CN105200381B - The auxiliary magnetic control sputtering film plating device of anodic field - Google Patents
The auxiliary magnetic control sputtering film plating device of anodic field Download PDFInfo
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- CN105200381B CN105200381B CN201510704469.8A CN201510704469A CN105200381B CN 105200381 B CN105200381 B CN 105200381B CN 201510704469 A CN201510704469 A CN 201510704469A CN 105200381 B CN105200381 B CN 105200381B
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Abstract
The invention belongs to art of physical vapor deposition, disclose a kind of auxiliary magnetic control sputtering film plating device of anodic field, the device includes vacuum cavity, workpiece plate and at least two magnetic controlled sputtering targets powered by power supply I, the water cooling anode powered by power supply II is equipped between adjacent magnetic controlled sputtering target, closed loop configuration is formed in vacuum cavity.The present invention is compound by contour water cooling anode and magnetic controlled sputtering target, and cavity plasma uniformity is improved while enhancing ionization level.
Description
Technical field
The invention belongs to art of physical vapor deposition, are related to a kind of ionization level and plasma for enhancing space plasma
Uniformity, and then the auxiliary magnetic control sputtering film plating device of anodic field of film binding force and performance is improved, it is thin to can be used for vacuum metal
The growth of film, nitride film and carbide thin film.
Background technology
Magnetron sputtering is to collide during electronics accelerates to fly to substrate under the action of electric field with ar atmo, is ionized
Go out a large amount of argon ion and electronics, electronics flies to substrate.Argon ion accelerates to bombard target under the action of electric field, sputters a large amount of
Target atom, the target atom being in neutrality（Or molecule）It is deposited on substrate and forms a film.
In industrial processes, during workpiece to be plated door t door, plasma cleaning, metal bonding coating and work(are undergone
Three basic steps of ergosphere.It is currently used to have ion source cleaning, be divided into hall ion source, linear ion source, hollow cathode from
Component etc., wherein first two multimode ionization source are used for optical coating and polymer surfaces coating film treatment, of less demanding to binding force.It is empty
The heart-yin pole multimode ionization source is used for tool plated film, but its operating distance is short, and electromagnetic field is needed to assist, therefore equipment generally cannot
Size more than 700mm.Ionization level drastically declines when magnetron sputtering is due to far from target, and often voidage is big for the film of preparation, especially
It is in batch plated film, and workpiece can undergo the wave variation of ionization level, and film quality is high near target, far from target mass
Difference, it is therefore necessary to improve the space ionization level of magnetron sputtering.
The method for improving space ionization level at present has closed field magnetron sputtering, as the closed field magnetic control of Teer companies of Britain splashes
It penetrates（British Patent No. 2258343, U.S. Patent number 5554519, european patent number 0521045）, non-equilibrium magnetic controlled splash is utilized
The magnetic field of extension is penetrated, is closed adjacent magnetic field by reasonably designing, forms electron channel, electronics prolongs the rotation of these magnetic lines of force
Turn, ionization level is improved with neutral collisions.
At home, patent of invention ZL201210161364.9, patent 201210474290.4, patent 201220233276.0
Disclose the design of closed field magnetic control sputtering device, almost with Teer companies as.Patent ZL 201220209547.9 then exists
It is modified on the basis of this, closed magnetic field is formed using the column magnetic control that inner ring is placed；Patent ZL 98120365.5 discloses one
The magnetic control sputtering device that the non-equilibrium target of kind is closed with central magnetic field, the magnetic field and target reversing magnetic field that center is placed are symmetrical, the magnetic line of force
Across workpiece to be plated, the ionization level of coating film area is greatly improved.It is non-that Dalian University of Science ＆ Engineering discloses a kind of plasma enhancing
Unbalanced magnetron sputtering method（ZL 01116734.3）, utilize the ionization level of microwave ion source auxiliary raising magnetron sputtering.
The shortcomings that above-mentioned technology is to have to close magnetic control target to achieve the purpose that magnetic field is closed, and equipment is complicated, cost is inclined
It is high；Microwave plasma source is difficult to realize the assistant depositing of large area.
Invention content
The purpose of the present invention is to solve carried the problem of coating quality in processes of physical vapor deposition is poor, film is inhomogenous
Go out a kind of auxiliary magnetic control sputtering film plating device of anodic field.The present invention is equal by the ionization level and plasma for enhancing space plasma
Even property and then film binding force and performance are improved, and anode provides the device group of power supply by the copper coin of one piece of water cooling and to copper coin
Into being suitable for the deposition of large area film.
