CN108735828A - Heterojunction back contact solar cell and preparation method thereof - Google Patents
Heterojunction back contact solar cell and preparation method thereof Download PDFInfo
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- CN108735828A CN108735828A CN201810705914.6A CN201810705914A CN108735828A CN 108735828 A CN108735828 A CN 108735828A CN 201810705914 A CN201810705914 A CN 201810705914A CN 108735828 A CN108735828 A CN 108735828A
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- 238000002360 preparation method Methods 0.000 title claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 40
- 239000010409 thin film Substances 0.000 abstract description 17
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000019592 roughness Nutrition 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a heterojunction back contact solar cell, which comprises an N-type crystalline silicon substrate, wherein a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer and an electrode layer are sequentially arranged on the backlight surface of the N-type crystalline silicon substrate, the first doped amorphous silicon layer comprises N-type doped regions and P-type doped regions which are arranged in a staggered mode, a transparent conductive thin film layer is arranged between the electrode layer and the first doped amorphous silicon layer and comprises a first thin film layer and a second thin film layer which are sequentially arranged on the first doped amorphous silicon layer, the work function of the first thin film layer is larger than that of the second thin film layer, and the work function of the first thin film layer is not smaller than 5 eV. The invention solves the problem that the work function of the TCO film layer of the existing heterojunction back contact solar cell is small, so that the current loss is caused.
Description
Technical field
The present invention relates to technical field of solar batteries more particularly to a kind of hetero-junctions back contact solar cell and its systems
Preparation Method.
Background technology
In the hetero-junctions back contact solar cell structure announced at present, in order to realize the collection and export of electric current, realize
Amorphous silicon layer and the good Ohmic contact of metal electrode deposit the TCO that a layer thickness is about 100nm or so in cell backside
(transparency conducting layer：Transparent Conductive Oxide) film.TCO thin film is by ITO (indium tin oxides：Indium
Tin Oxide) constitute, but the work function of ITO (4.5eV) be less than p-type and N-type non-crystalline silicon work function (>5eV), it therefore makes
At the loss of electric current, it is unfavorable for improving the energy conversion efficiency of solar cell.
In addition, when preparing ITO crystallizations, the deposition that ITO is carried out at the temperature more than 150 DEG C or more is needed.Although in this way
Obtain preferable film photoelectric property, but ITO crystallization process can increase ITO layer surface roughness (>2.5nm), simultaneously
The high temperature manufacturing process of TCO thin film is easy to cause to damage to amorphous silicon film layer.
Invention content
In view of the shortcomings of the prior art, the present invention provides a kind of hetero-junctions back contact solar cell and its preparations
Method, to solve the problem of the relatively low high temperature pair for leading to current loss and TCO thin film preparation process of the work function of ito thin film
Amorphous silicon film layer causes the problem of damage.
To achieve the above object, present invention employs the following technical solutions：
A kind of hetero-junctions back contact solar cell, including N-type crystalline silicon substrate, on the shady face of the N-type crystalline silicon substrate
It is disposed with the first intrinsic amorphous silicon layer, the first doped amorphous silicon layer and electrode layer, first doped amorphous silicon layer includes
Staggered N-doped zone and P-doped zone, wherein be equipped between the electrode layer and first doped amorphous silicon layer
Transparent conductive film layer, the transparent conductive film layer include be successively set on first doped amorphous silicon layer it is first thin
Film layer and the second film layer, the work function of the first film layer are more than the work function of second film layer, and described first is thin
The work function of film layer is not less than 5eV.
Preferably, the work function of the first film layer is 5eV~6eV.
Preferably, the material of the first film layer is IZTO, and the material of second film layer is ITO.
Preferably, the thickness of the first film layer is 80~120nm.
Preferably, second thin film layer thickness is 20~50nm.
Preferably, the electrode layer includes negative electrode and positive electrode, and the negative electrode is electrically connected to the n-type doping
Area, the positive electrode are electrically connected to the P-doped zone.
Preferably, the solar cell further includes second be successively set on the light-receiving surface of the N-type crystalline silicon substrate
Intrinsic amorphous silicon layer, the second doped amorphous silicon layer and antireflection layer.
