CN113130712A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN113130712A CN113130712A CN202110405003.3A CN202110405003A CN113130712A CN 113130712 A CN113130712 A CN 113130712A CN 202110405003 A CN202110405003 A CN 202110405003A CN 113130712 A CN113130712 A CN 113130712A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 35
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- 239000010703 silicon Substances 0.000 claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 66
- 238000000151 deposition Methods 0.000 claims abstract description 63
- 238000002347 injection Methods 0.000 claims abstract description 53
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- 230000008569 process Effects 0.000 claims abstract description 51
- 230000008021 deposition Effects 0.000 claims abstract description 31
- 238000002161 passivation Methods 0.000 claims abstract description 30
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- 238000005520 cutting process Methods 0.000 claims description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims description 23
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 22
- 229910017604 nitric acid Inorganic materials 0.000 claims description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
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- 239000001257 hydrogen Substances 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 7
- 210000004027 cell Anatomy 0.000 description 62
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a solar cell and a preparation method thereof, wherein the preparation method comprises the following steps: texturing, amorphous silicon film deposition, conducting layer deposition and metallization are sequentially carried out on the surface of a silicon wafer to obtain a whole cell, the whole cell is sliced to obtain a segmented cell, and light injection is carried out on the segmented cell to obtain the solar cell. Compared with the traditional preparation process, the method adjusts the sequence of light injection and slicing, the slicing is performed before the light injection, the sliced battery is subjected to the light injection, and the efficiency can be improved again in the hydrogen passivation process.
Description
Technical Field
The invention belongs to the technical field of solar cells, relates to a solar cell and a preparation method thereof, and particularly relates to a heterojunction solar cell and a preparation method thereof.
Background
The photovoltaic cell industry is essentially a technology-intensive industry, and the technical innovation is that photovoltaics finally become the leading energy and become the basis of the moderate power for promoting energy transformation. The heterojunction cell technology is taken as an efficient technical route which attracts high attention of the industry in recent years, and has the advantages of higher photoelectric conversion efficiency and double-faced property, simple process flow, high efficiency-improving potential and large cost-reducing space, so that strong development power is brought to the photovoltaic industry.
Compared with the mass production bottleneck of 23.5% conversion rate of the existing mainstream single crystal PERC high-efficiency battery technology, the heterojunction battery has the great conversion efficiency advantage, the average current mass production efficiency of the heterojunction battery is over 24%, the highest production line efficiency even reaches 24.5%, and the future production rate is expected to reach 25%.
The heterojunction cell comprises a monocrystalline silicon substrate, intrinsic amorphous silicon layers respectively arranged on two opposite end faces of the monocrystalline silicon substrate, a p-type amorphous silicon layer and an n-type amorphous silicon layer respectively arranged on the intrinsic amorphous silicon layers on the two faces, transparent conductive layers respectively arranged on the p-type amorphous silicon layer and the n-type amorphous silicon layer, and silver gate electrodes respectively arranged on the transparent conductive layers on the two faces.
CN111293195A discloses a method for manufacturing a heterojunction battery, wherein the heterojunction battery comprises conductive thin film layers respectively disposed on the front and/or back of the heterojunction battery, and the method for manufacturing the heterojunction battery comprises removing the conductive thin film layers in a set region of the front and/or back of the heterojunction battery by an inkjet process.
CN110649128A discloses a preparation method of a high-efficiency heterojunction battery piece, wherein laser pre-cutting is performed on the front side of a silicon wafer for preparing the battery piece to form a cutting groove, and then the following steps are sequentially performed: and (3) texturing, forming specific amorphous silicon on the front side and the back side, plating TCO films on the front side and the back side, printing electrodes on the front side and the back side, curing, testing and sorting to obtain the heterojunction cell.
CN109075218A discloses a method for preparing a solar heterojunction cell, the method comprising: depositing a first intrinsic silicon passivation layer and a first silicon doping layer on the first surface of a silicon wafer in sequence, and depositing a second intrinsic silicon passivation layer and a second silicon doping layer on the second surface of the silicon wafer in sequence; depositing a first water-doped transparent conducting layer on the first silicon doped layer; depositing a second water-doped transparent conducting layer on the second silicon doped layer; and forming a first electrode and a second electrode on the first water-doped transparent conductive layer and the second water-doped transparent conductive layer respectively.
The technology mainly used at the present stage is to cut the prepared heterojunction cell into half or smaller cell pieces by adopting laser, but the problems that the cutting loss caused by edge recombination is introduced to the photovoltaic cell during cutting, and the conversion efficiency downshifting after cutting is serious exist at present.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a solar cell and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for manufacturing a solar cell, the method comprising: texturing, amorphous silicon film deposition, conducting layer deposition and metallization are sequentially carried out on the surface of a silicon wafer to obtain a whole cell, the whole cell is sliced to obtain a segmented cell, and light injection is carried out on the segmented cell to obtain the solar cell.
The invention provides a preparation method of a solar cell, compared with the traditional preparation process, the preparation method adjusts the sequence of light injection and slicing, and the slicing is carried out before the light injection, the traditional preparation process comprises the steps of texturing, amorphous silicon film deposition, conductive layer deposition, metallization, light injection, testing and slicing, and the preparation process comprises the steps of texturing, amorphous silicon film deposition, conductive layer deposition, metallization, slicing, light injection and testing. The reason for adjusting the light injection and slicing sequence is that the light injection can passivate defects in the cell body, but hydrogen escape and edge recombination in the slicing process cause the efficiency of the solar cell to be reduced, and experiments show that the efficiency of the sliced cell can be improved again in the hydrogen passivation process after the light injection. Therefore, the light injection process before slicing can be omitted, the sliced cell is subjected to light injection instead, and the hydrogen passivation process is completed while partial cutting loss is recovered. In addition, the solar cell may have a non-uniform phenomenon due to the influence of a silicon wafer or a process. Although the whole battery is tested and sorted, the situation that the efficiency of a plurality of pieces is inconsistent still exists after the whole battery is cut into the plurality of pieces, so that the pieces with different efficiencies are linked to prepare the assembly, the battery mismatch is caused, and the assembly power is influenced. And the influence of mismatch can be reduced by using the fragments for testing.