A kind of auxiliary magnetic control sputtering film plating device of anodic field is powered including vacuum cavity, workpiece plate and at least two by power supply I
Magnetic controlled sputtering target, it is characterised in that the water cooling anode powered by power supply II is equipped between adjacent magnetic controlled sputtering target, true
Closed loop configuration is formed in cavity body.
The magnetic controlled sputtering target is rectangle or column spinner target.
The magnetic controlled sputtering target is metal or nonmetallic target.
The power supply I is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
The anode is to bring the cold copper coin structure of air water into.
The direct-flow positive voltage that the power supply II is grid bias power supply or voltage is 50-500V.
The anode and magnetic controlled sputtering target be arranged at an equal altitude.
The present invention flies to anode by the electronics that magnetron sputtering excites under positive electricity field action, in flight course and neutral grain
Son collision aggravation ionization level, thus forms ion channel between anode and magnetic control target, reaches and improve ionization level and homogenize cavity
The purpose of plasma.
Compared with the prior art, the present invention has the following advantages：
1st, the present invention is compound by contour water cooling anode and magnetic controlled sputtering target, and cavity is improved while enhancing ionization level
Plasma uniformity.
2nd, the use of water cooling anode of the present invention reduces the necessary adjacent target arrangement of closed field magnetic control, improves space profit
With rate and plating membrane efficiency.
3rd, water cooling anode of the present invention can also be used in conjunction with grid bias power supply achievees the effect that PECVD plated films.
Description of the drawings
Fig. 1 is the structural diagram of the present invention.
In figure：1- magnetic controlled sputtering targets, 2- anodes, 3- power supplys I, 4- workpiece plates, 5- power supplys II.
Specific embodiment
Embodiment 1
As shown in Figure 1, a kind of auxiliary magnetic control sputtering film plating device of anodic field, including vacuum cavity, workpiece plate 4 and at least two
The magnetic controlled sputtering target 1 powered by power supply I 3 is equipped with the water cooling anode powered by power supply II 5 between adjacent magnetic controlled sputtering target 1
2, closed loop configuration is formed in vacuum cavity.
Magnetic controlled sputtering target 1 is rectangle or column spinner target.
Magnetic controlled sputtering target 1 is metal or nonmetallic target.
Power supply I 3 is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
Anode 2 is to bring the cold copper coin structure of air water into.
The direct-flow positive voltage that power supply II 5 is grid bias power supply or voltage is 50-500V.
Anode 2 and 1 be arranged at an equal altitude of magnetic controlled sputtering target.
Embodiment 2
A kind of auxiliary magnetic control sputtering film plating device of anodic field is supplied including vacuum cavity, workpiece plate 4 and at least two by power supply I 3
The magnetic controlled sputtering target 1 of electricity is equipped with the water cooling anode 2 powered by power supply II 5, in vacuum chamber between adjacent magnetic controlled sputtering target 1
Closed loop configuration is formed in vivo.Wherein 1 200 × 800mm of size of rectangle magnetic controlled sputtering target2, arranged using multiple track water cooling, band auxiliary
Air inlet designs；2 100 × 800mm of size of water cooling anode2, hollow water-cooled cathode design, band gas distribution structure；Power supply I 3 uses 10KW
Direct current pulse power source or DC power supply power supply；Water cooling anode 2 uses 3KW direct-flow positive voltages；It is taken out using low temperature molecular pumping system true
The maintenance of air pressure during empty and plated film.
Embodiment 3
A kind of auxiliary magnetic control sputtering film plating device of anodic field is supplied including vacuum cavity, workpiece plate 4 and at least two by power supply I 3
The magnetic controlled sputtering target 1 of electricity is equipped with the water cooling anode 2 powered by power supply II 5, in vacuum chamber between adjacent magnetic controlled sputtering target 1
Closed loop configuration is formed in vivo.Wherein 1 100 × 800mm of size of rectangle magnetic controlled sputtering target2, arranged using multiple track water cooling；Water cooling
2 100 × 800mm of size of anode2, hollow water-cooled cathode design, band gas distribution structure；Power supply I 3 using 10KW bipolar pulses power supply or
The bipolar high power pulsed source of person；Water cooling anode 2 uses 3KW direct-flow positive voltages；It vacuumizes and plates using low temperature molecular pumping system
The maintenance of air pressure during film.
Embodiment 4
The preparation of high-bond titanium nitride membrane is realized using device shown in FIG. 1：
The pure and fresh drying of sample is evacuated to 1.0 × 10-4Pa starts plated film；Bias 1000V, duty ratio 0.4, anode positive electricity
500V is pressed, is passed through argon gas 0.8Pa, is cleaned 10 minutes；2 groups of magnetron sputtering titanium targets are opened, bias 800V, duty ratio 0.4, anode is just
Voltage 500V is passed through argon gas 0.8Pa, bombards 10 minutes；Bias is down to 200V, anode positive voltage 150V, argon gas 0.5Pa, nitrogen
0.3Pa is deposited 2 hours；Room temperature to be down to takes out sample test, binding force 62N.
Claims (6)
1. a kind of auxiliary magnetic control sputtering film plating device of anodic field, including vacuum cavity, workpiece plate（4）With at least two by power supply I（3）
The magnetic controlled sputtering target of power supply（1）, it is characterised in that in adjacent magnetic controlled sputtering target（1）Between be equipped with by power supply II（5）Power supply
Water cooling anode（2）, closed loop configuration is formed in vacuum cavity；The anode（2）It is to bring the cold copper coin structure of air water into.
2. device as described in claim 1, it is characterised in that the magnetic controlled sputtering target（1）For rectangle or column spinner target.
3. device as described in claim 1, it is characterised in that the magnetic controlled sputtering target（1）For metal or nonmetallic target.
4. device as described in claim 1, it is characterised in that the power supply I（3）For direct current, DC pulse, intermediate frequency, radio frequency or
High power pulsed source.
5. device as described in claim 1, it is characterised in that the power supply II（5）Be grid bias power supply or voltage it is 50-500V
Direct-flow positive voltage.
6. device as described in claim 1, it is characterised in that the anode（2）With magnetic controlled sputtering target（1）Be arranged at an equal altitude.
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| CN201510704469.8A CN105200381B (en) | 2015-10-27 | 2015-10-27 | The auxiliary magnetic control sputtering film plating device of anodic field |
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| CN105200381B true CN105200381B (en) | 2018-06-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111411337A (en) * | 2020-03-31 | 2020-07-14 | 中国科学院兰州化学物理研究所 | Excitation modulation anode auxiliary magnetron sputtering ion coating system |
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| CN108570642B (en) * | 2018-07-25 | 2024-05-03 | 衡阳舜达精工科技有限公司 | Low-temperature controllable deposition method and device for carbon film |
| CN108611619A (en) * | 2018-07-25 | 2018-10-02 | 衡阳舜达精工科技有限公司 | Magnetron sputtering/microwave surface wave depositing system |
| CN112713212A (en) * | 2021-01-28 | 2021-04-27 | 湖南红太阳光电科技有限公司 | HJT battery based on double-layer transparent conductive oxide film and preparation method thereof |
| CN114318269B (en) * | 2022-01-05 | 2022-10-28 | 中国科学院兰州化学物理研究所 | Device and method for sputtering and depositing metal on surface of magnetic powder material |
| CN115522174B (en) * | 2022-11-29 | 2023-03-21 | 中科纳微真空科技(合肥)有限公司 | Magnetic field adjustable active anode and magnetron sputtering equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN205152320U (en) * | 2015-10-27 | 2016-04-13 | 中国科学院兰州化学物理研究所 | Magnetron sputtering coating film device is assisted to anodic field |
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| CN1109127C (en) * | 1998-10-09 | 2003-05-21 | 北京振涛国际钛金技术有限公司 | Non-balance plane magnetic controlled sputtering cathode and film plating device thereof |
| CN1170000C (en) * | 2001-04-20 | 2004-10-06 | 大连理工大学 | Plasma Intensified non-balance magnetically controlled sputter method |
| CN202643826U (en) * | 2012-05-09 | 2013-01-02 | 爱发科中北真空（沈阳）有限公司 | Unbalanced magnetron sputtering coating equipment for closed magnetic field |
| CN102677011B (en) * | 2012-05-23 | 2014-08-20 | 文晓斌 | Non-balanced closed field magnetron sputtering ion plating equipment |
| CN103834922A (en) * | 2012-11-20 | 2014-06-04 | 虞建忠 | Nonequilibrium magnetron sputtering ion plating magnetic field closed state controlling method |
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| CN205152320U (en) * | 2015-10-27 | 2016-04-13 | 中国科学院兰州化学物理研究所 | Magnetron sputtering coating film device is assisted to anodic field |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111411337A (en) * | 2020-03-31 | 2020-07-14 | 中国科学院兰州化学物理研究所 | Excitation modulation anode auxiliary magnetron sputtering ion coating system |
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