CN109638101A - The emitter structure and preparation method thereof of the double-deck amorphous silicon doped layer solar cell - Google Patents
The emitter structure and preparation method thereof of the double-deck amorphous silicon doped layer solar cell Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 92
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 170
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
A kind of emitter structure and preparation method thereof of double-deck amorphous silicon doped layer solar cell of the present invention, it includes N-type crystalline silicon piece, the front and back of the N-type crystalline silicon piece is equipped with amorphous silicon intrinsic layer, TCO conductive film is equipped on the outside of amorphous silicon intrinsic layer, the outside of the TCO conductive film is equipped with several Ag electrodes, the different amorphous silicon doped layer of two layers of doping concentration is equipped between the amorphous silicon intrinsic layer and TCO conductive film at the back side, that is first layer doped layer and second layer doped layer, the first layer doped layer is positioned close to the side of amorphous silicon intrinsic, the second layer doped layer is positioned close to the side of TCO conductive film.Shady face amorphous silicon doped layer of the present invention is using the double-deck amorphous silicon doped layer, first layer uses the doping concentration of 0.5%-1%, and the second layer uses the doping concentration of 1%-4%, both increased the electric conductivity of film, it does not reduce the transmitance of film again, promotes the photoelectric conversion efficiency of HJT solar battery.
Description
Technical field
The present invention relates to photovoltaic high-efficiency battery technical field more particularly to a kind of double-deck amorphous silicon doped layer solar cells
Emitter structure and preparation method thereof.
Background technique
With the fast development of photovoltaic technology, the transfer efficiency of crystal-silicon solar cell improves year by year.In current photovoltaic work
Industry, the transfer efficiency of single crystal silicon solar cell have reached 20% or more, and the transfer efficiency of polycrystalline silicon solar cell is up to 18.5%
More than.However the back of the silica-based solar cell of large-scale production, transfer efficiency up to 22.5% or more only U.S. SunPower company
Contact the amorphous with intrinsic sheet of solar cell (Interdigitated Back Contact, IBC) and Matsushita Corporation of Japan
Silicon/crystalline silicon heterojunction solar battery (Hetero-junction with Intrinsic Thin layer, HJT).And IBC
Solar cell is compared, and HJT battery has many advantages, such as less energy consumption, process flow are simple, temperature coefficient is small, these are also HJT
The reason of solar battery can show one's talent from numerous efficient silica-based solar cell schemes.
Currently, China is wideling popularize distributed solar energy photovoltaic power generation, since Roof Resources are limited, and also it is distributed
The solar module of photovoltaic power generation demand high conversion efficiency has efficient, generating electricity on two sides excellent just because of HJT solar cell
Gesture shows wide application prospect in photovoltaic power station.
The structure of existing HJT battery is to do one layer of amorphous silicon intrinsic layer and doped layer n type single crystal silicon is two-sided.Amorphous silicon sheet
It levies layer and is mainly passivated surface of crystalline silicon defect, surface defect state is reduced, to reduce Carrier recombination；Amorphous silicon doped layer master
If forming PN junction and field-effect passivation layer with crystal silicon.
Referring to Fig. 1, the prior art is single layer amorphous silicon doped layer P, and wherein the doping ratio of B2H6 doping is 1%-3%；It is non-
Doped polycrystal silicon layer is there are the relationship that transmitance is contradicted with conductivity, and then electric conductivity is poor for transmitance height, and electric conductivity height then penetrates
Rate is low, and therefore, single layer B2H6 doped amorphous silicon cannot achieve the high conversion efficiency of HJT battery.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of emitters of double-deck amorphous silicon doped layer solar cell
Structure and preparation method thereof, had not only been able to satisfy the satisfactory electrical conductivity of amorphous silicon, but also was able to satisfy high transmittance.
The object of the present invention is achieved like this:
A kind of emitter structure of bilayer amorphous silicon doped layer solar cell, it includes N-type crystalline silicon piece, the N-type crystalline silicon
The front and back of piece is equipped with amorphous silicon intrinsic layer, and TCO conduction is equipped on the outside of the amorphous silicon intrinsic layer of front and back
The outside of film, the TCO conductive film is equipped with several Ag electrodes, the amorphous silicon intrinsic layer and TCO at the back side of the N-type crystalline silicon piece
The different amorphous silicon doped layer of two layers of doping concentration, i.e. first layer doped layer and second layer doped layer, institute are equipped between conductive film
The side that first layer doped layer is positioned close to amorphous silicon intrinsic layer is stated, the second layer doped layer is positioned close to TCO conduction
The side of film.
A kind of emitter structure of bilayer amorphous silicon doped layer solar cell, the first layer doped layer with a thickness of 1 ~
20nm, doping concentration are 0.5% ~ 1%.
A kind of emitter structure of bilayer amorphous silicon doped layer solar cell, the second layer doped layer with a thickness of 1 ~
20nm, doping concentration are 1% ~ 4%.
A kind of preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell, including the following steps:
The first step chooses substrate n type single crystal silicon piece progress making herbs into wool, cleaning treatment；
Second step, double intrinsic amorphous silicon layers that the positive back side is prepared by PECVD；
Third step, selection N-type amorphous silicon film are light-receiving surface doped layer；
4th step, using plasma enhanced chemical vapor deposition prepare N-type non-crystalline silicon layer, i.e., amorphous silicon doped layer N layers；
5th step prepares P-type non-crystalline silicon layer using PECVD, and first layer forms the first doping using 0.5% ~ 1% doping concentration
Layer, the second layer form the second doped layer using 1% ~ 4% doping concentration；
6th step deposits TCO conductive film using RPD PVD method；
7th step forms positive back side Ag electrode by silk-screen printing；
8th step, solidification are so that form good Ohmic contact between silver grating line and TCO conductive film；
9th step, the electrical property for carrying out test battery.
A kind of preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell, the thickness of first doped layer
Degree is 1 ~ 20nm, second doped layer with a thickness of 1 ~ 20nm, the overall thickness of two layers of amorphous silicon doped layer is 7 ~ 15nm.
A kind of preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell, the amorphous silicon at the positive back side
Intrinsic layer thickness is 5 ~ 10nm.
A kind of preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell, the amorphous silicon doped layer N
Layer is with a thickness of 4 ~ 8nm.
A kind of preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell, the TCO conduction film thickness
For 70 ~ 110nm.
Compared with prior art, the beneficial effects of the present invention are:
For the present invention for HJT heterojunction solar battery structure, shady face amorphous silicon doped layer uses the double-deck amorphous silicon doped layer,
First layer uses the doping concentration of 0.5%-1%, and the second layer uses the doping concentration of 1%-4%, not only increased the electric conductivity of film, but also
The transmitance of film is not reduced, promotes the photoelectric conversion efficiency of HJT solar battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing HJT heterojunction solar battery.
Fig. 2 is the structural schematic diagram of HJT heterojunction solar battery of the present invention.
Wherein:
N-type crystalline silicon piece 1, amorphous silicon intrinsic layer 2, amorphous silicon doped layer N layer 3, amorphous silicon doped layer P layer 4, first layer doped layer
5, second layer doped layer 6, TCO conductive film 7, Ag electrode 8.
Specific embodiment
Embodiment 1:
Referring to fig. 2, the emitter structure of a kind of double-deck amorphous silicon doped layer solar cell of the present invention, it includes N-type crystalline substance
The front and back of body silicon wafer 1, the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with amorphous silicon doped layer N layer 3, the positive amorphous silicon doped layer N
The outside of layer 3 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8；
The outside of the amorphous silicon intrinsic layer 2 at the back side is equipped with first layer doped layer 5, and the outside of the first layer doped layer 5 is set
There is second layer doped layer 6, the outside of the second layer doped layer 6 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is set
There are several Ag electrodes 8.
The first layer doped layer 5 with a thickness of 4nm, doping concentration 1%；The second layer doped layer 6 with a thickness of
6nm, doping concentration 3%.
A kind of preparation method of the emitter structure of double-deck amorphous silicon doped layer solar cell of the present invention, including with
Under several steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side is with a thickness of 8nm；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-type non-crystalline silicon layer, i.e. amorphous silicon doped layer N layer 3 are prepared using plasma enhanced chemical vapor deposition, with a thickness of
6nm；
(5) P-type non-crystalline silicon layer, 10 nm of overall thickness are prepared using PECVD, first layer forms first using 1% doping concentration and mixes
Diamicton 5, first doped layer 5 with a thickness of 4nm, the second layer forms the second doped layer 6 using 3% doping concentration, described the
Two doped layers 6 with a thickness of 6nm；
(6) TCO conductive film 7 is deposited using RPD PVD method, with a thickness of 100nm；
(7) positive back side Ag electrode 8 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(9) electrical property of test battery is carried out.
Embodiment 2:
Referring to fig. 2, the emitter structure of a kind of double-deck amorphous silicon doped layer solar cell of the present invention, it includes N-type crystalline substance
The front and back of body silicon wafer 1, the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with amorphous silicon doped layer N layer 3, the positive amorphous silicon doped layer N
The outside of layer 3 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8；
The outside of the amorphous silicon intrinsic layer 2 at the back side is equipped with first layer doped layer 5, and the outside of the first layer doped layer 5 is set
There is second layer doped layer 6, the outside of the second layer doped layer 6 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is set
There are several Ag electrodes 8.
The first layer doped layer 5 with a thickness of 3nm, doping concentration 0.5%；The second layer doped layer 6 with a thickness of
7nm, doping concentration 2.5%.
A kind of preparation method of the emitter structure of double-deck amorphous silicon doped layer solar cell of the present invention, including with
Under several steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side is with a thickness of 8nm；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-type non-crystalline silicon layer, i.e. amorphous silicon doped layer N layer 3 are prepared using plasma enhanced chemical vapor deposition, with a thickness of
6nm；
(5) P-type non-crystalline silicon layer, 10 nm of overall thickness are prepared using PECVD, first layer forms first using 0.5% doping concentration
Doped layer 5, first doped layer 5 with a thickness of 3nm, the second layer forms the second doped layer 6, institute using 2.5% doping concentration
State the second doped layer 6 with a thickness of 7nm；
(6) TCO conductive film 7 is deposited using RPD PVD method, with a thickness of 100nm；
(7) positive back side Ag electrode 8 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(9) electrical property of test battery is carried out.
Embodiment 3:
Referring to fig. 2, the emitter structure of a kind of double-deck amorphous silicon doped layer solar cell of the present invention, it includes N-type crystalline substance
The front and back of body silicon wafer 1, the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with amorphous silicon doped layer N layer 3, the positive amorphous silicon doped layer N
The outside of layer 3 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8；
The outside of the amorphous silicon intrinsic layer 2 at the back side is equipped with first layer doped layer 5, and the outside of the first layer doped layer 5 is set
There is second layer doped layer 6, the outside of the second layer doped layer 6 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is set
There are several Ag electrodes 8.
The first layer doped layer 5 with a thickness of 5nm, doping concentration 1%；The second layer doped layer 6 with a thickness of
5nm, doping concentration 2%.
A kind of preparation method of the emitter structure of double-deck amorphous silicon doped layer solar cell of the present invention, including with
Under several steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side is with a thickness of 8nm；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-type non-crystalline silicon layer, i.e. amorphous silicon doped layer N layer 3 are prepared using plasma enhanced chemical vapor deposition, with a thickness of
6nm；
(5) P-type non-crystalline silicon layer, 10 nm of overall thickness are prepared using PECVD, first layer forms first using 1% doping concentration and mixes
Diamicton 5, first doped layer 5 with a thickness of 5nm, the second layer forms the second doped layer 6 using 2% doping concentration, described the
Two doped layers 6 with a thickness of 5nm；
(6) TCO conductive film 7 is deposited using RPD PVD method, with a thickness of 100nm；
(7) positive back side Ag electrode 8 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(9) electrical property of test battery is carried out.
The present invention is used with superimposed layer doping concentration parameter, is not influenced on passivation, is cut transmitance, the electric conductivity of doped layer
All very well, the open-circuit voltage, short circuit current, fill factor of battery is made all to have greatly improved.
By the embodiment of the present invention data and the prior art all the same in addition to P-type non-crystalline silicon layer structure difference other parameters
The electrical property of comparison, the present invention and the prior art is compared referring to following table, mainly from open-circuit voltage Voc, short circuit current Isc and filling
Factor FF embodies, and the promotion of available solar battery unit for electrical property parameters of the invention makes the transfer efficiency of solar battery
Eta is promoted.
The above is only specific application examples of the invention, are not limited in any way to protection scope of the present invention.All uses
Equivalent transformation or equivalent replacement and the technical solution formed, all fall within rights protection scope of the present invention.
Claims (8)
1. a kind of emitter structure of bilayer amorphous silicon doped layer solar cell, it includes N-type crystalline silicon piece (1), and the N-type is brilliant
The front and back of body silicon wafer (1) is equipped with amorphous silicon intrinsic layer (2), the outside of the amorphous silicon intrinsic layer (2) of front and back
It is equipped with TCO conductive film (7), the outside of the TCO conductive film (7) is equipped with several Ag electrodes (8), it is characterised in that: the N-type
Different non-of two layers of doping concentration is equipped between the amorphous silicon intrinsic layer (2) and TCO conductive film (7) at the back side of crystal silicon chip (1)
Doped polycrystal silicon layer, i.e. first layer doped layer (5) and second layer doped layer (6), the first layer doped layer (5) are positioned close to non-
The side of crystal silicon intrinsic layer (2), the second layer doped layer (6) are positioned close to the side of TCO conductive film (7).
2. a kind of emitter structure of double-deck amorphous silicon doped layer solar cell according to claim 1, it is characterised in that:
The first layer doped layer (5) with a thickness of 1 ~ 20nm, doping concentration is 0.5% ~ 1%.
3. a kind of emitter structure of double-deck amorphous silicon doped layer solar cell according to claim 1, it is characterised in that:
The second layer doped layer (6) with a thickness of 1 ~ 20nm, doping concentration is 1% ~ 4%.
4. a kind of preparation method of the emitter structure of the double-deck amorphous silicon doped layer solar cell described in claim 1, special
Sign is, including the following steps:
The first step chooses substrate n type single crystal silicon piece (1) progress making herbs into wool, cleaning treatment；
Second step, double intrinsic amorphous silicon layers that the positive back side is prepared by PECVD；
Third step, selection N-type amorphous silicon film are light-receiving surface doped layer；
4th step, using plasma enhanced chemical vapor deposition prepare N-type non-crystalline silicon layer, i.e., amorphous silicon doped layer N layers (3)；
5th step prepares P-type non-crystalline silicon layer using PECVD, and first layer forms the first doped layer using 0.5% ~ 1% doping concentration
(5), the second layer forms the second doped layer (6) using 1% ~ 4% doping concentration；
6th step deposits TCO conductive film (7) using RPD PVD method；
7th step forms positive back side Ag electrode (8) by silk-screen printing；
8th step, solidification are so that form good Ohmic contact between silver grating line and TCO conductive film (7)；
9th step, the electrical property for carrying out test battery.
5. the preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell according to claim 4, special
Sign is: first doped layer (5) with a thickness of 1 ~ 20nm, second doped layer (6) with a thickness of 1 ~ 20nm, two layers
The overall thickness of amorphous silicon doped layer is 7 ~ 15nm.
6. the preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell according to claim 4, special
Sign is: the amorphous silicon intrinsic layer (2) at the positive back side is with a thickness of 5 ~ 10nm.
7. the preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell according to claim 4, special
Sign is: N layers of the amorphous silicon doped layer (3) is with a thickness of 4 ~ 8nm.
8. the preparation method of the emitter structure of bilayer amorphous silicon doped layer solar cell according to claim 4, special
Sign is: the TCO conductive film (7) is with a thickness of 70 ~ 110nm.
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| CN109950352A (en) * | 2019-04-23 | 2019-06-28 | 通威太阳能（成都）有限公司 | A kind of solar cell and its manufacturing method using amorphous silicon passivation layer |
| CN112713212A (en) * | 2021-01-28 | 2021-04-27 | 湖南红太阳光电科技有限公司 | HJT battery based on double-layer transparent conductive oxide film and preparation method thereof |
| CN113451445A (en) * | 2021-01-08 | 2021-09-28 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Solar cell and manufacturing method thereof |
| CN114628543A (en) * | 2020-11-27 | 2022-06-14 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
| WO2023103616A1 (en) * | 2021-12-07 | 2023-06-15 | 嘉兴阿特斯技术研究院有限公司 | Solar cell and preparation method therefor |
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| CN109950352A (en) * | 2019-04-23 | 2019-06-28 | 通威太阳能（成都）有限公司 | A kind of solar cell and its manufacturing method using amorphous silicon passivation layer |
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