JPH0856005A - Manufacturing method for thin film solar battery - Google Patents

Manufacturing method for thin film solar battery

Info

Publication number
JPH0856005A
JPH0856005A JP6189148A JP18914894A JPH0856005A JP H0856005 A JPH0856005 A JP H0856005A JP 6189148 A JP6189148 A JP 6189148A JP 18914894 A JP18914894 A JP 18914894A JP H0856005 A JPH0856005 A JP H0856005A
Authority
JP
Japan
Prior art keywords
electrode layer
solar cell
substrate
laser
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6189148A
Other languages
Japanese (ja)
Other versions
JP3111820B2 (en
Inventor
Kiyoo Saito
清雄 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP06189148A priority Critical patent/JP3111820B2/en
Publication of JPH0856005A publication Critical patent/JPH0856005A/en
Application granted granted Critical
Publication of JP3111820B2 publication Critical patent/JP3111820B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To make a through hole in a columnar shape to prevent a layer on the opposite side from being damaged by using a laser beam, which does not transmit a high-molecule material or a high-molecule substrate, in processing to drill the high-molecule substrate or to separate a layer on the high-molecule substrate. CONSTITUTION:A high-molecule substrate 1 is subjected to the fourth harmonic of a YAG laser to make through holes 21, 22, 23, and 24, and a lower electrode layer 4 is formed on the surface of the substrate 1 and a counter electrode layer 7 on the reverse side by Ag sputtering. Then, through holes 31, 32, 33, and 34 are produced again by the laser technique using the fourth harmonic of the YAG laser to form an a-Si layer 5 and a transparent electrode layer 6 successively by the Plasma CDV technique. Next, after three layers of the transparent electrode layer 7, the a-Si layer 5, and the lower electrode layer 4 are simultaneously separated into strips by means of grooves 81 and 82 through a laser scribe method using the fourth harmonic of the YAG laser, the counter electrode layer 7 is likewise separated by grooves 83 and 84 through the laser scribe method.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、アモルファスシリコン
等を主成分とする薄膜半導体を用いた直列接続型の薄膜
太陽電池の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a series-connected thin film solar cell using a thin film semiconductor containing amorphous silicon as a main component.

【0002】[0002]

【従来の技術】原料ガスのグロー放電分解や光CVDに
より形成されるアモルファス半導体薄膜は、気相成長法
で形成できるために、大面積化が容易であること、また
形成温度が低いために樹脂フィルムのような可とう性を
有する基板を用いることができることなどの特徴を有し
ている。こうしたアモルファス半導体薄膜を用いたアモ
ルファス太陽電池サブモジュールは、単位アモルファス
太陽電池を電気的に直列接続することにより取出し電圧
を設定している。この直列接続の形成は、基板の片面上
に成膜したアモルファス太陽電池を構成するアモルファ
ス半導体薄膜とそれを挟む金属、透明電極層よりなる各
層をYAGレーザ光により分離加工し、分離された金属
電極層と隣接した透明電極層を電気的に接続することに
より形成していた。
2. Description of the Related Art An amorphous semiconductor thin film formed by glow discharge decomposition of a raw material gas or photo-CVD can be formed by a vapor phase growth method, so that it is easy to increase the area and the formation temperature is low. It is characterized in that a flexible substrate such as a film can be used. In the amorphous solar cell submodule using such an amorphous semiconductor thin film, the extraction voltage is set by electrically connecting unit amorphous solar cells in series. The formation of this series connection is performed by separating each layer of the amorphous semiconductor thin film forming the amorphous solar cell formed on one side of the substrate, the metal sandwiching the amorphous semiconductor thin film, and the transparent electrode layer by YAG laser light, and separating the separated metal electrodes. It was formed by electrically connecting the transparent electrode layer adjacent to the layer.

【0003】さらに、本出願人の出願にかかる特願平5
−220870号明細書に記載されたアモルファス太陽
電池では、絶縁性基板の片面上に形成された各層からな
る単位アモルファス太陽電池の接続を、基板の貫通孔を
通じて表面側の電極層と接続された基板裏面の対面電極
層を用いて行っている。
Furthermore, Japanese Patent Application No. Hei.
-220870 describes an amorphous solar cell, in which a unit amorphous solar cell composed of each layer formed on one surface of an insulating substrate is connected to a surface side electrode layer through a through hole of the substrate. This is done using the facing electrode layer on the back surface.

【0004】[0004]

