CN211367703U - Magnetron sputtering coating machine for depositing DLC film - Google Patents
Magnetron sputtering coating machine for depositing DLC film Download PDFInfo
- Publication number
- CN211367703U CN211367703U CN201921085726.4U CN201921085726U CN211367703U CN 211367703 U CN211367703 U CN 211367703U CN 201921085726 U CN201921085726 U CN 201921085726U CN 211367703 U CN211367703 U CN 211367703U
- Authority
- CN
- China
- Prior art keywords
- magnetron sputtering
- target
- coating
- coating machine
- coating chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model relates to a magnetron sputtering coating machine for depositing DLC film. A plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets are arranged on the periphery of the coating chamber, the magnetic polarities of two adjacent targets are arranged in a reverse direction, and a closed magnetic field is formed in the coating chamber. The target material components of the multiple rotary target tubular column unbalanced magnetron sputtering targets comprise a metal target, a compound target and a graphite target. The coating chamber is also provided with a cathode arc source and a water-cooled anode matched with the cathode arc source. Before coating, the argon gas is ionized by the electron flow in the arc plasma generated by the cathode arc source, and the workpiece is cleaned by the high-density argon ion flow. During film coating, a transition layer film is firstly coated by using a metal target and a compound target, and then a DLC film is coated by using a graphite target. The utility model is suitable for a plate composite construction's DLC hard coating on wear-resisting part. The service life of basic wear-resistant parts in high-end processing industry is prolonged.
Description
Technical Field
The invention belongs to vacuum coating equipment. In particular to a magnetron sputtering coating machine for depositing DLC film.
Background
Among the numerous thin film products obtained in the field of vacuum coating, Diamond-Like Carbon (abbreviated as DLC) films with many excellent properties are widely applied in many fields of high and new technology products. DLC has the characteristics of high hardness and low friction coefficient, so that great progress is made in improving the performance of tools and dies and wear-resistant parts in recent years. Many coating techniques have emerged to deposit DLC.
These coating techniques and machines include: plasma Enhanced Chemical Vapor Deposition (PECVD), planar unbalanced closed magnetic field magnetron sputtering coating, small circular target cathode arc ion coating, magnetic deflection type magnetic filtration cathode arc ion coating, HiPIMS (high plasma enhanced chemical vapor deposition) and planar unbalanced magnetron sputtering coating.
The Dutch Hauzer company deposits the DLC wear-resistant coating by adopting a magnetron sputtering coating technology of a plane unbalanced closed magnetic field and matching with a PECVD technology, and the technical route is that firstly, a plane unbalanced magnetron sputtering target is used for plating a CrN and WC transition layer film, and then the PECVD technology is used for depositing the DLC film to obtain the DLC film with excellent performance.
The magnetron sputtering target comprises a planar target and a columnar target. The magnetron structures used in the magnetron sputtering targets of the two shapes are a balanced magnetic field and an unbalanced magnetic field.
The N, S poles of the balanced magnetic field are all made of strong magnetic steel neodymium iron boron, and the magnetic polarity of the surface of the target tube can be N-S-N or S-N-S arrangement. Because the magnetic field is strong, the magnetic field lines are tightly confined in front of the target surface. The magnetic control structure in the arrangement enables the magnetic polarities of the adjacent outer sides of the two magnetic control sputtering targets to be the same, namely N or S, and the magnetic polarities of the two targets to be the same and mutually exclusive, so that no magnetic line of force is connected between the two adjacent targets. That is, there is no magnetic field between two adjacent targets to confine electrons, and electrons can escape from between the two targets to the wall of the coating chamber serving as the anode. A great deal of electrons in the coating chamber do not collide with argon gas, and do not collide with atoms of the metal film layer to be ionized and run away, so that the electrons cannot be fully utilized. The plasma density in the coating chamber is low, the argon ions are less, and the deposition rate is low; the film atom ionization rate is low, and the film is not easy to react to generate a compound film, which is a defect of the balanced magnetron sputtering coating technology.
