CN112553587A - Rotary multi-target magnetron sputtering cathode - Google Patents
Rotary multi-target magnetron sputtering cathode Download PDFInfo
- Publication number
- CN112553587A CN112553587A CN202011536381.7A CN202011536381A CN112553587A CN 112553587 A CN112553587 A CN 112553587A CN 202011536381 A CN202011536381 A CN 202011536381A CN 112553587 A CN112553587 A CN 112553587A
- Authority
- CN
- China
- Prior art keywords
- target
- sputtering
- anode
- magnet assembly
- targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
Abstract
The invention relates to the technical field of magnetron sputtering, and provides a rotary multi-target magnetron sputtering cathode which comprises an anode and a magnet assembly, wherein sputtering holes are formed in the anode, a target material bracket and a group of target materials are arranged between the magnet assembly and the anode, a sputtering area is formed between the sputtering holes and the target materials, the target materials are arranged on the target material bracket, the target materials are matched with the magnet assembly in size, any target material rotates to the sputtering area by virtue of the target material bracket, only the target material rotating to the position right above the magnet assembly can be subjected to magnetron sputtering, and other target materials cannot be subjected to glow sputtering due to extremely weak magnetic field and insufficient sputtering airflow at the position, so that the problems that one sputtering cathode can only fix one target material and cannot sputter different materials at the same position in the prior art are solved.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering, in particular to a rotary multi-target magnetron sputtering cathode.
Background
The working principle of magnetron sputtering is that a permanent magnet forms a magnetic field on the surface of a target material, sputtering process gas (generally argon gas) is introduced into a target material accessory, when sputtering voltage is applied to the target material, an electric field is formed between the target material and an anode, the argon gas is ionized to form plasma under the combined action of the electric field and the magnetic field, argon ions are attracted by the sputtering voltage to accelerate flying to the target material, part of ions with strong energy can bombard atoms on the surface of the target material, the bombarded target material atoms fly away from the target material, and the target material atoms fall on a substrate to be coated to form a film. The conventional magnetron sputtering cathode target is arranged on an oxygen-free copper substrate, a permanent magnet is arranged behind the oxygen-free copper substrate, water is introduced for cooling, and sputtering voltage is applied to the oxygen-free copper substrate and is conducted to the target; the outer side of the sputtering cathode is an anode of the sputtering cathode, the anode is grounded, and in the structure, the magnet, the oxygen-free copper substrate and the target material are all static. The conventional magnetron sputtering cathode structure has the following problems: firstly, one sputtering cathode can only be fixedly provided with one target material, while a magnetron sputtering system generally needs to deposit a plurality of materials and needs a plurality of cathodes, thereby causing the size of a sputtering process chamber to be increased, a vacuum pumping system to be increased and causing the cost of equipment to be increased; secondly, the positions of sputtering cathodes are different, and under certain conditions, the process requirements are best from the condition that the sputtering cathodes are at the same position, and the current design can not realize the sputtering of different materials at the same position.
Therefore, at present, those skilled in the art are in urgent need to design a rotary multi-target magnetron sputtering cathode to solve the above problems.
Disclosure of Invention
The invention provides a rotary multi-target magnetron sputtering cathode, which not only solves the problems of large size of a process chamber and high equipment cost, but also realizes sputtering of different materials at the same position.
The technical scheme of the invention is as follows:
the rotary multi-target magnetron sputtering cathode comprises an anode and a magnet assembly, wherein sputtering holes are formed in the anode, a target support and a group of targets are arranged between the magnet assembly and the anode, a sputtering area is formed between the sputtering holes and the targets, the targets are arranged on the target support, the sizes of the targets and the magnet assembly are matched, and any target rotates to the sputtering area by means of the target support.
The target support is in a circular tray shape, the target is arranged at the top of the target support along the circumferential direction, the anode is grounded, a group of sputtering holes are formed, and the sputtering holes are one-to-one opposite to the target.
The device also comprises a positioning rotating frame, wherein the positioning rotating frame and the target support are coaxially arranged, and the positioning rotating frame is fixedly connected with the target support.
The positioning rotating frame and the target support are both provided with cooling runners, and the target support is made of oxygen-free copper.
The magnetic shield is characterized by further comprising a shielding cover, wherein the shielding cover is of a cap-shaped structure and is fixedly grounded on one side of the anode, the shielding cover is provided with a splashing hole, the splashing hole is circular and is opposite to the magnet assembly, and the diameter of the splashing hole is larger than that of the splashing hole.
The magnet assembly comprises a central magnet and an outer ring magnet, and the magnetic poles of the central magnet are opposite to those of the outer ring magnet.
The working principle and the beneficial effects of the invention are as follows:
the invention relates to a rotary multi-target magnetron sputtering cathode, which comprises an anode and a magnet assembly, wherein sputtering holes are formed in the anode, a target support and a group of targets are arranged between the magnet assembly and the anode, a sputtering area is formed between the sputtering holes and the targets, the targets are arranged on the target support, the targets are matched with the magnet assembly in size, any target rotates to the sputtering area by virtue of the target support, the targets rotate by virtue of the target support, different targets can rotate to the position right opposite to the magnet assembly and then stop being positioned at the position, sputtering voltage is applied to the target support and is conducted to the targets, although all targets arranged on the target support are electrified, only the targets rotating right above the magnet assembly can be sputtered, and magnetron sputtering requires sputtering voltage, a magnetic field with enough strength, The gas with enough concentration, the positions of other targets cannot be sputtered by glowing because of extremely weak magnetic field and insufficient sputtering gas flow, the material of any target can be selected automatically according to the requirement, and because a plurality of targets are fixed on the same target bracket and rotate to the same position for sputtering, the problem that one sputtering cathode can only fix one target and cannot sputter different materials at the same position in the prior art is solved.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic cross-sectional view of the structure of the present invention;
FIG. 2 is a top view of the present invention showing the installation of multiple sets of targets;
FIG. 3 is a top view of the structural shield of the present invention;
in the figure: 1. the device comprises an anode, 2, a magnet assembly, 3, a target, 4, a target support, 5, sputtering holes, 6, a positioning rotating frame, 7, a shielding cover, 8, sputtering holes, 9 and a connecting block.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any inventive step, are intended to be within the scope of the present invention.
Example 1
As shown in fig. 1 to 3, the rotary multi-target magnetron sputtering cathode includes an anode 1 and a magnet assembly 2, a sputtering hole 5 is formed on the anode 1, a target support 4 and a set of targets 3 are disposed between the magnet assembly 2 and the anode 1, a sputtering region is formed between the sputtering hole 5 and the targets 3, the targets 3 are disposed on the target support 4, the targets 3 are matched with the magnet assembly 2 in size, and any one of the targets 3 rotates to the sputtering region by means of the target support 4.
In the embodiment, more than or equal to 2 targets 3 are arranged in one group, the targets 3 rotate by virtue of the target support 4, different targets 3 can rotate to the position opposite to the magnet assembly 2, then the positioning is stopped at the position, the targets 3 are positioned in the sputtering area, the target support 4 is electrified with sputtering voltage, the targets positioned in the sputtering area form magnetron sputtering, and sputtered atoms pass through the sputtering holes 5 and fall on a substrate to form a film. The target 3 rotates along with the target holder 4 to realize that different targets 3 are sputtered at the same position, and when the required target 3 rotates and is positioned above the magnet assembly 2, only the target 3 directly above the magnet assembly 2 is sputtered because the magnetic field of the positions of the other targets 3 is extremely weak. The material of any target 3 can be selected according to the needs, and because a plurality of targets 3 are fixed on the same target support 4 and rotate to the same position for sputtering, the size of a working chamber for installing a sputtering cathode is reduced, a vacuum chamber is reduced, a vacuum pumping system is reduced, and only one sputtering cathode is needed, so that the cost of the equipment is greatly reduced.
As shown in fig. 1 to 2, the target holder 4 is a circular tray, the target 3 is arranged on the top of the target holder 4 along the circumferential direction, the anode 1 is grounded, the sputtering holes 5 are arranged in a group, and the sputtering holes 5 are opposite to the target 3 one by one.
In the embodiment, the target support 4 is in a circular tray shape, the plurality of targets 3 are circumferentially arranged on the target support 4, when the target support 4 rotates, any target 3 can rotate to a position opposite to the magnet assembly 2 for sputtering, the position, corresponding to the target 3, of the anode 1 is provided with sputtering holes 5, the sputtering holes 5 rotate along with the anode 1, as the target 3 can be sputtered with a thin film at the anode during sputtering, a connecting block 9 is arranged between the anode 1 and the target support 4, so that the anode 1 and the target support 4 are connected and fixed into a whole, the anode 1 and the target support 4 rotate consistently, wherein the connecting block 9 is made of an insulating material, such as ceramic; and one target 3 corresponds to one sputtering hole 5, so that the sputtering holes 5 are ensured to be always opposite to the target 3, the thin films correspondingly formed on the peripheral sides of the sputtering holes 5 on the anode 1 are ensured to be above the corresponding target 3, and the cross contamination caused by the fact that different targets 3 share the same sputtering hole 5 is avoided.
As shown in fig. 1, the device further comprises a positioning rotating frame 6, wherein the positioning rotating frame 6 is coaxially arranged with the target support 4, and the positioning rotating frame 6 is fixedly connected with the target support 4.
In this embodiment, the positioning rotating frame 6 drives the target support 4 to rotate, the coaxial arrangement enables the target support 4 and the anode 1 to rotate around the axis when rotating, any target 3 has the same path and can rotate to the same position, so as to avoid deviation, the positioning rotating frame 6 has the rotating and positioning functions, and drives the target support 4 to rotate and position, so that any designated target 3 can rotate and be fixed right above the magnet assembly 2.
As shown in fig. 1, the positioning rotating frame 6 and the target support 4 are both provided with cooling channels, and the target support 4 is made of oxygen-free copper.
In this embodiment, target support 4 material is anaerobic copper, anaerobic copper has good electrically conductive, heat conductivility, and can not rust, the cooling runner is for setting up at the inside cooling water passageway of location swivel mount 6 and target support 4, the inside water that leads to of cooling runner takes away the heat that 3 sputtering in-process of target produced to make 3 low temperature states of target that keep in the sputtering in-process, stainless steel is chooseed for use to location swivel mount 6, avoid leading to water rusty, and long service life, manufacturing cost has been practiced thrift greatly.
As shown in fig. 1 to 3, the anode structure further comprises a shielding case 7, wherein the shielding case 7 is in a cap-shaped structure, the shielding case 7 is fixedly grounded on one side of the anode 1, the shielding case 7 is provided with a splashing hole 8, the splashing hole 8 is circular, the splashing hole 8 is opposite to the magnet assembly 2, and the diameter of the splashing hole 8 is larger than that of the splashing hole 5.
In the embodiment, the shielding case 7 is grounded and fixed, the splashing holes 8 are formed only at the positions opposite to the magnet assembly 2, the diameter of each splashing hole 8 is larger than that of each splashing hole 5 and smaller than the radius of the inner wall of the cap-shaped shielding case 7, so that the sputtering atoms are prevented from splashing on the shielding case 7 to cause pollution and waste due to the fact that the splashing holes 8 are too small, the shielding case 7 is prevented from losing effect due to the fact that the splashing holes 8 are too large, and one effect is to reduce the argon flow reaching the position of the unselected sputtering target 3; and the other is to prevent the material sputtered from the target 3 above the magnet assembly 2 from falling onto the target 3 covered below the shielding case 7, thereby avoiding the cross contamination of the material.
As shown in fig. 1, the magnet assembly 2 includes a center magnet and an outer ring magnet, the center magnet and the outer ring magnet having opposite poles.
In this embodiment, the central magnet and the outer ring magnet with opposite magnetic poles form a magnetic field, so that the surface of the target 3 moving to the position opposite to the magnet assembly 2 has stronger magnetic field distribution, sputtering voltage is applied to the positioning rotating frame 4, sputtering process gas is introduced near the position of the target 3 to be sputtered, and the target 3 is subjected to magnetron sputtering under the combined action of electric field force, magnetic field force and air flow.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions, improvements, etc. within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. The rotary multi-target magnetron sputtering cathode is characterized by comprising an anode (1) and a magnet assembly (2), wherein sputtering holes (5) are formed in the anode (1), a target support (4) and a group of targets (3) are arranged between the magnet assembly (2) and the anode (1), a sputtering area is formed between the sputtering holes (5) and the targets (3), the targets (3) are arranged on the target support (4), the targets (3) are matched with the magnet assembly (2) in size, and any target (3) rotates to the sputtering area by means of the target support (4).
2. The rotary multi-target magnetron sputtering cathode according to claim 1, wherein the target holder (4) is in a circular tray shape, the target (3) is arranged on the top of the target holder (4) along the circumferential direction, the anode (1) is arranged in a ground connection manner, the sputtering holes (5) are arranged in a group, and the sputtering holes (5) are opposite to the target (3) one by one.
3. The rotary multi-target magnetron sputtering cathode according to claim 1, further comprising a positioning rotating frame (6), wherein the positioning rotating frame (6) is coaxially arranged with the target support (4), and the positioning rotating frame (6) is fixedly connected with the target support (4).
4. The rotary multi-target magnetron sputtering cathode according to claim 3, wherein the positioning rotating frame (6) and the target material support (4) are both provided with a cooling channel, and the target material support (4) is made of oxygen-free copper.
5. The rotary multi-target magnetron sputtering cathode according to claim 1, further comprising a shielding case (7), wherein the shielding case (7) is in a cap-shaped structure, the fixed ground is arranged on one side of the anode (1), the shielding case (7) is provided with a splashing hole (8), the splashing hole (8) is circular, the splashing hole (8) is arranged opposite to the magnet assembly (2), and the diameter of the splashing hole (8) is larger than that of the splashing hole (5).
6. The rotary multi-target magnetron sputtering cathode according to claim 1, wherein the magnet assembly (2) comprises a central magnet and an outer ring magnet, the central magnet and the outer ring magnet having opposite poles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011536381.7A CN112553587A (en) | 2020-12-23 | 2020-12-23 | Rotary multi-target magnetron sputtering cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011536381.7A CN112553587A (en) | 2020-12-23 | 2020-12-23 | Rotary multi-target magnetron sputtering cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112553587A true CN112553587A (en) | 2021-03-26 |
Family
ID=75031506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011536381.7A Pending CN112553587A (en) | 2020-12-23 | 2020-12-23 | Rotary multi-target magnetron sputtering cathode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112553587A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023202793A1 (en) * | 2022-04-22 | 2023-10-26 | Oerlikon Surface Solutions Ag, Pfäffikon | Coating system and method for semiconductor equipment components |
-
2020
- 2020-12-23 CN CN202011536381.7A patent/CN112553587A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023202793A1 (en) * | 2022-04-22 | 2023-10-26 | Oerlikon Surface Solutions Ag, Pfäffikon | Coating system and method for semiconductor equipment components |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6197165B1 (en) | Method and apparatus for ionized physical vapor deposition | |
| US4547279A (en) | Sputtering apparatus | |
| EP0045822B1 (en) | Cylindrical magnetron sputtering cathode | |
| US6080287A (en) | Method and apparatus for ionized physical vapor deposition | |
| US5795451A (en) | Sputtering apparatus with a rotating magnet array | |
| US6117279A (en) | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition | |
| KR100442085B1 (en) | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source | |
| JP4856571B2 (en) | Plasma generator | |
| US4525262A (en) | Magnetron reactive bias sputtering method and apparatus | |
| US4810347A (en) | Penning type cathode for sputter coating | |
| JPH10289887A (en) | Ionization sputtering system | |
| US4434042A (en) | Planar magnetron sputtering apparatus | |
| EP1825491A2 (en) | Ion source with substantially planar design | |
| KR100532805B1 (en) | Apparatus and method for depositing a film on a substrate | |
| CN114231932B (en) | Magnetron sputtering coating equipment and control method thereof | |
| KR890004171B1 (en) | Vacuum sputtering device | |
| CN112553587A (en) | Rotary multi-target magnetron sputtering cathode | |
| CA1204700A (en) | Magnetron reactive bias sputtering method and apparatus | |
| US9028659B2 (en) | Magnetron design for extended target life in radio frequency (RF) plasmas | |
| CN214088645U (en) | Rotary multi-target magnetron sputtering cathode | |
| US5753089A (en) | Sputter coating station | |
| US5328582A (en) | Off-axis magnetron sputter deposition of mirrors | |
| EP0162643A1 (en) | Sputter coating source having plural target rings | |
| US6620298B1 (en) | Magnetron sputtering method and apparatus | |
| KR102597417B1 (en) | Sputtering device and sputtering method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |