CN113206172A - Sliced silicon heterojunction cell, preparation method and solar cell module - Google Patents
Sliced silicon heterojunction cell, preparation method and solar cell module Download PDFInfo
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- CN113206172A CN113206172A CN202110417470.8A CN202110417470A CN113206172A CN 113206172 A CN113206172 A CN 113206172A CN 202110417470 A CN202110417470 A CN 202110417470A CN 113206172 A CN113206172 A CN 113206172A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 199
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- 239000010703 silicon Substances 0.000 title claims abstract description 196
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 84
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 23
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 19
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
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- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Abstract
The invention belongs to the technical field of solar cells, and particularly relates to a sliced silicon heterojunction cell, a preparation method thereof and a solar cell module. The preparation method comprises the step of cutting the whole heterojunction solar cell, and further comprises the following steps: and (3) carrying out at least two of the following treatment processes on the sliced silicon heterojunction battery main body formed after cutting: cleaning and passivating the cut surface of the sliced silicon heterojunction battery main body; forming a side silicon film on the cutting surface of the sliced silicon heterojunction battery main body; and carrying out light injection annealing treatment on the cutting surface of the sliced silicon heterojunction battery main body. The cutting surface of the silicon heterojunction battery main body is cleaned and passivated, a side silicon film is formed, and light injection annealing treatment is carried out in at least two processing modes, so that the defects of the cutting surface are effectively passivated, the recombination of current carriers is reduced, the power generation efficiency of the battery is improved, and the reduction of the battery efficiency caused by the damage of the cutting surface due to the laser slicing technology in the prior art is repaired.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a sliced silicon heterojunction cell, a preparation method of the sliced silicon heterojunction cell and a solar cell module.
Background
The solar cell has the advantages of cleanness, no pollution, reproducibility, stable working performance and the like. Solar cells, also known as photovoltaic cells, utilize the photovoltaic effect of semiconductors to convert the energy of sunlight directly into electrical energy. In the conversion process, the light is absorbed to generate electron-hole pairs, and the electron-hole pairs are separated to realize the transmission of the generated current. Solar cells are classified into different types according to the structure and the manufacturing process, including amorphous silicon/crystalline silicon heterojunction solar cells and other types of silicon solar cells. For example, in a heterojunction solar cell using crystalline silicon as a substrate, a semiconductor layer and electrodes are prepared on one side or two sides of the substrate to form a cell, then a plurality of cells are welded to be connected in series or in parallel, and then packaged to form an assembly, and the assembly is fed back to a power grid through an inverter after power generation.
Throughout the twenty years that the photovoltaic industry of China has gone, the price of solar cells is lower than that of solar cells for one year, the essence of cost reduction is innovation of the technology and the industry chain, and the important process is the slicing technology. In the laser slicing process, the laser partially melts the battery piece along a set path, and then the battery piece is cracked along the set path through mechanical force to realize slicing. However, the laser damage region and the mechanical fracture region are formed at the cutting edge of the cell, so that silicon atoms in the cell cannot keep the original ordered arrangement state, a dangling bond is formed, the efficiency of the cell is reduced, and the external output power of the half-sheet assembly is damaged.
How to maintain the efficiency of the cut silicon heterojunction cell or reduce the efficiency reduction caused by cutting becomes one of the technical problems to be solved in the field of the current heterojunction solar cell.
Disclosure of Invention
The invention aims to solve the technical problems in the prior art, and provides a sliced silicon heterojunction battery, a preparation method of the sliced silicon heterojunction battery and a solar battery assembly.
The technical scheme adopted for solving the technical problem of the invention is as follows:
as an aspect of the present invention, a method for manufacturing a sliced silicon heterojunction cell is provided, which includes a step of cutting a whole sliced silicon heterojunction solar cell, and further includes: and (3) carrying out at least two of the following treatment processes on the sliced silicon heterojunction battery main body formed after cutting:
cleaning and passivating the cut surface of the sliced silicon heterojunction battery main body;
forming a side silicon film on the cutting surface of the sliced silicon heterojunction battery main body;
carrying out light injection annealing treatment on the cutting surface of the sliced silicon heterojunction battery main body;
the slice silicon heterojunction cell main body comprises a crystalline silicon substrate, an intrinsic amorphous silicon layer, a doped amorphous silicon layer, a transparent conducting layer and a gate electrode.
Preferably, in the process of cleaning and passivating the cut surface of the sliced silicon heterojunction battery main body, the treatment solution comprises a hydrogen fluoride solution, and the molar concentration range of hydrogen fluoride in the hydrogen fluoride solution is 0.5-10%;
preferably, the temperature of the hydrogen fluoride solution is in the range of 10 ℃ to 30 ℃;
preferably, the rate of wiping the cutting surface is in the range of 30mm/s to 166 mm/s;
preferably, the cutting surfaces are cleaned by wiping, the wiping frequency of each cutting surface is 1 to 5 times, and the wiping tool is a cotton swab or a dust-free cloth.
