CN114597290B - Preparation method of heterojunction solar cell - Google Patents
Preparation method of heterojunction solar cell Download PDFInfo
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- CN114597290B CN114597290B CN202210180572.7A CN202210180572A CN114597290B CN 114597290 B CN114597290 B CN 114597290B CN 202210180572 A CN202210180572 A CN 202210180572A CN 114597290 B CN114597290 B CN 114597290B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 180
- 238000002347 injection Methods 0.000 claims abstract description 126
- 239000007924 injection Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 295
- 238000005286 illumination Methods 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 79
- 230000008569 process Effects 0.000 claims description 46
- 239000001257 hydrogen Substances 0.000 claims description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 17
- 238000004378 air conditioning Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 abstract description 22
- 230000000694 effects Effects 0.000 abstract description 19
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000011049 filling Methods 0.000 abstract description 6
- 230000008439 repair process Effects 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 66
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 22
- 238000007650 screen-printing Methods 0.000 description 22
- 230000007547 defect Effects 0.000 description 20
- 238000000151 deposition Methods 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 238000012360 testing method Methods 0.000 description 17
- 238000005240 physical vapour deposition Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- -1 phosphorus ions Chemical class 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 210000002381 plasma Anatomy 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 241000227425 Pieris rapae crucivora Species 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GVGLGOZIDCSQPN-PVHGPHFFSA-N Heroin Chemical compound O([C@H]1[C@H](C=C[C@H]23)OC(C)=O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4OC(C)=O GVGLGOZIDCSQPN-PVHGPHFFSA-N 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The invention provides a preparation method of a heterojunction solar cell, which comprises the following steps: preparing an amorphous silicon film on a crystalline silicon substrate, and performing first light injection on the amorphous silicon film by adopting short-wave laser, wherein the wavelength of the short-wave laser is 250-650 nm; preparing a transparent conductive film on the amorphous silicon film, and performing second light injection on the transparent conductive film by adopting long-wave laser, wherein the wavelength of the long-wave laser is 950-1250 nm; and preparing an electrode on the upper surface of the transparent conductive film, and performing third light injection on the amorphous silicon film, the transparent conductive film and the electrode by adopting the laser overlapped by the short-wave laser and the long-wave laser. The preparation method can repair damage occurring in the heterojunction solar cell manufacturing process in time, so that the cell has good passivation effect and film conductivity, and the open-circuit voltage, the filling factor and the conversion efficiency of the heterojunction solar cell are improved.
Description
Technical Field
The invention relates to the technical field of heterojunction solar cells, in particular to a preparation method of a heterojunction solar cell.
Background
The traditional manufacturing method of the heterojunction solar cell comprises the steps of firstly carrying out texturing cleaning treatment on an N-type monocrystalline silicon wafer, then depositing an intrinsic amorphous silicon film and an N-type amorphous silicon film on the front surface of the silicon wafer, depositing an intrinsic amorphous silicon film and a P-type amorphous silicon film on the back surface of the silicon wafer, then plating a transparent conductive film on the amorphous silicon film, manufacturing a metal electrode on the transparent conductive film through a screen printing process and the like, and finally carrying out LED light injection on the cell. The structure of the heterojunction solar cell is shown in fig. 1.
The traditional manufacturing method of the heterojunction solar cell mainly has the following defects:
when a doped amorphous silicon film (an N-type amorphous silicon film and a P-type amorphous silicon film) is deposited, boron/phosphorus ions in the doped layer can diffuse into the intrinsic amorphous silicon film, so that the passivation effect of the intrinsic amorphous silicon film is poor; furthermore, the doped amorphous silicon thin film has a large defect density inside the film layer due to the presence of the doping element, thereby causing a large parasitic absorption of the doped layer. The above factors limit the Voc and Isc levels of the battery cells, affecting the efficiency of the battery cells.
In addition, the transparent conductive film is generally deposited by adopting a PVD (Physical Vapor Deposition ) magnetron sputtering method, part of negatively charged/neutral plasmas in the magnetron sputtering process bombard a silicon wafer substrate of an anode, and the amorphous silicon film on the surface of the silicon wafer is damaged, so that the passivation effect of the amorphous silicon film is poor, and the defect recombination centers in the film layer are increased. In addition, in the magnetron sputtering process, due to bombardment of high-energy ions on the transparent conductive film, abundant defects can be introduced into the transparent conductive film and the microstructure of the transparent conductive film is influenced, so that the light transmittance and electron transmission of the transparent conductive film layer are influenced, and the battery efficiency is further influenced.
In addition, in the screen printing process, the temperature of the drying and curing process is generally 180-220 ℃, and the time is generally more than 15 minutes, so that part of unstable hydrogen atoms in the amorphous silicon film and the transparent conductive film can escape after long-time heating, defects are formed in the film layer, and the passivation performance of the amorphous silicon film and the transparent conductive film is deteriorated.
Therefore, it is necessary to develop a new method for fabricating heterojunction solar cells to overcome the defects of the conventional fabrication method and improve the performance of heterojunction solar cells.
Disclosure of Invention
Based on this, it is necessary to provide a method for manufacturing a heterojunction solar cell capable of improving passivation performance and conductivity of a cell and improving conversion efficiency of the cell.
The technical scheme provided by the invention is as follows:
a preparation method of a heterojunction solar cell comprises the following steps:
preparing an amorphous silicon film on a crystalline silicon substrate;
performing first light injection on the amorphous silicon film by adopting short-wave laser, wherein the wavelength of the short-wave laser is 250-650 nm, and then preparing a transparent conductive film on the amorphous silicon film;
performing second light injection on the transparent conductive film by using long-wave laser, wherein the wavelength of the long-wave laser is 950-1250 nm, and then preparing an electrode on the transparent conductive film; a kind of electronic device with high-pressure air-conditioning system
And carrying out third light injection on the amorphous silicon film, the transparent conductive film and the electrode by adopting laser overlapped by the short-wave laser and the long-wave laser.
In some embodiments, the short wave laser has a wavelength of 350nm to 450nm.
In some of these embodiments, the wavelength of the long-wave laser is 1000nm to 1100nm.
In some of these embodiments, the process conditions of the first light implant are:
hydrogen is used as medium gas, light injection is carried out at 160-220 ℃, the illumination intensity is 1 sun-20 sun, and the illumination time is 10-180 s.
In some of these embodiments, the process conditions of the first light implant are:
hydrogen is used as medium gas, light injection is carried out at 180-190 ℃, the illumination intensity is 2-6 suns, and the illumination time is 100-120 s.
In some of these embodiments, the process conditions for the second light implantation are:
hydrogen is used as medium gas, light injection is carried out at 155-220 ℃, the illumination intensity is 1 sun-40 sun, and the illumination time is 200-800 s.
In some of these embodiments, the process conditions for the second light implantation are:
hydrogen is used as medium gas, light injection is carried out at 155-165 ℃, the illumination intensity is 5-15 suns, and the illumination time is 450-550 s.
In some of these embodiments, the process conditions for the third light implantation are:
hydrogen is used as medium gas, light injection is carried out at 160-220 ℃, the illumination intensity is 1 sun-80 sun, and the illumination time is 10-180 s.
In some of these embodiments, the process conditions for the third light implantation are:
hydrogen is used as medium gas, light injection is carried out at 185-195 ℃, the illumination intensity is 10-20 suns, and the illumination time is 80-120 s.
In some embodiments, the preparing an amorphous silicon film on a crystalline silicon substrate comprises the steps of:
preparing an intrinsic amorphous silicon film on a crystalline silicon substrate; a kind of electronic device with high-pressure air-conditioning system
Preparing a doped amorphous silicon film on the surface of the intrinsic amorphous silicon film, which is away from the crystalline silicon substrate, wherein the doped amorphous silicon film is an N-type amorphous silicon film or a P-type amorphous silicon film.
In some of these embodiments, the intrinsic amorphous silicon thin film has a thickness of 5nm to 10nm.
In some embodiments, the thickness of the N-type amorphous silicon film is 5 nm-15 nm.
In some embodiments, the thickness of the P-type amorphous silicon film is 10 nm-20 nm.
In some embodiments, the transparent conductive film has a thickness of 90nm to 110nm.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, short wave laser light injection with specific wavelength is carried out after the preparation of the amorphous silicon film is finished, long wave laser light injection with specific wavelength is carried out after the preparation of the transparent conductive film is finished, and laser light injection with superposition of the short wave and the long wave is carried out after the preparation of the electrode is finished. The laser light source has narrow wavelength distribution range, relatively concentrated energy compared with the common white light source, and single photon has larger energy. The first light injection is carried out by adopting a short-wave laser source, the short-wave laser can be absorbed by the amorphous silicon film to the greatest extent, and the damage of the amorphous silicon film can be repaired in time; the second light injection is carried out by adopting a long-wave laser source, so that the long-wave laser is easier to be absorbed by the transparent conductive film, and the damage of the transparent conductive film is repaired in time; after the electrode is prepared, a short wave and long wave overlapped laser light source is adopted to perform third light injection, so that defects in the amorphous silicon film and the transparent conductive film caused by hydrogen atom escape in the battery preparation process can be simultaneously repaired, and meanwhile, the contact resistance between the metal electrode and the transparent conductive film can be reduced, and further the filling factor is improved. Through the three laser light injection steps, the damage of the amorphous silicon film and the transparent conductive film in the heterojunction solar cell manufacturing process can be repaired in time, the contact resistance between the electrode and the transparent conductive film is reduced, the cell has good passivation effect and film conductivity, and the open-circuit voltage, the filling factor and the conversion efficiency of the heterojunction solar cell are improved.
Drawings
Fig. 1 is a schematic structural diagram of a heterojunction solar cell.
Fig. 2 is a process flow diagram of the preparation method of the present invention.
Detailed Description
The detailed description of the present invention will be provided to make the above objects, features and advantages of the present invention more obvious and understandable. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Unless otherwise specifically indicated, the various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or may be prepared by existing methods.
Some embodiments of the present invention provide a method for fabricating a heterojunction solar cell, including the following steps S100 to S300.
Step S100: preparing an amorphous silicon film on a crystalline silicon substrate, and performing first light injection on the amorphous silicon film by adopting short-wave laser, wherein the wavelength of the short-wave laser is 250-650 nm.
An amorphous silicon film is prepared on a crystalline silicon substrate by a Physical Vapor Deposition (PVD) method, and then a short-wave laser is adopted for first light injection. The amorphous silicon film comprises an intrinsic amorphous silicon film and a doped amorphous silicon film, and the preparation method comprises the following steps: firstly, preparing an intrinsic amorphous silicon film on a crystalline silicon substrate; and then preparing a doped amorphous silicon film on the surface of the intrinsic amorphous silicon film, which is away from the crystalline silicon substrate.
When the heterojunction solar cell deposits the doped amorphous silicon film, boron/phosphorus ions in the doped layer can diffuse into the intrinsic amorphous silicon film, so that the passivation effect of the intrinsic amorphous silicon film is poor; and the doped amorphous silicon film has large defect density inside the film layer due to the existence of doping elements, so that parasitic absorption of the doped layer is large. These factors can limit the Voc and Isc levels of heterojunction solar cells, resulting in inefficiency of the cell.
After the amorphous silicon film is prepared, short-wave laser with the wavelength of 250-650 nm is adopted for first light injection. The laser light source has narrow wavelength distribution range, relatively concentrated energy compared with the common white light source, and single photon has larger energy. The laser source with short wavelength can be absorbed by the amorphous silicon film to the greatest extent. When photons emitted by the laser light source are absorbed by the amorphous silicon film, hydrogen ions in the amorphous silicon film can be excited to a transition state, the hydrogen ions in the transition state can be combined with dangling bonds in the amorphous silicon film, the composite center caused by doping elements in the amorphous silicon film is eliminated, and weak bonds in a large number of SiH 3-ion groups in the amorphous silicon film can be broken by the hydrogen ions in the transition state, so that rigid Si-H bonds are formed, the SiH2 proportion in the amorphous silicon film is increased, and the passivation performance of the amorphous silicon film is improved; at the same time, parasitic absorption of the doped layer can also be reduced.
