CN110634961A - Double-sided passivation back contact heterojunction solar cell and manufacturing method thereof - Google Patents
Double-sided passivation back contact heterojunction solar cell and manufacturing method thereof Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 15
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- 239000010410 layer Substances 0.000 claims description 97
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
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- 238000002955 isolation Methods 0.000 claims description 3
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Abstract
The invention discloses a double-sided passivation back contact heterojunction solar cell and a manufacturing method thereof. The manufacturing method comprises the steps of growing ultrathin oxide medium layers on the upper surface and the lower surface of a crystalline silicon substrate, depositing a thin-film silicon layer on a light receiving surface, and depositing a low-temperature process anti-reflection film layer; depositing a p-type heavily doped amorphous silicon layer, an n-type heavily doped amorphous silicon layer, a transparent conductive film layer, preparing a metal electrode and the like on the backlight surface. The invention has high light absorption efficiency, can effectively avoid high-temperature damage, is convenient, simple and convenient to prepare, and improves the production efficiency of the back contact heterojunction solar cell.
Description
Technical Field
The invention relates to the technical field of heterojunction solar cells, in particular to a double-sided passivation back contact heterojunction solar cell and a manufacturing method thereof.
Background
The back contact heterojunction solar cell is a derivative solar cell structure integrating excellent structural characteristics of a back contact solar cell and a heterojunction solar cell, has the excellent characteristics of no grid line shielding and comprehensive light receiving of the front surface of the back contact solar cell, has the excellent passivation effect of the heterojunction solar cell, and mutually matches various different band gap semiconductors to improve the photo-generated potential difference and further increase the absorption capacity of open-circuit voltage and infrared spectrum.
However, the back contact heterojunction solar cell still cannot have a perfect structure for some reasons, hydrogenated amorphous silicon in the heterojunction structure cannot adapt to high-temperature treatment at the temperature of more than 200 ℃, the selection of the front surface antireflection film is limited to a certain extent, and the silicon nitride deposited at the temperature of about 450 ℃ with the traditional excellent characteristics cannot be used on the surface of the heterojunction cell passivated by the double-sided intrinsic amorphous silicon. In addition, the back contact heterojunction solar cell has complex preparation process steps and cannot meet the requirement of mass production.
Disclosure of Invention
Aiming at the technical defects of the conventional back contact heterojunction solar cell, the invention provides a double-sided passivated back contact heterojunction solar cell and a simple and convenient manufacturing method thereof.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a double-sided passivation back contact heterojunction solar cell comprises a crystalline silicon substrate, wherein an ultrathin oxide medium passivation layer, a thin film silicon layer and a low-temperature process antireflection film layer are sequentially arranged on a light receiving surface of the crystalline silicon substrate, the ultrathin oxide medium passivation layer is arranged on a backlight surface of the crystalline silicon substrate, a p-type heavily doped amorphous silicon layer and an n-type heavily doped amorphous silicon layer which are arranged at intervals are arranged on the ultrathin oxide medium passivation layer, and the p-type heavily doped amorphous silicon layer and the n-type heavily doped amorphous silicon layer are respectively and sequentially provided with a transparent conductive thin film layer and a metal electrode layer.
Further, the crystalline silicon substrate is n-type or p-type, and the crystal type is single crystal or polycrystal.
Furthermore, the ultrathin oxide medium passivation layer is all similar ultrathin oxide films of silicon dioxide, aluminum oxide, titanium dioxide, silicon oxynitride and the like, and the thickness of the ultrathin oxide medium passivation layer is within the range of 0.5-10 nm.
Furthermore, the thin film silicon layer is a hydrogenated silicon thin film, the crystalline state is amorphous, microcrystalline or polycrystalline, and the conductive type is n type or p type
Furthermore, the growth temperature of the low-temperature process antireflection film layer is less than or equal to 250 ℃, the low-temperature process antireflection film layer is composed of a single-layer film or a plurality of layers of films with different refractive indexes, and the comprehensive refractive index of the low-temperature process antireflection film layer and the film silicon layer covered by the low-temperature process antireflection film layer is in the range of 1.9-2.1.
