CN115522174B

CN115522174B - Magnetic field adjustable active anode and magnetron sputtering equipment

Info

Publication number: CN115522174B
Application number: CN202211503178.9A
Authority: CN
Inventors: 游锦山
Original assignee: Zhongkena Micro Vacuum Technology Hefei Co ltd
Current assignee: Zhongkena Micro Vacuum Technology Hefei Co ltd
Priority date: 2022-11-29
Filing date: 2022-11-29
Publication date: 2023-03-21
Anticipated expiration: 2042-11-29
Also published as: CN115522174A

Abstract

The invention discloses a magnetic field adjustable active anode and magnetron sputtering equipment, wherein an anode plate and a magnet yoke are respectively positioned at two sides of a mounting base and are arranged on a mounting substrate, a magnet accommodating groove is formed in one side of the magnet yoke facing the mounting base, a magnet moving space is formed between the magnet yoke and the mounting base by the magnet accommodating groove, and an adjusting piece is arranged on a magnet assembly and is arranged in the magnet moving space through the adjusting piece so as to adjust the position of the magnet assembly in the magnet accommodating groove. Through the initiative positive pole in the adjustable magnetic field of above-mentioned optimal design, through setting up the magnet subassembly in anode plate one side to adjust the magnetic line of force that the magnet subassembly passed the anode plate through the yoke, under the prerequisite that does not change the initiative positive pole position in magnetron sputtering equipment, can adjust the magnetic field intensity of initiative positive pole according to the needs of sputtering, the magnetic field intensity of being convenient for is adjusted, thereby guarantees magnetron sputtering coating film quality.

Description

Magnetic field adjustable active anode and magnetron sputtering equipment

Technical Field

The invention relates to the technical field of magnetron sputtering equipment, in particular to an active anode capable of adjusting a magnetic field and magnetron sputtering equipment.

Background

The basic principle of magnetron sputtering is to change the moving direction of electrons by a magnetic field, restrict and prolong the moving path of the electrons, improve the ionization rate of the electrons and effectively utilize the energy of the electrons. The result is that compared with other vacuum coating methods, the method has the two characteristics of low temperature and high speed because the high-energy electrons bombarding the substrate are reduced and the high-energy ions bombarding the target material are increased.

In recent years, the magnetron sputtering coating industry has higher and higher requirements on low-temperature coating. In the magnetron sputtering process, when the energy of electrons is exhausted and is separated from the constraint near the target material, the electrons become stray electrons, and the stray electrons can finally run onto the substrate, the cavity and the cavity baffle along the direction of an electric field. Electrons running onto the substrate can generate bombardment heating effect on the substrate, so that the temperature rise phenomenon is caused, and meanwhile, the bombardment of stray electrons can damage a film layer on the substrate.

In order to reduce the heating temperature rise effect caused by the bombardment of stray electrons and improve the film forming quality, auxiliary anodes are added in some film coating equipment. The auxiliary anode is arranged near the cathode target and connected with a power supply with a positive potential, and the anode with the positive potential can collect part of stray electrons and reduce the temperature rise effect generated by stray electron bombardment. However, the ability to collect stray electrons is limited and cannot meet the further demands of the customer.

In order to collect more stray electrons, an active anode is designed to be mounted near the cathode target and connected to a positive potential power supply, or connected to the positive electrode of the cathode power supply or ground potential. The structure of the active anode is provided with 1 row of magnets, the direction of the magnets is opposite to that of the outer ring magnets in the cathode, closed magnetic lines of force are formed, and stray electrons move towards the active anode along the direction of the magnetic lines of force and are collected by the active anode. The active anode mode has stronger capability of collecting electrons. However, due to the size limitations of different coating equipment, if the position to be installed is too far away from the surface of the cathode target, the magnetic field is too weak, and the ability of collecting electrons is greatly weakened; if the installed position is too close to the surface of the cathode target, the generated magnetic field is too strong, which can trap useful electrons in the plasma of the cathode itself, causing a large rise in the voltage of the sputtering process, and further causing other defects. In addition, the magnetic field intensity in the cathodes of different clients is different, and ideal matching effect is difficult to achieve.

Disclosure of Invention

In order to solve the technical problems in the background art, the invention provides an active anode capable of adjusting a magnetic field and a magnetron sputtering device.

The invention provides an active anode capable of adjusting a magnetic field and magnetron sputtering equipment, which comprise: the magnetic iron comprises a mounting base, a magnetic yoke, a magnet assembly and an anode plate;

the anode plate and the magnet yoke are respectively located on two sides of the mounting base and are mounted on the mounting base plate, the magnet yoke is provided with a magnet containing groove towards one side of the mounting base, the magnet containing groove forms a magnet moving space between the magnet yoke and the mounting base, a regulating piece is arranged on the magnet assembly, and the magnet assembly is mounted in the magnet moving space through the regulating piece so as to regulate the position of the magnet assembly in the magnet containing groove.

Preferably, the bottom of the magnet accommodating groove is provided with a through hole, one side of the magnet yoke, which is far away from the mounting base, is provided with an adjusting nut, one end of the adjusting piece is connected with the magnet assembly, and the other end of the adjusting piece penetrates through the through hole and is installed on the adjusting nut in a threaded manner.

Preferably, the magnet assembly comprises a base body and a plurality of magnets sequentially mounted on the base body, wherein a plurality of adjusting pieces are arranged on one side, away from the magnets, of the base body, and the adjusting pieces are sequentially arranged along the arrangement direction of the magnets.

Preferably, the mounting base comprises a substrate and a supporting structure, the supporting structure is fixed on one side of the substrate, which is far away from the anode plate, the magnetic yoke is fixed on the supporting structure, and the supporting structure is internally provided with a cooling liquid channel.

Preferably, the supporting structure adopts a supporting pipe, two supporting pipes which are arranged in parallel and at intervals are arranged on the base plate, and the magnetic field component is positioned between the two supporting pipes.

Preferably, a gas channel is arranged on the substrate, and a gas nozzle communicated with the gas channel is arranged on the anode plate.

Preferably, the gas barrier is positioned between the substrate and the anode plate, an upper gas groove is formed in the bottom of the substrate, the gas barrier and the upper gas groove jointly form the gas channel, a lower gas groove is formed in the top of the anode plate, and a vent hole communicated with the upper gas groove and the lower gas groove is formed in the gas barrier.

Preferably, two sides of the mounting base are respectively provided with a baffle plate, the two baffle plates extend from two sides of the magnetic yoke to two sides of the anode plate, and an exhaust space is formed on one side of the anode plate away from the magnetic yoke;

preferably, the baffle is fixedly connected to the support structure.

According to the active anode capable of adjusting the magnetic field, the anode plate and the magnet yoke are respectively positioned on two sides of the mounting base and are mounted on the mounting base plate, the magnet yoke is provided with a magnet accommodating groove towards one side of the mounting base, a magnet moving space is formed between the magnet yoke and the mounting base through the magnet accommodating groove, the magnet assembly is provided with an adjusting piece and is mounted in the magnet moving space through the adjusting piece, and therefore the position of the magnet assembly in the magnet accommodating groove is adjusted. Through the initiative positive pole in the adjustable magnetic field of above-mentioned optimal design, through setting up the magnet subassembly in anode plate one side to adjust the magnetic line of force that the magnet subassembly passed the anode plate through the yoke, under the prerequisite that does not change the initiative positive pole position in magnetron sputtering equipment, can adjust the magnetic field intensity of initiative positive pole according to the needs of sputtering, the magnetic field intensity of being convenient for is adjusted, thereby guarantees magnetron sputtering coating film quality.

The invention also provides magnetron sputtering equipment which comprises the active anode capable of adjusting the magnetic field.

Preferably, the device further comprises a sputtering cathode and a target, wherein the target is positioned on one side of the sputtering cathode, and the active anode is positioned on one side of the target close to the sputtering cathode;

preferably, the magnetron sputtering device comprises a plurality of active anodes, and the plurality of active anodes are positioned on two sides of the target.

In the present invention, the technical effect of the proposed magnetron sputtering apparatus is similar to that of the active anode capable of adjusting the magnetic field, and therefore, the detailed description thereof is omitted.

Drawings

Fig. 1 is a schematic structural diagram of an embodiment of an active anode capable of adjusting a magnetic field according to the present invention.

Fig. 2 is a schematic cross-sectional structural diagram of an embodiment of an active anode capable of adjusting a magnetic field according to the present invention.

Fig. 3 is a schematic view of magnetic lines of force of a magnet assembly located in a magnetic yoke in an embodiment of an active anode capable of adjusting a magnetic field according to the present invention.

Fig. 4 is a schematic view of magnetic lines of force of a magnet assembly located in a magnetic yoke in an embodiment of a magnetron sputtering apparatus according to the present invention.

Fig. 5 is a schematic view of magnetic lines of force of a magnet assembly outside a magnetic yoke in an embodiment of an active anode capable of adjusting a magnetic field according to the present invention.

Fig. 6 is a schematic view of magnetic lines of force of a magnet assembly outside a magnet yoke in an embodiment of a magnetron sputtering apparatus according to the present invention.

Fig. 7 is a schematic diagram of an internal fitting structure of an embodiment of an active anode capable of adjusting a magnetic field according to the present invention.

Detailed Description

As shown in fig. 1 to 7, fig. 1 is a schematic structural diagram of an embodiment of an active anode capable of adjusting a magnetic field according to the present invention, fig. 2 is a schematic cross-sectional structural diagram of an embodiment of an active anode capable of adjusting a magnetic field according to the present invention, fig. 3 is a schematic magnetic line of force of a magnet assembly located inside a magnetic yoke according to an embodiment of an active anode capable of adjusting a magnetic field according to the present invention, fig. 4 is a schematic magnetic line of force of a magnet assembly located inside a magnetic yoke according to an embodiment of a magnetron sputtering apparatus according to the present invention, fig. 5 is a schematic magnetic line of force of a magnet assembly located outside a magnetic yoke according to an embodiment of an active anode capable of adjusting a magnetic field according to the present invention, fig. 6 is a schematic magnetic line of force of a magnet assembly located outside a magnetic yoke according to an embodiment of a magnetron sputtering apparatus according to the present invention, and fig. 7 is a schematic internal fitting structural diagram of an embodiment of an active anode capable of adjusting a magnetic field according to the present invention.

Referring to fig. 1 and 2, the present invention provides an active anode capable of adjusting magnetic field, including: the magnetic field generator comprises a mounting base 1, a magnetic yoke 2, a magnet assembly 3 and an anode plate 9;

anode plate 9 and yoke 2 are located the both sides of mounting substrate 1 respectively and install on mounting substrate 18, and yoke 2 is equipped with the magnet holding tank towards mounting substrate 1 one side, the magnet holding tank forms magnet activity space between yoke 2 and mounting substrate 1, is equipped with regulating part 30 on the magnet subassembly 3 and installs through regulating part 30 in the magnet activity space to it is in to adjust magnet subassembly 3 position in the magnet holding tank.

Referring to fig. 3 to fig. 6, in order to describe in detail the specific operation of the active anode capable of adjusting the magnetic field of the present embodiment, the present embodiment further provides a magnetron sputtering apparatus including the active anode capable of adjusting the magnetic field. Specifically, the magnetron sputtering apparatus further includes a sputtering cathode 300 and a target 200, the target 200 is located on one side of the sputtering cathode 300, and the active anode is located on one side of the target 200 close to the sputtering cathode 300.

During operation, the active anode may be connected to a positive potential source or to a positive or ground potential of a cathode source. A closed magnetic line of force is formed between the active anode and the sputtering cathode, and stray electrons move towards the active anode along the direction of the magnetic line of force and are further collected by the active anode. Because the magnet yoke is made of ferromagnetic materials, the magnet yoke can absorb magnetic lines of force overflowing from the magnet assembly to different degrees. When the magnetic field intensity of the active anode is adjusted according to the requirement of a sputtering process, the depth of the magnet assembly in the magnet accommodating groove of the magnet yoke is adjusted through the adjusting piece so as to control the number of overflowing magnetic lines of force of the magnet assembly, namely the density of cathode magnetic lines of force absorbed by the anode plate, and further control the magnetic field intensity of the active anode.

Specifically, as shown in fig. 3 and 5, when the magnet assembly 3 is placed in the receiving groove of the yoke 2, the magnet assembly is located at the weakest magnetic field position. The figure shows the shape of magnetic lines of force after the magnetic fields of the anode and the cathode are coupled, the anode absorbs a small part of the magnetic lines of force of the cathode, and the magnet of the cathode forms a magnetic line of force loop. As shown in fig. 4 and 6, when the magnet assembly 3 is in the moving space outside the yoke 2, the magnet assembly is at the position of the strongest magnetic field. The figure shows the shape of magnetic lines after the magnetic field coupling of the anode and the cathode, the anode absorbs more magnetic lines of the cathode, and the density of the magnetic lines of the cathode surface becomes smaller.

In a design mode of the adjusting piece, a through hole is formed in the bottom of the magnet containing groove, an adjusting nut 4 is arranged on one side, away from the mounting base, of the magnet yoke 2, one end of the adjusting piece 30 is connected with the magnet assembly 3, and the other end of the adjusting piece penetrates through the through hole and is installed on the adjusting nut 4 in a threaded mode. The adjusting piece is in threaded fit with the adjusting nut, and the extension or the shortening of the adjusting piece can be adjusted by rotating the nut. In another design, the magnet assembly can be adjusted in a telescopic manner by the threaded engagement of the adjusting part with the base body of the magnet assembly. In the actual design, the adjusting piece can also be realized by adopting other structures.

In a specific design mode of the magnet assembly, the magnet assembly 3 comprises a base body and a plurality of magnets sequentially mounted on the base body, correspondingly, a plurality of adjusting pieces 30 are arranged on one side of the base body away from the magnets, and the plurality of adjusting pieces 30 are sequentially arranged along the arrangement direction of the magnets.

In a specific embodiment of the mounting base, the mounting base comprises a base plate 18 and a support structure, the support structure being fixed to the side of the base plate 18 remote from the anode plate 9, and the magnet yoke 2 being fixed to the support structure, the support structure being provided with a cooling liquid channel. Through the interface of cooling liquid passageway tip, can let in cooling liquid to bearing structure inside, cool off the protection to the magnet subassembly in the course of the work.

Specifically, referring to FIG. 7, the support structure employs support tubes 14, two support tubes 14 are disposed on a substrate 18 in parallel and spaced apart, and a magnetic field assembly is disposed between the two support tubes 14. In actual processing, two supporting pipes can be welded on the base plate, two ends of the magnetic yoke are installed on the two supporting pipes through bolts, and the magnet assembly is located between the two supporting pipes.

In addition, the magnetron sputtering process needs protection of process gas, and in order to facilitate gas inlet, a process gas inlet function can be additionally arranged on the active anode. Specifically, a gas channel is arranged on the substrate 18, and a gas nozzle 10 communicated with the gas channel is arranged on the anode plate 9. The process gas required by sputtering is sent into the gas channel and sprayed to the periphery of the target material through the gas nozzle to protect the material.

In a further specific design mode, in order to facilitate processing of channels in the substrate and the anode plate, the present embodiment further includes a gas barrier 8, the gas barrier 8 is located between the substrate 18 and the anode plate 9, an upper gas groove is formed in the bottom of the substrate 18, the gas barrier 8 and the upper gas groove jointly form the gas channel, a lower gas groove is formed in the top of the anode plate 9, and a vent hole communicating the upper gas groove and the lower gas groove is formed in the gas barrier 8. The process gas can be sprayed out from the gas nozzle after sequentially passing through the upper gas tank, the vent hole and the lower gas tank.

In other embodiments, two baffles 7 are respectively disposed on two sides of the mounting base 1, two baffles 7 extend from two sides of the magnetic yoke 2 to two sides of the anode plate 9, and an exhaust space is formed on one side of the anode plate 9 away from the magnetic yoke 2. The baffle sets up on the one hand and protects the initiative positive pole, and on the other hand, the gaseous process exhaust space of gas nozzle spun is sent out again, realizes the even seeing off of protective gas to the accessible adjusts the interval of two baffles, guarantees gaseous steady seeing off. Furthermore, the baffle 7 is fixedly connected with the support structure, so that the baffle is directly contacted with a cooling channel in the support structure, and the integral cooling of the active anode is realized.

In a specific design manner of the magnetron sputtering apparatus provided in this embodiment, the magnetron sputtering apparatus includes a plurality of active anodes, and the plurality of active anodes are located at two sides of the target 200.

In this embodiment, the active anode and the magnetron sputtering device of adjustable magnetic field that propose, anode plate and yoke are located the both sides of mounting base respectively and install on mounting substrate, and the yoke is equipped with the magnet holding tank towards mounting base one side, the magnet holding tank forms magnet activity space between yoke and mounting base, is equipped with the regulating part on the magnet subassembly and installs through the regulating part in the magnet activity space to it is in to adjust the magnet subassembly position in the magnet holding tank. Through the initiative positive pole in the adjustable magnetic field of above-mentioned optimal design, through setting up the magnet subassembly in anode plate one side to adjust the magnetic line of force that the magnet subassembly passed the anode plate through the yoke, under the prerequisite that does not change the initiative positive pole position in magnetron sputtering equipment, can adjust the magnetic field intensity of initiative positive pole according to the needs of sputtering, the magnetic field intensity of being convenient for adjusts, thereby guarantees magnetron sputtering coating quality.

In order to effectively collect stray electrons, adapt to the size limitation of coating equipment of different customers and adapt to the magnetic field intensity of magnetron sputtering cathodes of different customers, the invention provides the active anode with adjustable magnetic field intensity, the magnetic field intensity can be precisely adjusted from 10 to 100 percent, the magnetic field is convenient to adjust, the repetition precision is high, and the active anode is suitable for magnetic rods of different types; the method can help customers find the optimal process; meanwhile, the process gas distribution is integrated, so that the structure is compact; the water-cooling design protects the magnet, and the cooling water and the magnet are not in contact.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims

1. An active anode capable of adjusting a magnetic field, comprising: the magnetic field generator comprises a mounting base (1), a magnetic yoke (2), a magnet assembly (3) and an anode plate (9);

anode plate (9) and yoke (2) are located the both sides of mounting base (1) respectively and install on mounting substrate (18), and yoke (2) are equipped with the magnet holding tank towards mounting base (1) one side, the magnet holding tank forms magnet activity space between yoke (2) and mounting base (1), is equipped with regulating part (30) on magnet subassembly (3) and installs through regulating part (30) in the magnet activity space to it is in to adjust magnet subassembly (3) position in the magnet holding tank.

2. Active anode capable of adjusting magnetic field according to claim 1, characterized in that the bottom of the magnet receiving slot is provided with a through hole, the side of the magnet yoke (2) away from the mounting base is provided with an adjusting nut (4), one end of the adjusting member (30) is connected with the magnet assembly (3) and the other end is threaded on the adjusting nut (4) through the through hole.

3. Active anode with adjustable magnetic field according to claim 1, characterized in that the magnet assembly (3) comprises a base body and a plurality of magnets mounted on the base body in sequence, wherein the base body is provided with a plurality of adjusting pieces (30) at the side away from the magnets, and the plurality of adjusting pieces (30) are arranged in sequence along the arrangement direction of the magnets.

4. Active anode with adjustable magnetic field according to claim 1, characterized in that the mounting base comprises a base plate (18) and a support structure, the support structure being fixed to the side of the base plate (18) facing away from the anode plate (9), the magnet yoke (2) being fixed to the support structure, the support structure being provided with cooling liquid channels.

5. The active anode capable of adjusting magnetic field according to claim 4, characterized in that the supporting structure is a supporting tube (14), two supporting tubes (14) are arranged on the base plate (18) in parallel and spaced, and the magnetic field assembly is located between the two supporting tubes (14).

6. The magnetic field adjustable active anode according to claim 4, characterized in that a gas channel is provided on the substrate (18), and a gas nozzle (10) communicating with the gas channel is provided on the anode plate (9).

7. The active anode capable of adjusting the magnetic field according to claim 6, further comprising a gas barrier (8), wherein the gas barrier (8) is located between the substrate (18) and the anode plate (9), an upper gas groove is formed at the bottom of the substrate (18), the gas barrier (8) and the upper gas groove jointly form the gas channel, a lower gas groove is formed at the top of the anode plate (9), and a vent hole communicating the upper gas groove and the lower gas groove is formed in the gas barrier (8).

8. Active anode with adjustable magnetic field according to claim 4, characterized in that the mounting base (1) is provided with baffles (7) on both sides, two baffles (7) extending from both sides of the magnetic yoke (2) to both sides of the anode plate (9) and forming an exhaust space on the anode plate (9) side away from the magnetic yoke (2).

9. Magnetron sputtering apparatus comprising an active anode of adjustable magnetic field according to any of claims 1 to 5.

10. The magnetron sputtering apparatus according to claim 9, further comprising a sputtering cathode (300) and a target (200), the target (200) being located on one side of the sputtering cathode (300) and the active anode being located on one side of the target (200) adjacent to the sputtering cathode (300).