【発明が解決しようとする課題】従来、絶縁性基板の片
面に薄膜を積層し形成する薄膜太陽電池の分離加工に用
いていたYAGレーザ加工法は、安定性が良く生産性が
高い。しかし、生産性が高く多用途に使用できる優れた
直列接続構造として、上記の明細書に記載されているよ
うに、基板に貫通孔を開け、この貫通孔を介して絶縁性
基板の両面に形成される電極を接続する構造のものを作
製する場合、従来のYAGレーザ加工法を適用すること
が困難であることがわかった。それは、基板に用いてい
た耐熱性高分子基板を、分離加工に用いていたYAGレ
ーザの基本波および第二高調波の波長の光が透過してし
まい、片面を加工除去している際に反対面も透過したレ
ーザ光により損傷するという問題が起こったからであ
る。図2に示すように、可視光に対して透光性を有する
高分子基板1上に形成されたITO層6、アモルファス
シリコン (以下a−Siと記す) 層5、金属電極層4
に、YAGレーザの基本波(波長1.06μm) あるいは
第二高調波 (波長0.53μm) を用いて同時に溝8を加
工すると、このレーザ光により対面電極層7に損傷9が
生じたりする。逆に対面電極層7を加工する際に反対面
にある太陽電池構造が損傷され、太陽電池の特性が低下
する。これは、パルスレーザで分離加工を行うと必ずレ
ーザパルスを重ねる必要があり、加工レーザ光を透過す
る基板を用いると、この重複部のレーザ光が基板の反対
側に達し、基板の反対面にある膜を損傷するからであ
る。
The YAG laser processing method, which has been conventionally used for the separation processing of a thin film solar cell in which a thin film is laminated on one surface of an insulating substrate, has good stability and high productivity. However, as an excellent series connection structure with high productivity and versatility, as described in the above specification, a through hole is formed in the substrate, and the insulating substrate is formed on both sides through the through hole. It has been found that it is difficult to apply the conventional YAG laser processing method in the case of producing a structure in which the electrodes to be connected are connected. This is because the heat-resistant polymer substrate used for the substrate transmits the light of the wavelength of the fundamental wave and the second harmonic of the YAG laser used for separation processing, which is the opposite when processing and removing one side. This is because there is a problem that the surface is also damaged by the transmitted laser light. As shown in FIG. 2, an ITO layer 6, an amorphous silicon (hereinafter referred to as a-Si) layer 5, and a metal electrode layer 4 formed on a polymer substrate 1 having a property of transmitting visible light.
When the grooves 8 are simultaneously processed by using the fundamental wave (wavelength 1.06 μm) or the second harmonic (wavelength 0.53 μm) of the YAG laser, the laser light may cause damage 9 to the facing electrode layer 7. Conversely, when the facing electrode layer 7 is processed, the solar cell structure on the opposite surface is damaged and the characteristics of the solar cell deteriorate. This is because it is necessary to overlap laser pulses when performing separation processing with a pulse laser, and when a substrate that transmits the processing laser light is used, the laser light in this overlapping part reaches the opposite side of the substrate and This is because it damages a certain film.

【0005】また、耐熱性高分子基板に貫通孔を開ける
のにYAGレーザ加工法を適用すると、YAGレーザの
基本波および第二高調波は、使用している高分子材料に
よる吸収率が小さく、例えばYAGレーザの第二高調波
(波長0.53μm) を最大0.4mJ/パルスの加工レー
ザ出力で約2秒照射し、図3に示すように高分子基板1
に直径100μmの貫通孔11の孔開け加工を行うと、
孔開け形状が傾斜面12を有する摺り鉢状になってしま
う。そのため、太陽電池セルの短絡が発生したり、貫通
孔を通じて接続される、金属電極層とITO層、金属電
極層と対面電極層の接続が悪くなり接続抵抗が高くな
る。また、摺り鉢状の部分でa−Si層が金属電極層を
十分に被覆できないために、金属電極層とITO層が短
絡するといった不良がおこるという問題があった。
Further, when the YAG laser processing method is applied to open the through hole in the heat resistant polymer substrate, the fundamental wave and the second harmonic of the YAG laser have a small absorptance due to the polymer material used, For example, the second harmonic of a YAG laser
Irradiate (wavelength 0.53 μm) with a processing laser output of 0.4 mJ / pulse at the maximum for about 2 seconds, and as shown in FIG.
When the through hole 11 having a diameter of 100 μm is drilled,
The perforated shape becomes a mortar shape having the inclined surface 12. Therefore, a short circuit occurs in the solar battery cell or the connection between the metal electrode layer and the ITO layer or between the metal electrode layer and the facing electrode layer, which is connected through the through hole, becomes poor and the connection resistance increases. In addition, since the a-Si layer cannot sufficiently cover the metal electrode layer in the mortar-like portion, there is a problem that a short circuit occurs between the metal electrode layer and the ITO layer.

