CN115548169B - Amorphous silicon solar cell with zinc gallium oxide as transparent electrode and preparation method thereof - Google Patents
Amorphous silicon solar cell with zinc gallium oxide as transparent electrode and preparation method thereof Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 101
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 7
- 239000011701 zinc Substances 0.000 title claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 83
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000002955 isolation Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 18
- XUHHZNLAPUWRHH-UHFFFAOYSA-N 3-butyl-1-methyl-1,2-dihydroimidazol-1-ium;methanesulfonate Chemical compound CS(O)(=O)=O.CCCCN1CN(C)C=C1 XUHHZNLAPUWRHH-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011259 mixed solution Substances 0.000 claims abstract description 10
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 8
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 239000002608 ionic liquid Substances 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 7
- 238000005406 washing Methods 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 28
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical group [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 238000005286 illumination Methods 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 27
- 238000002791 soaking Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005269 aluminizing Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention belongs to the technical field of solar cell preparation, and particularly relates to an amorphous silicon solar cell taking zinc gallium oxide as a transparent electrode and a preparation method thereof. The preparation method of the solar cell provided by the invention comprises the following steps: plating a front electrode layer on a glass substrate, and then performing texturing and cleaning to obtain a substrate; scribing an isolation groove on a front electrode layer of a substrate by using laser, sequentially depositing a P-type amorphous silicon layer and a buffer layer on the substrate, immersing the substrate in a mixed solution of 1-butyl-3-methylimidazole mesylate ionic liquid and ethanol, and then placing the substrate in a hydrogen sulfide atmosphere for laser irradiation and washing to obtain a cleaned substrate; and sequentially depositing an I-type amorphous silicon layer and an N-type amorphous silicon layer on the buffer layer, and then forming a back electrode layer on the N-type amorphous silicon layer to obtain the solar cell. The method can effectively improve the open-circuit voltage and the photoelectric conversion efficiency of the battery.
Description
Technical Field
The invention belongs to the technical field of solar cell preparation, and particularly relates to an amorphous silicon solar cell taking zinc gallium oxide as a transparent electrode and a preparation method thereof.
Background
Solar energy is used as a clean energy source, and a certain device is needed to convert the energy into the electric energy required by us. Among them, solar cells are more commonly used. The basic working principle of the solar cell is that when sunlight irradiates the surface of a cell material, photon energy is absorbed by carriers in the cell, so that the distribution condition of the carriers in the cell is changed, voltage is generated, and current is generated after the positive electrode and the negative electrode are connected. The solar cells are divided into amorphous silicon thin film solar cells and crystalline silicon solar cells, and currently amorphous silicon thin film solar cells are mainly divided into strong light type and weak light type, and weak light type amorphous silicon thin film cells are mainly used under indoor weak light or medium strong light conditions.
The existing weak light type amorphous silicon solar cell mainly comprises a front electrode layer, an amorphous silicon layer and a back electrode layer, wherein the amorphous silicon layer is generally composed of a P-type amorphous silicon layer, an I-type amorphous silicon layer and an N-type amorphous silicon layer, however, the photoelectric conversion efficiency of the existing weak light type amorphous silicon solar cell is lower, in order to improve the photoelectric conversion efficiency of the cell, a silicon-carbon buffer layer is added between the P-type amorphous silicon layer and the I-type amorphous silicon layer, although the photoelectric conversion efficiency of the cell is improved to a certain extent, defects are generated between the silicon-carbon buffer layer and an interface of the I-type amorphous silicon layer, the defects can influence the recombination of photo-generated current, and further the open-circuit voltage of the cell is lower, and meanwhile, the improvement of the photoelectric conversion efficiency of the cell can be further limited.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defect that the open-circuit voltage of the battery is lower due to the existence of the silicon-carbon buffer layer in the preparation process of the solar battery, and the improvement of the photoelectric conversion efficiency of the battery is further limited, so that the amorphous silicon solar battery taking zinc gallium oxide as a transparent electrode and the preparation method thereof are provided.