Preferably, in the process of cleaning and passivating the cut surface of the sliced silicon heterojunction battery main body, after the cleaning and passivating treatment is performed, the sliced silicon heterojunction battery main body is dried;
preferably, the sliced silicon heterojunction battery main body is dried by using an oven or by using nitrogen for drying.
Preferably, when the side silicon thin film is formed on the cutting surface of the sliced silicon heterojunction battery main body, the dielectric constant of the side silicon thin film ranges from 1 to 10;
the thickness range of the side silicon film is 20 nm-110 nm;
preferably, the material forming the side silicon thin film includes any one of silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide;
preferably, the preparation method of the side silicon film comprises a plasma chemical vapor deposition method or a hot wire chemical vapor deposition method, and the process gas of the plasma chemical vapor deposition method or the hot wire chemical vapor deposition method at least comprises SiH4。
Preferably, the hot wire chemical vapor deposition method for forming the side silicon thin film includes:
stacking a plurality of the sliced silicon heterojunction solar cell main bodies orderly;
coating the cut surfaces of the sliced silicon heterojunction solar cell main bodies by adopting the hot wire chemical vapor deposition method, wherein the coating temperature range is 180-220 ℃, and the coating time range is 10-2 mins;
carrying out irradiation annealing on the plurality of sliced silicon heterojunction solar cell main bodies;
preferably, the process gas for preparing the silicon oxynitride film by the plasma chemical vapor deposition method at least comprises H2、SiH4、N2O、NH3The deposition temperature is 30-300 ℃, and the pressure is 0.5-3.5 torr;
the process gas for preparing the silicon oxide film by the plasma chemical vapor deposition method comprises CO2、SiH4、H2The deposition temperature is 60-300 deg.C, and the pressure is 0.5-3.5 torr.
Preferably, in the treatment process of performing light injection annealing treatment on the cut surface of the sliced silicon heterojunction battery main body, the sliced silicon heterojunction battery main body is placed in an atmosphere, and a light injection annealing mode is adopted to treat only the cut surface of the sliced silicon heterojunction battery main body within a set temperature range by using a light source;
preferably, in the light injection annealing mode, the light source irradiates perpendicular to the cutting surface;
preferably, in the light injection annealing mode, the light source irradiation mode is continuous irradiation or intermittent irradiation, the total time range of the continuous irradiation is 20 s-2 min, and the total time range of the intermittent irradiation is 20 s-5 min;
preferably, in the intermittent irradiation, the single irradiation time of the light source ranges from 2ms to 20s, and the single intermittent time is preferably from 2s to 10 s;
preferably, in the light injection annealing method, the light intensity range is 20sun to 100 sun;
preferably, the light intensity is in the range of 30sun to 80 sun;
preferably, the set temperature range is 180 ℃ to 220 ℃.
Preferably, in the treatment process of performing light injection annealing treatment on the cut surface of the sliced silicon heterojunction battery main body, the atmosphere gas is air or nitrogen;
preferably, the atmosphere gas is a mixed gas of oxygen and nitrogen, and the oxygen content of the mixed gas is more than 20%;
preferably, the atmosphere gas further comprises a portion of pure water vapor;
preferably, the light injection annealing mode comprises irradiating with light of different wavelengths, and the light source comprises infrared light, visible light, monochromatic light and white light;
preferably, the light source includes a laser, a halogen lamp, or an LED lamp.
Preferably, the whole silicon heterojunction battery is cut into a required shape by a laser or a nondestructive cutting machine to obtain the sliced silicon heterojunction battery main body.
The sliced silicon heterojunction battery comprises a sliced silicon heterojunction battery main body, wherein the cutting surface of the sliced silicon heterojunction battery main body is processed by adopting the preparation method of the sliced silicon heterojunction battery;
the slice silicon heterojunction battery is at least one of an amorphous silicon/crystalline silicon heterojunction battery and an amorphous silicon/crystalline silicon heterojunction-perovskite laminated battery.
As an aspect of the present invention, there is provided a solar cell module comprising the sliced silicon heterojunction cell described above.
The invention has the beneficial effects that:
according to the preparation method of the sliced silicon heterojunction battery, the cut surface of the sliced silicon heterojunction battery main body is cleaned and passivated, the side silicon film is formed, and the light injection annealing treatment is carried out in at least two processing modes, so that the defects of the cut surface can be passivated, the recombination of current carriers is reduced, and the power generation efficiency of the battery is improved, so that the battery efficiency which is 0.3% -0.5% caused by the damage of the cut surface due to the laser slicing technology in the prior art is reduced, and the battery efficiency is only reduced by about 0.15% -0.35%.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a sliced silicon heterojunction cell in example 1 of the present invention;
fig. 2 is a schematic structural diagram of a split silicon heterojunction cell body in embodiment 1 of the present invention;
FIG. 3 is a schematic diagram of light implantation annealing of a segmented silicon heterojunction cell in example 1 of the present invention;
FIG. 4 is a schematic view showing the structure of a battery case in which a cut silicon heterojunction battery is subjected to light injection annealing in example 1 of the present invention;
in the drawings, wherein:
11-N type monocrystalline silicon pieces; 21-a first intrinsic amorphous silicon layer; 22-a second intrinsic amorphous silicon layer; 31-N type amorphous silicon layer; a 32-P type amorphous silicon layer; 41-a first transparent conductive layer; 42-a second transparent conductive layer; 51-a first electrode; 52-a second electrode;
60-side silicon thin film; 61-a battery compartment; 62-a light source; 63-slicing a silicon heterojunction cell body.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the sliced silicon heterojunction cell, the method for manufacturing the sliced silicon heterojunction cell, and the solar cell module of the present invention are further described in detail below with reference to the accompanying drawings and the detailed description. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration and explanation only and are not intended to limit the scope of the invention.
It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. The technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.
The technical idea of the invention is as follows:
the heterojunction cell generally takes an N-type silicon wafer as a substrate, and has a structure that an amorphous silicon layer, a transparent conducting layer and a gate electrode are formed on two sides, and has the advantages of low light-induced attenuation rate LID, low temperature coefficient, high double-sided rate, low annual attenuation rate and the like. Compared with other types of solar cells in the prior art, the solar cell has great difference in performance and preparation process.
The voltage of the silicon heterojunction cell is irrelevant to the area of the cell, the current is in direct proportion to the area of the cell, when the whole silicon heterojunction cell is cut into the slicing heterojunction solar cell, the area of the slicing heterojunction solar cell is reduced, the current is reduced, the internal loss is effectively reduced under the condition of the same internal current, and the external output power is improved. However, it is a fact that after the whole silicon heterojunction cell is cut, the efficiency of the silicon heterojunction cell usually suffers a significant loss, because a large number of defects and dangling bonds exist on the cut surface of the cut heterojunction solar cell, resulting in a large number of carrier recombination, resulting in a large loss of carriers, and significantly reducing the efficiency of the cell. According to the defect characteristics of the cut surface, the invention adopts the progressive modes of cleaning passivation, light injection annealing, forming a silicon-containing film and the like to gradually eliminate the defects and dangling bonds on the cut surface, repair the crystal lattice damage, move impurity atoms to crystal lattice points and activate the crystal lattice points, and form the silicon-containing film as a protective layer, thereby reducing the bulk recombination of current carriers, reducing the surface state density and reducing the efficiency damage of the heterojunction battery caused by cutting.
Example 1:
the sliced silicon heterojunction battery has more defects near the side cross section caused by laser cutting, and different from silicon atoms in a body, the silicon atoms on the surface have dangling bonds, and a large amount of carriers are compounded without passivation treatment.
The embodiment provides a method for manufacturing a sliced silicon heterojunction cell, as shown in fig. 1, the method includes a step of cutting a whole sliced silicon heterojunction solar cell, and further includes: and (3) carrying out the following treatment on the sliced silicon heterojunction battery main body formed after cutting:
cleaning and passivating the cut surface of the sliced silicon heterojunction battery main body;
forming a side silicon film on the cutting surface of the sliced silicon heterojunction battery main body;
carrying out light injection annealing treatment on the cut surface of the sliced silicon heterojunction battery main body;
the slice silicon heterojunction cell main body at least comprises a crystalline silicon substrate, an intrinsic amorphous silicon layer, a doped amorphous silicon layer, a transparent conducting layer and a gate electrode.
The preparation method of this embodiment, step S0) cuts the whole heterojunction solar cell, which can be formed by using the existing process technology, and when the cutting process such as tiling is required, the preparation method of the sliced silicon heterojunction solar cell of this embodiment can be used, and at least two of the three treatment processes are comprehensively used for the cut surface, so as to gradually eliminate the cut surface defects and dangling bonds of the silicon heterojunction solar cell body caused by cutting, and avoid a large amount of loss of carriers, thereby avoiding reduction of the cell efficiency.
The whole silicon heterojunction solar cell structure comprises an N-type silicon wafer serving as a substrate, a front intrinsic hydrogen-rich amorphous silicon thin film, a P-type amorphous silicon thin film and a front transparent conducting layer (TCO) which are sequentially arranged on the front side, and a back intrinsic hydrogen-rich amorphous silicon thin film, an N-type amorphous silicon thin film and a back transparent conducting layer (TCO) which are sequentially arranged on the back side. The crystalline silicon substrate, i.e., the N-type silicon wafer, may be an N-type monocrystalline silicon wafer. Of course, the crystalline silicon substrate may include any one of a single crystal silicon wafer or a polycrystalline silicon wafer.
Preferably, the sintering technique and the light implantation annealing technique are combined, and the light implantation annealing can be carried out on the whole silicon heterojunction solar cell at the same time of sintering. That is, before the whole heterojunction solar cell is cut, the front surface and the back surface of the whole silicon heterojunction solar cell are subjected to pre-light injection annealing, and the defects of the front surface and the back surface are repaired in advance.
