CN201440421U - Stacked film structure and film photovoltaic device comprising same - Google Patents
Stacked film structure and film photovoltaic device comprising same Download PDFInfo
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- CN201440421U CN201440421U CN 200920144437 CN200920144437U CN201440421U CN 201440421 U CN201440421 U CN 201440421U CN 200920144437 CN200920144437 CN 200920144437 CN 200920144437 U CN200920144437 U CN 200920144437U CN 201440421 U CN201440421 U CN 201440421U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a stacked film structure and a film photovoltaic device comprising same. The film photovoltaic device comprises a glass substrate, a transparent conductive front electrode, a back electrode and a protective back board, wherein a stacked p layer, a light absorption active layer i and a light absorption active layer n are arranged between the transparent conductive front electrode and the back electrode. The stacked p layer comprises a first film layer and a second film layer, the first film layer is connected with the transparent conductive front electrode, and the second film layer is connected with the i layer. The first film layer has high conductivity and the second film layer has high band gap and low defect density. Each film layer of the stacked p layer is suitable for requirements with different characteristics, so the performance of the p layer can be optimized as a whole.
Description
Technical field
The utility model relates to the photovoltaic device technical field, particularly a kind of laminate film structure and the film photovoltaic device that comprises this structure.
Background technology
In recent years, along with the worsening shortages of the energy, the development and utilization of renewable green energy resource more and more causes people's attention, particularly to the development and utilization of solar energy.Photovoltaic (photovoltaic) device as the solar energy converting media, particularly based on amorphous silicon hydride (a-Si:H) and nanocrystal silicon (nano-crystalline Si, nc-Si) film photovoltaic device is with its large tracts of land, low cost, the favor that advantage is subjected to common people such as be easy to lay.Amorphous silicon film photovoltaic device few with the silicon amount, easier reducing cost, under the situation of silicon material constant tension, film photovoltaic device has become the new trend and the new focus of solar cell development.
Known film photovoltaic device is usually designed to the photoelectric conversion unit with p-i-n type structure, Fig. 1 is the typical structure schematic diagram of film photovoltaic device, as shown in Figure 1, film photovoltaic device generally includes glass substrate 10, the preceding electrode 11 of the electrically conducting transparent (common tin oxide (SnO that is mixed by fluorine
2: F) form), transparent back electrode 15 (zinc oxide (ZnO:A1) that is mixed by aluminium is formed usually) and baffle 16, the photoelectric conversion unit of before electrically conducting transparent, forming by p layer 12, intrinsic i layer 13 and n layer 14 between electrode 11 and the transparent back electrode 15.The normally boron doped broad-band gap amorphous silicon alloy of the material of p layer 12 wherein is as non-crystal silicon carbon and nanocrystal silicon; The intrinsic i layer 13 of non-doping generally is by amorphous silicon, and nanocrystal silicon or amorphous germanium silicon alloy are formed; N layer 14 normally is made up of the amorphous silicon or the nanocrystal silicon of phosphorus doping.P layer 12 and n layer 14 are set up internal electric field in photoelectric conversion unit, when light 19 passes p layer 12 and enters intrinsic i layer 13, produce electron-hole pair therein, under the effect of internal electric field, electronics-hole is separated, and electron stream is to n layer 14, and the hole flows to p layer 12, form photogenerated current and photovoltage, collect by electrode before the electrically conducting transparent 11 and back electrode 15.
For above-mentioned p-i-n type film photovoltaic device, in order to reach higher photoelectric conversion efficiency, p layer 12 need possess following characteristic: at first, the interface before itself and the electrically conducting transparent between the electrode 11 need possess lower contact resistance; Next is to possess high conductance and transparency and wide band gap, makes to form a discontinuous band gap interface between itself and the intrinsic i layer, and this interface has determined the open circuit voltage of film photovoltaic device to a great extent.But the p layer of existing p-i-n type film photovoltaic device is the homogenous material p layer in a processing step, same process condition deposit, can not satisfy above-mentioned many requirements simultaneously well, is difficult to further optimize the performance of amorphous silicon film photovoltaic device.
