CN202695454U - Crystalline silicon solar cell with multiple layers of anti-reflection films - Google Patents
Crystalline silicon solar cell with multiple layers of anti-reflection films Download PDFInfo
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- CN202695454U CN202695454U CN 201120566236 CN201120566236U CN202695454U CN 202695454 U CN202695454 U CN 202695454U CN 201120566236 CN201120566236 CN 201120566236 CN 201120566236 U CN201120566236 U CN 201120566236U CN 202695454 U CN202695454 U CN 202695454U
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Abstract
The utility model discloses a crystalline silicon solar cell with multiple layers of anti-reflection films. The crystalline silicon solar cell comprises a silicon substrate, a diffusing layer combined on the surface of the silicon substrate, and an anti-reflection layer and an electrode which are combined on the diffusing layer. The anti-reflection layer is formed by a first silicon nitride film, a second silicon nitride film and a silicon oxide film which are sequentially combined on the diffusing layer from bottom to top. The crystalline silicon solar cell realizes selective absorption of the solar energy, reducing the scatter loss of the sunlights. In addition, quantum excitation effect is realized in the three anti-reflection films, enhancing the energy collecting efficiency and improving the shortwave response. The surface passivation effect and the surface anti-reflection effect are improved as a result of the change of the interface absorption coefficient, further increasing the current collecting efficiency and greatly prolonging the minority carrier lifetime. The crystalline silicon solar cell of the utility model is simple in manufacture process, high in production efficiency and low in production cost and is suitable for industrial large-scale production.
Description
Technical field
The utility model relates to the solar cell manufacture technology field, is specifically related to a kind of crystal silicon solar energy battery with multi-layer anti-reflective film.
Background technology
Solar cell is a kind of solid state device that utilizes semiconductor P-N junction photovoltaic effect transform light energy to be become electric energy, has another name called photovoltaic device, is the significant components of crystal silicon solar energy battery system.Solar cell is mainly by mixing 5 valency element phosphors (Phosphors) and rely on the N type semiconductor of a large amount of electron conductions and the 3 valency element borons (Boron) and rely on the P type semiconductor of hole conduction to form of mixing, N type semiconductor and P type semiconductor be at the interface p-n junction.
The existing stock of making single crystal silicon solar cell is that purity reaches 0.999999%, resistivity greater than 10 Europe/centimetre p type single crystal silicon; it comprises p-n junction, positive and negative electrode (laying respectively on the front and back of battery) and anti-reflective film etc.; the solar module that is comprised of solar battery cell then is being subjected to plane of illumination to add printing opacity cover plate (as quartzy or ooze cerium glass) protection, with prevent battery be subjected in the outer space model Alan radiation zone (earth-circling High energy particles Radiation band) in the radiation damage of high energy electron and proton.
N type semiconductor wherein one side is distributed with very thin metal grid lines, another side is close to P type semiconductor, and in order to reduce sun reflection of light, whole crystal-silicon solar cell surface needs to cover the special anti-reflective film of one deck, claim again antireflective coating, anti-reflective film generally adopts silicon nitride film.At present, in order to save consumptive material, crystal silicon chip has to the trend of thin type development, so can reduce electricity conversion, and the structure of anti-reflective film is also existing larger improved space aspect the raising photoelectric conversion efficiency.
The utility model content
The purpose of this utility model is to provide that a kind of manufacture craft is simple, production efficiency is high, can realize to the selectivity of solar energy absorb, reduce sunlight scattering loss, improve the crystal silicon solar energy battery with multi-layer anti-reflective film of efficiency of energy collection.
Above-mentioned purpose of the present utility model realizes by the following technical solutions: a kind of crystal silicon solar energy battery with multi-layer anti-reflective film, comprise silicon chip, be compounded in the lip-deep diffusion layer of silicon chip, be compounded in anti-reflecting layer and electrode on the diffusion layer, it is characterized in that described anti-reflecting layer consists of by the first silicon nitride film, the second silicon nitride film and silicon oxide film are compound successively from bottom to up on described diffusion layer.
The utility model can be realized the selectivity of solar energy is absorbed, and reduces the scattering loss of sunlight; And in three layers of anti-film, can realize the quantum priming effect, and improve efficiency of energy collection, increase short wave response; Rely on the variation of interface absorption coefficient, increased surface passivation and surperficial anti-reflection effect, and then improved electric current collection efficient, greatly prolonged minority carrier life time; Manufacture craft of the present utility model is simple, production efficiency is high and production cost is lower, is applicable to large-scale industrialization production.
As a kind of execution mode of the present utility model, described silicon chip is P type silicon chip, and described diffusion layer is n type diffused layer.
As a kind of execution mode of the present utility model, described the first silicon nitride film and the second silicon nitride film all adopt spontaneous plasma enhanced chemical vapor deposition method to make; Described silicon oxide film adopts long-distance plasma to strengthen chemical vapour deposition technique and makes.
As preferred implementation of the present utility model, the thickness range of described the first silicon nitride film is 15～25nm, and its refractive index is 2.0～2.1; The thickness range of described the second silicon nitride film is 60～80nm, and its refractive index is 2.0～2.1; The thickness range of described silicon oxide film is 20～80nm, and its refractive index is 1.4～1.7.
Compared with prior art, the utlity model has following significant technique effect:
(1) anti-reflection film of the present utility model is three layers, can realize the selectivity of solar energy is absorbed, and reduces the scattering loss of sunlight, and can realize the quantum priming effect in three-layer thin-film, improves efficiency of energy collection, increases short wave response.
(2) anti-reflection film of the present utility model is three layers, can rely on the variation of interface absorption coefficient, increases surface passivation and surperficial anti-reflection effect, has greatly prolonged minority carrier life time, and then has improved electric current collection efficient.
(3) manufacture craft of the present utility model is simple, production efficiency is high, production cost is lower, is applicable to large-scale industrialization production.
(4) the utility model is compared its conversion efficiency Δ Eta (%) 〉=0.25%, voltage Δ Voc 〉=2.1mV and electric current Δ Isc 〉=130mA with existing solar cell with individual layer anti-reflective film.
(5) of the present utility model simple in structure, practical, applicable to the solar cell with different concrete structures, therefore can access in the solar cell field of making and promote widely and be suitable for.
Description of drawings
The utility model is described in further detail below in conjunction with the drawings and specific embodiments.
Fig. 1 is structural representation of the present utility model.
Embodiment
Embodiment 1
As shown in Figure 1, it is a kind of crystal silicon solar energy battery 1 with multi-layer anti-reflective film of the utility model, comprise P type silicon chip 11, be compounded in P type silicon chip 11 lip-deep n type diffused layers 12, be compounded in anti-reflecting layer and electrode (not shown in FIG.) on the n type diffused layer 12, anti-reflecting layer consists of by the first silicon nitride film 13, the second silicon nitride film 14 and silicon oxide film 15 are compound successively from bottom to up on n type diffused layer 12.
The first silicon nitride film 13 and the second silicon nitride film 14 all adopt spontaneous plasma enhanced chemical vapor deposition method direct plasma (PECVD) to make; And silicon oxide film 15 adopts long-distance plasma enhancing chemical vapour deposition technique remote plasma (PECVD) to make.
In the present embodiment, the thickness of the first silicon nitride film 13 is 15nm, and refractive index is 2.1; The thickness of the second silicon nitride film 14 is 60nm, and its refractive index is 2.1; The thickness of silicon oxide film 15 is 20nm, and its refractive index is 1.7.
The first silicon nitride film 13, the second silicon nitride film 14 and silicon oxide film 15 can be realized the selectivity of solar energy is absorbed, and reduce the scattering loss of sunlight, improve efficiency of energy collection, increase short wave response; Rely on the variation of interface absorption coefficient, increased surface passivation and surperficial anti-reflection effect, and then improved electric current collection efficient, greatly prolonged minority carrier life time.
Manufacture craft of the present utility model is: (1) making herbs into wool; (2) silicon chip surface after making herbs into wool spreads; (3) dephosphorization silex glass (PSG); (4) use the plasma enhanced chemical vapor deposition method to carry out multicoating, on the diffusion layer surface, form successively from bottom to up the first silicon nitride film, the second silicon nitride film and the 3rd layer of silicon oxide film; (5) silk screen printing; (6) sintering is to form positive and negative electrode; (7) test.
Embodiment 2
The difference of the present embodiment and embodiment 1 is: the thickness of the first silicon nitride film 13 is 25nm, and refractive index is 2.0; The thickness of the second silicon nitride film 14 is 80nm, and its refractive index is 2.0; The thickness of silicon oxide film 15 is 80nm, and its refractive index is 1.4.
Embodiment 3
The difference of the present embodiment and embodiment 1 is: the thickness of the first silicon nitride film 13 is 20nm, and refractive index is 2.05; The thickness of the second silicon nitride film 14 is 70nm, and its refractive index is 2.05; The thickness of silicon oxide film 15 is 50nm, and its refractive index is 1.55.
Execution mode of the present utility model is not limited to this; ordinary skill knowledge and customary means according to this area; do not breaking away under the above-mentioned basic fundamental thought of the utility model prerequisite; the utility model can also be made modification, replacement or the change of other various ways, all drops within the utility model rights protection scope.
Claims (4)
1. crystal silicon solar energy battery with multi-layer anti-reflective film, comprise silicon chip, be compounded in the lip-deep diffusion layer of silicon chip, be compounded in anti-reflecting layer and electrode on the diffusion layer, it is characterized in that: described anti-reflecting layer consists of by the first silicon nitride film, the second silicon nitride film and silicon oxide film are compound successively from bottom to up on described diffusion layer.
2. the crystal silicon solar energy battery with multi-layer anti-reflective film according to claim 1, it is characterized in that: described silicon chip is P type silicon chip, and described diffusion layer is n type diffused layer.
3. the crystal silicon solar energy battery with multi-layer anti-reflective film according to claim 1 and 2, it is characterized in that: described the first silicon nitride film and the second silicon nitride film all adopt spontaneous plasma enhanced chemical vapor deposition method to make; Described silicon oxide film adopts long-distance plasma to strengthen chemical vapour deposition technique and makes.
4. the crystal silicon solar energy battery with multi-layer anti-reflective film according to claim 3, it is characterized in that: the thickness range of described the first silicon nitride film is 15～25nm, its refractive index is 2.0～2.1; The thickness range of described the second silicon nitride film is 60～80nm, and its refractive index is 2.0～2.1; The thickness range of described silicon oxide film is 20～80nm, and its refractive index is 1.4～1.7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120566236 CN202695454U (en) | 2011-12-29 | 2011-12-29 | Crystalline silicon solar cell with multiple layers of anti-reflection films |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120566236 CN202695454U (en) | 2011-12-29 | 2011-12-29 | Crystalline silicon solar cell with multiple layers of anti-reflection films |
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| CN202695454U true CN202695454U (en) | 2013-01-23 |
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| CN 201120566236 Expired - Lifetime CN202695454U (en) | 2011-12-29 | 2011-12-29 | Crystalline silicon solar cell with multiple layers of anti-reflection films |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117310A (en) * | 2013-02-27 | 2013-05-22 | 上海艾力克新能源有限公司 | Double-layer silicon nitride antireflection film and manufacture method thereof |
| CN108680850A (en) * | 2018-04-24 | 2018-10-19 | 云谷（固安）科技有限公司 | Minority carrier life time detection device and detection method |
| CN108735824A (en) * | 2017-04-24 | 2018-11-02 | 常州亚玛顿股份有限公司 | A kind of bright enhancement film crystal silicon solar energy battery plate and its manufacturing method |
| CN114361265A (en) * | 2021-12-22 | 2022-04-15 | 天津爱旭太阳能科技有限公司 | Antireflection layer of PERC (Positive electrode collector) battery, manufacturing method of antireflection layer and battery |
-
2011
- 2011-12-29 CN CN 201120566236 patent/CN202695454U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117310A (en) * | 2013-02-27 | 2013-05-22 | 上海艾力克新能源有限公司 | Double-layer silicon nitride antireflection film and manufacture method thereof |
| CN108735824A (en) * | 2017-04-24 | 2018-11-02 | 常州亚玛顿股份有限公司 | A kind of bright enhancement film crystal silicon solar energy battery plate and its manufacturing method |
| CN108680850A (en) * | 2018-04-24 | 2018-10-19 | 云谷（固安）科技有限公司 | Minority carrier life time detection device and detection method |
| CN108680850B (en) * | 2018-04-24 | 2020-07-14 | 云谷（固安）科技有限公司 | Minority carrier lifetime detection device and detection method |
| CN114361265A (en) * | 2021-12-22 | 2022-04-15 | 天津爱旭太阳能科技有限公司 | Antireflection layer of PERC (Positive electrode collector) battery, manufacturing method of antireflection layer and battery |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 69, C District, Leping Town Industrial Park, Sanshui, Foshan, Guangdong Patentee after: Guangdong Asahi Polytron Technologies Inc Address before: 528137 Qi Li No. 69, C District, Sanshui Industrial Park, Leping Town, Foshan City, Guangdong Patentee before: Guangdong Aiko Solar Energy Technology Co., Ltd. |
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| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130123 |
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| CX01 | Expiry of patent term |