CN107507887A - A kind of method for controlling doping curve conformity - Google Patents

A kind of method for controlling doping curve conformity Download PDF

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Publication number
CN107507887A
CN107507887A CN201710741576.7A CN201710741576A CN107507887A CN 107507887 A CN107507887 A CN 107507887A CN 201710741576 A CN201710741576 A CN 201710741576A CN 107507887 A CN107507887 A CN 107507887A
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temperature
doped source
knot
time
passed
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CN107507887B (en
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刘志强
费正洪
党继东
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Funing atlas sunshine Power Technology Co., Ltd
CSI Cells Co Ltd
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CSI Solar Technologies Inc
CSI GCL Solar Manufacturing Yancheng Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a kind of method for controlling doping curve conformity, belong to field of photovoltaic technology.This method include into boat step, heating step, oxidation step, stepped depositions, heating knot step, cooling annealing step, go out boat walk, wherein, stepped depositions are, in the case where stove tail has thermograde to fire door, are passed through nitrogen, oxygen, doped source gas and carry out pre-deposition；The method that its diffusion technique uses substep Multiple depositions, increase the uniform doping of silicon chip surface doped source, and by designing deposition steps temperature, each warm area temperature is set to increase successively from stove tail to fire door, thermograde is formed, solid solubility of the doped source in fire door region in silicon is added, compensate for the problem of fire door region doping source doping is very few, the uniformity of surface concentration and the uniformity of each region doping source doping amount are ensure that, and then ensures silicon chip junction depth uniformity；Make that the doping curve of diffusion technique is more consistent, and unit for electrical property parameters is more consistent by this method, improve the CTM of component.

Description

A kind of method for controlling doping curve conformity
Technical field
The present invention relates to field of photovoltaic technology, more particularly to a kind of method for controlling doping curve conformity.
Background technology
Existing diffusion technique is promoted using first low temperature depositing, rear high temperature, and from the mode that the air inlet of stove tail and fire door are evacuated PN junction is made, because high temperature forward step temperature is different, its fire door temperature is high, stove tail temperature is low, makes each regional temperature of silicon chip It is inconsistent, easily cause higher close to stove tail doped source concentration, fire door doped source concentration is low, result in differing for PN junction depth Cause.In addition, TongYuan's deposition steps temperature is basically identical, thermograde is not formed, thus causes stove tail doping source doping mistake More, fire door doping is very few so that surface concentration exists inconsistent.As shown in figure 1, A curves represent the doping of stove tail, B curves represent Fire door adulterates.Because doping level is different, causes the curve after doping inconsistent, cause unit for electrical property parameters notable difference to be present, For final production into after component, component CTM values are relatively low, wherein, CTM values, i.e. Cell ToModule, proxy component power output with The percentage of cell piece power summation, for representing the degree of component power loss, CTM values are higher, represent component package power The degree of loss is smaller, if CTM values are relatively low, the power output of component is possible to not reach expected requirement, by client's Complain, ultimately cause the loss of economic benefit.
The content of the invention
It is an object of the invention to propose a kind of method for controlling doping curve conformity, it is bent that it can effectively improve doping The uniformity of line.
To use following technical scheme up to this purpose, the present invention：
A kind of method for controlling doping curve conformity, comprises the following steps：
Stepped depositions, in the case where stove tail has thermograde to fire door, it is passed through nitrogen, oxygen, doped source and carries out in advance Deposition.
As a kind of preferred embodiment of the method for the present invention, stepped depositions walk including low temperature depositing twice, and each low temperature sinks Accumulating step is：
In the case where stove tail has thermograde to fire door, 6000~10000sccm of nitrogen is passed through, oxygen 500~ 1500sccm, 1500~2500sccm of source flux is adulterated, carry out pre-deposition, the time is 300~500S.Such as nitrogen is 6000sccm、6500sccm、7000sccm、7500sccm、8000sccm、8500sccm、9000sccm、9500sccm、 10000sccm；Oxygen be 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm, 1100sccm, 1200sccm、1300sccm、1400sccm、1500sccm；Doping source flux be 1500sccm, 1600sccm, 1700sccm, 1800sccm、1900sccm、2000sccm、2100sccm、2200sccm、2300sccm、2400sccm、2500sccm；Time For 300S, 310S, 320S, 330S, 340S, 350S, 360S, 370S, 380S, 390S, 400S, 410S, 420S, 430S, 440S, 450S、460S、470S、480S、490S、500S。
As a kind of preferred embodiment of the method for the present invention, after first time low temperature depositing step, second low temperature depositing step Also include before：
Stable step for the first time, after low temperature is passed through doped source, continues to be passed through 500~1500sccm of oxygen, consumes previous low temperature The remaining doped source of deposition steps.Such as oxygen flow be 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm、1100sccm、1200sccm、1300sccm、1400sccm、1500sccm。
As a kind of preferred embodiment of the method for the present invention, also include after second of low temperature depositing step：
Second of stable step, after low temperature is passed through doped source, continues to be passed through 500~1500sccm of oxygen, time low temperature after consumption The remaining doped source of deposition steps.Such as oxygen flow be 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm、1100sccm、1200sccm、1300sccm、1400sccm、1500sccm。
As a kind of preferred embodiment of the method for the present invention, doped source is phosphorus source or boron source.
As a kind of preferred embodiment of the method for the present invention, thermograde is：
When doped source is phosphorus, temperature gradually rises in the range of 775~795 DEG C from stove tail to fire door, for example, temperature from The change of stove tail to fire door turns to 775 DEG C, 780 DEG C, 785 DEG C, 790 DEG C, 795 DEG C；
When doped source is boron, temperature gradually rises in the range of 990~1010 DEG C from stove tail to fire door, for example, temperature Change from stove tail to fire door turns to 990 DEG C, 995 DEG C, 1000 DEG C, 1005 DEG C, 1010 DEG C.
As a kind of preferred embodiment of the method for the present invention, also include before stepped depositions：
Enter boat step, silicon carbide paddle, which carries, to be filled the quartz boat of silicon chip and enter boiler tube；
Heating step, under the atmosphere for being passed through nitrogen, boiler tube heating；
Oxidation step, is passed through nitrogen and oxygen, carries out oxidation pre-treatment to silicon chip surface, forms one layer of thin oxide layer.
As the present invention method a kind of preferred embodiment, when doped source is phosphorus,
Enter boat step, temperature be 760~800 DEG C, nitrogen flow is 8000~12000sccm, the time is 700~900S's Under the conditions of carry out；Such as temperature can be 760 DEG C, 765 DEG C, 770 DEG C, 775 DEG C, 780 DEG C, 785 DEG C, 790 DEG C, 795 DEG C, 800 ℃；Nitrogen flow can be 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, 10500sccm, 11000sccm、11500sccm、12000sccm；Time can be 700S, 750S, 800S, 850S, 900S；
Heating step, in the case where nitrogen flow is 8000~12000sccm atmosphere, boiler tube is warming up to 760~800 DEG C, the time For 400~800S；Such as nitrogen flow can be 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, 10500sccm、11000sccm、11500sccm、12000sccm；Temperature can be 760 DEG C, 765 DEG C, 770 DEG C, 775 DEG C, 780 DEG C, 785 DEG C, 790 DEG C, 795 DEG C, 800 DEG C, the time can be 400S, 410S, 420S, 430S, 440S, 450S, 460S, 470S, 480S、490S、500S、500S、510S、520S、530S、540S、550S、560S、570S、580S、590S、600S、610S、 620S、630S、640S、650S、660S、670S、680S、690S、700S、710S、720S、730S、740S、750S、760S、 770S、780S、790S、800S；
Oxidation step, is passed through 6000~10000sccm nitrogen and 1500~2500sccm oxygen, the time for 500~ 700S, for example, nitrogen flow be 6000sccm, 6500sccm, 7000sccm, 7500sccm, 8000sccm, 8500sccm, 9000sccm、9500sccm、10000sccm；Oxygen flow be 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm, 2500sccm, time 500S, 510S、520S、530S、540S、550S、560S、570S、580S、590S、600S、610S、620S、630S、640S、650S、 660S、670S、680S、690S、700S。
As the present invention method a kind of preferred embodiment, when doped source is boron,
Enter boat step, temperature be 960~1000 DEG C, nitrogen flow is 8000~12000sccm, the time is 700~900S Under conditions of carry out；Such as temperature be 960 DEG C, 965 DEG C, 970 DEG C, 975 DEG C, 980 DEG C, 985 DEG C, 990 DEG C, 995 DEG C, 1000 ℃；Nitrogen flow be 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, 10500sccm, 11000sccm、11500sccm、12000sccm；Time be 700S, 710S, 720S, 730S, 740S, 750S, 760S, 770S, 780S、790S、800S、810S、820S、830S、840S、850S、860S、870S、890S、900S；
Heating step, in the case where nitrogen flow is 8000~12000sccm atmosphere, boiler tube is warming up to 960~1000 DEG C, the time For 400~800S；Nitrogen flow be 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, 10500sccm、11000sccm、11500sccm、12000sccm；Temperature be 400S, 410S, 420S, 430S, 440S, 450S, 460S、470S、480S、490S、500S、500S、510S、520S、530S、540S、550S、560S、570S、580S、590S、 600S、610S、620S、630S、640S、650S、660S、670S、680S、690S、700S、710S、720S、730S、740S、 750S、760S、770S、780S、790S、800S；
Oxidation step, is passed through 6000~10000sccm nitrogen and 1500~2500sccm oxygen, the time for 500~ 700S, for example, nitrogen flow be 6000sccm, 6500sccm, 7000sccm, 7500sccm, 8000sccm, 8500sccm, 9000sccm、9500sccm、10000sccm；Oxygen flow be 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm、2000sccm、2100sccm、2200sccm、2300sccm、2400sccm、2500sccm；Time be 500S, 510S、520S、530S、540S、550S、560S、570S、580S、590S、600S、610S、620S、630S、640S、650S、 660S、670S、680S、690S、700S。
As a kind of preferred embodiment of the method for the present invention, also include after stepped depositions：
Heat up knot step, and diffusion furnace is rapidly heated to design temperature, under the temperature conditionss, carries out knot processing, makes silicon Being spread into silicon in glassy layer；
Cooling annealing walks, and after the completion of knot, under conditions of hyperoxia, starts slow cooling；
Go out boat step, after cooling terminates, quartz boat outlet pipe, diffusion terminates.
As the present invention method a kind of preferred embodiment, when doped source is phosphorus,
Heating knot step includes：
Be rapidly heated step, and in the case where nitrogen flow is 8000~12000sccm atmosphere, diffusion furnace, which is rapidly heated, arrives setting High-temperature temperature；Such as nitrogen flow be 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, 10500sccm、11000sccm、11500sccm、12000sccm；The high-temperature temperature being rapidly heated in step is 800~880 DEG C, example Such as temperature can be 800 DEG C, 810 DEG C, 820 DEG C, 830 DEG C, 840 DEG C, 850 DEG C, 860 DEG C, 870 DEG C, 880 DEG C；It is rapidly heated Heating-up time in step is 100~500S, for example, the time can be 100S, 120S, 150S, 160S, 175S, 190S, 200S, 240S、260S、280S、300S、350S、380S、400S、430S、450S、470S、490S、500S；
High temperature knot walks, and under the high temperature conditions, carries out knot processing, the doped source in silica glass layer is spread into silicon； High temperature knot step in high-temperature temperature and be rapidly heated step in high-temperature temperature it is identical, high temperature knot walk in the knot time be 400~800S, for example, the time can be such as time be 400S, 410S, 420S, 430S, 440S, 450S, 460S, 470S, 480S、490S、500S、510S、520S、530S、540S、550S、560S、570S、580S、590S、600S、610S、620S、 630S、640S、650S、660S、670S、680S、690S、700S、710S、720S、730S、740S、750S、760S、770S、 780S、790S、800S；
700~740 DEG C are cooled in cooling annealing step, such as temperature is 710 DEG C, 720 DEG C, 730 DEG C, 740 DEG C.
As the present invention method a kind of preferred embodiment, when doped source is boron,
Heating knot step includes：
Be rapidly heated step, and in the case where nitrogen flow is 8000~12000sccm atmosphere, diffusion furnace, which is rapidly heated, arrives setting High-temperature temperature, for example, nitrogen flow be 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, 10500sccm、11000sccm、11500sccm、12000sccm；The high-temperature temperature being rapidly heated in step is 100~1080 DEG C, Heating-up time is 100~500S；Such as the high-temperature temperature be 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C, 300 DEG C, 350 DEG C, 400 ℃、450℃、500℃、550℃、600℃、650℃、700℃、750℃、800℃、850℃、900℃、950℃、1000℃、 1080 DEG C, heating-up time 100S, 120S, 150S, 160S, 175S, 190S, 200S, 240S, 260S, 280S, 300S, 350S, 380S、400S、430S、450S、470S、490S、500S；
High temperature knot walks, and under the high temperature conditions, carries out knot processing, the doped source in silica glass layer is spread into silicon； High temperature knot step in high-temperature temperature and be rapidly heated step in high-temperature temperature it is identical, high temperature knot walk in the knot time be 400~800S；Such as the knot time can be 400S, 410S, 420S, 430S, 440S, 450S, 460S, 470S, 480S, 490S、500S、510S、520S、530S、540S、550S、560S、570S、580S、590S、600S、610S、620S、630S、 640S、650S、660S、670S、680S、690S、700S、710S、720S、730S、740S、750S、760S、770S、780S、 790S、800S；
Be cooled to 900~940 DEG C in cooling annealing step, for example, the temperature is 900 DEG C, 910 DEG C, 920 DEG C, 930 DEG C, 940 ℃。
The method of the present invention, the method that its diffusion technique uses Multiple depositions, the doping for increasing silicon chip surface doped source are equal Even property, and by designing deposition steps temperature, each warm area temperature is increased successively from stove tail to fire door, thermograde is formed, is increased Solid solubility of the doped source in fire door region in silicon is added, compensate for the problem of fire door region doping source doping is very few, ensure that The uniformity of the uniformity of surface concentration and each region doping source doping amount, and then ensure silicon chip junction depth uniformity；Pass through the party Method makes that the doping curve of diffusion technique is more consistent, and unit for electrical property parameters is more consistent, improves the CTM of component.
Brief description of the drawings
Fig. 1 is the doping curve synoptic diagram of existing diffusion technique；
Fig. 2 is the method flow schematic diagram of the present invention；
Fig. 3 is the doping curve synoptic diagram of the present invention.
Embodiment
2,3 and technical scheme is further illustrated by embodiment below in conjunction with the accompanying drawings.
As shown in Fig. 2 a kind of method for controlling doping curve conformity provided by the invention, when doped source is phosphorus, bag Include following steps：
Step 1：Enter boat step, temperature is 760~800 DEG C, nitrogen flow is 8000~12000sccm, the time be 700~ Under conditions of 900S, silicon carbide paddle, which carries, to be filled the quartz boat of silicon chip and enters boiler tube.When entering boat, oven door opening, actual temperature Degree can be lower than design temperature.
Step 2：Heating step, in the case where nitrogen flow is 8000~12000sccm atmosphere, boiler tube is warming up to 760~800 DEG C, the time is 400~800S.After boat is entered, fire door is closed, temperature is increased to design temperature by step by heating up.
Step 3：Oxidation step, is passed through 6000~10000sccm nitrogen and 1500~2500sccm oxygen, to silicon chip table Face carries out oxidation pre-treatment, forms one layer of thin oxide layer, the time is 500~700S.By the pre-oxidation for aoxidizing step, it is possible to increase The uniformity of doped source deposition.
Step 4：Low temperature depositing walks：In the case where thermograde be present to fire door in stove tail, be passed through nitrogen 6000~ 10000sccm, 500~1500sccm of oxygen, adulterate 1500~2500sccm of source flux, carry out pre-deposition, the time be 300~ 500S.Thermograde is that temperature gradually rises in the range of 775~795 DEG C from stove tail to fire door.
Step 5：Stable step：After low temperature is passed through doped source, continue to be passed through 500~1500sccm of oxygen, consume low in step 4 Remaining doped source after temperature deposition.
Step 6：Low temperature depositing walks：Low temperature is passed through doped source deposition, repeat step 4 again.
Step 7：Stable step：After low temperature is passed through doped source, continue to be passed through 500~1500sccm of oxygen, consume low in step 6 Remaining doped source after temperature deposition.
The principle of Multiple depositions is taken, ensures that the doped source doping that fire door deposits to stove tail is basically identical.
Step 8：Be rapidly heated step：Nitrogen flow be 8000~12000sccm atmosphere under, diffusion furnace be rapidly heated to The temperature of setting.Using the different junction depth of different temperature representatives, in order to ensure the uniformity of silicon chip junction depth, each warm area of diffusion furnace It is arranged to identical temperature.In step 8, the temperature set as 800~880 DEG C, heating-up time for being rapidly heated in step for 100~ 500S。
Step 9：High temperature knot walks：Under the hot conditions of step 8, knot processing is carried out, 400~800S of time, makes silicon Doped source in glassy layer spreads into silicon.Temperature in step 9 is identical with step 8.The diffusion technique promotes high temperature The fire door of step is identical to stove tail temperature setting, ensure that the junction depth of doping curve is basically identical.
Step 10：Cooling annealing step：After the completion of knot, under conditions of hyperoxia, start slow cooling to cool to 700~ 740℃.This aspect repairs lattice damage, and on the one hand cool crystal boundary gettering, improves silicon chip minority carrier life after diffusion.
Step 11：Go out boat step：After cooling terminates, quartz boat outlet pipe, diffusion terminates.
It is almost consistent with curve A, B of stove tail in fire door by the method for the present invention, caused phosphorus doping curve.
Embodiment one
In the present embodiment, a kind of method for controlling doping curve conformity, its doped source is phosphorus source, is specifically included as follows Step, refer to table one.
The processing step table of table one
Embodiment two
In the present embodiment, a kind of method for controlling doping curve conformity, its doped source is phosphorus source, is specifically included as follows Step, refer to table two.
The processing step table of table two
Embodiment three
In the present embodiment, a kind of method for controlling doping curve conformity, its doped source is phosphorus source, is specifically included as follows Step, refer to table three.
The processing step table of table three
As shown in Fig. 2 a kind of method for controlling doping curve conformity provided by the invention, when doped source is boron, bag Include following steps：
Step 1：Enter boat step, temperature be 960~1000 DEG C, nitrogen flow is 8000~12000sccm, the time 700 Under conditions of~900S, silicon carbide paddle, which carries, to be filled the quartz boat of silicon chip and enters boiler tube.When entering boat, oven door opening is actual Temperature can be lower than design temperature.
Step 2：Heating step, in the case where nitrogen flow is 8000~12000sccm atmosphere, boiler tube is warming up to 960~1000 DEG C, the time is 400~800S.After boat is entered, fire door is closed, temperature is increased to design temperature by step by heating up.
Step 3：Oxidation step, is passed through 6000~10000sccm nitrogen and 1500~2500sccm oxygen, to silicon chip table Face carries out oxidation pre-treatment, forms one layer of thin oxide layer, the time is 500~700S.By the pre-oxidation for aoxidizing step, it is possible to increase The uniformity of doped source deposition.
Step 4：Low temperature depositing walks：In the case where thermograde be present to fire door in stove tail, be passed through nitrogen 6000~ 10000sccm, 500~1500sccm of oxygen, adulterate 1500~2500sccm of source flux, carry out pre-deposition, the time be 300~ 500S.Thermograde is that temperature gradually rises in the range of 990~1010 DEG C from stove tail to fire door.
Step 5：Stable step：After low temperature is passed through doped source, continue to be passed through 500~1500sccm of oxygen, consume low in step 4 Remaining doped source after temperature deposition.
Step 6：Low temperature depositing walks：Low temperature is passed through doped source deposition, repeat step 4 again.
Step 7：Stable step：After low temperature is passed through doped source, continue to be passed through 500~1500sccm of oxygen, consume low in step 6 Remaining doped source after temperature deposition.
The principle of Multiple depositions is taken, ensures that the doped source doping that fire door deposits to stove tail is basically identical.
Step 8：Be rapidly heated step：Nitrogen flow be 8000~12000sccm atmosphere under, diffusion furnace be rapidly heated to The temperature of setting.Using the different junction depth of different temperature representatives, in order to ensure the uniformity of silicon chip junction depth, each warm area of diffusion furnace It is arranged to identical temperature.In step 8, for the temperature set as 100~1080 DEG C, the heating-up time being rapidly heated in step is 100 ~500S.
Step 9：High temperature knot walks：Under the hot conditions of step 8, knot processing is carried out, 400~800S of time, makes silicon Doped source gas in glassy layer spreads into silicon.Temperature in step 9 is identical with step 8.The diffusion technique is by high temperature Promote the fire door of step identical to stove tail temperature setting, ensure that the junction depth of doping curve is basically identical.
Step 10：Cooling annealing step：After the completion of knot, under conditions of hyperoxia, start slow cooling to cool to 900~ 940℃.This aspect repairs lattice damage, and on the one hand cool crystal boundary gettering, improves silicon chip minority carrier life after diffusion.
Step 11：Go out boat step：After cooling terminates, quartz boat outlet pipe, diffusion terminates.
By the method for the present invention, caused boron doping curve is almost consistent with curve A, B of stove tail in fire door.
Example IV
In the present embodiment, a kind of method for controlling doping curve conformity, its doped source is boron source, is specifically included as follows Step, refer to table four.
The processing step table of table four
Embodiment five
In the present embodiment, a kind of method for controlling doping curve conformity, its doped source is boron source, is specifically included as follows Step, refer to table five.
The processing step table of table five
Embodiment six
In the present embodiment, a kind of method for controlling doping curve conformity, its doped source is boron source, is specifically included as follows Step, refer to table six.
The processing step table of table six
Comparative example one
In comparative example, diffusion technique comprises the following steps, and refers to table seven.
The processing step table of table seven
By embodiment one, two, three, four, five, six respectively compared with comparative example one, technique electrical property is joined before and after computed improved Several standard deviation, by standard deviation it can be seen that the dispersion degree of one group of data.Result of calculation is as shown in Table 8：
Table eight：Unit for electrical property parameters standard deviation contrasts
The standard deviation of embodiment one, two, three, four, five, six is respectively less than comparative example one it can be seen from table eight, illustrates to implement Unit for electrical property parameters value in example one is closer, and curve conformity is more preferable (as shown in Figure 3).
By embodiment one, two, three, four, five, six respectively compared with comparative example one, the reduced value of relevant parameter is as shown in Table 9：
Table nine：Efficiency comparative
The efficiency of embodiment one, two, three, four, five, six is not less than comparative example one, but the one of parameter it can be seen from table nine Cause property is more preferable, and component CTM is more preferable.
To sum up, method of the invention has following advantage：
1st, by controlling identical sheet resistance, TongYuan's deposition steps (low temperature depositing step) temperature is increased successively from stove tail to fire door Add, ensure that surface concentration is basically identical, this ensure that the uniformity of doping curve.
2nd, reduce to form temperature difference successively from fire door to furnace temperature by temperature, and then form thermograde, because mixing Miscellaneous source is entered from stove tail, and stove tail region domain doped source is relatively excessive, and relatively low temperature corresponds to relatively low solid solubility, and fire door temperature Degree is high, and doped source is few, exactly because thermograde, just can guarantee that stove tail realizes that identical deposits doped source doping to fire door. Further, in-furnace temperature gradient directly can be provided with by technological parameter, and diffusion furnace is divided into 5 segmentation temperature controls, from fire door Controlled respectively by 5 different temperature control modules to stove tail, different thermal modules controls the temperature of boiler tube different zones.Work 5 different temperature can be set in skill, and forming thermograde between this 5 temperature can (temperature difference).
3rd, low temperature depositing is carried out using a small amount of multiple principle, had little time because being disposably passed through excessive doped source Reaction can all be taken away by exhausting completely, can be with using depositing twice and adding a step stabilizing step among deposition process twice Make the P of generation2O5/B2O3Continue to react with Si.
Specifically, in low temperature depositing, when doped source is phosphorus source, POCl3 first resolves into PCl5, then PCl5With oxygen Solid/liquid/gas reactions, produce P2O5.After TongYuan terminates, a large amount of POCl3 gases in boiler tube also be present, at this time add stable step, after It is continuous to be passed through oxygen, it is allowed to react away completely, purpose is exactly to consume unnecessary phosphorus source, and uses Multiple depositions, and centre adds steady The uniformity of deposition can be improved by determining step.When doped source is boron source, Boron tribromide and oxygen reaction, B is produced2O3.Work as TongYuan A large amount of Boron tribromide gases after end, in boiler tube also be present, at this time add stable step, continue to be passed through oxygen, be allowed to completely anti- It should fall, purpose is exactly to consume unnecessary boron source, and uses Multiple depositions, and centre, which adds stabilizing step, can improve the equal of deposition Even property.
4th, being rapidly heated can make each warm area quickly reach identical temperature, then carry out high temperature propulsion together, ensure knot It is deep consistent as far as possible.
5th, high temperature knot can be controlled with passage time, can also pass through temperature control；Time is longer, and junction depth is deeper, temperature Higher, junction depth is also deeper.
The present invention by depositing twice so that doping is consistent, consistent by junction depth, you can ensures doping curve almost one Cause, so as to ensure that battery electrical property parameter is consistent, and then improve component CTM.
The technical principle of the present invention is described above in association with specific embodiment.These descriptions are intended merely to explain the present invention's Principle, and limiting the scope of the invention can not be construed in any way.Based on explanation herein, the technology of this area Personnel would not require any inventive effort the other embodiments that can associate the present invention, and these modes are fallen within Within protection scope of the present invention.

Claims (10)

  1. A kind of 1. method for controlling doping curve conformity, it is characterised in that comprise the following steps：
    Stepped depositions, in the case where stove tail has thermograde to fire door, it is passed through nitrogen, oxygen, doped source and carries out pre-deposition.
  2. 2. according to the method for claim 1, it is characterised in that stepped depositions walk including low temperature depositing twice, each low temperature Deposition steps are：
    In the case where stove tail has thermograde to fire door, 6000~10000sccm of nitrogen is passed through, oxygen 500~ 1500sccm, 1500~2500sccm of source flux is adulterated, carry out pre-deposition, the time is 300~500S.
  3. 3. according to the method for claim 2, it is characterised in that first time low temperature depositing step after, second of low temperature depositing Also include before step：
    Stable step for the first time, after low temperature is passed through doped source, continues to be passed through 500~1500sccm of oxygen, consumes previous low temperature depositing Walk remaining doped source.
  4. 4. according to the method for claim 2, it is characterised in that also include after second of low temperature depositing step：
    Second of stable step, after low temperature is passed through doped source, continues to be passed through 500~1500sccm of oxygen, time low temperature depositing after consumption Walk remaining doped source.
  5. 5. according to the method described in any one of Claims 1 to 4, it is characterised in that doped source is phosphorus source or boron source.
  6. 6. according to the method for claim 5, it is characterised in that thermograde is：
    When doped source is phosphorus, temperature gradually rises in the range of 775~795 DEG C from stove tail to fire door；
    When doped source is boron, temperature gradually rises in the range of 990~1010 DEG C from stove tail to fire door.
  7. 7. according to the method for claim 5, it is characterised in that also include before stepped depositions：
    Enter boat step, silicon carbide paddle, which carries, to be filled the quartz boat of silicon chip and enter boiler tube；
    Heating step, under the atmosphere for being passed through nitrogen, boiler tube heating；
    Oxidation step, is passed through nitrogen and oxygen, carries out oxidation pre-treatment to silicon chip surface, forms one layer of thin oxide layer.
  8. 8. according to the method for claim 7, it is characterised in that
    When doped source is phosphorus,
    Enter boat step, temperature be 760~800 DEG C, the condition that nitrogen flow is 8000~12000sccm, the time is 700~900S Lower progress；
    Heating step, in the case where nitrogen flow is 8000~12000sccm atmosphere, boiler tube is warming up to 760~800 DEG C, the time 400 ~800S；
    Oxidation step, is passed through 6000~10000sccm nitrogen and 1500~2500sccm oxygen, the time is 500~700S；
    When doped source is boron,
    Enter boat step, temperature be 960~1000 DEG C, the bar that nitrogen flow is 8000~12000sccm, the time is 700~900S Carried out under part；
    Heating step, in nitrogen flow under 8000~12000sccm atmosphere, boiler tube is warming up to 960~1000 DEG C, the time is 400~800S；
    Oxidation step, is passed through 6000~10000sccm nitrogen and 1500~2500sccm oxygen, the time is 500~700S.
  9. 9. according to the method for claim 5, it is characterised in that also include after stepped depositions：
    Heat up knot step, and diffusion furnace is rapidly heated to design temperature, under the temperature conditionss, carries out knot processing, makes silica glass Being spread into silicon in layer；
    Cooling annealing walks, and after the completion of knot, under conditions of hyperoxia, starts slow cooling；
    Go out boat step, after cooling terminates, quartz boat outlet pipe, diffusion terminates.
  10. 10. according to the method for claim 9, it is characterised in that
    When doped source is phosphorus,
    Heating knot step includes：
    Be rapidly heated step, and in the case where nitrogen flow is 8000~12000sccm atmosphere, diffusion furnace is rapidly heated to the high temperature of setting Temperature, the high-temperature temperature being rapidly heated in step are 800~880 DEG C, and the heating-up time is 100~500S；
    High temperature knot walks, and under the high temperature conditions, carries out knot processing, the doped source in silica glass layer is spread into silicon；High temperature Knot step in high-temperature temperature and be rapidly heated step in high-temperature temperature it is identical, high temperature knot step in the knot time be 400~ 800S；
    700~740 DEG C are cooled in cooling annealing step；
    When doped source is boron,
    Heating knot step includes：
    Be rapidly heated step, and in the case where nitrogen flow is 8000~12000sccm atmosphere, diffusion furnace is rapidly heated to the high temperature of setting Temperature, the high-temperature temperature being rapidly heated in step are 100~1080 DEG C, and the heating-up time is 100~500S；
    High temperature knot walks, and under the high temperature conditions, carries out knot processing, the doped source in silica glass layer is spread into silicon；High temperature Knot step in high-temperature temperature and be rapidly heated step in high-temperature temperature it is identical, high temperature knot step in the knot time be 400~ 800S；
    900~940 DEG C are cooled in cooling annealing step.
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