According to the invention, after the film coating of the amorphous silicon film is finished, the defects in the amorphous silicon film are repaired in time through the first light injection, so that the defect problem in the film layer can be prevented from being further enlarged. For example, in repairing weak bonds, the weak bonds are unstable and easily broken, and dangling bonds are formed after the weak bonds are broken, thereby forming defects. The first light injection is carried out after the film plating is finished, weak bonds are actively broken in the excited state of the laser light source, and the weak bonds are repaired in time to become rigid connection bonds, so that the problem that the subsequent defects are continuously expanded is avoided.
In some preferred embodiments, the short wave laser used for the first light injection has a wavelength in the range of 350nm to 450nm. By adopting the shortwave laser with the preferable wavelength, the light injection effect of the shortwave laser on the amorphous silicon film can be better improved.
In some of these embodiments, the process conditions for the first light implantation are: hydrogen is used as medium gas, light injection is carried out at 160-220 ℃, the illumination intensity is 1 sun-20 sun, and the illumination time is 10-180 s.
Specifically, after the amorphous silicon thin film is prepared, the battery piece is sent into a first laser light injection chamber for first light injection. I.e. a first laser light injection chamber is added before the battery piece enters the cooling chamber. The chamber is filled with hydrogen as medium gas, the temperature of the chamber is controlled between 160 ℃ and 220 ℃, and the wavelength of the laser source is any one wavelength between 250nm and 650 nm. The laser beam formed by the laser with the wavelength can be in any shape, but the area of the laser beam is required to be larger than the area of the crystalline silicon substrate (the shape and the size of the cell are close to the optimal), the illumination intensity is 1 sun-20 sun, and the illumination time is 10 s-180 s.
Under the light injection process condition, the amorphous silicon film can be fully passivated, and parasitic absorption of the doped layer is greatly reduced, so that the efficiency of the heterojunction solar cell is improved.
In some preferred embodiments, the first light injection is preferably performed at a temperature of 180℃to 190℃and an illumination intensity of preferably 2 to 6suns and an illumination time of preferably 100 to 120s. Under the preferable light injection process conditions, the light injection effect on the amorphous silicon film is better.
Specifically, the doped amorphous silicon film is an N-type amorphous silicon film or a P-type amorphous silicon film. The crystalline silicon substrate is an N-type monocrystalline silicon wafer.
In one specific example, intrinsic amorphous silicon films are prepared on the upper surface and the lower surface of the N-type monocrystalline silicon wafer opposite to each other, and doped amorphous silicon films are prepared on the surfaces of the two layers of intrinsic amorphous silicon films, which are away from the N-type monocrystalline silicon wafer; and one surface of the doped amorphous silicon film is an N-type amorphous silicon film, and the other surface of the doped amorphous silicon film is a P-type amorphous silicon film.
The thicknesses of the intrinsic amorphous silicon thin film and the doped amorphous silicon thin film may be set as needed. Generally, the intrinsic amorphous silicon film has a thickness of 5nm to 10nm, the N-type amorphous silicon film has a thickness of 5nm to 15nm, and the P-type amorphous silicon film has a thickness of 10nm to 20nm. The thicknesses of the intrinsic amorphous silicon film, the N-type amorphous silicon film and the P-type amorphous silicon film are within the above ranges, and the effect of light injection is better.
In some of these embodiments, the crystalline silicon substrate is also subjected to a texturing and cleaning process prior to the preparation of the amorphous silicon thin film on the crystalline silicon substrate. And the texture surface is formed on the crystalline silicon substrate through texture surface making treatment, so that the amorphous silicon film can be deposited and prepared on the crystalline silicon substrate later. It is understood that the texturing and cleaning process may employ processes conventional in the art.
Step S200: and preparing a transparent conductive film on the amorphous silicon film subjected to the first light injection, and performing second light injection on the transparent conductive film by using long-wave laser, wherein the wavelength of the long-wave laser is 950-1250 nm.
After the first light injection, the invention adopts a physical vapor deposition method to prepare a transparent conductive film on the amorphous silicon film, and adopts long-wave laser to perform the second light injection.
The transparent conductive film is deposited and prepared on the amorphous silicon film, and part of negatively charged/neutral plasmas in the magnetron sputtering process bombard a silicon wafer substrate of an anode, namely, the plasmas damage the amorphous silicon film on the surface of the silicon wafer, so that the passivation effect of the amorphous silicon film is poor, and the defect recombination centers in the amorphous silicon film are increased. In addition, during the magnetron sputtering process, the bombardment of the transparent conductive film by the high-energy ions can introduce abundant defects into the transparent conductive film and affect the microstructure of the transparent conductive film. The above factors may cause the light transmittance and electron transport of the transparent conductive film to be affected, thereby affecting the battery efficiency.
After the transparent conductive film is prepared, the invention adopts the long-wave laser with the wavelength of 950 nm-1250 nm to carry out second light injection. The transparent conductive film is easier to absorb long-wave laser, namely photons in long-wave illumination can be absorbed by the transparent conductive film, and when the photons reach the inside of the transparent conductive film, hydrogen ions in the transparent conductive film can be excited to carry out transition, so that a transition state is reached, and the hydrogen ions in the transition state are combined with suspension bonds in the transparent conductive film; meanwhile, the diffusion motion of the high-energy-state hydrogen ions in the film can optimize the quality of the transparent conductive film; part of active hydrogen ions can also act on the interface of the amorphous silicon film and the transparent conductive film, so that the amorphous silicon film damaged by bombardment on the interface is repaired; in addition, when the illumination intensity of the laser light source is more than 1sun, the laser beam irradiates on the transparent conductive film, and the irradiation energy of the laser beam is high, and the heating speed is high, so that compared with the common heating wire heating annealing process, the crystallinity of the transparent conductive film can be further improved, and the transparency and the conductivity of the transparent conductive film are obviously improved.