The non-equilibrium magnetic field is composed of strong magnetic steel neodymium iron boron and a weak magnet. The magnetic polarity arrangement of the target tube surface may also be N-S-N, or S-N-S. The magnetic lines of force of the unbalanced magnetic field can be pushed forward and expanded to the periphery, and the magnetic lines of force can be expanded far away from the periphery of the target. Teer corporation and Hauzer corporation of the Netherlands in the UK reverse the magnetic polarities of two adjacent planar unbalanced magnetron sputtering targets, with the target surfaces having magnetic polarities N-S-N and S-N-S. The magnetic polarities of the two targets close to the outer sides are opposite, one side is N, the other side is S, the two targets can attract each other, and magnetic lines of force are connected with each other. A magnetic field exists between the two targets, and the blocking electrons cannot run to the wall of the coating chamber but do rotary motion between the two targets. The device increases the impact ionization with more argon gas, obtains more argon ions to bombard the sputtering target material, and improves the deposition rate; electrons and more metal film atoms are increased to generate collision ionization, more metal ions are obtained, the activity of film particles is improved, and the reaction is easier to generate a compound film.
A plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets with reversely arranged magnetic polarities are arranged in the coating chamber, so that a closed magnetic field with all crossed magnetic lines of force is formed in the coating chamber, electrons are constrained in the coating chamber to continuously rotate, the collision probability of metal film atoms is increased, the metal ionization rate is improved, the deposition rate of a magnetron sputtering coating technology is favorably improved, and a compound film is easily obtained.
Teer company and Hauzer company in the Netherlands install 4 or 6 plane unbalanced magnetron sputtering targets in a coating chamber, and the magnetic polarities of two adjacent targets are arranged in a reverse direction, so that a closed magnetic field is formed in the coating chamber. The plasma density in the coating chamber is obviously improved. The method is mainly applied to the deposition of the DLC film.
Before plating the DLC film on the surface layer, Hauzer company deposits enough thick transition layers CrN and WC by using a plane unbalanced magnetron sputtering target, and then C is introduced by using a PECVD technology2H2、CH4And (4) plating a DLC film by gas. Finally, the composite wear-resistant coating with high hardness, low friction coefficient and good binding force is obtained. Both magnetron sputtering and PECVD can plate hard film below 200 ℃, so that CrN-WC-DLC composite wear-resistant coating can be plated on wear-resistant parts in engines of automobiles and ships. So as to prolong the service life of the parts such as the crankshaft, the connecting rod, the gear and the like which are tempered at the low temperature of below 200 ℃.
The Teer company in UK deposits DLC (Diamond-like carbon) film and GLC (graphite-like carbon) film directly on a graphite target in a plane unbalanced closed magnetron sputtering coating machine. Self-lubricating wear-resistant coatings are deposited on tools, dies and wear-resistant parts. That is to say, only a film plating machine for depositing the DLC composite wear-resistant coating by using the magnetron sputtering film plating technology of a plane unbalanced closed magnetic field exists at home and abroad, and a film plating machine for plating the CrN-WC-DLC composite wear-resistant coating by using a magnetron sputtering film plating machine of a rotary target tubular type column unbalanced closed magnetic field does not exist.
Disclosure of utility model patent
The invention aims to provide a magnetron sputtering coating machine for depositing DLC films, which comprises a coating chamber, a magnetron sputtering target, a workpiece rotating stand, a cathode arc source and an anode matched with the cathode arc source.
The magnetron sputtering coating machine is a magnetron sputtering coating machine of a rotary target tubular column-shaped non-balanced closed magnetic field. A plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets are arranged in the coating chamber, the magnetic polarities of two adjacent targets are arranged in a reverse direction, and a closed magnetic field is formed in the whole coating chamber.
The target tube of the rotary target tube type columnar unbalanced magnetron sputtering target comprises a metal target, a compound target and a graphite target.
And a cathode arc source and a water-cooling anode matched with the cathode arc source are also arranged in the coating chamber of the magnetron sputtering coating machine and used as a cleaning source for cleaning workpieces by arc discharge argon ions.
Before coating, arc discharge is generated between a cathode arc source and an anode after an arc power supply is switched on, electron flow in generated arc plasma ionizes argon, and a workpiece is cleaned by high-density argon ions. Because the density of the argon ion flow is high, the bias voltage of the workpiece is less than 200V, and the workpiece is cleaned by the argon ion flow with low energy and high density, so that a good cleaning effect can be obtained. Has great significance for improving the film-substrate binding force of the magnetron sputtering coating product. The technology of using arc discharge argon ion to wash the work piece, the inventor has applied for utility model patent technology, and the patent number is: ZL 201720302520.7, 201721044882.7, 201820436472.5.
