CN109935660A - A kind of method of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer - Google Patents
A kind of method of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims abstract description 110
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 69
- 238000000151 deposition Methods 0.000 title claims abstract description 68
- 230000008021 deposition Effects 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
- 229910052710 silicon Inorganic materials 0.000 claims description 66
- 239000010703 silicon Substances 0.000 claims description 66
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 53
- 229910000077 silane Inorganic materials 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 48
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 39
- 229910052739 hydrogen Inorganic materials 0.000 claims description 39
- 239000001257 hydrogen Substances 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 34
- 238000002360 preparation method Methods 0.000 claims description 29
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 26
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 238000012856 packing Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 8
- 150000003003 phosphines Chemical class 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 210000002268 wool Anatomy 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 210000004027 cell Anatomy 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000011161 development Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910000085 borane Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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- 230000013011 mating Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
The method of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer of the present invention, intrinsic amorphous silicon, the doped amorphous silicon film being passivated using Tubular PECVD device in solar cell surface passivation, formation pn-junction, field, deposition prepares positive back side intrinsic amorphous silicon layer, p-type doping amorphous silicon layer, n-type doping amorphous silicon layer, and minority carrier life time can reach 2000 μ s or more.HJT battery conversion efficiency can reach 23% or more, improve the production capacity of intrinsic amorphous silicon, doped amorphous silicon process, reduce production cost, promote to include the fast development using the solar battery technology of amorphous silicon film layer such as HJT battery, Topcon battery, equipment volume is reduced, investment is reduced costs, increases equipment capacity, occupied area is few, improves HJT battery product volume production scale.
Description
Technical field
The present invention relates to one of manufacture of solar cells technology Tubular PECVD devices to produce heterojunction solar battery
The method of amorphous silicon coated film deposition layer.
Background technique
Solar battery has been commonly applied in the industries such as science and techniques of defence, space technology, industrial equipment, household electrical appliance, high
Effect battery has become the silicon based hetero-junction sun electricity of inevitable development trend, especially intrinsic amorphous silicon layer (a-Si:H (i)) passivation
Pond (HJT battery) is one of research direction of emphasis, and silicon substrate heterojunction solar cell not only has high transformation efficiency, high open circuit
Voltage, and have low temperature coefficient, without photo attenuation (LID), without electroluminescent decaying (PID), low preparation process temperature etc.
Advantage；And silicon based hetero-junction battery, while guaranteeing high transformation efficiency, silicon wafer thickness can be thinned to 100 μm, effectively reduce
Silicon material consumption, and can be used to prepare flexible component；
For HJT battery, the key effect that amorphous silicon plays passivation, forms p-n junction, for the transfer efficiency of HJT battery
Decisive role is played, therefore, the excellent amorphous silicon membrane of processability is the key technology for obtaining efficient HJT battery；Tradition
HJT battery amorphous silicon deposition equipment is mainly board-like PECVD, Cat-CVD equipment, but all exist volume is big, cost input is high,
The defects of flat support plate production capacity is small, occupied area is more affects HJT battery product scale of mass production.
Summary of the invention
The technical problem to be solved by the invention is to provide one kind can be improved efficiency, increases production capacity, and structure is simple, behaviour
Make the method for convenient Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer.