After the film coating of the transparent conductive film is finished, the second light injection is performed in time, and high-energy photons contained in the long-wave laser beam can be utilized to act on the inside of the transparent conductive film so as to promote grain growth in the film layer. If the screen printing process is performed and the annealing process is performed after the film plating process of the transparent conductive film is completed, the middle of the transparent conductive film is already subjected to a cooling process, and part of the hatching layer to be nucleated originally forms defects due to the cooling process, which is not beneficial to grain growth.
In some preferred embodiments, the wavelength of the long-wave laser used for the second light injection is in the range of 1000nm to 1100nm. The long-wave laser with the preferable wavelength range is adopted to carry out second light injection on the transparent conductive film, so that the light injection effect of the transparent conductive film can be further improved.
In some of these embodiments, the process conditions for the second light implantation are: hydrogen is used as medium gas, light injection is carried out at 155-220 ℃, the illumination intensity is 1 sun-40 sun, and the illumination time is 200-800 s.
Specifically, after the transparent conductive film is prepared, the battery piece is sent into a second laser light injection chamber for second light injection. I.e. before the battery piece enters the cooling chamber, a second laser light injection chamber is added. The chamber is filled with hydrogen as medium gas, the temperature of the chamber is controlled at 155-220 ℃, and the wavelength of the laser source is any one wavelength between 950nm and 1250 nm. The laser beam formed by the laser with the wavelength can be of any shape, but the area of the laser beam is required to be larger than that of a silicon wafer, the illumination intensity is 1 sun-40 sun, and the illumination time is 200 s-800 s.
Under the condition of the light injection process, the quality of the transparent conductive film can be fully optimized, the crystallinity of the transparent conductive film is improved, the transparency and the conductivity of the transparent conductive film are improved, the amorphous silicon film damaged by bombardment on an interface is repaired, and the interface contact performance of the amorphous silicon film and the transparent conductive film is improved.
In some preferred embodiments, the second light injection is performed at a temperature of 155 ℃ to 165 ℃, preferably at an illumination intensity of 5 to 40suns, and preferably at an illumination time of 450 to 550s. Under the preferable second light injection process condition, the transparent conductive film has better light injection effect.
Specifically, the transparent conductive film is prepared by depositing the doped amorphous silicon films on the upper surface and the lower surface of the crystalline silicon substrate. The transparent conductive film may be an ITO film, a SCOT film, an AZO film, an IWO film, or the like. The thickness of the transparent conductive film can be set as required, and is generally 90nm to 110nm. The light injection effect is better in the thickness range.
Step S300: and preparing an electrode on the upper surface of the transparent conductive film after the second light injection, and performing third light injection on the amorphous silicon film, the transparent conductive film and the electrode by adopting laser overlapped by short-wave laser with the wavelength of 250-650 nm and long-wave laser with the wavelength of 950-1250 nm.
After the second light injection, the metal electrode is prepared on the transparent conductive film through screen printing, and the third light injection is carried out by adopting short wave and long wave superimposed laser.
In the production process of heterojunction solar cells, the temperature of the drying and curing process in the screen printing process is generally between 180 ℃ and 220 ℃ and the time is generally more than 15min. The long-time heating can cause the partially unstable hydrogen atoms in the amorphous silicon film and the transparent conductive film to escape, so that the passivation performance of the amorphous silicon film and the transparent conductive film is poor.
After the process of preparing the metal electrode by screen printing is finished, the invention adopts short wave and long wave overlapped laser to carry out third light injection. The laser is a combined laser formed by spatially superposing a short-wave laser beam and a long-wave laser beam. The third light injection is carried out by the combined laser, so that the defects in the amorphous silicon film and the transparent conductive film caused by the escape of hydrogen atoms can be repaired, namely, the laser beams with two different wavelengths are overlapped to respectively act on the amorphous silicon film and the transparent conductive film to excite the transition of the hydrogen atoms so as to repair the defects of the film layers. Meanwhile, the contact resistance between the metal electrode and the transparent conductive film can be reduced, and the filling factor is further improved.
In some preferred embodiments, the short-wave laser used for the third light injection has a wavelength ranging from 350nm to 450nm, and the long-wave laser has a wavelength ranging from 1000nm to 1100nm. Under the conditions of the preferred wavelength range, a better light injection effect can be obtained.
In some of these embodiments, the process conditions for the third light implantation are: nitrogen is used as medium gas, light injection is carried out at 160-220 ℃, the illumination intensity is 1 sun-80 sun, and the illumination time is 10-180 s.
Specifically, after the metal electrode is prepared, the battery plate is sent into a third laser light injection chamber for third light injection. The third laser light injection cavity is additionally arranged before the battery piece enters the testing machine, or the third laser light injection cavity is additionally arranged in the rear-section furnace chamber of the curing furnace. The inside of the cavity is filled with nitrogen as medium gas, the temperature of the cavity is controlled at 160-220 ℃, and the laser source is a combined laser beam formed by superposing any one wavelength of short waves with the wavelength of 250-650 nm and any one wavelength of long waves with the wavelength of 950-1250 nm. The shape of the light spot can be round, square or the light spot consistent with the shape and the size of the battery piece. The illumination intensity is 1 sun-80 sun, and the illumination time is 10 s-180 s.
Under the light injection process condition, the defects inside the film layer caused by the escape of hydrogen atoms in the amorphous silicon film and the transparent conductive film can be sufficiently repaired; meanwhile, the contact resistance between the metal electrode and the transparent conductive film can be well reduced, and the filling factor is improved.
In some preferred embodiments, the third light injection is performed at a temperature of 185 ℃ to 195 ℃, preferably at an illumination intensity of 10 to 20suns, and preferably at an illumination time of 80 to 120s. Under the preferred light injection process conditions, better light injection results can be obtained.
Specifically, the metal electrode may be one or more of an Ag electrode, a Cu electrode, and a Ti electrode. In one specific example, the metal electrode is an Ag electrode.