On the basis of the structure of the whole silicon heterojunction solar cell, a laser or a nondestructive cutting machine is adopted to cut the whole silicon heterojunction solar cell into a required shape to obtain a sliced silicon heterojunction cell main body, as shown in fig. 2, the sliced silicon heterojunction cell main body 63 comprises an N-type monocrystalline silicon wafer 11 (c-Si (N)), and a first intrinsic amorphous silicon layer 21 (a-Si (i)), an N-type amorphous silicon layer 31 (a-Si (N)), a first transparent conductive layer 41 and a first electrode 51 are sequentially formed on one side (front surface) of the N-type monocrystalline silicon wafer 11; on the other side (back surface) of the N-type single crystal silicon wafer 11 (c-Si (N)), a second intrinsic amorphous silicon layer 22 (a-Si (i)), a P-type amorphous silicon layer 32 (a-Si (P)), a second transparent conductive layer 42, and a second electrode 52 are formed in this order.
The cut surface of the cut sliced silicon heterojunction cell body including the thermal damage region caused by laser cutting and the mechanical fracture region where many dangling bonds exist, these regions cause a large amount of carrier recombination. In this embodiment, the sliced silicon heterojunction battery body formed after cutting is specifically processed as follows:
step S1) cleaning and passivating the cutting surface of the wafer silicon heterojunction battery main body.
In this step, the step of cleaning the passivation process includes: the treatment solution is dipped with a wiping tool and the cut surface is wiped. Specifically, the number of times of wiping of the cut surface of one side may be 1 to 5 times; the wiping tool may be a cotton swab or a dust-free cloth. The cleaning passivation process cleans at least foreign particles on the cutting surface and passivates at least dangling bonds on the cutting surface. Further, the whole surface of the cut silicon heterojunction cell main body 63 is subjected to cleaning and passivation treatment.
Preferably, the cleaning passivation process comprises a hydrogen fluoride solution. The molar concentration of hydrogen fluoride in the hydrogen fluoride solution ranges from 0.5% to 10%. If the molar concentration is lower than 0.5%, the reaction speed is too slow, and dangling bonds cannot be effectively treated; if the molar concentration is higher than 10%, the reaction rate is too high and it is difficult to control. The molar concentration of the hydrogen fluoride solution in the interval is beneficial to balancing the effect of the cleaning and passivating treatment and the high-efficiency cleaning and passivating treatment.
Preferably, the temperature of the hydrogen fluoride solution is in the range of 10 ℃ to 30 ℃. If the temperature of the hydrogen fluoride solution is lower than 10 ℃, the reaction speed is too slow, and dangling bonds cannot be effectively treated; if the temperature is higher than 30 ℃, the reaction speed is too high and is difficult to control; moreover, if the temperature is too high, the hydrogen fluoride is volatilized rapidly, hydrogen fluoride gas is generated, and toxicity is dangerous. The temperature of the hydrogen fluoride solution in the interval can be beneficial to balancing the cleaning and passivation treatment effect and the efficient cleaning and passivation treatment, and does not generate toxicity danger.
Preferably, the rate of wiping the cut surface of the sliced silicon heterojunction cell body 63 ranges from 30mm/s to 166 mm/s. If the wiping rate is lower than 30mm/s, the hydrogen fluoride is volatilized too much, the hydrogen fluoride participating in the reaction is less, and the passivation effect is poor; if the wiping rate is higher than 166mm/s, the hydrogen fluoride cannot be fully contacted with the silicon on the cutting surface, and the reaction effect is poor; with the above rate range, a balance can be obtained between the effect of the passivation treatment and the efficiency of the passivation treatment.
On the one hand, the foreign particles adhering to the cutting surface can be removed by hydrogen fluoride, for example, when the foreign particles are Si and SiO in the cutting step2When remaining, the remaining Si and SiO can be removed by hydrogen fluoride2Impurity particles. The following reactions are present:
SiO2(s)+6HF(aq)＝H2SiF6(s)+2H2O(l)
on the other hand, since laser cutting is actually a thermal deformation process, the section defect formed on the cutting surface of the heterojunction solar cell is large, and through the cleaning and passivating treatment of the step, hydrogen fluoride can provide hydrogen ions which form Si-H bonds with the dangling bonds of silicon on the cutting surface to passivate the dangling bonds on the cutting surface, so that the carriers are not easy to compound on the cutting surface, the impurity particles on the cutting surface can be removed, the loss of the carriers is reduced, and the photoelectric conversion efficiency of the sliced silicon heterojunction cell main body 63 is ensured.
After the cleaning passivation is completed, the method preferably further comprises the following steps: and drying the sliced silicon heterojunction battery main body 63 subjected to the passivation cleaning treatment. Specifically, the silicon heterojunction cell main body 63 can be dried by using an oven or by using a nitrogen blow-drying mode, so that water in the residual solution is removed, the surface of the heterojunction solar cell is prevented from being polluted or damaged by the impurities in the air due to the residual water stain of the solution.
Step S2): and forming a side silicon film on the cutting surface of the sliced silicon heterojunction battery main body.