【0006】本発明の目的は、上述の問題を解決し、高
分子基板に円柱状貫通孔を開けることのできる薄膜太陽
電池の製造方法、および高分子基板の一面上の層を分離
加工する際に、他面上の層を損傷することのない薄膜太
陽電池の製造方法を提供することにある。
An object of the present invention is to solve the above-mentioned problems, to manufacture a thin film solar cell capable of forming a cylindrical through hole in a polymer substrate, and to separate and process a layer on one surface of the polymer substrate. Another object of the present invention is to provide a method for manufacturing a thin film solar cell which does not damage the layer on the other surface.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明は、絶縁性高分子基板の一面上に順次積層
された下部電極層、半導体薄膜よりなる光電変換層およ
び透明電極層から構成される単位太陽電池の接続が、高
分子基板の他面上に形成され、前記下部電極層および透
明電極層と基板に開けられた貫通孔を通る導体によって
接続された対面電極層を介して行われる薄膜太陽電池の
製造方法において、高分子基板に貫通孔を開ける加工
に、基板の高分子材料を実質的に透過しないレーザ光を
用いるものとする。あるいは、下部電極層、光電変換層
および透明電極層からなる積層体の単位太陽電池への分
離加工ならびに対面電極層の分離加工に、高分子基板を
実質的に透過しないレーザ光を用いるものとする。高分
子材料あるいは高分子基板を実質的に透過しないレーザ
光として波長の短いレーザ光を用いることが有効で、そ
のようなレーザ光としてYAGレーザの第四高長波を用
いるのがよい。分離加工の場合には、基板の厚さを基板
の高分子材料のレーザ光の透過率に対応してレーザ光が
実質的に透過しないために必要な厚さ以上にすることが
良い。レーザ光の加工レーザ出力をレーザ光が高分子基
板を実質的に透過しない程度に低くすることも良い。高
導電率よりなる電極層を加工する際に、予め電極層の表
面を反射率の低い導電層によって覆っておくのが良く、
その反射率の低い導電層がCrあるいは酸化金属よりな
ることが良い。
In order to achieve the above object, the present invention provides a lower electrode layer, a photoelectric conversion layer comprising a semiconductor thin film, and a transparent electrode layer, which are sequentially laminated on one surface of an insulating polymer substrate. A unit solar cell composed of is formed on the other surface of the polymer substrate, and the lower electrode layer and the transparent electrode layer and the facing electrode layer connected by a conductor passing through a through hole formed in the substrate are interposed. In the method of manufacturing a thin-film solar cell performed as described above, laser light that does not substantially pass through the polymer material of the substrate is used for the processing of forming the through hole in the polymer substrate. Alternatively, laser light that does not substantially pass through the polymer substrate shall be used for separating the unit solar cell of the laminate including the lower electrode layer, the photoelectric conversion layer, and the transparent electrode layer into the unit solar cell and separating the facing electrode layer. . It is effective to use a laser beam having a short wavelength as the laser beam that does not substantially pass through the polymer material or the polymer substrate, and it is preferable to use the fourth high frequency wave of the YAG laser as such a laser beam. In the case of separation processing, it is preferable that the thickness of the substrate is set to be equal to or greater than the thickness required for substantially not transmitting the laser light in accordance with the laser light transmittance of the polymer material of the substrate. The processing laser output of the laser light may be lowered so that the laser light does not substantially pass through the polymer substrate. When processing an electrode layer having a high conductivity, it is preferable to cover the surface of the electrode layer with a conductive layer having a low reflectance in advance,
The conductive layer having a low reflectance is preferably made of Cr or metal oxide.

【0008】[0008]

【作用】レーザ加工により開けられる貫通孔が摺り鉢状
になるのは、レーザ光が照射部分の高分子材料を加熱す
るばかりでなく、高分子材料に吸収されないで散乱する
光が透過して照射部分近傍の高分子材料も加熱するため
である。従って、高分子材料を実質的に透過しないレー
ザ光を用いれば円柱状の貫通孔が得られる。またレーザ
による分離加工の際に、他面上の層が損傷するのは、高
分子基板を透過して基板の反対側にレーザ光が到達する
からである。従って、高分子基板を実質的にレーザ光が
透過しなければ、他面上の層が損傷することはない。
[Function] The through hole formed by laser processing has a mortar-like shape not only because the laser light heats the polymer material in the irradiated portion, but also when light scattered by the polymer material is transmitted without being absorbed. This is because the polymer material near the part is also heated. Therefore, a cylindrical through hole can be obtained by using laser light that does not substantially pass through the polymer material. Further, the layer on the other surface is damaged during the separation processing by the laser because the laser light reaches the opposite side of the substrate through the polymer substrate. Therefore, if the laser light is not substantially transmitted through the polymer substrate, the layers on the other surface will not be damaged.

【0009】高分子基板の透過率は、図4に示すように
波長に依存する。図の線41は50μmの厚さのポリイ
ミドフィルム、線42は厚さ100μmのポリエチレン
ナフタレートフィルムにおけるデータである。このよう
に短波長の光に対しては透過率は低下する。例えば、図
に示した0.53μmの波長のYAGレーザ第二高調波の
半分の0.26μmの波長のYAGレーザ第四高調波を用
いれば、円柱状の貫通孔が得られ、反対側の面の層の損
傷も生じない。
The transmittance of the polymer substrate depends on the wavelength as shown in FIG. Line 41 in the figure is data for a polyimide film having a thickness of 50 μm, and line 42 is data for a polyethylene naphthalate film having a thickness of 100 μm. In this way, the transmittance is reduced for light with a short wavelength. For example, if a YAG laser fourth harmonic of 0.26 μm, which is half of the YAG laser second harmonic of 0.53 μm shown in the figure, is used, a cylindrical through hole is obtained, and the opposite surface is obtained. There is no damage to the layers.