As a preferred technical solution of the present invention, the solar cell is a heterojunction solar cell.
Preferably, the silicon wafer is of single crystal N-type.
Preferably, the silicon wafer has a resistivity of 1 to 7. omega. cm, and may be, for example, 1. omega. cm, 2. omega. cm, 3. omega. cm, 4. omega. cm, 5. omega. cm, 6. omega. cm or 7. omega. cm, but the silicon wafer is not limited to the above-mentioned values, and other values not mentioned in the above-mentioned range of values are also applicable.
Preferably, the thickness of the silicon wafer is 100 to 160 μm, and may be, for example, 100 μm, 105 μm, 110 μm, 115 μm, 120 μm, 125 μm, 130 μm, 135 μm, 140 μm, 145 μm, 150 μm, 155 μm or 160 μm, but is not limited to the values listed, and other values not listed in the range of the values are also applicable.
As a preferable technical scheme, after the silicon wafer is subjected to texturing, a pyramid textured surface is formed on the surface of the silicon wafer, so that the textured silicon wafer is obtained.
The texturing cleaning aims at cleaning oil stains on the surface of a silicon wafer, removing a surface damage layer and an oxidation layer, preparing a texture surface with lower reflectivity on the surface of the silicon wafer, and mainly using chemical reagents such as NaOH, HF or HCl to corrode the silicon wafer to finish the following processes:
(1) removing the mechanical damage layer on the surface of the silicon wafer; (2) the surface of the silicon wafer is subjected to concave-convex surface treatment to form a pyramid suede, so that the refraction times of light on the surface of the solar cell sheet are increased, the absorption of the solar cell on the light is facilitated, and the maximum utilization rate of the solar cell on the solar value is achieved; (3) and removing sodium silicate, oxide, oil stain and metal ion impurities on the surface of the silicon wafer.
Preferably, the textured silicon wafer has a surface reflectance of 10 to 15%, for example, 10%, 10.5%, 11%, 11.5%, 12%, 12.5%, 13%, 13.5%, 14%, 14.5% or 15%, but is not limited to the recited values, and other values not recited within the range are also applicable.
As a preferred technical solution of the present invention, the amorphous silicon thin film comprises an intrinsic amorphous silicon layer and a doped amorphous silicon layer, and the deposition process of the amorphous silicon thin film comprises: and depositing an intrinsic amorphous silicon layer on the surfaces of the two sides of the textured silicon wafer respectively, and depositing a doped amorphous silicon layer on the surfaces of the intrinsic amorphous silicon layers on the two sides respectively.
Preferably, the intrinsic amorphous silicon layer is deposited by plasma chemical vapor deposition.
Preferably, the thickness of the intrinsic amorphous silicon layer on one side is 5 to 25nm, and may be, for example, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 21nm, 22nm, 23nm, 24nm or 25nm, but is not limited to the enumerated values, and other values not enumerated within the numerical range are also applicable.
Preferably, the doped amorphous silicon layer is deposited by plasma chemical vapor deposition.
Preferably, the thickness of the single-sided doped amorphous silicon layer is 5 to 40nm, and may be, for example, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm or 40nm, but is not limited to the recited values, and other values not recited within the range of values are also applicable.
Preferably, an N-type doped amorphous silicon film layer is deposited on the surface of the intrinsic amorphous silicon layer on one side, and a P-type doped amorphous silicon film layer is deposited on the surface of the intrinsic amorphous silicon layer on the other side.
The heterojunction solar cell provided by the invention is of a sandwich structure, the center layer is a silicon wafer, the surfaces of the two sides of the silicon wafer are respectively provided with an intrinsic amorphous silicon layer, the thicknesses of the intrinsic amorphous silicon layers on the two sides can be the same or different, the surface of the intrinsic amorphous silicon layer on one side is provided with an N-type doped amorphous silicon film layer, the surface of the intrinsic amorphous silicon layer on the other side is provided with a P-type doped amorphous silicon film layer, and the N-type doped amorphous silicon film layer and the P-type doped amorphous silicon film layer are arranged.
As a preferred technical solution of the present invention, the conductive layer deposition process includes: and respectively depositing a conductive layer on the surfaces of the doped amorphous silicon layers on the two sides.
The transparent conducting film prepared by the conducting layer (transparent conducting layer) is mainly used as a transparent electrode of a solar cell on the solar cell to form good ohmic contact, and the transition metal-silicon reduces the recombination loss when carriers flow parallel to the surface of a silicon wafer and increases the collection efficiency of the loaded carriers; the surface passivation effect is achieved, and some of the film can also be used as an antireflection film. The different transparent conductive layers have different electrical, optical and structural characteristics, and also have different effects on the photoelectric characteristics and output characteristics of the solar cell (such as internal and external quantum efficiency, short-circuit current, open-circuit voltage, fill factor, etc. of the cell). In general, the requirements for a transparent conductive layer in a solar cell include high carrier concentration, large band gap width, good photoelectric characteristics, stable chemical properties, low specific resistance, high mechanical strength, and excellent wear resistance. The common preparation process of the transparent conductive layer comprises the following steps: sputtering methods (including magnetron sputtering, ion beam sputtering and the like) and evaporation methods (including thermal evaporation, ion beam evaporation and the like), the sputtering method has better process stability, and the quality of the prepared film is also better.
Preferably, the deposition mode of the conductive layer is magnetron sputtering or reactive plasma deposition.
Preferably, the material of the conductive layer comprises any one or a combination of at least two of ITO, IWO, ITiO or AZO.
The conductive layer preferably has a thickness of 50 to 110nm, and may be, for example, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, 105nm or 110nm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, the sheet resistance of the conductive layer is 30 to 90 Ω/□, such as 30 Ω/□, 35 Ω/□, 40 Ω/□, 45 Ω/□, 50 Ω/□, 55 Ω/□, 60 Ω/□, 65 Ω/□, 70 Ω/□, 75 Ω/□, 80 Ω/□, 85 Ω/□ or 90 Ω/□, but not limited to the listed values, and other values not listed in the range of values are also applicable.
It should be noted that Ω/□ is a unit of sheet resistance known in the art, i.e. ohm/square, and refers to the resistance between the edges of a square of thin film conductive material, and the sheet resistance has a characteristic that the resistance between the edges of any size of square is the same, and the sheet resistance is the same regardless of whether the edge is 1 meter or 0.1 meter, so that the sheet resistance is only related to the thickness of the conductive film. □ in Ω/□ did not show an error.
As a preferred technical solution of the present invention, the metallization process includes: and covering the surfaces of the conductive thin film layers on the two sides with metal electrodes respectively, and curing the metal electrodes.
Preferably, the covering mode is any one of screen printing, laser transfer printing or electroplating.
Preferably, the metal electrode is divided into a main grid and an auxiliary grid, and the main grid and the auxiliary grid are perpendicular to each other.
Preferably, the number of the main grids is 0 to 12, the main grids are parallel to each other, and for example, the number of the main grids may be 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12, but the main grids are not limited to the enumerated values, and other non-enumerated values in the numerical range are also applicable.
Preferably, the width of the main gate is 0 to 100 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, but is not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the number of the secondary grids is 90 to 180, the secondary grids are parallel to each other, for example, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175 or 180, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, the width of the sub-gate is 15 to 50 μm, for example, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm or 50 μm, but is not limited to the values listed, and other values not listed in the range of the values are also applicable.
It should be noted that, the front surface and the back surface of the heterojunction solar cell provided by the invention are both provided with metal electrodes, the number of main grids arranged on the front surface and the number of main grids arranged on the back surface can be the same or different, the number of auxiliary grids arranged on the front surface and the number of auxiliary grids arranged on the back surface can be the same or different, the width of the main grids arranged on the front surface and the width of the main grids arranged on the back surface can be the same or different, the width of the auxiliary grids arranged on the front surface and the width of the auxiliary grids arranged on the back surface can be the same or different, and in short, the metal electrodes on the front surface and the metal electrodes on the back surface can be respectively and independently.
Preferably, the curing temperature is 175 to 210 ℃, for example 175 ℃, 180 ℃, 185 ℃, 190 ℃, 195 ℃, 200 ℃, 205 ℃ or 210 ℃, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the curing time is 5-40 min, such as 5min, 10min, 15min, 20min, 25min, 30min, 35min or 40min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
As a preferred technical scheme of the invention, the whole battery is sliced by laser cutting.
Preferably, after slicing is completed, cooling is carried out on the cutting surface of the sliced battery.
Preferably, the temperature reduction treatment adopts liquid nitrogen spraying.
According to the invention, the cutting damage of the battery is reduced in a rapid cooling mode, the section generated by cutting the battery is processed to form a new passivation layer, and the structural damage of the battery caused by cutting is repaired.
Preferably, after the temperature reduction and cooling are finished, the cutting surface of the segmented battery is subjected to surface passivation treatment.
Preferably, the surface passivation treatment adopts ozone treatment or concentrated nitric acid treatment.
As a preferred technical scheme of the invention, the ozone treatment process comprises the following steps: the surface passivation is performed at 10 to 200 ℃ in an ozone atmosphere to form a passivation layer on the cut surface of the divided cell, and the passivation layer may be, for example, 10 ℃, 20 ℃, 30 ℃, 40 ℃, 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃, 130 ℃, 140 ℃, 150 ℃, 160 ℃, 170 ℃, 180 ℃, 190 ℃ or 200 ℃, but is not limited to the enumerated values, and other values not enumerated within the range of the enumerated values are also applicable.
Preferably, the ozone treatment time is 1-10 s, such as 1s, 2s, 3s, 4s, 5s, 6s, 7s, 8s, 9s or 10s, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the concentrated nitric acid treatment process comprises: and immersing the cut surface of the segmented battery in concentrated nitric acid for 10-20 min, and taking out the cut surface of the segmented battery to form a passivation layer, wherein the passivation layer can be formed on the cut surface of the segmented battery, and can be 10min, 11min, 12min, 13min, 14min, 15min, 16min, 17min, 18min, 19min or 20min, but is not limited to the enumerated numerical values, and other non-enumerated numerical values in the numerical value range are also applicable.
Preferably, the concentrated nitric acid has a concentration of 40 to 50 wt%, for example, 40 wt%, 41 wt%, 42 wt%, 43 wt%, 44 wt%, 45 wt%, 46 wt%, 47 wt%, 48 wt%, 49 wt% or 50 wt%, but is not limited to the recited values, and other values not recited within the range are also applicable.
Preferably, the concentrated nitric acid has a temperature of 30 to 40 ℃, for example, 30 ℃, 31 ℃, 32 ℃, 33 ℃, 34 ℃, 35 ℃, 36 ℃, 37 ℃, 38 ℃, 39 ℃ or 40 ℃, but is not limited to the recited values, and other values not recited within the range of values are also applicable.
As a preferred technical solution of the present invention, the light source used in the light injection process is an LED or a xenon lamp.
Preferably, the light injection time is 5 to 30s, for example, 5s, 10s, 15s, 20s, 25s or 30s, but is not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the temperature of the light injection is 150 to 250 ℃, for example, 150 ℃, 160 ℃, 170 ℃, 180 ℃, 190 ℃, 200 ℃, 210 ℃, 220 ℃, 230 ℃, 240 ℃ or 250 ℃, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.
In a second aspect, the invention provides a solar cell prepared by the preparation method of the first aspect.
It should be noted that the solar cell prepared by the preparation method provided by the present invention is a heterojunction solar cell, and the preparation process is adjusted to move the slice to be performed before light injection, so that the conversion efficiency of the heterojunction solar cell is not greatly attenuated compared with that before the slice, and the conversion efficiency of the heterojunction solar cell prepared by the preparation method provided by the present invention is still maintained above 24%.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a preparation method of a solar cell, compared with the traditional preparation process, the preparation method adjusts the sequence of light injection and slicing, and the slicing is carried out before the light injection, the traditional preparation process comprises the steps of texturing, amorphous silicon film deposition, conductive layer deposition, metallization, light injection, testing and slicing, and the preparation process comprises the steps of texturing, amorphous silicon film deposition, conductive layer deposition, metallization, slicing, light injection and testing. The reason for adjusting the light injection and slicing sequence is that the light injection can passivate defects in the cell body, but hydrogen escape and edge recombination in the slicing process cause the efficiency of the solar cell to be reduced, and experiments show that the efficiency of the sliced cell can be improved again in the hydrogen passivation process after the light injection. Therefore, the light injection process before slicing can be omitted, the sliced cell is subjected to light injection instead, and the hydrogen passivation process is completed while partial cutting loss is recovered. In addition, the solar cell may have a non-uniform phenomenon due to the influence of a silicon wafer or a process. Although the whole battery is tested and sorted, the situation that the efficiency of a plurality of pieces is inconsistent still exists after the whole battery is cut into the plurality of pieces, so that the pieces with different efficiencies are linked to prepare the assembly, the battery mismatch is caused, and the assembly power is influenced. And the influence of mismatch can be reduced by using the fragments for testing.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments.
Example 1
The embodiment provides a preparation method of a solar cell, which specifically comprises the following steps:
(1) texturing a monocrystalline N-type silicon wafer with the resistivity of 5 omega cm and the thickness of 150 mu m, roughly polishing by using KOH, texturing by using KOH and a texturing additive, and finally cleaning by RCA cleaning to form a pyramid textured surface on the surface of the monocrystalline N-type silicon wafer to obtain a textured silicon wafer, wherein the surface reflectivity of the textured silicon wafer of the silicon wafer is 12.5%;
(2) depositing an intrinsic amorphous silicon layer on the two side surfaces of the textured silicon wafer by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2The thickness of the intrinsic amorphous silicon layer on one side is 10 nm; depositing an N-type doped amorphous silicon film layer with the thickness of 20nm on the surface of the intrinsic amorphous silicon layer on one side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing a 15nm thick P-type doped amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the other side by plasma Chemical Vapor Deposition (CVD), wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2，；
(3) Respectively depositing an ITO conductive layer on the surfaces of the amorphous silicon-doped layers on the two sides by adopting magnetron sputtering, wherein the distance between an ITO target and a substrate is 6cm, and in the working process, a mechanical pump and a molecular pump are sequentially used for pumping the vacuum degree of a cavity to 5 multiplied by 10- 4Pa, introducing argonKeeping the air flow at 35mL/min, adjusting the working air pressure to 0.5Pa after 10 minutes of introduction, beginning to deposit an ITO conductive layer on the substrate after pre-sputtering for 15 minutes, wherein the deposition time is 5 minutes, taking out the ITO conductive layer after the deposition is finished, the thickness of the conductive layer on one side is 110nm, and the sheet resistance of the conductive layer is 80 omega/□;
(4) the surfaces of the conductive thin film layers on the two sides are respectively covered with silver metal electrodes in a screen printing mode, the silver metal electrodes are divided into main grids and auxiliary grids, the number of the main grids on the surface of one side is 9, the width of the main grids is 60 mu m, the main grids are parallel to each other, the number of the auxiliary grids is 80, the width of the auxiliary grids is 35 mu m, the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are perpendicular to each other; the number of the main grids on the other side surface is 9, the width is 60 mu m, all the main grids are parallel to each other, the number of the auxiliary grids is 110, the width of the auxiliary grids is 35 mu m, all the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are vertical to each other; then, the silver metal electrode is solidified at the temperature of 200 ℃, and the solidification time is 30 min;
(5) adopt laser cutting to slice whole piece battery, after the section was accomplished, the mode that adopts the liquid nitrogen to spray cooled down the cutting plane of burst battery, after cooling down, carries out ozone treatment to the cutting plane of burst battery, and ozone treatment process includes: putting the segmented battery into ozone atmosphere, and performing surface passivation treatment for 6s at 100 ℃ to form a passivation layer on the cutting surface of the segmented battery;
(6) and (3) injecting light into the segmented battery by adopting an LED, wherein the light intensity is 40 solar light intensities, the light injection time is 30s, and the light injection temperature is 200 ℃.
Example 2
The embodiment provides a preparation method of a solar cell, which specifically comprises the following steps:
(1) texturing a monocrystalline N-type silicon wafer with the resistivity of 1 omega cm and the thickness of 100 mu m, roughly polishing by using KOH, texturing by using KOH and a texturing additive, and finally cleaning by RCA cleaning to form a pyramid textured surface on the surface of the monocrystalline N-type silicon wafer to obtain a textured silicon wafer, wherein the surface reflectivity of the textured silicon wafer of the silicon wafer is 10.5%;
(2) by plasma treatmentChemical vapor deposition is carried out to deposit an intrinsic amorphous silicon layer on the two side surfaces of the textured silicon wafer respectively, and the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2The thickness of the intrinsic amorphous silicon layer on one side is 5 nm; depositing an N-type doped amorphous silicon film layer with the thickness of 5nm on the surface of the intrinsic amorphous silicon layer on one side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing a 5nm thick P-type doped amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the other side by plasma Chemical Vapor Deposition (CVD), wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2；
(3) Respectively depositing an IWO conductive layer on the surfaces of the doped amorphous silicon layers on the two sides by magnetron sputtering or reactive plasma deposition, wherein the distance between an IWO target and a substrate is 6cm, and pumping the vacuum degree of a cavity to 5 × 10 by sequentially using a mechanical pump and a molecular pump in the working process-4Pa, introducing argon, keeping the flow rate at 35mL/min, adjusting the working pressure to 0.5Pa after introducing for 10 minutes, beginning to deposit an IWO conductive layer on the substrate after pre-sputtering for 15 minutes, wherein the deposition time is 5 minutes, taking out after the deposition is finished, the thickness of the conductive layer on one side is 50nm, and the sheet resistance of the conductive layer is 30 omega/□;
(4) the surfaces of the conductive thin film layers on the two sides are respectively covered with silver metal electrodes in a screen printing mode, the silver metal electrodes are divided into main grids and auxiliary grids, the number of the main grids on the surface of one side is 3, the width of the main grids is 100 micrometers, the main grids are parallel to each other, the number of the auxiliary grids is 90, the width of the auxiliary grids is 50 micrometers, the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are perpendicular to each other; the number of the main grids on the other side surface is 2, the width is 100 mu m, all the main grids are parallel to each other, the number of the auxiliary grids is 90, the width is 50 mu m, all the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are vertical to each other; then, the metal electrode is solidified at 175 ℃, and the solidification time is 40 min;
(5) adopt laser cutting to slice whole piece battery, after the section was accomplished, the mode that adopts the liquid nitrogen to spray cooled down the cutting plane of burst battery, after cooling down, carries out concentrated nitric acid to the cutting plane of burst battery and handles, and concentrated nitric acid treatment process includes: immersing the cut surface of the segmented battery into 40 wt% concentrated nitric acid for 20min, wherein the temperature of the concentrated nitric acid is 30 ℃, and taking out the cut surface of the segmented battery to form a passivation layer;
(6) and (3) injecting light into the segmented cells by adopting an LED or a xenon lamp, wherein the light intensity is 40 sunlight intensities, the light injection time is 5s, and the light injection temperature is 250 ℃.
Example 3
The embodiment provides a preparation method of a solar cell, which specifically comprises the following steps:
(1) texturing a monocrystalline N-type silicon wafer with the resistivity of 3 omega cm and the thickness of 120 mu m, roughly polishing by using KOH, texturing by using KOH and a texturing additive, and finally cleaning by RCA cleaning to form a pyramid textured surface on the surface of the silicon wafer to obtain a textured silicon wafer, wherein the surface reflectivity of the textured silicon wafer of the silicon wafer is 11.3%;
(2) depositing an intrinsic amorphous silicon layer on the two side surfaces of the textured silicon wafer by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2The thickness of the intrinsic amorphous silicon layer on one side is 8 nm; depositing an N-type doped amorphous silicon film layer with the thickness of 10nm on the surface of the intrinsic amorphous silicon layer on one side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing a 20nm thick P-type doped amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the other side by adopting plasma chemical vapor deposition2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2；
(3) Respectively depositing an ITiO conductive layer on the surfaces of the doped amorphous silicon layers on the two sides by adopting magnetron sputtering, wherein the distance between an ITiO target and a substrate is 6cm, and in the working process, a mechanical pump and a molecular pump are sequentially used for pumping the vacuum degree of a cavity to 5 multiplied by 10-4Pa, introducing argon gas, and keeping the gas flow at35mL/min, regulating the working pressure to 0.5Pa after 10 minutes of introduction, beginning to deposit an ITiO conducting layer on the substrate after pre-sputtering for 15 minutes, wherein the deposition time is 5 minutes, taking out the ITiO conducting layer after the deposition is finished, the thickness of the conducting layer on one side is 60nm, and the sheet resistance of the conducting layer is 40 omega/□;
(4) the surfaces of the conductive thin film layers on the two sides are respectively covered with silver metal electrodes in a screen printing mode, the silver metal electrodes are divided into main grids and auxiliary grids, the number of the main grids on the surface of one side is 6, the width of the main grids is 80 microns, the main grids are parallel to each other, the number of the auxiliary grids is 100, the width of the auxiliary grids is 40 microns, the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are perpendicular to each other; the number of the main grids on the other side surface is 5, the width is 80 mu m, all the main grids are parallel to each other, the number of the auxiliary grids is 120, the width of the auxiliary grids is 40 mu m, all the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are vertical to each other; then, the silver metal electrode is solidified at 180 ℃, and the solidification time is 35 min;
(5) adopt laser cutting to slice whole piece battery, after the section was accomplished, the mode that adopts the liquid nitrogen to spray cooled down the cutting plane of burst battery, after cooling down, carries out ozone treatment to the cutting plane of burst battery, and ozone treatment process includes: putting the segmented battery into ozone atmosphere, and performing surface passivation treatment for 10s at 10 ℃ to form a passivation layer on the cutting surface of the segmented battery;
(6) and (3) injecting light into the segmented battery by adopting an LED, wherein the light intensity is 40 solar light intensities, the light injection time is 10s, and the light injection temperature is 230 ℃.
Example 4
The embodiment provides a preparation method of a solar cell, which specifically comprises the following steps:
(1) texturing a monocrystalline N-type silicon wafer with the resistivity of 4 omega cm and the thickness of 130 mu m, roughly polishing by using KOH, texturing by using KOH and a texturing additive, and finally cleaning by RCA cleaning to form a pyramid textured surface on the surface of the monocrystalline N-type silicon wafer to obtain a textured silicon wafer, wherein the surface reflectivity of the textured silicon wafer is 12%;
(2) by plasma chemical vapor deposition on a fabricDepositing an intrinsic amorphous silicon layer on the two side surfaces of the structured silicon wafer respectively, wherein the thickness of the intrinsic amorphous silicon layer on one side is 18nm, and the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing an N-type doped amorphous silicon film layer with the thickness of 25nm on the surface of the intrinsic amorphous silicon layer on one side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing a 30nm thick P-type doped amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the other side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2；
(3) Respectively depositing a layer of AZO conductive layer on the surfaces of the doped amorphous silicon layers on the two sides by adopting magnetron sputtering, wherein the distance between an AZO target and a substrate is 6cm, and pumping the vacuum degree of a cavity to 5 multiplied by 10 by using a mechanical pump and a molecular pump in sequence in the working process- 4Pa, introducing argon, keeping the flow rate at 35mL/min, adjusting the working pressure to 0.5Pa after introducing for 10 minutes, beginning to deposit an AZO conductive layer on the substrate after pre-sputtering for 15 minutes, wherein the deposition time is 5 minutes, taking out after the deposition is finished, the thickness of the conductive layer on one side is 80nm, and the sheet resistance of the conductive layer is 50 omega/□;
(4) the surfaces of the conductive thin film layers on the two sides are respectively covered with silver metal electrodes in a screen printing mode, the silver metal electrodes are divided into main grids and auxiliary grids, the number of the main grids on the surface of one side is 8, the width of the main grids is 50 micrometers, the main grids are parallel to each other, the number of the auxiliary grids is 130, the width of the auxiliary grids is 30 micrometers, the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are perpendicular to each other; the number of the main grids on the other side surface is 8, the width of the main grids is 60 mu m, the main grids are parallel to each other, the number of the auxiliary grids is 130, the width of the auxiliary grids is 35 mu m, the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are vertical to each other; then, the silver metal electrode is solidified at 190 ℃, and the solidification time is 20 min;
(5) adopt laser cutting to slice whole piece battery, after the section was accomplished, the mode that adopts the liquid nitrogen to spray cooled down the cutting plane of burst battery, after cooling down, carries out concentrated nitric acid to the cutting plane of burst battery and handles, and concentrated nitric acid treatment process includes: immersing the cut surface of the segmented battery into 45 wt% concentrated nitric acid for 15min, wherein the temperature of the concentrated nitric acid is 35 ℃, and taking out the cut surface of the segmented battery to form a passivation layer;
(6) and (3) injecting light into the segmented battery by adopting an LED, wherein the light intensity is 40 solar light intensities, the light injection time is 15s, and the light injection temperature is 220 ℃.
Example 5
The embodiment provides a preparation method of a solar cell, which specifically comprises the following steps:
(1) texturing a monocrystalline N-type silicon wafer with the resistivity of 6 omega cm and the thickness of 140 microns, roughly polishing by using KOH, texturing by using KOH and a texturing additive, and finally cleaning by RCA cleaning to form a pyramid textured surface on the surface of the silicon wafer to obtain a textured silicon wafer, wherein the surface reflectivity of the textured silicon wafer of the silicon wafer is 13.6%;
(2) depositing an intrinsic amorphous silicon layer on the two side surfaces of the textured silicon wafer by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2The thickness of the intrinsic amorphous silicon layer on one side is 22 nm; depositing an N-type doped amorphous silicon film layer with the thickness of 30nm on the surface of the intrinsic amorphous silicon layer on one side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing a 35nm thick P-type doped amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the other side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2；
(3) Respectively depositing an ITO conductive layer on the surfaces of the amorphous silicon-doped layers on the two sides by adopting magnetron sputtering, wherein the distance between an ITO target and a substrate is 6cm, and in the working process, a mechanical pump and a molecular pump are sequentially used for pumping the vacuum degree of a cavity to 5 multiplied by 10- 4Pa, introducing argon, keeping the gas flow at 35mL/min, and introducingAfter 10 minutes, adjusting the working air pressure to 0.5Pa, beginning to deposit an ITO conductive layer on the substrate after pre-sputtering for 15 minutes, wherein the deposition time is 5 minutes, the ITO conductive layer is taken out after the deposition is finished, the thickness of the conductive layer on one side is 90nm, and the sheet resistance of the conductive layer is 70 omega/□;
(4) the surfaces of the conductive thin film layers on the two sides are respectively covered with silver metal electrodes in a screen printing mode, the silver metal electrodes are divided into main grids and auxiliary grids, the number of the main grids on the surface of one side is 10, the width of the main grids is 30 micrometers, the main grids are parallel to each other, the number of the auxiliary grids is 150, the width of the auxiliary grids is 20 micrometers, the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are perpendicular to each other; the number of the main grids on the other side surface is 10, the width is 40 mu m, all the main grids are parallel to each other, the number of the auxiliary grids is 160, the width of the auxiliary grids is 25 mu m, all the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are vertical to each other; then, the silver metal electrode is solidified at 195 ℃, and the solidification time is 10 min;
(5) adopt laser cutting to slice whole piece battery, after the section was accomplished, the mode that adopts the liquid nitrogen to spray cooled down the cutting plane of burst battery, after cooling down, carries out ozone treatment to the cutting plane of burst battery, and ozone treatment process includes: putting the segmented battery into ozone atmosphere, and performing surface passivation treatment for 1s at 200 ℃ to form a passivation layer on the cutting surface of the segmented battery;
(6) and (3) injecting light into the segmented battery by adopting an LED, wherein the light intensity is 40 solar light intensities, the light injection time is 20s, and the light injection temperature is 180 ℃.
Example 6
The embodiment provides a preparation method of a solar cell, which specifically comprises the following steps:
(1) texturing a monocrystalline N-type silicon wafer with the resistivity of 7 omega cm and the thickness of 160 mu m, roughly polishing by using KOH, texturing by using KOH and a texturing additive, and finally cleaning by RCA cleaning to form a pyramid textured surface on the surface of the silicon wafer to obtain a textured silicon wafer, wherein the surface reflectivity of the textured silicon wafer of the silicon wafer is 14.8%;
(2) adopting plasma chemical vapor deposition to texture silicon chipRespectively depositing an intrinsic amorphous silicon layer with a thickness of 25nm on the surface of the two sides, and processing with H gas2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing an N-type doped amorphous silicon film layer with the thickness of 40nm on the surface of the intrinsic amorphous silicon layer on one side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2(ii) a Depositing a 40nm thick P-type doped amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the other side by adopting plasma chemical vapor deposition, wherein the process gas is H2And SiH4Volume flow ratio of 95:1, power density of 65mW/cm2；
(3) Respectively depositing an IWO conductive layer on the surfaces of the doped amorphous silicon layers on the two sides by magnetron sputtering, wherein the distance between an IWO target and a substrate is 6cm, and pumping the vacuum degree of a cavity to 5 multiplied by 10 by using a mechanical pump and a molecular pump in sequence in the working process- 4Pa, introducing argon, keeping the flow rate at 35mL/min, adjusting the working pressure to 0.5Pa after introducing for 10 minutes, beginning to deposit an IWO conductive layer on the substrate after pre-sputtering for 15 minutes, wherein the deposition time is 6 minutes, taking out after the deposition is finished, the thickness of the conductive layer on one side is 100nm, and the sheet resistance of the conductive layer is 90 omega/□;
(4) the surfaces of the conductive thin film layers on the two sides are respectively covered with silver metal electrodes in a screen printing mode, the silver metal electrodes are divided into main grids and auxiliary grids, the number of the main grids on the surface of one side is 12, the width of the main grids is 10 mu m, the main grids are parallel to each other, the number of the auxiliary grids is 180, the width of the auxiliary grids is 15 mu m, the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are perpendicular to each other; the number of the main grids on the other side surface is 12, the width is 20 mu m, all the main grids are parallel to each other, the number of the auxiliary grids is 180, the width of the auxiliary grids is 15 mu m, all the auxiliary grids are parallel to each other, and the main grids and the auxiliary grids are vertical to each other; then, the silver metal electrode is solidified at 210 ℃, and the solidification time is 5 min;
(5) adopt laser cutting to slice whole piece battery, after the section was accomplished, the mode that adopts the liquid nitrogen to spray cooled down the cutting plane of burst battery, after cooling down, carries out concentrated nitric acid to the cutting plane of burst battery and handles, and concentrated nitric acid treatment process includes: immersing the cut surface of the segmented battery into 50 wt% concentrated nitric acid for 10min, wherein the temperature of the concentrated nitric acid is 30 ℃, and taking out the cut surface of the segmented battery to form a passivation layer;
(6) and (3) injecting light into the segmented battery by adopting an LED, wherein the light intensity is 40 solar light intensities, the light injection time is 25s, and the light injection temperature is 150 ℃.
Example 7
Compared with the embodiment 1, the preparation method provided by the embodiment omits the cooling in the step (5), and directly performs ozone treatment on the sliced cell after cutting.
Other steps and process parameters were exactly the same as in example 1.
Comparative example 1
This comparative example provides a method for manufacturing a solar cell, which, compared to example 1, replaces the order of step (5) and step (6) in the manufacturing method provided in example 1, and performs light injection in step (6) first, followed by slicing in step (5).
Other steps and process parameters were exactly the same as in example 1.
The conversion efficiencies of the solar cells prepared in example 1 and comparative example 1 were measured, and the test results are shown in table 1.
TABLE 1
| Whole cell | Segmented battery | After light injection | |
| Example 1 | 24.03％ | 23.72％ | 24.04％ |
| Example 2 | 24.05％ | 23.86％ | 24.07％ |
| Example 3 | 24.06％ | 23.79％ | 24.06％ |
| Example 4 | 24.02％ | 23.76％ | 24.03％ |
| Example 5 | 24.03％ | 23.74％ | 24.05％ |
| Example 6 | 24.01％ | 23.82％ | 24.03％ |
| Example 7 | 24.03％ | 23.68％ | 23.98％ |
| Whole cell | After light injection | Segmented battery | |
| Comparative example 1 | 24.01％ | 24.31％ | 23.90％ |
As can be seen from the data in table 1, in the preparation method provided in this example, the sequence of light injection and slicing is adjusted, slicing is performed first, and then light injection is performed, and as can be seen from the conversion efficiencies of examples 1 to 7, the conversion efficiency of the sliced battery obtained after slicing is significantly lower than that of the whole battery, which indicates that the conversion efficiency of the battery is reduced due to slicing, but after light injection, the conversion efficiency of the sliced battery is significantly improved, even slightly higher than that of the whole battery before slicing. The comparative example 1 adopts the traditional preparation process, light injection is firstly carried out, then slicing is carried out, and the conversion efficiency provided by the comparative example 1 shows that the conversion efficiency of the whole cell after light injection is obviously improved compared with that before light injection, but the conversion efficiency of the sliced cell obtained after slicing is greatly reduced and is far lower than that of the whole cell before light injection. Thus, the process steps provided by the invention weaken the influence of slicing on the efficiency of the battery.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. A preparation method of a solar cell is characterized by comprising the following steps: texturing, amorphous silicon film deposition, conducting layer deposition and metallization are sequentially carried out on the surface of a silicon wafer to obtain a whole cell, the whole cell is sliced to obtain a segmented cell, and light injection is carried out on the segmented cell to obtain the solar cell.
2. The method according to claim 1, wherein the solar cell is a heterojunction solar cell;
preferably, the silicon wafer is of single crystal N type;
preferably, the resistivity of the silicon wafer is 1-7 omega cm;
preferably, the thickness of the silicon wafer is 100-160 μm.
3. The preparation method according to claim 1 or 2, wherein after the silicon wafer is subjected to texturing, a pyramid textured surface is formed on the surface of the silicon wafer to obtain a textured silicon wafer;
preferably, the surface reflectivity of the textured silicon wafer is 10-15%.
4. A method according to any one of claims 1 to 3, wherein the amorphous silicon thin film comprises an intrinsic amorphous silicon layer and a doped amorphous silicon layer, and the amorphous silicon thin film deposition process comprises: depositing an intrinsic amorphous silicon layer on the surfaces of two sides of the textured silicon wafer respectively, and depositing a doped amorphous silicon layer on the surfaces of the intrinsic amorphous silicon layers on the two sides respectively;
preferably, the intrinsic amorphous silicon layer is deposited by plasma chemical vapor deposition;
preferably, the thickness of the intrinsic amorphous silicon layer on one side is 5-25 nm;
preferably, the doped amorphous silicon layer is deposited by plasma chemical vapor deposition;
preferably, the thickness of the single-side doped amorphous silicon layer is 5-40 nm;
preferably, an N-type doped amorphous silicon film layer is deposited on the surface of the intrinsic amorphous silicon layer on one side, and a P-type doped amorphous silicon film layer is deposited on the surface of the intrinsic amorphous silicon layer on the other side.
5. The method according to any one of claims 1 to 4, wherein the conductive layer deposition process comprises: respectively depositing a conductive layer on the surfaces of the doped amorphous silicon layers on the two sides;
preferably, the deposition mode of the conducting layer is magnetron sputtering or reactive plasma deposition;
preferably, the material of the conductive layer comprises any one or a combination of at least two of ITO, IWO, ITiO or AZO;
preferably, the thickness of the conducting layer is 50-110 nm;
preferably, the sheet resistance of the conducting layer is 30-90 omega/□.
6. The method of any one of claims 1-5, wherein the metallization process comprises: covering metal electrodes on the surfaces of the conductive thin film layers on the two sides respectively, and curing the metal electrodes;
preferably, the covering mode is any one of screen printing, laser transfer printing or electroplating;
preferably, the metal electrode is divided into a main grid and an auxiliary grid, and the main grid and the auxiliary grid are perpendicular to each other;
preferably, the number of the main grids is 0-12, and the main grids are parallel to each other;
preferably, the width of the main gate is 0-100 μm;
preferably, the number of the auxiliary grids is 90-180, and the auxiliary grids are parallel to each other;
preferably, the width of the auxiliary grid is 15-50 μm;
preferably, the curing temperature is 175-210 ℃;
preferably, the curing time is 5-40 min.
7. The production method according to any one of claims 1 to 6, wherein the whole cell is diced by laser cutting;
preferably, after slicing is completed, cooling the cutting surface of the sliced battery;
preferably, the temperature reduction treatment adopts liquid nitrogen spraying;
preferably, after the temperature reduction and cooling are finished, carrying out surface passivation treatment on the cutting surface of the segmented battery;
preferably, the surface passivation treatment adopts ozone treatment or concentrated nitric acid treatment.
8. The method of claim 7, wherein the ozone treatment process comprises: putting the segmented battery into an ozone atmosphere, and performing surface passivation at 10-200 ℃ to form a passivation layer on a cutting surface of the segmented battery;
preferably, the time of ozone treatment is 1-10 s;
preferably, the concentrated nitric acid treatment process comprises: immersing the cut surfaces of the segmented batteries into concentrated nitric acid for 10-20 min, and taking out the cut surfaces of the segmented batteries to form a passivation layer;
preferably, the concentration of the concentrated nitric acid is 40-50 wt%;
preferably, the temperature of the concentrated nitric acid is 30-40 ℃.
9. The method according to any one of claims 1 to 8, wherein the light source used in the light injection process is an LED or xenon lamp;
preferably, the light injection time is 5-30 s;
preferably, the temperature of light injection is 150-250 ℃.
10. A solar cell produced by the production method according to any one of claims 1 to 9.
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