In the magnetron sputtering coating machine, because a plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets are arranged on the periphery of the coating chamber, the magnetic polarities of two adjacent column-shaped unbalanced magnetron sputtering targets are arranged in a reverse direction by changing the directions of the magnetic polarities of the two adjacent column-shaped unbalanced magnetron sputtering targets, so that the magnetic polarities of the two adjacent column-shaped magnetron sputtering targets are mutually connected, and a closed magnetic field is formed in the whole coating chamber. Electrons rotate under the constraint of an electromagnetic field to generate more impact ionization, more argon ions are obtained to improve the deposition rate, more metal film ions are obtained to improve the metal ionization rate, and the compound film is favorably obtained. The utility model discloses a magnetron sputtering coating machine utility model patent of rotating target tubular column unbalanced closed magnetic field has been applied for in Wangfuzhen, patent number: ZL 201720302687.3. Used for depositing decorative products such as TiN, TiCN, CrN and the like.
The magnetron sputtering coating machine of the rotary target tubular column-shaped unbalanced closed magnetic field is characterized in that: the magnetic field in the film coating chamber exists in a closed magnetic field mode all the time, so that no matter which columnar magnetron sputtering target is opened for coating, a large amount of collision ionization can be generated because the electron current continuously rotates. The configuration probability is larger than that of the columnar balance magnetron sputtering target, and the plasma density in the coating chamber is also large. The high argon ion density can improve the sputtering rate, the high metal ion density can improve the metal ionization rate, and the reaction is favorable for generating a compound film layer.
The utility model discloses a compare with the magnetron sputtering coating machine in the unbalanced closed magnetic field of mounting surface, the tubular column form unbalanced magnetron sputtering target of target soon has simple structure, simple to operate, and the target utilization ratio is high, is difficult to produce advantages such as target poisoning.
In the magnetron sputtering coating machine, the target material components of the columnar target are Cr target, WC target, graphite target and the like. Cr targets and WC targets are used for plating a CrN and WC transition layer between the base material of the part and DLC, which is beneficial to growing a DLC film with high quality. The purpose of mounting the graphite target is to plate a DLC film. DLC is a self-lubricating film with high hardness and low friction coefficient.
The patent is a new machine type of multilayer composite hard film layer plated with CrN, WC transition layer and DLC in closed magnetic field generated by columnar unbalanced magnetron sputtering target. The final film obtained is DLC and has the characteristics of high hardness and low friction coefficient. Can be applied to prolonging the service life of tools, dies and wear-resistant parts. The method has great significance for improving the product level of high-end processing industries such as automobiles, airplanes, machine tools and the like in China, and can improve the competitiveness of the high-end processing industries in China internationally.
Drawings
The following detailed description is made by way of example only with reference to the accompanying drawings
The utility model relates to a magnetron sputtering coating machine for depositing DLC film. A plurality of rotary target tube type column unbalanced magnetron sputtering targets are arranged in the plating film, the magnetic polarities of two adjacent column magnetron sputtering targets are arranged in a reverse direction, and the target material components of the target tubes are Cr targets, WC targets, graphite targets and the like. The utility model discloses a improve membrane base cohesion, still dispose and carry out the abluent cathodic arc source of arc discharge argon ion and the water-cooling positive pole corresponding with cathodic arc source to the work piece.
FIG. 1 is a schematic top sectional view of a magnetron sputtering coater for depositing DLC film. Fig. 2 is a front sectional view thereof. A plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets are arranged along the periphery of the coating chamber, a workpiece rotating stand, a column-shaped cathode arc source is arranged in the middle of the coating chamber, a small circular cathode arc source is arranged on the wall of the coating chamber, and a water-cooled anode corresponding to the cathode arc source is specially arranged.
In fig. 1: 1-coating chamber, 2-spin target tubular column unbalanced magnetron sputtering target, 3-workpiece rotating stand, 4-small circular cathode arc source, 5-column cathode arc source, 6-coating chamber periphery water-cooled anode, and 7-coating chamber interior water-cooled anode.