【0010】一面上の層の分離加工の際に他面上の層の
損傷を防ぐために高分子基板をレーザ光が実質的に透過
しないようにして損傷するエネルギーが到達しないよう
にすることは、レーザ光に対して透過率の高い材料の場
合には厚い基板を用いればよく、レーザ光の加工出力を
下げてもよい。後者の場合、被加工面の反射率が小さい
方が有利なので、高反射率、高導電率の金属電極層の加
工の際に表面を表面反射率の低い導電層によって覆って
も良い。
In order to prevent damage to the layer on the other surface during the separation processing of the layer on the one surface, it is necessary to prevent the laser light from substantially passing through the polymer substrate so that the energy for damage is not reached. In the case of a material having a high transmittance for laser light, a thick substrate may be used, and the processing output of laser light may be reduced. In the latter case, since it is advantageous that the surface to be processed has a low reflectance, the surface may be covered with a conductive layer having a low surface reflectance when processing the metal electrode layer having high reflectance and high conductivity.

【0011】[0011]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1 (a) 〜 (c) は、本発明により得られた薄
膜太陽電池サブモジュールの断面構造図、 (a) は平面
図、 (b) および (c) はそれぞれ (a) のA−A線、
B−B線断面図である。本実施例では、高分子基板1に
可とう性を有する膜厚50μmのポリイミドフィルムを
用いた。この基板を波長0.26μmで1kHz以上の高
速発振ができるYAGレーザの第四高調波により加工
し、金属電極を対面電極と接続するための第一貫通孔2
1,22,23,24を開け、次いで銀 (Ag) のスパ
ッタ法により基板1の表面に下部電極層4を、反対面に
対面電極層7を形成した。その後、透明電極を対面電極
と接続するための第二貫通孔31、32、33、34を
再度YAGレーザの第四高調波を用いるレーザ法により
開け、次いでプラズマCVD法によりa−Si層5、酸
化インジウム (以下ITOと記す) よりなる透明電極層
6を順次形成した。この結果、第一貫通孔21〜24を
埋めるAgにより下部電極層4が対面電極層7と接続さ
れ、第二貫通孔31〜34を埋めるITOにより透明電
極層6と対面電極層7が接続される。こうして積層した
薄膜太陽電池の透明電極層6、a−Si層5、下部電極
層4の三層を同時に、再度YAGレーザの第四高調波を
用いたレーザスクライブ法による溝81、82によって
短冊状に分離し、その後、対面電極層7を前記と同様の
レーザスクライブ法による溝83、84によって短冊状
に分離した。これにより、直列接続型a−Si太陽電池
サブモジュールを形成した。
Embodiments of the present invention will be described below with reference to the drawings. 1 (a) to 1 (c) are cross-sectional structural views of a thin-film solar cell submodule obtained by the present invention, (a) is a plan view, (b) and (c) are A-A of (a), respectively. line,
It is a BB line sectional view. In this example, a flexible polyimide film having a film thickness of 50 μm was used as the polymer substrate 1. This substrate is processed with the fourth harmonic of a YAG laser capable of high-speed oscillation of 1 kHz or more at a wavelength of 0.26 μm, and a first through hole 2 for connecting a metal electrode to a facing electrode 2
1, 2, 23, and 24 were opened, and then a lower electrode layer 4 was formed on the surface of the substrate 1 and a facing electrode layer 7 was formed on the opposite surface by a sputtering method of silver (Ag). Then, the second through holes 31, 32, 33, 34 for connecting the transparent electrode to the facing electrode are opened again by the laser method using the fourth harmonic of the YAG laser, and then the a-Si layer 5, by the plasma CVD method. The transparent electrode layer 6 made of indium oxide (hereinafter referred to as ITO) was sequentially formed. As a result, the lower electrode layer 4 is connected to the facing electrode layer 7 by Ag filling the first through holes 21 to 24, and the transparent electrode layer 6 and the facing electrode layer 7 are connected to each other by ITO filling the second through holes 31 to 34. It The transparent electrode layer 6, the a-Si layer 5, and the lower electrode layer 4 of the thin-film solar cell thus laminated are simultaneously stripped by the grooves 81, 82 by the laser scribing method using the fourth harmonic of the YAG laser. After that, the facing electrode layer 7 was separated into strips by the grooves 83 and 84 by the same laser scribing method as described above. This formed the serial connection type a-Si solar cell submodule.

【0012】上記の実施例で用いたYAGレーザの第四
高調波 (波長0.26μm) の光は、ポリイミド基板1を
透過しないので、レーザエネルギーを孔開け加工に有効
に活用できる。また、短波長のレーザ光は、加工表面付
近において吸収されるために、小さい空間に大きなエネ
ルギーを集中できる。このため、エキシマレーザ等の短
波長レーザと同様に熱加工でない、アブレーション (研
磨) 加工が行える。
Since the light of the fourth harmonic (wavelength 0.26 μm) of the YAG laser used in the above-mentioned embodiment does not pass through the polyimide substrate 1, the laser energy can be effectively utilized for punching. Further, the short wavelength laser light is absorbed in the vicinity of the processed surface, so that large energy can be concentrated in a small space. Therefore, like the short wavelength laser such as the excimer laser, the ablation (polishing) process can be performed instead of the thermal process.

【0013】図5は、このような短波長レーザで加工し
た加工孔の例の第一貫通孔21を示す。この図でわかる
ように、図3に示した従来のYAGレーザの第二高調波
で開けた加工孔11に比べ、アブレーション加工で開け
た加工孔21は、加工端部が綺麗で、基板1の面に対し
垂直に加工できる。第二貫通孔31〜34の場合も同様
であった。高分子基板1としては、ポリイミド基板の他
に、同じ効果が得られる基板としては、ポリエーテルサ
ルフォン (PES) 基板やアラミド基板がある。
FIG. 5 shows a first through hole 21 as an example of a processed hole processed by such a short wavelength laser. As can be seen from this figure, compared to the processed hole 11 formed by the second harmonic of the conventional YAG laser shown in FIG. Can be machined perpendicular to the surface. The same applies to the case of the second through holes 31 to 34. As the polymer substrate 1, in addition to a polyimide substrate, a substrate having the same effect can be a polyether sulfone (PES) substrate or an aramid substrate.

【0014】YAGレーザの第四高調波のほかに、高分
子基板を透過しない短波長のレーザとしては、エキシマ
レーザが考えられるが、エキシマレーザの発振周波数
は、本実施例で用いたYAGレーザの第四高調波の1/
10〜1/100程度であり、それだけ孔開け加工時間
が必要となる。これらのことからフィルム基板に孔開け
加工を行うには、本試作で用いたYAGレーザの第四高
調波のような、使用する高分子基板がレーザ光を透過し
ない波長を有し、高速発振できるレーザを用いることが
必要である。
In addition to the fourth harmonic of the YAG laser, an excimer laser can be considered as a short-wavelength laser that does not pass through the polymer substrate. The excimer laser has an oscillation frequency of that of the YAG laser used in this embodiment. 1 / fourth harmonic
It is about 10 to 1/100, and the time required for drilling is accordingly increased. From these things, when making a hole in the film substrate, the polymer substrate used, such as the fourth harmonic of the YAG laser used in this prototype, has a wavelength that does not transmit laser light, and high-speed oscillation is possible. It is necessary to use a laser.

【0015】また、このYAGレーザの第四高調波の波
長の光は、本実施例で用いたポリイミド等の可視光に対
し透光性を有する高分子基板を透過しないため、このよ
うな可視光に対し透光性を有する高分子基板の両面に薄
膜を形成する構造の片面に形成した膜のレーザ加工にお
いて特に有効である。図1に示す構造の分離溝81〜8
4を加工するのに、YAGレーザの基本波 (波長1.06
μm) あるいは第二高調波 (波長0.53μm) を用いる
と、図1と同様の平面図、断面図である図6に示すよう
に、基板1の反対側に損傷9を生ずるが、上述のように
YAGレーザの第四高調波を用いると、レーザ光がポリ
イミド等の可視光に対し透光性を有する高分子基板を透
過しないため、反対面の薄膜の損傷9が生ずることがな
い。また、従来のYAGレーザと同様に高速発振できる
ためにパターニング速度も速く、短時間でレーザ加工が
行える。このYAGレーザの第四高調波に薄膜を形成す
る構造の太陽電池の製作が可能となった。
Further, since the light of the fourth harmonic wavelength of this YAG laser does not pass through the polymer substrate having a translucency with respect to visible light such as polyimide used in this embodiment, such visible light is used. On the other hand, it is particularly effective in laser processing of a film formed on one surface of a structure in which thin films are formed on both surfaces of a polymer substrate having a light-transmitting property. Separation grooves 81 to 8 having the structure shown in FIG.
4 is processed by the fundamental wave of YAG laser (wavelength 1.06
.mu.m) or a second harmonic (wavelength 0.53 .mu.m) causes damage 9 on the opposite side of the substrate 1 as shown in FIG. 6 which is a plan view and a sectional view similar to FIG. As described above, when the fourth harmonic of the YAG laser is used, the laser light does not pass through the polymer substrate such as polyimide that has a property of transmitting visible light, so that damage 9 on the thin film on the opposite surface does not occur. Further, since it can oscillate at high speed like the conventional YAG laser, the patterning speed is fast, and laser processing can be performed in a short time. It has become possible to manufacture a solar cell having a structure in which a thin film is formed on the fourth harmonic of this YAG laser.

【0016】しかし、YAGレーザの第二高調波を用い
ても反対面の薄膜を損傷させずに加工できる方法があ
る。図7はそのような方法を用いた実施例を示し、高分
子基板として膜厚100μmのポリイミドフィルムを用
い、対面電極層7に溝8をレーザ光10により形成し
た。図8は、この場合の加工幅とレーザ加工出力との関
係を示し、○印は対面電極層7の加工幅であり、□印は
基板1の反対面上の下部電極層4、a−Si層5、透明
電極層6の加工幅である。図に示すように反対面の各層
には影響がない。これは、YAGレーザの第二高調波に
対するポリイミドの透過率が3%と低く、また膜厚が1
00μmと十分厚いため、基板の透過率が微小になるか
らである。比較のため、図9に示すように同じ光に対す
る透過率が70%と高く、厚さが50μmと薄いアラミ
ド基板11を用いた場合には、対面電極層7に0.15m
J/パルスおよび0.2mJ/パルスのレーザ加工出力で
レーザ光10を照射した場合、反対面上の下部電極層
4、a−Si層5、透明電極層7が加工され、溝80が
形成された。従って透過率が高い場合には、それに対応
して基板の厚さを厚くする必要がある。
However, there is a method in which the second harmonic wave of the YAG laser can be used for processing without damaging the thin film on the opposite surface. FIG. 7 shows an example using such a method. A polyimide film having a film thickness of 100 μm was used as a polymer substrate, and grooves 8 were formed in the facing electrode layer 7 by laser light 10. FIG. 8 shows the relationship between the processing width and the laser processing output in this case, where the ◯ mark is the processing width of the facing electrode layer 7, and the □ mark is the lower electrode layer 4, a-Si on the opposite surface of the substrate 1. It is the processing width of the layer 5 and the transparent electrode layer 6. As shown, the layers on the opposite side are not affected. This is because the transmittance of polyimide for the second harmonic of the YAG laser is as low as 3%, and the film thickness is 1
This is because the transmittance of the substrate becomes minute because it is sufficiently thick as 00 μm. For comparison, as shown in FIG. 9, when the aramid substrate 11 having a high transmittance of 70% for the same light and a thickness of 50 μm is used, the facing electrode layer 7 has a thickness of 0.15 m.
When the laser beam 10 is irradiated with the laser processing output of J / pulse and 0.2 mJ / pulse, the lower electrode layer 4, the a-Si layer 5, and the transparent electrode layer 7 on the opposite surface are processed to form the groove 80. It was Therefore, when the transmittance is high, it is necessary to correspondingly increase the thickness of the substrate.

【0017】同様に、反対面側の薄膜に影響を与えない
方法として、加工レーザ出力を低出力化する方法があ
る。対面電極層7は、通常下部電極層4と導電率の高い
Agなどで同時に形成される。しかし、Agは反射率が
約90%であるため、このAgに溝83、84を形成す
るのに要する加工レーザ出力が大きくなる。そこで、図
10に示す実施例では、アラミド基板11の裏面に形成
した厚さ2000ÅのAg対面電極層7の上を厚さ50
0Åのクロム膜71により覆った。これにより表面反射
率が約40%に低下した。この結果、クロム膜71を形
成しないときには、Ag層7に、50μmの加工幅の溝
83、84を形成するのに、0.15mJ/パルスの加工
レーザ出力が必要であったが、低反射率Cr膜を形成す
ることにより0.025mJ/パルスの低いレーザ出力が
加工できにようになった。図11は、クロム膜71を形
成しない場合と形成した場合の加工幅とレーザ加工出力
との関係をそれぞれ線12、13で示す。このように低
いレーザ出力で加工できるため、パルスを重ねたとき
に、反対面に達するレーザエネルギーが微小になり、片
面だけを選択加工することができた。また、この効果
は、クロム等の金属電極の他に、酸化亜鉛や酸化インジ
ウム等の透明電極でも同様の効果がある。特に、透明電
極膜は、a−Si層5の下の金属よりなる下部電極層4
の上に形成しても薄膜太陽電池の性能を損なうことがな
いため、金属電極層4を透明導電膜で覆うことも下部電
極層をレーザ加工するときには有効である。
Similarly, as a method of not affecting the thin film on the opposite surface side, there is a method of reducing the processing laser output. The facing electrode layer 7 is usually formed at the same time as the lower electrode layer 4 with Ag having a high conductivity. However, since Ag has a reflectance of about 90%, the processing laser output required to form the grooves 83 and 84 in this Ag becomes large. Therefore, in the embodiment shown in FIG. 10, the thickness of the Ag facing electrode layer 7 having a thickness of 2000 Å formed on the back surface of the aramid substrate 11 is reduced to 50 mm.
It was covered with a 0Å chromium film 71. This reduced the surface reflectance to about 40%. As a result, when the chromium film 71 was not formed, a processing laser output of 0.15 mJ / pulse was required to form the grooves 83 and 84 having a processing width of 50 μm in the Ag layer 7, but the low reflectance By forming the Cr film, a laser output as low as 0.025 mJ / pulse can be processed. FIG. 11 shows the relation between the processing width and the laser processing output when the chromium film 71 is not formed and when it is formed, by lines 12 and 13, respectively. Since processing can be performed with such a low laser output, when the pulses are overlapped, the laser energy reaching the opposite surface becomes minute, and only one surface can be selectively processed. In addition to the metal electrode made of chromium or the like, the same effect can be obtained by a transparent electrode made of zinc oxide or indium oxide. In particular, the transparent electrode film is the lower electrode layer 4 made of metal under the a-Si layer 5.
Since the performance of the thin-film solar cell is not impaired even if it is formed on the above, covering the metal electrode layer 4 with a transparent conductive film is also effective when laser processing the lower electrode layer.

【0018】[0018]

【発明の効果】本発明によれば、高分子基板の孔開け加
工あるいは高分子基板上の層の分離加工する際に、高分
子材料あるいは高分子基板を透過しないレーザ光を用い
ることにより、貫通孔の形状の円柱状化や、反対面の層
の損傷防止が可能になった。この結果、絶縁性高分子基
板を用いた薄膜太陽電池の接続孔を1秒/個以下の短時
間で形成することができ、薄膜太陽電池の製造時間を短
縮できた。また、両面に薄膜を形成する構造の薄膜太陽
電池の高品質、高速加工が可能となった。
According to the present invention, a laser beam that does not pass through a polymer material or a polymer substrate is used for punching a polymer substrate or separating layers on the polymer substrate. It became possible to make the hole shape cylindrical and prevent damage to the layer on the opposite side. As a result, the connection holes of the thin film solar cell using the insulating polymer substrate can be formed in a short time of 1 second / piece or less, and the manufacturing time of the thin film solar cell can be shortened. In addition, high quality and high speed processing of thin film solar cells with a structure in which thin films are formed on both sides has become possible.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による薄膜太陽電池の一部分
を示し、 (a) が平面図、 (b) が (a) のA−A線断
面図、 (c) が (a) のB−B線断面図
FIG. 1 shows a part of a thin film solar cell according to an embodiment of the present invention, (a) is a plan view, (b) is a sectional view taken along the line AA of (a), and (c) is B of (a). -B line cross section

【図2】従来の薄膜太陽電池の製造方法により生ずる欠
陥を示す断面図
FIG. 2 is a sectional view showing defects caused by a conventional method for manufacturing a thin film solar cell.

【図3】従来の薄膜太陽電池の製造方法により加工され
た貫通孔の斜視図
FIG. 3 is a perspective view of a through hole processed by a conventional method for manufacturing a thin film solar cell.

【図4】高分子基板の透過率と光の波長との関係線図FIG. 4 is a diagram showing the relationship between the transmittance of a polymer substrate and the wavelength of light.

【図5】本発明の実施例の方法で加工された貫通孔の斜
視図
FIG. 5 is a perspective view of a through hole processed by the method of the embodiment of the present invention.

【図6】従来の方法で製造された薄膜太陽電池を示し、
(a) が平面図、 (b) が (a) のC−C線断面図、
(c) が (a) のD−D線断面図
FIG. 6 shows a thin film solar cell manufactured by a conventional method,
(a) is a plan view, (b) is a sectional view taken along line CC of (a),
(c) is a sectional view taken along line DD of (a).

【図7】本発明の実施例の方法で対面電極層の分離加工
を施したあとの断面図
FIG. 7 is a cross-sectional view after the facing electrode layer is separated by the method according to the embodiment of the present invention.

【図8】図7の加工の際の加工幅とレーザ加工出力の関
係線図
FIG. 8 is a relationship diagram of a processing width and a laser processing output during the processing of FIG.

【図9】反対面上の層の切断を生ずる比較例の分離加工
を施したあとの断面図
FIG. 9 is a cross-sectional view after performing a separation process of a comparative example that causes cutting of a layer on the opposite surface.

【図10】本発明の別の実施例による薄膜太陽電池の断
面図
FIG. 10 is a cross-sectional view of a thin film solar cell according to another embodiment of the present invention.

【図11】図10の実施例と比較例の方法における加工
幅とレーザ加工出力との関係線図
11 is a diagram showing the relationship between the processing width and the laser processing output in the methods of the example and the comparative example of FIG.

【符号の説明】[Explanation of symbols]

1 高分子基板 11 アラミド基板 21、22、23、24 第一貫通孔 31、32、33、34 第二貫通孔 4 下部電極層 5 a−Si層 6 透明電極層 7 対面電極層 71 クロム膜 81、82、83、84 溝 10 レーザ光 1 Polymer Substrate 11 Aramid Substrate 21, 22, 23, 24 First Through Hole 31, 32, 33, 34 Second Through Hole 4 Lower Electrode Layer 5 a-Si Layer 6 Transparent Electrode Layer 7 Facing Electrode Layer 71 Chromium Film 81 , 82, 83, 84 Groove 10 Laser light

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】絶縁性高分子基板の一面上に順次積層され
た下部電極層、半導体薄膜よりなる光電変換層および透
明電極層から構成される単位太陽電池の接続が、高分子
基板の他面上に形成され、前記下部電極層および透明電
極層と基板に開けられた貫通孔を通る導体によって接続
された対面電極層を介して行われる薄膜太陽電池の製造
方法において、高分子基板に貫通孔を開ける加工に基板
の高分子材料を実質的に透過しないレーザ光を用いるこ
とを特徴とする薄膜太陽電池の製造方法。
1. A unit solar cell comprising a lower electrode layer, a photoelectric conversion layer made of a semiconductor thin film, and a transparent electrode layer, which are sequentially laminated on one surface of an insulating polymer substrate, is connected to the other surface of the polymer substrate. In the method for manufacturing a thin-film solar cell, which is formed via a facing electrode layer formed on the lower electrode layer and the transparent electrode layer and connected by a conductor passing through a through hole formed in the substrate, the through hole is formed in the polymer substrate. A method for manufacturing a thin-film solar cell, characterized in that a laser beam that does not substantially pass through a polymer material of a substrate is used for the process of opening.
【請求項2】基板の高分子材料を実質的に透過しないレ
ーザ光として波長の短いレーザ光を用いる請求項1記載
の薄膜太陽電池の製造方法。
2. The method for producing a thin film solar cell according to claim 1, wherein a laser beam having a short wavelength is used as the laser beam which does not substantially pass through the polymer material of the substrate.
【請求項3】絶縁性高分子基板の一面上に順次積層され
た下部電極層、半導体薄膜よりなる光電変換層および透
明電極層から構成される単位太陽電池の接続が、高分子
基板の他面上に形成され、前記下部電極層および透明電
極層と基板に開けられた貫通孔を通る導体によって接続
された対面電極層を介して行われる薄膜太陽電池の製造
方法において、下部電極層、光電変換層および透明電極
層からなる積層体の単位太陽電池への分離加工ならびに
対面電極層の分離加工に高分子基板を実質的に透過しな
いレーザ光を用いることを特徴とする薄膜太陽電池の製
造方法。
3. A unit solar cell composed of a lower electrode layer, a photoelectric conversion layer made of a semiconductor thin film, and a transparent electrode layer, which are sequentially laminated on one surface of an insulating polymer substrate, is connected to the other surface of the polymer substrate. In the method for manufacturing a thin film solar cell, which is formed on the lower electrode layer and the transparent electrode layer and the facing electrode layer connected by the conductor passing through the through hole formed in the substrate, the lower electrode layer, the photoelectric conversion A method for manufacturing a thin-film solar cell, characterized in that laser light that does not substantially pass through a polymer substrate is used for separation processing of a laminated body including layers and transparent electrode layers into unit solar cells and separation processing of facing electrode layers.
【請求項4】高分子基板を実質的に透過しないレーザ光
として波長の短いレーザ光を用いる請求項3記載の薄膜
太陽電池の製造方法。
4. The method for producing a thin film solar cell according to claim 3, wherein a laser beam having a short wavelength is used as the laser beam which does not substantially pass through the polymer substrate.
【請求項5】レーザ光としてYAGレーザの第四高長波
を用いる請求項2あるいは4記載の薄膜太陽電池の製造
方法。
5. The method of manufacturing a thin film solar cell according to claim 2, wherein a fourth high frequency wave of a YAG laser is used as the laser light.
【請求項6】基板の厚さを基板の高分子材料のレーザ光
透過率に対応してレーザ光が実質的に透過しないために
必要な厚さ以上にする請求項3記載の薄膜太陽電池の製
造方法。
6. The thin-film solar cell according to claim 3, wherein the thickness of the substrate is set to be equal to or greater than the thickness required for substantially not transmitting the laser light in accordance with the laser light transmittance of the polymer material of the substrate. Production method.
【請求項7】レーザ光の加工レーザ出力をレーザ光が高
分子基板を実質的に透過しない程度に低くする請求項3
記載の薄膜太陽電池の製造方法。
7. The processing laser output of the laser light is lowered to such an extent that the laser light does not substantially pass through the polymer substrate.
A method for producing the thin film solar cell described.
【請求項8】高導電率の金属よりなる電極層を加工する
際に、予め電極層の表面を反射率の低い導電層によって
覆っておく請求項7記載の薄膜太陽電池の製造方法。
8. The method of manufacturing a thin film solar cell according to claim 7, wherein the surface of the electrode layer is previously covered with a conductive layer having a low reflectance when processing the electrode layer made of a metal having a high conductivity.
【請求項9】反射率の低い導電層がクロムよりなる請求
項7記載の薄膜太陽電池の製造方法。
9. The method for producing a thin film solar cell according to claim 7, wherein the conductive layer having a low reflectance is made of chromium.
【請求項10】反射率の低い導電層が酸化金属よりなる請
求項7記載の薄膜太陽電池の製造方法。
10. The method for manufacturing a thin-film solar cell according to claim 7, wherein the conductive layer having a low reflectance is made of metal oxide.
JP06189148A 1994-08-11 1994-08-11 Manufacturing method of thin film solar cell Expired - Lifetime JP3111820B2 (en)

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Publication Number Publication Date
JPH0856005A true JPH0856005A (en) 1996-02-27
JP3111820B2 JP3111820B2 (en) 2000-11-27

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JP2000353814A (en) * 1999-06-10 2000-12-19 Fuji Electric Co Ltd Manufacture of thin-film solar cell and film-forming state monitoring device of thin film
JP2002076406A (en) * 2000-08-31 2002-03-15 Fuji Electric Co Ltd Thin film solar battery and its manufacturing method
JP2009278145A (en) * 2001-11-10 2009-11-26 Fraunhofer Ges Zur Foerderung Der Angewandten Forschung Ev Solar cell with organic material in photovoltaic layer and method for production thereof
WO2012014549A1 (en) 2010-07-28 2012-02-02 富士電機株式会社 Thin film solar cell and manufacturing method thereof
KR20120094300A (en) * 2011-02-16 2012-08-24 엘지전자 주식회사 Solar cell and solar cell module
CN114597290A (en) * 2022-02-25 2022-06-07 通威太阳能(安徽)有限公司 Preparation method of heterojunction solar cell
CN114597290B (en) * 2022-02-25 2023-07-21 通威太阳能(安徽)有限公司 Preparation method of heterojunction solar cell

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