In order to solve the problems, the scheme of the invention is as follows:
a preparation method of a solar cell comprises the following steps:
1) Plating a front electrode layer on a glass substrate, and then performing texturing and cleaning to obtain a substrate;
2) Scribing isolation grooves on the front electrode layer of the substrate by utilizing laser to obtain a substrate with isolation groove patterns;
3) Sequentially depositing a P-type amorphous silicon layer and a buffer layer on the substrate obtained in the step 2), then immersing the substrate in a mixed solution of 1-butyl-3-methylimidazole mesylate ionic liquid and ethanol, taking out the substrate after the immersion is finished, then placing the substrate in a hydrogen sulfide atmosphere to perform laser irradiation at a light source wavelength of 480nm, and washing the substrate with ethanol and deionized water sequentially after the laser irradiation is finished to obtain a cleaned substrate;
4) And 3) sequentially depositing an I-type amorphous silicon layer and an N-type amorphous silicon layer on the buffer layer of the cleaned substrate obtained in the step 3), then scribing isolation grooves on the N-type amorphous silicon layer by utilizing laser, and then forming a back electrode layer on the N-type amorphous silicon layer to obtain the solar cell.
Preferably, the mass ratio of the 1-butyl-3-methylimidazole mesylate to the ethanol in the mixed solution of the 1-butyl-3-methylimidazole mesylate ionic liquid and the ethanol is 1: (0.7-1.2).
Preferably, the soaking temperature is 25-35 ℃ and the soaking time is 5-20min.
Preferably, the irradiation intensity of the laser irradiation is 450-500mW/cm 2 The illumination time is 15-25s.
Preferably, the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 10-25 nanometers, the buffer layer is a carbon silicon buffer layer, and the thickness is 2-15 nanometers.
Preferably, the I-type amorphous silicon layer is a hydrogenated amorphous silicon film with the thickness of 450-550 nanometers, and the N-type amorphous silicon layer is a phosphorus-doped hydrogenated amorphous silicon film with the thickness of 30-40 nanometers.
The P-type amorphous silicon layer material, the carbon silicon buffer layer material, the I-type amorphous silicon layer material and the N-type amorphous silicon layer material are all conventional materials, and can be prepared by the conventional method. Taking a carbon silicon buffer layer material as an example, the carbon silicon buffer layer material is obtained by adopting a plasma chemical vapor deposition method, the deposition temperature is 230 ℃, the deposition pressure is 55Pa, the gas adopted during deposition is a mixed gas of methane gas, tetrahydrochysene silicon gas and hydrogen, and the flow ratio of the methane gas, the tetrahydrochysene silicon gas and the hydrogen is 350sccm:450sccm:150sccm.
Preferably, the front electrode layer material is gallium-doped zinc oxide material, and the back electrode layer material is metallic aluminum or gallium-doped zinc oxide material. Optionally, the mass ratio of gallium to zinc oxide in the gallium-doped zinc oxide material is (0.1-0.2): 1.
Preferably, the thickness of the back electrode layer is 50-100 μm.
Preferably, the width of the isolation groove in the step 2) is 0.01-0.04mm;
the width of the isolation groove in the step 4) is 100-140 mu m.
The invention also provides an amorphous silicon solar cell taking zinc gallium oxide as a transparent electrode, which is prepared by the preparation method.
The technical scheme of the invention has the following advantages:
according to the preparation method of the solar cell, the glass substrate deposited with the P-type amorphous silicon layer and the buffer layer is firstly placed in the mixed solution of the 1-butyl-3-methylimidazole mesylate ionic liquid and the ethanol for soaking, so that an ionic liquid film is formed on the surface of the silicon wafer, the surface of the silicon wafer is soaked, then the silicon wafer is placed in the hydrogen sulfide atmosphere for laser irradiation at the light source wavelength of 480nm, on one hand, the elimination of the recombination center of the surface of the silicon film is facilitated, and meanwhile, the sulfur element also helps to passivate the surface of the silicon carbon. The solar cell prepared by the invention is a weak light type amorphous silicon thin film cell and is mainly used under indoor weak light or medium strong light conditions.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a solar cell of the present invention.
