CN115148858A - Passivation method of silicon solar cell - Google Patents
Passivation method of silicon solar cell Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 135
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 129
- 239000010703 silicon Substances 0.000 title claims abstract description 128
- 238000002161 passivation Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000005520 cutting process Methods 0.000 claims abstract description 62
- 238000002347 injection Methods 0.000 claims abstract description 52
- 239000007924 injection Substances 0.000 claims abstract description 52
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- 239000000243 solution Substances 0.000 claims abstract description 42
- 239000010410 layer Substances 0.000 claims abstract description 40
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 75
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 45
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 44
- 238000004140 cleaning Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 20
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- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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Abstract
The invention relates to the technical field of solar cells, and particularly provides a passivation method of a silicon solar cell. The passivation method of the silicon solar cell comprises the following steps: providing a silicon solar cell slice, wherein the silicon solar cell slice is provided with a cutting surface, the cutting surface is provided with a surface layer and a sub-surface layer, and the sub-surface layer of the cutting surface is positioned in the surface layer of the cutting surface; passivating the cutting surface in a passivating solution; and after the passivation treatment is carried out, carrying out light injection treatment on the cut surface, wherein the light injection treatment is suitable for forming polarity fixed charges on the surface layer and the subsurface layer of the cut surface and improving the electric potential of the surface layer and the subsurface layer of the cut surface. The passivation method for the silicon solar cell is used for processing, so that the silicon solar cell slice has a better passivation effect and better electrical property.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a passivation method of a silicon solar cell.
Background
The HJT (HeteroJunction) solar cell is a silicon-based cell which has the advantages of simple process flow, good weak light response, symmetrical structure, capability of being laminated and higher double-sided rate and conversion rate. Based on this, heterojunction cells have a very broad market value in the context of the "dual carbon" strategy. The heterojunction cell is usually prepared by four process links of cleaning and texturing, plasma Enhanced Chemical Vapor Deposition (PECVD), physical Vapor Deposition (PVD) and screen printing.
After the heterojunction cell is produced, it is also fabricated into an assembly. To reduce current consumption, the assembly is typically in a half-chip package. I.e. heterojunction cells, usually require TLS (Thermal Laser Separation) of the entire heterojunction cell by Laser scribing and splitting to obtain individual HJT half-cells. In the process of cutting the half piece, the laser scribing causes certain damage to the passivation layer and the film layer of the heterojunction battery, and the defect is introduced into the edge of the battery to form a composite center, so that the heterojunction battery has electrical property damage (also called cutting damage) after the laser scribing. Recombination is severe at the edge of the cut surface, which generally causes an efficiency loss of more than 0.3% for the heterojunction cell, resulting in further loss of the efficiency of the module.
However, the conventional edge passivation method requires long-time deposition at high temperature to form a passivation layer, and the high temperature causes the structure of the amorphous silicon thin film of the heterojunction battery to be damaged, thereby greatly reducing the passivation effect of the heterojunction battery. While the passivation effect has a great influence on the efficiency of the heterojunction cell. In fact, most solar cells of the other types currently available, not only heterojunction cells, have a passivating effect on their efficiency.
Therefore, improvement on the passivation method of the solar cell is urgently needed at present.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defect of poor passivation effect of the existing passivation method of the solar cell, and further provide a passivation method of the silicon solar cell.
The invention provides a passivation method of a silicon solar cell, which comprises the following steps: providing a silicon solar cell slice, wherein the silicon solar cell slice is provided with a cutting surface, the cutting surface is provided with a surface layer and a subsurface layer, the surface layer of the cutting surface is connected with the subsurface layer of the cutting surface, and the subsurface layer of the cutting surface is positioned on the inner side of the surface layer of the cutting surface; passivating the cutting surface in a passivating solution; and after the passivation treatment is carried out, carrying out light injection treatment on the cut surface, wherein the light injection treatment is suitable for forming polarity fixed charges on the surface layer and the subsurface layer of the cut surface and improving the electric potential of the surface layer and the subsurface layer of the cut surface.
Optionally, the illumination power density of the light injection treatment is 30kW/m 2 -60kW/m 2 。
Optionally, the time of the light injection treatment is 20s-30s.
Optionally, the light source for the light injection treatment includes an LED light source and a laser light source.
Optionally, the passivating solution is a solution of quinone hydroquinone dissolved in methanol.
Optionally, the concentration of the quinone hydroquinone in the methanol solution is from 0.0005mol/L to 0.005mol/L.
Optionally, before performing passivation on the cutting surface, the method further includes: and carrying out chemical cleaning treatment on the cutting surface.
Optionally, the cleaning solution for the chemical cleaning treatment is a hydrogen fluoride solution.
Optionally, the mass concentration of the hydrogen fluoride solution is 5-10%.
Optionally, the temperature of the chemical cleaning treatment is 10 ℃ to 30 ℃.
Optionally, the time of the chemical cleaning treatment is 5min to 10min.
Optionally, after the chemical cleaning treatment and before the passivation treatment, the method further includes: and carrying out first deionized water cleaning on the silicon solar cell slices.
Optionally, the temperature of the passivation treatment is 30-120 ℃, and the time of the passivation treatment is 10-60 min.
Optionally, after the passivation process and before the light injection process, the method further includes: and carrying out second deionized water cleaning on the silicon solar cell slices.
Optionally, after the silicon solar cell slice is subjected to second deionized water cleaning, the silicon solar cell slice is subjected to drying treatment at 70-90 ℃.
Optionally, after the silicon solar cell slice is dried, the silicon solar cell slice is thermally annealed.
Optionally, the temperature of the thermal annealing treatment is 140 ℃ to 200 ℃.
Optionally, the thickness of the surface layer of the cutting surface is 0.1nm-15nm, and the thickness of the subsurface layer of the cutting surface is 1nm-20nm.
Optionally, before the chemical cleaning process, the silicon solar cell slices are vertically placed with the cutting surfaces of the silicon solar cell slices facing upward, and the cutting surfaces of the silicon solar cell slices are purged with nitrogen gas to remove impurities.
The technical scheme of the invention has the following advantages:
according to the passivation method of the silicon solar cell, after the cutting surface is passivated in the passivation solution, the surface defect part of the cutting surface is repaired, and the preliminary passivation of the cutting surface is realized. On the basis, energy is injected into the cut surface of the silicon solar cell slice after the passivation treatment by further utilizing light injection treatment, so that the energy can penetrate through the surface layer of the cut surface of the silicon solar cell slice and act on a deeper sub-surface layer region to improve the potential of the surface layer and the sub-surface layer of the cut surface; when the surface potential is high, the obstruction that the carriers freely move to the surface is increased, and the probability that the carriers move to the surface is reduced, so that more carriers are driven to be separated from the surface, the recombination of the carriers at the surface defects is prevented, the passivation effect is further enhanced, and the photoelectric conversion efficiency of the silicon solar cell is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic flow diagram of a method of passivating a silicon solar cell in accordance with an embodiment of the present invention;
FIG. 2 is a schematic structural view of a cut surface of an untreated slice of a silicon solar cell according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a cut surface of a passivated silicon solar cell slice according to an embodiment of the invention;
fig. 4 is a schematic structural diagram of a cut surface of a silicon solar cell slice subjected to passivation treatment and light injection treatment according to an embodiment of the invention.
Description of reference numerals:
P 1 -a surface layer of a cut face of a silicon solar cell slice; p 2 -a subsurface layer of a cut face of a silicon solar cell slice.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The technical idea of the invention is as follows: the inventor tries to find out through various experiments that for a solar cell containing a silicon substrate, a special passivation solution, such as a quinone hydroquinone/methanol solution passivation scheme, can generate a better passivation effect on the silicon substrate; preferably, strengthening measures such as light injection are added, so that the efficiency of the solar cell can be greatly increased.
The embodiment provides a passivation method of a silicon solar cell, as shown in fig. 1, comprising the following steps:
step S1: providing a silicon solar cell slice, wherein the silicon solar cell slice is provided with a cutting surface, the cutting surface is provided with a surface layer and a subsurface layer, the surface layer of the cutting surface is connected with the subsurface layer of the cutting surface, and the subsurface layer of the cutting surface is positioned on the inner side of the surface layer of the cutting surface;
step S2: passivating the cutting surface in a passivating solution;
and step S3: and after the passivation treatment is carried out, carrying out light injection treatment on the cutting surface, wherein the light injection treatment is suitable for forming polarity fixed charges on the surface layer and the subsurface layer of the cutting surface and improving the electric potential of the surface layer and the subsurface layer of the cutting surface.
According to the passivation method of the silicon solar cell, after the cutting surface is passivated in the passivation solution, the surface defect part of the cutting surface is repaired, and the preliminary passivation of the cutting surface is realized. On the basis, energy is injected into the cut surface of the silicon solar cell slice after the passivation treatment by further utilizing light injection treatment, the energy can penetrate through the surface layer of the cut surface of the silicon solar cell slice and act on a deeper sub-surface layer area, and the potential of the surface layer and the sub-surface layer of the cut surface is improved, so that more current carriers are driven from the surface, the recombination of the current carriers at the surface defects is prevented, the field passivation effect is further enhanced, and the photoelectric conversion efficiency of the silicon solar cell is improved.
The principle of the present embodiment is illustratively explained with reference to fig. 2 to 4, where P is 1 Surface layer representing cut surface of silicon solar cell slice, P 2 Representing the subsurface layer of the cut surface of the silicon solar cell slice, and representing the direction of the cut surface from shallow to deep from right to left; furthermore, open circles represent silicon atoms, solid lines represent silicon-silicon covalent bonds, dashed lines represent dangling bonds, "+" represents positive charges, and "-" represents negative charges.
Fig. 2 is a schematic diagram of a cut surface of an unsliced silicon solar cell, wherein when the unsliced silicon solar cell is in saturation, silicon atoms on the surface of the silicon material are bonded (four pairs of covalent bonds are formed around each silicon atom). And the silicon atoms on the cut surface of the sliced battery are saturated and broken into bonds, and no other silicon atoms are arranged above the silicon atoms, so that a large number of dangling bonds are introduced into the surface layer of the cut surface, and the defect density of the subsurface layer of the cut surface is less than that of the surface layer. Therefore, in order to ensure good performance of the solar cell slice, the cut surface needs to be passivated.
A large number of dangling bonds exist on the surface layer of the untreated cutting surface, and the defect density of the subsurface layer of the cutting surface is smaller than that of the surface layer. Fig. 3 is a schematic structural view of a cut surface of a silicon solar cell slice after passivation treatment, in which QH anions are mainly combined with most dangling bonds of a surface layer during the passivation treatment of a silicon substrate with a quinone hydroquinone/methanol solution, so that the defect density of the surface is reduced. In addition, part of QH anions can also penetrate into the subsurface layer of the cut surface and are combined with part of dangling bonds of the layer, so that defects are reduced. In the above, the QH anion changes the electrical characteristics of the cut surface of the silicon substrate while saturating the dangling bond. This is because when QH anions are bonded to silicon dangling bonds on the cut surface, charge transfer occurs between the grafted QH anions and the silicon substrate to cause surface charge rearrangement, thereby generating surface dipoles. The QH anion is an electron acceptor in the silicon substrate surface functional group, with a negatively charged organic functional group. But due to the asymmetric distribution of charges, the generated surface dipoles can drain away a small amount of free electrons generated due to the presence of defects at the silicon surface, so that the free electrons are far away from the silicon surface, thereby achieving the field passivation effect. The surface dangling bond of the cutting surface is combined with the organic functional group with negative charges to achieve a passivation effect, the density of the surface dangling bond of the cutting surface is reduced, some positive charges are generated on the surface, the surface potential is improved, and the carrier is prevented from being compounded on the surface.
Fig. 4 is a schematic structural diagram of a cut surface of a silicon solar cell slice subjected to passivation treatment and light injection treatment, and due to the effect of the light injection treatment, the cut surface can be deeply penetrated into a subsurface layer, so that the density of dangling bonds on the surface layer of the cut surface is remarkably reduced while the density of dangling bonds on the surface layer of the cut surface is further reduced, positive charges are formed on the subsurface layer, the action width of a surface electric field is increased, the recombination of carriers is further hindered, the field passivation effect is enhanced, and the photoelectric conversion efficiency of a silicon solar cell is improved.
In this embodiment, the thickness of the surface layer of the cut surface is 0.1nm to 15nm, such as 0.1nm, 0.3nm, 0.5nm, 1nm, 3nm, 5nm, 10nm, or 15nm; the subsurface layer of the cut face has a thickness of 1nm to 20nm, for example 1nm, 3nm, 5nm, 10nm, 15nm or 20nm. Specifically, the effect of passivating the cutting surface in the passivating solution is limited to the surface layer of the cutting surface, and the light injection treatment can simultaneously act on the surface layer and the sub-surface layer region of the cutting surface.
In this embodiment, the illumination power density of the light injection process is 30kW/m 2 -60kW/m 2 For example 30kW/m 2 、35kW/m 2 、40kW/m 2 、45kW/m 2 、50kW/m 2 、55kW/m 2 Or 60kW/m 2 . The magnitude of the illumination power density is related to the effect of light injection and also to the temperature change of the silicon solar cell after the illumination to the surface of the silicon solar cell. When the illumination power density is small, the action depth of light injection is shallow, only a certain effect is achieved on the surface layer area of the cutting surface, the light injection cannot effectively act on the sub-surface layer area of the cutting surface, and the passivation effect is poor; when the illumination power density is larger, the light injection depth is deeper, and the electric potentials of the surface layer and the sub-surface layer of the cutting surface are fully improved, so that the charges of the surface layer and the sub-surface layer of the cutting surface of the silicon solar cell slice are rearranged, the combination of current carriers at the surface defects is prevented, and the passivation effect is better. However, higher illumination power density cannot be adopted as much as possible because when the illumination power density is smaller, the light injection treatment needs longer time to inject enough energy, and the long-time low illumination power density injection causes the temperature change degree of the silicon solar cell to be smaller, so that the temperature of the silicon solar cell is easier to control; when the illumination power density is large, the sufficient light injection energy can be obtained only by short light injection processing time, and the temperature of the silicon solar cell is changed to a large extent by high illumination power density injection in a short time, so that the temperature control of the silicon solar cell becomes difficult. Therefore, the relatively low illumination power density is beneficial to controlling the temperature of the silicon solar cell during the light injection treatment. In summary, the illumination power density by the light injection process is limited to 30kW/m 2 -60kW/m 2 On one hand, the depth of light injection is controlled, and on the other hand, the temperature control of the silicon solar cell slice in the light injection treatment process is facilitated. At this illumination power density, the cell surface temperature generally does not rise above 5 ℃ within a treatment time of 2 min. When the temperature of the surface of the cell rises to be within 5 ℃, the influence on the performance of the silicon solar cell is within an allowable range.
In a specific embodiment, the time of the light injection treatment is 20s-30s, and the light source of the light injection treatment comprises an LED light source and a laser light source. Specifically, when the light source of the light injection treatment is an LED light source with high power density, the time of the light injection treatment is 25s-30s; when the light source of the light injection treatment is a laser light source, the time of the light injection treatment is 20s-25s.
In this embodiment, the passivation solution is a solution of quinone hydroquinone dissolved in methanol. The specific principle of solution passivation is as follows: taking silicon solar cell slices as an example, in a solution in which quinone hydroquinone is dissolved in methanol (hereinafter expressed using a quinone hydroquinone/methanol solution), the quinone molecules among the quinone hydroquinone molecules react actively with the surface of the silicon substrate, while the hydroquinone molecules react less actively with the surface of the silicon substrate. On the silicon surface, a part of silicon atoms form H-Si-Si-H with hydrogen bonds, and the other part forms SiH 2 . During passivation, the Benzoquinone (BQ) molecule removes the H atom from the H-Si surface to become a hydroquinone (QH) anion, followed by reaction of the Si cation to form QH-Si. On the other hand, the QH anion derives a proton from methanol, producing a methanol anion, which reacts with the Si cation to form methoxy silicon. The adsorption energy of QH anions and methanol anions on the surface of a silicon substrate in the solution is different, and when the QH anions are excessive, competitive adsorption exists between the QH anions and the methanol anions. When passivation begins, the grafting rate of QH anions on the surface of H-Si is high, and a large amount of QH anions cover the surface of a silicon substrate. Because the adsorption energy of the methanol anion is lower, the methanol anion gradually replaces the QH anion which is grafted on the surface of the silicon substrate along with the passivation. In the process of passivating the silicon substrate by the quinone hydroquinone/methanol solution, QH anions saturate dangling bonds and simultaneously change the electrical characteristics of the cutting surface of the silicon substrate. When QH anions bind to silicon dangling bonds on the cut surface, charge transfer between the grafted QH anions and the silicon substrate occurs resulting in surface charge rearrangement, thereby creating a surface dipole. QH anions and methanol anions are electron acceptors in functional groups on the surface of a silicon substrate, and due to asymmetric charge distribution, generated surface dipoles repel silicon surface electrons (ideal silicon crystals have no free electrons, but can generate a small amount of free electrons due to defects at the interface) away from the silicon surface, so that a field passivation effect is achieved. Deactivated by quinone Hydroquinone/methanol solutionThe potential value of the silicon surface after treatment is much larger than that of the silicon surface subjected to natural oxidation, which indicates that surface dipoles generated by the quinone hydroquinone/methanol solution passivation treatment of the silicon substrate form good field effect passivation. In addition, during the process of passivating the silicon substrate by the quinone hydroquinone/methanol solution, a free radical-initiated quinone oligomerization effect is generated, pi bonds in benzoquinone molecules are accumulated on the surface of a monomolecular layer, so that the thickness of the surface passivation layer is thicker than that of the quinone hydroquinone monomolecular layer, and the thickness of the surface passivation layer slightly increases along with the prolonging of the passivation treatment time due to the continuous accumulation of the pi bonds in the benzoquinone molecules as the passivation is carried out, but the thickness of the surface passivation layer does not exceed the thickness of the surface layer of the cut surface. Namely: the lower limit of the thickness of the surface layer is the thickness of the passivation layer, i.e. the thickness of a few molecular layers.
Further, the concentration of the quinone hydroquinone/methanol solution is 0.0005mol/L to 0.005mol/L. Specifically, the temperature of the passivation treatment is 30 ℃ to 120 ℃, for example, 30 ℃, 50 ℃, 20 ℃, 25 ℃ or 30 ℃. The time of the passivation treatment is 10min-60min, such as 10min, 20min, 30min, 40min, 50min or 60min.
In this embodiment, before passivating the cutting surface, the method further includes: and carrying out chemical cleaning treatment on the cutting surface.
In a specific embodiment, the cleaning liquid of the chemical cleaning process is a hydrogen fluoride solution. Specifically, the mass concentration of the hydrogen fluoride solution is 5% to 10%, for example, 5%, 6%, 7%, 8%, 9%, or 10%. Specifically, the temperature of the chemical cleaning treatment is 10 ℃ to 30 ℃, for example, 10 ℃, 15 ℃, 20 ℃, 25 ℃ or 30 ℃. Specifically, the time of the chemical cleaning treatment is 5min to 10min, such as 5min, 6min, 7min, 8min, 9min or 10min. By adjusting the concentration of the cleaning liquid, the cleaning temperature and the cleaning time in the chemical cleaning process, the oxide layer on the cutting surface of the silicon solar cell slice can be dissolved and removed. The oxide layer is a contaminant formed by the reaction of silicon and oxygen as the silicon solar cell slices are exposed to air.
In this embodiment, after the chemical cleaning process and before the passivation process, the method further includes: and carrying out first deionized water cleaning on the silicon solar cell slices. The first deionized water cleaning can remove pollutants remained on the surface of the silicon solar cell slice after chemical cleaning.
In one embodiment, after the passivation process and before the light injection process, the method further includes: and carrying out second deionized water cleaning on the silicon solar cell slices. The second deionized water cleaning can remove the pollutants remained on the surface of the silicon solar cell slice after the passivation treatment.
In one embodiment, after the second deionized water washing is carried out on the silicon solar cell slice, the silicon solar cell slice is dried under the condition of 70-90 ℃.
In this embodiment, after the silicon solar cell slices are dried, thermal annealing is performed on the silicon solar cell slices. Specifically, the temperature of the thermal annealing treatment is 100 ℃ to 200 ℃, for example, 100 ℃, 120 ℃, 150 ℃, 180 ℃ or 200 ℃. The thermal annealing treatment can improve or eliminate the defects and residual stress formed during the production of the silicon solar cell slices, prevent deformation and cracking and improve the mechanical strength.
In one embodiment, prior to the chemical cleaning process, the silicon solar cell slices are placed vertically with the cut surfaces of the silicon solar cell slices facing upward, e.g., the silicon solar cell slices are inserted vertically into a basket of flowers, and the cut surfaces of the silicon solar cell slices are purged with nitrogen gas to remove impurities.
The slices of silicon solar cells which were not passivated, passivated with a single quinohydroquinone/methanol solution, treated with a single light injection and treated with the passivation method of this example were subjected to the SunsVoc test under the respective test conditions: non-passivated, single quinone hydroquinone/methanol solution passivated, single light injection treated, quinone hydroquinone/methanol solution passivated + light injection treated (i.e., passivated process treatment of this example). The test parameters were set as follows: the concentration of the quinohydroquinone in the methanol solution is 0.0025mol/L, the passivation temperature is 90 ℃, and the passivation time is 30min; the light source for light injection treatment is LED light sourceThe open power density is 40kW/m 2 The time of the light injection treatment was 30 seconds. The obtained test results are shown in table 1, in which Voc represents an open circuit voltage, pFF represents a fill factor, pEta represents photoelectric conversion efficiency, and Rser represents a characteristic resistance.
TABLE 1
As can be seen from table 1, the photoelectric conversion efficiency of the silicon solar cell slices processed by the single hydroquinone/methanol solution passivation treatment, the single light injection treatment and the passivation method of the present embodiment is improved compared with that of the silicon solar cell slices without passivation treatment, and particularly, the photoelectric conversion efficiency of the silicon solar cell slices processed by the passivation method of the present embodiment is further improved by 0.48% compared with that of the silicon solar cell slices processed by the single hydroquinone/methanol solution passivation treatment and the single light injection treatment. The open circuit voltage and fill factor of the silicon solar cell slices processed by the passivation method of this example are also the maximum of the four test scenarios, and the corresponding characteristic resistance takes the minimum value.
The test result proves that the silicon solar cell slices treated by the passivation method of the embodiment have better passivation effect and better electrical property. Therefore, after the cutting surface is passivated in the passivation solution, light injection treatment is further adopted, so that the passivation effect can be enhanced and the photoelectric conversion efficiency of the silicon solar cell is improved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A method of passivating a silicon solar cell, comprising:
providing a silicon solar cell slice, wherein the silicon solar cell slice is provided with a cutting surface, the cutting surface is provided with a surface layer and a subsurface layer, the surface layer of the cutting surface is connected with the subsurface layer of the cutting surface, and the subsurface layer of the cutting surface is positioned on the inner side of the surface layer of the cutting surface;
passivating the cutting surface in a passivating solution;
and after the passivation treatment is carried out, carrying out light injection treatment on the cutting surface, wherein the light injection treatment is suitable for forming polar charges on the surface layer and the subsurface layer of the cutting surface and improving the electric potential of the surface layer and the subsurface layer of the cutting surface.
2. Method for passivating silicon solar cells according to claim 1, characterized in that the light injection treatment has an illumination power density of 30kW/m 2 -60kW/m 2 ；
Preferably, the time of the light injection treatment is 20s-30s;
preferably, the light source for the light injection treatment includes an LED light source and a laser light source.
3. The method of passivating a silicon solar cell according to claim 1, wherein the passivating solution is a solution of quinone hydroquinone dissolved in methanol;
preferably, the concentration of the quinone hydroquinone in the methanol solution is from 0.0005mol/L to 0.005mol/L.
4. The method of passivating a silicon solar cell according to claim 1, further comprising, before passivating the cut surfaces: carrying out chemical cleaning treatment on the cut surface;
preferably, the cleaning liquid for the chemical cleaning treatment is a hydrogen fluoride solution;
preferably, the mass concentration of the hydrogen fluoride solution is 5-10%;
preferably, the temperature of the chemical cleaning treatment is 10-30 ℃;
preferably, the time of the chemical cleaning treatment is 5min to 10min.
5. The method of passivating a silicon solar cell of claim 4, further comprising, after said chemical cleaning process and prior to said passivating process: and carrying out first deionized water cleaning on the silicon solar cell slices.
6. Method for passivating silicon solar cells according to any of claims 1 to 5, wherein the temperature of the passivation treatment is between 30 ℃ and 120 ℃ and the time of the passivation treatment is between 10min and 60min.
7. The method of passivating a silicon solar cell according to any of claims 1-5, further comprising, after the passivating treatment and before the light injection treatment process: carrying out second deionized water cleaning on the silicon solar cell slices;
preferably, after the silicon solar cell slices are subjected to second deionized water cleaning, the silicon solar cell slices are subjected to drying treatment at 70-90 ℃.
8. The method of passivating silicon solar cells as defined in claim 7, wherein the slices of silicon solar cells are subjected to a thermal annealing process after being subjected to a drying process;
preferably, the temperature of the thermal annealing treatment is 140-200 ℃.
9. Method for passivating silicon solar cells according to any of claims 1 to 5, characterized in that the thickness of the surface layer of the cut faces is 0.1nm to 15nm and the thickness of the subsurface layer of the cut faces is 1nm to 20nm.
10. The method of passivating silicon solar cells according to claim 4 or 5, wherein, prior to the chemical cleaning process, the silicon solar cell slices are placed vertically with their cut surfaces facing upwards, and the cut surfaces of the silicon solar cell slices are purged with nitrogen gas to remove impurities.
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