CN109509807A - Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof - Google Patents
Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof Download PDFInfo
- Publication number
- CN109509807A CN109509807A CN201811472120.6A CN201811472120A CN109509807A CN 109509807 A CN109509807 A CN 109509807A CN 201811472120 A CN201811472120 A CN 201811472120A CN 109509807 A CN109509807 A CN 109509807A
- Authority
- CN
- China
- Prior art keywords
- silicon
- layer
- doped layer
- amorphous silicon
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 71
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of emitter structure and preparation method thereof of silicon/crystalline silicon heterojunction solar battery of the present invention, it includes N-type crystalline silicon piece, the front and back of the N-type crystalline silicon piece is equipped with amorphous silicon intrinsic layer, TCO conductive film is equipped on the outside of amorphous silicon intrinsic layer, the outside of the TCO conductive film is equipped with several Ag electrodes, it is equipped with N layers of amorphous silicon doped layer between the amorphous silicon intrinsic layer and TCO conductive film of the wherein one side of the N-type crystalline silicon piece, TMB doped layer, B2H6 doped layer are equipped between the amorphous silicon intrinsic layer and TCO conductive film of another side.The present invention is doped using TMB gas, it is therefore prevented that foreign atom B is spread to amorphous silicon intrinsic layer, promotes open-circuit voltage；TMB gas forbidden bandwidth is big, and light can rise short circuit current more effectively by the doped layer；It is doped close to the side TCO using B2H6 gas, the electric conductivity of doped layer is more preferable；Promote the photoelectric conversion efficiency of HJT solar battery.
Description
Technical field
The present invention relates to photovoltaic high-efficiency battery technical field more particularly to a kind of transmittings of silicon/crystalline silicon heterojunction solar battery
Pole structure and preparation method thereof.
Background technique
With the fast development of photovoltaic technology, the transfer efficiency of crystal-silicon solar cell improves year by year.In current photovoltaic work
Industry, the transfer efficiency of single crystal silicon solar cell have reached 20% or more, and the transfer efficiency of polycrystalline silicon solar cell is up to 18.5%
More than.However the back of the silica-based solar cell of large-scale production, transfer efficiency up to 22.5% or more only U.S. SunPower company
Contact the amorphous with intrinsic sheet of solar cell (Interdigitated Back Contact, IBC) and Matsushita Corporation of Japan
Silicon/crystalline silicon heterojunction solar battery (Hetero-junction with Intrinsic Thin layer, HJT).And IBC
Solar cell is compared, and HJT battery has many advantages, such as less energy consumption, process flow are simple, temperature coefficient is small, these are also HJT
The reason of solar battery can show one's talent from numerous efficient silica-based solar cell schemes.
Currently, China is wideling popularize distributed solar energy photovoltaic power generation, since Roof Resources are limited, and also it is distributed
The solar module of photovoltaic power generation demand high conversion efficiency has efficient, generating electricity on two sides excellent just because of HJT solar cell
Gesture shows wide application prospect in photovoltaic power station.
The structure of existing HJT battery is to do one layer of amorphous silicon intrinsic layer and doped layer n type single crystal silicon is two-sided.Amorphous silicon sheet
It levies layer and is mainly passivated surface of crystalline silicon defect, surface defect state is reduced, to reduce Carrier recombination；Amorphous silicon doped layer master
If forming PN junction and field-effect passivation layer with crystal silicon.
Referring to Fig. 1, the prior art is completed P layers of amorphous silicon doped layer only with B2H6 gas doping, is mixed by B2H6 gas
P layers of thermal stability of amorphous silicon doped layer of miscellaneous formation are poor, and B atom readily diffuses into amorphous silicon intrinsic layer, influences intrinsic layer
Passivation effect causes the open-circuit voltage of solar battery low, causes the transfer efficiency of solar battery low；It is mixed by B2H6 gas
P layers of amorphous silicon doped layer of forbidden bandwidth of miscellaneous formation is low, can absorb more sunlights, and optical loss increases, and leads to the sun
The short circuit current of energy battery is low, causes the transfer efficiency of solar battery low.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of emitter structures of silicon/crystalline silicon heterojunction solar battery
And preparation method thereof, reduction of the B atom to amorphous silicon intrinsic layer diffusion bring forbidden bandwidth when can both prevent B2H6 from adulterating,
It is able to satisfy P layers of amorphous silicon doped layer of high conductivity simultaneously.