The method of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer of the present invention, feature
It is: the following steps are included:
The first step carries out making herbs into wool processing to monocrystalline silicon piece, forms pyramid flannelette, removes foreign ion and carries out surface cleaning；
Second step forms passivation layer using Tubular PECVD device preparation intrinsic amorphous silicon layer, prepares p, n-type doping amorphous silicon layer
It is respectively formed p-n junction and field passivation layer；
Third step forms conductive and antireflection layer by magnetron sputtering in positive backside deposition TCO thin film；
4th step forms positive back side silver metal electrodes by silk-screen printing, forms conducting function；
5th step carries out hot setting to metal electrode and completes battery production；
Preferably, the technological parameter when Tubular PECVD device deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 1-2000 mW/ cm2, silicon chip surface power density in technical process, (feeling that sentence is imperfect)
Process pressure: 10-5000 mTorr,
Silicon temperature: 50-500 DEG C,
Silane flow rate: 0.1-500 sccm/L, volume are boiler tube internal process gas packing volume,
Hydrogen flowing quantity: 0-500 sccm/L, volume are boiler tube internal process gas packing volume,
Supply frequency: 1 kHz-100 MHz,
The intrinsic amorphous silicon layer is with a thickness of 3-20nm；
Preferably, the technological parameter when Tubular PECVD device deposition preparation p-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Boron source gas: it is with silane concentration ratio using boron source gas, diborane or trimethyl borines such as diborane or trimethyl borines
0.1%-20%；
Preferably, the technological parameter when Tubular PECVD device deposition preparation n-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-20%；
Preferably, for the monocrystalline silicon piece with a thickness of 80-200 μm, N-shaped or p-type doping silicon wafer, flannelette pyramid size are 1-15 μ
m；
Preferably, for the positive back side TCO thin film with a thickness of 60-120 nm, sheet resistance is 10-150 Ω/；
Preferably, the main grid width is 0.1-1mm, and main grid number is 5-15 root, and positive back silver pair grid line width is 10-40 μ
M, secondary grid line number are 60-150 root；
Preferably, the metal electrode solidification temperature is 100-200 DEG C, curing time 5-30min；
Preferably, the technological parameter when Tubular PECVD device deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 10-150 mW/cm2, silicon chip surface power density in technical process,
Process pressure: 400-3000 mTorr,
Silicon temperature: 150-350 DEG C
Silane flow rate: 1-50 sccm/L, volume are boiler tube internal process gas packing volume,
Hydrogen flowing quantity: 0-150 sccm/L, volume are boiler tube internal process gas packing volume,
Supply frequency: 40 kHz-40 MHz；
Preferably, the technological parameter when Tubular PECVD device deposition preparation p-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Boron source gas: it is with silane concentration ratio using boron source gas, diborane or trimethyl borines such as diborane or trimethyl borines
0.1%-10%；
Preferably, the technological parameter when Tubular PECVD device deposition preparation n-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-10%；
Preferably, the technological parameter when Tubular PECVD device deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 20 mW/cm2, silicon chip surface power density in technical process,
Process pressure: 600 mTorr,
Silicon temperature: 200 DEG C,
Silane flow rate: 2 sccm/L,
20 sccm/L of hydrogen flowing quantity,
Supply frequency: 100 MHz；
Technological parameter when deposition preparation p-type doping amorphous silicon layer are as follows:
Power density: 20 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 200 DEG C
2 sccm/L of silane flow rate
Hydrogen flowing quantity: 20 sccm/L
Diborane concentration: 3%
Supply frequency: 100 kHz
Technological parameter when deposition preparation n-type doping amorphous silicon layer are as follows:
Power density: 20 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 200 DEG C
Silane flow rate: 2 sccm/L
Hydrogen flowing quantity: 20 sccm/L
Phosphine concentration: 2%
Supply frequency: 100 kHz.
The method of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer of the present invention, using pipe
Formula PECVD device is passivated, is formed intrinsic amorphous silicon, the doped amorphous silicon film of pn-junction, field passivation in solar cell surface, sinks
Product prepares positive back side intrinsic amorphous silicon layer, p-type doping amorphous silicon layer, n-type doping amorphous silicon layer, and minority carrier life time can reach 2000 μ s
More than, HJT battery conversion efficiency can reach 23% or more, and efficiency is substantially suitable with board-like PECVD device, can be improved intrinsic non-
The production capacity of crystal silicon, doped amorphous silicon process reduces production cost, promotes to include that HJT battery, Topcon battery etc. use amorphous silicon
The fast development of the solar battery technology of film layer, reduces equipment volume, reduces costs investment, increases equipment capacity,
Occupied area is few, improves HJT battery product volume production scale.
Detailed description of the invention
Fig. 1 is Tubular PECVD device of embodiment of the present invention production heterojunction solar battery amorphous silicon coated film deposition layer
The schematic diagram of product structure that method is formed；
In figure:
1, front metal electrode
2, front transparent conductive film
3, front doped amorphous silicon film
4, front intrinsic amorphous silicon film
5, N-type crystalline silicon substrate
6, back side intrinsic amorphous silicon film
7, back side doped amorphous silicon film
8, backing transparent conductive film
9, back metal electrode.
Specific embodiment
As shown, a kind of method of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer,
Specific steps content is as follows:
The first step carries out making herbs into wool processing to N-type with a thickness of 180 μm of monocrystalline silicon piece, forms pyramid flannelette, remove foreign ion
And carry out surface cleaning；
Second step, using the positive intrinsic amorphous silicon layer of Tubular PECVD device preparation, positive n-type doping amorphous silicon layer, the back side is intrinsic
Amorphous silicon thickness, back side p-type doping amorphous silicon layer；Each 10 nm of thickness degree；
Third step deposits ito thin film by magnetron sputtering, and positive back side ito thin film is with a thickness of 100 nm；
4th step forms positive back side silver metal electrodes by silk-screen printing, and main grid width is 1mm, and main grid number is 5, the positive back side
Silver-colored pair grid line width is 40 μm, line number 100；
5th step, 200 DEG C of solidification temperature；
6th step carries out the electric performance test of battery, measures battery volume production average efficiency；
Tubular PECVD device concrete technology scheme are as follows:
Technological parameter when deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 1-2000 mW/ cm2, silicon chip surface power density in technical process,
Process pressure: 10-5000 mTorr,
Silicon temperature: 50-500 DEG C,
Silane flow rate: 0.1-500 sccm/L, volume are boiler tube internal process gas packing volume,
Hydrogen flowing quantity: 0-500 sccm/L, volume are boiler tube internal process gas packing volume,
Supply frequency: 1 kHz-100 MHz；
Technological parameter when deposition preparation p-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Boron source gas: it is with silane concentration ratio using boron source gas, diborane or trimethyl borines such as diborane or trimethyl borines
0.1%-20%；
Technological parameter when deposition preparation n-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-20%；
Further, process program is
Technological parameter when deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 10-150 mW/ cm2, silicon chip surface power density in technical process,
Process pressure: 400-3000 mTorr,
Silicon temperature: 150-350 DEG C,
Silane flow rate: 1-50 sccm/L, volume are boiler tube internal process gas packing volume,
Hydrogen flowing quantity: 0-150 sccm/L, volume are boiler tube internal process gas packing volume,
Supply frequency: 40 kHz-40 MHz；
Technological parameter when deposition preparation p-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Boron source gas: it is with silane concentration ratio using boron source gas, diborane or trimethyl borines such as diborane or trimethyl borines
0.1%-10%；
Technological parameter when deposition preparation n-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-10%；
Specific mentality of designing:
The invention belongs to area of solar cell, are related to a kind of tubular type pecvd process method of solar battery amorphous silicon plated film
Invention.
With the development of solar battery technology, the exploitation of high-efficiency battery is got more and more attention.Wherein use intrinsic amorphous silicon
The silicon substrate heterojunction solar cell (HJT battery) of layer (a-Si:H (i)) passivation is one of research direction of emphasis.It is well known that
Silicon substrate heterojunction solar cell not only has high transformation efficiency, high open-circuit voltage, but also has low temperature coefficient, without photic
Decay (LID), without advantages [2] such as electroluminescent decaying (PID), low preparation process temperature.In addition silicon based hetero-junction battery is guaranteeing
While high transformation efficiency, silicon wafer thickness can be thinned to 100 μm, effectively reduce silicon material consumption, and can be used to prepare flexible
Component.
For HJT battery, the key effect that amorphous silicon plays passivation, forms p-n junction, the conversion for HJT battery
Efficiency plays decisive role, and therefore, the excellent amorphous silicon membrane of processability is the key technology for obtaining efficient HJT battery.
HJT battery amorphous silicon deposition mainly has board-like PECVD, two kinds of equipment of Cat-CVD at present.
The main problem of amorphous silicon deposition equipment at present:
Vacuum cavity is big, causes equipment price expensive.
Flat support plate, single device production capacity are small.
Equipment size is big, and factory service, automation are mating at high cost, takes up a large area.
Amorphous silicon deposition equipment is to limit the major influence factors of HJT battery product scale of mass production at present.
The present invention provides a kind of being suitable for solar cell surface passivation, forming pn-junction, field passivation for tubular type PECVD deposition
Intrinsic amorphous silicon, doped amorphous silicon film process, problem to be solved is, tubular type PECVD method is used to improve
The production capacity of intrinsic amorphous silicon, doped amorphous silicon process reduces production cost, promotes to include that HJT battery, Topcon battery etc. use
The fast development of the solar battery technology of amorphous silicon film layer.
One, process program
Tubular type PECVD deposition intrinsic amorphous silicon layer process
Power density: 1-2000 mW/ cm2, silicon chip surface power density in technical process.
Process pressure: 10-5000 mTorr,
Silicon temperature: 50-500 DEG C
Silane flow rate: 0.1-500 sccm/L, volume are boiler tube internal process gas packing volume.
Hydrogen flowing quantity: 0-500 sccm/L, volume are boiler tube internal process gas packing volume.
Supply frequency: 1 kHz-100 MHz
Tubular type PECVD depositing p-type doped amorphous silicon layer process
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer.
Boron source gas: the boron source gas such as diborane or trimethyl borine, diborane or trimethyl borine and silane concentration ratio are used
For 0.1%-20%.
Tubular type PECVD depositing n-type doped amorphous silicon layer process
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer.
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-20%.
This process is suitable for the solar battery using amorphous silicon film layer.Such as the intrinsic amorphous silicon of hetero-junction solar cell
Passivation layer, doped amorphous silicon layer, the doped amorphous silicon layer of Topcon battery.
Two, selection process scheme
1. tubular type PECVD deposition intrinsic amorphous silicon layer process
Power density: 10-150 mW/ cm2, silicon chip surface power density in technical process.
Process pressure: 400-3000 mTorr,
Silicon temperature: 150-350 DEG C
Silane flow rate: 1-50 sccm/L, volume are boiler tube internal process gas packing volume.
Hydrogen flowing quantity: 0-150 sccm/L, volume are boiler tube internal process gas packing volume.
Supply frequency: 40 kHz-40 MHz
Tubular type PECVD depositing p-type doped amorphous silicon layer process
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer.
Boron source gas: the boron source gas such as diborane or trimethyl borine, diborane or trimethyl borine and silane concentration ratio are used
For 0.1%-10%.
Tubular type PECVD depositing n-type doped amorphous silicon layer process
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer.
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-10%.
Embodiment:
Baseline: conventional H JT battery making step
A, to N-type with a thickness of 180 μm monocrystalline silicon piece carry out making herbs into wool processing, formed pyramid flannelette, remove foreign ion and into
Row surface cleaning；
B, the intrinsic amorphous silicon layer at the positive back side, n-type doping amorphous silicon layer, the intrinsic amorphous in the back side are prepared using board-like PECVD device
Silicon thickness, p-type doping amorphous silicon layer.Each 10 nm of thickness degree.
C, ito thin film is deposited by magnetron sputtering, positive back side ito thin film is with a thickness of 100 nm.
D, positive back side silver metal electrodes are formed by silk-screen printing, main grid width is 1mm, and main grid number is 5, positive back silver
Secondary grid line width is 40 μm, line number 100；
E, 200 DEG C of solidification temperature.
F, the electrical property of test battery is carried out, battery volume production average efficiency is 23.3%.
Embodiment one:
A, to N-type with a thickness of 180 μm monocrystalline silicon piece carry out making herbs into wool processing, formed pyramid flannelette, remove foreign ion and into
Row surface cleaning；
B, positive intrinsic amorphous silicon layer, positive n-type doping amorphous silicon layer, the intrinsic amorphous in the back side are prepared using Tubular PECVD device
Silicon thickness, back side p-type doping amorphous silicon layer；Each 10 nm of thickness degree；
Tubular type PECVD deposition intrinsic amorphous silicon layer process:
20 mW/ cm of power density2
600 mTorr of pressure
200 DEG C of silicon temperature
2 sccm/L of silane flow rate
20 sccm/L of hydrogen flowing quantity
100 kHz of supply frequency
Tubular type PECVD depositing n-type doped amorphous silicon layer process:
Power density: 20 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 200 DEG C
Silane flow rate: 2 sccm/L
Hydrogen flowing quantity: 20 sccm/L
Phosphine concentration: 2%
Supply frequency: 100 kHz
Tubular type PECVD depositing p-type doped amorphous silicon layer process:
Power density: 20 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 200 DEG C
2 sccm/L of silane flow rate
Hydrogen flowing quantity: 20 sccm/L
Diborane concentration: 3%.
Supply frequency: 100 kHz；
C, ito thin film is deposited by magnetron sputtering, positive back side ito thin film is with a thickness of 100 nm；
D, positive back side silver metal electrodes are formed by silk-screen printing, main grid width is 1mm, and main grid number is 5, positive back silver pair grid
Line width is 40 μm, line number 100；
E, 200 DEG C of solidification temperature；
F, the electrical property of test battery is carried out, battery volume production average efficiency is 23.2%.
The passivation of tubular type PECVD deposited amorphous silicon, minority carrier life time can reach 2000 μ s or more, and HJT battery conversion efficiency is reachable
To 23% or more.
Embodiment two:
A, to N-type with a thickness of 180 μm monocrystalline silicon piece carry out making herbs into wool processing, formed pyramid flannelette, remove foreign ion and into
Row surface cleaning；
B, positive intrinsic amorphous silicon layer, positive n-type doping amorphous silicon layer, the intrinsic amorphous in the back side are prepared using Tubular PECVD device
Silicon thickness, back side p-type doping amorphous silicon layer；Each 10 nm of thickness degree；
Tubular type PECVD deposition intrinsic amorphous silicon layer process:
Power is close: 60 mW/ cm2
Pressure: 1000 mTorr
Silicon temperature: 250 DEG C
Silane flow: 5 sccm/L
Hydrogen flowing quantity: 40 sccm/L
Supply frequency: 80 kHz
Tubular type PECVD depositing n-type doped amorphous silicon layer process:
Power density: 60 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 250 DEG C
Silane flow rate: 5 sccm/L
Hydrogen flowing quantity: 40 sccm/L
Phosphine concentration: 2%
Supply frequency: 80 kHz
Tubular type PECVD depositing p-type doped amorphous silicon layer process:
Power density: 60 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 250 DEG C
Silane flow rate: 5 sccm/L
Hydrogen flowing quantity: 40 sccm/L
Diborane concentration: 3%.
Supply frequency: 80 kHz；
C, ito thin film is deposited by magnetron sputtering, positive back side ito thin film is with a thickness of 100 nm；
D, positive back side silver metal electrodes are formed by silk-screen printing, main grid width is 1mm, and main grid number is 5, positive back silver pair grid
Line width is 40 μm, line number 100；
E, 200 DEG C of solidification temperature；
F, the electrical property of test battery is carried out, battery volume production average efficiency is 23.1%.
The passivation of tubular type PECVD deposited amorphous silicon, minority carrier life time can reach 2000 μ s or more.HJT battery conversion efficiency is reachable
To 23% or more.
Embodiment three:
A, to N-type with a thickness of 180 μm monocrystalline silicon piece carry out making herbs into wool processing, formed pyramid flannelette, remove foreign ion and into
Row surface cleaning；
B, positive intrinsic amorphous silicon layer, positive n-type doping amorphous silicon layer, the intrinsic amorphous in the back side are prepared using Tubular PECVD device
Silicon thickness, back side p-type doping amorphous silicon layer；Each 10 nm of thickness degree；
Tubular type PECVD deposition intrinsic amorphous silicon layer process:
100 mW/ cm of power density2
1700 mTorr of pressure
250 DEG C of silicon temperature
10 sccm/L of silane flow rate
40 sccm/L of hydrogen flowing quantity
40 kHz of supply frequency
Tubular type PECVD depositing n-type doped amorphous silicon layer process:
Power density: 100 mW/ cm2
Process pressure: 1700 mTorr
Silicon temperature: 260 DEG C
Silane flow rate: 10 sccm/L
Hydrogen flowing quantity: 40 sccm/L
Phosphine concentration: 2%
Supply frequency: 40 kHz
Tubular type PECVD depositing p-type doped amorphous silicon layer process:
Power density: 100 mW/ cm2
Process pressure: 1700 mTorr
Silicon temperature: 260 DEG C
Silane flow rate: 10 sccm/L
Hydrogen flowing quantity: 40 sccm/L
Diborane concentration: 3%
Supply frequency: 40 kHz；
C, ito thin film is deposited by magnetron sputtering, positive back side ito thin film is with a thickness of 100 nm；
D, positive back side silver metal electrodes are formed by silk-screen printing, main grid width is 1mm, and main grid number is 5, positive back silver pair grid
Line width is 40 μm, line number 100；
E, 200 DEG C of solidification temperature；
F, the electrical property of test battery is carried out, battery volume production average efficiency is 23.3%.
The passivation of tubular type PECVD deposited amorphous silicon, minority carrier life time can reach 2000 μ s or more.HJT battery conversion efficiency is reachable
To 23% or more.
This tubular type PECVD amorphous silicon layer process of preparing is suitable for forming passivation film, p-n using amorphous silicon film layer
Knot, all solar cell types of field passivation film, including when (but) it is not limited to heterojunction solar battery, Topcon sun electricity
Pond, amorphous silicon solar cell.
Claims (11)
1. a kind of method of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer, it is characterised in that:
The following steps are included:
The first step carries out making herbs into wool processing to monocrystalline silicon piece, forms pyramid flannelette, removes foreign ion and carries out surface cleaning；
Second step forms passivation layer using Tubular PECVD device preparation intrinsic amorphous silicon layer, prepares p, n-type doping amorphous silicon layer
It is respectively formed p-n junction and field passivation layer；
Third step forms conductive and antireflection layer by magnetron sputtering in positive backside deposition TCO thin film；
4th step forms positive back side silver metal electrodes by silk-screen printing, forms conducting function；
5th step carries out hot setting to metal electrode and completes battery production.
2. the side of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer according to claim 1
Method, it is characterised in that: the technological parameter when Tubular PECVD device deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 1-2000 mW/ cm2, silicon chip surface power density in technical process, (feeling that sentence is imperfect)
Process pressure: 10-5000 mTorr,
Silicon temperature: 50-500 DEG C,
Silane flow rate: 0.1-500 sccm/L, volume are boiler tube internal process gas packing volume,
Hydrogen flowing quantity: 0-500 sccm/L, volume are boiler tube internal process gas packing volume,
Supply frequency: 1 kHz-100 MHz,
The intrinsic amorphous silicon layer is with a thickness of 3-20nm.
3. according to the method that claim 2 Tubular PECVD device produces heterojunction solar battery amorphous silicon coated film deposition layer,
It is characterized in that: the technological parameter when Tubular PECVD device deposition preparation p-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Boron source gas: it is with silane concentration ratio using boron source gas, diborane or trimethyl borines such as diborane or trimethyl borines
0.1%-20%；
It is special according to the method that claim 2 Tubular PECVD device produces heterojunction solar battery amorphous silicon coated film deposition layer
Sign is: the technological parameter when Tubular PECVD device deposition preparation n-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-20%.
4. the side of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer according to claim 1
Method, it is characterised in that: for the monocrystalline silicon piece with a thickness of 80-200 μm, N-shaped or p-type doping silicon wafer, flannelette pyramid size are 1-
15μm。
5. the side of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer according to claim 1
Method, it is characterised in that: for the positive back side TCO thin film with a thickness of 60-120 nm, sheet resistance is 10-150 Ω/.
6. the side of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer according to claim 1
Method, it is characterised in that: the main grid width is 0.1-1mm, and main grid number is 5-15 root, and positive back silver pair grid line width is 10-
40 μm, secondary grid line number is 60-150 root.
7. the side of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer according to claim 1
Method, it is characterised in that: the metal electrode solidification temperature is 100-200 DEG C, curing time 5-30min.
8. the side of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer according to claim 2
Method, it is characterised in that:
Technological parameter when the Tubular PECVD device deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 10-150 mW/cm2, silicon chip surface power density in technical process,
Process pressure: 400-3000 mTorr,
Silicon temperature: 150-350 DEG C
Silane flow rate: 1-50 sccm/L, volume are boiler tube internal process gas packing volume,
Hydrogen flowing quantity: 0-150 sccm/L, volume are boiler tube internal process gas packing volume,
Supply frequency: 40 kHz-40 MHz.
9. the side of Tubular PECVD device production heterojunction solar battery amorphous silicon coated film deposition layer according to claim 9
Method, it is characterised in that:
Technological parameter when the Tubular PECVD device deposition preparation p-type doping amorphous silicon layer are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Boron source gas: it is with silane concentration ratio using boron source gas, diborane or trimethyl borines such as diborane or trimethyl borines
0.1%-10%。
10. Tubular PECVD device produces heterojunction solar battery amorphous one of according to claim 4 or claim 9
The method of silicon coated film deposition layer, it is characterised in that: the work when Tubular PECVD device deposition preparation n-type doping amorphous silicon layer
Skill parameter are as follows:
Power density, process pressure, silicon temperature, silane flow rate, hydrogen flowing quantity, the same intrinsic amorphous silicon of supply frequency technological parameter
Layer；
Phosphorus source gas: using phosphorous gases such as phosphines, phosphine and silane concentration ratio are 0.1%-10%.
11. Tubular PECVD device produces heterojunction solar battery amorphous one of according to claim 2,3,4,9,10,11
The method of silicon coated film deposition layer, it is characterised in that:
Technological parameter when the Tubular PECVD device deposition preparation intrinsic amorphous silicon layer are as follows:
Power density: 20 mW/cm2, silicon chip surface power density in technical process,
Process pressure: 600 mTorr,
Silicon temperature: 200 DEG C,
Silane flow rate: 2 sccm/L,
20 sccm/L of hydrogen flowing quantity,
Supply frequency: 100 MHz；
Technological parameter when deposition preparation p-type doping amorphous silicon layer are as follows:
Power density: 20 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 200 DEG C
2 sccm/L of silane flow rate
Hydrogen flowing quantity: 20 sccm/L
Diborane concentration: 3%
Supply frequency: 100 kHz
Technological parameter when deposition preparation n-type doping amorphous silicon layer are as follows:
Power density: 20 mW/ cm2
Process pressure: 1000 mTorr
Silicon temperature: 200 DEG C
Silane flow rate: 2 sccm/L
Hydrogen flowing quantity: 20 sccm/L
Phosphine concentration: 2%
Supply frequency: 100 kHz.
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