CN102306678A - Thin film solar battery - Google Patents
Thin film solar battery Download PDFInfo
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- CN102306678A CN102306678A CN201110283633A CN201110283633A CN102306678A CN 102306678 A CN102306678 A CN 102306678A CN 201110283633 A CN201110283633 A CN 201110283633A CN 201110283633 A CN201110283633 A CN 201110283633A CN 102306678 A CN102306678 A CN 102306678A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a thin film solar battery which sequentially comprises ITO (indium tin oxide) conductive glass, a PZT (Lead Zirconate Titanate) thin film layer, an a-Si thin film layer and a metal electrode from top to bottom, wherein the PZT thin film layer is arranged on the conducting surface of the ITO conductive glass; the metal electrode and the a-Si thin film layer form ohmic contact; the conducting surface of the ITO conducting glass and the PZT thin film layer form a Schottky contact structure; and the metal electrode and the conducting surface of the ITO conducting glass form a positive-negative electrode structure of the solar battery. According to the invention, the structure of a-Si/PZT/ITO is obtained, the thin film solar battery has higher short-circuit current and photoelectric conversion efficiency, compared with the common thin film solar battery with the structure of PZT/ITO, the short-circuit current of the battery provided by the invention is improved by 30-130 times, and can reach 6.32mA/cm<2>, and the photoelectric conversion efficiency can be improved from 0.01% to 1.32%, and unimaginable effects are obtained.
Description
Technical field
The present invention relates to a kind of solar cell, be specifically related to a kind of thin-film solar cells.
Background technology
Solar energy source is human inexhaustible, nexhaustible regenerative resource, also is clean energy resource.Therefore, utilize solar energy to become the focus that people pay close attention to.
At present, the development and utilization of solar energy mainly is divided into heat energy utilization and light-use, and the solar energy utilization is meant through utilizing the mode such as sunlight heating water generates steam can in it to utilize; Light-use is meant and uses solar cell that conversion of solar energy is utilized as electric energy.Because of electric energy more is prone to store and carry, be that electric energy more helps the comprehensive utilization of people to solar energy with conversion of solar energy.Therefore, solar cell becomes the focus of various countries' research and development in nearly decades.
The traditional solid solar cell mainly contains: and crystalline silicon (monocrystalline and polycrystalline) solar cell, amorphous/microcrystalline silicon film solar cell and compound solar cell (GaAs, CIGS).These solid state solar cell are just having-negative pole connection---the connection between anodal semiconductor layer and the negative electricity sublayer.These context layers are keys of photovoltaic effect; When solar cell absorbed the photon from the sun, the energy of photon can produce electron-hole pair, and these electron-hole pairs are separated in exhausting the district; Just small just-negative attachment section, be collected as electric power then.Yet this process need photon penetrates the material of depletion region.Their energy also must accurately mate semi-conductive electronic energy band gap energy, and just the gap between semiconductor valence band and the conduction band does not have the existence of electronic state between conduction band and the valence band.The maximum voltage that the conventional solid-state photoelectric device can produce equals its electronics energy gap; Even so-called series connection cell---wherein have some semiconductors just-the negative accumulation that connects; Its photoelectricity voltage that can produce also is limited, because the degree of depth that light penetrates is limited.Semi-conductive photovoltaic effect is caused by macroheterogeneity, produces photovoltaic voltage and generally is no more than semi-conductive energy gap (being generally the three ten-day period of hot season).
On the other hand; Because ferroelectric material has and is different from semi-conductive unusual photovoltaic effect fully: evenly the phenomenon of steady-state short-circuit photogenerated current or open circuit voltage appears in ferroelectric crystal under even illumination; Photovoltaic voltage is not subjected to the restriction of crystal energy gap (Eg); High 2～4 one magnitude of comparable Eg reach 10
3～10
5V/cm.Is the character of electric energy just because of this of ferroelectric material above the output photovoltage of kilovolt with transform light energy, makes it have important application prospects in fields such as optical sensor, CD-ROM driver, ferroelectric photovoltaic cells.In addition, the photo-absorption region of ferroelectric material is whole material internal, and not only is confined to depletion region, has increased light absorption greatly, helps producing more electron-hole pair; The electron-hole pair that material internal produces can be separated by the depolarization field of ferroelectric material.
