CN201562684U - Silica-based thin-film solar battery - Google Patents
Silica-based thin-film solar battery Download PDFInfo
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- CN201562684U CN201562684U CN2009202207557U CN200920220755U CN201562684U CN 201562684 U CN201562684 U CN 201562684U CN 2009202207557 U CN2009202207557 U CN 2009202207557U CN 200920220755 U CN200920220755 U CN 200920220755U CN 201562684 U CN201562684 U CN 201562684U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The utility model discloses a silica-based thin-film solar battery, which comprises a glass substrate, a transparent conducting front electrode, a back electrode and a protective backing plate. A boron-doped amorphous silicon p layer, an intrinsic i layer and a phosphorus-doped amorphous silicon n layer are sequentially arranged between the transparent conducting front electrode and the back electrode, and a silica-based thin-film buffer layer is arranged between the intrinsic i layer and the amorphous silicon n layer. The silica-based thin-film solar battery can further improve the photoelectric conversion efficiency of the large-area p-i-n type thin-film solar battery.
Description
Technical field
The utility model relates to the photovoltaic solar cell technical field, particularly a kind of silicon-based film solar cells.
Background technology
In recent years, along with the worsening shortages of the energy, the development and utilization of renewable green energy resource more and more causes people's attention, particularly to the development and utilization of solar energy.Solar cell as the solar energy converting media, particularly based on amorphous silicon hydride (a-Si:H) and nanocrystal silicon (nano-crystalline Si, nc-Si) thin-film solar cells is with its large tracts of land, low cost, the favor that advantage is subjected to common people such as be easy to lay.Amorphous silicon thin-film solar cell few with the silicon amount, easier reducing cost, under the situation of silicon material constant tension, thin-film solar cells has become the new trend and the new focus of solar cell development.
The known semiconductor thin-film solar cells is usually designed to the photoelectric conversion unit with p-i-n type structure, Fig. 1 is the typical structure schematic diagram of silicon-based film solar cells, as shown in Figure 1, thin-film solar cells generally includes glass substrate 10, the preceding electrode 11 of the electrically conducting transparent (common tin oxide (SnO that is mixed by fluorine
2: F) form), back electrode 15 (zinc oxide (ZnO:Al) that is mixed by aluminium is formed usually) and baffle 16, the photoelectric conversion unit of before electrically conducting transparent, forming by p layer 12, intrinsic i layer 13 and n layer 14 between electrode 11 and the back electrode 15.Wherein normally boron doped broad-band gap amorphous silicon alloy of the material of p layer 12 or nanocrystal silicon; The intrinsic i layer 13 of non-doping generally is by amorphous silicon, and nanocrystal silicon or amorphous germanium silicon alloy are formed; N layer 14 normally is made up of the amorphous silicon or the nanocrystal silicon of phosphorus doping.Set up internal electric field in p layer 12 and the n layer 14 i layer 13 in photoelectric conversion unit, when light 19 passes p layer 12 and enters intrinsic i layer 13, produce electron-hole pair therein, under the effect of internal electric field, electronics-hole is separated, and electron stream is to n layer 14, and the hole flows to p layer 12, form photogenerated current and also produce photovoltage, photo-generated carrier by electrically conducting transparent before electrode 11 and back electrode 15 collect.
For silicon-based film solar cells, well behaved key is to avoid the compound of charge carrier (electronics and hole) as far as possible, thereby charge carrier can effectively be absorbed by external circuit.The interface of doped layer and intrinsic layer all has higher electronic defects usually, and it is compound to cause electronics and hole ratio to be easier at the interface, thereby reduces photogenerated current and reduce the power output of solar cell.In addition, at the i/n interface (in the zone that i layer 13 and n layer 14 join), the band gap of n layer 14 is slightly littler than i layer 13 usually, and reason is because n layer 14 has heavier phosphorus doping, makes the band gap step-down.This situation cause in i layer 13 hole that produces can be relatively easy to diffuse into n layer 14 and and electron recombination, thereby reduce the absorption of solar cell to photic charge carrier.Comprise that simultaneously the circuit defect that pin hole causes also is a very serious problem for the photoelectric conversion efficiency of large tracts of land photovoltaic device.