In this step, referring to fig. 2, a side silicon thin film 60 is formed on the cut surface of the sliced silicon heterojunction solar cell body, the dielectric constant of the side silicon thin film 60 ranges from 1 to 10, and the refractive index of the side silicon thin film 60 ranges from 1.4 to 2.5. The dielectric constant is related to the film deposition rate, film compactness, type of chemical bond, electron mobility and content of hydrogen atoms. The dielectric constant film within the range of 1-10 has good compactness and proper hydrogen atom content, can form good passivation effect on the defects of an interface, has corresponding insulating property, and can effectively avoid generating leakage current.
In this step, a silicon-containing film, i.e., a side silicon film 60, such as a silicon oxide layer, may be deposited on the cut surface of the sliced silicon heterojunction solar cell body by Plasma Enhanced Chemical Vapor Deposition (PECVD) under the condition that the process gas includes CO2、SiH4、NH3And the deposition temperature is 60-300 ℃, and the pressure is 0.5-3.5 torr.
Of course, the method for preparing the side silicon thin film 60 in this step may also be a hot filament chemical vapor deposition method. The method for preparing the side silicon film 60 by adopting the hot wire chemical vapor deposition method comprises the following steps:
firstly, a plurality of sliced silicon heterojunction solar cell main bodies are orderly stacked.
And then, coating the cut surfaces of the multiple sliced silicon heterojunction solar cell main bodies by adopting a hot filament chemical vapor deposition method to form the side silicon film 60.
In the step, the coating temperature range is 180-220 ℃, and the preferred coating temperature is 200 ℃; the coating time is 10 s-2 min, preferably 1 min. In an actual process, the film thickness of the side silicon thin film 60 can be ensured to meet the requirement by adjusting the film coating time, the film coating temperature, the film coating rate and the working power.
Step S3) adopts a light injection annealing mode to process the cutting surface of the wafer silicon heterojunction battery main body.
In this embodiment, as shown in fig. 3, a cut silicon heterojunction cell main body 63 is placed in a cell case 61 having a hollow portion on only one side, an atmosphere is adjusted, and only the cut surface of the cut silicon heterojunction cell main body 63 is processed by a light source 62 within a set temperature range by a light injection annealing method.
In the step, the cut surface of the cut amorphous silicon/crystalline silicon heterojunction cell is processed by adopting a light injection annealing mode, and the environment conditions of the light injection annealing are as follows:
the atmosphere is air or nitrogen (N)2) Or the atmosphere is oxygen (O)2) And nitrogen, or the atmosphere gas is the mixed gas of oxygen, nitrogen and pure water vapor;
the light source 62 comprises laser, halogen lamp or LED white lamp, the light intensity is in the range of 20 sun-100 sun, more preferably 30 sun-80 sun;
of course, light of different wavelengths may be used for illumination, and the light source 62 may be white light, infrared light, visible light, or monochromatic light (e.g., green or red light), with light intensity ranging from 20sun to 100 sun. The white light is full wavelength, the infrared light is about 900nm, and the monochromatic light is light of other single colors. Preferably, red light and white light with better annealing effect by light injection are adopted.
The light source 62 irradiates perpendicular to the cut surface to be cut, and the irradiation mode can be continuous irradiation or intermittent irradiation, wherein the total time range of the continuous irradiation is 20 s-2 min, and the total time range of the intermittent irradiation is 20 s-5 min.
Preferably, when the irradiation is intermittent, the single irradiation time of the light source 62 is 2ms to 20s, and the single intermittent time (i.e. the off time of the light source 62) is preferably 2s to 10 s;
the temperature range is set to be 180-220 ℃.
The effect of light injection annealing on a segmented silicon heterojunction cell is related to time, light intensity and temperature. The effect of light injection annealing on the slice silicon heterojunction solar cell changes along with the changes of time, light intensity and temperature, and when the light intensity and the temperature are constant, the light injection annealing effect is firstly improved and then tends to be saturated and unchanged along with the prolonging of the time; when the time and the temperature are fixed, the light injection annealing effect is firstly improved along with the enhancement of the light intensity and then tends to be saturated and unchanged; when the time and the light intensity are fixed, the light injection annealing effect is firstly improved and then is deteriorated along with the rise of the temperature. Preferably, the time, light intensity and temperature for which the light implantation annealing works well for the segmented silicon heterojunction solar cell are 40s, 80sun and 200 ℃.
In this embodiment, when performing light injection annealing treatment on the cut surface of the cut silicon heterojunction battery, a special light injection annealing device is adopted, which includes a battery box 61 for placing the battery to be subjected to light injection annealing treatment, the battery box 61 has a battery accommodating cavity, and at least one side surface of the accommodating cavity is hollowed out, as shown in fig. 4; the side length of the bottom surface of the accommodating cavity is not less than the area of the battery to be subjected to light injection annealing treatment, for example, the size of the battery is increased by 0-5 mm; the height of the accommodating cavity is larger than the sum of the thicknesses of the at least two batteries to be subjected to light injection annealing treatment, the number of the batteries to be subjected to light injection annealing treatment can be determined by the height of the accommodating cavity, and the preferred height range is 3 cm-10 cm.