Further, the p-type heavily doped amorphous silicon layer and the n-type heavily doped amorphous silicon layer are hydrogenated doped amorphous silicon.
A method of making the above-described double-sided passivated back contact heterojunction solar cell, the method comprising the steps of:
cleaning and double-sided texturing a substrate by using an n-type crystal silicon wafer or a p-type crystal silicon wafer as the substrate and using a chemical cleaning process;
growing or depositing an ultrathin oxide medium passivation layer on the surface of the substrate;
taking one surface of the substrate as a light receiving surface, and depositing a thin film silicon layer on the ultrathin oxide medium passivation layer on the surface of the substrate;
depositing a low-temperature process anti-reflection layer on the surface of the thin film silicon layer;
depositing heavily doped p-type amorphous silicon or n-type amorphous silicon on the ultrathin oxide medium passivation layer on the backlight surface of the substrate;
carrying out pattern mask on the heavily doped p-type amorphous silicon or n-type amorphous silicon surface;
selectively removing the heavily doped p-type amorphous silicon or n-type amorphous silicon after the mask;
removing the mask plate, and depositing n-type amorphous silicon or p-type amorphous silicon on the whole back surface;
masking the backlight surface again;
removing the n-type amorphous silicon or the p-type amorphous silicon on the surface of the heavily doped p-type amorphous silicon or the n-type amorphous silicon;
removing the mask plate, and depositing a transparent conductive film on the whole backlight surface;
isolating the p-type region from the n-type region;
and preparing metal electrodes on the surfaces of the transparent conductive films of the p-type region and the n-type region.
Further, the method for growing or depositing the ultrathin oxide dielectric passivation layer comprises a series of similar methods for growing a compact thin film, such as a thermal oxidation method, a wet chemical growth method, an ozone treatment method, a UV ultraviolet irradiation method, a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, an atmospheric pressure vapor deposition method (APCVD) method, an Atomic Layer Deposition (ALD), a magnetron sputtering method, and the like.
Furthermore, the deposition methods used for the low-temperature process anti-reflection layer, the thin film silicon layer, the p-type heavily doped amorphous silicon layer and the n-type heavily doped amorphous silicon layer comprise a series of similar methods for epitaxially growing a compact thin film, such as a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, an atmospheric pressure vapor deposition method (APCVD) method, a magnetron sputtering method and the like.
Furthermore, the isolation method of the p-type region and the n-type region comprises the steps of performing separation of the amorphous silicon at the contact position of the transparent conductive film layer on the backlight surface of the substrate, the n-type amorphous silicon and the p-type amorphous silicon in sequence by using dry etching such as screen printing, spraying and the like, or wet etching or laser scribing.
From the above description of the structure of the present invention, compared with the prior art, the present invention has the following advantages:
1. the light receiving surface of the solar cell module adopts the anti-reflection film of the low-temperature process, so that the damage of high temperature to amorphous silicon in the heterojunction cell is reduced, the optimal refractive index of the silicon surface film of the cell in the solar cell module to light is considered, and the light absorption of the solar cell is further improved.
2. The invention replaces the intrinsic amorphous silicon of the traditional heterojunction with the ultrathin oxide medium passivation layer, ensures good passivation effect, can further avoid damage to the passivation effect of the solar cell caused by slightly high temperature in the process, and improves the temperature resistance effect of the conventional back contact heterojunction solar cell.
3. The method for preparing the back contact heterojunction solar cell with the passivated double-sided oxide is relatively simple, and provides a convenient method for realizing mass production of the back contact heterojunction solar cell.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a double-sided oxide passivated back contact heterojunction solar cell of the present invention;
fig. 2a to fig. 2n are schematic views of the flow structure of a method for manufacturing a double-sided oxide passivated back contact heterojunction solar cell according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Examples
As shown in fig. 1, the double-sided passivation back contact heterojunction solar cell comprises a crystalline silicon substrate 1, wherein an ultra-thin oxide medium passivation layer 2, a thin film silicon layer 3 and a low-temperature process antireflection film layer 4 are sequentially arranged on a light receiving surface of the crystalline silicon substrate 1, the ultra-thin oxide medium passivation layer 2 is arranged on a backlight surface of the crystalline silicon substrate 1, the ultra-thin oxide medium passivation layer 2 is provided with a p-type heavily doped amorphous silicon layer 5 and an n-type heavily doped amorphous silicon layer 6 which are arranged at intervals, and the p-type heavily doped amorphous silicon layer 5 and the n-type heavily doped amorphous silicon layer 6 are respectively and sequentially provided with a transparent conductive thin film layer.
As shown in fig. 1, a crystalline silicon substrate 1 is n-type single crystal silicon, has a resistivity in the range of 1 to 5 Ω · cm, and has an ultra-thin silicon dioxide layer sequentially grown on a light receiving surface thereof, and has a thickness in the range of 0.5 to 10 nm; lightly doped n-type amorphous silicon with doping concentration<1016cm-3The thickness range is 3-30 nm; the thickness of the silicon nitride anti-reflection film is 50-90nm by a low-temperature process. The back light surface of the crystalline silicon substrate is firstly grown with ultrathin silicon dioxide in the thickness range of 0.5-10nm on the whole surface, and then the surface of the ultrathin silicon dioxide is divided into two regions, namelyA p area and an n area, wherein the p area sequentially comprises the following components from the back side of the crystalline silicon substrate: a p-type heavily doped hydrogenated amorphous silicon layer with a thickness in the range of 8-30 nm; the transparent conductive film layer is an ITO film with the thickness of 50-250 nm; the metal electrode is a copper grid with a tin layer covered on the surface, the thickness of the copper layer is 10-100 mu m, and the thickness of the tin layer is 0.3-20 mu m. The n regions are sequentially: an n-type heavily doped hydrogenated amorphous silicon layer with a thickness in the range of 5-20 nm; the transparent conductive film layer is a tin-doped indium oxide (ITO) film with the thickness of 50-250 nm; the metal electrode is a copper grid with a tin layer covered on the surface, the thickness of the copper layer is 10-100 mu m, and the thickness of the tin layer is 0.3-20 mu m.
Referring to fig. 2a to 2n, a method of fabricating a double-sided oxide passivated back contact heterojunction solar cell, the method comprising the steps of:
taking an n-type single crystal wafer as a substrate 1, and cleaning and double-sided texturing the substrate by using a chemical cleaning process;
growing an ultrathin silicon dioxide film 2 on the surfaces of the light receiving surface 1a and the backlight surface 1b of the substrate by a nitric acid wet oxidation method;
depositing a thin film silicon layer 3 on the ultrathin silicon dioxide thin film 2 on the light receiving surface of the substrate by using a PECVD method;
depositing low-temperature-process anti-silicon nitride 4 on the surface of the thin film silicon 3 by using a PECVD method, wherein the process temperature is 250-300 ℃;
depositing heavily doped p-type amorphous silicon 5 on the ultrathin oxide medium passivation layer 2 on the back surface 1b of the substrate;
carrying out a mask 10 on the surface of the heavily doped p-type amorphous silicon 5 by utilizing screen printing;
selectively removing the masked doped p-type amorphous silicon 5 by using a sodium hydroxide solution with a proper concentration;
removing the mask plate 10, and depositing n-type amorphous silicon 6 on the whole back surface;
masking the back surface by screen printing 11 again;
removing the n-type amorphous silicon 6 on the surface of the p-type amorphous silicon 5 by utilizing the special property of reaction rate that the diluted sodium hydroxide solution is difficult to corrode the p-type amorphous silicon and easy to corrode the n-type amorphous silicon;
removing the mask plate 11, and carrying out magnetron sputtering on the whole back surface ITO film 7;
depositing a copper film 8a on the ITO film 7 by a magnetron sputtering method;
isolating the p-type region and the n-type region by using a screen printing method, wherein the width of an isolation line is 50-250 micrometers;
and finally, preparing copper metal electrodes 8 covered with tin on the surfaces of the ITO thin films of the p-type region and the n-type region by using an electroplating method.
The working principle of the invention is as follows: on the basis of the traditional heterojunction, the structure is improved, and the main improvement is the following three aspects:
a. the light receiving surface is not provided with grid lines, and the double surfaces are subjected to texturing, so that the effective light receiving area of the light receiving surface reaches 100%, and the back surface of the battery can absorb light irradiated from the back surface;
b. the ultrathin oxide layer is used to replace the amorphous silicon layer, mainly because some oxide films, which are represented by ultrathin silicon dioxide, have good selective tunneling effect, and good surface passivation effect can be realized by using the special properties of the oxide films. Taking the passivation mechanism of the embodiment as an example: by utilizing the selective tunneling characteristic of the ultrathin silicon dioxide to electrons, namely a mechanism that the electrons move to a high-concentration direction, (1) the electrons in the lightly doped n-type amorphous silicon on the light receiving surface of the solar cell move to the silicon substrate, so that a large number of holes are left on the contact interface of the lightly doped n-type amorphous silicon and the silicon dioxide, and the holes in the substrate silicon are repelled by an electric field formed by the holes to move to the surface of the substrate, so that the probability of recombination of minority carrier holes in the substrate silicon and a recombination center on the surface of the silicon substrate is effectively reduced, and a good passivation effect is further achieved; (2) electrons in the p-type heavily doped amorphous silicon on the backlight surface of the solar cell flow to the n-type silicon substrate, namely holes equal to the n-type silicon substrate flow to the p-type heavily doped amorphous silicon, so that the collection of the p-type region electrode on the holes is facilitated; similarly, electrons in the n-type silicon substrate flow to the n-type heavily doped amorphous silicon layer, which is beneficial to collecting the electrons by the n-type region electrode.
b. The ultrathin oxide layer is used for replacing the amorphous silicon layer, the defect that the amorphous silicon thin film in the heterojunction solar cell cannot resist higher temperature than a small temperature can be further avoided, and the problem of technical limitation of the solar cell is solved.
The light receiving surface of the solar cell module adopts the anti-reflection film of the low-temperature process, so that the damage of high temperature to amorphous silicon in the heterojunction cell is reduced, the optimal refractive index of the silicon surface film of the cell in the solar cell module to light is considered, and the light absorption of the solar cell is further improved; the ultrathin oxide medium passivation layer is used for replacing intrinsic amorphous silicon of the traditional heterojunction, so that the damage to the passivation effect of the solar cell caused by slightly high temperature in the process can be further avoided while the good passivation effect is ensured, and the temperature resistance effect of the conventional back contact heterojunction solar cell is improved; the method for preparing the back contact heterojunction solar cell with the passivated double-sided oxide is relatively simple, and provides a convenient method for realizing mass production of the back contact heterojunction solar cell.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A double-sided passivated back contact heterojunction solar cell, characterized in that: the solar cell comprises a crystalline silicon substrate, wherein an ultrathin oxide medium passivation layer, a thin film silicon layer and a low-temperature process antireflection film layer are sequentially arranged on a light receiving surface of the crystalline silicon substrate, the ultrathin oxide medium passivation layer is arranged on a backlight surface of the crystalline silicon substrate, a p-type heavily doped amorphous silicon layer and an n-type heavily doped amorphous silicon layer which are arranged at intervals are arranged on the ultrathin oxide medium passivation layer, and the p-type heavily doped amorphous silicon layer and the n-type heavily doped amorphous silicon layer are respectively and sequentially provided with a transparent conductive thin film layer and a metal.
