CN111385953A - Radio frequency induction coupling linear ion source - Google Patents

Radio frequency induction coupling linear ion source Download PDF

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Publication number
CN111385953A
CN111385953A CN201811616746.XA CN201811616746A CN111385953A CN 111385953 A CN111385953 A CN 111385953A CN 201811616746 A CN201811616746 A CN 201811616746A CN 111385953 A CN111385953 A CN 111385953A
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radio frequency
ion source
discharge chamber
plasma
antenna
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CN201811616746.XA
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陈庆川
聂军伟
黄琪
石连天
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Zhonghe Tongchuang Chengdu Technology Co ltd
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Chengdu Tongchuang Material Surface Technology Co ltd
Southwestern Institute of Physics
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/02Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/03Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using electrostatic fields
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/02Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/10Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00Auxiliary systems
    • H05H2242/20Power circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

The invention belongs to the technical field of ion beam control, and particularly relates to a radio frequency induction coupling linear ion source which comprises an ion source shielding shell, a radio frequency coupling antenna, a dielectric coupling window for transmitting radio frequency power and isolating a discharge chamber and an antenna chamber, a plasma discharge chamber side wall for containing discharge plasma, a multi-grid ion beam extraction system for extracting ion beams from the plasma discharge chamber, and a radio frequency neutralizer for providing initial electrons into the discharge chamber and providing neutralizing electrons into the ion beams and a substrate; it can produce high-uniformity large-area narrow-long linear ion beam current in a large size range, and is suitable for processes of ion beam cleaning, etching, film deposition and the like of large-area substrates.

Description

Radio frequency induction coupling linear ion source
Technical Field
The invention belongs to the technical field of ion beam control, and particularly relates to a radio frequency induction coupling linear ion source.
Background
The radio frequency induction coupling ion source generates plasma by adopting radio frequency induction coupling, has no built-in electrode, has the characteristics of no pollution, high plasma density and the like, and is the ion source which is most widely applied in the fields of modern thin film material preparation, material surface modification, ultra-large scale integrated circuits and high-precision large-scale optical element micro-machining at present. According to the structural form of the radio frequency antenna, the radio frequency antenna mainly has two types, namely a spiral tube type and a disk type. The coil-shaped radio frequency induction coupling ion source adopts a spring-shaped spiral antenna, the antenna is spirally coiled outside the dielectric discharge chamber, electrons in the discharge chamber are accelerated by an induction coupling electric field to do spiral line motion along the direction parallel to the inner wall of the discharge chamber due to the skin effect of radio frequency power transmission, and large-area high-uniformity ion beams are difficult to generate. The disk-odor type radio frequency ion source adopts a planar spiral radio frequency antenna to excite plasma, and the plasma density can reach 1011-1012/cm3Compared with the conventional capacitive coupling type radio frequency discharge plasma, the density is 1-2 orders of magnitude higher, the uniformity is good, and the large-scale production is easy. The ion source has the advantages of simple structure, no electrode pollution, controllable ion beam energy, good beam density uniformity, capability of generating ion beams with larger areas and the like, and becomes one of the most widely applied ion sources in the processing field of flat panel displays, semiconductors and optical devices at present. With the ever increasing ion beam extraction cross-sections required for these applications, there is a significant limitation in relying solely on increasing aperture, which has substantially reached the principle and structural limits of ion sources. On one hand, the areas of the radio frequency antenna and the dielectric coupling window are inevitably increased due to the increase of the beam spot, the larger the antenna length is, the larger the inductance is, the larger the distributed capacitance and the radio frequency voltage at two ends of the antenna are, the high voltage at two ends of the antenna can cause the capacitive coupling between the radio frequency antenna and the plasma load and the discharge ignition of the radio frequency antenna, so that the problems of uneven plasma density distribution, unstable impedance matching between a radio frequency power supply and the plasma load, low radio frequency coupling efficiency and the like are caused, and the plasma density is more uneven due to the standing wave effect of the overlarge antenna. At the same time, the dielectric is used for the strength requirement of the coupling window for isolating the vacuum structureThe larger the mass coupling window is, the thickness of the coupling window needs to be increased, the coupling efficiency and the uniformity of plasma density distribution are further reduced, and the coupling window with the larger size is difficult to meet the dual requirements of vacuum isolation and radio frequency power transmission. On the other hand, the beam spot is increased, the design and processing of the large-area ion source extraction grid become more and more difficult, and the larger the extraction grid, the more difficult the deformation amount of the extraction grid is to control. The traditional large-area ion source grid design basically reaches the engineering limit of an ion source structure and the performance limit of materials, the problems of deformation control and thermal stability become insurmountable technical bottlenecks of the large-area ion source grid design, further improvement is difficult, and further increase of beam spots of an ion beam is restricted.
In view of the above limitations and deficiencies of the prior art, there is a need for an ion source capable of generating large-area and high-uniformity ion beams and an ion beam processing apparatus using the ion source to meet the ion beam processing requirements of large-sized workpieces, to realize the industrial application of the ion beam technology to large-area workpieces, to further reduce the equipment cost, to simplify the process flow, and to improve the process quality and the work efficiency.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a radio frequency induction coupling linear ion source which can generate a large-area narrow and long linear ion beam flow with high uniformity in a larger size range and is suitable for processes of ion beam cleaning, etching, film deposition and the like of a large-area substrate.
The technical scheme of the invention is as follows:
an rf inductively coupled linear ion source comprising an ion source shield enclosure, an rf coupling antenna, a dielectric coupling window for transmitting rf power and isolating a discharge chamber from the antenna chamber, a plasma discharge chamber sidewall for containing a discharge plasma, a multi-grid ion beam extraction system for extracting an ion beam from the plasma discharge chamber, an rf neutralizer for providing initial electrons into the discharge chamber and neutralizing electrons into the ion beam and substrate;
the plasma source is characterized by further comprising an ion beam screen grid power supply, an accelerating grid power supply, a radio frequency power generator and a matching network, wherein the ion beam screen grid power supply is used for supplying bias voltage to the ion source screen grid, the accelerating grid and the ground grid;
the lower end of the ion source shielding shell is provided with an opening which is an ion beam leading-out channel, and the side wall of the ion source shielding shell is provided with a water cooling structure in order to prevent the temperature rise of the ion source during long-time working from being too high; the radio frequency coupling antenna is positioned at the upper end of an inner cavity of the ion source and is a single-group 'similar sports field runway type' plane spiral antenna, the outer surface of the radio frequency coupling antenna is plated with silver and is fixed on the side wall of the shielding shell of the ion source in a ceramic insulator clamping mode, and the radio frequency coupling antenna is connected with the matching network, the blocking capacitor and the radio frequency power supply through a radio frequency feed-in interface on the shielding shell of the ion source;
the plasma discharge chamber of the ion source is positioned below the radio frequency antenna, the side wall of the plasma discharge chamber is provided with an air inlet, working gas enters the plasma discharge chamber through the side wall of the shielding shell of the ion source and the air inlet of the side wall of the plasma discharge chamber, and in order to isolate the working voltage on the plasma discharge chamber and the ground potential of the air passage of the ion source when the ion source works, the air passage between the side wall of the shielding shell of the ion source and the side wall of the plasma discharge chamber is provided with a high-voltage insulation air passage;
in order to further improve the uniformity of plasma in the discharge chamber, gas is supplied into the plasma discharge chamber through a multi-path gas supply structure, a gas distributor adopts a hole or seam structure for supplying gas along the length direction of a discharge cavity, and a suspension baffle plate is arranged at the lower end of the gas distributor and fixed on the discharge side wall of the plasma;
the ion beam extraction system is positioned at the lower end of the discharge chamber and consists of a screen grid, an acceleration grid and a ground grid;
the lower outer side of the radio frequency induction coupling linear ion source beam is provided with a neutralizer.
A comb-shaped Faraday electrostatic shield is arranged above a dielectric coupling window of the plasma discharge chamber; in order to further improve the density and uniformity of the radio frequency discharge plasma, magnetic steel for generating a plasma cusp field is arranged between the side wall of the plasma discharge chamber and the ion source shielding shell.
The radio frequency coupling antenna is an antenna group consisting of a radio frequency antenna and a radio frequency antenna, and radio frequency energy is fed into the radio frequency coupling antenna and the radio frequency coupling antenna through a radio frequency power supply, a radio frequency power supply A, a matching network A and a matching network B, and a blocking capacitor A and a blocking capacitor B respectively;
the radio frequency voltage and the power of the radio frequency power supply and the radio frequency voltage and the power of the radio frequency power supply are independently adjusted, the phase of the radio frequency power supply and the radio frequency voltage and the power of the radio frequency power supply can be controlled by the phase adjuster, and the uniformity of the discharge plasma can be further improved by controlling the phase and the power of the radio frequency power supply and the radio frequency voltage.
The ion source shielding shell is a cubic box body made of metal materials.
The ion source plasma discharge chamber is a cubic cavity formed by a dielectric coupling window, a stainless steel plasma discharge chamber side wall and a screen grid of an ion beam extraction system.
The dielectric coupling window is quartz or a ceramic material.
The distance between the gas path at the inner end part of the plasma discharge chamber and the narrow side wall of the plasma discharge chamber is 150-350 mm, and the distance between the gas paths is 300-350 mm;
the grid electrode assembly is designed in a narrow and long shape, is integrally installed and is integrally made of sputtering-resistant materials such as molybdenum, graphite and the like; the thickness of each grid electrode in the ion beam extraction area is not more than 1.2mm, the distance between the grid electrodes is not more than 1.5mm, the grid electrode extraction holes are arranged in a honeycomb shape, and the extraction aperture is not more than 2.5 mm.
The invention has the beneficial effects that:
the invention adopts the design of a narrow and long structure with a built-in vacuum chamber, and the ion source can be arranged in the process vacuum chamber, thereby reducing the thickness of the dielectric coupling window and improving the radio frequency coupling efficiency; and single group or multi-group 'playground runway type' plane spiral radio frequency antenna, cusp field, and multi-channel gas supply and suspension baffle structure are used to improve the uniformity of the inductively coupled discharge plasma; the comb-shaped Faraday electrostatic shielding is adopted, so that the capacitive coupling between the radio frequency antenna and the discharge plasma is reduced, and the etching and pollution of the plasma to the coupling window are reduced. The radio frequency inductive coupling linear ion source with the structure has the advantages of being capable of providing high-uniformity large-area narrow-long linear ion beam current, capable of achieving meter level in the longitudinal length direction, free of pollution, high in inductive coupling efficiency, large in beam spot, good in uniformity, wide in ion beam energy and beam current adjusting range, simple in structure, good in stability, low in cost, capable of working reliably in various inert, oxidizing or reducing working atmospheres and the like. When the ion beam treatment process is carried out by using the invention, the large-area base material can continuously pass through the ion beam outlet by the scanning or continuous movement of the workpiece platform in the width direction of the ion beam, thereby realizing the treatment of the workpiece with large base area. The invention solves the problems of the prior art that the beam spot area of the ion beam is limited and the like, so that the device and the process are difficult to be applied to various ion beam processing devices and processes, the processing difficulty of the ion beam of a large-area substrate or a batch arrangement substrate is reduced, the process flow and the control are simplified, and the ion beam processing efficiency is improved, thereby effectively realizing the high-efficiency ion beam process processing of the large-area substrate. The method is particularly suitable for cleaning and etching large-area matrixes or matrixes arranged in batches, ion beam sputtering deposition and auxiliary deposition plasma beam treatment processes, including cleaning and etching large-area gratings and large-area semiconductor substrates.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment 1 of an rf stripe ion source according to the present invention;
fig. 2 is a graph showing an example of the beam uniformity distribution measurement result in the ion source length direction of the rf inductively coupled linear ion source shown in embodiment 1;
FIG. 3 is a schematic structural diagram of an embodiment 2 of an RF stripe ion source according to the present invention;
fig. 4 is a schematic structural diagram of an rf stripe ion source embodiment 3 provided in the present invention;
in the drawings, 1. an ion source shielding housing; 2. a plasma discharge chamber sidewall; 3. a gas distributor; 4. a dielectric coupling window; 5. an ion source cavity; 6. a high voltage insulating gas path device; 7. an ion beam extraction system; 8. a screen grid; 9. an acceleration grid 10, a ground grid; 11. a high pressure gas cylinder; 12. a radio frequency power supply; 13. a neutralizer radio frequency power supply; 14. a neutralizer; 15. a neutralizer collector power supply; 16. a neutralizer anode power supply; 17. a plasma discharge chamber; 18. a suspension baffle; 19. a radio frequency coupled antenna; 20. a gas circuit; 21. a screen grid power supply; 22. an acceleration power supply; 23. a blocking capacitor A; a "comb" faraday electrostatic shield; 25. magnetic steel; 26. a radio frequency power supply A; 27. a dc blocking capacitor B28; the radio frequency coupling antenna a.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
The working principle of the laser resonance driven bolus injection system is explained below with reference to fig. 1.
Example one
As shown in fig. 1, an rf inductively coupled linear ion source includes: an ion source shielding housing 1, an rf coupling antenna 19, a dielectric coupling window 4 for transmitting rf power and isolating the discharge chamber from the antenna chamber, a plasma discharge chamber sidewall 2 for containing a discharge plasma, a multi-grid ion beam extraction system 7 for extracting an ion beam from the plasma discharge chamber, an rf neutralizer 14 for providing initial electrons into the discharge chamber and neutralizing electrons into the ion beam and substrate. Further comprises an ion beam screen grid power supply 21 for supplying bias voltage to the ion source screen grid 8, the accelerating screen grid 9 and the ground grid 10, an accelerating screen power supply 22, a radio frequency power generator 12 and a matching network for supplying radio frequency power to the radio frequency coupling antenna 19, a gas supply system for inputting working gas into the plasma discharge chamber, and a neutralizer radio frequency power supply 13, a collector power supply 15 and an anode power supply 16 for supplying power to the radio frequency neutralizer 14.
The ion source shielding shell 1 is a cubic box made of metal materials, the lower end of the ion source shielding shell is provided with an opening, the ion source shielding shell is an ion beam leading-out channel, and in order to prevent the temperature rise of the ion source during long-time working from being too high, the side wall of the ion source shielding shell 1 is provided with a water cooling structure. The radio frequency coupling antenna 19 is positioned at the upper end of the ion source inner cavity 5, is a single-group 'similar sports field runway type' plane spiral antenna, is silver-plated on the outer surface and is fixed on the side wall of the ion source shielding shell 1 in a ceramic insulator clamping mode, and is connected with the matching network, the blocking capacitor 23 and the radio frequency power supply 12 through a radio frequency feed-in interface on the ion source shielding shell 1.
The ion source plasma discharge chamber 17 is located below the radio frequency antenna 19 and is a cubic cavity formed by the dielectric coupling window 4, the stainless steel plasma discharge chamber side wall 2 and the screen 8 of the ion beam extraction system 7, and the dielectric coupling window 4 is made of quartz or ceramic material. The side wall 2 of the plasma discharge chamber is provided with an air inlet, working gas enters the plasma discharge chamber 5 through the air inlet of the side wall 1 of the ion source shielding shell and the side wall 2 of the plasma discharge chamber, and a high-voltage insulating air path device 6 is arranged on an air path between the side wall of the ion source shielding shell 1 and the side wall 2 of the plasma discharge chamber in order to isolate the working voltage on the plasma discharge chamber 17 and the ground potential of an ion source air path 20 when the ion source works. In order to further improve the uniformity of the plasma in the discharge chamber, gas is supplied into the plasma discharge chamber 17 through a multi-path gas supply structure, wherein the distance between the gas path at the inner end part of the plasma discharge chamber 17 and the narrow side of the side wall 2 of the plasma discharge chamber is 150-350 mm, and the distance between the gas paths is 300-350 mm. The gas distributor 3 adopts a hole or seam structure for supplying gas along the length direction of the discharge cavity, the lower end of the gas distributor is provided with a suspension baffle plate, and the gas distributor is fixed on the plasma discharge side wall 2.
The ion beam extraction system 7 is positioned at the lower end of the discharge chamber and consists of a screen 8, an accelerating grid 9 and a ground grid 10. The grid electrode assembly is designed in a narrow and long shape, is integrally installed and is integrally made of sputtering-resistant materials such as molybdenum, graphite and the like. The thickness of each grid electrode in the ion beam extraction area is not more than 1.2mm, the distance between the grid electrodes is not more than 1.5mm, the grid electrode extraction holes are arranged in a honeycomb shape, and the extraction aperture is not more than 2.5mm, so that the transparency of the grid electrode is increased to the maximum extent, and the ion beam extraction efficiency is improved. In order to reduce or eliminate grid deformation or grid spacing change caused by different working temperature rises of the grids when the grid assembly works so as to further influence the beam characteristics of the ion beam, the stability and the reliability of the work of the ion source are improved, and the grids are installed by adopting a clamping mode and a self-adaptive adjusting tensioning device. When the ion source works, a positive bias voltage of 50-1500V is applied on the screen grid, and a negative bias voltage of 50-900V is applied on the accelerating grid.
To assist in the glow discharge of the rf inductively coupled linear ion source and to neutralize the charge on the ion beam and the substrate, a neutralizer 14 is provided outside the beam downstream of the rf inductively coupled linear ion source.
The working method of the radio frequency induction coupling linear ion source comprises the following steps: the neutralizer 14 first initiates a glow discharge to generate an electron beam, and a portion of the electrons are introduced into the plasma discharge chamber by applying a rectangular pulse voltage to the screen 8 of the large area linear rf ion source. The radio frequency power supply 12 feeds radio frequency energy into the radio frequency coupling antenna 19 through a matching network, a radio frequency electric field is induced in the discharge cavity through the radio frequency antenna 19, electrons in the plasma discharge cavity are accelerated by the radio frequency electric field, so that the working gas is ionized to generate radio frequency inductively coupled plasma, and 50-1500V and 50-900V bias voltages are respectively applied to the screen grid 8 and the acceleration grid 9 through the screen grid power supply 21 and the acceleration grid power supply 22 to extract ions from the plasma to form ion beams. Beam characteristics such as ion beam energy, current density, ion beam uniformity and the like can be flexibly and conveniently adjusted by adjusting input radio frequency power, fed working gas and working voltage on an ion source grid; and the energy and the current intensity of the electrons emitted by the neutralizer are adjusted, so that the charge accumulation on the ion beam and the substrate is fully neutralized. The radio frequency induction coupling linear ion source is convenient to adapt to various different ion beam processing technologies, so that the high-efficiency ion beam processing is effectively carried out on large-area substrates or batch substrates. The RF power range of the large-area RF ion source is 200-2Wherein the beam current nonuniformity in the long direction of 1000mm is better than +/-7%, as shown in figure 2. The ion source has the characteristics of low maintenance rate, simple structure, easy disassembly and maintenance, long service life, high energy utilization rate and the like, and can realize reliable and consistent operation in inert and oxidizing environments.
Example two
As shown in fig. 3, in the embodiment 1, a "comb" faraday electrostatic shield 24 is disposed above the dielectric coupling window 4 of the plasma discharge chamber 17 to reduce the capacitive coupling between the antenna and the discharge plasma, improve the discharge efficiency, and reduce the etching and contamination of the coupling window by the plasma. In order to further improve the density and uniformity of the radio frequency discharge plasma, magnetic steel 25 for generating a plasma cusp field is arranged between the side wall 2 of the plasma discharge chamber and the ion source shielding shell 1.
EXAMPLE III
As shown in fig. 1, based on embodiment 1, the rf coupling antenna is an antenna group formed by the rf antenna 19 and the rf antenna 28, and rf energy is fed into the rf coupling antenna 19 and the rf coupling antenna a28 through the rf power supply 12, the rf power supply a26, the matching network a and the matching network B, the dc blocking capacitor a23, and the dc blocking capacitor B27, respectively. The rf voltage and power levels of the rf power supplies 12 and 26 are independently adjustable, and their phases may be controlled by phase adjusters. The discharge plasma uniformity can be further improved by controlling the phase and power of the rf power supplies 12 and 26.

Claims (7)

1. An rf inductively coupled linear ion source comprising an ion source shield enclosure, an rf coupling antenna, a dielectric coupling window for transmitting rf power and isolating a discharge chamber from the antenna chamber, a plasma discharge chamber sidewall for containing a discharge plasma, a multi-grid ion beam extraction system for extracting an ion beam from the plasma discharge chamber, an rf neutralizer for providing initial electrons into the discharge chamber and neutralizing electrons into the ion beam and substrate;
the plasma source is characterized by further comprising an ion beam screen grid power supply, an accelerating grid power supply, a radio frequency power generator and a matching network, wherein the ion beam screen grid power supply is used for supplying bias voltage to the ion source screen grid, the accelerating grid and the ground grid;
the method is characterized in that:
the lower end of the ion source shielding shell is provided with an opening which is an ion beam leading-out channel, and the side wall of the ion source shielding shell is provided with a water cooling structure in order to prevent the temperature rise of the ion source during long-time working from being too high; the radio frequency coupling antenna is positioned at the upper end of an inner cavity of the ion source and is a single-group 'similar sports field runway type' plane spiral antenna, the outer surface of the radio frequency coupling antenna is plated with silver and is fixed on the side wall of the shielding shell of the ion source in a ceramic insulator clamping mode, and the radio frequency coupling antenna is connected with the matching network, the blocking capacitor and the radio frequency power supply through a radio frequency feed-in interface on the shielding shell of the ion source;
the plasma discharge chamber of the ion source is positioned below the radio frequency antenna, the side wall of the plasma discharge chamber is provided with an air inlet, working gas enters the plasma discharge chamber through the side wall of the shielding shell of the ion source and the air inlet of the side wall of the plasma discharge chamber, and in order to isolate the working voltage on the plasma discharge chamber and the ground potential of the air passage of the ion source when the ion source works, the air passage between the side wall of the shielding shell of the ion source and the side wall of the plasma discharge chamber is provided with a high-voltage insulation air passage;
in order to further improve the uniformity of plasma in the discharge chamber, gas is supplied into the plasma discharge chamber through a multi-path gas supply structure, a gas distributor adopts a hole or seam structure for supplying gas along the length direction of a discharge cavity, and a suspension baffle plate is arranged at the lower end of the gas distributor and fixed on the discharge side wall of the plasma;
the ion beam extraction system is positioned at the lower end of the discharge chamber and consists of a screen grid, an acceleration grid and a ground grid;
the lower outer side of the radio frequency induction coupling linear ion source beam is provided with a neutralizer.
2. The rf inductively coupled linear ion source of claim 1 wherein: a comb-shaped Faraday electrostatic shield is arranged above a dielectric coupling window of the plasma discharge chamber; in order to further improve the density and uniformity of the radio frequency discharge plasma, magnetic steel for generating a plasma cusp field is arranged between the side wall of the plasma discharge chamber and the ion source shielding shell.
3. The rf inductively coupled linear ion source of claim 1 wherein: the radio frequency coupling antenna is an antenna group consisting of a radio frequency antenna and a radio frequency antenna, and radio frequency energy is fed into the radio frequency coupling antenna and the radio frequency coupling antenna through a radio frequency power supply, a radio frequency power supply A, a matching network A and a matching network B, and a blocking capacitor A and a blocking capacitor B respectively;
the radio frequency voltage and the power of the radio frequency power supply and the radio frequency voltage and the power of the radio frequency power supply are independently adjusted, the phase of the radio frequency power supply and the radio frequency voltage and the power of the radio frequency power supply can be controlled by the phase adjuster, and the uniformity of the discharge plasma can be further improved by controlling the phase and the power of the radio frequency power supply and the radio frequency voltage.
4. The rf inductively coupled linear ion source of claim 1 wherein: the ion source shielding shell is a cubic box body made of metal materials.
5. The rf inductively coupled linear ion source of claim 1 wherein: the ion source plasma discharge chamber is a cubic cavity formed by a dielectric coupling window, a stainless steel plasma discharge chamber side wall and a screen grid of an ion beam extraction system.
6. The rf inductively coupled linear ion source of claim 1 wherein: the dielectric coupling window is quartz or a ceramic material.
7. The rf inductively coupled linear ion source of claim 1 wherein: the distance between the gas path at the inner end part of the plasma discharge chamber and the narrow side wall of the plasma discharge chamber is 150-350 mm, and the distance between the gas paths is 300-350 mm;
the grid electrode assembly is designed in a narrow and long shape, is integrally installed and is integrally made of sputtering-resistant materials such as molybdenum, graphite and the like; the thickness of each grid electrode in the ion beam extraction area is not more than 1.2mm, the distance between the grid electrodes is not more than 1.5mm, the grid electrode extraction holes are arranged in a honeycomb shape, and the extraction aperture is not more than 2.5 mm.
CN201811616746.XA 2018-12-28 2018-12-28 Radio frequency induction coupling linear ion source Pending CN111385953A (en)

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CN112366126A (en) * 2020-11-11 2021-02-12 成都理工大学工程技术学院 Hall ion source and discharge system thereof
CN113053709A (en) * 2021-03-12 2021-06-29 中国电子科技集团公司第四十八研究所 Strip-shaped grid mesh component for ion source
CN113782414A (en) * 2021-09-06 2021-12-10 中国科学院近代物理研究所 Low-energy-dispersion high-brightness negative oxygen ion generating device
CN114051307A (en) * 2021-10-18 2022-02-15 核工业西南物理研究院 Magnetic confinement radio frequency induction coupling plasma source
CN114258182A (en) * 2021-12-17 2022-03-29 离子束(广州)装备科技有限公司 Cusp field ion source and ion beam generating method
CN114360990A (en) * 2021-11-30 2022-04-15 核工业西南物理研究院 Multi-grid radio frequency inductive coupling ion source
WO2023040676A1 (en) * 2021-09-15 2023-03-23 中山市博顿光电科技有限公司 Radio-frequency ion source
CN115938905A (en) * 2022-12-27 2023-04-07 天津吉兆源科技有限公司 Radio frequency ion source with built-in vacuum capacitor
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