The light source 62 is arranged at one hollowed-out side of the battery box 61, 50-500 sliced silicon heterojunction batteries are stacked and arranged in the battery box 61 specific to the light injection device, one side of the battery box 61 is hollowed-out, the cutting surface faces to the hollowed-out side, for example, the right side, the light source 62 irradiates the sliced silicon heterojunction batteries from the right side during annealing, the irradiation mode adopts continuous irradiation or intermittent irradiation, the power of the light source 62 is adjusted, the temperature range of the cutting surface of the silicon heterojunction battery main body is kept at 180-220 ℃, and the light injection annealing time is 20 s-5 min.
The step adopts the specially-made battery box 61 with one hollow surface arranged in the annealing furnace, a stack of sliced silicon heterojunction batteries can be simultaneously placed in the battery box 61, and then the battery box 61 is placed on a bracket of the annealing furnace, so that the sliced silicon heterojunction batteries are heated and irradiated, and a plurality of batteries are simultaneously annealed. Compared with the treatment mode of horizontally placing the battery pieces one by one on the chain structure for light injection annealing in the general process in the prior art, the method can greatly improve the uniform rate of the annealing pieces and the annealing rate.
In a more general ceramic roller way type or metal mesh belt type annealing furnace device, the front surface, the back surface and the side surface of the sliced silicon heterojunction battery main body 63 can be simultaneously subjected to light injection annealing, photons can be uniformly distributed on the whole surface of the sliced silicon heterojunction battery main body 63, and the sliced silicon heterojunction battery main body has a transmission effect with a certain depth, so that the light injection whole effect is formed, and the defects of the whole area are all repaired. The light injection annealing process is arranged after the laser slicing process, and the cut surface after cutting, the non-cut front surface and the back surface and even the defects in the body are repaired at one time, so that the independent light injection annealing is not needed before the whole heterojunction solar cell is cut, and the updating investment on equipment is small.
After the cut surface of the sliced silicon heterojunction battery main body 63 is processed by adopting a light injection annealing mode, the light injection annealing can excite the migration of hydrogen atoms in the amorphous silicon film, and the light injection annealing is carried out on the cut surface to excite the hydrogen atoms near the cut surface, so that the defects and dangling bonds on the cut surface are passivated or partially passivated, the recombination of minority carriers is reduced, the battery efficiency after cutting is maintained or the battery efficiency loss after cutting is reduced.
The preparation method of the sliced silicon heterojunction solar cell is simple and convenient, and can selectively implement two steps after the silicon heterojunction solar cell is cut, so that seamless connection with the production mode of the silicon heterojunction solar cell in the prior art is realized.
The experimental data of the performance of the sliced silicon heterojunction solar cell in the example are shown in the following table.
The laser slicing technology in the prior art can damage the cut side face of the battery, so that the efficiency of the battery is reduced by 0.3%. Experiments show that by adopting the preparation method of the sliced silicon heterojunction battery of the embodiment, after comprehensive treatment of cleaning, passivation, side silicon film formation and light injection annealing, the reduction of the battery efficiency of the sliced silicon heterojunction battery is reduced from 0.3% to 0.15%.
Example 2:
the present embodiment provides a method for manufacturing a sliced silicon heterojunction cell, and the present embodiment is different from embodiment 1 in that the method only includes two processing processes of cleaning and passivation treatment and light implantation annealing treatment, and does not include a process for forming a side silicon thin film.
Specific implementation parameters can refer to corresponding steps of example 1, and are not detailed here.
The experimental data of the performance of the sliced silicon heterojunction solar cell in the example are shown in the following table.
Example 3:
the present embodiment provides a method for manufacturing a sliced silicon heterojunction cell, and the present embodiment is different from embodiment 1 in that the method only includes two processing processes of cleaning and passivating, and forming a side silicon thin film, and does not include a light implantation annealing processing process.
Specific implementation parameters can refer to corresponding steps of example 1, and are not detailed here.
The experimental data of the performance of the sliced silicon heterojunction solar cell in the example are shown in the following table.
Example 4:
the present embodiment provides a method for manufacturing a sliced silicon heterojunction cell, and the present embodiment is different from embodiment 1 in that the method only includes two processing processes of light injection annealing treatment and side silicon film formation, and does not include a cleaning passivation treatment process.
Specific implementation parameters can refer to corresponding steps of example 1, and are not detailed here.
The experimental data of the performance of the sliced silicon heterojunction solar cell in the example are shown in the following table.
Example 5:
accordingly, the present embodiment also provides a high efficiency solar cell module formed based on the sliced silicon heterojunction solar cell according to any one of embodiments 1 to 4.
In this embodiment, as an example, the sliced silicon heterojunction battery after being subjected to the comprehensive treatment of cleaning and passivation treatment, side silicon film formation treatment, and light injection annealing treatment is connected in parallel or in series according to the design to form a corresponding assembly pattern, and assembly process steps such as series welding, lamination, framing, wire box mounting, curing, testing, and the like are sequentially performed to prepare the sliced silicon heterojunction battery assembly.
After the comprehensive treatment of cleaning and passivating treatment, side silicon film forming treatment and light injection annealing treatment, the reduction of the cell efficiency of the sliced silicon heterojunction cell is reduced from 0.3% to 0.15%, and the power of a cell assembly formed by the sliced silicon heterojunction cell after more than two treatments can be improved by 2W-3W or even higher than that of a cell assembly formed by an untreated silicon heterojunction cell.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The specific embodiments are specific examples of implementing the technical solutions of the present invention. Also, the term "comprises/comprising" when used herein refers to the presence of a feature, integer or component, but does not preclude the presence or addition of one or more other features, integers or components.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A preparation method of a sliced silicon heterojunction cell comprises the step of cutting the whole heterojunction solar cell, and is characterized by further comprising the following steps: and (3) carrying out at least two of the following treatment processes on the sliced silicon heterojunction battery main body formed after cutting:
cleaning and passivating the cut surface of the sliced silicon heterojunction battery main body;
forming a side silicon film on the cutting surface of the sliced silicon heterojunction battery main body;
carrying out light injection annealing treatment on the cutting surface of the sliced silicon heterojunction battery main body;
the slice silicon heterojunction cell main body comprises a crystalline silicon substrate, an intrinsic amorphous silicon layer, a doped amorphous silicon layer, a transparent conducting layer and a gate electrode.
2. The method for preparing the sliced silicon heterojunction battery as claimed in claim 1, wherein in the process of cleaning and passivating the cut surface of the sliced silicon heterojunction battery main body, the treatment solution comprises a hydrogen fluoride solution, and the molar concentration range of hydrogen fluoride in the hydrogen fluoride solution is 0.5-10%;
preferably, the temperature of the hydrogen fluoride solution is in the range of 10 ℃ to 30 ℃;
preferably, the rate of wiping the cutting surface is in the range of 30mm/s to 166 mm/s;
preferably, the cutting surfaces are cleaned by wiping, the wiping frequency of each cutting surface is 1 to 5 times, and the wiping tool is a cotton swab or a dust-free cloth.
3. The method for preparing the sliced silicon heterojunction battery as claimed in claim 2, wherein in the process of cleaning and passivating the cut surface of the sliced silicon heterojunction battery body, the sliced silicon heterojunction battery body is dried after the cleaning and passivating process is performed;
preferably, the sliced silicon heterojunction battery main body is dried by using an oven or by using nitrogen for drying.
4. The method for preparing a sliced silicon heterojunction battery as claimed in claim 1, wherein when a side silicon thin film is formed on the cut surface of the sliced silicon heterojunction battery body, the dielectric constant of the side silicon thin film is in the range of 1 to 10;
the thickness range of the side silicon film is 20 nm-110 nm;
preferably, the material forming the side silicon thin film includes any one of silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide;
preferably, the preparation method of the side silicon film comprises a plasma chemical vapor deposition method or a hot wire chemical vapor deposition method, and the process gas of the plasma chemical vapor deposition method or the hot wire chemical vapor deposition method at least comprises SiH4。
5. The method of fabricating a sliced silicon heterojunction solar cell as claimed in claim 4 wherein the hot filament chemical vapor deposition process to form the side silicon thin film comprises:
stacking a plurality of the sliced silicon heterojunction solar cell main bodies orderly;
coating the cut surfaces of the sliced silicon heterojunction solar cell main bodies by adopting the hot wire chemical vapor deposition method, wherein the coating temperature range is 180-220 ℃, and the coating time range is 10-2 mins;
carrying out irradiation annealing on the plurality of sliced silicon heterojunction solar cell main bodies;
preferably, the plasma chemical vapor deposition method is used for preparingThe process gas for the SiON film comprises at least H2、SiH4、N2O、NH3The deposition temperature is 30-300 ℃, and the pressure is 0.5-3.5 torr;
the process gas for preparing the silicon oxide film by the plasma chemical vapor deposition method comprises CO2、SiH4、H2The deposition temperature is 60-300 deg.C, and the pressure is 0.5-3.5 torr.
6. The method for preparing the sliced silicon heterojunction battery as claimed in claim 1, wherein in the process of performing light injection annealing treatment on the cut surface of the sliced silicon heterojunction battery body, the sliced silicon heterojunction battery body is placed in an atmosphere, and only the cut surface of the sliced silicon heterojunction battery body is treated by a light source in a set temperature range by adopting a light injection annealing mode;
preferably, in the light injection annealing mode, the light source irradiates perpendicular to the cutting surface;
preferably, in the light injection annealing mode, the light source irradiation mode is continuous irradiation or intermittent irradiation, the total time range of the continuous irradiation is 20 s-2 min, and the total time range of the intermittent irradiation is 20 s-5 min;
preferably, in the intermittent irradiation, the single irradiation time of the light source ranges from 2ms to 20s, and the single intermittent time is preferably from 2s to 10 s;
preferably, in the light injection annealing method, the light intensity range is 20sun to 100 sun;
preferably, the light intensity is in the range of 30sun to 80 sun;
preferably, the set temperature range is 180 ℃ to 220 ℃.
