CN214088645U - Rotary multi-target magnetron sputtering cathode - Google Patents
Rotary multi-target magnetron sputtering cathode Download PDFInfo
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- CN214088645U CN214088645U CN202023140752.8U CN202023140752U CN214088645U CN 214088645 U CN214088645 U CN 214088645U CN 202023140752 U CN202023140752 U CN 202023140752U CN 214088645 U CN214088645 U CN 214088645U
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Abstract
The utility model relates to a magnetron sputtering technical field provides many target materials magnetron sputtering negative pole of rotation type, including positive pole and magnet subassembly, seted up on the positive pole and spattered the hole, the magnet subassembly with be provided with target support and a set of target between the positive pole, spatter the hole with form the sputtering district between the target, the target sets up on the target support, the target with magnet subassembly size adaptation, arbitrary the target with the help of the target support is rotatory extremely sputtering district, only rotatory target directly over the magnet subassembly can take place magnetron sputtering, and other targets are extremely weak because of the position department magnetic field of locating, sputter the air current is not enough, can't the sputtering of starting glow, have solved among the prior art a sputtering negative pole can only fix a target and the unable problem of sputtering different materials of same position.
Description
Technical Field
The utility model relates to a magnetron sputtering technical field especially relates to many target material magnetron sputtering negative pole of rotation type.
Background
The working principle of magnetron sputtering is that a permanent magnet forms a magnetic field on the surface of a target material, sputtering process gas (generally argon gas) is introduced into a target material accessory, when sputtering voltage is applied to the target material, an electric field is formed between the target material and an anode, the argon gas is ionized to form plasma under the combined action of the electric field and the magnetic field, argon ions are attracted by the sputtering voltage to accelerate flying to the target material, part of ions with strong energy can bombard atoms on the surface of the target material, the bombarded target material atoms fly away from the target material, and the target material atoms fall on a substrate to be coated to form a film. The conventional magnetron sputtering cathode target is arranged on an oxygen-free copper substrate, a permanent magnet is arranged behind the oxygen-free copper substrate, water is introduced for cooling, and sputtering voltage is applied to the oxygen-free copper substrate and is conducted to the target; the outer side of the sputtering cathode is an anode of the sputtering cathode, the anode is grounded, and in the structure, the magnet, the oxygen-free copper substrate and the target material are all static. The conventional magnetron sputtering cathode structure has the following problems: firstly, one sputtering cathode can only be fixedly provided with one target material, while a magnetron sputtering system generally needs to deposit a plurality of materials and needs a plurality of cathodes, thereby causing the size of a sputtering process chamber to be increased, a vacuum pumping system to be increased and causing the cost of equipment to be increased; secondly, the positions of sputtering cathodes are different, and under certain conditions, the process requirements are best from the condition that the sputtering cathodes are at the same position, and the current design can not realize the sputtering of different materials at the same position.
Therefore, at present, those skilled in the art are in urgent need to design a rotary multi-target magnetron sputtering cathode to solve the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model provides a rotation type multi-target material magnetron sputtering negative pole, this kind of structure has not only solved the process chamber size big, and the problem that equipment cost is high has still realized sputtering different materials in same position.
The technical scheme of the utility model as follows:
the rotary multi-target magnetron sputtering cathode comprises an anode and a magnet assembly, wherein sputtering holes are formed in the anode, a target support and a group of targets are arranged between the magnet assembly and the anode, a sputtering area is formed between the sputtering holes and the targets, the targets are arranged on the target support, the sizes of the targets and the magnet assembly are matched, and any target rotates to the sputtering area by means of the target support.
The target support is in a circular tray shape, the target is arranged at the top of the target support along the circumferential direction, the anode is grounded, a group of sputtering holes are formed, and the sputtering holes are one-to-one opposite to the target.
The device also comprises a positioning rotating frame, wherein the positioning rotating frame and the target support are coaxially arranged, and the positioning rotating frame is fixedly connected with the target support.
The positioning rotating frame and the target support are both provided with cooling runners, and the target support is made of oxygen-free copper.
The magnetic shield is characterized by further comprising a shielding cover, wherein the shielding cover is of a cap-shaped structure and is fixedly grounded on one side of the anode, the shielding cover is provided with a splashing hole, the splashing hole is circular and is opposite to the magnet assembly, and the diameter of the splashing hole is larger than that of the splashing hole.
The magnet assembly comprises a central magnet and an outer ring magnet, and the magnetic poles of the central magnet are opposite to those of the outer ring magnet.
The utility model discloses a theory of operation and beneficial effect do:
the utility model discloses a many targets of rotation type magnetron sputtering negative pole, including positive pole and magnet subassembly, seted up on the positive pole and spattered the hole, the magnet subassembly with be provided with target support and a set of target between the positive pole, spatter the hole with form the sputtering district between the target, the target sets up on the target support, the target with magnet subassembly size adaptation, arbitrary the target with the help of the target support is rotatory extremely the sputtering district, the target is rotatory with the help of target support, and different targets all can be rotated to the just position of magnet subassembly, then stops to fix a position at this position, through leading to the sputtering voltage for the target support to conduct on the target, though all targets of installing on the target support are all electrified, only rotate the target directly over the magnet subassembly and can take place the sputtering because magnetron sputtering requires that there is sputtering voltage, because magnetron sputtering, The magnetic field of sufficient intensity, the gas of sufficient concentration, other target position because the magnetic field is very weak, and sputter the air current not enough, can't start the bright sputtering, and the material of arbitrary target can be selected by oneself as required, and because a plurality of targets are fixed on same target support, rotate to same position and sputter, solved among the prior art that a sputtering cathode can only fix a target and can't sputter different materials in same position the problem.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic structural section view of the present invention;
FIG. 2 is a top view of the multi-group target assembly of the present invention;
fig. 3 is a top view of the structural shielding case of the present invention;
in the figure: 1. the device comprises an anode, 2, a magnet assembly, 3, a target, 4, a target support, 5, sputtering holes, 6, a positioning rotating frame, 7, a shielding cover, 8, sputtering holes, 9 and a connecting block.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive work, are related to the scope of the present invention.
Example 1
As shown in fig. 1 to 3, the rotary multi-target magnetron sputtering cathode includes an anode 1 and a magnet assembly 2, a sputtering hole 5 is formed on the anode 1, a target support 4 and a set of targets 3 are disposed between the magnet assembly 2 and the anode 1, a sputtering region is formed between the sputtering hole 5 and the targets 3, the targets 3 are disposed on the target support 4, the targets 3 are matched with the magnet assembly 2 in size, and any one of the targets 3 rotates to the sputtering region by means of the target support 4.
In the embodiment, more than or equal to 2 targets 3 are arranged in one group, the targets 3 rotate by virtue of the target support 4, different targets 3 can rotate to the position opposite to the magnet assembly 2, then the positioning is stopped at the position, the targets 3 are positioned in the sputtering area, the target support 4 is electrified with sputtering voltage, the targets positioned in the sputtering area form magnetron sputtering, and sputtered atoms pass through the sputtering holes 5 and fall on a substrate to form a film. The target 3 rotates along with the target holder 4 to realize that different targets 3 are sputtered at the same position, and when the required target 3 rotates and is positioned above the magnet assembly 2, only the target 3 directly above the magnet assembly 2 is sputtered because the magnetic field of the positions of the other targets 3 is extremely weak. The material of any target 3 can be selected according to the needs, and because a plurality of targets 3 are fixed on the same target support 4 and rotate to the same position for sputtering, the size of a working chamber for installing a sputtering cathode is reduced, a vacuum chamber is reduced, a vacuum pumping system is reduced, and only one sputtering cathode is needed, so that the cost of the equipment is greatly reduced.
As shown in fig. 1 to 2, the target holder 4 is a circular tray, the target 3 is arranged on the top of the target holder 4 along the circumferential direction, the anode 1 is grounded, the sputtering holes 5 are arranged in a group, and the sputtering holes 5 are opposite to the target 3 one by one.
In the embodiment, the target support 4 is in a circular tray shape, the plurality of targets 3 are circumferentially arranged on the target support 4, when the target support 4 rotates, any target 3 can rotate to a position opposite to the magnet assembly 2 for sputtering, the position, corresponding to the target 3, of the anode 1 is provided with sputtering holes 5, the sputtering holes 5 rotate along with the anode 1, as the target 3 can be sputtered with a thin film at the anode during sputtering, a connecting block 9 is arranged between the anode 1 and the target support 4, so that the anode 1 and the target support 4 are connected and fixed into a whole, the anode 1 and the target support 4 rotate consistently, wherein the connecting block 9 is made of an insulating material, such as ceramic; and one target 3 corresponds to one sputtering hole 5, so that the sputtering holes 5 are ensured to be always opposite to the target 3, the thin films correspondingly formed on the peripheral sides of the sputtering holes 5 on the anode 1 are ensured to be above the corresponding target 3, and the cross contamination caused by the fact that different targets 3 share the same sputtering hole 5 is avoided.
As shown in fig. 1, the device further comprises a positioning rotating frame 6, wherein the positioning rotating frame 6 is coaxially arranged with the target support 4, and the positioning rotating frame 6 is fixedly connected with the target support 4.
In this embodiment, the positioning rotating frame 6 drives the target support 4 to rotate, the coaxial arrangement enables the target support 4 and the anode 1 to rotate around the axis when rotating, any target 3 has the same path and can rotate to the same position, so as to avoid deviation, the positioning rotating frame 6 has the rotating and positioning functions, and drives the target support 4 to rotate and position, so that any designated target 3 can rotate and be fixed right above the magnet assembly 2.
As shown in fig. 1, the positioning rotating frame 6 and the target support 4 are both provided with cooling channels, and the target support 4 is made of oxygen-free copper.
In this embodiment, target support 4 material is anaerobic copper, anaerobic copper has good electrically conductive, heat conductivility, and can not rust, the cooling runner is for setting up at the inside cooling water passageway of location swivel mount 6 and target support 4, the inside water that leads to of cooling runner takes away the heat that 3 sputtering in-process of target produced to make 3 low temperature states of target that keep in the sputtering in-process, stainless steel is chooseed for use to location swivel mount 6, avoid leading to water rusty, and long service life, manufacturing cost has been practiced thrift greatly.
As shown in fig. 1 to 3, the anode structure further comprises a shielding case 7, wherein the shielding case 7 is in a cap-shaped structure, the shielding case 7 is fixedly grounded on one side of the anode 1, the shielding case 7 is provided with a splashing hole 8, the splashing hole 8 is circular, the splashing hole 8 is opposite to the magnet assembly 2, and the diameter of the splashing hole 8 is larger than that of the splashing hole 5.
In the embodiment, the shielding case 7 is grounded and fixed, the splashing holes 8 are formed only at the positions opposite to the magnet assembly 2, the diameter of each splashing hole 8 is larger than that of each splashing hole 5 and smaller than the radius of the inner wall of the cap-shaped shielding case 7, so that the sputtering atoms are prevented from splashing on the shielding case 7 to cause pollution and waste due to the fact that the splashing holes 8 are too small, the shielding case 7 is prevented from losing effect due to the fact that the splashing holes 8 are too large, and one effect is to reduce the argon flow reaching the position of the unselected sputtering target 3; and the other is to prevent the material sputtered from the target 3 above the magnet assembly 2 from falling onto the target 3 covered below the shielding case 7, thereby avoiding the cross contamination of the material.
As shown in fig. 1, the magnet assembly 2 includes a center magnet and an outer ring magnet, the center magnet and the outer ring magnet having opposite poles.
In this embodiment, the central magnet and the outer ring magnet with opposite magnetic poles form a magnetic field, so that the surface of the target 3 moving to the position opposite to the magnet assembly 2 has stronger magnetic field distribution, sputtering voltage is applied to the positioning rotating frame 4, sputtering process gas is introduced near the position of the target 3 to be sputtered, and the target 3 is subjected to magnetron sputtering under the combined action of electric field force, magnetic field force and air flow.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. The rotary multi-target magnetron sputtering cathode is characterized by comprising an anode (1) and a magnet assembly (2), wherein sputtering holes (5) are formed in the anode (1), a target support (4) and a group of targets (3) are arranged between the magnet assembly (2) and the anode (1), a sputtering area is formed between the sputtering holes (5) and the targets (3), the targets (3) are arranged on the target support (4), the targets (3) are matched with the magnet assembly (2) in size, and any target (3) rotates to the sputtering area by means of the target support (4).
2. The rotary multi-target magnetron sputtering cathode according to claim 1, wherein the target holder (4) is in a circular tray shape, the target (3) is arranged on the top of the target holder (4) along the circumferential direction, the anode (1) is arranged in a ground connection manner, the sputtering holes (5) are arranged in a group, and the sputtering holes (5) are opposite to the target (3) one by one.
3. The rotary multi-target magnetron sputtering cathode according to claim 1, further comprising a positioning rotating frame (6), wherein the positioning rotating frame (6) is coaxially arranged with the target support (4), and the positioning rotating frame (6) is fixedly connected with the target support (4).
4. The rotary multi-target magnetron sputtering cathode according to claim 3, wherein the positioning rotating frame (6) and the target material support (4) are both provided with a cooling channel, and the target material support (4) is made of oxygen-free copper.
5. The rotary multi-target magnetron sputtering cathode according to claim 1, further comprising a shielding case (7), wherein the shielding case (7) is in a cap-shaped structure, the fixed ground is arranged on one side of the anode (1), the shielding case (7) is provided with a splashing hole (8), the splashing hole (8) is circular, the splashing hole (8) is arranged opposite to the magnet assembly (2), and the diameter of the splashing hole (8) is larger than that of the splashing hole (5).
6. The rotary multi-target magnetron sputtering cathode according to claim 1, wherein the magnet assembly (2) comprises a central magnet and an outer ring magnet, the central magnet and the outer ring magnet having opposite poles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023140752.8U CN214088645U (en) | 2020-12-23 | 2020-12-23 | Rotary multi-target magnetron sputtering cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023140752.8U CN214088645U (en) | 2020-12-23 | 2020-12-23 | Rotary multi-target magnetron sputtering cathode |
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| Publication Number | Publication Date |
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| CN214088645U true CN214088645U (en) | 2021-08-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202023140752.8U Active CN214088645U (en) | 2020-12-23 | 2020-12-23 | Rotary multi-target magnetron sputtering cathode |
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