The utility model content
Therefore, the purpose of this utility model is to provide a kind of silicon-based film solar cells, can further improve the photoelectric conversion efficiency of p-i-n type thin-film solar cells, the bulk silicon based thin film solar cell in particularly helping to produce in enormous quantities improves photoelectric conversion efficiency and yield.
For achieving the above object; the utility model provides a kind of silicon-based film solar cells; comprise glass substrate, the preceding electrode of electrically conducting transparent, back electrode and protection backboard; the n layer that comprises boron doped p layer, intrinsic i layer and phosphorus doping before described electrically conducting transparent between electrode and the back electrode successively has the silica-base film resilient coating between described intrinsic i layer and the described n layer.
Optionally, also has the silica-base film resilient coating between described p layer and the intrinsic i layer.
Optionally, described silica-base film resilient coating comprises any one or the combination in amorphous silicon, non-crystal silicon carbon, amorphous silicon nitrogen, amorphous silica, amorphous fluosilicic or other amorphous silicon alloys, microcrystal silicon or the nanocrystal silicon alloy.
Optionally, the band gap of described silica-base film resilient coating comprises the scope of 1.75～1.9eV.
Optionally, the band gap of described silica-base film resilient coating can change arbitrarily along with the variation of the thickness of this layer.
The utility model also provides a kind of silicon-based film solar cells; comprise glass substrate, the preceding electrode of electrically conducting transparent, back electrode and protection backboard; comprise the battery unit that at least one knot is made up of the n layer of boron doped p layer, intrinsic i layer and phosphorus doping before described electrically conducting transparent between electrode and the back electrode, the i/n in any junction battery unit has the silica-base film resilient coating at the interface.
Optionally, i/n interface and the p/i in any junction battery unit has the silica-base film resilient coating at the interface.
Optionally, described silica-base film resilient coating comprises any one or the combination in amorphous silicon, non-crystal silicon carbon, amorphous silicon nitrogen, amorphous silica, amorphous fluosilicic or other amorphous silicon alloys, microcrystal silicon or the nanocrystal silicon alloy.
Optionally, the band gap of described silica-base film resilient coating comprises the scope of 1.75～1.9eV.
Optionally, the band gap of described silica-base film resilient coating can change arbitrarily along with the variation of the thickness of this layer.
Compared with prior art, the technical solution of the utility model has the following advantages:
Silicon-based film solar cells of the present utility model has increased between the i layer of p-i-n type structure and n layer and has had wide bandgap layer silica-base film resilient coating, has reduced the compound of i/n contact-making surface charge carrier effectively, has increased photoelectric current.Owing to added this resilient coating, the performance of thin-film solar cells has obtained improvement, it can kept than higher photoelectric conversion efficiency in the running for a long time, and the conversion efficiency that is to say battery after initial conversion efficiency and the illumination all can improve owing to the existence of the silicon thin film resilient coating at i/n interface.In addition, the amorphous silicon resilient coating can make device have higher series resistance, the decline of the photoelectric conversion efficiency that causes for the short circuit phenomenon of silica-based (amorphous silicon, microcrystal silicon, nanocrystal silicon and various silicon-base alloy) thin-film solar cells has the obvious suppression effect, thus the decline of bulk silicon based thin film solar cell yield in large-scale production that reduces effectively that short circuit phenomenon causes.
Silicon-based film solar cells of the present utility model can also all be provided with the silica-base film resilient coating with wide bandgap layer between i layer and n layer and p layer and i layer, further reduce the charge carrier recombination rate of p/i contact-making surface, thereby further improved the initial photoelectric conversion efficiency of silicon-based film solar cells.
Description of drawings
By the more specifically explanation of the preferred embodiment of the present utility model shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present utility model will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present utility model.In the accompanying drawings, for clarity sake, amplified the thickness of layer.
Fig. 1 is the typical structure schematic diagram of thin-film solar cells;
Fig. 2 is the structural representation of the utility model thin-film solar cells first embodiment;
Fig. 3 is the structural representation of the utility model thin-film solar cells second embodiment;
Fig. 4 is the structural representation of the utility model thin-film solar cells the 3rd embodiment.