In general, the invention adds short wave laser light injection with specific wavelength after the amorphous silicon film coating is finished, adds long wave laser light injection with specific wavelength after the transparent conductive film coating is finished, and adds laser light injection with superposition of short wave and long wave with specific wavelength after the screen printing preparation electrode is finished; damage in the process of the recombination process can be timely repaired, so that the battery piece has good passivation effect and film conductivity, and finally the open-circuit voltage, the filling factor and the conversion efficiency of the heterojunction solar cell are improved.
The heterojunction solar cell prepared by the preparation method comprises an N-type monocrystalline silicon substrate, wherein the upper surface and the lower surface of the N-type monocrystalline silicon substrate are respectively defined as a P surface (namely an emitter) and an N surface (namely a back electric field). An intrinsic amorphous silicon film is deposited on the P face and the N face of the N-type monocrystalline silicon substrate respectively, a P-type amorphous silicon film is deposited on the intrinsic amorphous silicon film on one side of the P face, and an N-type amorphous silicon film is deposited on the intrinsic amorphous silicon film on one side of the N face. A layer of transparent conductive film is deposited on the P-type amorphous silicon film and the N-type amorphous silicon film, and metal electrodes are prepared on the P-face transparent conductive film and the N-face transparent conductive film. Thus forming the heterojunction solar cell with the metal electrode, the transparent conductive film, the doped amorphous silicon film (N type or P type), the intrinsic amorphous silicon film, the N type monocrystalline silicon substrate, the intrinsic amorphous silicon film, the doped amorphous silicon film (P type or N type), the transparent conductive film and the metal electrode laminated in sequence. The heterojunction solar cell prepared has good passivation performance and conductivity, and the conversion efficiency of the cell is high.
The present invention will be further described with reference to specific examples and comparative examples, which should not be construed as limiting the scope of the invention.
Example 1:
referring to fig. 2, a method for preparing a heterojunction solar cell includes the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning treatment (the upper surface of the monocrystalline silicon substrate is called a P surface, namely an emitter, and the lower surface of a silicon wafer is called an N surface, namely a back electric field).
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 8 nm) on the P surface, an intrinsic amorphous silicon film (with the thickness of 6 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 8 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 10 nm) on the P surface of the N-type monocrystalline silicon substrate through PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment.
Thirdly, carrying out laser light injection treatment on the P surface of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 160 ℃, the wavelength of a laser source is 532nm, the light spot size of a laser beam is 250mm square light spots, the illumination intensity is 2suns, and the illumination time is 120s.
And fourthly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
Fifth, carrying out laser light injection treatment on the N face of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 180 ℃, the wavelength of a laser source is 1064nm, the spot size of a laser beam is 250mm square spots, the illumination intensity is 5suns, and the illumination time is 500s.
And sixthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Seventh, carrying out laser light injection treatment on the N face of the battery piece: nitrogen is filled into the chamber, the pressure is kept in a normal pressure state, the temperature is controlled at 200 ℃, the laser light source is a light source with wavelength of 532nm and wavelength of 1064nm overlapped with each other, the light spot size of the laser beam is 250mm square light spots with the light intensity of 10suns, and the light irradiation time is 120s; and obtaining the heterojunction solar cell.
The preparation method is repeated twice to prepare two groups of heterojunction solar cell pieces, namely the examples 1-1 and 1-2. The electrical performance of the prepared heterojunction solar cell is tested, equipment used for testing the electrical performance is a WeChat IV tester, and the testing conditions are as follows: spectrum AM1.5, light intensity 1000+ -0.2% W/m 2 The test temperature was 25.+ -. 2 ℃. The test results are shown in Table 1.
Example 2:
a preparation method of a heterojunction solar cell comprises the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning.
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 10 nm) on the P surface, an intrinsic amorphous silicon film (with the thickness of 6 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 8 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 10 nm) on the P surface of the N-type monocrystalline silicon substrate through a PECVD device.
Thirdly, carrying out laser light injection treatment on the P surface of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 180 ℃, the wavelength of a laser source is 400nm, the light spot size of a laser beam is 250mm square light spots, the illumination intensity is 4suns, and the illumination time is 110s.
And fourthly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
Fifth, carrying out laser light injection treatment on the N face of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 160 ℃, the wavelength of the laser source is 1050nm, the spot size of the laser beam is 250mm square spots, the illumination intensity is 10suns, and the illumination time is 500s.
And sixthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Seventh, carrying out laser light injection treatment on the N face of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a normal pressure state, the temperature is controlled at 190 ℃, the laser light source is a light source with the wavelength of 400nm and the wavelength of 1050nm being overlapped, the light spot size of the laser beam is 250mm square light spots with the wavelength of 250mm, the illumination intensity is 15suns, and the illumination time is 100s; and obtaining the heterojunction solar cell.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Example 3:
a method for manufacturing a heterojunction solar cell, the manufacturing method of this example is basically the same as that of example 1, and differs from example 1 only in that: the wavelength of the short-wave laser used was different, and the wavelength of the short-wave laser used in this example was 400nm.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Example 4:
a method for manufacturing a heterojunction solar cell, the manufacturing method of this example is basically the same as that of example 1, and differs from example 1 only in that: the wavelength of the long-wave laser used was different, and the wavelength of the long-wave laser used in this embodiment was 1050nm.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Example 5:
a method for manufacturing a heterojunction solar cell, the manufacturing method of this example is basically the same as that of example 1, and differs from example 1 only in that: and thirdly, the temperature of the short wave laser light injection is 185 ℃, the illumination intensity is 4suns, and the illumination time is 110s.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Example 6:
a method for manufacturing a heterojunction solar cell, the manufacturing method of this example is basically the same as that of example 1, and differs from example 1 only in that: the fifth step-size wave laser light injection temperature is 160 ℃, the illumination intensity is 10suns, and the illumination time is 500s.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Example 7:
a method for manufacturing a heterojunction solar cell, the manufacturing method of this example is basically the same as that of example 1, and differs from example 1 only in that: and seventh, the temperature of laser light injection of short wave and long wave superposition is 190 ℃, the illumination intensity is 15suns, and the illumination time is 100s.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Comparative example 1:
a preparation method of a heterojunction solar cell comprises the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning.
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 6 nm) on the P surface, an intrinsic amorphous silicon film (with the thickness of 8 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 10 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 8 nm) on the P surface of the battery through a PECVD device.
And thirdly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
And fourthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Fifthly, carrying out LED light injection treatment on the N surface of the battery piece: compressed air is filled into the cavity, the pressure is kept in a normal pressure state, the temperature is controlled at 210 ℃, the LED light source is white light, the illumination intensity is 30suns, and the illumination time is 70s.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Comparative example 2:
a preparation method of a heterojunction solar cell comprises the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning.
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 6 nm), an intrinsic amorphous silicon film (with the thickness of 8 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 10 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 8 nm) on the P surface of the N-type monocrystalline silicon substrate through a PECVD device.
Thirdly, carrying out laser light injection treatment on the P surface of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 160 ℃, the wavelength of a laser source is 532nm, the light spot size of a laser beam is 250mm square light spots, the illumination intensity is 2suns, and the illumination time is 120s.
And fourthly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
And fifthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Sixthly, carrying out LED light injection treatment on the N surface of the battery piece: compressed air is filled into the cavity, the pressure is kept in a normal pressure state, the temperature is controlled at 210 ℃, the LED light source is white light, the illumination intensity is 30suns, and the illumination time is 70s.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Comparative example 3:
a preparation method of a heterojunction solar cell comprises the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning.
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 6 nm), an intrinsic amorphous silicon film (with the thickness of 8 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 10 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 8 nm) on the P surface of the N-type monocrystalline silicon substrate through a PECVD device.
And thirdly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
Fourthly, performing laser light injection treatment on the N surface of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 180 ℃, the wavelength of a laser source is 1064nm, the spot size of a laser beam is 250mm square spots, the illumination intensity is 5suns, and the illumination time is 500s.
And fifthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Sixthly, carrying out LED light injection treatment on the N surface of the battery piece: compressed air is filled into the cavity, the pressure is kept in a normal pressure state, the temperature is controlled at 210 ℃, the LED light source is white light, the illumination intensity is 30suns, and the illumination time is 70s.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Comparative example 4:
a preparation method of a heterojunction solar cell comprises the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning.
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 6 nm), an intrinsic amorphous silicon film (with the thickness of 8 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 10 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 8 nm) on the P surface of the N-type monocrystalline silicon substrate through a PECVD device.
And thirdly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
And fourthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Fifth, carrying out laser light injection treatment on the N face of the battery piece: nitrogen is filled into the chamber, the pressure is kept in a normal pressure state, the temperature is controlled at 200 ℃, the wavelength of a laser source is 1064nm, the spot size of a laser beam is 250mm square spots, the illumination intensity is 10suns, and the illumination time is 120s; and obtaining the heterojunction solar cell.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Comparative example 5:
a preparation method of a heterojunction solar cell comprises the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning.
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 6 nm), an intrinsic amorphous silicon film (with the thickness of 8 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 10 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 8 nm) on the P surface of the N-type monocrystalline silicon substrate through a PECVD device.
Thirdly, carrying out laser light injection treatment on the P surface of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 160 ℃, the wavelength of a laser source is 1064nm, the spot size of a laser beam is 250mm square spots, the illumination intensity is 2suns, and the illumination time is 120s.
And fourthly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
Fifth, carrying out laser light injection treatment on the N face of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 180 ℃, the wavelength of a laser source is 532nm, the light spot size of a laser beam is 250mm square light spots, the illumination intensity is 5suns, and the illumination time is 500s.
And sixthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Seventh, carrying out laser light injection treatment on the N face of the battery piece: nitrogen is filled into the chamber, the pressure is kept in a normal pressure state, the temperature is controlled at 200 ℃, the laser light source is a light source with wavelength of 532nm and wavelength of 1064nm overlapped with each other, the light spot size of the laser beam is 250mm square light spots with the light intensity of 10suns, and the light irradiation time is 120s; and obtaining the heterojunction solar cell.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Comparative example 6:
a preparation method of a heterojunction solar cell comprises the following steps:
firstly, selecting an N-type monocrystalline silicon substrate with the size of 210mm and 105mm and the thickness of 150 mu m for texturing and cleaning.
And secondly, sequentially depositing an intrinsic amorphous silicon film (with the thickness of 6 nm), an intrinsic amorphous silicon film (with the thickness of 8 nm) on the N surface, an N-type amorphous silicon film (with the thickness of 10 nm) on the N surface and a P-type amorphous silicon film (with the thickness of 8 nm) on the P surface of the N-type monocrystalline silicon substrate through a PECVD device.
Thirdly, carrying out laser light injection treatment on the P surface of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 160 ℃, the wavelength of a laser source is 532nm, the light spot size of a laser beam is 250mm square light spots, the illumination intensity is 2suns, and the illumination time is 120s.
And fourthly, sequentially depositing an ITO conductive film (100 nm in thickness) on the P side and an ITO conductive film (100 nm in thickness) on the N side on the surface of the battery through PVD equipment.
Fifth, carrying out laser light injection treatment on the N face of the battery piece: hydrogen is filled into the chamber, the pressure is kept in a vacuum low-pressure state consistent with the coating state, the temperature is controlled at 180 ℃, the wavelength of a laser source is 1064nm, the spot size of a laser beam is 250mm square spots, the illumination intensity is 5suns, and the illumination time is 500s.
And sixthly, forming an Ag electrode on the surface of the ITO conductive film, which is away from the amorphous silicon film, through screen printing.
Seventh, carrying out laser light injection treatment on the N face of the battery piece: nitrogen is filled into the chamber, the pressure is kept in a normal pressure state, the temperature is controlled at 200 ℃, the laser light source is a light source with the wavelength of 1064nm, the laser beam spot size is 250mm square light spots with the wavelength of 250mm, the illumination intensity is 10suns, and the illumination time is 120s; and obtaining the heterojunction solar cell.