The present invention also provides the preparation methods of hetero-junctions back contact solar cell as described above, wherein including step
Suddenly：
S1, a N-type crystalline silicon substrate is provided, prepares to form the respectively in the shady face and light-receiving surface of the N-type crystalline silicon substrate
One intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer；
S2, the first doped amorphous silicon layer of formation is prepared in first intrinsic amorphous silicon layer；
S3, the second doped amorphous silicon layer of formation is prepared in second intrinsic amorphous silicon layer；
S4, preparation forms antireflection layer on second doped amorphous silicon layer；
S5, preparation forms transparent conductive film layer on first doped amorphous silicon layer；
S6, preparation forms electrode layer in the transparent conductive film layer.
Preferably, the step S5 is specifically included：
S51, it using low temperature PVD technique prepares to form the first film layer on first doped amorphous silicon layer；
S52, it using PVD process prepares to form the second film layer on the first film layer.
Preferably, the step S2 is specifically included：
S21, patterned P-doped zone is formed in first intrinsic amorphous silicon layer；
S22, the P-doped zone is patterned and is blocked；
S23, patterned N-doped zone is formed in first intrinsic amorphous silicon layer.
Compared with prior art, invention increases the work functions of TCO thin film layer, improve the transfer efficiency of solar energy.
Further, IZTO films can pass through low temperature PVD (technological temperature in the present invention：<100 DEG C) technique is deposited, therefore is reduced
The high temperature generated when depositing TCO films is damaged caused by amorphous silicon film layer and the roughness on the surfaces ITO.
Description of the drawings
Fig. 1 is the structural schematic diagram of hetero-junctions back contact solar cell provided by the invention；
Fig. 2 is the preparation flow figure of hetero-junctions back contact solar cell provided by the invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to
The embodiments of the present invention of attached drawing description are only exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
It shows the structure and/or processing step closely related with scheme according to the present invention, and is omitted little with relationship of the present invention
Other details.
The present invention provides a kind of hetero-junctions back contact solar cells, as shown in Figure 1, the hetero-junctions back contacts sun
Can electricity include N-type crystalline silicon substrate 1, the first intrinsic amorphous silicon layer 2, the are disposed on the shady face of the N-type crystalline silicon substrate 1
One doped amorphous silicon layer 3 and electrode layer 4.Wherein, the N-type crystalline silicon substrate 1 has good photovoltaic property as photosensitive layer, main
It to be made of monocrystalline silicon or polysilicon.First intrinsic amorphous silicon layer 2 is used as surface passivation layer, alleviates the N-type crystal silicon
The hole-electron on 1 surface of substrate is compound, improves the production exciton efficiency of the N-type crystalline silicon substrate 1.
First doped amorphous silicon layer 3, including staggered N-doped zone 31 and P-doped zone 32, the N-type
Doped region 31 and the P-doped zone 32 are staggered, and the P-doped zone 32 collects photohole, the N-doped zone 31
Collect light induced electron.First doped amorphous silicon layer 3 is electrically connected with the electrode layer 4.Specifically, the electrode layer 4 wraps
Negative electrode 41 and positive electrode 42 are included, the negative electrode 41 is electrically connected at the N-doped zone 31, and the positive electrode 42 electrically connects
It is connected to the P-doped zone 32.Wherein, it is thin that electrically conducting transparent is equipped between first doped amorphous silicon layer 3 and the electrode layer 4
Film layer 5, the transparent conductive film layer 5 include the first film layer 51 being successively set on first doped amorphous silicon layer 3
With the second film layer 52.The first film layer 51 is mainly by IZTO (indium oxide In2O3, zinc oxide ZnO, tin oxide SnO2It is mixed
Close object) it constitutes, low temperature PVD (physical vapour deposition (PVD) may be used in IZTO：Physical Vapor Deposition) mode
(technological temperature：<100 DEG C) prepare amorphous or the film of nanocrystalline structures.The work function for the IZTO layers being achieved in that is not
Less than 5eV, light transmittance rate reaches 85%, and resistivity is 10-3~10-4The range of Ω .cm, surface roughness can reach 0.5nm,
Conductive characteristic is similar to ITO.
Second film layer 52 is mainly made of ITO, though the work function of ITO is less than IZTO, conductivity and light transmission
Rate is better than IZTO.With this, combines the described of the first film layer 51 and 52 double-layer structure of the second film layer and transparent lead
Thin film layer 5 is provided with the characteristic of low surface roughness, low areal resistance, high work function.Low surface roughness characteristic is promoted as a result,
The absorptivity of solar cell, generates more photo-generated carriers, the characteristic of high work function prevents the loss of electric current, carries
High photoelectric conversion rate.
