CN101866973A - Thin film silicon/crystalline silicon heterogenous pn junction structure for solar cell - Google Patents
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Abstract
The invention discloses a thin film silicon/crystalline silicon heterogenous pn junction structure for a solar cell, which is characterized in that a layer of intrinsic noncrystalline silicon germanium layer is inserted between thin film silicon layer and a crystalline silicon layer of a heterogenous pn junction formed by the thin film silicon layer and the crystalline silicon layer, which have opposite doping types, as a passivated layer of the interface of the heterogenous junction. The intrinsic noncrystalline silicon germanium layer is composed of a single component or gradually changing components. Compared with the thin film silicon/crystalline silicon heterogenous pn junction using an intrinsic noncrystalline silicon layer as a heterogenous junction interface passivated layer of the conventional tin film silicon/crystalline silicon heterogenous junction solar cell, the thin film silicon/crystalline silicon heterogenous pn junction has the advantages of reducing the energy band misalignment at the interface of the thin film silicon/crystalline silicon heterogenous junction and improving the transport property of charge carriers. Therefore, the thin film silicon/crystalline silicon heterogenous pn junction improves the performance of the solar cell, particularly the performance of a filling factor.
Description
Technical field
The present invention relates to a kind of thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell, particularly a kind of thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell that utilizes the intrinsic amorphous silicon germanium layer to do thin film silicon/crystalline silicon heterogenous pn junction interface passivation layer.
Background technology
Thin film silicon/crystalline silicon heterojunction solar battery is a kind of high-efficiency crystal silicon solar cell that can adopt low-cost realization.This solar cell utilizes the doping film silicon layer to make the pn knot on crystalline silicon substrate.This layer film silicon layer has only tens nanometer thickness usually, and can using plasma assistant chemical vapor deposition (PECVD) technology finish in deposit below 200 ℃, therefore, than traditional solar cell by diffusion preparation pn knot, the energy requirement less investment of thin film silicon/crystalline silicon heterojunction solar battery institute, technology is also simple relatively, thereby preparation cost is low.
But the performance of thin film silicon/crystalline silicon heterojunction solar battery is subjected to having a strong impact on of thin film silicon/crystalline silicon heterojunction interface.Interfacial state can constitute the complex centre of charge carrier, and interface state density is too high, the solar cell decreased performance.In order to reduce interfacial state, Japan Sanyo company has developed HIT (Heterojunction with Intrinsic Thin Layer) solar cell (U.S. Patent application 20020069911A1), utilize amorphous silicon layer that surface of crystalline silicon is carried out passivation, thereby improved battery performance.Yet, because what existence was bigger between amorphous silicon and the crystalline silicon can be with mismatch, can can hinder transporting of charge carrier with step what the amorphous silicon/crystalline silicon heterojunction existed at the interface, make in the HIT solar cell, charge carrier has only by tunnelling just can transport these heterojunction boundaries, this just causes restriction to the performance of solar cell, and particularly the fill factor, curve factor of HIT solar cell is low, has only 78-79% usually.2009, Sanyo company obtained 23% conversion efficiency, created the world record of HIT solar cell, but fill factor, curve factor also had only 80%.And PERL (the passivated emitter of the new southern Weir of Australia ± present world peak efficiency 25% that university creates, rear locally diffused, passivation emitter, back side local diffusion) crystal-silicon solar cell of structure, fill factor, curve factor is up to 82.8%.So, need find the method at better passivation film silicon/crystalline silicon heterojunction interface, improve the fill factor, curve factor of corresponding solar cell.In U.S. Patent application 20090308453-A1, a kind of metal semiconductor (MS) contacting structure of improving between crystalline silicon substrate and the metal back electrode is disclosed, between crystalline silicon substrate and metal back electrode, insert one deck intrinsic or the doped amorphous silicon germanium layer, obtained better effects.