The electrical properties of the prepared heterojunction solar cell were tested by the same method as in example 1. The test results are shown in Table 1.
Table 1 electrical performance test data of the batteries of each example and comparative example
As can be seen from the data in table 1, the products of example 1 of the present invention, examples 1-1 and 1-2, significantly improved Voc (open circuit voltage) by 2mV or more compared to comparative example 1 (LED light injection treatment only after preparation of metal electrode), indicating that laser light injection was performed after preparation of amorphous silicon thin film, after preparation of transparent conductive thin film and after preparation of electrode, respectively, and indeed improved passivation performance of heterojunction solar cell.
Compared with the comparison example 1, the Isc (short-circuit current) of the products of the examples 1-1 and 1-2 of the invention is improved by 20 mA-30 mA, which shows that the parasitic absorption of the amorphous silicon film is reduced and the quality of the transparent conductive film is changed, thereby changing the refractive index of the transparent conductive film and improving the short-circuit current of the battery piece under the combined action.
The products of example 1 of the present invention, examples 1-1 and 1-2, have an FF (fill factor) increase of 0.40% -0.45% and a contact resistance Rs decrease of 0.4-0.5 mohm, compared to comparative example 1, indicating a decrease in contact resistance between the film layers and between the transparent conductive film and the metal electrode, thus allowing the FF of the battery to be increased. The preparation method can improve the passivation performance and the conductivity of the battery piece, and improve the conversion efficiency of the battery piece by more than 0.20%.
In example 2 of the present invention, the FF (fill factor) was increased by 0.13% and the contact resistance Rs was decreased by 0.2mohm relative to examples 1-2, indicating that the contact resistance of the battery could be further decreased with the optimal parameter settings, thereby allowing the FF of the battery cell to be increased. Meanwhile, the passivation performance of the battery piece can be improved, and finally the conversion efficiency of the battery piece is improved by 0.04 percent again.
In comparative example 2, laser light injection was performed after the preparation of the amorphous silicon thin film, laser light injection was not performed after the preparation of the transparent conductive thin film, and LED light injection was performed after the preparation of the metal electrode by screen printing. Compared with comparative example 1, the electrical parameters are improved by Voc 1.3mV, isc 9mA and FF 0.12%, which shows that the preparation method mainly improves the passivation performance (Voc and FF are improved) of the battery piece, and the parasitic absorption of the doped layer can be reduced. However, in comparative example 2, with respect to the example, the off (conversion efficiency), voc, isc and FF parameters were all decreased, and Rs was increased.
Example 3 illustrates as compared to example 1: the effect of the short wave laser with the wavelength of 400nm after the amorphous silicon film plating is slightly better than 532nm, the passivation effect on the film layer is better, and the efficiency is improved by 0.03%. Example 4 compares with example 1: the effect of the wavelength 1050nm of the long-wave laser behind the transparent conductive film is basically equal to 1064nm, and the efficiency is improved by 0.01%. Example 5 compares with example 1: the third step of the process step is to raise the temperature by 20 ℃, increase the light intensity by 2suns, shorten the illumination time by 10s, improve the passivation effect of the film layer and improve the efficiency by 0.03%. Example 6 compares with example 1: the temperature of the fifth step of the process is reduced by 20 ℃, the light intensity is increased by 5suns, the illumination time is consistent, the defect of the ITO film layer is reduced, the film quality is improved, and the efficiency is improved by 0.03%. Example 7 compares to example 1: the seventh step of the process steps is to reduce the temperature by 10 ℃, increase the light intensity by 5suns, shorten the illumination time by 20s, basically have little difference between the temperature and the time, and only have larger illumination intensity, slightly improve the passivation effect of the battery and improve the efficiency by 0.01 percent.
In comparative example 3, laser light injection was not performed after the preparation of the amorphous silicon thin film, laser light injection was performed after the preparation of the transparent conductive thin film, and LED light injection was performed after the preparation of the metal electrode by screen printing. Compared with comparative example 1, the electric parameters are improved by 0.5mV for Voc, 14mA for Isc and 0.19% for FF, which shows that the preparation method mainly improves the crystallinity and grain size of the transparent conductive film and improves the contact between the transparent conductive film and the amorphous silicon film, thereby improving the contact performance of the cell. And passivation performance is slightly improved. However, in comparative example 3, both Eff, voc, isc and FF parameters were reduced and Rs was increased relative to the example.
In comparative example 4, laser light injection was not performed after the amorphous silicon thin film and the transparent conductive thin film were prepared, and laser light injection was performed after the metal electrode was prepared by screen printing. Compared with comparative example 1, the improvement of the electric parameters of Voc 1.1mV, isc 11mA and FF 0.09 percent shows that the preparation method improves the contact performance (contact between film layers and contact between transparent conductive film and metal electrode), passivation performance (defect reduction in the film layers) and optical performance (parasitic absorption reduction and resistance loss reduction) of the battery. However, in comparative example 4, both Eff, voc, isc and FF parameters were reduced and Rs was increased relative to the example.
After the amorphous silicon thin film was prepared in comparative example 5, light injection was performed using a long-wave 1064nm laser; after preparing a transparent conductive film, adopting short-wave 532nm laser to perform light injection; after the metal electrode is prepared by screen printing, the above-mentioned short wave and long wave combined laser light injection is performed. Compared with the examples 1-2, voc is reduced by 0.6mV, isc is reduced by 15mA, and FF is reduced by 0.2%; compared with examples 1-2, the comparative example does not have an amorphous silicon film corresponding to a short wave and a transparent conductive film corresponding to a long wave, which makes each film layer not optimal for laser absorption, and a large part of the film layer cannot be absorbed and penetrates through the battery, so that each electrical parameter is reduced.
After the screen printing was completed in comparative example 6, light injection was performed using a long-wave 1064nm laser. Compared with the examples 1-2, the light injection is performed after screen printing without overlapping the laser with short wavelength, the Voc is reduced by 0.6mV, the Isc is reduced by 4mA and the FF is reduced by 0.10 percent in terms of electric parameters; compared with the embodiments 1-2, the injection of long-wave laser light after screen printing is equivalent to repairing the transparent conductive film in the printing process, but long-wave laser light can not be absorbed by amorphous silicon, so that the damage of the amorphous silicon in the printing process can not be recovered, and meanwhile, the electric parameters can be seen to be mainly Voc reduction, namely, the passivation performance is reduced, so that FF is reduced, and the efficiency is lower by 0.06%.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The preparation method of the heterojunction solar cell is characterized by comprising the following steps of:
preparing an amorphous silicon film on a crystalline silicon substrate;
performing first light injection on the amorphous silicon film by adopting short-wave laser, wherein the wavelength of the short-wave laser is 250-650 nm, and then preparing a transparent conductive film on the amorphous silicon film;
performing second light injection on the transparent conductive film by using long-wave laser, wherein the wavelength of the long-wave laser is 950-1250 nm, and then preparing an electrode on the transparent conductive film; a kind of electronic device with high-pressure air-conditioning system
And carrying out third light injection on the amorphous silicon film, the transparent conductive film and the electrode by adopting laser overlapped by the short-wave laser and the long-wave laser.
2. The method for manufacturing a heterojunction solar cell according to claim 1, wherein the wavelength of the short-wave laser is 350nm to 450nm; and/or
The wavelength of the long-wave laser is 1000 nm-1100 nm.
3. The method of claim 1, wherein the process conditions for the first light injection are:
hydrogen is used as medium gas, light injection is carried out at 160-220 ℃, the illumination intensity is 1 sun-20 sun, and the illumination time is 10-180 s.
4. The method of fabricating a heterojunction solar cell as claimed in claim 3, wherein the process conditions of the first light injection are:
hydrogen is used as medium gas, light injection is carried out at 180-190 ℃, the illumination intensity is 2-6 suns, and the illumination time is 100-120 s.
5. The method of fabricating a heterojunction solar cell as claimed in claim 1, wherein the process conditions of the second light injection are:
hydrogen is used as medium gas, light injection is carried out at 155-220 ℃, the illumination intensity is 1 sun-40 sun, and the illumination time is 200-800 s.
6. The method of claim 5, wherein the second light injection process conditions are:
hydrogen is used as medium gas, light injection is carried out at 155-165 ℃, the illumination intensity is 5-15 suns, and the illumination time is 450-550 s.
7. The method of fabricating a heterojunction solar cell as claimed in claim 1, wherein the process conditions of the third light injection are:
hydrogen is used as medium gas, light injection is carried out at 160-220 ℃, the illumination intensity is 1 sun-80 sun, and the illumination time is 10-180 s.
8. The method of claim 7, wherein the process conditions for the third light injection are:
hydrogen is used as medium gas, light injection is carried out at 185-195 ℃, the illumination intensity is 10-20 suns, and the illumination time is 80-120 s.
9. The method of fabricating a heterojunction solar cell as claimed in claim 1, wherein the fabricating an amorphous silicon thin film on a crystalline silicon substrate comprises the steps of:
preparing an intrinsic amorphous silicon film on a crystalline silicon substrate; a kind of electronic device with high-pressure air-conditioning system
Preparing a doped amorphous silicon film on the surface of the intrinsic amorphous silicon film, which is away from the crystalline silicon substrate, wherein the doped amorphous silicon film is an N-type amorphous silicon film or a P-type amorphous silicon film.
10. The method for manufacturing a heterojunction solar cell as claimed in claim 9, wherein the thickness of the intrinsic amorphous silicon thin film is 5nm to 10nm; and/or
The thickness of the N-type amorphous silicon film is 5 nm-15 nm; and/or
The thickness of the P-type amorphous silicon film is 10 nm-20 nm; and/or
The thickness of the transparent conductive film is 90 nm-110 nm.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0856005A (en) * | 1994-08-11 | 1996-02-27 | Fuji Electric Co Ltd | Manufacturing method for thin film solar battery |
| KR20140110177A (en) * | 2013-03-05 | 2014-09-17 | 엘지전자 주식회사 | Bifacial solar cell |
| CN106206826A (en) * | 2015-04-30 | 2016-12-07 | 中海阳能源集团股份有限公司 | A kind of efficiently heterojunction solar battery and preparation method thereof |
| CN110634961A (en) * | 2018-05-31 | 2019-12-31 | 福建金石能源有限公司 | Double-sided passivation back contact heterojunction solar cell and manufacturing method thereof |
| CN112397379A (en) * | 2020-11-16 | 2021-02-23 | 浙江大学 | Laser local annealing amorphous polycrystalline composite photoelectron integration method |
| CN113410328A (en) * | 2021-05-12 | 2021-09-17 | 北京工业大学 | Crystalline silicon heterojunction solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
| US20130130430A1 (en) * | 2011-05-20 | 2013-05-23 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
-
2022
- 2022-02-25 CN CN202210180572.7A patent/CN114597290B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0856005A (en) * | 1994-08-11 | 1996-02-27 | Fuji Electric Co Ltd | Manufacturing method for thin film solar battery |
| KR20140110177A (en) * | 2013-03-05 | 2014-09-17 | 엘지전자 주식회사 | Bifacial solar cell |
| CN106206826A (en) * | 2015-04-30 | 2016-12-07 | 中海阳能源集团股份有限公司 | A kind of efficiently heterojunction solar battery and preparation method thereof |
| CN110634961A (en) * | 2018-05-31 | 2019-12-31 | 福建金石能源有限公司 | Double-sided passivation back contact heterojunction solar cell and manufacturing method thereof |
| CN112397379A (en) * | 2020-11-16 | 2021-02-23 | 浙江大学 | Laser local annealing amorphous polycrystalline composite photoelectron integration method |
| CN113410328A (en) * | 2021-05-12 | 2021-09-17 | 北京工业大学 | Crystalline silicon heterojunction solar cell |
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