Further, hetero-junctions back contact solar cell provided by the invention further includes being successively set on the N-type crystal silicon
The second intrinsic amorphous silicon layer 6, the second doped amorphous silicon layer 7 on the light-receiving surface of substrate 1 and antireflection layer 8.Wherein, described second
Doped amorphous silicon layer 7 is p-doped hydrogenated amorphous silicon layer, the antireflection layer 8 arranged successively, second doped amorphous silicon layer
7, second intrinsic amorphous silicon layer 6, the N-type crystalline silicon substrate 1, first intrinsic amorphous silicon layer 2 and described first are mixed
The P-doped zone 32 of miscellaneous amorphous silicon layer 3 forms heterojunction photovoltaic part, improves photoelectric conversion rate.
The present invention also provides the preparation methods of hetero-junctions back contact solar cell as described above, as shown in Fig. 2, should
Method includes step：
S1, a N-type crystalline silicon substrate 1 is provided, prepares to be formed respectively in the shady face and light-receiving surface of the N-type crystalline silicon substrate 1
First intrinsic amorphous silicon layer 2 and second intrinsic amorphous silicon layer 6.Specifically, the N-type crystalline silicon substrate 1 is by monocrystalline silicon
Piece is constituted, and first intrinsic amorphous silicon layer 2 and second intrinsic amorphous silicon layer 6 use PECVD (plasma enhanced chemicals
Vapour deposition process：Plasma Enhanced Chemical Vapor Deposition) technique is respectively in the N-type crystal silicon
It prepares and is formed on the shady face and light-receiving surface of substrate 1.
S2, the first doped amorphous silicon layer 3 of formation is prepared in first intrinsic amorphous silicon layer 2.Specifically, the step
S2 includes：
S21, it is patterned and is blocked in first intrinsic amorphous silicon layer 2 using hard mask plate, pass through pecvd process
One layer of boron mixing non-crystal silicon is deposited, the patterned P-doped zone 32 is formed.
S22, using the hard mask plate with 32 same shape of the P-doped zone, the P-doped zone 32 is hidden
Gear.
S23, in first intrinsic amorphous silicon layer 2 that do not block by pecvd process deposit one layer of phosphorus-doped amorphous silicon,
Form the patterned N-doped zone 31.
S3, pass through pecvd process one layer of P-doped a-Si: H thin films layer of deposition, shape in second intrinsic amorphous silicon layer 6
At the second doped amorphous silicon layer 7 of 5~10nm thickness.
S4, pass through pecvd process one layer of silicon nitride layer of deposition, formation antireflective on second doped amorphous silicon layer 7
Layer 8.
S5, preparation forms the transparent conductive film layer 5 on first doped amorphous silicon layer 3.Specifically, the step
Suddenly S5 includes：
S51, using low temperature PVD technique, 4 × 10-3~5 × 10-3It, will using direct current pulse power source under the air pressure of torr
High-purity IZTO targets sputter is on first doped amorphous silicon layer 3.Wherein, deposition rate is 5~8nm/min, and temperature needs
Control at 80~85 DEG C, when depositing to 80~120nm thickness, stop deposit simultaneously is made annealing treatment, annealing temperature be 180~
200 DEG C, anneal duration is 30~35min, forms the first film layer 51, the work function of the first film layer 51 is 5~
6eV。
S52, using PVD process, 4 × 10-3~5 × 10-3It, will be high-purity using direct current pulse power source under the air pressure of torr
ITO target sputter is on the first film layer 51.Wherein, deposition rate is 5~8nm/min, deposits to 20~50nm thickness
When, stop depositing and simultaneously made annealing treatment, annealing temperature is 180~200 DEG C, and anneal duration is 30~35min, forms described the
Two film layers 52.
