CN115376893B - Doped amorphous silicon layer, preparation method, preparation device and solar cell - Google Patents

Doped amorphous silicon layer, preparation method, preparation device and solar cell Download PDF

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CN115376893B
CN115376893B CN202211298854.3A CN202211298854A CN115376893B CN 115376893 B CN115376893 B CN 115376893B CN 202211298854 A CN202211298854 A CN 202211298854A CN 115376893 B CN115376893 B CN 115376893B
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amorphous silicon
doped amorphous
silicon layer
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毛文龙
林佳继
刘群
张武
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Laplace New Energy Technology Co ltd
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Abstract

The invention provides a doped amorphous silicon layer, a preparation method, a preparation device and a solar cell, wherein the preparation method comprises the following steps: and (3) loading the silicon wafer into a deposition cavity for pretreatment, introducing a doping source, a silicon source and hydrogen for first deposition, and carrying out second deposition after the feeding amount of the doping source is increased to prepare the doped amorphous silicon layer. The invention adopts twice deposition, and the second deposition adopts large-gas-flow air intake, thereby effectively ensuring the uniform dispersion of doping source gas, realizing the mass preparation of doped amorphous silicon layers and solving the problem of uneven plating of amorphous silicon layers on the furnace mouth and the furnace tail area of the silicon wafer.

Description

Doped amorphous silicon layer, preparation method, preparation device and solar cell
Technical Field
The invention belongs to the technical field of deposition preparation, and relates to a doped amorphous silicon layer, a preparation method, a preparation device and a solar cell.
Background
Tunnel oxide/polysilicon contact passivation (Topcon) cells are receiving wide attention in the crystalline silicon solar cell industry for their high conversion efficiency. The doped polysilicon layer is one of the key structures of Topcon batteries, and is currently mainly obtained by depositing an amorphous silicon film by a Low Pressure Chemical Vapor Deposition (LPCVD) technique and then crystallizing at a high temperature. In addition, other researchers have proposed that amorphous silicon films can be deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques.
The amorphous silicon film is deposited by plasma enhanced chemical vapor deposition, silane, hydrogen and phosphane or diborane are used as reaction gases, and the amorphous silicon film with the required thickness is obtained by deposition under the conditions of certain reaction chamber temperature, pressure and radio frequency power. However, in order to increase the deposition yield, large-size furnace tubes are often used for mass deposition preparation, so that the problem of uneven thickness of the deposited film in the furnace mouth and furnace tail areas is caused.
CN109935660a discloses a method for producing a heterojunction solar cell amorphous silicon coating deposition layer by a tubular PECVD apparatus, comprising the following steps: firstly, texturing monocrystalline silicon wafers to form pyramid textured surfaces, removing impurity ions and cleaning the surfaces; secondly, preparing an intrinsic amorphous silicon layer by using a tubular PECVD device to form a passivation layer, and preparing p-n junctions and a field passivation layer by using the p-n doped amorphous silicon layer; thirdly, depositing TCO films on the front side and the back side through magnetron sputtering to form a conductive and antireflection layer; fourthly, forming front and back silver metal electrodes through screen printing to form a conductive function; and fifthly, performing high-temperature curing on the metal electrode to finish battery manufacturing.
Therefore, how to realize mass and high-quality preparation of the doped amorphous silicon layer becomes a technical problem which needs to be solved urgently at present.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a doped amorphous silicon layer, a preparation method, a preparation device and a solar cell, wherein the two-time deposition is adopted, and the second-time deposition adopts large-volume air intake, so that the uniform dispersion of doped source gas is effectively ensured, the mass preparation of the doped amorphous silicon layer is realized, and the problem that the amorphous silicon layer is unevenly plated on a furnace mouth and a furnace tail area of a silicon wafer is solved.
To achieve the purpose, the invention adopts the following technical scheme:
In a first aspect, the present invention provides a method for preparing a doped amorphous silicon layer, the method comprising:
And (3) loading the silicon wafer into a deposition cavity for pretreatment, introducing a doping source, a silicon source and hydrogen for first deposition, and carrying out second deposition after the feeding amount of the doping source is increased to prepare the doped amorphous silicon layer.
