CN1949545A - New structure crystal silicon solar energy battery - Google Patents
New structure crystal silicon solar energy battery Download PDFInfo
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- CN1949545A CN1949545A CN 200610153054 CN200610153054A CN1949545A CN 1949545 A CN1949545 A CN 1949545A CN 200610153054 CN200610153054 CN 200610153054 CN 200610153054 A CN200610153054 A CN 200610153054A CN 1949545 A CN1949545 A CN 1949545A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention is a crystalline silicon solar battery adopting emission region on film silicon back, belonging to a new structured photovolt battery, and its key point is depositing a layer of silicon film on the back to form heterogeneous PN junction on an N-type monocrystalline silicon substrate so as to replace the homogenous PN junction on the right side of a battery, prepared by routine diffusion, where the deposited silicon film can noncrystalline, microstalline, or nanocrystalline film; the heterogenerous PN junction forming method can directly deposit a P-type silicon film on the N-type monocrystalline silicon, and can firstly deposit a layer of intrinsic silicon film on the N-type monocrystalline silicon and then deposit the P-type silicon film. Thus, the battery efficiency can reach above 20%.
Description
One, technical field
What the present invention relates to is a kind of new construction of solar cell, belongs to the Application of Solar Energy field.
Two, background technology
Crystal silicon solar energy battery is in occupation of the share of photovoltaic market, the world more than 90%.This battery generally adopts P type crystalline silicon, forms N type emitter region by High temperature diffusion, belongs to the PN homojunction solar cell.But the shortcoming of this battery is: High temperature diffusion may make silicon materials produce more defects, and in the pyroprocess if there is pollution then can greatly reduce the efficient of battery, therefore higher requirement has been proposed all for material and production environment.In addition, the back of the body surface of this battery does not have effective passivation, does not have effective light trapping structure yet, thereby carries on the back the compound more serious of surface, and some light has penetrated the battery active region and has not been absorbed.These all are the reasons that the conventional solar battery efficiency of restriction improves.
In recent years, Japanese Sanyo company has developed a kind of amorphous silicon/crystalline silicon heterojunction solar cell (HIT battery).This battery adopts the n type single crystal silicon sheet, at the silicon chip surface deposition of amorphous silicon films.Wherein the emitter region is a P type amorphous silicon membrane, is deposited on the front of silicon chip.The Facad structure of battery is: metal grid lines/transparent conductive film (TCO)/P type amorphous silicon/intrinsic amorphous silicon/monocrystalline silicon piece.This structure has made full use of the effect of amorphous silicon good surface passivation, and the battery efficiency of preparation reaches more than 20%.
Adopt the advantage of N type silicon to be: the minority carrier lifetime of N type silicon chip is generally longer, than being easier to obtain high-quality silicon chip.N type silicon is also strong than P type silicon to the tolerance degree of impurity.For solar cell, P type silion cell efficient decay to a certain degree can occur after long-time illumination, and this decay is relevant with the boron-oxygen defect in the material.After adopting N type silicon, this problem no longer exists.
Adopt the advantage of amorphous silicon emitter region to be: amorphous silicon has the good surface passivation effect.And depositing temperature low (200 ℃), technology are fairly simple, have avoided pyroprocess, have reduced the battery manufacturing cost.
Yet also there is weakness in the HIT battery.Because the amorphous silicon emitter region is at front surface, the thickness of amorphous silicon membrane is restricted (generally at 20 μ m), if then incident light loss increase of thickness increase.But, it is generally acknowledged that noncrystal membrane could obtain good surface passivation effect more than will reaching 50 μ m.If the amorphous emitter region is thin excessively, even the situation that the emitter region charge carrier exhausts fully can occur, battery efficiency is descended.In addition, because battery front side must adopt transparent conductive film, also can bring the light loss (transmitance of general transparent conductive film is up to 90%) about 10%.
Problem at conventional homojunction battery and the existence of HIT battery the present invention proposes a kind of new battery structure: the crystal silicon solar energy battery that adopts thin film silicon back of the body surface emitting district.This solar cell adopts amorphous silicon (also can be microcrystal silicon or nano-silicon) heterojunction emitter region, and the emitter region is deposited on silicon chip back.Compare with the HIT battery, the light loss that this battery has at first avoided front amorphous silicon layer and transparent conductive film to bring, only this just can make battery efficiency improve more than 10%.Membrane silicon layer thickness is unrestricted in addition, and better surface passivation can be provided.Thin film silicon/the metal structure on battery back of the body surface can also provide good sunken light action.
The battery of this new construction to having relatively high expectations of minority carrier lifetime, therefore must use high-quality crystalline silicon material because PN junction has been placed on cell backside.But the raising of battery efficiency, the simplification of technology can remedy the adverse effect that material cost rises and brings.
Three, summary of the invention
The objective of the invention is to overcome the shortcoming of existing battery structure, obtain a kind of conversion efficiency height, manufacture craft is simply carried on the back surface emitting district crystal silicon solar energy battery.
The present invention is achieved by the following technical solutions.Form emitter region (one deck intrinsic silicon film can be deposited earlier at the n type single crystal silicon back side deposit P type silicon thin film again, also can on n type single crystal silicon, directly deposit P type silicon thin film) at n type single crystal silicon backside deposition one deck silicon thin film.Silicon thin film can prepare with any deposition process, and silicon thin film can be amorphous silicon, microcrystal silicon or Nano silicon-crystal thin film.Compare with conventional homojunction P type crystal silicon solar energy battery, adopt this structure not only effectively to avoid the influence of boron-oxygen defect in the P type battery, also carried out passivation to carrying on the back the surface effectively.In addition, the metal electrode layer on back of the body surface can strengthen the absorptivity of battery to light with in the light that penetrates battery reflected back cell body again.Compare with external amorphous silicon/crystalline silicon heterojunction solar cell (HIT battery), the emitter region of this structure is at cell backside, front surface no longer needs nesa coating to come collected current, can avoid front silicon thin film and transparent conductive film to the absorption of incident solar energy and the loss in efficiency that causes.Adopt the battery structure among the present invention, battery efficiency can reach more than 20%.
Four, description of drawings
Accompanying drawing is this kind novel solar battery structural representation.Among the figure: (1) back electrode; (2) silicon thin film of sedimentation preparation; (3) N type crystalline silicon; (4) highly doped N
+Layer; (5) antireflection layer; (6) positive electrode.
Five, embodiment
Technical scheme: adopt high-quality n type single crystal silicon sheet (3), thickness is below 300 μ m, and resistivity is at 5-500 Ω cm.After adopting standard industry technology clean surface and texturing, earlier at the highly doped N of front surface diffusion one deck
+Layer (4), sheet resistance is 100-300 Ω/ (effect of this layer is the variation passivation battery front surface that utilizes doping content, provides good Ohmic contact for the front surface electrode simultaneously).At N
+The film (5) that deposition or growth have anti-reflective effect on the layer, for example SiN or SiO
2Deng, thickness is at 70-120nm.At n type single crystal silicon sheet (3) backside deposition silicon thin film (2), for example amorphous silicon or microcrystal silicon, nanocrystal silicon, thickness is at 20-200nm.Go up preparation positive electrode (6) at anti-reflection layer (5) at last, on silicon thin film, prepare negative electrode (1).
The technological means that the present invention adopts is to realize the emitter region at cell backside by the depositing silicon film.Compare the conversion efficiency decay that N type silicon can be reduced in the generation of boron-oxygen defect under the illumination effectively and therefore cause with the P type silicon chip diffusion N type emitter region of adopting in present most factories.In addition, PN junction adopts the low temperature deposition method preparation, has avoided conventional 800～1000 ℃ diffusion process, thereby such pyroprocess can make silicon materials generation more defects or contamination influence the raising of battery efficiency.In addition, at the silicon thin film of silicon chip backside deposition,, thereby improve battery efficiency no matter be that amorphous silicon, microcrystal silicon or nanocrystal silicon all can play the passivation to the back side.At least can have one side to do matte (texturing) on the front surface of this structure or back of the body surface and handle and reduce the light reflection and improve and fall into luminous effect, this is helpful to improving the cell photoelectric conversion efficiency.Can prepare the photoelectric conversion efficiency that one deck antireflective coating further improves battery on the matte.
Claims (6)
1. a heterojunction solar battery is characterized in that the back side of emitter region at battery, forms PN heterojunction simultaneously.
2. solar cell as claimed in claim 1, its structure are the N type crystalline silicon/silicon thin film/back electrode of positive electrode/anti-reflection layer/surface-texturing.
3. solar cell as claimed in claim 1 is characterized in that the emitter region is at cell backside.
4. solar cell as claimed in claim 1 is characterized in that PN heterojunction.
5. solar cell as claimed in claim 3, the structure of its PN heterojunction can be N type crystalline silicon/P type silicon thin films, also can be N type crystalline silicon/intrinsic silicon film/P type silicon thin films.
6. solar cell as claimed in claim 4, its silicon thin film can be amorphous silicon membrane, microcrystalline silicon film or Nano silicon-crystal thin film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200610153054 CN1949545A (en) | 2006-09-21 | 2006-09-21 | New structure crystal silicon solar energy battery |
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| CN 200610153054 CN1949545A (en) | 2006-09-21 | 2006-09-21 | New structure crystal silicon solar energy battery |
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| CN1949545A true CN1949545A (en) | 2007-04-18 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008098407A1 (en) * | 2007-02-08 | 2008-08-21 | Suntech Power Co., Ltd | Hybrid silicon solar cells and method of fabricating same |
| CN101866973A (en) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | Thin film silicon/crystalline silicon heterogenous pn junction structure for solar cell |
| CN101976710A (en) * | 2010-10-15 | 2011-02-16 | 上海交通大学 | Method for preparing crystalline silicon hetero-junction solar cell based on hydrogenated microcrystalline silicon film |
| CN102376822A (en) * | 2010-08-06 | 2012-03-14 | Q-电池公司 | Method of making a semiconductor device having a passivation layer and corresponding semiconductor device |
| CN104282777A (en) * | 2013-07-09 | 2015-01-14 | 新日光能源科技股份有限公司 | Crystalline silicon solar cell with doped silicon carbide layer and manufacturing method thereof |
| CN105810771A (en) * | 2016-05-12 | 2016-07-27 | 南昌大学 | Back crystal silicon heterojunction two-sided solar cell and preparation method therefor |
| CN106057982A (en) * | 2016-08-08 | 2016-10-26 | 广东爱康太阳能科技有限公司 | Manufacturing method of low-surface-concentration assembled p-n junction crystalline silicon solar cell |
| CN108538952A (en) * | 2018-05-18 | 2018-09-14 | 东方环晟光伏（江苏）有限公司 | Crystalline silicon high performance solar batteries structure and preparation method thereof |
-
2006
- 2006-09-21 CN CN 200610153054 patent/CN1949545A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008098407A1 (en) * | 2007-02-08 | 2008-08-21 | Suntech Power Co., Ltd | Hybrid silicon solar cells and method of fabricating same |
| CN101632180B (en) * | 2007-02-08 | 2012-03-28 | 无锡尚德太阳能电力有限公司 | Hybrid silicon solar cells and method of fabricating same |
| CN101866973A (en) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | Thin film silicon/crystalline silicon heterogenous pn junction structure for solar cell |
| CN102376822A (en) * | 2010-08-06 | 2012-03-14 | Q-电池公司 | Method of making a semiconductor device having a passivation layer and corresponding semiconductor device |
| CN102376822B (en) * | 2010-08-06 | 2016-04-06 | Q-电池公司 | The manufacturing process of semiconductor device and semiconductor device |
| CN101976710A (en) * | 2010-10-15 | 2011-02-16 | 上海交通大学 | Method for preparing crystalline silicon hetero-junction solar cell based on hydrogenated microcrystalline silicon film |
| CN104282777A (en) * | 2013-07-09 | 2015-01-14 | 新日光能源科技股份有限公司 | Crystalline silicon solar cell with doped silicon carbide layer and manufacturing method thereof |
| CN105810771A (en) * | 2016-05-12 | 2016-07-27 | 南昌大学 | Back crystal silicon heterojunction two-sided solar cell and preparation method therefor |
| CN106057982A (en) * | 2016-08-08 | 2016-10-26 | 广东爱康太阳能科技有限公司 | Manufacturing method of low-surface-concentration assembled p-n junction crystalline silicon solar cell |
| CN106057982B (en) * | 2016-08-08 | 2018-02-27 | 广东爱旭科技股份有限公司 | The preparation method of p n crystalline solid silicon solar cells can be assembled in a kind of low surface concentration |
| CN108538952A (en) * | 2018-05-18 | 2018-09-14 | 东方环晟光伏（江苏）有限公司 | Crystalline silicon high performance solar batteries structure and preparation method thereof |
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