CN105200381A - Anode field assisted magnetron sputtering coating apparatus - Google Patents
Anode field assisted magnetron sputtering coating apparatus Download PDFInfo
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- CN105200381A CN105200381A CN201510704469.8A CN201510704469A CN105200381A CN 105200381 A CN105200381 A CN 105200381A CN 201510704469 A CN201510704469 A CN 201510704469A CN 105200381 A CN105200381 A CN 105200381A
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Abstract
The invention belongs to the field of physical vapor deposition, and discloses an anode field assisted magnetron sputtering coating apparatus. The apparatus comprises a vacuum chamber, a workpiece disk and at least two magnetron sputtering targets whose power is supplied by a power supply I, a water-cooled anode whose power is supplied by a power supply II is arranged between the two adjacent magnetron sputtering targets, and a closed-loop structure is formed in the vacuum chamber. By combining the magnetron sputtering targets and the water-cooled anode which posses a same height, the ionization rate is enhanced and also the chamber plasma uniformity is improved.
Description
Technical field
The invention belongs to art of physical vapor deposition, relate to a kind of ionization level and the plasma uniformity that strengthen space plasma, and then improve the auxiliary magnetic control sputtering film plating device of anodic field of film bonding force and performance, may be used for the growth of vacuum metal film, nitride film and carbide thin film.
Background technology
Magnetron sputtering is that electronics accelerates to fly in the process of substrate to collide with ar atmo under the effect of electric field, and ionize out a large amount of argon ions and electronics, electronics flies to substrate.Argon ion accelerates to bombard target under the effect of electric field, sputters a large amount of target atom, is deposited on film forming on substrate in neutral target atom (or molecule).
In Industrial processes, in the process of workpiece to be plated door t door, plasma cleaning, metal bonding coating and functional layer three basic steps be experienced.The ion source that has conventional at present cleans, and is divided into hall ion source, linear ion source, hollow cathode ion source etc., and wherein first two multimode ionization source is used for optical coating and polymer surfaces coating film treatment, less demanding to bonding force.Hollow cathode ion source is used for instrument plated film, but its operating distance is short, and needs electromagnetic field to assist, and therefore equipment generally can not more than the size of 700mm.Magnetron sputtering is owing to sharply declining away from ionization level during target, and often voidage is large, especially when batch plated film for the film of preparation, workpiece can experience the wave change of ionization level, near target, film quality is high, poor away from target mass, is therefore necessary the space ionization level improving magnetron sputtering.
The method of current raising space ionization level has closed field magnetron sputtering, as the closed field magnetron sputtering (British Patent No. 2258343, U.S. Patent number 5554519, european patent number 0521045) of Teer company of Britain, make use of the magnetic field of non-balance magnetically controlled sputter extension, by reasonably designing, adjacent magnetic field is closed, form electron channel, electronics prolongs these magnetic line of force and rotates, and improves ionization level with neutral collisions.
At home, patent of invention ZL201210161364.9, patent 201210474290.4, patent 201220233276.0 discloses the design of closed field magnetic control sputtering device, almost with Teer company.Patent ZL201220209547.9 has then done amendment on this basis, and the column magnetic control adopting inner ring to place forms closed magnetic field; Patent ZL98120365.5 discloses the closed magnetic control sputtering device in a kind of concentricity magnetic field of non-equilibrium target, and the magnetic field that center is placed and target reversing magnetic field symmetry, magnetic line of force, through workpiece to be plated, greatly improves the ionization level of coating film area.Dalian University of Science & Engineering discloses a kind of plasma intensified non-balance magnetically controlled sputter method (ZL01116734.3), utilizes microwave ion source to assist the ionization level improving magnetron sputtering.
The shortcoming of above-mentioned technology must reach the closed object in magnetic field by close magnetic controlling target, and equipment is complicated, high expensive; Microwave plasma source is difficult to realize large-area assistant depositing.
Summary of the invention
The object of the invention is to solve that coating quality in processes of physical vapor deposition is poor, the inhomogenous problem of film proposes the auxiliary magnetic control sputtering film plating device of a kind of anodic field.The present invention is by strengthening the ionization level of space plasma and plasma uniformity and then improving film bonding force and performance, and anode is by the copper coin of one piece of water-cooled with provide the device of power supply to form to copper coin, is suitable for the deposition of large area film.
The auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate and at least two magnetron sputtering targets of being powered by power supply I, it is characterized in that between adjacent magnetron sputtering target, be provided with the water-cooled anode of being powered by power supply II, in vacuum cavity, form closed-loop structure.
Described magnetron sputtering target is rectangle or column spinner target.
Described magnetron sputtering target is metal or nonmetal target.
Described power supply I is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
Described anode brings the cold copper coin structure of air water into.
The direct-flow positive voltage of described power supply II to be grid bias power supply or voltage be 50-500V.
Described anode and the contour layout of magnetron sputtering target.
The electronics that the present invention is excited by magnetron sputtering flies to anode under positive electric field effect, with neutral collisions aggravation ionization level in flight course, between anode and magnetic controlling target, form ionic channel thus, reach the object improving ionization level and homogenize cavity plasma body.
The present invention compared with prior art has the following advantages:
1, the present invention is by contour water-cooled anode and magnetron sputtering target compound, improves cavity plasma uniformity while enhancing ionization level.
2, the use of water-cooled anode of the present invention reduces the necessary adjacent target layout of closed field magnetic control, improves space availability ratio and plated film efficiency.
3, water-cooled anode of the present invention also can be used in conjunction with grid bias power supply the effect reaching PECVD plated film.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
In figure: 1-magnetron sputtering target, 2-anode, 3-power supply I, 4-workpiece plate, 5-power supply II.
Embodiment
Embodiment 1
As shown in Figure 1, the auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate 4 and at least two magnetron sputtering targets 1 of being powered by power supply I 3, between adjacent magnetron sputtering target 1, be provided with the water-cooled anode 2 of being powered by power supply II 5, in vacuum cavity, form closed-loop structure.
Magnetron sputtering target 1 is rectangle or column spinner target.
Magnetron sputtering target 1 is metal or nonmetal target.
Power supply I 3 is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
Anode 2 brings the cold copper coin structure of air water into.
The direct-flow positive voltage of power supply II 5 to be grid bias power supply or voltage be 50-500V.
Anode 2 and the contour layout of magnetron sputtering target 1.
Embodiment 2
The auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate 4 and at least two magnetron sputtering targets 1 of being powered by power supply I 3, between adjacent magnetron sputtering target 1, be provided with the water-cooled anode 2 of being powered by power supply II 5, in vacuum cavity, form closed-loop structure.Wherein rectangle magnetron sputtering target 1 size 200 × 800mm
2, adopt multiple track water-cooled to arrange, the design of band additional-air inlet; Water-cooled anode 2 size 100 × 800mm
2, hollow water-cooled cathode design, band gas distribution structure; Power supply I 3 adopts 10KW direct current pulse power source or DC power supply; Water-cooled anode 2 adopts 3KW direct-flow positive voltage; Low temperature molecular pump system is adopted to vacuumize the maintenance with air pressure during plated film.
Embodiment 3
The auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate 4 and at least two magnetron sputtering targets 1 of being powered by power supply I 3, between adjacent magnetron sputtering target 1, be provided with the water-cooled anode 2 of being powered by power supply II 5, in vacuum cavity, form closed-loop structure.Wherein rectangle magnetron sputtering target 1 size 100 × 800mm
2, adopt multiple track water-cooled to arrange; Water-cooled anode 2 size 100 × 800mm
2, hollow water-cooled cathode design, band gas distribution structure; Power supply I 3 adopts 10KW bipolar pulse power supply or bipolar high power pulsed source; Water-cooled anode 2 adopts 3KW direct-flow positive voltage; Low temperature molecular pump system is adopted to vacuumize the maintenance with air pressure during plated film.
Embodiment 4
The device shown in Fig. 1 is adopted to realize the preparation of high-bond titanium nitride membrane:
The pure and fresh drying of sample, be evacuated to 1.0 × 10
-4pa, starts plated film; Bias voltage 1000V, dutycycle 0.4, anode positive voltage 500V, passes into argon gas 0.8Pa, cleans 10 minutes; Open 2 groups of magnetron sputtering titanium targets, bias voltage 800V, dutycycle 0.4, anode positive voltage 500V, passes into argon gas 0.8Pa, bombards 10 minutes; Bias voltage is down to 200V, anode positive voltage 150V, argon gas 0.5Pa, nitrogen 0.3Pa, deposits 2 hours
;room temperature to be down to takes out sample test, and bonding force is 62N.
Claims (7)
1. the auxiliary magnetic control sputtering film plating device of anodic field, comprise vacuum cavity, workpiece plate (4) and at least two magnetron sputtering targets (1) of being powered by power supply I (3), it is characterized in that between adjacent magnetron sputtering target (1), be provided with the water-cooled anode (2) of being powered by power supply II (5), in vacuum cavity, form closed-loop structure.
2. device as claimed in claim 1, is characterized in that described magnetron sputtering target (1) is for rectangle or column spinner target.
3. device as claimed in claim 1, is characterized in that described magnetron sputtering target (1) is for metal or nonmetal target.
4. device as claimed in claim 1, is characterized in that described power supply I (3) is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
5. device as claimed in claim 1, is characterized in that described anode (2) brings the cold copper coin structure of air water into.
6. device as claimed in claim 1, is characterized in that described power supply II (5) to be grid bias power supply or voltage is the direct-flow positive voltage of 50-500V.
7. device as claimed in claim 1, is characterized in that described anode (2) and magnetron sputtering target (1) contour layout.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510704469.8A CN105200381B (en) | 2015-10-27 | 2015-10-27 | The auxiliary magnetic control sputtering film plating device of anodic field |
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| CN201510704469.8A CN105200381B (en) | 2015-10-27 | 2015-10-27 | The auxiliary magnetic control sputtering film plating device of anodic field |
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| CN105200381A true CN105200381A (en) | 2015-12-30 |
| CN105200381B CN105200381B (en) | 2018-06-12 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108570642A (en) * | 2018-07-25 | 2018-09-25 | 衡阳舜达精工科技有限公司 | A kind of C film low temperature controllable deposition method and device |
| CN108611619A (en) * | 2018-07-25 | 2018-10-02 | 衡阳舜达精工科技有限公司 | Magnetron sputtering/microwave surface wave depositing system |
| CN112713212A (en) * | 2021-01-28 | 2021-04-27 | 湖南红太阳光电科技有限公司 | HJT battery based on double-layer transparent conductive oxide film and preparation method thereof |
| CN114318269A (en) * | 2022-01-05 | 2022-04-12 | 中国科学院兰州化学物理研究所 | Device and method for sputtering and depositing metal on surface of magnetic powder material |
| CN115522174A (en) * | 2022-11-29 | 2022-12-27 | 中科纳微真空科技(合肥)有限公司 | Magnetic field adjustable active anode and magnetron sputtering equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111411337B (en) * | 2020-03-31 | 2021-05-04 | 中国科学院兰州化学物理研究所 | Excitation modulation anode auxiliary magnetron sputtering ion coating system |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108570642A (en) * | 2018-07-25 | 2018-09-25 | 衡阳舜达精工科技有限公司 | A kind of C film low temperature controllable deposition method and device |
| CN108611619A (en) * | 2018-07-25 | 2018-10-02 | 衡阳舜达精工科技有限公司 | Magnetron sputtering/microwave surface wave depositing system |
| CN108570642B (en) * | 2018-07-25 | 2024-05-03 | 衡阳舜达精工科技有限公司 | Low-temperature controllable deposition method and device for carbon film |
| CN112713212A (en) * | 2021-01-28 | 2021-04-27 | 湖南红太阳光电科技有限公司 | HJT battery based on double-layer transparent conductive oxide film and preparation method thereof |
| CN114318269A (en) * | 2022-01-05 | 2022-04-12 | 中国科学院兰州化学物理研究所 | Device and method for sputtering and depositing metal on surface of magnetic powder material |
| CN114318269B (en) * | 2022-01-05 | 2022-10-28 | 中国科学院兰州化学物理研究所 | Device and method for sputtering and depositing metal on surface of magnetic powder material |
| CN115522174A (en) * | 2022-11-29 | 2022-12-27 | 中科纳微真空科技(合肥)有限公司 | Magnetic field adjustable active anode and magnetron sputtering equipment |
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