The invention adopts two-step deposition, realizes the thickness growth of the doped amorphous silicon layer on the basis of the first deposition, further adopts a large-gas doping source in the second deposition process, ensures the doping quality, improves the dispersibility of the doping gas, improves the overall deposition uniformity, avoids the problem of furnace mouth and furnace tail areas caused by uneven diffusion of a small-flow gas source in a deposition cavity, and realizes mass deposition.
It should be noted that the preparation method of the present invention may be used for multiple depositions according to the thickness and uniformity of the deposited film.
As a preferable embodiment of the present invention, the pretreatment includes a vacuum-pumping treatment and an oxidation treatment which are sequentially performed.
Preferably, the vacuumizing pressure of the vacuumizing treatment is 1500-2000 mtorr, for example 1500mtorr, 1550mtorr, 1600mtorr, 1650mtorr, 1700mtorr, 1750mtorr, 1800mtorr, 1850mtorr, 1900mtorr, 1950mtorr or 2000mtorr.
Preferably, the oxidation treatment mode comprises N 2 O oxidation.
Preferably, the oxidation method of the N 2 O comprises the following steps: n 2 O is introduced into the deposition chamber and kept for a certain time.
Preferably, the temperature during the oxidation of N 2 O is 350-400 ℃, such as 350 ℃, 355 ℃, 360 ℃, 365 ℃, 370 ℃, 375 ℃, 380 ℃, 385 ℃, 390 ℃, 395 ℃ or 400 ℃.
Preferably, the flow rate of the N 2 O is 7000-10000 sccm, for example 7000sccm、7200sccm、7400sccm、7600sccm、7800sccm、8000sccm、8200sccm、8400sccm、8600sccm、8800sccm、9000sccm、9200sccm、9400sccm、9600sccm、9800sccm or 10000sccm.
Preferably, the certain time is 1-3 min, for example, 1.0min, 1.2min, 1.4min, 1.6min, 1.8min, 2.0min, 2.2min, 2.4min, 2.6min, 2.8min or 3.0min.
As a preferred embodiment of the present invention, the volume ratio of the silicon source, the doping source and the hydrogen gas in the first deposition is 1: (0.2 to 0.4): (3-3.8), for example, 1:0.2:3, 1:0.3:3, 1:0.4:3, 1:0.3:3.2, 1:0.3:3.4, or 1:0.3:3.8.
The volume ratio of the silicon source, the doping source and the hydrogen in the first deposition is controlled to be 1: (0.2 to 0.4): (3-3.8), ensuring the growth speed of the doped amorphous silicon layer, further generating the doped amorphous silicon layer with a certain thickness after the first deposition, if the proportion of the doping source is too high, the film growth speed is slow, the requirement of the use thickness of the doped amorphous silicon layer can not be met, and if the proportion of the doping source is too low, the doping proportion of the doped amorphous silicon layer is low, and the deposition efficiency of the second deposition is affected.
Preferably, the flow rate of the doping source in the first deposition is 100-500 sccm, for example, 100sccm, 150sccm, 200sccm, 250sccm, 300sccm, 350sccm, 400sccm, 450sccm or 500sccm.
Preferably, the temperature of the first deposition is 400-420 ℃, such as 400 ℃, 402 ℃, 404 ℃, 406 ℃, 408 ℃, 410 ℃, 412 ℃, 414 ℃, 416 ℃, 418 ℃, or 420 ℃.
Preferably, the pressure of the first deposition is 1500-2000 mtorr, for example 1500mtorr, 1550mtorr, 1600mtorr, 1650mtorr, 1700mtorr, 1750mtorr, 1800mtorr, 1850mtorr, 1900mtorr, 1950mtorr or 2000mtorr.
Preferably, the time of the first deposition is 3-6 min, for example, 3.0min, 3.3min, 3.6min, 3.9min, 4.2min, 4.5min, 4.8min, 5.1min, 5.4min, 5.7min or 6.0min.
As a preferred embodiment of the present invention, the volume ratio of the silicon source, the doping source and the hydrogen gas in the second deposition is 1: (1-1.3): (2-3), for example, 1:1.1:2, 1:1.2:2, 1:1.3:2, 1:1:2, 1:1:2.5, or 1:1:3.
The volume ratio of the silicon source, the doping source and the hydrogen in the second deposition is controlled to be 1: (1-1.3): (2-3), by greatly improving the proportion of the doping source gas, the growth of the film layer in the thickness direction is slowed down, the doping quality of the film layer is ensured, if the proportion of the doping source is too low, the gas is unevenly dispersed, the film layer is unevenly grown in thickness and the doping amount is poor, and if the proportion of the doping source is too high, the deposited film is amorphized, and the film quality is affected.
Preferably, the flow rate of the doping source in the second deposition is 2000-2300 sccm, for example 2000sccm, 2030sccm, 2060sccm, 2090sccm, 2120sccm, 2150sccm, 2180sccm, 2210sccm, 2240sccm, 2270sccm or 2300sccm.
According to the invention, the inlet flow of the doping source for the second deposition is 2000-2300 sccm, the doping source inlet flow far exceeding 1000sccm in the prior art is adopted, so that the doping source is uniformly dispersed in the whole deposition cavity, the deposition uniformity of each position in the deposition cavity is ensured, the furnace tube is generally arranged in a large size based on mass production capacity in the prior art, a small-flow air source far away from an air inlet is difficult to uniformly diffuse, the thickness of a deposited coating film is low, and the efficiency is low. If the flow rate is less than 2000sccm, the doping source gas is difficult to diffuse uniformly, and if the flow rate is more than 2300sccm, the deposition rate is slow, and amorphization of the deposited coating film is caused, which affects the quality of the coating film.
Preferably, the temperature of the second deposition is 400-420 ℃, such as 400 ℃, 402 ℃, 404 ℃, 406 ℃, 408 ℃, 410 ℃, 412 ℃, 414 ℃, 416 ℃, 418 ℃, or 420 ℃.
Preferably, the pressure of the second deposition is 1500-2000 mtorr, for example 1500mtorr, 1550mtorr, 1600mtorr, 1650mtorr, 1700mtorr, 1750mtorr, 1800mtorr, 1850mtorr, 1900mtorr, 1950mtorr or 2000mtorr.
Preferably, the time of the second deposition is 7-12 min, for example, 7.0min, 7.5min, 8.0min, 8.5min, 9.0min, 9.5min, 10.0min, 10.5min, 11.0min, 11.5min or 12.0min.
As a preferable technical scheme of the invention, the flow rate of the silicon source is 250-2500 sccm, for example 250sccm、500sccm、1000sccm、1500sccm、2000sccm、2050sccm、2100sccm、2150sccm、2200sccm、2250sccm、2300sccm、2350sccm、2400sccm、2450sccm or 2500sccm.
Preferably, the flow rate of the hydrogen gas is 750-9000 sccm, for example 750sccm、1000sccm、2000sccm、3000sccm、4000sccm、5000sccm、6000sccm、7000sccm、7200sccm、7400sccm、7600sccm、7800sccm、8000sccm、8200sccm、8400sccm、8600sccm、8800sccm or 9000sccm.
As a preferred embodiment of the present invention, the doping source includes a boron source.
Preferably, the boron source comprises diborane.
Preferably, the silicon source comprises silane, disilane or tetraethyl orthosilicate.
Preferably, the thickness of the doped amorphous silicon layer is 95-105 nm.
Exemplary, the specific steps of the preparation method of the doped amorphous silicon layer are provided, which comprises the following steps:
Placing the silicon wafer in a deposition cavity, carrying out 1500-2000 mtorr vacuumizing treatment on the deposition cavity, then introducing 7000-10000 sccm of N 2 O into the deposition cavity, and carrying out oxidation treatment for 1-3 min at 350-400 ℃;
Heating the deposition cavity to 400-420 ℃, and introducing the following components in a volume ratio of 1: (0.2 to 0.4): (3-3.8) performing first deposition for 3-6 min at 1500-2000 mtorr, wherein the doping source has an inlet flow of 100-500 sccm, the silicon source has an inlet flow of 250-2500 sccm, the hydrogen has an inlet flow of 750-9500 sccm, and further, the hydrogen has an inlet flow of 7000-9000 sccm;
Heating the deposition cavity to 400-420 ℃, and introducing the following components in a volume ratio of 1: (1-1.3): (2-3) performing secondary deposition for 7-12 min at 1500-2000 mtorr, wherein the doping source has an inlet flow rate of 2000-2300 sccm, the silicon source has an inlet flow rate of 1538-2300 sccm, and the hydrogen gas has an inlet flow rate of 3076-6900 sccm;
and (3) introducing protective gas (optionally nitrogen) for back pressure, and taking out the silicon wafer to prepare the doped amorphous silicon layer.
In the present invention, the doped amorphous silicon layer has a single-layer structure.
In a second aspect, the present invention provides a preparation device of a doped amorphous silicon layer, where the preparation device adopts the preparation method of a doped amorphous silicon layer according to the first aspect, the preparation device includes a housing having a deposition chamber, a silicon wafer placement member is disposed in the deposition chamber, the silicon wafer placement member is used for placing a plurality of silicon wafers, and at least one air inlet pipe extending into the deposition chamber is disposed in the housing.
As a preferable technical scheme of the invention, the air outlet of the air inlet pipe is arranged in the placing area of the silicon wafer.
Preferably, a plurality of pressure relief holes are formed in the air inlet pipe at intervals, and the openings of the pressure relief holes face the inner wall of the shell.
It should be noted that the preparation device provided by the invention necessarily comprises a heater and a vacuum extractor required by the required reaction, so as to ensure the deposition temperature and pressure in the deposition cavity. Further, the form of the wafer holder is not particularly limited and is not particularly limited in the present invention, and for example, the wafer holder may be a quartz boat.
In a third aspect, the present invention provides a doped amorphous silicon layer, which is prepared by using the preparation method of the doped amorphous silicon layer in the first aspect.
In a fourth aspect, the present invention provides a solar cell comprising a doped amorphous silicon layer according to the third aspect.
The numerical ranges recited herein include not only the above-listed point values, but also any point values between the above-listed numerical ranges that are not listed, and are limited in space and for the sake of brevity, the present invention is not intended to be exhaustive of the specific point values that the stated ranges include.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts two-step deposition, realizes the thickness growth of the doped amorphous silicon layer on the basis of the first deposition, further adopts a large-gas doping source in the second deposition process, ensures the doping quality, improves the dispersibility of the doping gas, improves the overall deposition uniformity, avoids the problem of furnace mouth and furnace tail areas caused by uneven diffusion of a small-flow gas source in a deposition cavity, and realizes mass deposition.
Drawings
Fig. 1 is a flowchart of a method for preparing a doped amorphous silicon layer according to embodiments 1 to 3 of the present invention;
FIG. 2 is a schematic structural diagram of a device for preparing a doped amorphous silicon layer according to an embodiment of the present invention;
Fig. 3 is a side cross-sectional view of a device for preparing a doped amorphous silicon layer according to an embodiment of the present invention.
Wherein, 1-shell; 2-a silicon wafer placement member; 3-an air inlet pipe.
Detailed Description
For better illustrating the present invention, the technical scheme of the present invention is convenient to understand, and the present invention is further described in detail below. The following examples are merely illustrative of the present invention and are not intended to represent or limit the scope of the invention as defined in the claims.
The technical scheme of the invention is further described by the following specific embodiments.
Example 1
The embodiment provides a preparation method of a doped amorphous silicon layer, wherein, as shown in fig. 1, the preparation method specifically includes:
placing a silicon wafer in a deposition cavity, carrying out 1700mtorr vacuumizing treatment on the deposition cavity, then introducing 8000sccm of N 2 O into the deposition cavity, and carrying out oxidation treatment for 2min at 370 ℃;
Heating the deposition cavity to 420 ℃, and introducing the mixture into a volume ratio of 1:0.2:3.6, silane, diborane and hydrogen, wherein the silane is introduced at 2500sccm, the diborane is introduced at 500sccm, and the hydrogen is introduced at 9000sccm;
heating the deposition cavity to 420 ℃, and introducing the mixture into a volume ratio of 1:1:3, carrying out secondary deposition for 12min at 1700mtorr, wherein the flow rate of the silicon source is 2300sccm, the flow rate of diborane is 2300sccm, and the flow rate of hydrogen is 6900sccm;
and (5) introducing nitrogen back pressure, and taking out the silicon wafer to prepare the doped amorphous silicon layer.
Example 2
The embodiment provides a preparation method of a doped amorphous silicon layer, wherein, as shown in fig. 1, the preparation method specifically includes:
Placing a silicon wafer in a deposition cavity, carrying out 1500mtorr vacuumizing treatment on the deposition cavity, then introducing 10000sccm of N 2 O into the deposition cavity, and carrying out oxidation treatment for 1min at 400 ℃;
Heating the deposition cavity to 410 ℃, and introducing the mixture into a volume ratio of 1:0.3:3, performing first deposition for 3min at 1500mtorr, wherein the flow rate of silane is 335sccm, the flow rate of diborane is 100.5sccm, and the flow rate of hydrogen is 1005sccm;
Heating the deposition cavity to 420 ℃, and introducing the mixture into a volume ratio of 1:1.2:2, performing secondary deposition for 7min at 1600mtorr, wherein the flow rate of the silicon source is 1667sccm, the flow rate of diborane is 2000sccm, and the flow rate of hydrogen is 3333sccm;
and (5) introducing nitrogen back pressure, and taking out the silicon wafer to prepare the doped amorphous silicon layer.
Example 3
The embodiment provides a preparation method of a doped amorphous silicon layer, wherein, as shown in fig. 1, the preparation method specifically includes:
placing a silicon wafer in a deposition cavity, carrying out 2000mtorr vacuumizing treatment on the deposition cavity, then introducing 7000sccm of N 2 O into the deposition cavity, and carrying out oxidation treatment for 3min at 350 ℃;
heating the deposition cavity to 400 ℃, and introducing the mixture into a volume ratio of 1:0.4:3.8, silane, diborane and hydrogen, wherein the silane is introduced at a flow rate of 750sccm, the diborane is introduced at a flow rate of 300sccm and the hydrogen is introduced at a flow rate of 2850sccm;
Heating the deposition cavity to 410 ℃, and introducing the mixture into a volume ratio of 1:1.3:2.5, performing secondary deposition for 9min at 2000mtorr, wherein the flow rate of the silicon source is 1692sccm, the flow rate of diborane is 2200sccm, and the flow rate of hydrogen is 4230sccm;
and (5) introducing nitrogen back pressure, and taking out the silicon wafer to prepare the doped amorphous silicon layer. Example 4
The present example provides a method for preparing a doped amorphous silicon layer, which is different from example 1 in that the flow rate of diborane introduced in the first deposition is 50sccm, and the remaining parameters and steps are identical to those of example 1.
Example 5
The present example provides a method for preparing a doped amorphous silicon layer, which is different from example 1 in that the flow rate of diborane introduced in the first deposition is 600sccm, and the remaining parameters and steps are identical to those of example 1.
Example 6
The present example provides a method for preparing a doped amorphous silicon layer, which is different from example 1 in that the flow rate of diborane in the second deposition is 1800sccm, and the remaining parameters and steps are identical to those of example 1.
Example 7
The present example provides a method for preparing a doped amorphous silicon layer, which is different from example 1 in that the flow rate of diborane for the second deposition is 2500sccm, and the remaining parameters and steps are identical to those of example 1.
Example 8
The embodiment provides a preparation method of a doped amorphous silicon layer, which specifically comprises the following steps:
placing a silicon wafer in a deposition cavity, carrying out 2000mtorr vacuumizing treatment on the deposition cavity, then introducing 8000sccm of N 2 O into the deposition cavity, and carrying out oxidation treatment for 2.5min at 360 ℃;
heating the deposition chamber to 400 ℃, and performing first deposition for 6min at 2000mtorr, wherein the flow rate of silane is 2000sccm, the flow rate of diborane is 300sccm, and the flow rate of hydrogen is 8000sccm;
Heating the deposition chamber to 410 ℃, and performing secondary deposition for 9min at 2000mtorr, wherein the flow rate of the silicon source is 2200sccm, the flow rate of diborane is 2100sccm, and the flow rate of hydrogen is 8000sccm;
and (3) introducing nitrogen back pressure, taking out the silicon wafer, preparing the doped amorphous silicon layer, and testing to obtain the thickness uniformity between the wafers of 2.3%.
Example 9
The embodiment provides a preparation method of a doped amorphous silicon layer, which specifically comprises the following steps:
Placing a silicon wafer in a deposition cavity, performing 1800mtorr vacuumizing treatment on the deposition cavity, then introducing 7000sccm of N 2 O into the deposition cavity, and performing oxidation treatment for 3min at 370 ℃;
heating the deposition chamber to 410 ℃, and performing first deposition for 6min at 2000mtorr, wherein the flow rate of silane is 2500sccm, the flow rate of diborane is 500sccm, and the flow rate of hydrogen is 9000sccm;
Heating the deposition chamber to 420 ℃, and performing secondary deposition for 9min at 2000mtorr, wherein the flow rate of the silicon source is 2000sccm, the flow rate of diborane is 2300sccm, and the flow rate of hydrogen is 9000sccm;
And (3) introducing nitrogen back pressure, taking out the silicon wafer, preparing the doped amorphous silicon layer, and testing to obtain the thickness uniformity between the wafers of 2.5%.
Example 10
The embodiment provides a preparation method of a doped amorphous silicon layer, which specifically comprises the following steps:
placing a silicon wafer in a deposition cavity, vacuumizing the deposition cavity by 1800mtorr, introducing 9000sccm of N 2 O into the deposition cavity, and oxidizing at 380 ℃ for 2min;
heating the deposition chamber to 400 ℃, and performing first deposition for 6min under 1800mtorr, wherein the flow rate of silane is 2300sccm, the flow rate of diborane is 100sccm, and the flow rate of hydrogen is 7000sccm;
Heating the deposition chamber to 420 ℃, and performing secondary deposition for 9min at 1900mtorr, wherein the flow rate of the silicon source is 2500sccm, the flow rate of diborane is 2000sccm, and the flow rate of hydrogen is 7000sccm;
and (3) introducing nitrogen back pressure, taking out the silicon wafer, preparing the doped amorphous silicon layer, and testing to obtain the thickness uniformity between the wafers of 2.6%.
According to the embodiment 8, 9 and 10, the doping source gas quantity in the second deposition process is adjusted to be larger than the first doping source gas quantity, and the doping source is rapidly and uniformly dispersed in the second deposition process by means of large gas quantity (7000-9000 sccm) of hydrogen, so that the doping uniformity is effectively improved.
Comparative example 1
The comparative example provides a preparation method of a doped amorphous silicon layer, which specifically comprises the following steps:
placing a silicon wafer in a deposition cavity, carrying out 1700mtorr vacuumizing treatment on the deposition cavity, then introducing 8000sccm of N 2 O into the deposition cavity, and carrying out oxidation treatment for 2min at 370 ℃;
heating the deposition cavity to 420 ℃, and introducing the mixture into a volume ratio of 1:0.2:3.6, carrying out primary deposition for 17min at 1700mtorr, wherein the inlet flow rate of diborane is 500sccm, the inlet flow rate of silane is 2500sccm, and the inlet flow rate of hydrogen is 9000sccm;
and (5) introducing nitrogen back pressure, and taking out the silicon wafer to prepare the doped amorphous silicon layer.
Comparative example 2
The comparative example provides a preparation method of a doped amorphous silicon layer, which specifically comprises the following steps:
placing a silicon wafer in a deposition cavity, carrying out 1700mtorr vacuumizing treatment on the deposition cavity, then introducing 8000sccm of N 2 O into the deposition cavity, and carrying out oxidation treatment for 2min at 370 ℃;
Heating the deposition cavity to 420 ℃, and introducing the mixture into a volume ratio of 1:1:3, carrying out primary deposition on silane, diborane and hydrogen for 17min at 1700mtorr, wherein the flow rate of diborane is 2300sccm, the flow rate of silicon source is 2300sccm, and the flow rate of hydrogen is 6900sccm;
and (5) introducing nitrogen back pressure, and taking out the silicon wafer to prepare the doped amorphous silicon layer.
The embodiment of the invention also provides a preparation device for the doped amorphous silicon layer in the embodiment, as shown in fig. 2 and 3, comprising a shell 1 with a deposition cavity, wherein a silicon wafer placing piece 2 is arranged in the deposition cavity, the silicon wafer placing piece 2 can be selected as a quartz boat, as shown by the numbers B1-B9 in fig. 2, the silicon wafer placing piece is respectively represented by different placing area numbers in the quartz boat along the horizontal direction, the silicon wafer placing piece is used for placing a plurality of silicon wafers, and at least one air inlet pipe 3 extending into the deposition cavity is arranged in the shell. Further, the gas outlet of the gas inlet pipe 3 is arranged in the placement area of the silicon wafer, a plurality of pressure relief holes are formed in the gas inlet pipe 3 at intervals, and the openings of the pressure relief holes face the inner wall of the shell 1.
The embodiment of the invention also provides a solar cell, which comprises the doped amorphous silicon layer prepared by the embodiment.
In the above examples and comparative examples, the quartz boat was sequentially provided with 9 regions in the horizontal direction, and each region was sequentially divided into 25 layers in the vertical direction.
The thickness of the doped amorphous silicon layer on the silicon wafer of the partial region in example 1 is shown in table 1.
TABLE 1
The thickness uniformity between the doped amorphous silicon layers on each silicon wafer in the above examples and comparative examples was calculated, and the calculation results are shown in table 2. The calculation method of thickness uniformity between the sheets is the ratio of the variance of the thickness of the doped amorphous silicon layer in the furnace to the average thickness of the doped amorphous silicon layer, and the lower the value of thickness uniformity between the sheets, the better the thickness uniformity.
TABLE 2
As can be seen from the table above:
(1) Example 1 in comparison with examples 4-5, it can be seen that the volume ratio of the silicon source, the doping source and the hydrogen gas in the first deposition is controlled to be 1: (0.2 to 0.4): (3-3.8), the inlet flow of the doping source is 100-500 sccm, so that the growth speed of the doped amorphous silicon layer is ensured, and further, after the first deposition, the doped amorphous silicon layer with a certain thickness is generated, if the doping source is excessively high, the film growth speed is low, the use thickness requirement of the doped amorphous silicon layer cannot be met, and if the doping source is excessively low, the doping proportion of the doped amorphous silicon layer is low, and the deposition efficiency of the second deposition is influenced.
(2) Example 1 in comparison with examples 6 and 7, it can be seen that in the examples of the present invention, by controlling the volume ratio of the silicon source, the doping source and the hydrogen gas in the second deposition to be 1: (1-1.3): (2-3), by greatly improving the proportion of the doping source gas, the growth of the film layer in the thickness direction is slowed down, the doping quality of the film layer is ensured, if the proportion of the doping source is too low, the gas is unevenly dispersed, the film layer is unevenly grown in thickness and the doping amount is poor, and if the proportion of the doping source is too high, the deposited film is amorphized, and the film quality is affected.
(3) Compared with the comparative examples 1 and 2, the embodiment 1 can be seen that the invention adopts two-step deposition, realizes the thickness growth of the doped amorphous silicon layer on the basis of the first deposition, further adopts a large-gas doping source in the second deposition process, ensures the doping quality, improves the dispersibility of the doping gas, improves the overall deposition uniformity, avoids the problem of furnace mouth and furnace tail area caused by uneven diffusion of a small-flow gas source in a deposition cavity, and realizes mass deposition.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.

Claims (4)

1. A method for preparing a doped amorphous silicon layer, the method comprising:
The method comprises the steps of loading a silicon wafer into a deposition cavity for pretreatment, and introducing a doping source, a silicon source and hydrogen to perform first deposition, wherein the introducing flow of the doping source in the first deposition is 100-500 sccm; after the feeding amount of the doping source is increased, carrying out secondary deposition to prepare the doped amorphous silicon layer; the volume ratio of the silicon source, the doping source and the hydrogen gas in the first deposition is 1: (0.2 to 0.4): (3-3.8); the volume ratio of the silicon source, the doping source and the hydrogen in the second deposition is 1: (1-1.3): (2-3), wherein the flow rate of the doping source in the second deposition is 2000-2300 sccm.
2. The method according to claim 1, wherein the deposition temperature is 400-420 ℃, and the deposition pressure is 1500-2000 mtorr.
3. A doped amorphous silicon layer, wherein the doped amorphous silicon layer is prepared by the preparation method of the doped amorphous silicon layer according to claim 1 or 2.
4. A solar cell comprising the doped amorphous silicon layer of claim 3.
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