7. The method for preparing the sliced silicon heterojunction battery as claimed in claim 6, wherein in the treatment process of performing the light injection annealing treatment on the cut surface of the sliced silicon heterojunction battery main body, the atmosphere gas is air or nitrogen;
preferably, the atmosphere gas is a mixed gas of oxygen and nitrogen, and the oxygen content of the mixed gas is more than 20%;
preferably, the atmosphere gas further comprises a portion of pure water vapor;
preferably, the light injection annealing mode comprises irradiating with light of different wavelengths, and the light source comprises infrared light, visible light, monochromatic light and white light;
preferably, the light source includes a laser, a halogen lamp, or an LED lamp.
8. The method for preparing the sliced silicon heterojunction battery as claimed in any one of claims 1 to 7, wherein the whole sliced silicon heterojunction battery is cut into a required shape by a laser or a lossless cutting machine to obtain the sliced silicon heterojunction battery main body.
9. A sliced silicon heterojunction battery is characterized by comprising a sliced silicon heterojunction battery main body, wherein the cutting surface of the sliced silicon heterojunction battery main body is processed by adopting the preparation method of the sliced silicon heterojunction battery as claimed in any one of claims 1 to 8;
the slice silicon heterojunction battery is at least one of an amorphous silicon/crystalline silicon heterojunction battery and an amorphous silicon/crystalline silicon heterojunction-perovskite laminated battery.
10. A solar cell module comprising the sliced silicon heterojunction cell of claim 9.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115148850A (en) * | 2022-06-27 | 2022-10-04 | 晶科能源股份有限公司 | Silicon wafer, preparation method thereof and passivation treatment solution |
| CN115148858A (en) * | 2022-08-01 | 2022-10-04 | 安徽华晟新能源科技有限公司 | Passivation method of silicon solar cell |
| CN115360270A (en) * | 2022-10-19 | 2022-11-18 | 北京晶澳太阳能光伏科技有限公司 | Solar cell and preparation method thereof |
| CN115841969A (en) * | 2022-12-12 | 2023-03-24 | 江苏宜兴德融科技有限公司 | Semiconductor device laser passivation equipment and passivation method |
| WO2023126152A1 (en) * | 2021-12-29 | 2023-07-06 | Rec Solar Pte. Ltd. | Methods of treatment & manufacture of a solar cell |
| CN117497644A (en) * | 2023-12-28 | 2024-02-02 | 浙江季丰电子科技有限公司 | Method for repairing solar cell cutting loss and application |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110042366A (en) * | 2019-04-18 | 2019-07-23 | 泰州隆基乐叶光伏科技有限公司 | Fixture, apparatus for atomic layer deposition and technique |
| CN111430506A (en) * | 2020-04-21 | 2020-07-17 | 天合光能股份有限公司 | Crystalline silicon solar cell and edge passivation method thereof |
| CN111952414A (en) * | 2020-08-21 | 2020-11-17 | 晶科绿能(上海)管理有限公司 | Post-cutting passivation method of silicon-based semiconductor device and silicon-based semiconductor device |
| CN112349811A (en) * | 2020-10-27 | 2021-02-09 | 浙江晶科能源有限公司 | Passivation method of battery piece |
| CN112582504A (en) * | 2020-12-24 | 2021-03-30 | 常州比太科技有限公司 | Integrated equipment and process for solar cell film coating and light injection |
-
2021
- 2021-04-16 CN CN202110417470.8A patent/CN113206172A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110042366A (en) * | 2019-04-18 | 2019-07-23 | 泰州隆基乐叶光伏科技有限公司 | Fixture, apparatus for atomic layer deposition and technique |
| CN111430506A (en) * | 2020-04-21 | 2020-07-17 | 天合光能股份有限公司 | Crystalline silicon solar cell and edge passivation method thereof |
| CN111952414A (en) * | 2020-08-21 | 2020-11-17 | 晶科绿能(上海)管理有限公司 | Post-cutting passivation method of silicon-based semiconductor device and silicon-based semiconductor device |
| CN112349811A (en) * | 2020-10-27 | 2021-02-09 | 浙江晶科能源有限公司 | Passivation method of battery piece |
| CN112582504A (en) * | 2020-12-24 | 2021-03-30 | 常州比太科技有限公司 | Integrated equipment and process for solar cell film coating and light injection |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023126152A1 (en) * | 2021-12-29 | 2023-07-06 | Rec Solar Pte. Ltd. | Methods of treatment & manufacture of a solar cell |
| CN115148850A (en) * | 2022-06-27 | 2022-10-04 | 晶科能源股份有限公司 | Silicon wafer, preparation method thereof and passivation treatment solution |
| CN115148850B (en) * | 2022-06-27 | 2023-06-02 | 晶科能源股份有限公司 | Silicon wafer, preparation method thereof and passivation treatment solution |
| CN115148858A (en) * | 2022-08-01 | 2022-10-04 | 安徽华晟新能源科技有限公司 | Passivation method of silicon solar cell |
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