CN104411082A - Plasma source system and plasma generating method - Google Patents
Plasma source system and plasma generating method Download PDFInfo
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- CN104411082A CN104411082A CN201410638080.3A CN201410638080A CN104411082A CN 104411082 A CN104411082 A CN 104411082A CN 201410638080 A CN201410638080 A CN 201410638080A CN 104411082 A CN104411082 A CN 104411082A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/54—Plasma accelerators
Abstract
The invention discloses a plasma source system and a plasma generating method. The system comprises pipeline transmission equipment for transporting to-be-reacted gas, an annular magnetic field generator and direct-current biasing equipment with adjustable potentials, magnetic penetration and electric conduction as well as plasma reaction equipment with a cylindrical cavity; the middle axes of the magnetic field generator and the plasma reaction equipment coincide with each other; a strong electric field is formed in the cylindrical cavity; an opening is formed at one end of the plasma reaction equipment away from the direct-current biasing equipment; and the magnetic field generator and the plasma reaction equipment form a divergent magnetic field at the opening. A quasi-neutral high-energy plasma beam is generated in the use of the energy supplying of electromagnetic waves and the rational design of the magnetic field; a divergent magnetic field structure is obtained at the opening of the plasma reaction equipment; plasmas and electrons can be ejected simultaneously; as the high-energy ion beams are obtained, the quasi-neutrality of the beam is guaranteed, so that the structure of a cathode electron source is omitted; the cost is reduced, the structure is simplified and the pollution of the cathode is avoided.
Description
Technical field
The present invention relates to plasma source technology, particularly relate to a kind of straight plasma source system and plasma generation method.
Background technology
Plasma source can produce active particle or group, can be used as ion assisted sputtering deposition and diamond like carbon deposition.The important key element of two of the energetic ion line produced is: the size of ion energy and ion beam current.According to different process requirements, required ion energy size and ion beam current size are had nothing in common with each other.Traditional plasma source regulates ion energy and ion beam current in the voltage and current size by adjustment discharge anode, and the value both often simultaneously changing, this gropes to bring very large puzzlement to technique.
In addition, traditional ion source also needs an additional cathodic electricity component to carry out neutralize ions line, thus ensure the uniformity of line, it is the electric discharge infringement that the electrically non-conductive material that will deposit avoids because charge accumulated brings, cathodic electricity component is very fragile, often need frequent replacing, and some hot filament cathode can bring cathode contamination, be lowered into film quality.
Plasma technology can be used as synthesis new material, such as utilizes plasma source to carry out chemical vapour deposition (CVD) (CVD) or physical vapour deposition (PVD) (PVD); Also can be used for processing material, such as utilize plasma to carry out plasma etching dry process to material, utilize plasma to clean material surface, and surface active etc. is carried out to material.The technical requirement in different application article on plasma sources is also different.
In current plasma technology, more typical ion source as material surface process is hall ion source (end hall plasma source), this ion source utilizes Hall effect to produce and draws ion beam, in vacuum coating process, Ions Bombardment can be carried out to base material to clean and the conveying of deposition process intermediate ion bombarding energy, be widely used in: anti-reflection film, glasses plated film, fiber optics, high reflective mirror, hot cold mirror, low drifting filter, low pass filter, on-line cleaning, diamond like carbon deposition etc.The growth of film can be improved, optimize membrane structure, strengthen consistency and the repeatability of plated film, low-temperature and high-speed rate plated film, remove surface of the work water and hydrocarbon, enhanced film density, reduces internal stress, the molecule that clean adhesion is weak, intensified response Activity of radioactive gas, thus make thin film composition be easy to control.
As shown in Figure 1, hall ion source is by discharge anode, and cathode filament, magnet forms for the structure of this hall ion source.Gas participates in electric discharge by entering bottom anode in region of discharge, produces taper magnetic field, be provided with cathode filament on the top of region of discharge in region of discharge by magnet.As required, ionogenic working gas is argon gas, and reacting gas can use oxygen, nitrogen and the multiple gases such as hydrocarbon.Hot electron is produced after region of discharge upper cathodic filament heating, when ionogenic anode imposes positive potential, electronics is anode motion under the effect of electric field, because the effect in magnetic field exists, electronics advances with helical orbit around the magnetic line of force, and colliding with work or the atom of reacting gas makes its ionization.Ion is accelerated under the effect of Hall field obtains corresponding energy, and the part hot electron launched with filament cathode forms nearly plasma, is emitted to have an effect with substrate to reach clean and the object of assisted deposition by plasma source.The electronics that cathode filament is launched has two effects: the first, and provide electronics to region of discharge, the second, the space charge of counterion bundle, improving the ion beam launched in Hall source is the beam-plasma to a certain degree compensated.
These ionogenic life-spans above-mentioned and performance are mainly subject to the restriction of hot cathode filament or hollow cathode electron source.Hot cathode filament or hollow cathode electron source are used to provide plasma electric from required initiating electron, and in and negative beam needed for positive ion beam, hollow cathode electron source produces electronic beam current by the outside scattered electron of heat hot cathode material, these hot cathode materials are very fragile, very easily lost efficacy because being subject to the erosion pollution of ion beam current, therefore the life-span is difficult to improve; And add the complexity of system, also reduce the reliability of system simultaneously.Because different technique needs, can change ion beam current size when adjustment ion energy, this makes adjusting process very complicated loaded down with trivial details simultaneously.
Summary of the invention
Based on this, be necessary to provide one can not use hot cathode filament or hollow cathode electron source, and the plasma source system that ion energy and ion beam current size separately can be controlled.
A kind of plasma source system, comprise the pipeline transmitting device for carrying question response gas, the magnetic field generation device of annular, the direct current (DC) bias device of the saturating magnetic conductive that current potential is adjustable and there is the plasma reaction device of circular cylindrical cavity, the axis of described magnetic field generation device and plasma reaction device overlaps, highfield is formed in described circular cylindrical cavity, described pipeline transmitting device is through the center of described direct current (DC) bias device, and the axis of described pipeline transmitting device delivery outlet overlaps with the axis of described circular cylindrical cavity, described plasma reaction device is opening away from one end of described direct current (DC) bias device, and described magnetic field generation device and plasma reaction device form divergence form magnetic field at this opening part.
In addition, additionally provide a kind of plasma generation method, the method performs based on above-mentioned plasma source system, and the method comprises:
Question response gas is delivered to described plasma reaction device by described pipeline transmitting device;
Described magnetic field generation device and plasma reaction device power on, in described circular cylindrical cavity, form highfield by standing wave effect;
Question response gas is breakdown under the effect of this highfield, forms the plasma of quasi-neutrality;
This plasma outwards sprays quasi-neutrality ion beam current under the effect in described divergence form magnetic field;
Wherein, the described direct current (DC) bias device that current potential is adjustable by described plasma and ion beam current electrical contact, thus regulates current potential to control the ion energy of ion beam current inside.
Above-mentioned plasma source system provides energy by electromagnetic wave, by reasonably designing externally-applied magnetic field, can produce a kind of high energy plasma line of quasi-neutrality under the effect of additional magnetic field generation device; A divergence form magnetic field structure is obtained in the exit of plasma reaction device, this divergence form magnetic field structure act as the effect of virtual jet pipe, can spray when ion and electron synchrotron, the quasi-neutrality of line can be ensured while obtaining energetic ion line, thus eliminate the structure of cathodic electricity component, while reducing costs simplified structure, also avoid the pollution that negative electrode brings.Controlling the size of ion energy by adding direct current (DC) bias device, the adjustment of ion energy and ion beam current size can be kept apart like this, thus shorten the time that technique gropes greatly, efficiency research and development being provided and producing.The energetic ion line produced can be used in such as material surface cleaning, and material surface etches, in the material processed fields such as material surface modifying and space flight electric propulsion.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of the medium ion source system of a preferred embodiment of the present invention;
Fig. 2 is the cross section structure schematic diagram of the medium ion source system of another preferred embodiment of the present invention.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The principle of electromagnetic transmission: after electromagnetic wave produces in power supply, through the adjustment of adaptation, makes the energy being reflected back power supply reach minimum, matching network forms standing wave mode.In the position of radio-frequency coil, there is magnetic field and the electromotive force of concussion of concussion in discharge cavity inside in electromagnetic wave, and the electromotive force of this concussion can be used for accelerate free electron, thus is gas breakdown preparation high energy electron.And after gas is breakdown, plasma forms stable discharging, then can change the condition of overall matching network, need to readjust adaptation.
The principle that plasma produces: after the electromagnetic wave electric field strength forming resonance exceedes the threshold value of gas breakdown, passing into working gas will by electromagnetic wave electric field breakdown, after the transporting of charged particle, form stable plasma, now ionisation of gas efficiency is relevant with the active diffusion length of electronics, the existence of outside axial magnetic field, constrain the diffusion of electronics diametrically, increase the active diffusion length of electronics, thus improve ionisation of gas rate and utilization ratio, and then improve the efficiency of system.
Refer to Fig. 1 and Fig. 2, the medium ion source system of present pre-ferred embodiments comprises the pipeline transmitting device 110 for carrying question response gas, the magnetic field generation device 120 of annular, the direct current (DC) bias device 130 of the saturating magnetic conductive that current potential is adjustable and there is the plasma reaction device 140 of circular cylindrical cavity, the axis of described magnetic field generation device 120 and plasma reaction device 140 overlaps, highfield 150 is formed in described circular cylindrical cavity, described pipeline transmitting device 110 is through the center of described direct current (DC) bias device 130, and the axis of described pipeline transmitting device 110 delivery outlet overlaps with the axis of described circular cylindrical cavity, described plasma reaction device 140 is opening away from one end of described direct current (DC) bias device 130, and described magnetic field generation device 120 and plasma reaction device 140 form divergence form magnetic field 160 at this opening part.Divergence form magnetic field 160 act as the effect of virtual jet pipe, can spray when ion and electron synchrotron.
Described pipeline transmitting device 110 comprises for the valve system 112 be connected with high pressure tank 200 pipeline storing described question response gas and the gas transport pipeline 114 be connected with this valve system 112, the axis of described gas transport pipeline 112 is through the center with described direct current (DC) bias device 130, and described gas transport pipeline 112 axis overlaps with the axis of described circular cylindrical cavity.
In one embodiment, with reference to figure 1, described magnetic field generation device 120 and plasma reaction device 140 are arranged at the relative both sides of described magnetic field generation device 120 respectively.In another embodiment, consult Fig. 2, described magnetic field generation device 120 is sheathed on outside described plasma reaction device 140.
Incorporated by reference to Fig. 1 and Fig. 2, magnetic field generation device 120 comprises the first annular magnet 122 and the second annular magnet 124 being hollow, the internal diameter of described first annular magnet 122 is less than the internal diameter of described second annular magnet 124, and described second annular magnet 124 is between described direct current (DC) bias device 130 and described first annular magnet 122.In the present embodiment, described first annular magnet 122 and described second annular magnet 124 are electromagnet or permanent magnet, to ensure to obtain being as the criterion for divergence form magnetic field in the magnetic field, exit of plasma reaction device 140, can be operated in the air pressure range of 1 millitorr to 100 holder.Magnetic field generation device 120 is that small one and large one ring electromagnet or permanent magnet are formed, and guarantees it is axisymmetric on the axis of plasma reaction device 140, and is diffused magnetic field structure after plasma reaction device 140 exports, and forms virtual jet pipe.
The DC bias power 134 that described direct current (DC) bias device 130 comprises bias voltage flange 132 and is electrically connected with this bias voltage flange 132, this DC bias power 134 current potential is adjustable.Described bias voltage flange 132 is made up, as copper of the saturating nonmagnetic electrically conductive material of fusing point higher than more than 1000 DEG C.
Further, the axis of gas transport pipeline 112 is through the center with bias voltage flange 132, and being fixedly connected as between the two is non-electric-connecting.In addition, the second annular magnet 124 is between bias voltage flange 132 and described first annular magnet 122.
Plasma reaction device 140 comprises the plasma reaction chamber 142 with described circular cylindrical cavity, the radio-frequency coil 144 in the outside being wound in described plasma reaction chamber 142, the radio frequency matching network 146 be electrically connected with this radio-frequency coil 144 and the radio-frequency power supply 148 of powering for this radio frequency matching network 146, the one end in described plasma reaction chamber 142 is fixedly connected with the bias voltage flange 132 in described direct current (DC) bias device 130, and the other end is opening.In the present embodiment, described plasma reaction chamber 142 is made for high temperature resistant erosion resistant medium, and the melting temperature of this medium is more than 700 DEG C.As, the pipeline that described plasma reaction chamber 142 is quartz ampoule, Pai Ruisi pipe, pottery are made or the pipeline that boron nitride is made.
Further, with reference to figure 2, the first annular magnet 122 of described magnetic field generation device 120 and the second annular magnet 124 are the outsides being sheathed on described plasma reaction device 140 plasma reaction chamber 142.
The electromagnetic signal of telecommunication of radio-frequency power supply 144 is transferred to plasma reaction chamber 142 through radio frequency matching network 146, and have maximum field value in the position being positioned at plasma reaction chamber 142, when gas to be sent (as: argon gas or oxygen) is by plasma reaction chambeies 142 such as pipeline transmitting device 110 arrival, this electric field can by gas breakdown, thus formation plasma, plasma can improve ionizing efficiency under the influence of a magnetic field, electronics simultaneously in plasma and ion expand in the virtual nozzle position of magnetic place forming, ion obtains accelerating to produce energetic ion, electrons outwards moves along the magnetic line of force, electronics and ion spray simultaneously and form quasi-neutrality line.When changing the current potential of rearmounted direct current (DC) bias, can change simultaneously and controlling the ion energy level in the ion beam current that obtains, thus meeting the demand of different process.Electromagnetic wave can make microwave also can make rf wave, difference is only that the mode of feed-in resonant cavity is different, the feed-in mode of microwave electromagnetic waves relies on coaxial antenna, resonance is formed in the plasma reaction chamber 142 of non-ferric, electric field superposition is amplified, thus gas breakdown produces plasma, and radio frequency electromagnetic relies on transport tape antenna, and be that the mode be wound around is coupling on plasma reaction chamber 142.
A kind of plasma generation method, the method performs based on above-mentioned plasma source system, and the method comprises:
Step one: question response gas is delivered to described plasma reaction device 140 by described pipeline transmitting device 110.(1) question response gas passes into plasma reaction chamber 142, and gas can be argon gas or oxygen or xenon or various plated film desired gas, or the working gas needed for space flight electric propulsion; Gas forms certain pressure in plasma reaction chamber 142, this pressure size by the openings of sizes of uninterrupted with discharge cavity passing into gas and the diameter of discharge cavity and length relevant.
Step 2: described magnetic field generation device 120 and plasma reaction device 140 power on, and form highfield in described circular cylindrical cavity by standing wave effect.The electromagnetic wave that radio-frequency power supply 148 sends is incorporated in plasma reaction chamber 142 through radio-frequency (RF) match 146 and radio-frequency coil (antenna) 144, and form highfield by standing wave effect, this electric field level is as the criterion with the working gas that can puncture middle introducing.
Step 3: question response gas is breakdown under the effect of this highfield, forms the plasma of quasi-neutrality;
Step 4: this plasma outwards sprays quasi-neutrality ion beam current under the effect of described divergence form magnetic field (virtual magnetic nozzle) 160.At virtual magnetic nozzle place, the Conversion of Energy of self is the kinetic energy of ion by electronics, thus obtains energetic ion line.The scope of ion energy can be 10eV-400eV.
Wherein, the described direct current (DC) bias device 130 that current potential is adjustable by described plasma and ion beam current electrical contact, thus regulates current potential to control the ion energy of ion beam current inside.
In the virtual magnetic nozzle that plasma is formed at divergent magnetic field, electron energy is converted into the energy of ion, from the ion beam current forming outwards ejection at a high speed; Plasma is connected with rearmounted direct current (DC) bias device 130, and the ion energy in the ion beam current obtained directly is subject to the control of direct current (DC) bias.
Relative to the method for designing of existing plasma source, the present invention uses electromagnetic electric field to produce plasma, belong to passive plasma, do not need metal electrode (not needing hollow cathode electron source to provide initiating electron), compared with existing ion source, simplify ion source system structure, improve stability and reliability and system useful life.
The axial component that present invention uses magnetic field carrys out the electronics in constraint plasma source, thus improve ionisation of gas efficiency, improve the utilization ratio of gas and overall ion beam generation efficiency, the magnetic field bit-type of dispersing forms virtual Rafael nozzle to control and accelerating charged particles, make electronics and ion to be ejected cavity thus produce the electric neutrality (no longer needing extra electron source averager to provide electron beam) maintaining system while beam-plasma, compared with existing ion thruster system, push system simplifies greatly, stability and the reliability of system can be improved, and system lifetim, thus make the ion energy level of plasma beam reach the requirement of coating process.
Compared with electrothermal microwave plasma source, the present invention uses low pressure discharge, and owing to there being the constraint of axial magnetic field, increase the active diffusion length of electronics, therefore ionisation of gas efficiency, utilization ratio, line ion energy are all greatly improved.
With Hall ion thruster unlike, what Hall ion thruster adopted is that complete radial magnetic field (also making magnetic hinder) carrys out filtering electronic, make electronics all the time in a closed angle drift channel, therefore electronics can not be ejected cavity, and the generation of beam-plasma of the present invention relies on the Lorentz effect between the radial component of the divergent magnetic field of virtual Rafael nozzle and charged particle to produce, but also there is the axial component of divergent magnetic field simultaneously, this axial component can ensure electronics axially plasma reaction containment portion motion, thus draw while realizing electronics and ion.
With existing hall ion source unlike, hall ion source needs to change anode current could change ion energy, this also can change obtained ion beam current size simultaneously, difficulty is brought to process adjustments, the present invention then only uses rearmounted direct current (DC) bias size to control the ion energy level in ion beam current, and can not affect the ion beam current size of output simultaneously.
Through Theoretical Physics model analysis, it is relevant with the radial component intensity in the cross section of plasma source system and magnetic field and electron temperature that plasma beam of the present invention produces.Distribution of Magnetic Field obtains through FEM (finite element) calculation, and plasma distribution calculates through model, and thrust obtains through theory calculate and experiment.Experimental result and theory analysis rule are coincide, and the present invention designs feasible, can be used for low pressure material process, cleaning, surface active, scientific satellite, the advanced industrial circle of propeller of moonlet and deep space probe etc.
The above embodiment only have expressed several execution mode of the present invention, and not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a plasma source system, it is characterized in that, comprise the pipeline transmitting device for carrying question response gas, the magnetic field generation device of annular, the direct current (DC) bias device of the saturating magnetic conductive that current potential is adjustable and there is the plasma reaction device of circular cylindrical cavity, the axis of described magnetic field generation device and plasma reaction device overlaps, highfield is formed in described circular cylindrical cavity, described pipeline transmitting device is through the center of described direct current (DC) bias device, and the axis of described pipeline transmitting device delivery outlet overlaps with the axis of described circular cylindrical cavity, described plasma reaction device is opening away from one end of described direct current (DC) bias device, and described magnetic field generation device and plasma reaction device form divergence form magnetic field at this opening part.
2. plasma source system according to claim 1, is characterized in that, the DC bias power that described direct current (DC) bias device comprises bias voltage flange and is electrically connected with this bias voltage flange, and this DC bias power current potential is adjustable.
3. plasma source system according to claim 2, is characterized in that, described bias voltage flange is made up of the saturating nonmagnetic electrically conductive material of fusing point higher than more than 1000 DEG C.
4. the plasma source system according to claim 1,2 or 3, it is characterized in that, described magnetic field generation device and plasma reaction device are arranged at the relative both sides of described magnetic field generation device respectively, or described magnetic field generation device is sheathed on outside described plasma reaction device.
5. plasma source system according to claim 4, it is characterized in that, described magnetic field generation device comprises the first annular magnet and the second annular magnet that are hollow, the internal diameter of described first annular magnet is less than the internal diameter of described second annular magnet, and described second annular magnet is between described direct current (DC) bias device and described first annular magnet.
6. plasma source system according to claim 5, is characterized in that, described first annular magnet and described second annular magnet are electromagnet or permanent magnet.
7. the plasma source system according to claim 1,2 or 3, it is characterized in that, described plasma reaction device comprises the plasma reaction chamber with described circular cylindrical cavity, the radio-frequency coil in the outside being wound in described plasma reaction chamber and the radio-frequency power supply of powering to this radio-frequency coil, the one end in described plasma reaction chamber is fixedly connected with described direct current (DC) bias device, and the other end is opening.
8. plasma source system according to claim 7, is characterized in that, described plasma reaction chamber is that high temperature resistant erosion resistant medium is made, and the melting temperature of this medium is more than 700 DEG C.
9. plasma source system according to claim 7, is characterized in that, the pipeline that described plasma reaction chamber is quartz ampoule, Pai Ruisi pipe, pottery are made or the pipeline that boron nitride is made.
10. plasma source system according to claim 5, it is characterized in that, described pipeline transmitting device comprise for store the tank connected valve system of high-pressure gas of described question response gas and the gas transport pipeline that is connected with this valve system, the axis of described gas transport pipeline is through the center with described direct current (DC) bias device, and described gas transport pipeline axis overlaps with the axis of described circular cylindrical cavity.
11. 1 kinds of plasma generation methods, is characterized in that, the method performs based on the plasma source system described in any one of claim 1 to 10, and the method comprises:
Question response gas is delivered to described plasma reaction device by described pipeline transmitting device;
Described magnetic field generation device and plasma reaction device power on, in described circular cylindrical cavity, form highfield by standing wave effect;
Question response gas is breakdown under the effect of this highfield, forms the plasma of quasi-neutrality;
This plasma outwards sprays quasi-neutrality ion beam current under the effect in described divergence form magnetic field;
Wherein, the described direct current (DC) bias device that current potential is adjustable by described plasma and ion beam current electrical contact, thus regulates current potential to control the ion energy of ion beam current inside.
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