Detailed Description
The following examples are provided for a better understanding of the present invention and are not limited to the preferred embodiments described herein, but are not intended to limit the scope of the invention, any product which is the same or similar to the present invention, whether in light of the present teachings or in combination with other prior art features, falls within the scope of the present invention.
The specific experimental procedures or conditions are not noted in the examples and may be followed by the operations or conditions of conventional experimental procedures described in the literature in this field. The reagents or apparatus used were conventional reagent products commercially available without the manufacturer's knowledge.
Example 1
The embodiment provides a method for manufacturing a solar cell, which comprises the following steps:
1) Plating a gallium-doped zinc oxide film (the mass ratio of gallium to zinc oxide is 0.1:1) on a glass substrate by adopting a magnetron sputtering method, texturing, and cleaning to obtain the substrate;
2) Scribing isolation grooves (the width of the isolation grooves is 0.02 mm) on the front electrode layer of the substrate by utilizing infrared laser to obtain a substrate with isolation groove patterns;
3) Placing the substrate obtained in the step 2) into a vacuum chamber, sequentially depositing a P-type amorphous silicon layer and a buffer layer on a front electrode layer by adopting a plasma chemical vapor deposition method, then placing the substrate into a mixed solution of 1-butyl-3-methylimidazole mesylate and ethanol (the mass ratio of the 1-butyl-3-methylimidazole mesylate to the ethanol is 1:1) for soaking at the temperature of 30 ℃ for 15min, taking out the substrate after soaking, and then placing the substrate into a hydrogen sulfide atmosphere for laser irradiation, wherein the wavelength of a light source is 480nm, and the illumination intensity is 480mW/cm 2 The illumination time is 20s, and after illumination is finished, the substrate is washed by ethanol and deionized water in sequence, so that the washed substrate is obtained, wherein the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 15 nanometers, the buffer layer is a carbon silicon buffer layer, and the thickness is 10 nanometers;
4) Placing the cleaned substrate obtained in the step 3) into a vacuum chamber, and sequentially depositing an I-type amorphous silicon layer and an N-type amorphous silicon layer on the buffer layer by adopting a plasma chemical vapor deposition method, wherein the I-type amorphous silicon layer is a hydrogenated amorphous silicon film with the thickness of 500 nanometers, and the N-type amorphous silicon layer is a phosphorus-doped hydrogenated amorphous silicon film with the thickness of 35 nanometers;
5) And (3) scribing isolation grooves (the width of the isolation grooves is 120 mu m) on the N-type amorphous silicon layer of the substrate obtained in the step (4) by using green laser, and then forming a back electrode layer (the thickness is 80 mu m) on the N-type amorphous silicon layer by using an aluminizing film by using a magnetron sputtering method to obtain the solar cell.
Example 2
The embodiment provides a method for manufacturing a solar cell, which comprises the following steps:
1) Plating a gallium-doped zinc oxide film (the mass ratio of gallium to zinc oxide is 0.1:1) on a glass substrate by adopting a magnetron sputtering method, texturing, and cleaning to obtain the substrate;
2) Scribing isolation grooves (the width of the isolation grooves is 0.02 mm) on the front electrode layer of the substrate by utilizing infrared laser to obtain a substrate with isolation groove patterns;
3) Placing the substrate obtained in the step 2) into a vacuum chamber, sequentially depositing a P-type amorphous silicon layer and a buffer layer on a front electrode layer by adopting a plasma chemical vapor deposition method, then placing the substrate into a mixed solution of 1-butyl-3-methylimidazole mesylate and ethanol (the mass ratio of the 1-butyl-3-methylimidazole mesylate to the ethanol is 1:1.2) for soaking at 35 ℃ for 10min, taking out the substrate after soaking, then placing the substrate into a hydrogen sulfide atmosphere for laser irradiation, wherein the wavelength of a light source is 480nm, and the illumination intensity is 480mW/cm 2 The illumination time is 22s, and after illumination is finished, the substrate is washed by ethanol and deionized water in sequence, so that the washed substrate is obtained, wherein the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 15 nanometers, the buffer layer is a carbon silicon buffer layer, and the thickness is 10 nanometers;
4) Placing the cleaned substrate obtained in the step 3) into a vacuum chamber, and sequentially depositing an I-type amorphous silicon layer and an N-type amorphous silicon layer on the buffer layer by adopting a plasma chemical vapor deposition method, wherein the I-type amorphous silicon layer is a hydrogenated amorphous silicon film with the thickness of 500 nanometers, and the N-type amorphous silicon layer is a phosphorus-doped hydrogenated amorphous silicon film with the thickness of 35 nanometers;
5) And (3) scribing isolation grooves (the width of the isolation grooves is 120 mu m) on the N-type amorphous silicon layer of the substrate obtained in the step (4) by using green laser, and then forming a back electrode layer (the thickness is 80 mu m) on the N-type amorphous silicon layer by using an aluminizing film by using a magnetron sputtering method to obtain the solar cell.