At present, in ferroelectric materials such as barium titanate, lithium niobate, lead titanates, bismuth iron-oxygen, found photovoltaic effect.Traditional ferroelectric thin film solar battery structure is metal electrode/ferroelectric thin film/metal electrode structure; Upper and lower two at ferroelectric thin film all exist metal/film Schottky barrier at the interface, and the direction of the internal electric field that this upper and lower interface Schottky barrier forms is always opposite, thereby causes Schottky barrier that the contribution of photoelectric current is reduced.
Document (performance study of PZT film on the ITO substrate, Jiangsu Petrochemical Engineering College journal, Vol.11No.3, P48～51) disclose a kind of on the ITO substrate structure of spin coating PZT film, the Pt substrate that instead is expensive is made the performance study of ferroelectric thin film.Yet,, can only absorb solar spectrum medium ultraviolet light, and the power of sunlight medium ultraviolet light only accounts for about 5% of whole solar spectrum because pzt thin film has bigger energy gap (about 3.5eV); And its conductive capability is relatively poor (under the normal temperature less than 20mA/cm
2), so its photoelectric conversion efficiency is lower usually, generally below 0.01%.
Summary of the invention
The object of the invention provides a kind of thin-film solar cells.
For achieving the above object, the technical scheme that the present invention adopts is: a kind of thin-film solar cells, comprise ITO electro-conductive glass, pzt thin film layer, a-Si thin layer and metal electrode from top to bottom successively, and said pzt thin film layer is located on the conducting surface of ITO electro-conductive glass;
Said metal electrode and a-Si thin layer form ohmic contact; The conducting surface of said ITO electro-conductive glass and pzt thin film layer constitute the Schottky contacts structure; The conducting surface of said metal electrode and ITO electro-conductive glass constitutes the positive and negative electrode structure of solar cell.
Above, said ITO electro-conductive glass is on the basis of sodium calcium base or silicon boryl substrate glass, utilize the method for magnetron sputtering to plate indium oxide layer tin (being commonly called as ITO) film and manufacture, and be prior art.
Said pzt thin film layer is meant the PZT thin film layer, and said PZT is dissolved in lead acetate, butyl titanate, tetrabutyl zirconate etc. in acetic acid and the EGME mixing by certain stoichiometric proportion, forms colloidal sol, utilizes the method for getting rid of film to be prepared from.The pzt thin film of gained has ferroelectric effect.
Another electrode that the conducting surface conduct of said ITO electro-conductive glass is relative with metal electrode, ITO contact with PZT and form Schottky barrier, and the direction of this internal electric field is pointed to the conducting surface of ITO electro-conductive glass by pzt thin film; The conducting surface of ITO electro-conductive glass allows light be irradiated into inside battery through electrode as electrode the time.Form ohmic contact between metal electrode and the a-Si.
Another electrode that the conducting surface conduct of said ITO electro-conductive glass is relative with metal electrode, it constitutes the positive and negative electrode structure of solar cell with metal electrode.
Said a-Si thin layer is meant the amorphous silicon membrane layer.
In the technique scheme, the thickness of said pzt thin film layer is 200～400nm.
In the technique scheme, the thickness of said a-Si thin layer is 200～500nm.
In the technique scheme, said a-Si thin layer is the n type.Certainly, the a-Si thin layer can be preferably the n type for n type, intrinsic-OR p type.
Design Mechanism of the present invention is: the energy gap of a-Si can absorb the visible light of solar spectrum medium wavelength less than 800nm at 1.7～1.85eV; And a-Si is as semi-conducting material, and its conductive capability is more much better than than ferroelectric thin film; The more important thing is that the a-Si of high carrier concentration and metal electrode can form ohmic contact.Therefore on pzt thin film, increase one deck a-Si film; Form the PZT/a-Si laminated film; Both can absorbing wavelength less than the visible light of 800nm; (the PZT/ITO interface is still for Schottky contacts can to eliminate the Schottky barrier at an interface again; The a-Si/Pt interface is an ohmic contact), thus the size of raising internal electric field.In addition, if the conduction type of a-Si is the n type, be consistent at the direction of an electric field of the direction of an electric field that forms heterojunction at the interface of PZT/a-Si and PZT/ITO interface Schottky barrier.