The utility model content
Therefore, the purpose of this utility model is a kind of laminate film structure is provided and the film photovoltaic device that comprises this structure.
On the one hand, a kind of laminate film structure that the utility model provides, before the electrically conducting transparent of film photovoltaic device between electrode and the photoelectric conversion layer, comprise first rete and second rete, electrode joins before described first rete and the described electrically conducting transparent, and described second rete and described photoelectric conversion layer join.
Optionally, the thickness of described first rete is 1～10 nanometer.
Optionally, the thickness of described second rete is 5～20 nanometers.
On the other hand; a kind of film photovoltaic device that the utility model provides; comprise glass substrate, the preceding electrode of electrically conducting transparent, back electrode and protection backboard; before described electrically conducting transparent, have laminated construction p layer, light absorption active layer i layer and n layer between electrode and the back electrode; described laminated construction p layer comprises first rete and second rete; electrode joins before described first rete and the electrically conducting transparent, and described second rete and described i layer join.
Described first rete has high conductivity, and described second rete has high band gap and fabricating low-defect-density.
Compared with prior art, the technical solution of the utility model has the following advantages:
The utility model is before TCO between electrode and the i layer, and a plurality of retes (more than two-layer) are superimposed forms the p layer of laminated construction, and each rete is suitable for the demand of different qualities, and a plurality of retes are superimposed the p layer is optimized as an overall performance.In the laminated construction p layer of the present utility model, the rete that contacts with electrode before the TCO has higher conductance, makes the preceding electrode of p layer and TCO reach higher conductive characteristic, reduces contact resistance, has the Fermi level that more approaches valence band edge; Have higher transparency and optical band gap with the contacted rete of i layer, and have lower defective, make the p/i interface zone have lower electron mobility and low recombination rate.The p layer of laminated construction of the present utility model is applied to obtain higher open circuit voltage and the short circuit current of Geng Gao in the film photovoltaic device, makes photovoltaic device have higher photoelectric conversion efficiency.
Description of drawings
By the more specifically explanation of the preferred embodiment of the present utility model shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present utility model will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present utility model.In the accompanying drawings, for clarity sake, amplified the thickness of layer.
Fig. 1 is the typical structure schematic diagram of film photovoltaic device;
Fig. 2 is the structural representation of the utility model laminate film structure first embodiment;
Fig. 3 is the structural representation of the utility model film photovoltaic device first embodiment;
Fig. 4 is the structural representation of the utility model laminate film structure second embodiment;
Fig. 5 is the structural representation of the utility model film photovoltaic device second embodiment.
Described diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection range of the present utility model at this.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the utility model.But the utility model can be implemented much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of the utility model intension.Therefore the utility model is not subjected to the restriction of following public concrete enforcement.
The amorphous silicon of hereinafter mentioning, amorphous silicon germanium, nanocrystal silicon and amorphous germanium all are meant the hydride material of these materials, i.e. amorphous silicon hydride, hydrogenated amorphous SiGe, hydrogenation nanocrystal silicon and hydrogenated amorphous germanium material.
Fig. 2 is the structural representation of the utility model laminate film structure first embodiment.As shown in Figure 2, according to the laminated construction p layer 200 of the utility model first embodiment comprise with electrically conducting transparent before the rete 210 that joins of electrode and the rete 220 that joins with the opto-electronic conversion active layer.Wherein, the material of rete 210 is the amorphous silicon or the nanocrystal silicon of carbon dope, and thickness is 1～10 nanometer.And, except carbon mixes, also having the doping of heavier boron, aluminium or gallium in the rete 210, doping content is 1 * 10
20～5 * 10
21/ cm
3, this makes rete 210 itself have higher conductance.The material of rete 220 is the broad-band gap amorphous silicon or the nanocrystal silicon of oxygen-doped or nitrogen, and doping content is 2 * 10
20～1 * 10
22/ cm
3The thickness of rete 220 is 50～20 nanometers, and has the doping of lighter carbon, boron, aluminium or gallium, and doping content is less than 5 * 10
20/ cm
3, or basic non-impurity-doped.This makes rete 220 have wide luminous energy band gap and lower defect concentration.Laminated construction p layer 200 has been realized on the whole: by rete 210 that obtain with electrically conducting transparent before the low contact resistance of electrode, that is high conductivity, and the high grade of transparency that obtains by rete 220, broad-band gap and and the opto-electronic conversion active layer between low defect interface, promoted the performance of p layer on the whole.
