃基底和第二导电玻璃基底上引出电极。The technical scheme of the utility model is: a thin-film solar cell, comprising a first conductive glass substrate, a deposition absorption layer, a buffer layer, a conductive silver glue and a second conductive glass substrate, the first conductive glass substrate, a deposition absorption layer, and a buffer layer , conductive silver glue, and a second conductive glass substrate are sequentially arranged from top to bottom, and electrodes are drawn out from the first conductive glass substrate and the second conductive glass substrate.
本实用新型与现有技术相比具有以下效果：Compared with the prior art, the utility model has the following effects:
1.本实用新型的太阳能薄膜电池与晶体硅太阳电池相比具有如下优点：1)材料消耗少，薄膜式太阳能电池由于只需使用极薄光电转换材料，相对于晶体硅太阳电池必须维持一定厚度而言，薄膜式太阳能电池功能材料厚度仅几十微米，材料使用非常少；2)制造能耗低，薄膜式太阳能电池大多使用化学气相沉积CVD，物理化学相沉积PCVD等技术，相较于晶体硅太阳电池的晶体拉制、切割工艺可降低制造能耗。1. Compared with the crystalline silicon solar cell, the solar thin-film solar cell of the present utility model has the following advantages: 1) less material consumption, and the thin-film solar cell only needs to use a very thin photoelectric conversion material, and must maintain a certain thickness relative to the crystalline silicon solar cell For thin-film solar cells, the thickness of functional materials is only tens of microns, and the materials used are very few; 2) The energy consumption of manufacturing is low, and most thin-film solar cells use chemical vapor deposition CVD, physical chemical phase deposition PCVD and other technologies, compared with crystal The crystal drawing and cutting process of silicon solar cells can reduce the energy consumption of manufacturing.
2.本实用新型操作简单，对环境无污染。各层的制备条件都较易获得，不需要真空条件及复杂昂贵的设备，且获得的各层薄膜都较均匀，结合力强。2. The utility model is easy to operate and has no pollution to the environment. The preparation conditions of each layer are relatively easy to obtain, no vacuum conditions and complicated and expensive equipment are required, and the obtained films of each layer are relatively uniform and have strong bonding force.
附图说明Description of drawings
图1是本实用新型的主视图；图2是图1的俯视图。Fig. 1 is a front view of the utility model; Fig. 2 is a top view of Fig. 1 .
具体实施方式Detailed ways
具体实施方式一：结合图1和图2说明本实施方式，本实施方式包括第一导电玻璃基底1、沉积吸收层2、缓冲层3、导电银胶4和第二导电玻璃基底5，第一导电玻璃基底1、沉积吸收层2、缓冲层3、导电银胶4和第二导电玻璃基底5由上至下依次设置，第一导电玻璃基底1和第二导电玻璃基底5上引出电极6。Specific Embodiment 1: This embodiment is described in conjunction with FIG. 1 and FIG. 2. This embodiment includes a first conductive glass substrate 1, a deposited absorbing layer 2, a buffer layer 3, a conductive silver glue 4, and a second
具体实施方式二：结合图1和图2说明本实施方式，本实施方式的第一导电玻璃基底1为正电极。如此设置，便于使用。其它组成和连接关系与具体实施方式一相同。Embodiment 2: This embodiment will be described with reference to FIG. 1 and FIG. 2 . The first conductive glass substrate 1 in this embodiment is a positive electrode. This is set up for ease of use. Other compositions and connections are the same as in the first embodiment.
具体实施方式三：结合图1和图2说明本实施方式，本实施方式的第二导电玻璃基底5为负电极。如此设置，便于使用。其它组成和连接关系与具体实施方式一相同。Specific Embodiment 3: This embodiment is described with reference to FIG. 1 and FIG. 2 . The second
具体实施方式四：结合图1和图2说明本实施方式，本实施方式的第一导电玻璃基底1的长度为30mm，宽度为10mm，厚度为3mm。如此设置，材料消耗少，制造能耗低。其它组成和连接关系与具体实施方式三相同。Embodiment 4: This embodiment is described with reference to FIG. 1 and FIG. 2 . The length of the first conductive glass substrate 1 of this embodiment is 30 mm, the width is 10 mm, and the thickness is 3 mm. With such arrangement, the material consumption is less and the manufacturing energy consumption is low. Other compositions and connections are the same as those in the third embodiment.
具体实施方式五：结合图1和图2说明本实施方式，本实施方式的第二导电玻璃基底5的长度为30mm，宽度为10mm，厚度为3mm。如此设置，材料消耗少，制造能耗低。其它组成和连接关系与具体实施方式四相同。Embodiment 5: This embodiment is described with reference to FIG. 1 and FIG. 2 . The length of the second
具体实施方式六：结合图1和图2说明本实施方式，本实施方式的沉积吸收层2的长度为20mm，宽度为10mm，厚度为2×10-3mm。如此设置，材料消耗少，制造能耗低。其它组成和连接关系与具体实施方式五相同。Embodiment 6: This embodiment is described with reference to FIG. 1 and FIG. 2 . The deposited absorbing layer 2 in this embodiment has a length of 20 mm, a width of 10 mm, and a thickness of 2×10 −3 mm. With such arrangement, the material consumption is less and the manufacturing energy consumption is low. Other compositions and connections are the same as those in
具体实施方式七：结合图1和图2说明本实施方式，本实施方式的缓冲层3的长度为18mm，宽度为10mm，厚度为4×10-3mm。如此设置，材料消耗少，制造能耗低。其它组成和连接关系与具体实施方式六相同。Embodiment 7: This embodiment will be described with reference to FIG. 1 and FIG. 2 . The buffer layer 3 in this embodiment has a length of 18 mm, a width of 10 mm, and a thickness of 4×10 −3 mm. With such arrangement, the material consumption is less and the manufacturing energy consumption is low. Other compositions and connections are the same as those in Embodiment 6.
具体实施方式八：结合图1和图2说明本实施方式，本实施方式的导电银胶4的长度为17mm，宽度为10mm，厚度为2×10-3mm。如此设置，材料消耗少，制造能耗低。其它组成和连接关系与具体实施方式七相同。Embodiment 8: This embodiment is described with reference to FIG. 1 and FIG. 2 . The length of the conductive silver paste 4 of this embodiment is 17 mm, the width is 10 mm, and the thickness is 2×10 −3 mm. With such arrangement, the material consumption is less and the manufacturing energy consumption is low. Other compositions and connections are the same as those in Embodiment 7.
具体实施方式九：结合图1和图2说明本实施方式，本实施方式的沉积吸收层2为半导体纳米材料制成的沉积吸收层。如此设置，材料消耗少，制造能耗低。其它组成和连接关系与具体实施方式八相同。Ninth specific embodiment: This embodiment is described with reference to FIG. 1 and FIG. 2 . The deposition absorption layer 2 of this embodiment is a deposition absorption layer made of semiconductor nanomaterials. With such arrangement, the material consumption is less and the manufacturing energy consumption is low. Other compositions and connections are the same as those in Embodiment 8.
具体实施方式十：结合图1和图2说明本实施方式，本实施方式的缓冲层3为In2S3材料制成的缓冲层。如此设置，材料消耗少，制造能耗低。其它组成和连接关系与具体实施方式九相同。Embodiment 10: This embodiment is described with reference to FIG. 1 and FIG. 2 . The buffer layer 3 of this embodiment is a buffer layer made of In 2 S 3 material. With such arrangement, the material consumption is less and the manufacturing energy consumption is low. Other compositions and connections are the same as those in Embodiment 9.