In sum, the present invention utilizes the a-Si film, sets about improving the efficient of ferroelectric thin film solar cell from two aspects: the one, and the internal electric field that enhancement film is inner; The 2nd, increase light absorption, improve the utilization ratio of sunlight.
Because the technique scheme utilization, the present invention compared with prior art has advantage:
1. the present invention is provided with the a-Si thin layer on the pzt thin film layer; Constituted the structure of a-Si/PZT/ITO; The thin-film solar cells of this structure has higher short circuit current and photoelectric conversion efficiency; Compare the thin-film solar cells of common PZT/ITO structure; The short circuit current of battery of the present invention has improved 30～130 times, can reach 6.32mA/cm
2, photoelectric conversion efficiency can bring up to 1.32% by 0.01%, has obtained beyond thought effect.
2. the a-Si thin layer of the present invention's employing can when a-Si is intrinsic, can be brought up to 1.06V to open circuit voltage for n type, intrinsic-OR p type, has improved 2 times nearly.
3. battery structure of the present invention is simple, is easy to preparation, is suitable for applying.
4. the a-Si thin layer of the present invention's employing can adopt existing product, and is cheap and easy to get, and has photoelectric conversion efficiency preferably by the solar cell that it makes, thereby is easier to realize industrial applications.
5. solar cell of the present invention has good stable property, no matter adopts n type, intrinsic-OR p type a-Si thin layer, all can obtain the solar cell of high light photoelectric transformation efficiency.
Description of drawings
Accompanying drawing 1 is the structural representation of the embodiment of the invention one;
Accompanying drawing 2 is quantum efficiency comparison diagrams of solar cell in the embodiment of the invention one and the Comparative Examples one.
Wherein: 1, pzt thin film layer; 2, a-Si thin layer; 3, metal electrode; 4, conducting surface; 5, ITO electro-conductive glass.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one
Shown in accompanying drawing 1, at the deposition on glass ito thin film, constitute the ITO electro-conductive glass, its light transmittance is greater than 85%, and sheet resistance is about 90 Ω/, forms the electroconductive ITO/glass of conductive, transparent; On ITO/glass,,, form the polycrystalline pzt thin film through the annealing down of 580 ℃ of oxygen with the thick pzt thin film of sol-gel method deposition 320nm; Then, with the a-Si of magnetron sputtering deposition n type, thickness is 450nm on PZT/ITO/glass, and carrier concentration is for being about 10
17Cm-3 forms the a-Si/PZT/ITO/glass structure.
Then with magnetron sputtering depositing metal electrode Pt on the PZT/ITO/glass, promptly form thin-film solar cells.
Embodiment two
At the deposition on glass ito thin film, light transmittance is greater than 85%, and sheet resistance is about 90 Ω/, forms the electroconductive ITO/glass of conductive, transparent; With the thick pzt thin film of sol-gel method deposition 320nm,, form the polycrystalline pzt thin film at ITO/glass through the annealing down of 580 oxygen; Then on PZT/ITO/glass with the a-Si of magnetron sputtering deposition intrinsic, thickness is 450nm, formation a-Si/PZT/ITO/glass structure.
On a-Si/ITO/glass, deposit top electrode Pt with magnetron sputtering then, promptly form solar cell.
Embodiment three
At the deposition on glass ito thin film, light transmittance is greater than 85%, and sheet resistance is about 90 Ω/, forms the electroconductive ITO/glass of conductive, transparent; With the thick pzt thin film of sol-gel method deposition 320nm,, form the polycrystalline pzt thin film at ITO/glass through the annealing down of 580 ℃ of oxygen; Then on PZT/ITO/glass with the a-Si of magnetron sputtering deposition p type, thickness is 450nm, carrier concentration is for being about 10
17Em
-3,, form the a-Si/PZT/ITO/glass structure.
On a-Si/ITO/glass, deposit top electrode Pt with magnetron sputtering then, promptly form solar cell.
