CN112713212A - HJT battery based on double-layer transparent conductive oxide film and preparation method thereof - Google Patents
HJT battery based on double-layer transparent conductive oxide film and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 55
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 54
- 230000008569 process Effects 0.000 claims abstract description 49
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 38
- 229910052786 argon Inorganic materials 0.000 claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 57
- 239000010408 film Substances 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
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- 238000002834 transmittance Methods 0.000 claims description 24
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- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- GVGLGOZIDCSQPN-PVHGPHFFSA-N Heroin Chemical compound O([C@H]1[C@H](C=C[C@H]23)OC(C)=O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4OC(C)=O GVGLGOZIDCSQPN-PVHGPHFFSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 230000009286 beneficial effect Effects 0.000 abstract description 3
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- 239000000758 substrate Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 108
- 230000000052 comparative effect Effects 0.000 description 5
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Abstract
The invention discloses a HJT battery based on a double-layer transparent conductive oxide film and a preparation method thereof. In the invention, the auxiliary anode added in the magnetron sputtering process can change the electromagnetic field of a magnetron sputtering system, improve the ionization efficiency of argon and the plasma density of the system, obtain a transparent conductive oxide film with good conductivity, absorb stray electrons, and reduce the temperature rise and sputtering damage of a substrate, thereby being beneficial to improving the yield and preparation efficiency of the battery and finally obtaining the HJT battery with low cost and high conversion efficiency. The preparation method can be completed in different cavities of the same magnetron sputtering device, and the yield and the preparation efficiency of the battery are further improved.
Description
Technical Field
The invention belongs to the field of solar cells, relates to an HJT cell and a preparation method thereof, and particularly relates to an HJT cell based on a double-layer transparent conductive oxide film and a preparation method thereof.
Background
The silicon heterojunction solar cell (HJT cell) is a double-sided light-receiving heterojunction solar cell, has the characteristics of low production process temperature, high conversion efficiency, low temperature coefficient, double-sided power generation and the like, and is a high-efficiency solar cell with high cost performance and high technical difficulty in the current commercial products. Attention has been paid in recent years and has become one of the main development directions of solar cells.
In the development process of solar cells, a Transparent Conductive Oxide (TCO) film plays a crucial role, and the TCO film is used as an anti-reflection layer and a conductive layer for transporting carriers laterally to an electrode, and is widely used in HJT cells due to its photoelectric properties, such as high optical transmittance in the visible region, low resistivity, and the like.
The TCO layer in HJT has a significant impact on the conversion efficiency of the final cell. Good conductivity and transmittance of the TCO layer are basic guarantee of excellent performance of the HJT cell, but more complex requirements are required to obtain higher cell conversion efficiency.
(1) For the TCO layer, good transmittance is required to ensure more light passes through increasing the cell short circuit current.
(2) The TCO layer, which is in contact with the metal electrode, is required to form a good ohmic contact, and the TCO has good conductivity in order to increase the lateral conductivity and reduce the series resistance.
However, the TCO layer currently used does not satisfy these requirements at the same time, resulting in low conversion efficiency of the cell.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an HJT battery based on a double-layer transparent conductive oxide film with high conversion efficiency and a preparation method thereof.
In order to solve the technical problems, the invention adopts the following technical scheme:
a preparation method of a HJT battery based on a double-layer transparent conductive oxide film comprises the following steps:
s1, preparing intrinsic amorphous silicon layers on the light receiving surface and the backlight surface of the N-type silicon wafer respectively;
s2, sequentially preparing an N-type doped amorphous silicon layer and a P-type doped amorphous silicon layer on the intrinsic amorphous silicon layer of the light receiving surface and the backlight surface of the N-type silicon wafer;
s3, preparing a first transparent conductive oxide layer on the N-type doped amorphous silicon layer and the P-type doped amorphous silicon layer by adopting a direct-current magnetron sputtering process;
s4, preparing a second transparent conductive oxide layer on the first transparent conductive oxide layer on the light receiving surface and the backlight surface by adopting a magnetron sputtering process of an auxiliary anode;
and S5, preparing the metal grid line electrode.