The object of the present invention is achieved like this:
A kind of emitter structure of silicon/crystalline silicon heterojunction solar battery, it includes N-type crystalline silicon piece, the N-type crystalline silicon piece
Front and back is equipped with amorphous silicon intrinsic layer, and TCO conductive film, the TCO conductive film are equipped on the outside of amorphous silicon intrinsic layer
Outside be equipped with several Ag electrodes, set between the amorphous silicon intrinsic layer and TCO conductive film of the wherein one side of the N-type crystalline silicon piece
There are N layers of amorphous silicon doped layer, TMB doped layer is equipped between the amorphous silicon intrinsic layer and TCO conductive film of another side, B2H6 is adulterated
Layer, TMB doped layer are positioned close to the side of amorphous silicon intrinsic layer, and B2H6 doped layer is positioned close to the side of TCO conductive film.
A kind of emitter structure of silicon/crystalline silicon heterojunction solar battery, the TMB doped layer with a thickness of 1 ~ 20nm, forbidden band
Width is 1.6 ~ 1.9eV.
A kind of emitter structure of silicon/crystalline silicon heterojunction solar battery, the B2H6 doped layer with a thickness of 1 ~ 20nm, prohibit
Bandwidth is 1.4 ~ 1.6eV.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery, including the following steps:
The first step chooses substrate n type single crystal silicon piece progress making herbs into wool, cleaning treatment；
Second step, double intrinsic amorphous silicon layers that the positive back side is prepared by PECVD；
Third step, selection N-type amorphous silicon film are light-receiving surface doped layer；
4th step, using plasma enhanced chemical vapor deposition prepare N-type non-crystalline silicon layer, i.e., amorphous silicon doped layer N layers；
5th step prepares P-type non-crystalline silicon layer using plasma activated chemical vapour deposition, and first layer adulterates to form TMB and mix using TMB
Diamicton, the second layer are doped to form B2H6 doped layer using B2H6；
6th step deposits TCO conductive film using reactive ion deposition method；
7th step forms positive back side Ag electrode by silk-screen printing；
8th step, solidification are so that form good Ohmic contact between silver grating line and TCO conductive film；
9th step, the electrical property for carrying out test battery.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery, the TMB doped layer with a thickness of 1
~ 20nm, forbidden bandwidth are 1.6 ~ 1.9eV；The B2H6 doped layer with a thickness of 1 ~ 20nm, forbidden bandwidth is 1.4 ~ 1.6eV, institute
Stating P-type non-crystalline silicon layer overall thickness is 7 ~ 15nm.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery, the amorphous silicon intrinsic at the positive back side
Layer is with a thickness of 5 ~ 10nm.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery, the amorphous silicon doped layer N thickness
Degree is 4 ~ 8nm.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery, the TCO conductive film with a thickness of 70 ~
110nm。
Compared with prior art, the beneficial effects of the present invention are:
For the present invention for HJT heterojunction solar battery structure, P layers of shady face amorphous silicon doped layer use two-layer sandwich,
It is doped close to intrinsic amorphous silicon layer using TMB gas, it is therefore prevented that foreign atom B(boron) it is spread to amorphous silicon intrinsic layer, from
And guarantee the passivation effect of intrinsic amorphous silicon, promote open-circuit voltage Voc；It is mixed close to intrinsic amorphous silicon layer using TMB gas
Miscellaneous, forbidden bandwidth is big, and light, to increase absorption of the crystalline silicon to light, can promote short circuit electricity more effectively by the doped layer
Flow Isc；It is doped close to the side TCO using B2H6 gas, the electric conductivity of doped layer is more preferable, the series electrical of solar battery
It is lower to hinder Rs, to keep fill factor FF higher；The final photoelectric conversion efficiency for promoting HJT solar battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing HJT heterojunction solar battery.
Fig. 2 is the structural schematic diagram of HJT heterojunction solar battery of the present invention.
Wherein:
N-type crystalline silicon piece 1, amorphous silicon intrinsic layer 2, amorphous silicon doped layer N layer 3, amorphous silicon doped layer P layer 4, TMB doped layer 5,
B2H6 doped layer 6, TCO conductive film 7, Ag electrode 8.
Specific embodiment
Embodiment 1:
Referring to fig. 2, the emitter structure of a kind of silicon/crystalline silicon heterojunction solar battery of the present invention, it includes N-type crystalline silicon
The front and back of piece 1, the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with amorphous silicon doped layer N layer 3, the positive amorphous silicon doped layer N
The outside of layer 3 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8；
TMB doped layer 5 is equipped on the outside of the amorphous silicon intrinsic layer 2 at the back side, the outside of the TMB doped layer 5 is mixed equipped with B2H6
Diamicton 6, the outside of the B2H6 doped layer 6 are equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes
8。
The TMB doped layer 5 with a thickness of 6nm, forbidden bandwidth 1.75eV；The B2H6 doped layer 6 with a thickness of
4nm, forbidden bandwidth 1.4eV.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery of the present invention, including it is following several
A step:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side is with a thickness of 8nm；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-type non-crystalline silicon layer, i.e. amorphous silicon doped layer N layer 3 are prepared using plasma enhanced chemical vapor deposition, with a thickness of
6nm；
(5) P-type non-crystalline silicon layer, 10 nm of overall thickness are prepared using plasma activated chemical vapour deposition, first layer is adulterated using TMB
TMB doped layer 5 is formed, the second layer is doped to form B2H6 doped layer 6 using B2H6；The TMB doped layer 5 with a thickness of
6nm, forbidden bandwidth 1.75eV；The B2H6 doped layer 6 with a thickness of 4nm, forbidden bandwidth 1.4eV；
(6) TCO conductive film 7 is deposited using reactive ion deposition (RPD) method, with a thickness of 100nm；
(7) positive back side Ag electrode 8 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(9) electrical property of test battery is carried out.
Embodiment 2:
Referring to fig. 2, the emitter structure of a kind of silicon/crystalline silicon heterojunction solar battery of the present invention, it includes N-type crystalline silicon
The front and back of piece 1, the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with amorphous silicon doped layer N layer 3, the positive amorphous silicon doped layer N
The outside of layer 3 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8；
TMB doped layer 5 is equipped on the outside of the amorphous silicon intrinsic layer 2 at the back side, the outside of the TMB doped layer 5 is mixed equipped with B2H6
Diamicton 6, the outside of the B2H6 doped layer 6 are equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes
8。
The TMB doped layer 5 with a thickness of 5nm, forbidden bandwidth 1.7eV；The B2H6 doped layer 6 with a thickness of 5nm,
Forbidden bandwidth is 1.4eV.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery of the present invention, including it is following several
A step:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side is with a thickness of 8nm；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-type non-crystalline silicon layer, i.e. amorphous silicon doped layer N layer 3 are prepared using plasma enhanced chemical vapor deposition, with a thickness of
6nm；
(5) P-type non-crystalline silicon layer, 10 nm of overall thickness are prepared using plasma activated chemical vapour deposition, first layer is adulterated using TMB
TMB doped layer 5 is formed, the second layer is doped to form B2H6 doped layer 6 using B2H6；The TMB doped layer 5 with a thickness of
5nm, forbidden bandwidth 1.7eV；The B2H6 doped layer 6 with a thickness of 5nm, forbidden bandwidth 1.4eV；
(6) TCO conductive film 7 is deposited using reactive ion deposition (RPD) method, with a thickness of 100nm；
(7) positive back side Ag electrode 8 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(9) electrical property of test battery is carried out.
Embodiment 3:
Referring to fig. 2, the emitter structure of a kind of silicon/crystalline silicon heterojunction solar battery of the present invention, it includes N-type crystalline silicon
The front and back of piece 1, the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with amorphous silicon doped layer N layer 3, the positive amorphous silicon doped layer N
The outside of layer 3 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8；
TMB doped layer 5 is equipped on the outside of the amorphous silicon intrinsic layer 2 at the back side, the outside of the TMB doped layer 5 is mixed equipped with B2H6
Diamicton 6, the outside of the B2H6 doped layer 6 are equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes
8。
The TMB doped layer 5 with a thickness of 5nm, forbidden bandwidth 1.7eV；The B2H6 doped layer 6 with a thickness of 3nm,
Forbidden bandwidth is 1.4eV.
A kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery of the present invention, including it is following several
A step:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side is with a thickness of 8nm；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-type non-crystalline silicon layer, i.e. amorphous silicon doped layer N layer 3 are prepared using plasma enhanced chemical vapor deposition, with a thickness of
6nm；
(5) P-type non-crystalline silicon layer, overall thickness 8nm are prepared using plasma activated chemical vapour deposition, first layer adulterates shape using TMB
At TMB doped layer 5, the second layer is doped to form B2H6 doped layer 6 using B2H6；The TMB doped layer 5 with a thickness of 5nm,
Forbidden bandwidth is 1.7eV；The B2H6 doped layer 6 with a thickness of 3nm, forbidden bandwidth 1.4eV；
(6) TCO conductive film 7 is deposited using reactive ion deposition (RPD) method, with a thickness of 100nm；
(7) positive back side Ag electrode 8 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(9) electrical property of test battery is carried out.
There are following differences with B2H6 doping for TMB doping: the thermal stability ratio B2H6 doping of TMB doping is more stable； TMB
The forbidden bandwidth ratio B2H6 of doping is adulterated wider；The difference of the electric conductivity ratio B2H6 doping of TMB doping.
By the embodiment of the present invention data and the prior art all the same in addition to P-type non-crystalline silicon layer structure difference other parameters
The electrical property of comparison, the present invention and the prior art is compared referring to following table, mainly from open-circuit voltage Voc, short circuit current Isc and filling
Factor FF embodies, and the promotion of available solar battery unit for electrical property parameters of the invention makes the transfer efficiency of solar battery
Eta has absolute 0.15% promotion.
The above is only specific application examples of the invention, are not limited in any way to protection scope of the present invention.All uses
Equivalent transformation or equivalent replacement and the technical solution formed, all fall within rights protection scope of the present invention.
Claims (8)
1. a kind of emitter structure of silicon/crystalline silicon heterojunction solar battery, it includes N-type crystalline silicon piece (1), the N-type crystalline silicon
The front and back of piece (1) is equipped with amorphous silicon intrinsic layer (2), and amorphous silicon intrinsic layer is equipped with TCO conductive film on the outside of (2)
(7), the outside of the TCO conductive film (7) be equipped with several Ag electrodes (8), it is characterised in that: the N-type crystalline silicon piece (1) its
N layers of amorphous silicon doped layer (3) are equipped between the amorphous silicon intrinsic layer (2) and TCO conductive film (7) of middle one side, the amorphous of another side
TMB doped layer (5), B2H6 doped layer (6), TMB doped layer (5) setting are equipped between silicon intrinsic layer (2) and TCO conductive film (7)
In the side close to amorphous silicon intrinsic layer (2), B2H6 doped layer (6) is positioned close to the side of TCO conductive film (7).
2. a kind of emitter structure of silicon/crystalline silicon heterojunction solar battery according to claim 1, it is characterised in that: institute
State TMB doped layer (5) with a thickness of 1 ~ 20nm, forbidden bandwidth is 1.6 ~ 1.9eV.
3. a kind of emitter structure of silicon/crystalline silicon heterojunction solar battery according to claim 1, it is characterised in that: described
B2H6 doped layer (6) with a thickness of 1 ~ 20nm, forbidden bandwidth is 1.4 ~ 1.6eV.
4. a kind of preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery described in claim 1, feature exist
In, including the following steps:
The first step chooses substrate n type single crystal silicon piece (1) progress making herbs into wool, cleaning treatment；
Second step, double intrinsic amorphous silicon layers that the positive back side is prepared by PECVD；
Third step, selection N-type amorphous silicon film are light-receiving surface doped layer；
4th step, using plasma enhanced chemical vapor deposition prepare N-type non-crystalline silicon layer, i.e., amorphous silicon doped layer N layers (3)；
5th step prepares P-type non-crystalline silicon layer using plasma activated chemical vapour deposition, and first layer adulterates to form TMB and mix using TMB
Diamicton (5), the second layer are doped to form B2H6 doped layer (6) using B2H6；
6th step deposits TCO conductive film (7) using reactive ion deposition method；
7th step forms positive back side Ag electrode (8) by silk-screen printing；
8th step, solidification are so that form good Ohmic contact between silver grating line and TCO conductive film (7)；
9th step, the electrical property for carrying out test battery.