Described diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection range of the present utility model at this.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the utility model.But the utility model can be implemented much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of the utility model intension.Therefore the utility model is not subjected to the restriction of following public concrete enforcement.
Fig. 2 is the structural representation of the utility model thin-film solar cells first embodiment.As shown in Figure 2, back electrode 250 and the protection backboard 260 that comprises electrode 210 before glass substrate 200, the tin oxide transparent conductive, forms by zinc oxide and metallic film (for example aluminium) according to the thin-film solar cells of the utility model first embodiment.Electrode 210 surfaces are matte before the electrically conducting transparent, are fit to disperse light, thereby strengthen right light absorpting ability.The surface of electrode 210 has the intrinsic amorphous silicon of boron doped broad-band gap amorphous silicon alloy p layer 220, non-doping or the amorphous silicon alloy n layer 240 of nanocrystal silicon i layer 230 and phosphorus doping before electrically conducting transparent.
In the present embodiment, has the silica-base film resilient coating 231 of broad-band gap between i layer 230 and the n layer 240.Described silica-base film resilient coating 231 comprises any one or the combination in amorphous silicon, non-crystal silicon carbon, amorphous silicon nitrogen, amorphous silica, amorphous fluosilicic or other amorphous silicon alloys, microcrystal silicon or the nanocrystal silicon alloy, its band gap comprises the scope of 1.75～1.9eV (electronvolt), is preferably the amorphous silicon oxygen alloy of oxygen content between atomic percent 2～12%.The band gap of silica-base film resilient coating 231 can change arbitrarily along with the variation of the thickness of this layer, it can be that the band gap of whole layer is all between 1.75～1.9eV, the band gap that also can be at least one sublayer in this layer carries out the transition to the resilient coating of broad-band gap gradually from low band gaps between 1.75～1.9eV.By increasing the band gap that the concentration that adds hydrogen can realize progressively improving the sublayer of this phase deposition in a certain stage in the deposition process.Band gap has good stable at the amorphous silicon oxygen alloy of 1.75～1.9eV as i/n interface resilient coating.Owing to add this resilient coating 231, reduced the compound of electronics and hole effectively, make the long-time stability of thin-film solar cells to comprise that the photoelectric conversion efficiency after initial photoelectric conversion efficiency and the illumination all improves.In addition, broad-band gap resilient coating 231 has improved the series resistance of thin-film solar cells p-i-n laminated construction, can reduce the short circuit phenomenon of device.
In other embodiment of the present utility model, silica-base film resilient coating 231 can be the amorphous silicon fluorine alloy of broad-band gap, and the band gap of this alloy can take place along with the content of fluorine and can successionally change.
Fig. 3 is the structural representation of the utility model thin-film solar cells second embodiment.As shown in Figure 3, back electrode 350 and the protection backboard 360 that comprises electrode 310 before glass substrate 300, the tin oxide transparent conductive, forms by zinc oxide and metallic film (for example aluminium) according to the thin-film solar cells of the utility model second embodiment.Electrode 310 surfaces are matte before the electrically conducting transparent, are fit to disperse light, thereby strengthen right light absorpting ability.The surface of electrode 310 has the intrinsic amorphous silicon of boron doped amorphous silicon alloy p layer 320, non-doping or the amorphous silicon alloy n layer 340 of nanocrystal silicon i layer 330 and phosphorus doping before electrically conducting transparent.In the present embodiment, broad-band gap silica-base film resilient coating is arranged between p layer and the i layer simultaneously, and between i layer and the n layer, comprises the resilient coating 331 between p layer 320 and the i layer 330, and the resilient coating 332 between i layer 330 and the n layer 340. Resilient coating 331 and 332 material are any one or the combination in amorphous silicon, non-crystal silicon carbon, amorphous silicon nitrogen, amorphous silica, amorphous fluosilicic or other amorphous silicon alloys, microcrystal silicon or the nanocrystal silicon alloy, and for example resilient coating 331 and 332 is broad-band gap (1.75～1.9eV) non-crystal silicon carbon or an amorphous silicon nitrogen alloy. Resilient coating 331 and 332 can be that the band gap of whole layer is broad-band gap, also can be that band gap is constantly widened, the band gap that is to say resilient coating has a sublayer at least at 1.75～1.9eV, that is to say that the band gap of silica-base film resilient coating 331 and 332 can change arbitrarily along with the variation of the thickness of this layer.In the present embodiment, silica-base film resilient coating 331 and 332 is preferably amorphous silicon oxygen alloy or the amorphous silicon fluorine alloy of oxygen content between atomic percent 2～12%.The thin-film solar cells that the thin-film solar cells of present embodiment more only has the i/n resilient coating has higher photoelectric conversion efficiency.