In step S4, the process parameters of the magnetron sputtering process of the auxiliary anode are as follows: the potential between the auxiliary anodes is 0-300V, the pressure is 0.05-2 Pa, the deposition temperature is less than 200 ℃, the introduced process gas is argon and oxygen, the flow of the argon is 50-500 sccm, the flow ratio of the oxygen to the argon is 0-3: 100, and the power is 3-15 KW.
In step S4, the target material adopted in the magnetron sputtering process of the auxiliary anode is one of an ITO target material, an SCOT target material, and an AZO target material; in the ITO target material2O3And SnO2The mass ratio of (A) to (B) is 9: 1 or 97: 3.
In step S4, in the magnetron sputtering process using the auxiliary anode, the auxiliary anode is mounted on the wall of the sputtering chamber and symmetrically located at two sides of the cathode target; the distance between the auxiliary anode and the cathode target is 3 cm-12 cm; circulating cooling water is introduced into the auxiliary anode; the auxiliary anode is grounded or suspended.
In step S3, the process parameters of the dc or rf magnetron sputtering process are as follows: the pressure is 0.1 Pa-2 Pa, the deposition temperature is less than 200 ℃, the introduced process gas is argon and oxygen, the flow of the argon is 150 sccm-600 sccm, the flow ratio of the oxygen to the argon is 0-4: 100, and the power is 3 KW-15 KW.
In step S3, the target material adopted in the dc or rf magnetron sputtering process is one of an ITO target material, an SCOT target material, and an AZO target material; in the ITO target material2O3And SnO2The mass ratio of (A) to (B) is 9: 1 or 97: 3.
As a general technical concept, the invention also provides an HJT cell based on a double-layer transparent conductive oxide film, which is prepared by the preparation method.
The double-layer transparent conductive oxide film-based HJT battery is further improved to include an N-type silicon wafer, wherein an incident surface and a backlight surface of the N-type silicon wafer are respectively provided with an intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer is arranged on the intrinsic amorphous silicon layer of the incident surface of the N-type silicon wafer, a P-type doped amorphous silicon layer is arranged on the intrinsic amorphous silicon layer of the backlight surface of the N-type silicon wafer, a first transparent conductive oxide layer and a second transparent conductive oxide layer are sequentially arranged on the N-type doped amorphous silicon layer, a first transparent conductive oxide layer and a second transparent conductive oxide layer are sequentially arranged on the P-type doped amorphous silicon layer, and a metal grid line electrode is arranged on the second transparent conductive oxide layer.
In the above HJT cell based on the double-layer transparent conductive oxide thin film, the transmittance of the first transparent conductive oxide layer is more than 90%, and the resistivity is less than 1 × 10-3Omega cm; the second transparent conductive oxide layer has a transmittance of more than 89% and a resistivity of less than 7 × 10-4Ω·cm。
In the above HJT cell based on the double-layer transparent conductive oxide thin film, the thickness of the first transparent conductive oxide layer is 20nm to 100 nm; the first transparent conductive oxide layer is one of ITO, IWO and ITIO; the thickness of the second transparent conductive oxide layer is 5 nm-85 nm; the second transparent conductive oxide layer is one of ITO, IWO and ITIO.
Compared with the prior art, the invention has the advantages that:
(1) the invention provides a preparation method of an HJT battery based on double-layer transparent conductive oxide films, which is characterized in that a first layer of transparent conductive oxide film with high transmittance is prepared on a doped amorphous silicon layer by adopting a direct current or radio frequency magnetron sputtering process, the transmittance is preferentially ensured, and then a second layer of transparent conductive oxide film with good conductivity, which is in contact with a metal grid line electrode, is prepared by adopting a magnetron sputtering process of an auxiliary anode, wherein the auxiliary anode added in the magnetron sputtering process can change an electromagnetic field of a magnetron sputtering system, improve the ionization efficiency of argon and the plasma density of the system, so that the transparent conductive oxide film with good conductivity is obtained, which cannot be obtained by changing other conditions, and the added auxiliary anode can also absorb stray electrons, thereby reducing the temperature rise and sputtering damage of a substrate, and being beneficial to improving the yield and preparation efficiency of the battery, finally, the HJT battery with low cost and high conversion efficiency is prepared. In addition, in the preparation method, the adopted direct current or radio frequency magnetron sputtering process and the magnetron sputtering process of the auxiliary anode can be finished in different cavities of the same magnetron sputtering device, and the yield and the preparation efficiency of the battery are further improved.
(2) The invention also provides an HJT cell based on double-layer transparent conductive oxide films, wherein two layers of transparent conductive oxide films with different transmittances and conductivities are arranged on the light receiving surface and the backlight surface of the N-type silicon wafer, the transmittance of the first layer of transparent conductive oxide film in contact with the doped amorphous silicon layer is more than 90%, and the resistivity is less than 1 multiplied by 10-3Omega cm, the transmittance is more biased in the balance of transmittance and conductivity, and the transmittance of the film is improved to ensure that more light can pass through the film, thereby being beneficial to increasing the number of batteriesAnd the second transparent conductive oxide film in contact with the metal gate line electrode has a transmittance of > 89% and a resistivity of < 7 × 10-4Omega cm is more inclined to the conductivity in the aspect of the balance of transmittance and conductivity, and by improving the conductivity of the thin film, the good ohmic contact is favorably formed, the series resistance is reduced, and the transverse conductivity is improved, so that the filling factor of the battery can be greatly improved, and the conversion efficiency of the battery is further improved. According to the invention, the transmittance and the conductivity of the two layers of transparent conductive oxide thin films are respectively optimized, so that the transparent conductive oxide thin films have the balance of transmittance and conductivity on the whole, and the photoelectric property of the transparent conductive oxide thin films is integrally improved by combining the structural characteristics of the HJT battery, the filling factor is greatly improved under the condition of ensuring the short-circuit current of the battery, the conversion efficiency of the HJT battery is greatly improved, and the method has very important significance for the mass production of the HJT battery.
(3) In the HJT cell based on the double-layer transparent conductive oxide film, the thickness of the first transparent conductive oxide layer is optimized to be 20 nm-100 nm, the thickness of the second transparent conductive oxide layer is optimized to be 5 nm-85 nm, and the conversion efficiency of the HJT cell is favorably improved.
Drawings
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
Fig. 1 is a schematic cross-sectional structure diagram of an HJT cell based on a double-layer transparent conductive oxide thin film in embodiment 1 of the present invention.
Illustration of the drawings:
1. an N-type silicon wafer; 2. an intrinsic amorphous silicon layer; 3. an N-type doped amorphous silicon layer; 4. a P-type doped amorphous silicon layer; 5. a first transparent conductive oxide layer; 6. a second transparent conductive oxide layer; 7. and a metal grid line electrode.
Detailed Description
The invention is further described below with reference to the drawings and specific preferred embodiments of the description, without thereby limiting the scope of protection of the invention.
Example 1
A preparation method of a HJT battery based on a double-layer transparent conductive oxide film comprises the following steps:
and S1, preparing intrinsic amorphous silicon layers 2 on the light receiving surface and the backlight surface of the N-type silicon wafer 1 respectively.
S2, preparing an N-type doped amorphous silicon layer 3 and a P-type doped amorphous silicon layer 4 on the intrinsic amorphous silicon layer 2 of the light receiving surface and the backlight surface of the N-type silicon wafer 1 in sequence.
S3, preparing a first transparent conductive oxide layer 5 on the N-type doped amorphous silicon layer 3 and the P-type doped amorphous silicon layer 4 by adopting a direct current magnetron sputtering process, wherein the process parameters of the direct current magnetron sputtering process are as follows: the pressure is 0.5Pa, the deposition temperature is 100 ℃, the target material is ITO (97: 3), the introduced process gas is argon and oxygen, the flow of the argon is 400sccm, the flow ratio of the oxygen to the argon is 1: 100, and the power is 9 KW. In the step, a first layer of transparent conductive oxide film with high transmittance is prepared on the doped amorphous silicon layer by adopting a direct-current magnetron sputtering process, the transmittance is preferentially ensured in the aspect of balance between the transmittance and the conductivity, and more light can penetrate through the film by improving the transmittance of the film, so that the short-circuit current of the battery is increased.
S4, preparing a second transparent conductive oxide layer 6 on the first transparent conductive oxide layer 5 on the light receiving surface and the backlight surface by adopting a magnetron sputtering process of an auxiliary anode, wherein the auxiliary anode is arranged on the wall of a sputtering cavity and symmetrically positioned at two sides of a cathode target, the distance between the auxiliary anode and the cathode target is 4cm, circulating cooling water is introduced into the auxiliary anode, the auxiliary anode can be grounded or suspended, and meanwhile, the process parameters of the magnetron sputtering process of the auxiliary anode are as follows: the potential between the auxiliary anode is 0V, the pressure is 0.5Pa, the deposition temperature is 100 ℃, the target material is ITO (97: 3), the introduced process gas is argon and oxygen, the flow of the argon is 400sccm, the flow ratio of the oxygen to the argon is 1: 100, and the power is 4 KW. In the step, a magnetron sputtering process of an auxiliary anode is adopted to prepare a second layer of transparent conductive oxide film which is in contact with the metal grid line electrode and has good conductivity, wherein the added auxiliary anode can change an electromagnetic field of a magnetron sputtering system, the ionization efficiency of argon and the plasma density of the system are improved, and thus the transparent conductive oxide film with good conductivity is obtained. In addition, the added auxiliary anode can also absorb stray electrons, so that the temperature rise and sputtering damage of the substrate can be reduced, the yield and the preparation efficiency of the battery can be improved, and the HJT battery with low cost and high conversion efficiency is finally prepared. Meanwhile, the adopted direct-current magnetron sputtering process and the magnetron sputtering process of the auxiliary anode can be finished in different cavities of the same magnetron sputtering device, and the yield and the preparation efficiency of the battery are further improved.
And S5, preparing the metal grid line electrode 7, and completing the preparation of the HJT battery.
As shown in fig. 1, the HJT cell based on a double-layer transparent conductive oxide thin film manufactured in the above embodiment includes an N-type silicon wafer 1, wherein intrinsic amorphous silicon layers 2 are respectively disposed on a light-receiving surface and a backlight surface of the N-type silicon wafer 1, an N-type doped amorphous silicon layer 3 is disposed on the intrinsic amorphous silicon layer 2 on the light-receiving surface of the N-type silicon wafer 1, a P-type doped amorphous silicon layer 4 is disposed on the intrinsic amorphous silicon layer 2 on the backlight surface of the N-type silicon wafer 1, a first transparent conductive oxide layer 5 and a second transparent conductive oxide layer 6 are sequentially disposed on the N-type doped amorphous silicon layer 3, a first transparent conductive oxide layer 5 and a second transparent conductive oxide layer 6 are sequentially disposed on the P-type doped amorphous silicon layer 4, and a metal gate is disposed on the second transparent conductiveA line electrode 7 in which the first transparent conductive oxide layer 5 has a transmittance of > 90% and a resistivity of < 1E-3. omega. cm (1X 10)-3Ω · cm), transmittance of the second transparent conductive oxide layer 6 is > 89%, and resistivity is < 7E-4 Ω · cm (7 × 10)-4Ω·cm)。
In this embodiment, the thickness of the first transparent conductive oxide layer 5 is 85nm, and the first transparent conductive oxide layer 5 is ITO.
In this embodiment, the thickness of the second transparent conductive oxide layer 6 is 25nm, and the second transparent conductive oxide layer 6 is ITO.
In this embodiment, the metal gate line electrode 7 is a silver electrode.
Comparative example 1
A preparation method of a single-layer transparent conductive oxide film-based HJT battery comprises the following steps:
(1) and preparing an intrinsic amorphous silicon layer 2 on the light receiving surface and the backlight surface of the N-type silicon wafer 1 respectively.
(2) An N-type doped amorphous silicon layer 3 and a P-type doped amorphous silicon layer 4 are sequentially prepared on the intrinsic amorphous silicon layer 2 on the light receiving surface and the backlight surface of the N-type silicon wafer 1.
(3) Preparing a first transparent conductive oxide layer 5 on the N-type doped amorphous silicon layer 3 and the P-type doped amorphous silicon layer 4 by adopting a direct current magnetron sputtering process, wherein the process parameters of the direct current magnetron sputtering process are as follows: the pressure is 0.5Pa, the deposition temperature is 100 ℃, the target material is ITO (97: 3), the introduced process gas is argon and oxygen, the flow of the argon is 400sccm, the flow ratio of the oxygen to the argon is 1: 100, and the power is 9 KW. In this step, the thickness of the first transparent conductive oxide layer 5 is (110 nm).
(4) And preparing a metal grid line electrode 7 to finish the preparation of the HJT battery.
Comparative example 2
A preparation method of a single-layer transparent conductive oxide film-based HJT battery comprises the following steps:
(a) and preparing an intrinsic amorphous silicon layer 2 on the light receiving surface and the backlight surface of the N-type silicon wafer 1 respectively.
(b) An N-type doped amorphous silicon layer 3 and a P-type doped amorphous silicon layer 4 are sequentially prepared on the intrinsic amorphous silicon layer 2 on the light receiving surface and the backlight surface of the N-type silicon wafer 1.
(c) Preparing a first transparent conductive oxide layer 5 on the N-type doped amorphous silicon layer 3 and the P-type doped amorphous silicon layer 4 by adopting a magnetron sputtering process of an auxiliary anode, wherein the auxiliary anode is positioned at two sides of a cathode target, circulating cooling water is introduced into the auxiliary anode, the auxiliary anode can be grounded or suspended, and meanwhile, the magnetron sputtering process of the auxiliary anode has the following process parameters: the potential between the auxiliary anode is 0V, the pressure is 0.5Pa, the deposition temperature is 100 ℃, the target material is ITO (97: 3), the introduced process gas is argon and oxygen, the flow of the argon is 400sccm, the flow ratio of the oxygen to the argon is 1: 100, and the power is 9 KW. In this step, the thickness of the first transparent conductive oxide layer 5 is (110 nm).
(d) And preparing a metal grid line electrode 7 to finish the preparation of the HJT battery.
The HJT cells prepared in example 1, comparative example 1, and comparative example 2 were subjected to electrical property tests, and the results are shown in table 1.
Table 1 electrical property data of different HJT cells prepared in example 1, comparative example 2
As can be seen from table 1, compared with the conventional single-layer transparent conductive oxide thin film HJT cell, the photoelectric conversion efficiency of the double-layer transparent conductive oxide thin film based HJT cell prepared in the present invention is significantly improved, and the improvement range is as high as 0.21%.
The above examples are merely preferred embodiments of the present invention, and the scope of the present invention is not limited to the above examples. All technical schemes belonging to the idea of the invention belong to the protection scope of the invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention, and such modifications and embellishments should also be considered as within the scope of the invention.
Claims (10)
1. A preparation method of a HJT battery based on a double-layer transparent conductive oxide film is characterized by comprising the following steps:
s1, preparing intrinsic amorphous silicon layers (2) on the light receiving surface and the backlight surface of the N-type silicon wafer (1) respectively;
s2, preparing an N-type doped amorphous silicon layer (3) and a P-type doped amorphous silicon layer (4) on the intrinsic amorphous silicon layer (2) of the light receiving surface and the backlight surface of the N-type silicon wafer (1) in sequence;
s3, preparing a first transparent conductive oxide layer (5) on the N-type doped amorphous silicon layer (3) and the P-type doped amorphous silicon layer (4) by adopting a direct-current magnetron sputtering process;
s4, preparing a second transparent conductive oxide layer (6) on the first transparent conductive oxide layer (5) on the light receiving surface and the backlight surface by adopting a magnetron sputtering process of an auxiliary anode;
and S5, preparing a metal grid line electrode (7).
2. The method for preparing an HJT cell based on a double-layered transparent conductive oxide thin film as claimed in claim 1, wherein in step S4, the process parameters of the magnetron sputtering process of the auxiliary anode are: the potential between the auxiliary anodes is 0-300V, the pressure is 0.05-2 Pa, the deposition temperature is less than 200 ℃, the introduced process gas is argon and oxygen, the flow of the argon is 50-500 sccm, the flow ratio of the oxygen to the argon is 0-3: 100, and the power is 3-15 KW.
3. The method for preparing an HJT cell based on a double-layer transparent conductive oxide thin film as claimed in claim 2, wherein in step S4, the target material used in the magnetron sputtering process of the auxiliary anode is one of ITO target material, SCOT target material, AZO target material; in the ITO target material2O3And SnO2The mass ratio of (A) to (B) is 9: 1 or 97: 3.
4. The method for preparing HJT cell based on double-layered transparent conductive oxide film as claimed in claim 3, wherein in step S4, in the magnetron sputtering process using an auxiliary anode, the auxiliary anode is installed on the wall of the sputtering chamber and symmetrically located at two sides of the cathode target; the distance between the auxiliary anode and the cathode target is 3 cm-12 cm; circulating cooling water is introduced into the auxiliary anode; the auxiliary anode is grounded or suspended.
5. The method for preparing HJT battery based on double-layer transparent conductive oxide film according to any of claims 1 to 4, wherein in step S3, the process parameters of the DC or RF magnetron sputtering process are as follows: the pressure is 0.1 Pa-2 Pa, the deposition temperature is less than 200 ℃, the introduced process gas is argon and oxygen, the flow of the argon is 150 sccm-600 sccm, the flow ratio of the oxygen to the argon is 0-4: 100, and the power is 3 KW-15 KW.
6. The method for preparing an HJT cell based on a double-layer transparent conductive oxide thin film as claimed in claim 5, wherein in step S3, the target material used in the dc or rf magnetron sputtering process is one of ITO target material, SCOT target material, AZO target material; in the ITO target material2O3And SnO2The mass ratio of (A) to (B) is 9: 1 or 97: 3.
7. An HJT cell based on a double-layer transparent conductive oxide film is characterized by being prepared by the preparation method of any one of claims 1 to 6.
8. The HJT cell based on two layers of transparent conductive oxide films according to claim 7, it is characterized by comprising an N-type silicon wafer (1), wherein an intrinsic amorphous silicon layer (2) is respectively arranged on the light receiving surface and the backlight surface of the N-type silicon wafer (1), an N-type doped amorphous silicon layer (3) is arranged on the intrinsic amorphous silicon layer (2) of the illuminated surface of the N-type silicon wafer (1), a P-type doped amorphous silicon layer (4) is arranged on the intrinsic amorphous silicon layer (2) of the backlight surface of the N-type silicon wafer (1), a first transparent conductive oxide layer (5) and a second transparent conductive oxide layer (6) are sequentially arranged on the N-type doped amorphous silicon layer (3), a first transparent conductive oxide layer (5) and a second transparent conductive oxide layer (6) are sequentially arranged on the P-type doped amorphous silicon layer (4), and a metal grid line electrode (7) is arranged on the second transparent conductive oxide layer (6).
9. The HJT cell based on two layers of transparent conductive oxide films according to claim 8, wherein the first transparent conductive oxide layer (5) has a transmittance of > 90% and a resistivity of < 1 x 10-3Omega cm; the second transparent conductive oxide layer (6) has a transmittance of more than 89% and a resistivity of less than 7 x 10-4Ω·cm。
10. The HJT cell based on a double-layered transparent conductive oxide thin film according to claim 8 or 9, characterized in that the thickness of the first transparent conductive oxide layer (5) is 20nm to 100 nm; the first transparent conductive oxide layer (5) is one of ITO, IWO and ITIO; the thickness of the second transparent conductive oxide layer (6) is 5 nm-85 nm; the second transparent conductive oxide layer (6) is one of ITO, IWO and ITIO.
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