CN113451445A - Solar cell and manufacturing method thereof - Google Patents

Solar cell and manufacturing method thereof Download PDF

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Publication number
CN113451445A
CN113451445A CN202110024415.2A CN202110024415A CN113451445A CN 113451445 A CN113451445 A CN 113451445A CN 202110024415 A CN202110024415 A CN 202110024415A CN 113451445 A CN113451445 A CN 113451445A
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amorphous silicon
silicon layer
doped amorphous
annealing
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不公告发明人
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Xuancheng Ruihui Xuansheng Enterprise Management Center Partnership LP
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Xuancheng Ruihui Xuansheng Enterprise Management Center Partnership LP
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Abstract

The invention discloses a solar cell and a manufacturing method thereof, wherein the manufacturing method of the solar cell adopts the steps that a first doping type amorphous silicon layer is formed on the surface of a first intrinsic amorphous silicon layer and then is annealed; and/or, after a second doped amorphous silicon layer is formed on the surface of the second intrinsic amorphous silicon layer, annealing the second doped amorphous silicon layer, so that a microcrystalline or polycrystalline structure is formed on the first doped amorphous silicon layer and/or the second doped amorphous silicon layer, hydrogen atoms can be effectively stabilized on the intrinsic amorphous silicon layer, and the efficiency of the cell is improved; on the other hand, the doped amorphous silicon layer is directly annealed after being formed, and the annealing condition is better controlled.

Description

Solar cell and manufacturing method thereof
Technical Field
The invention relates to the field of solar cells, in particular to a solar cell and a manufacturing method thereof.
Background
In the traditional solar cell, the intrinsic amorphous silicon layer and the doped amorphous silicon layer on the front surface are high parasitic absorption layers for solar energy electricityThe current influence in the cell is as high as 2-3mA/cm2The current density of the silicon cell is 38mA/cm2In other words, the cell efficiency loss caused by parasitic absorption of the intrinsic amorphous silicon layer and the doped amorphous silicon layer is 8% of the relative efficiency, and 2% of the absolute value efficiency, how to reduce the absorption of the parasitic current is always a pain point of the solar cell, and how to reduce the parasitic absorption by replacing different amorphous material layers is always an important topic. The improvement of the preparation process of the solar cell reduces parasitic absorption, thereby improving the efficiency of the solar cell, and is a new research direction.
Disclosure of Invention
The invention mainly aims to provide a solar cell manufacturing method, and aims to solve the problem that the efficiency of a solar cell is reduced because hydrogen atoms of an intrinsic amorphous silicon layer lose passivation capability after being dissipated after the solar cell is annealed at high temperature in the process of manufacturing the solar cell at present.
In order to achieve the above object, the present invention provides a method for manufacturing a solar cell, comprising:
providing a monocrystalline silicon wafer;
forming a first intrinsic amorphous silicon layer on the front surface of the monocrystalline silicon wafer;
forming a first doped amorphous silicon layer on the surface of the first intrinsic amorphous silicon layer;
forming a second intrinsic amorphous silicon layer on the reverse side of the monocrystalline silicon wafer;
forming a second doped amorphous silicon layer on the surface of the second intrinsic amorphous silicon layer;
forming light-transmitting conductive films on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer respectively;
performing screen printing on the surfaces of the two light-transmitting conductive films to form electrodes;
after a first doped amorphous silicon layer is formed on the surface of the first intrinsic amorphous silicon layer, annealing the first doped amorphous silicon layer to form a microcrystalline or polycrystalline structure on the first doped amorphous silicon layer;
and/or the presence of a gas in the gas,
and after a second doped amorphous silicon layer is formed on the surface of the second intrinsic amorphous silicon layer, annealing the second doped amorphous silicon layer to form a microcrystalline or polycrystalline structure on the second doped amorphous silicon layer.
Preferably, laser annealing is adopted when the first doped amorphous silicon layer or the second doped amorphous silicon layer is annealed, the wavelength of the adopted laser is 300nm to 1200nm, and the irradiation time is 1 nanosecond to 1 minute.
Preferably, when laser annealing is adopted, at least one laser irradiation is performed on the first doped amorphous silicon layer or the second doped amorphous silicon layer.
Preferably, when the first doped amorphous silicon layer or the second doped amorphous silicon layer is annealed, high-temperature heating annealing is adopted, the heating temperature is between 100 ℃ and 700 ℃, and the heating time is maintained between 1 nanosecond and 1 minute.
Preferably, when the high-temperature heating annealing is adopted, the first doping type amorphous silicon layer or the second doping type amorphous silicon layer is heated at least once.
Preferably, the solar cell manufacturing method further includes: and cleaning the first doped amorphous silicon layer and/or the second doped amorphous silicon layer after annealing.
Preferably, the cleaning uses hydrofluoric acid as a cleaning liquid.
Preferably, after forming a light-transmitting conductive film on the surfaces of the first and second doped amorphous silicon layers, a silicon nitride layer is formed on the light-transmitting conductive film.
Preferably, the solar cell manufacturing method further comprises performing light injection annealing treatment after forming the electrode by screen printing.
The invention also provides a solar cell which is manufactured by adopting any one of the above solar cell manufacturing methods.
The technical scheme of the invention is that after a first doping type amorphous silicon layer is formed on the surface of a first intrinsic amorphous silicon layer of a solar cell, the first doping type amorphous silicon layer is annealed, or after a second doping type amorphous silicon layer is formed on the surface of a second intrinsic amorphous silicon layer, the second doping type amorphous silicon layer is annealed, or after a first doping type amorphous silicon layer is formed on the surface of the first intrinsic amorphous silicon layer and a second doping type amorphous silicon layer is formed on the surface of the second intrinsic amorphous silicon layer, the second doping type amorphous silicon layer is annealed, the annealing enables the doping type amorphous silicon layer positioned on the outer layer to form a microcrystalline structure or a polycrystalline structure, the intrinsic amorphous silicon layer positioned on the inner layer continuously keeps all amorphous or partial amorphous structures, so that the microcrystalline structure or the polycrystalline structure can play a role of blocking hydrogen atoms and effectively stabilize the hydrogen atoms on the intrinsic amorphous silicon layer, the hydrogen atom scattering phenomenon is reduced, and the battery efficiency is improved; the intrinsic amorphous silicon layer at the inner layer continuously keeps the whole amorphous or partial amorphous structure, thereby playing the effects of passivation and increasing the open voltage of the battery; according to the technical scheme, the doped amorphous silicon layer is directly annealed after being formed, and the annealing condition is better controlled.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a process diagram of a method for fabricating a solar cell according to an embodiment of the present invention;
FIG. 2 is a process diagram of another embodiment of a method for fabricating a solar cell according to the present invention;
FIG. 3 is a process diagram of another embodiment of a method for fabricating a solar cell according to the present invention;
fig. 4 is a schematic structural diagram of a solar cell according to an embodiment of the invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a solar cell manufacturing method.
In the embodiment of the present invention, as shown in fig. 1, the method for manufacturing a solar cell includes the following steps:
s100: a single crystal silicon wafer is provided.
S200: and forming a first intrinsic amorphous silicon layer on the front surface of the monocrystalline silicon wafer.
S300: and forming a first doping type amorphous silicon layer on the surface of the first intrinsic amorphous silicon layer.
S400: and annealing the first doping type amorphous silicon layer.
S410: and cleaning the annealed first doped amorphous silicon layer.
S500: and forming a second intrinsic amorphous silicon layer on the reverse side of the monocrystalline silicon wafer.
S600: and forming a second doped amorphous silicon layer on the surface of the second intrinsic amorphous silicon layer.
S700: and forming a light-transmitting conductive film on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer.
S800: and screen printing is carried out on the surfaces of the two light-transmitting conductive films to form electrodes.
Specifically, as shown in fig. 4, in the preparation process of the solar cell:
in step S100, a single crystal silicon wafer is provided, which may be an N-type single crystal silicon wafer or a P-type single crystal silicon wafer, and the type of the single crystal silicon wafer is not limited in this technical scheme, in this embodiment, the N-type single crystal silicon wafer is taken as an example, after the N-type single crystal silicon wafer is obtained, the surface of the N-type single crystal silicon wafer is cleaned and subjected to texturing, and then a first intrinsic amorphous silicon layer is formed on the front surface of the N-type single crystal silicon wafer through Plasma Enhanced Chemical Vapor Deposition (PECVD) or Hot Wire Chemical Vapor Deposition (HWCVD), where the first intrinsic amorphous silicon layer is: the i-a-Si: H is usually deposited by PECVD, the frequency of the RF source is usually 13.56MHz, or very high frequency is used, and when depositing the i-a-Si: H, the H is usually used2The diluted SiH4 is used as a precursor, the deposition temperature is about 200 ℃, the deposition pressure is selected from dozens of pascals to hundreds of pascals, and the diluted SiH4 can play a good passivation role on the surface of crystalline silicon, reduce the surface defect state and reduce the surface recombination of a current carrier.
In step 300, a first doped amorphous silicon layer is formed on the surface of the first intrinsic amorphous silicon layer. Specifically, in step 200, a first intrinsic amorphous silicon layer has been formed, and in this step, a doping gas borane (B2H6) or Trimethylboron (TMB) is introduced into the first intrinsic amorphous silicon layer, so that an N-type doped amorphous silicon layer, i.e., a first doped amorphous silicon layer, having a function of collecting and guiding carriers is formed on the surface of the first intrinsic amorphous silicon layer; usually, the doping gas will use a large amount of H2Dilution of。
In the step 400, annealing the first doped amorphous silicon layer, wherein the annealing can be laser annealing or high-temperature annealing, and when the laser annealing is adopted, laser with the wavelength of 300-1200nm is adopted to irradiate the first doped amorphous silicon layer, the irradiation time is 1 nanosecond-1 minute, only one irradiation can be carried out, and the irradiation can be repeated for multiple times; if a high-temperature annealing mode is adopted, the first doped amorphous silicon layer is heated to 100-700 ℃, the heating time is maintained within 1 nanosecond to 1 minute, and the first doped amorphous silicon layer can be heated only once or repeatedly heated for multiple times; after the first doping type amorphous silicon is annealed, the amorphous structure is crystallized into a microcrystal or polycrystal structure, and at the moment, the first intrinsic amorphous silicon layer positioned in the inner layer continuously keeps the amorphous structure or part of the amorphous structure; and then, step 410 is carried out to clean the surface of the first doped amorphous silicon layer, and the cleaning adopts hydrofluoric acid water solution, so that silicon nitride impurities of the first doped amorphous silicon layer can be effectively removed.
The parameters of the microcrystalline structure formed after the annealing of the first doped amorphous silicon layer are as follows, and as can be seen from the parameters, the annealed first doped amorphous silicon layer has a microcrystalline structure, so that hydrogen atoms can be stabilized in the first intrinsic amorphous silicon layer, and the hydrogen atoms are prevented from overflowing; but also the adsorption capacity of parasitic currents is significantly reduced.
Figure BDA0002889877680000051
Further, step 500 forms a second intrinsic amorphous silicon layer on the opposite side of the single crystal silicon wafer, the second intrinsic amorphous silicon layer being i-a-Si: H, and also having a passivation effect on the surface of the crystalline silicon.
In step 600, a second doped amorphous silicon layer is formed on the surface of the second intrinsic amorphous silicon layer, the specific process is the same as that in step 300, and the doping gas is replaced by Phosphine (PH)3) That is, a P-type doped amorphous silicon layer, i.e., a second doped amorphous silicon layer, also doped with a source Phosphine (PH), is formed on the second intrinsic amorphous silicon layer3) Usually large amounts of H will be used2The mixture is diluted and then is subjected to a dilution treatment,the formed P-type doped amorphous silicon layer has the functions of establishing an electric field, collecting carriers and leading the carriers out.
In step 700, transparent conductive films are formed on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer, respectively. Preferably, the TCO film, i.e., the transparent conductive film, is prepared on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer by a physical deposition method or a chemical deposition method, and the common TCO material includes SnO2System, In2O3System and ZnO2System, tin doped In2O3(ITO) is the most commonly used TCO material, and other metals can be used to dope In2O3The aluminum-doped ZnO (AZO) is more economical, the method most commonly used for depositing the TCO film is magnetron sputtering, the magnetron sputtering is a vacuum Physical Vapor Deposition (PVD) technology, the PN junction of the amorphous/crystalline silicon heterojunction cell is resistant to the temperature of about 200 ℃, low-temperature deposition is needed, and the thickness of the TCO film is generally controlled to be 75-85 nm; the light-transmitting conductive film has light transmittance and conductivity, allows as much light as possible to pass through and enter the emitter and the base region, and has a function of transporting charges due to the low conductivity of the amorphous silicon layer serving as the emitter.
Then, in step 800, a transparent conductive film is formed on both sides, and then screen printing is performed to form a metal electrode.
In another embodiment, the method for manufacturing a solar cell as shown in fig. 2 comprises the following steps:
s100: a single crystal silicon wafer is provided.
S200: and forming a first intrinsic amorphous silicon layer on the front surface of the monocrystalline silicon wafer.
S300: and forming a first doping type amorphous silicon layer on the surface of the first intrinsic amorphous silicon layer.
S400: and forming a second intrinsic amorphous silicon layer on the reverse side of the monocrystalline silicon wafer.
S500: and forming a second doped amorphous silicon layer on the surface of the second intrinsic amorphous silicon layer.
S600: and annealing the second doping type amorphous silicon layer.
S610: and cleaning the annealed second doped amorphous silicon layer.
S700: and forming a light-transmitting conductive film on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer.
S800: and screen printing is carried out on the surfaces of the two light-transmitting conductive films to form electrodes.
Different from the previous embodiment, in this embodiment, annealing is not performed after the first doped amorphous silicon layer is formed, but annealing is performed after the second doped amorphous silicon layer is formed, and certainly, cleaning is performed after the annealing, and processes, equipment, conditions, and the like adopted in each step of the method are consistent with those of the previous embodiment, and are not described in detail herein.
In another embodiment, the method for manufacturing a solar cell includes the following steps:
s100: a single crystal silicon wafer is provided.
S200: and forming a first intrinsic amorphous silicon layer on the front surface of the monocrystalline silicon wafer.
S300: and forming a first doping type amorphous silicon layer on the surface of the first intrinsic amorphous silicon layer.
S400: and annealing the first doping type amorphous silicon layer.
S410: and cleaning the annealed first doped amorphous silicon layer.
S500: and forming a second intrinsic amorphous silicon layer on the reverse side of the monocrystalline silicon wafer.
S600: and forming a second doped amorphous silicon layer on the surface of the second intrinsic amorphous silicon layer.
S610: and annealing the second doping type amorphous silicon layer.
S620: and cleaning the annealed second doped amorphous silicon layer.
S700: and forming a light-transmitting conductive film on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer.
S800: and screen printing is carried out on the surfaces of the two light-transmitting conductive films to form electrodes.
It can be seen that, in this embodiment, annealing and cleaning are performed not only after the first doped amorphous silicon layer is formed, but also after the second doped amorphous silicon layer is formed, and processes, devices, conditions, and the like adopted in other steps are consistent with those of the first embodiment, and are not described herein again.
In other embodiments, after the screen printing is completed to form the electrode, the light injection annealing treatment can be performed, and the intrinsic amorphous silicon layer (i-a-Si: H) can be passivated by irradiating with 80-200 solar white lights at a temperature below 200 ℃, and the quality of the light-transmitting conductive film and the contact characteristics of various interfaces can be improved, so that the conductive efficiency of the solar cell is better.
As shown in fig. 4, the present invention further provides a solar cell, which includes a monocrystalline silicon wafer (taking an N-type monocrystalline silicon wafer as an example), wherein a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer (i.e., an N-type doped amorphous silicon layer), a transparent conductive film (i.e., TCO), a silicon nitride layer, and an electrode are sequentially disposed on a front surface of the monocrystalline silicon wafer from an inner layer to an outer layer; the reverse side is provided with a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer (namely a P-type doped amorphous silicon layer), a transparent conducting film (namely TCO), a silicon nitride layer and an electrode in sequence from the inner layer to the outer layer. The solar cell is manufactured by the solar cell manufacturing method, and the solar cell adopts all the technical schemes of all the embodiments, so that the solar cell at least has all the beneficial effects brought by the technical schemes of the embodiments, and the details are not repeated.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A solar cell manufacturing method comprises the following steps:
providing a monocrystalline silicon wafer;
forming a first intrinsic amorphous silicon layer on the front surface of the monocrystalline silicon wafer;
forming a first doped amorphous silicon layer on the surface of the first intrinsic amorphous silicon layer;
forming a second intrinsic amorphous silicon layer on the reverse side of the monocrystalline silicon wafer;
forming a second doped amorphous silicon layer on the surface of the second intrinsic amorphous silicon layer;
forming light-transmitting conductive films on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer respectively;
performing screen printing on the surfaces of the two light-transmitting conductive films to form electrodes;
the method is characterized in that after a first doped amorphous silicon layer is formed on the surface of the first intrinsic amorphous silicon layer, the first doped amorphous silicon layer is annealed to form a microcrystalline or polycrystalline structure on the first doped amorphous silicon layer;
and/or the presence of a gas in the gas,
and after a second doped amorphous silicon layer is formed on the surface of the second intrinsic amorphous silicon layer, annealing the second doped amorphous silicon layer to form a microcrystalline or polycrystalline structure on the second doped amorphous silicon layer.
2. The method of claim 1, wherein the annealing of the first doped amorphous silicon layer or the second doped amorphous silicon layer is performed by laser annealing, the laser has a wavelength of 300nm to 1200nm, and the irradiation time is 1 ns to 1 min.
3. The method of claim 2, wherein the laser annealing is performed by at least one laser irradiation on the first doped amorphous silicon layer or the second doped amorphous silicon layer.
4. The method according to claim 1, wherein the first doped amorphous silicon layer or the second doped amorphous silicon layer is annealed by high temperature annealing at a temperature of 100 to 700 ℃ for 1 ns to 1 min.
5. The method according to claim 4, wherein the first doped amorphous silicon layer or the second doped amorphous silicon layer is heated at least once during the high temperature annealing.
6. The method of claim 1, further comprising: and cleaning the first doped amorphous silicon layer and/or the second doped amorphous silicon layer after annealing.
7. The method of claim 6, wherein the cleaning is performed using hydrofluoric acid as a cleaning solution.
8. The method according to claim 1, wherein a light-transmitting conductive film is formed on the surfaces of the first doped amorphous silicon layer and the second doped amorphous silicon layer, and then a silicon nitride layer is formed on the light-transmitting conductive film.
9. The method of any of claims 1 to 8, further comprising: and performing light injection annealing treatment after forming the electrode by screen printing.
10. A solar cell, characterized in that it is manufactured using the solar cell manufacturing method according to any one of claims 1 to 9.
CN202110024415.2A 2021-01-08 2021-01-08 Solar cell and manufacturing method thereof Pending CN113451445A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220077261A1 (en) * 2020-09-08 2022-03-10 Samsung Display Co., Ltd. Display device and manufacturing method thereof
CN116230813A (en) * 2023-04-26 2023-06-06 合肥华晟光伏科技有限公司 Heterojunction battery preparation method and film forming equipment

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192870A (en) * 2009-02-18 2010-09-02 Korea Inst Of Industrial Technology Method for manufacturing silicon nano-wire, solar cell including the same, and method for manufacturing the solar cell
CN104112795A (en) * 2014-07-30 2014-10-22 新奥光伏能源有限公司 Method for producing silicon heterojunction solar cell
US20180166603A1 (en) * 2016-12-08 2018-06-14 Ramesh Kakkad Method of fabricating thin film photovoltaic devices
CN108735828A (en) * 2018-07-02 2018-11-02 黄河水电光伏产业技术有限公司 A kind of hetero-junctions back contact solar cell and preparation method thereof
CN109509807A (en) * 2018-12-04 2019-03-22 江苏爱康能源研究院有限公司 Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof
CN109638101A (en) * 2018-12-04 2019-04-16 江苏爱康能源研究院有限公司 The emitter structure and preparation method thereof of the double-deck amorphous silicon doped layer solar cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192870A (en) * 2009-02-18 2010-09-02 Korea Inst Of Industrial Technology Method for manufacturing silicon nano-wire, solar cell including the same, and method for manufacturing the solar cell
CN104112795A (en) * 2014-07-30 2014-10-22 新奥光伏能源有限公司 Method for producing silicon heterojunction solar cell
US20180166603A1 (en) * 2016-12-08 2018-06-14 Ramesh Kakkad Method of fabricating thin film photovoltaic devices
CN108735828A (en) * 2018-07-02 2018-11-02 黄河水电光伏产业技术有限公司 A kind of hetero-junctions back contact solar cell and preparation method thereof
CN109509807A (en) * 2018-12-04 2019-03-22 江苏爱康能源研究院有限公司 Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof
CN109638101A (en) * 2018-12-04 2019-04-16 江苏爱康能源研究院有限公司 The emitter structure and preparation method thereof of the double-deck amorphous silicon doped layer solar cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220077261A1 (en) * 2020-09-08 2022-03-10 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US11715739B2 (en) * 2020-09-08 2023-08-01 Samsung Display Co., Ltd. Display device and manufacturing method thereof
CN116230813A (en) * 2023-04-26 2023-06-06 合肥华晟光伏科技有限公司 Heterojunction battery preparation method and film forming equipment

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