5. the preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery according to claim 4, feature exist
In: the TMB doped layer (5) with a thickness of 1 ~ 20nm, forbidden bandwidth is 1.6 ~ 1.9eV；The thickness of the B2H6 doped layer (6)
Degree is 1 ~ 20nm, and forbidden bandwidth is 1.4 ~ 1.6eV, and the P-type non-crystalline silicon layer overall thickness is 7 ~ 15nm.
6. the preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery according to claim 4, feature exist
In: the amorphous silicon intrinsic layer (2) at the positive back side is with a thickness of 5 ~ 10nm.
7. the preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery according to claim 4, feature exist
In: N layers of the amorphous silicon doped layer (3) is with a thickness of 4 ~ 8nm.
8. the preparation method of the emitter structure of silicon/crystalline silicon heterojunction solar battery according to claim 4, feature exist
In: the TCO conductive film (7) is with a thickness of 70 ~ 110nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811472120.6A CN109509807B (en) | 2018-12-04 | 2018-12-04 | Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811472120.6A CN109509807B (en) | 2018-12-04 | 2018-12-04 | Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109509807A true CN109509807A (en) | 2019-03-22 |
| CN109509807B CN109509807B (en) | 2020-06-16 |
Family
ID=65750248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811472120.6A Active CN109509807B (en) | 2018-12-04 | 2018-12-04 | Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109509807B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246907A (en) * | 2019-07-12 | 2019-09-17 | 通威太阳能（成都）有限公司 | A kind of battery structure with promotion heterojunction solar battery photoelectric conversion efficiency |
| CN110459639A (en) * | 2019-08-13 | 2019-11-15 | 江苏爱康能源研究院有限公司 | Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film |
| CN111883621A (en) * | 2020-07-07 | 2020-11-03 | 江苏爱康能源研究院有限公司 | TCO (transparent conductive oxide) coating process method of high-efficiency crystalline silicon heterojunction solar cell |
| CN113451445A (en) * | 2021-01-08 | 2021-09-28 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Solar cell and manufacturing method thereof |
| CN114678434A (en) * | 2021-12-28 | 2022-06-28 | 浙江爱旭太阳能科技有限公司 | Heterojunction battery for improving photoelectric conversion efficiency |
| WO2022170872A1 (en) * | 2021-02-09 | 2022-08-18 | 通威太阳能（成都）有限公司 | Hjt cell having high photoelectric conversion efficiency and preparation method therefor |
| EP4071830A4 (en) * | 2021-02-09 | 2024-02-28 | Tongwei Solar (Jintang) Co., Ltd. | High-efficiency silicon heterojunction solar cell and preparation method therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101556976A (en) * | 2008-04-08 | 2009-10-14 | 东捷科技股份有限公司 | Solar battery with improved interface structure |
| CN102169925A (en) * | 2011-03-21 | 2011-08-31 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing buffer layer of amorphous silicon thin-film solar cell |
| US20150287868A1 (en) * | 2014-04-02 | 2015-10-08 | Korea Institute Of Energy Research | Ultra thin hit solar cell and fabricating method of the same |
| CN107170850A (en) * | 2017-05-25 | 2017-09-15 | 君泰创新（北京）科技有限公司 | The preparation method and heterojunction solar battery of a kind of heterojunction solar battery |
-
2018
- 2018-12-04 CN CN201811472120.6A patent/CN109509807B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101556976A (en) * | 2008-04-08 | 2009-10-14 | 东捷科技股份有限公司 | Solar battery with improved interface structure |
| CN102169925A (en) * | 2011-03-21 | 2011-08-31 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing buffer layer of amorphous silicon thin-film solar cell |
| US20150287868A1 (en) * | 2014-04-02 | 2015-10-08 | Korea Institute Of Energy Research | Ultra thin hit solar cell and fabricating method of the same |
| CN107170850A (en) * | 2017-05-25 | 2017-09-15 | 君泰创新（北京）科技有限公司 | The preparation method and heterojunction solar battery of a kind of heterojunction solar battery |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246907A (en) * | 2019-07-12 | 2019-09-17 | 通威太阳能（成都）有限公司 | A kind of battery structure with promotion heterojunction solar battery photoelectric conversion efficiency |
| CN110459639A (en) * | 2019-08-13 | 2019-11-15 | 江苏爱康能源研究院有限公司 | Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film |
| CN111883621A (en) * | 2020-07-07 | 2020-11-03 | 江苏爱康能源研究院有限公司 | TCO (transparent conductive oxide) coating process method of high-efficiency crystalline silicon heterojunction solar cell |
| CN113451445A (en) * | 2021-01-08 | 2021-09-28 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Solar cell and manufacturing method thereof |
| WO2022170872A1 (en) * | 2021-02-09 | 2022-08-18 | 通威太阳能（成都）有限公司 | Hjt cell having high photoelectric conversion efficiency and preparation method therefor |
| AU2021426902B2 (en) * | 2021-02-09 | 2024-01-18 | Tongwei Solar (Anhui) Co., Ltd. | HJT cell having high photoelectric conversion efficiency and preparation method therefor |
| EP4071830A4 (en) * | 2021-02-09 | 2024-02-28 | Tongwei Solar (Jintang) Co., Ltd. | High-efficiency silicon heterojunction solar cell and preparation method therefor |
| US11973151B2 (en) | 2021-02-09 | 2024-04-30 | Tongwei Solar (Chengdu) Co., Ltd. | HJT cell having high photoelectric conversion efficiency and preparation method therefor |
| CN114678434A (en) * | 2021-12-28 | 2022-06-28 | 浙江爱旭太阳能科技有限公司 | Heterojunction battery for improving photoelectric conversion efficiency |
| CN114678434B (en) * | 2021-12-28 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | Heterojunction battery capable of improving photoelectric conversion efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109509807B (en) | 2020-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109509807A (en) | Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof | |
| CN109638101A (en) | The emitter structure and preparation method thereof of the double-deck amorphous silicon doped layer solar cell | |
| CN109638094A (en) | Efficient heterojunction battery intrinsic amorphous silicon passivation layer structure and preparation method thereof | |
| CN112802910A (en) | High-efficiency silicon heterojunction solar cell and preparation method thereof | |
| CN110310999A (en) | The hetero-junction solar cell structure and preparation method thereof of gradual change lamination TCO conductive film | |
| CN104733557B (en) | HIT solar energy battery and method for improving short-circuit current density of HIT battery | |
| CN206271715U (en) | A kind of crystal silicon heterojunction solar battery | |
| CN109449227A (en) | Silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer and preparation method thereof | |
| CN107819052A (en) | A kind of efficiently crystal silicon non crystal heterogeneous agglomeration battery structure and preparation method thereof | |
| CN109461780A (en) | Efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree and preparation method thereof | |
| CN102341919B (en) | Solar cell | |
| CN103985778B (en) | Heterojunction solar battery with selective emitter and preparation method thereof | |
| CN103219413A (en) | Graphene radial heterojunction solar cell and preparation method thereof | |
| CN106449850B (en) | A kind of efficient silicon based hetero-junction double-side cell and preparation method thereof | |
| CN215220730U (en) | High-efficiency silicon heterojunction solar cell | |
| CN106252430A (en) | A kind of crystal silicon heterojunction solar battery | |
| CN106024964A (en) | N-type back junction double-sided solar cell manufacturing method | |
| CN112701181A (en) | Preparation method of low-resistivity heterojunction solar cell | |
| CN110416345A (en) | Heterojunction solar battery structure of the double-deck amorphous silicon intrinsic layer and preparation method thereof | |
| CN210156406U (en) | Heterojunction solar cell structure with double-layer amorphous silicon intrinsic layer | |
| CN117059691A (en) | Heterojunction solar cell | |
| CN202695454U (en) | Crystalline silicon solar cell with multiple layers of anti-reflection films | |
| CN110459639A (en) | Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film | |
| CN103227228A (en) | P-type silicon substrate heterojunction cell | |
| CN107039554A (en) | A kind of cadmium telluride diaphragm solar battery and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220401 Address after: 313100 zheneng Smart Energy Technology Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee after: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Patentee after: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Address before: No. 188, Huachang Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221118 Address after: 313100 in the factory area of Zhejiang Aikang Photoelectric Technology Co., Ltd., zheneng Smart Energy Technology Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee after: Huzhou Aikang Photoelectric Technology Co.,Ltd. Patentee after: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Patentee after: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Address before: 313100 zheneng Smart Energy Technology Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee before: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Patentee before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20240624 Granted publication date: 20200616 |