本实用新型针对间接带隙半导体存在厚度较厚一般达20um，且对光吸收不充分的问题，采用直接跃迁型材料，因为直接带隙半导体材料在其禁带宽度附近吸收系数急剧增加，对能量大于禁带宽度的光子的吸收缓慢增加，此时，光吸收和电子空穴对的产生，大部分是在距表面2μm左右的极薄区域中发生。简言之，制造太阳电池时，用直接跃迁型材料，即使厚度很薄，也能充分的吸收太阳光，而用间接跃迁型材料，没有一定的厚度，就不能保证光的充分吸收。The utility model aims at the problem that the thickness of the indirect bandgap semiconductor is generally as thick as 20um, and the light absorption is not sufficient. The utility model adopts the direct transition type material, because the absorption coefficient of the direct bandgap semiconductor material increases sharply near its forbidden band width, and the energy The absorption of photons larger than the forbidden band width increases slowly. At this time, most of the light absorption and the generation of electron-hole pairs occur in the extremely thin region about 2 μm away from the surface. In short, when making solar cells, direct transition materials can fully absorb sunlight even if the thickness is very thin, while indirect transition materials cannot guarantee sufficient absorption of light without a certain thickness.
本实用新型针对常规太阳能电池一般由四层以上构成的问题，本实用新型自制吸收层，缓冲层，能够方便的制备出太阳能电池。The utility model aims at the problem that conventional solar cells are generally composed of more than four layers. The utility model makes an absorbing layer and a buffer layer by itself, and can conveniently prepare solar cells.
本实用新型针对传统缓冲层常用CdS材料的问题，选用In2S3作为缓冲层，一方面避开了毒性重金属离子元素Cd，同时由于In2S3与CuInS2含有相同的In和S，极大地减少了晶格失配及光生载流子的复合等问题，在提高电池的电压等性能方面具有优异效果。The utility model aims at the problem of CdS material commonly used in the traditional buffer layer, selects In 2 S 3 as the buffer layer, on the one hand avoids the toxic heavy metal ion element Cd, and at the same time, because In 2 S 3 and CuInS 2 contain the same In and S, it is extremely It greatly reduces the problems of lattice mismatch and recombination of photogenerated carriers, and has excellent effects in improving the performance of the battery such as voltage.
Claims (10)
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| CN104913456A (en) * | 2015-06-13 | 2015-09-16 | 周国范 | Air conditioning system |
| CN104921278A (en) * | 2015-06-26 | 2015-09-23 | 周磊 | High-fat food material treating equipment |
| CN104938342A (en) * | 2015-06-26 | 2015-09-30 | 周国文 | Hard cheese food forming device |
| CN104967171A (en) * | 2015-07-02 | 2015-10-07 | 诸暨市沃思环保技术有限公司 | charging station |
| CN104979893A (en) * | 2015-07-06 | 2015-10-14 | 衢州市沃思电子技术有限公司 | Standby power supply of electronic equipment |
| CN104986684A (en) * | 2015-07-31 | 2015-10-21 | 李赞芬 | Lift |
| CN105576061A (en) * | 2016-02-03 | 2016-05-11 | 武汉华尚绿能科技股份有限公司 | High-conductivity and high-voltage solar photoelectric glass plate |
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| CN104913456A (en) * | 2015-06-13 | 2015-09-16 | 周国范 | Air conditioning system |
| CN104921278A (en) * | 2015-06-26 | 2015-09-23 | 周磊 | High-fat food material treating equipment |
| CN104938342A (en) * | 2015-06-26 | 2015-09-30 | 周国文 | Hard cheese food forming device |
| CN104895724A (en) * | 2015-06-29 | 2015-09-09 | 周磊 | Circuit structure for starting system of internal combustion engine |
| CN104967171A (en) * | 2015-07-02 | 2015-10-07 | 诸暨市沃思环保技术有限公司 | charging station |
| CN104979893A (en) * | 2015-07-06 | 2015-10-14 | 衢州市沃思电子技术有限公司 | Standby power supply of electronic equipment |
| CN104986684A (en) * | 2015-07-31 | 2015-10-21 | 李赞芬 | Lift |
| CN105576061A (en) * | 2016-02-03 | 2016-05-11 | 武汉华尚绿能科技股份有限公司 | High-conductivity and high-voltage solar photoelectric glass plate |
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