S6, in the transparent conductive film layer 5, the electrode layer 4 is formed using silk-screen printing technique.Specifically, institute
It states negative electrode 41 and is electrically connected at the N-doped zone 31, the positive electrode 42 is electrically connected at the P-doped zone
32。
Hetero-junctions back contact solar cell provided by the invention, increases the work function of TCO thin film, solves solar energy
The relatively low problem of transfer efficiency.Further, IZTO films are deposited by low temperature PVD technique, solve sputter with this
The problem of high temperature generated when TCO thin film causes to damage to amorphous silicon film layer and ITO surface roughnesses increase.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (10)
1. a kind of hetero-junctions back contact solar cell, including N-type crystalline silicon substrate (1), the backlight of the N-type crystalline silicon substrate (1)
The first intrinsic amorphous silicon layer (2), the first doped amorphous silicon layer (3) and electrode layer (4), first doping are disposed on face
Amorphous silicon layer (3) includes staggered N-doped zone (31) and P-doped zone (32), which is characterized in that the electrode layer
(4) transparent conductive film layer (5), transparent conductive film layer (5) packet are equipped between first doped amorphous silicon layer (3)
Include the first film layer (51) being successively set on first doped amorphous silicon layer (3) and the second film layer (52), described
The work function of one film layer (51) is more than the work function of second film layer (52), the work function of the first film layer (51)
Not less than 5eV.
2. hetero-junctions back contact solar cell according to claim 1, which is characterized in that the first film layer (51)
Work function be 5eV~6eV.
3. hetero-junctions back contact solar cell according to claim 2, which is characterized in that the first film layer (51)
Material be IZTO, the material of second film layer (52) is ITO.
4. hetero-junctions back contact solar cell according to claim 3, which is characterized in that the first film layer (51)
Thickness be 80~120nm.
5. hetero-junctions back contact solar cell according to claim 3, which is characterized in that second film layer (52)
Thickness is 20~50nm.
6. hetero-junctions back contact solar cell according to claim 1, which is characterized in that the electrode layer (4) includes
Negative electrode (41) and positive electrode (42), the negative electrode (41) are electrically connected to the N-doped zone (31), the positive electrode
(42) it is electrically connected to the P-doped zone (32).
7. according to any hetero-junctions back contact solar cells of claim 1-6, which is characterized in that the solar-electricity
Pond further includes the second intrinsic amorphous silicon layer (6) being successively set on the light-receiving surface of the N-type crystalline silicon substrate (1), the second doping
Amorphous silicon layer (7) and antireflection layer (8).
8. a kind of preparation method of hetero-junctions back contact solar cell as described in claim 1-7 is any, which is characterized in that
Including step：
S1, a N-type crystalline silicon substrate (1) is provided, prepares to be formed respectively in the shady face and light-receiving surface of the N-type crystalline silicon substrate (1)
First intrinsic amorphous silicon layer (2) and the second intrinsic amorphous silicon layer (6)；
S2, the first doped amorphous silicon layer of formation (3) is prepared on first intrinsic amorphous silicon layer (2)；
S3, the second doped amorphous silicon layer of formation (7) is prepared on second intrinsic amorphous silicon layer (6)；
S4, preparation forms antireflection layer (8) on second doped amorphous silicon layer (7)；
S5, preparation forms transparent conductive film layer (5) on first doped amorphous silicon layer (3)；
S6, preparation forms electrode layer (4) in the transparent conductive film layer (5).
9. the preparation method of hetero-junctions back contact solar cell according to claim 8, which is characterized in that the step
S5 is specifically included：
S51, it using low temperature PVD technique prepares to form the first film layer (51) on first doped amorphous silicon layer (3)；
S52, it prepares to form the second film layer (52) using PVD process on the first film layer (51).
10. the preparation method of hetero-junctions back contact solar cell according to claim 8, which is characterized in that the step
Rapid S2 is specifically included：
S21, patterned P-doped zone (32) is formed on first intrinsic amorphous silicon layer (2)；
S22, the P-doped zone (32) is patterned and is blocked；
S23, patterned N-doped zone (31) is formed on first intrinsic amorphous silicon layer (2).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920873A (en) * | 2019-04-11 | 2019-06-21 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of total bypass protection crystalline silicon solar cell modules |
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| CN109920873A (en) * | 2019-04-11 | 2019-06-21 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of total bypass protection crystalline silicon solar cell modules |
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| CN116364332A (en) * | 2021-12-22 | 2023-06-30 | 嘉兴阿特斯技术研究院有限公司 | Transparent conductive film precursor solution/slurry, and preparation method and application thereof |
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