Example 3
The embodiment provides a method for manufacturing a solar cell, which comprises the following steps:
1) Plating a gallium-doped zinc oxide film (the mass ratio of gallium to zinc oxide is 0.1:1) on a glass substrate by adopting a magnetron sputtering method, texturing, and cleaning to obtain the substrate;
2) Scribing isolation grooves (the width of the isolation grooves is 0.02 mm) on the front electrode layer of the substrate by utilizing infrared laser to obtain a substrate with isolation groove patterns;
3) Placing the substrate obtained in the step 2) into a vacuum chamber, sequentially depositing a P-type amorphous silicon layer and a buffer layer on a front electrode layer by adopting a plasma chemical vapor deposition method, then placing the substrate into a mixed solution of 1-butyl-3-methylimidazole mesylate and ethanol (the mass ratio of the 1-butyl-3-methylimidazole mesylate to the ethanol is 1:1.1) for soaking at the temperature of 32 ℃ for 20min, taking out the substrate after soaking, then placing the substrate into a hydrogen sulfide atmosphere for laser irradiation, wherein the wavelength of a light source is 480nm, and the illumination intensity is 480mW/cm 2 The illumination time is 25s, and after illumination is finished, the substrate is washed by ethanol and deionized water in sequence to obtain a washed substrate, wherein the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 15 nanometers, the buffer layer is a carbon silicon buffer layer, and the thickness is 10 nanometers;
4) Placing the cleaned substrate obtained in the step 3) into a vacuum chamber, and sequentially depositing an I-type amorphous silicon layer and an N-type amorphous silicon layer on the buffer layer by adopting a plasma chemical vapor deposition method, wherein the I-type amorphous silicon layer is a hydrogenated amorphous silicon film with the thickness of 500 nanometers, and the N-type amorphous silicon layer is a phosphorus-doped hydrogenated amorphous silicon film with the thickness of 35 nanometers;
5) And (3) scribing isolation grooves (the width of the isolation grooves is 120 mu m) on the N-type amorphous silicon layer of the substrate obtained in the step (4) by using green laser, and then forming a back electrode layer (the thickness is 80 mu m) on the N-type amorphous silicon layer by using an aluminizing film by using a magnetron sputtering method to obtain the solar cell.
Comparative example 1
This comparative example provides a method for manufacturing a solar cell, which is different from example 1 in that the buffer layer is not impregnated and irradiated with laser, and specifically includes the steps of:
1) Plating a gallium-doped zinc oxide film (the mass ratio of gallium to zinc oxide is 0.1:1) on a glass substrate by adopting a magnetron sputtering method, texturing, and cleaning to obtain the substrate;
2) Scribing isolation grooves (the width of the isolation grooves is 0.02 mm) on the front electrode layer of the substrate by utilizing infrared laser to obtain a substrate with isolation groove patterns;
3) Placing the substrate obtained in the step 2) into a vacuum chamber, sequentially depositing a P-type amorphous silicon layer and a buffer layer on a front electrode layer by adopting a plasma chemical vapor deposition method, and then washing the substrate by using ethanol and deionized water to obtain a washed substrate, wherein the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 15 nanometers, and the buffer layer is a carbon-silicon buffer layer, and the thickness is 10 nanometers;
4) Placing the cleaned substrate obtained in the step 3) into a vacuum chamber, and sequentially depositing an I-type amorphous silicon layer and an N-type amorphous silicon layer on the buffer layer by adopting a plasma chemical vapor deposition method, wherein the I-type amorphous silicon layer is a hydrogenated amorphous silicon film with the thickness of 500 nanometers, and the N-type amorphous silicon layer is a phosphorus-doped hydrogenated amorphous silicon film with the thickness of 35 nanometers;
5) And (3) scribing isolation grooves (the width of the isolation grooves is 120 mu m) on the N-type amorphous silicon layer of the substrate obtained in the step (4) by using green laser, and then forming a back electrode layer (the thickness is 80 mu m) on the N-type amorphous silicon layer by using an aluminizing film by using a magnetron sputtering method to obtain the solar cell.
Comparative example 2
This comparative example provides a method of manufacturing a solar cell, which differs from example 1 only in step 3): placing the substrate obtained in the step 2) into a vacuum chamber, adopting a plasma chemical vapor deposition method to sequentially deposit a P-type amorphous silicon layer and a buffer layer on a front electrode layer, then placing the substrate into a hydrogen sulfide atmosphere for laser irradiation, wherein the wavelength of a light source is 480nm, and the illumination intensity is 480mW/cm 2 The illumination time is 20s, and ethanol are sequentially used after illumination is finishedAnd washing the substrate by deionized water to obtain a washed substrate, wherein the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 15 nanometers, the buffer layer is a carbon silicon buffer layer, and the thickness is 10 nanometers.
Comparative example 3
This comparative example provides a method of manufacturing a solar cell, which differs from example 1 only in step 3): and (2) placing the substrate obtained in the step (2) into a vacuum chamber, sequentially depositing a P-type amorphous silicon layer and a buffer layer on the front electrode layer by adopting a plasma chemical vapor deposition method, then placing the substrate into a mixed solution of ammonium sulfide and water (the mass ratio of the ammonium sulfide to the ethanol is 1:1) for soaking, wherein the soaking temperature is 30 ℃, the soaking time is 15min, and washing the substrate by deionized water after the soaking is finished to obtain the cleaned substrate, wherein the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 15 nanometers, and the buffer layer is a carbon-silicon buffer layer, and the thickness is 10 nanometers.
Test case
The solar cells prepared in the above examples and comparative examples were tested at 28℃under a light intensity of 200lux, and the test results are shown in Table 1.
TABLE 1
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (10)
1. A method of manufacturing a solar cell, comprising the steps of:
1) Plating a front electrode layer on a glass substrate, and then performing texturing and cleaning to obtain a substrate;
2) Scribing isolation grooves on the front electrode layer of the substrate by utilizing laser to obtain a substrate with isolation groove patterns;
3) Sequentially depositing a P-type amorphous silicon layer and a buffer layer on the substrate obtained in the step 2), then immersing the substrate in a mixed solution of 1-butyl-3-methylimidazole mesylate ionic liquid and ethanol, taking out the substrate after the immersion is finished, then placing the substrate in a hydrogen sulfide atmosphere to perform laser irradiation at a light source wavelength of 480nm, and washing the substrate with ethanol and deionized water sequentially after the laser irradiation is finished to obtain a cleaned substrate;
4) Sequentially depositing an I-type amorphous silicon layer and an N-type amorphous silicon layer on the buffer layer of the cleaned substrate obtained in the step 3), then scribing an isolation groove on the N-type amorphous silicon layer by utilizing laser, and then forming a back electrode layer on the N-type amorphous silicon layer to obtain the solar cell;
the front electrode layer is made of gallium doped zinc oxide material;
the buffer layer is a carbon silicon buffer layer.
2. The preparation method of the solar cell according to claim 1, wherein the mass ratio of the 1-butyl-3-methylimidazole mesylate to the ethanol in the mixed solution of the 1-butyl-3-methylimidazole mesylate ionic liquid and the ethanol is 1: (0.7-1.2).
3. The method of manufacturing a solar cell according to claim 1 or 2, wherein the dipping temperature is 25-35 ℃ and the dipping time is 5-20min.
4. The method for manufacturing a solar cell according to claim 1, wherein the irradiation intensity of the laser light is 450 to 500mW/cm 2 The illumination time is 15-25s.
5. The method for manufacturing a solar cell according to claim 1, wherein the P-type amorphous silicon layer is a boron-doped hydrogenated carbonized amorphous silicon film, the thickness is 10-25 nm, and the thickness of the buffer layer is 2-15 nm.
6. The method of claim 1, wherein the I-type amorphous silicon layer is a hydrogenated amorphous silicon film having a thickness of 450-550 nm, and the N-type amorphous silicon layer is a hydrogenated amorphous silicon film doped with phosphorus having a thickness of 30-40 nm.
7. The method of claim 1, wherein the back electrode layer is made of a metallic aluminum or gallium doped zinc oxide material.
8. The method of manufacturing a solar cell according to claim 1 or 2, wherein the thickness of the back electrode layer is 50-100 μm.
9. The method for producing a solar cell according to claim 1 or 2, wherein,
the width of the isolation groove in the step 2) is 0.01-0.04mm;
the width of the isolation groove in the step 4) is 100-140 mu m.
10. An amorphous silicon solar cell using zinc gallium oxide as a transparent electrode, characterized in that it is prepared by the preparation method according to any one of claims 1 to 9.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5456762A (en) * | 1992-12-28 | 1995-10-10 | Canon Kabushiki Kaisha | Photoelectric conversion elements |
| CN101246915A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Optical diffusion layer of thin-film solar cell |
| CN101567400A (en) * | 2008-04-10 | 2009-10-28 | 韩国铁钢株式会社 | Thin film silicon solar cell and manufacturing method thereof |
| CN201562684U (en) * | 2009-11-03 | 2010-08-25 | 福建钧石能源有限公司 | Silica-based thin-film solar battery |
| CN102255005A (en) * | 2011-06-30 | 2011-11-23 | 浙江正泰太阳能科技有限公司 | Thin film solar cell and manufacturing method thereof |
| CN102931270A (en) * | 2012-11-19 | 2013-02-13 | 深圳市创益科技发展有限公司 | Weak light type amorphous silicon solar cell and manufacturing method thereof |
| CN106229361A (en) * | 2016-08-03 | 2016-12-14 | 河北大学 | A kind of P I N electric layer structure and preparation method thereof and euphotic solar energy battery and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100989615B1 (en) * | 2009-09-02 | 2010-10-26 | 엘지전자 주식회사 | Solar cell |
-
2022
- 2022-10-26 CN CN202211316517.2A patent/CN115548169B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5456762A (en) * | 1992-12-28 | 1995-10-10 | Canon Kabushiki Kaisha | Photoelectric conversion elements |
| CN101246915A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Optical diffusion layer of thin-film solar cell |
| CN101567400A (en) * | 2008-04-10 | 2009-10-28 | 韩国铁钢株式会社 | Thin film silicon solar cell and manufacturing method thereof |
| CN201562684U (en) * | 2009-11-03 | 2010-08-25 | 福建钧石能源有限公司 | Silica-based thin-film solar battery |
| CN102255005A (en) * | 2011-06-30 | 2011-11-23 | 浙江正泰太阳能科技有限公司 | Thin film solar cell and manufacturing method thereof |
| CN102931270A (en) * | 2012-11-19 | 2013-02-13 | 深圳市创益科技发展有限公司 | Weak light type amorphous silicon solar cell and manufacturing method thereof |
| CN106229361A (en) * | 2016-08-03 | 2016-12-14 | 河北大学 | A kind of P I N electric layer structure and preparation method thereof and euphotic solar energy battery and preparation method thereof |
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