2. The double-sided passivated back contact heterojunction solar cell of claim 1, wherein: the crystalline silicon substrate is n-type or p-type, and the crystal type is single crystal or polycrystal.
3. The double-sided passivated back contact heterojunction solar cell of claim 1, wherein: the ultrathin oxide medium passivation layer is made of silicon dioxide, aluminum oxide, titanium dioxide, silicon oxynitride and other similar ultrathin oxide films, and the thickness of the ultrathin oxide medium passivation layer is within the range of 0.5-10 nm.
4. The double-sided passivated back contact heterojunction solar cell of claim 1, wherein: the thin film silicon layer is a hydrogenated silicon thin film, the crystalline state is amorphous, microcrystalline or polycrystalline, and the conductive type is n type or p type.
5. The double-sided passivated back contact heterojunction solar cell of claim 1, wherein: the growth temperature of the low-temperature process antireflection film layer is less than or equal to 250 ℃, the low-temperature process antireflection film layer is composed of a single-layer film or a plurality of layers of films with different refractive indexes, and the comprehensive refractive index of the low-temperature process antireflection film layer and the film silicon layer covered by the low-temperature process antireflection film layer meets the range of 1.9-2.1.
6. The double-sided passivated back contact heterojunction solar cell of claim 1, wherein: the p-type heavily doped amorphous silicon layer and the n-type heavily doped amorphous silicon layer are hydrogenated doped amorphous silicon.
7. A method for preparing a double-sided passivated back contact heterojunction solar cell is characterized by comprising the following steps: the method comprises the following steps:
cleaning and double-sided texturing a substrate by using an n-type crystal silicon wafer or a p-type crystal silicon wafer as the substrate and using a chemical cleaning process;
growing or depositing an ultrathin oxide medium passivation layer on the surface of the substrate;
taking one surface of the substrate as a light receiving surface, and depositing a thin film silicon layer on the ultrathin oxide medium passivation layer on the surface of the substrate;
depositing a low-temperature process anti-reflection layer on the surface of the thin film silicon layer;
depositing heavily doped p-type amorphous silicon or n-type amorphous silicon on the ultrathin oxide medium passivation layer on the backlight surface of the substrate;
carrying out pattern mask on the heavily doped p-type amorphous silicon or n-type amorphous silicon surface;
selectively removing the heavily doped p-type amorphous silicon or n-type amorphous silicon after the mask;
removing the mask plate, and depositing n-type amorphous silicon or p-type amorphous silicon on the whole back surface;
masking the backlight surface again;
removing the n-type amorphous silicon or the p-type amorphous silicon on the surface of the heavily doped p-type amorphous silicon or the n-type amorphous silicon; removing the mask plate, and depositing a transparent conductive film on the whole backlight surface;
isolating the p-type region from the n-type region;
and preparing metal electrodes on the surfaces of the transparent conductive films of the p-type region and the n-type region.
8. The method of claim 7, wherein the method comprises: the method for growing or depositing the ultrathin oxide medium passivation layer comprises a series of similar methods for growing a compact thin film, such as a thermal oxidation method, a wet chemical growth method, an ozone treatment method, a UV ultraviolet irradiation method, a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, an atmospheric pressure vapor deposition method (APCVD) method, an Atomic Layer Deposition (ALD) method, a magnetron sputtering method and the like.
9. The method of claim 7, wherein the method comprises: the deposition methods used by the low-temperature process anti-reflection layer, the film silicon layer, the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer comprise a series of similar methods for epitaxially growing a compact film, such as a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, an atmospheric pressure vapor deposition method (APCVD) method, a magnetron sputtering method and the like.
10. The method of claim 7, wherein the method comprises: the isolation method of the p-type region and the n-type region comprises the steps of performing separation of amorphous silicon at the contact position of the n-type amorphous silicon and the p-type amorphous silicon from the transparent conductive film layer on the backlight surface of the substrate in sequence by dry etching or wet etching or laser scribing methods such as screen printing, spraying and the like.
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