Summary of the invention
The objective of the invention is in order to improve the carrier transport performance of thin film silicon/crystalline silicon heterojunction solar battery, particularly fill factor, curve factor provides a kind of employing intrinsic amorphous silicon germanium layer that is used for solar cell to do the thin film silicon/crystalline silicon heterogenous pn junction structure of thin film silicon/crystalline silicon heterogenous pn junction interface passivation layer.Do the thin film silicon/crystalline silicon heterogenous pn junction of passivation layer compares with the employing intrinsic amorphous silicon layer in the existing HIT solar cell, difference in band gap between amorphous silicon germanium layer and the crystalline silicon is little, what can reduce that the thin film silicon/crystalline silicon heterogenous pn junction exists at the interface can be with mismatch, improve carrier transport, thereby improve solar cell performance, particularly fill factor, curve factor.
The thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell of the present invention, it is characterized in that, between the membrane silicon layer of the heterogenous pn junction that the membrane silicon layer opposite by doping type and crystal silicon layer constitute and crystal silicon layer, insert one deck intrinsic amorphous silicon germanium layer.Described intrinsic amorphous silicon germanium layer is an one-component, also can be content gradually variational, and promptly germanium constituent content wherein is stepping, and the mode of variation is that the germanium constituent content progressively reduces toward the interface that contacts with thin film silicon from the interface that contacts with crystalline silicon.This gradual change can be linear, step or other any nonlinear way.In structure of the present invention, what described intrinsic amorphous silicon germanium layer was used for improving is two kinds of semi-conducting materials: the carrier transport characteristic at the heterogenous pn junction interface between thin film silicon and the crystalline silicon, these are obviously different with the MS structure described in the aforesaid U.S. Patent application 20090308453-A1.
By implementing the present invention, can reduce the obstruction of thin film silicon/crystalline silicon heterogenous pn junction interface to carrier transport, with structure applications of the present invention to solar cell, can the better thin film silicon/crystalline silicon heterojunction solar battery of obtained performance.
Description of drawings
Fig. 1 thin film silicon/crystalline silicon heterogenous pn junction structure schematic diagram that is used for solar cell of the present invention;
Solar battery structure schematic diagram among Fig. 2 embodiment 1;
Solar battery structure schematic diagram among Fig. 3 embodiment 2;
Solar battery structure schematic diagram among Fig. 4 embodiment 3;
Solar battery structure schematic diagram among Fig. 5 embodiment 4.
Among the figure: 1 intrinsic amorphous silicon germanium layer, 2 crystal silicon layers, 3 membrane silicon layer, 4 transparency conductive electrodes, 5 metal grid lines, 6 metal electrodes, 7 back of the body fields.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
As shown in Figure 1, the thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell of the present invention, it is characterized in that, between opposite membrane silicon layer of the doping type of described thin film silicon/crystalline silicon heterojunction (3) and crystal silicon layer (2), contain one deck intrinsic amorphous silicon germanium layer (1).
Described intrinsic amorphous silicon germanium layer (1) can be an one-component, it also can be content gradually variational, promptly germanium constituent content wherein is stepping, and the mode of variation is that the germanium constituent content progressively reduces toward the interface that contacts with thin film silicon from the interface that contacts with crystalline silicon.This gradual change can be linear, step or other any nonlinear way.
By implementing the present invention, what can reduce that the thin film silicon/crystalline silicon heterogenous pn junction exists at the interface can be with mismatch, improves carrier transport, with structure applications of the present invention to thin film silicon/crystalline silicon heterojunction solar battery, can improve the performance of described solar cell, particularly fill factor, curve factor.
As shown in Figure 2, a kind of solar cell of using thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention, its structure is metal grid lines (5) for beginning from the solar cell side to light, below the metal grid lines (5) transparency conductive electrode (4), below the transparency conductive electrode (4) membrane silicon layer (3), being intrinsic amorphous silicon germanium layer (1) below the membrane silicon layer (3), is crystal silicon layer (2) below the intrinsic amorphous silicon germanium layer (1), is metal electrode (6) below the crystal silicon layer (2).Wherein, described intrinsic amorphous silicon germanium layer (1) is an one-component, and described membrane silicon layer (3) and crystal silicon layer (2) are that doping type is opposite.In this solar cell, by described membrane silicon layer (3), intrinsic amorphous silicon germanium layer (1) and crystal silicon layer (2) constitute thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention.
As shown in Figure 3, a kind of solar cell of using thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention, its structure is metal grid lines (5) for beginning from the solar cell side to light, below the metal grid lines (5) transparency conductive electrode (4), below the transparency conductive electrode (4) membrane silicon layer (3), it below the membrane silicon layer (3) intrinsic amorphous silicon germanium layer (1), below the intrinsic amorphous silicon germanium layer (1) crystal silicon layer (2), be the back of the body (7) below the crystal silicon layer (2), the back of the body is metal electrode (6) below (7).Wherein, the germanium component of described intrinsic amorphous silicon germanium layer (1) is a linear gradient, and the germanium constituent content progressively reduces toward interface one side that contacts with thin film silicon from interface one side that contacts with crystalline silicon, and described membrane silicon layer (3) and crystal silicon layer (2) are that doping type is opposite.In this solar cell, by described membrane silicon layer (3), intrinsic amorphous silicon germanium layer (1) and crystal silicon layer (2) constitute thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention.
As shown in Figure 4, a kind of solar cell of using thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention, its structure is metal grid lines (5) for beginning from the solar cell side to light, below the metal grid lines (5) transparency conductive electrode (4), below the transparency conductive electrode (4) membrane silicon layer (3), it below the membrane silicon layer (3) intrinsic amorphous silicon germanium layer (1), below the intrinsic amorphous silicon germanium layer (1) crystal silicon layer (2), be the back of the body (7) below the crystal silicon layer (2), the back of the body is metal electrode (6) below (7).Wherein, the germanium component of described intrinsic amorphous silicon germanium layer (1) is the step gradual change, and the germanium constituent content progressively reduces toward interface one side that contacts with thin film silicon from interface one side that contacts with crystalline silicon, and described membrane silicon layer (3) and crystal silicon layer (2) are that doping type is opposite.In this solar cell, by described membrane silicon layer (3), intrinsic amorphous silicon germanium layer (1) and crystal silicon layer (2) constitute thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention.
As shown in Figure 5, a kind of solar cell of using thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention, its structure is metal electrode (6) for beginning from the solar cell side to light, below the metal electrode (6) back of the body (7), the back of the body is crystal silicon layer (2) below (7), it below the crystal silicon layer (2) intrinsic amorphous silicon germanium layer (1), below the intrinsic amorphous silicon germanium layer (1) membrane silicon layer (3), being transparency conductive electrode (4) below the membrane silicon layer (3), is metal grid lines (5) below the transparency conductive electrode (4).Wherein, the germanium component of described intrinsic amorphous silicon germanium layer (1) is non-linear gradient, and the germanium constituent content progressively reduces toward interface one side that contacts with thin film silicon from interface one side that contacts with crystalline silicon, and described membrane silicon layer (3) and crystal silicon layer (2) are that doping type is opposite.In this solar cell, by described membrane silicon layer (3), intrinsic amorphous silicon germanium layer (1) and crystal silicon layer (2) constitute thin film silicon/crystalline silicon heterogenous pn junction structure of the present invention.
Claims (4)
1. thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell, it is characterized in that, between the membrane silicon layer of the heterogenous pn junction that the membrane silicon layer opposite by doping type and crystal silicon layer constitute and crystal silicon layer, contain the passivation layer that one deck intrinsic amorphous silicon germanium layer is done heterojunction boundary.
2. the thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell according to claim 1 is characterized in that described intrinsic amorphous silicon germanium layer is an one-component.
3. the thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell according to claim 1, it is characterized in that the germanium constituent content in the described intrinsic amorphous silicon germanium layer progressively reduces toward interface one side that contacts with thin film silicon from interface one side that contacts with crystalline silicon.
4. the thin film silicon/crystalline silicon heterogenous pn junction structure that is used for solar cell according to claim 3 is characterized in that, the component of described intrinsic amorphous silicon germanium layer is linear gradient or step gradual change or non-linear gradual change.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386253A (en) * | 2011-11-02 | 2012-03-21 | 北京汇天能光电技术有限公司 | Interface treatment technology for hetero junction solar cell |
| CN102738291A (en) * | 2012-07-07 | 2012-10-17 | 蚌埠玻璃工业设计研究院 | Silicon-based heterojunction double-side solar cell and preparation method thereof |
| CN105244411A (en) * | 2015-08-27 | 2016-01-13 | 陕西师范大学 | Silicon-based solar cell and monocrystalline silicon piece passivation method thereof |
| CN106024964A (en) * | 2016-07-13 | 2016-10-12 | 北京工业大学 | N-type back junction double-sided solar cell manufacturing method |
| CN106653928A (en) * | 2016-11-30 | 2017-05-10 | 上海电机学院 | Novel heterojunction solar cell structure and manufacturing method therefor |
| CN106784146A (en) * | 2016-12-26 | 2017-05-31 | 济南大学 | A kind of methylamine lead iodine/gap tunable amorphous silicon germanium stacked thin film batteries package technique |
| CN116111078A (en) * | 2023-04-12 | 2023-05-12 | 贝特瑞新材料集团股份有限公司 | Negative electrode material, preparation method thereof and lithium ion battery |
| CN117577697A (en) * | 2024-01-16 | 2024-02-20 | 金阳(泉州)新能源科技有限公司 | Back contact battery with specific front passivation structure and preparation method and application thereof |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102386253A (en) * | 2011-11-02 | 2012-03-21 | 北京汇天能光电技术有限公司 | Interface treatment technology for hetero junction solar cell |
| CN102738291A (en) * | 2012-07-07 | 2012-10-17 | 蚌埠玻璃工业设计研究院 | Silicon-based heterojunction double-side solar cell and preparation method thereof |
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| CN105244411A (en) * | 2015-08-27 | 2016-01-13 | 陕西师范大学 | Silicon-based solar cell and monocrystalline silicon piece passivation method thereof |
| CN106024964A (en) * | 2016-07-13 | 2016-10-12 | 北京工业大学 | N-type back junction double-sided solar cell manufacturing method |
| CN106024964B (en) * | 2016-07-13 | 2017-09-22 | 北京工业大学 | A kind of preparation method of n-type back of the body knot double-side solar cell |
| CN106653928A (en) * | 2016-11-30 | 2017-05-10 | 上海电机学院 | Novel heterojunction solar cell structure and manufacturing method therefor |
| CN106784146A (en) * | 2016-12-26 | 2017-05-31 | 济南大学 | A kind of methylamine lead iodine/gap tunable amorphous silicon germanium stacked thin film batteries package technique |
| CN116111078A (en) * | 2023-04-12 | 2023-05-12 | 贝特瑞新材料集团股份有限公司 | Negative electrode material, preparation method thereof and lithium ion battery |
| CN116111078B (en) * | 2023-04-12 | 2023-11-10 | 贝特瑞新材料集团股份有限公司 | Negative electrode material, preparation method thereof and lithium ion battery |
| CN117577697A (en) * | 2024-01-16 | 2024-02-20 | 金阳(泉州)新能源科技有限公司 | Back contact battery with specific front passivation structure and preparation method and application thereof |
| CN117577697B (en) * | 2024-01-16 | 2024-05-03 | 金阳(泉州)新能源科技有限公司 | Back contact battery with specific front passivation structure and preparation method and application thereof |
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Application publication date: 20101020 |