Fig. 3 is the structural representation of the utility model film photovoltaic device first embodiment.As shown in Figure 3, the film photovoltaic device according to the utility model first embodiment comprise glass substrate 100, by fluorine-doped tin oxide (SnO
2: F) electrode 110 before the electrically conducting transparent of Zu Chenging, the back electrode 150 formed by zinc oxide (ZnO) and metallic film and protect backboard 160.Electrode 110 surfaces are matte before the electrically conducting transparent, are fit to disperse light, thereby strengthen the light absorpting ability of photoelectric conversion unit.The surface of electrode 110 has laminated construction p layer 200, light absorption active layer i layer 130 and n layer 140 before electrically conducting transparent.The laminated construction p layer 200 that comprises rete 210 and rete 220 promptly can be by the high conductivity between the electrode 110 before rete 210 realizations and the electrically conducting transparent, again can by rete 220 realize higher clarity and and i layer 130 between form the interface of fabricating low-defect-density and high band gap gradient, make the p/i interface zone have lower electron mobility and recombination rate, and then improved the photoelectric conversion efficiency of film photovoltaic device.
Fig. 4 is the structural representation of the utility model laminate film structure second embodiment.As shown in Figure 4, according to the laminated construction p layer 300 of the utility model second embodiment comprise with electrically conducting transparent before the rete 310 that joins of electrode and the rete 320 that joins with the opto-electronic conversion active layer.Wherein, the material of rete 310 is the amorphous silicon or the nanocrystal silicon of carbon dope, and thickness is 1～10 nanometer.And, having the doping of higher boron, aluminium or gallium in the rete 310, doping content is 1 * 10
20～5 * 10
21/ cm
3, this makes rete 310 itself have higher conductance.The material of rete 320 is the amorphous silicon or the nanocrystal silicon of carbon dope, and thickness is 5～20 nanometers.Rete 320 has higher carbon and mixes, and doping content is 2 * 10
20～1 * 10
22/ cm
3And the doping of lighter boron, aluminium or gallium, doping content is less than 5 * 10
20/ cm
3This makes rete 320 have the luminous energy band gap of broad and lower defect concentration.Laminated construction p layer 300 obtains contact resistance with the preceding electrode of electrically conducting transparent by rete 310, that is high conductivity, and obtain by rete 320 high grade of transparency, broad-band gap and and the opto-electronic conversion active layer between low defect interface, thereby promoted the performance of p layer on the whole.
Fig. 5 is the structural representation of the utility model film photovoltaic device second embodiment.As shown in Figure 5, the film photovoltaic device according to the utility model second embodiment comprise glass substrate 100, by fluorine-doped tin oxide (SnO
2: F) electrode 110 before the electrically conducting transparent of Zu Chenging, the back electrode 150 formed by zinc oxide (ZnO) and metallic film and protect backboard 160.Electrode 110 surfaces are matte before the electrically conducting transparent, are fit to disperse light, thereby strengthen the light absorpting ability of photoelectric conversion unit.The surface of electrode 110 has by laminated construction p layer 300, light absorption active layer i layer 130 and n layer 140 before electrically conducting transparent.The laminated construction p layer 300 that comprises rete 310 and rete 320 promptly can be by the high conductivity between the electrode 110 before rete 310 realizations and the electrically conducting transparent, again can by rete 320 realize higher clarity and and i layer 130 between form the interface of fabricating low-defect-density and high band gap gradient, make the p/i interface zone have lower electron mobility and recombination rate, and then improved the photoelectric conversion efficiency of film photovoltaic device.
The manufacture method of laminated construction p layer of the present utility model, as an embodiment, at first electrode surface utilizes plasma-reinforced chemical vapor deposition (PECVD) process deposits to have the rete of high conductivity before electrically conducting transparent, in reative cell, feed silane and diborane, and the atomic concentration of boron is between 0.1～1%, in reative cell, introduce simultaneously carbon dioxide, hydrogen and argon gas, its ratio is 1: 1: 2, air pressure is maintained 1.5～3mbar, and apply the radio-frequency electrical energy that power density is 50～200mW/cm2.Then, continue to utilize pecvd process at the rete that described film surface deposition has wide luminous energy band gap, feed silane, carbon dioxide and diborane in reative cell, wherein the concentration of carbon dioxide and diborane is less than last deposition step.In reative cell, introduce simultaneously nitrous oxide (N
2O), hydrogen and helium, its ratio is 2: 1: 4, and air pressure is maintained 3.0mbar, and applies the radio-frequency electrical energy that power density is 70mW/cm2, the rete that is deposited has the luminous energy band gap of 1.9～2.1 electronvolt.
The above only is preferred embodiment of the present utility model, is not the utility model is done any pro forma restriction.For example, although each in the accompanying drawings layer all be smooth and thickness almost equal, this only is that principle of the present utility model is described for convenience and clearly.Any those of ordinary skill in the art, do not breaking away under the technical solutions of the utility model scope situation, all can utilize the technology contents of above-mentioned announcement that technical solutions of the utility model are made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solutions of the utility model, all still belongs in the protection range of technical solutions of the utility model any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present utility model.
Claims (5)
1. laminate film structure, before the electrically conducting transparent of film photovoltaic device between electrode and the photoelectric conversion layer, it is characterized in that: comprise first rete and second rete, electrode joins before described first rete and the described electrically conducting transparent, and described second rete and described photoelectric conversion layer join.
2. laminate film structure as claimed in claim 1 is characterized in that: the thickness of described first rete is 1～10 nanometer.
3. laminate film structure as claimed in claim 1 is characterized in that: the thickness of described second rete is 5～20 nanometers.
4. film photovoltaic device; comprise glass substrate, the preceding electrode of electrically conducting transparent, back electrode and protection backboard; before described electrically conducting transparent, have laminated construction p layer, light absorption active layer i layer and n layer between electrode and the back electrode; it is characterized in that: described laminated construction p layer comprises first rete and second rete; electrode joins before described first rete and the electrically conducting transparent, and described second rete and described i layer join.
5. film photovoltaic device as claimed in claim 4 is characterized in that: described first rete has high conductivity, and described second rete has high band gap and fabricating low-defect-density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920144437 CN201440421U (en) | 2009-02-23 | 2009-02-23 | Stacked film structure and film photovoltaic device comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920144437 CN201440421U (en) | 2009-02-23 | 2009-02-23 | Stacked film structure and film photovoltaic device comprising same |
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| Publication Number | Publication Date |
|---|---|
| CN201440421U true CN201440421U (en) | 2010-04-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200920144437 Expired - Fee Related CN201440421U (en) | 2009-02-23 | 2009-02-23 | Stacked film structure and film photovoltaic device comprising same |
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| Country | Link |
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| CN (1) | CN201440421U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020237695A1 (en) * | 2019-05-28 | 2020-12-03 | 信利半导体有限公司 | Solar cell and preparation method thereof |
-
2009
- 2009-02-23 CN CN 200920144437 patent/CN201440421U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020237695A1 (en) * | 2019-05-28 | 2020-12-03 | 信利半导体有限公司 | Solar cell and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING JINGCHENG APOLLO OPTOELECTRONICS EQUIPMENT |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20110727 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Co-patentee after: Beijing Jingcheng Boyang Optoelectronic Equipment Co.,Ltd. Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: 362000 Jiangnan hi tech Zone, No. 1303 South Ring Road, Licheng District, Quanzhou, Fujian Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100421 Termination date: 20140223 |