Comparative Examples one
At deposition on glass ito thin film (ITO/glass), light transmittance is greater than 85%, and sheet resistance is about 90 Ω/, forms the electroconductive ITO/glass of conductive, transparent; With the thick pzt thin film of sol-gel method deposition 320nm,, form polycrystalline pzt thin film (it is generally acknowledged that the polycrystalline pzt thin film has p type or n N-type semiconductor N characteristic) at ITO/glass through the annealing down of 580 ℃ of oxygen.
Then with magnetron sputtering depositing metal electrode Pt on the PZT/ITO/glass, promptly form solar cell.
Test one
At AM 1.5, under 25 ℃ of conditions of temperature, light is irradiated into battery from the ITO electro-conductive glass, the unit for electrical property parameters of the solar cell of test implementation example one to three and Comparative Examples one, and the result is as shown in the table:
Visible by last table, to compare with Comparative Examples one, thin-film solar cells of the present invention has higher short circuit current, and short circuit current has improved 30～130 times, and the short circuit current of embodiment one can reach 6.32mA/cm
2, obtained beyond thought effect; The open circuit voltage of solar cell of the present invention and short circuit current have all been obtained tangible improvement; The conversion efficiency of solar cell has been brought up to about 1.32% by 0.01%.
Test two
The quantum efficiency of test the foregoing description one and the solar cell of Comparative Examples one, result as shown in Figure 2, can be known by figure: the quantum efficiency of embodiment one compares ratio one, and absorption bands expands to 300～430nm by 330 original～390nm; Brought up to 45% in the 350nm quantum efficiency by original 3%.
Claims (4)
1. thin-film solar cells, it is characterized in that: comprise ITO electro-conductive glass (5), pzt thin film layer (1), a-Si thin layer (2) and metal electrode (3) from top to bottom successively, said pzt thin film layer is located on the conducting surface (4) of ITO electro-conductive glass;
Said metal electrode and a-Si thin layer form ohmic contact; The conducting surface of said ITO electro-conductive glass and pzt thin film layer constitute the Schottky contacts structure; The conducting surface of said metal electrode and ITO electro-conductive glass constitutes the positive and negative electrode structure of solar cell.
2. thin-film solar cells according to claim 1 is characterized in that: the thickness of said pzt thin film layer is 200 ~ 400 nm.
3. thin-film solar cells according to claim 1 is characterized in that: the thickness of said a-Si thin layer is 200 ~ 500 nm.
4. thin-film solar cells according to claim 1 is characterized in that: said a-Si thin layer is the n type.
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|---|---|---|---|
| CN201110283633A CN102306678A (en) | 2011-09-22 | 2011-09-22 | Thin film solar battery |
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|---|---|---|---|
| CN201110283633A CN102306678A (en) | 2011-09-22 | 2011-09-22 | Thin film solar battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835880A (en) * | 2015-05-29 | 2015-08-12 | 常熟苏大低碳应用技术研究院有限公司 | Application of Cr3+ doped PZT film in preparation of ferroelectric film solar cell |
| CN106972064A (en) * | 2017-01-26 | 2017-07-21 | 电子科技大学 | Complex thin film structure photovoltaic device and preparation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244111A (en) * | 2011-06-27 | 2011-11-16 | 苏州大学 | Thin film solar cell |
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2011
- 2011-09-22 CN CN201110283633A patent/CN102306678A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244111A (en) * | 2011-06-27 | 2011-11-16 | 苏州大学 | Thin film solar cell |
Non-Patent Citations (3)
| Title |
|---|
| A.FUKUYAMA,ET.AL: "Piezoelectric photothermal study of the optical properties of microcrystalline silicon near the bandgap", 《THIN SOLID FILMS》 * |
| A.L.KHOLKIN,ET.AL: "Metal-ferroelectric thin film devices", 《JOURNAL OF NON-CRYSTALLINE SOLIDS》 * |
| M.A.AEGERTER: "Ferroelectric thin coatings", 《JOURNAL OF NON-CRYSTALLINE SOLIDS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835880A (en) * | 2015-05-29 | 2015-08-12 | 常熟苏大低碳应用技术研究院有限公司 | Application of Cr3+ doped PZT film in preparation of ferroelectric film solar cell |
| CN106972064A (en) * | 2017-01-26 | 2017-07-21 | 电子科技大学 | Complex thin film structure photovoltaic device and preparation method |
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Application publication date: 20120104 |