Detailed Description
The invention aims to provide a magnetron sputtering coating machine for depositing a DLC film. And a plurality of rotary target tubular column unbalanced magnetron sputtering targets are arranged on the periphery of the film coating chamber. The magnetic polarities of two adjacent targets are arranged in opposite directions, and a closed magnetic field is formed in the coating chamber.
The magnetron sputtering target comprises a target tube, a magnetron structure arranged in the target tube and a target end socket used for assembling the target tube and the magnetron structure, wherein the target tube can rotate, and the magnetron structure is fixed to form the cylindrical magnetron sputtering target in a rotary target tube type.
The magnetic control structure arranged in the target tube is an unbalanced magnetic control structure and comprises strong magnetic steel and a weak magnetic body connected with the strong magnetic steel, the magnetic polarity of the magnetic body material can be strong in the middle and weak at two sides or weak in the middle and strong at two sides, and the magnetic polarity on the surface of the target tube is in N-S-N, S-N-S distribution.
The target material components of the plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets arranged in the coating chamber are Cr targets, WC targets, graphite targets and the like. When coating, firstly starting the Cr target and the WC target to plate the CrN and WC transition layer, and then starting the graphite target to plate the DLC film. The quantity proportion of different targets is determined according to the process requirement.
When the CrN and WC transition layers are deposited by using the Cr target and the WC target, the magnetron sputtering coating is carried out in glow discharge, and the density of plasma is low, so the bonding force between the transition layer film and the part substrate is not ideal. Therefore, the invention is also provided with an arc discharge argon ion cleaning source in the film plating machine. The cathode in the specific configuration is a small circular cathode arc source or a cylindrical arc source and is provided with a corresponding water-cooled anode. Specific positions have three layouts: 1. two cylindrical arc sources which are mutually a cathode and an anode are arranged in the coating chamber; 2. a columnar cathode arc source arranged in the coating chamber is a cathode, and a water-cooled anode is arranged at the periphery of the coating chamber; 3. the small circular cathode arc source on the wall of the coating chamber is the cathode, and the water-cooled anode is arranged in the middle of the coating chamber. Can be selected according to different products. After the arc power is turned on, the electron flow in the arc plasma generated ionizes the argon gas, and the workpiece is cleaned with high density argon ions. Compared with the prior art, the argon ion density is higher when the workpiece is cleaned by glow discharge argon ions, and the bombardment cleaning effect is good; the bombardment energy of the titanium ion flow emitted by a cathode arc source is lower, the damage to the surface of the part is small, large melting point particles are not generated, and the surface brightness of the part is good.
The coating machine can be in a vertical type, a horizontal type, a single machine or a continuous production line.
The coating chamber can be circular, polygonal or processed into an ear chamber shape.
The coating machine can be provided with a vacuum-pumping system, an air inlet system, a workpiece rotating frame and a workpiece heating system.
The coating machine is provided with a magnetron sputtering power supply and a workpiece bias power supply. The power supply can be a direct current power supply or an alternating current power supply.
Example 1, referring to the drawings
The attached drawing is a structural schematic diagram of a magnetron sputtering coating machine for depositing DLC films. Fig. 1 is a top sectional view, and fig. 2 is a longitudinal sectional view. The configuration chosen for example 1 is: 1-coating chamber, 3-workpiece rotating stand, 2-rotary target tubular column unbalanced magnetron sputtering target and 5-coating chamber, and two column cathode arc sources are arranged in the middle of the chamber.
The specific implementation flow of the embodiment 1 is as follows: firstly, connecting a rotary target tube type columnar unbalanced magnetron sputtering target 2 arranged on the periphery of a coating chamber 1 with a magnetron sputtering power supply; the workpiece 3 is connected with the negative pole of the bias power supply, and the coating chamber is connected with the positive pole of the bias power supply; the two middle columnar cathode arc sources 5 are respectively connected with the anode and the cathode of the arc source.
Cleaning a workpiece before coating: argon gas is firstly introduced, and a bias power supply is switched on. After the arc power supply is started, the two column arc sources generate arc discharge, the electron flow in the arc plasma ionizes argon, and the workpiece is bombarded and cleaned by the argon ions. And after cleaning, the arc power supply is turned off.