Fig. 4 is the structural representation of the utility model thin-film solar cells the 3rd embodiment.As shown in Figure 4, present embodiment is the binode thin-film solar cells, the back electrode 480 that comprises electrode 410 before the glass substrate 400, tin oxide transparent conductive, forms by zinc oxide and metallic film, and protect backboard 490.First junction battery of between preceding electrode 410 and back electrode 480, forming and second junction battery of forming by p layer 450, i layer 460, n layer 470 by p layer 420, i layer 430, n layer 440.Between the p of second junction battery layer 450 and i layer 460, have silica-base film resilient coating 461, have silica-base film resilient coating 462 between i layer 460 and the n layer 470.Described silica-base film resilient coating 461 and 462 is any one or the combination in amorphous silicon, non-crystal silicon carbon, amorphous silicon nitrogen, amorphous silica, amorphous fluosilicic or other amorphous silicon alloys, microcrystal silicon or the nanocrystal silicon alloy, and its band gap comprises the scope of 1.75～1.9eV.
In the present embodiment, the battery structure that aforementioned p/i interface and i/n interface is all had broad-band gap silica-base film resilient coating is positioned over second knot.In the embodiment of other multijunction solar cells, the i/n interface in any junction battery unit, or the i/n interface of any junction battery unit and p/i have the silica-base film resilient coating at the interface.Be positioned over the silica-base film resilient coating of second knot and/or end knot, because the light major part is absorbed by the top junction battery, the luminous intensity that arrives second knot and end knot is lower, and is much lower than the resilient coating stability requirement in the single junction cell to the requirement of the stability of silica-base film resilient coating.
The above only is preferred embodiment of the present utility model, is not the utility model is done any pro forma restriction.For example, although each in the accompanying drawings layer all be smooth and thickness almost equal, this only is that principle of the present utility model is described for convenience and clearly.Any those of ordinary skill in the art, do not breaking away under the technical solutions of the utility model scope situation, all can utilize the technology contents of above-mentioned announcement that technical solutions of the utility model are made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solutions of the utility model, all still belongs in the protection range of technical solutions of the utility model any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present utility model.
Claims (8)
1. silicon-based film solar cells; comprise glass substrate, the preceding electrode of electrically conducting transparent, back electrode and protection backboard; before described electrically conducting transparent, comprise the n layer of boron doped p layer, intrinsic i layer and phosphorus doping between electrode and the back electrode successively, it is characterized in that: have the silica-base film resilient coating between described intrinsic i layer and the described n layer.
2. silicon-based film solar cells as claimed in claim 1 is characterized in that: also have the silica-base film resilient coating between described p layer and the intrinsic i layer.
3. silicon-based film solar cells as claimed in claim 1 or 2 is characterized in that: described silica-base film resilient coating comprises any one or the combination in amorphous silicon, non-crystal silicon carbon, amorphous silicon nitrogen, amorphous silica, amorphous fluosilicic or amorphous silicon alloy, microcrystal silicon or the nanocrystal silicon alloy.
4. silicon-based film solar cells as claimed in claim 3 is characterized in that: the band gap of described silica-base film resilient coating comprises the scope of 1.75～1.9eV.
5. silicon-based film solar cells; comprise glass substrate, the preceding electrode of electrically conducting transparent, back electrode and protection backboard; comprise the battery unit that at least one knot is made up of the n layer of boron doped p layer, intrinsic i layer and phosphorus doping between electrode and the back electrode before described electrically conducting transparent, it is characterized in that: the i/n in any junction battery unit has the silica-base film resilient coating at the interface.
6. silicon-based film solar cells as claimed in claim 5 is characterized in that: i/n interface and p/i in any junction battery unit have the silica-base film resilient coating at the interface.
7. as claim 5 or 6 described silicon-based film solar cells, it is characterized in that: described silica-base film resilient coating comprises any one or the combination in amorphous silicon, non-crystal silicon carbon, amorphous silicon nitrogen, amorphous silica, amorphous fluosilicic or amorphous silicon alloy, microcrystal silicon or the nanocrystal silicon alloy.
8. silicon-based film solar cells as claimed in claim 7 is characterized in that: the band gap of described silica-base film resilient coating comprises the scope of 1.75～1.9eV.
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| CN2009202207557U CN201562684U (en) | 2009-11-03 | 2009-11-03 | Silica-based thin-film solar battery |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103077982A (en) * | 2011-10-26 | 2013-05-01 | 上海空间电源研究所 | Amorphous silicon germanium thin-film solar battery |
| CN103098233A (en) * | 2010-10-11 | 2013-05-08 | Lg伊诺特有限公司 | Solar cell and method for manufacturing same |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN104332512A (en) * | 2014-07-07 | 2015-02-04 | 河南科技大学 | Microcrystalline silicon thin film solar cell and preparing method thereof |
| CN104576801A (en) * | 2014-11-27 | 2015-04-29 | 湖南共创光伏科技有限公司 | Crystalline silicon and silicon film composite type unijunction PIN solar cell with transition layers and preparation method for crystalline silicon and silicon film composite type unijunction PIN solar cell |
| CN108155562A (en) * | 2016-12-05 | 2018-06-12 | 上海新微科技服务有限公司 | A kind of preparation method of aluminium, phosphor codoping silicon nanocrystal |
| CN115548169A (en) * | 2022-10-26 | 2022-12-30 | 莆田市威特电子有限公司 | Amorphous silicon solar cell with zinc gallium oxide as transparent electrode and preparation method thereof |
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2009
- 2009-11-03 CN CN2009202207557U patent/CN201562684U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103098233A (en) * | 2010-10-11 | 2013-05-08 | Lg伊诺特有限公司 | Solar cell and method for manufacturing same |
| EP2506313A4 (en) * | 2010-10-11 | 2017-08-09 | LG Innotek Co., Ltd. | Solar cell and method for manufacturing same |
| CN103077982A (en) * | 2011-10-26 | 2013-05-01 | 上海空间电源研究所 | Amorphous silicon germanium thin-film solar battery |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN104332512A (en) * | 2014-07-07 | 2015-02-04 | 河南科技大学 | Microcrystalline silicon thin film solar cell and preparing method thereof |
| CN104332512B (en) * | 2014-07-07 | 2016-09-28 | 河南科技大学 | A kind of microcrystalline silicon film solaode and preparation method thereof |
| CN104576801A (en) * | 2014-11-27 | 2015-04-29 | 湖南共创光伏科技有限公司 | Crystalline silicon and silicon film composite type unijunction PIN solar cell with transition layers and preparation method for crystalline silicon and silicon film composite type unijunction PIN solar cell |
| CN108155562A (en) * | 2016-12-05 | 2018-06-12 | 上海新微科技服务有限公司 | A kind of preparation method of aluminium, phosphor codoping silicon nanocrystal |
| CN108155562B (en) * | 2016-12-05 | 2019-12-10 | 上海新微科技服务有限公司 | Preparation method of aluminum and phosphorus co-doped silicon nanocrystal |
| CN115548169A (en) * | 2022-10-26 | 2022-12-30 | 莆田市威特电子有限公司 | Amorphous silicon solar cell with zinc gallium oxide as transparent electrode and preparation method thereof |
| CN115548169B (en) * | 2022-10-26 | 2023-05-16 | 莆田市威特电子有限公司 | Amorphous silicon solar cell with zinc gallium oxide as transparent electrode and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
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Owner name: BEIJING JINGCHENG APOLLO OPTOELECTRONICS EQUIPMENT |
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Effective date of registration: 20110727 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Co-patentee after: Beijing Jingcheng Boyang Optoelectronic Equipment Co.,Ltd. Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: 362000 Jiangnan hi tech Zone, No. 1303 South Ring Road, Licheng District, Quanzhou, Fujian Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
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