In the coating process, firstly coating a transition layer film: and starting the magnetron sputtering Cr target and the WC target in sequence, and plating a CrN and WC transition layer. And after the preset film thickness is reached, the power supply of the magnetron sputtering target is closed.
And finally plating a DLC film: and starting the magnetron sputtering graphite target to plate the DLC film. Finally obtaining the CrN + WC + DLC multilayer film.
Example 2, referring to the drawings
The attached drawing is a schematic structural diagram of a magnetron sputtering coating machine for depositing DLC films. Fig. 1 is a top sectional view, and fig. 2 is a longitudinal sectional view. The configuration of example 2 is different from that of example 1 in that the workpiece cleaning stage is configured by selecting a columnar cathode arc source 5 in the middle of the coating chamber 1 and a water-cooled anode 6 around the coating chamber.
Cleaning a workpiece before coating: argon gas is firstly introduced, and a bias power supply is switched on. After the arc power supply is started, arc discharge is generated between the column arc source in the middle of the coating chamber and the water-cooled anode at the periphery of the coating chamber, electron current in high-density arc plasma is generated to ionize argon, and the workpiece is cleaned by argon ions. And after cleaning, the arc power supply is turned off.
The process flow of the transition layer film plating and the DLC film plating was the same as in example 1.
Example 3, referring to the drawings
The attached drawing is a schematic structural diagram of a magnetron sputtering coating machine for depositing DLC films. Fig. 1 is a top sectional view, and fig. 2 is a longitudinal sectional view. Example 3 differs from examples 1 and 2 in that the workpiece cleaning stage is arranged by selecting a small circular cathode arc source 4 on the wall of the coating chamber 1 and a water-cooled anode 7 in the coating chamber.
Cleaning a workpiece before coating: argon gas is firstly introduced, and a bias power supply is switched on. After the arc source power supply is started, arc discharge is generated between a small circular cathode arc source on the wall of the coating chamber and a water-cooled anode inside the coating chamber, high-density arc plasma is generated, the electron flow ionizes argon, and the workpiece is bombarded and cleaned by argon ions. And after cleaning, the arc power supply is turned off.
The process flow of the transition layer film plating and the DLC film plating was the same as in example 1.
Claims (11)
1. A magnetron sputtering film plating machine for depositing DLC film comprises a film plating chamber, a magnetron sputtering target, a workpiece rotating stand, a cathode arc source and an anode matched with the cathode arc source, and is characterized in that:
the magnetron sputtering coating machine is a magnetron sputtering coating machine of a rotary target tubular column-shaped non-balanced closed magnetic field;
the target material of the plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets arranged in the magnetron sputtering coating machine is provided with a graphite target.
2. The magnetron sputtering coating machine of claim 1, characterized in that: a plurality of rotary target tubular column-shaped unbalanced magnetron sputtering targets are arranged in the coating chamber, the magnetic polarities of two adjacent targets are arranged in a reverse direction, and a closed magnetic field is formed in the coating chamber.
3. The magnetron sputtering coating machine of claim 1, characterized in that: the target material of the plurality of rotary target tubular column unbalanced magnetron sputtering targets arranged in the coating chamber comprises a metal target, a compound target and a graphite target.
4. The magnetron sputtering coating machine of claim 1, characterized in that: the film coating chamber is provided with a small circular cathode arc source, a columnar cathode arc source and a water-cooled anode.
5. The magnetron sputtering coating machine according to claim 1 or 4, characterized in that: two columnar cathode power supply arc sources are arranged in the film coating chamber and used as cleaning sources for cleaning the workpiece.
6. The magnetron sputtering coating machine according to claim 1 or 4, characterized in that: and the columnar cathode arc source arranged in the middle of the coating chamber and the water-cooled anode at the periphery of the coating chamber are used as cleaning sources for cleaning the workpiece.
7. The magnetron sputtering coating machine according to claim 1 or 4, characterized in that: and a small circular cathode arc source arranged on the wall of the coating chamber and a water-cooled anode in the middle of the coating chamber are used as cleaning sources for cleaning the workpiece.
8. The magnetron sputtering coating machine of claim 1, characterized in that: the coating machine can be in a vertical type, a horizontal type, a single machine or a continuous production line.
9. The magnetron sputtering coating machine of claim 1, characterized in that: the coating chamber can be circular, polygonal or processed into an ear chamber shape.
10. The magnetron sputtering coating machine of claim 1, characterized in that: the coating machine can be provided with a vacuum-pumping system, an air inlet system, a workpiece rotating frame system and a heating system.
11. The coater as set forth in claim 1 wherein: the film plating machine is provided with a magnetron sputtering power supply and a workpiece pulse bias power supply, and can be a direct current power supply or an alternating current power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921085726.4U CN211367703U (en) | 2019-07-12 | 2019-07-12 | Magnetron sputtering coating machine for depositing DLC film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921085726.4U CN211367703U (en) | 2019-07-12 | 2019-07-12 | Magnetron sputtering coating machine for depositing DLC film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211367703U true CN211367703U (en) | 2020-08-28 |
Family
ID=72171932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921085726.4U Active CN211367703U (en) | 2019-07-12 | 2019-07-12 | Magnetron sputtering coating machine for depositing DLC film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211367703U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113337819A (en) * | 2021-07-08 | 2021-09-03 | 纳峰真空镀膜（上海）有限公司 | Coating equipment |
| CN114481071A (en) * | 2022-02-11 | 2022-05-13 | 松山湖材料实验室 | Film coating device and DLC film coating process |
-
2019
- 2019-07-12 CN CN201921085726.4U patent/CN211367703U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113337819A (en) * | 2021-07-08 | 2021-09-03 | 纳峰真空镀膜（上海）有限公司 | Coating equipment |
| CN114481071A (en) * | 2022-02-11 | 2022-05-13 | 松山湖材料实验室 | Film coating device and DLC film coating process |
| CN114481071B (en) * | 2022-02-11 | 2023-10-27 | 松山湖材料实验室 | Coating device and DLC coating process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109778136B (en) | Method for preparing diamond-like coating by adopting thermionic plasma technology | |
| US7790003B2 (en) | Method for magnetron sputter deposition | |
| CN206956141U (en) | A kind of magnetron sputtering coater | |
| US20090068450A1 (en) | Method and Apparatus for Multi-Cathode PVD Coating and Substrate with PVD Coating | |
| WO2013045454A3 (en) | Coating of substrates using hipims | |
| EP2122006B1 (en) | Methods and apparatus for forming diamond-like coatings | |
| JPS63303065A (en) | Surface treatment | |
| CN108374154B (en) | Diamond-like carbon coating preparation device with composite magnetic field and application thereof | |
| CN104561910A (en) | Plasma enhanced arc ion plating equipment and method for preparing precision coating | |
| CN108165925B (en) | Low negative bias high energy Ar+Method for improving performance of AlTiSiN coating by etching and cleaning | |
| CN211367703U (en) | Magnetron sputtering coating machine for depositing DLC film | |
| CN104213076A (en) | Method and equipment for preparing ultra-hard DLC coatings through PVD and HIPIMS | |
| CN105200381B (en) | The auxiliary magnetic control sputtering film plating device of anodic field | |
| CN110408889B (en) | Wear-resistant antifriction carbon-doped TiAlN nano multilayer hard film and preparation method thereof | |
| CN111519151A (en) | Multi-element hard coating and electromagnetic enhanced magnetron sputtering preparation process thereof | |
| CN111455336A (en) | Electromagnetic field enhanced magnetron sputtering device and method for preparing diamond-like carbon coating | |
| CN114481071B (en) | Coating device and DLC coating process | |
| US20120228124A1 (en) | Method of creating pvd layers using a cylindrical rotating cathode and apparatus for carrying out this method | |
| CN105441871A (en) | Method and device for industrial preparation of superhard DLC carbon coating through physical vapor deposition (PVD) and high power impulse magnetron sputter (HIPIMS) | |
| CN112210752A (en) | Magnetron sputtering technology for depositing DLC film and film coating machine | |
| CN102534514A (en) | Method for plating films of multi-arc ion plating | |
| CN102943240A (en) | Multifunctional plasma enhanced coating system | |
| US20120308810A1 (en) | Coated article and method for making the same | |
| CN204434722U (en) | A kind of plasma enhancing prepares the arc ion plating apparatus of fine layers | |
| CN102230156A (en) | Method for preparing composite hard coating on min-cutter and min-cutter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |