CN115354289B - Ion source auxiliary deposition system, deposition method and vacuum coating equipment - Google Patents
Ion source auxiliary deposition system, deposition method and vacuum coating equipment Download PDFInfo
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- CN115354289B CN115354289B CN202211032636.5A CN202211032636A CN115354289B CN 115354289 B CN115354289 B CN 115354289B CN 202211032636 A CN202211032636 A CN 202211032636A CN 115354289 B CN115354289 B CN 115354289B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides an ion source auxiliary deposition system, a deposition method and vacuum coating equipment, and relates to the technical field of vacuum coating. The ion source auxiliary deposition system comprises a cathode, an anode, an air inlet pipe and an insulating shell; the cathode is provided with a target surface and is connected with a cathode power supply; the anode is arranged around the target surface, protrudes out of the target surface, and is connected with an anode power supply; the outlet of the air inlet pipe is positioned between the cathode and the anode; an insulating housing is disposed around the target surface to form an ionization chamber, and an anode is positioned within the ionization chamber. The ion source auxiliary deposition system can increase the ionization rate of the working gas, maintain discharge stability under the condition of small air flow, and reduce the frequency of collision between the plasma and the working gas atoms in the outward spraying process, so that the energy loss of the plasma is reduced, the movement direction of the plasma is not easy to change, and finally, enough plasmas are ensured to reach the substrate, the deposition effect is enhanced, and the film quality is improved.
Description
Technical Field
The application relates to the technical field of vacuum coating, in particular to an ion source auxiliary deposition system, a deposition method and vacuum coating equipment.
Background
The high-power pulse magnetron sputtering technology (HiPIMS) is a technology newly developed based on the traditional direct-current magnetron sputtering technology, and the sputtered plasma has the characteristics of high ionization rate, high density, high energy and the like, and is a physical vapor deposition technology with great prospect compared with the traditional direct-current magnetron sputtering deposition, wherein the substrate has lower temperature, stronger binding force of a thin substrate, denser film layer and better uniformity, and is widely applied to the fields of high-end optics, semiconductors, mechanical processing, military and the like.
The existing HiPIMS ion source has the advantages of high ionization rate before target, no large liquid drop of plasma, pureness and the like. However, due to the confinement of the magnetic field and the back-attraction effect on the plasma, the high-density plasma is mainly concentrated in the front region of the magnetron target, and needs to fly a certain distance to reach the surface of the substrate. With the increase of the flight distance, sputtered ions are continuously recombined with other electrons or collide with space gas, and finally the proportion of ions reaching the surface of the substrate is far lower than that before the target. When the high density, highly ionized plasma generated in front of the target reaches the substrate, its effect has been greatly compromised.
Disclosure of Invention
In order to solve the problems in the prior art, it is an object of the present application to provide an ion source assisted deposition system.
The application provides the following technical scheme:
an ion source auxiliary deposition system comprises a cathode, an anode, an air inlet pipe and an insulating shell;
the cathode is provided with a target surface capable of sputtering electrons, is connected with a cathode power supply, and is a pulse power supply;
the anode is arranged around the target surface, protrudes out of the target surface, and is connected with an anode power supply;
the air inlet pipe is provided with at least two air inlets, the air inlets are distributed around the target surface, and the outlet of the air inlet pipe is positioned between the cathode and the anode;
the insulating housing is disposed around the target surface to form an ionization chamber, and the anode is positioned within the ionization chamber.
As a further alternative to the ion source auxiliary deposition system, the ion source auxiliary deposition system further includes a first grid, the first grid is disposed in the ionization chamber and opposite to the target surface, the first grid is connected to the insulating housing, the first grid is connected to a first power source, the first power source is a pulse power source, and a voltage applied to the first grid by the first power source is asynchronous to a voltage coupling applied to the cathode by the cathode power source.
As a further alternative to the ion source assisted deposition system, the voltage applied to the first grid by the first power supply is the same polarity as the voltage applied to the cathode by the cathode power supply.
As a further alternative to the ion source auxiliary deposition system, the ion source auxiliary deposition system further includes a second grid, where the second grid is disposed in the ionization chamber and is located on a side of the first grid facing away from the target surface, the second grid is connected to the insulating housing, and is connected to a second power supply, where the second power supply is a pulse power supply, and a voltage applied to the second grid by the second power supply is asynchronous with a voltage coupling applied to the first grid by the first power supply.
As a further alternative to the ion source assisted deposition system, the voltage applied to the first grid by the first power supply and the voltage applied to the second grid by the second power supply are all the same polarity as the voltage applied to the cathode by the cathode power supply.
As a further alternative to the ion source assisted deposition system, the voltage applied to the second grid by the second power supply is of opposite polarity to the voltage applied to the first grid by the first power supply.
As a further alternative to the ion source assisted deposition system, the anode is embedded in an inner wall of the insulating housing.
As a further alternative to the ion source assisted deposition system, the ion source assisted deposition system further comprises a spiral coil, the target surface being located on a side of the cathode facing away from the spiral coil.
It is another object of the present application to provide an ion source assisted deposition method.
The application provides the following technical scheme:
an ion source auxiliary deposition method is applied to the ion source auxiliary deposition system, and the ion source auxiliary deposition method comprises the following steps:
installing the ion source auxiliary deposition system in a vacuum chamber, and vacuumizing the vacuum chamber to 1 x 10 -2 Pa-1*10 -5 Pa；
Working gas is conveyed into the ionization chamber through the air inlet pipe, so that the air pressure in the vacuum chamber reaches 5 x 10 -1 Pa；
Turning on the anode power supply and the cathode power supply;
regulating the voltage of the cathode to start the cathode, and then reducing the flow of the working gas to ensure the air pressure in the vacuum chamberDown to 1 x 10 -1 Pa。
It is still another object of the present application to provide a vacuum coating apparatus.
The application provides the following technical scheme:
a vacuum coating device comprises the ion source auxiliary deposition system.
The embodiment of the application has the following beneficial effects:
when the cathode power supply and the anode power supply are turned on, electrons are sputtered on the target surface of the cathode, and the electrons move to the anode. The outlet of the air inlet pipe is arranged between the cathode and the anode, the working gas flowing out from the outlet of the air inlet pipe is positioned on the moving path of electrons and is immediately contacted with the electrons, so that the ionization rate of the working gas can be increased, and the discharge stability is maintained under the condition of small air flow. In addition, the insulating shell surrounds the target surface to form an ionization chamber, so that the diffusion direction and the diffusion range of the working gas can be limited, the working gas is concentrated in the area in front of the cathode, the plasma density near the target surface is improved, and the anode is arranged in the ionization chamber, so that the utilization rate of the anode can be maximally improved, the working gas near the target surface is ionized, the stability of discharge is kept, and the ionization under the condition of small air flow is ensured to generate enough plasma. At this time, the number of non-ionized working gas atoms in the ionization chamber is less, so that the collision frequency of the plasma and the working gas atoms in the outward spraying process can be reduced, the energy loss of the plasma is reduced, the movement direction of the plasma is not easy to change, and finally, enough plasmas are ensured to reach the substrate, the deposition effect is enhanced, and the film quality is improved.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram showing the overall structure of an ion source assisted deposition system according to embodiment 1 of the present application;
FIG. 2 is a flow chart showing the steps of an ion source assisted deposition method according to embodiment 1 of the present application;
FIG. 3 is a schematic diagram showing the overall structure of an ion source assisted deposition system according to embodiment 2 of the present application;
FIG. 4 is a schematic diagram showing the overall structure of an ion source assisted deposition system according to embodiment 3 of the present application;
fig. 5 is a schematic diagram showing the overall structure of an ion source assisted deposition system according to embodiment 4 of the present application.
Description of main reference numerals:
10-cathode; 11-cathode power supply; 20-anode; 30-an air inlet pipe; 40-insulating housing; 50-a first grid; 51-a first power supply; 60-a second grid; 61-a second power supply; 70-helical coil; 71-stainless steel skeleton; 80-substrate.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the templates herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Example 1
Referring to fig. 1, the present embodiment provides an ion source assisted deposition system, and in particular, an ion source assisted deposition system capable of improving ionization rate, discharge stability and film quality, which is applied to a vacuum coating apparatus for generating plasma to deposit on a surface of a substrate 80 and coating the substrate 80.
The ion source assisted deposition system consists of a cathode 10, an anode 20, an air inlet tube 30, an insulating housing 40 and a first grid 50. Wherein the cathode 10 is matched with the anode 20 to ionize the working gas conveyed by the air inlet pipe 30. The insulating housing 40 and the first grid 50 serve as auxiliary elements to enhance the deposition effect.
Specifically, the cathode 10 is mounted on a flange (not shown) made of an insulating material. The cathode 10 has a target surface that can sputter electrons, and the target surface is disposed facing the substrate 80. The cathode 10 is connected to a cathode power supply 11. The cathode power supply 11 is a high-power pulse power supply, the output voltage frequency is 10HZ-2000Hz, and the pulse width is 10-500 mu s.
In this embodiment, the cathode 10 is a planar magnetron target, the target surface is planar, and the normal to the target surface is directed perpendicularly to the substrate 80.
Specifically, the anode 20 is disposed around the target surface and protrudes from the target surface, and the anode 20 is connected to a power source (not shown) of the anode 20.
The anode 20 surrounds the target surface, namely, the anode 20 extends along the edge of the target surface to form a cylindrical structure, and the axis of the anode 20 is parallel to the normal line of the target surface. The cross section of the anode 20 (i.e., a cross section perpendicular to the axis thereof) may be any shape including circular and square, and the cross section of the anode 20 may be the same or different throughout the axis thereof, and may have a tapered cylindrical shape.
In this embodiment, the anode 20 has a cylindrical structure, and its generatrix is parallel to the axis.
Protruding the anode 20 from the target surface means that the distance between the end of the anode 20 facing the substrate 80 and the substrate 80 is smaller than the distance between the target surface and the substrate 80 in the normal direction of the target surface.
The anode 20 power source may be a dc power source, a pulsed dc power source, or a radio frequency power source to apply different voltage signals across the anode 20 to optimize ion diffusion and enhance the deposited ion flux. Wherein the voltage applied to the anode 20 by the anode 20 power supply is 10V-600V.
When the anode 20 power supply and the cathode power supply 11 are turned on at the same time, electrons are sputtered on the target surface of the cathode 10, and the electrons move toward the anode 20.
Further, the anode 20 is made of various metals including copper, so long as it is ensured that the anode does not melt or deform under the continuous high-density electron bombardment. In addition, the anode 20 can be externally connected with a water cooling device to achieve the cooling effect.
Specifically, there are at least two air inlet pipes 30, and the air inlet pipes 30 are uniformly distributed around the target surface, and the outlet of the air inlet pipe 30 is located between the cathode 10 and the anode 20.
In the present embodiment, the number of the air inlet pipes 30 is two, and the two air inlet pipes 30 are symmetrically disposed at both sides of the cathode 10.
The air inlet pipe 30 is parallel to the normal line of the target surface, the distance between the air inlet pipe 30 and the target surface is 1mm-10mm, and the distance between the anode 20 and the air inlet pipe 30 is 1mm-20mm. The intake pipe 30 may have a floating potential or the same potential as the chamber.
When in use, the air inlet pipe 30 continuously conveys working gas, the working gas flowing out from the outlet of the air inlet pipe 30 is just positioned on the moving path of electrons, and ions containing film elements are obtained after ionization.
The outlet of the gas inlet pipe 30 is arranged between the cathode 10 and the anode 20, and the working gas is not diffused to the periphery after flowing out from the outlet of the gas inlet pipe 30, namely, is in contact with electrons, so that the ionization rate of the working gas can be increased, and the discharge stability can be maintained under the condition of small gas flow. On the basis, the gas flow required for maintaining the discharge of the cathode 10 can be reduced, so that the number of non-ionized working gas atoms is reduced, the collision between the plasma and the working gas atoms in the space transportation process is reduced, and the reduction of the ionization rate and the change of the path of ions in the space transportation process are avoided to a certain extent.
Further, two air inlet pipes 30 are connected to the same air path. In the case of a plurality of working gases, the working gases are mixed uniformly and then output through the two intake pipes 30.
Specifically, an insulating housing 40 is disposed around the target surface to form an ionization chamber, and the anode 20, cathode 10, and air inlet tube 30 are all located within the ionization chamber.
In addition, one end of the insulating housing 40 is fixedly connected to the flange, and both the working gas introduced into the ionization chamber and the plasma generated by the ionization of the working gas can flow only to the other end of the insulating housing 40.
In this embodiment, the insulating housing 40 is configured in a horn shape with a small end connected to the flange and a large end facing the substrate 80. The included angle between the bus bar of the insulating housing 40 and the target surface is more than 90 degrees and not more than 150 degrees, and the distance between the insulating housing 40 and the target surface is 3-50mm.
The insulating housing 40 is provided to limit the diffusion direction and diffusion range of the working gas, concentrate the working gas in the region in front of the cathode 10, increase the plasma density near the target surface, and reduce the gas flow required for maintaining the discharge of the cathode 10, so that the number of non-ionized working gas atoms is reduced, thereby reducing the collision between the plasma and the working gas atoms in the space transportation process, and avoiding the reduction of the ionization rate and the path change of the ions in the space transportation process to a certain extent.
Meanwhile, the anode 20 is arranged in the ionization chamber, so that the utilization rate of the anode 20 can be maximally improved, working gas near the target surface is ionized, and the dual effects of stable discharge and improvement of the ionization rate of the film element are achieved.
Specifically, a first grid 50 is disposed within the ionization chamber, the first grid 50 being parallel and opposite to the target surface. The first grid 50 is fixedly connected to the inner wall of the insulating housing 40 facing one end of the substrate 80, and the first grid 50 is connected to a first power source 51.
The first power source 51 is a pulse power source, and the voltage applied to the first grid 50 by the first power source 51 is coupled asynchronously to the voltage applied to the cathode 10 by the cathode power source 11, by a pulse synchronization technique. That is, the frequency and pulse width of the output voltage of the first power supply 51 are the same as those of the output voltage of the cathode power supply 11, respectively, and the phase of the output voltage of the first power supply 51 is 0-1000 μs (excluding 0 μs) behind the phase of the output voltage of the cathode power supply 11.
The voltage applied to the first grid 50 by the first power supply 51 is the same polarity as the voltage applied to the cathode 10 by the cathode power supply 11, and is negative.
The first grid 50 is capable of drawing ions out of the region near the target surface. By adjusting the voltage value of the first grid 50, the plasma energy can be adjusted. By matching with the application of the bias voltage of the substrate 80, the film quality can be improved, and the linearity of the plasma space transportation can be ensured.
Referring to fig. 2, the embodiment also provides an ion source assisted deposition method, which is applied to the ion source assisted deposition system, and includes the following steps:
s1, installing an ion source auxiliary deposition system in a vacuum chamber, and vacuumizing the vacuum chamber to 1 x 10 -2 Pa-1*10 - 5 Pa。
S2, conveying working gas into the ionization chamber through the air inlet pipe 30 to enable the air pressure in the vacuum chamber to reach 5 x 10 -1 Pa。
S3, turning on the anode 20 power supply, the cathode power supply 11, and the first power supply 51.
Specifically, the anode 20 is turned on first, and the voltage applied to the anode 20 by the anode 20 power is 10V-600V. Then, the cathode power supply 11 and the first power supply 51 are turned on, wherein the frequency of the output voltage of the cathode power supply 11 is 10HZ-2000Hz, the pulse width is 10-500 mu s, the frequency of the output voltage of the first power supply 51 is the same as the frequency of the output voltage of the cathode power supply 11, the pulse width of the output voltage of the first power supply 51 is the same as the pulse width of the output voltage of the cathode power supply 11, and the phase of the output voltage of the first power supply 51 is 0-1000 mu s (excluding 0 mu s) behind the phase of the output voltage of the cathode power supply 11.
S4, adjusting the voltage value of the cathode 10 to enable the cathode 10 to start, then reducing the flow of the working gas to enable the air pressure in the vacuum chamber to be reduced to 1 x 10 -1 Pa。
In a word, the ion source auxiliary deposition system and the ion source auxiliary deposition method are adopted for coating, so that the ionization rate of plasmas can be improved, the space plasma density can be increased, and the quality of a film layer can be improved. Meanwhile, the outlet of the air inlet pipe 30 is located between the anode 20 and the cathode 10, so that a large amount of ionized gas can be utilized to reduce the air pressure required by the stable operation of the cathode 10, specifically to 1 x 10 - 1 Pa, the working gas can be reduced from scattering before the substrate 80, and plasma energy reduction, ionization rate reduction and flight direction change caused by collision in the process of scattering the plasma to the substrate 80 can be avoided to a certain extent. In addition, voltage adjustment of the first grid 50 can regulate the uniformity of the plasma energy and the spray direction.
The embodiment also provides vacuum coating equipment, which comprises the ion source auxiliary deposition system.
Example 2
Referring to fig. 3, the difference from embodiment 1 is that in the present embodiment, the anode 20 is embedded on the inner wall of the insulating housing 40 and is located between the target surface and the first grid 50. Further, the anode 20 may have a mesh-like or cylindrical structure with a width of 1mm to 5mm.
By the arrangement, the ionization uniformity of the working gas in the area near the target surface can be increased, the stability of target surface discharge is further increased, the quantity of the working gas scattered to the area near the target surface is further reduced, the collision of plasma in the injection process is reduced, and the quality of a film layer is further improved.
Example 3
Referring to fig. 4, the difference from embodiment 1 is that the ion source assisted deposition system provided in this embodiment further includes a second grid 60. The second grid 60 is disposed within the ionization chamber, the second grid 60 being parallel and opposite the target surface. The second grid 60 is fixedly connected to the inner wall of the insulating housing 40 facing the end of the substrate 80, and the second grid 60 is connected to a second power source 61.
Correspondingly, the first grid 50 is located between the second grid 60 and the target surface and is fixedly connected to the inner wall of the middle part of the insulating housing 40.
The second power source 61 is a pulsed power source and the voltage applied by the second power source 61 to the second grid 60 is coupled asynchronously to the voltage applied by the first power source 51 to the first grid 50. That is, the frequency of the output voltage of the second power supply 61 is the same as the frequency of the output voltage of the first power supply 51, the pulse width of the output voltage of the second power supply 61 is the same as the pulse width of the output voltage of the first power supply 51, and the phase of the output voltage of the second power supply 61 is the same as the phase of the output voltage of the first power supply 51.
In a specific implementation of this embodiment, the voltage applied to the first grid 50 by the first power supply 51 and the voltage applied to the second grid 60 by the second power supply 61 are both negative and have the same polarity as the voltage applied to the cathode 10 by the cathode power supply 11. Further, the phase of the output voltage of the second power supply 61 is behind the phase of the output voltage of the first power supply 51 by 0 to 1000 μs (excluding 0 μs).
When in use, the cathode power supply 11 outputs voltage to the cathode 10 to start the cathode 10, and the working gas is ionized to generate ions. Then, a voltage is output from the first power supply 51 to the first grid 50, and ions are pulled out of the region near the target surface, so that the ions move toward the substrate 80. As ions pass through the first grid 50, the voltage output by the first power supply 51 to the first grid 50 becomes zero, and the voltage output by the second power supply 61 to the second grid 60 continues to pull ions toward the substrate 80. As the ions pass through the second grid 60, the voltage output from the second power source 61 to the second grid 60 becomes zero.
The first grid 50 and the second grid 60 are matched together, so that the movement direction and energy of the plasma can be further regulated and controlled, and the film plating of the workpiece on the inner wall of the deep hole or the pipeline structure is more beneficial.
In another specific implementation of this embodiment, the voltage applied to the first grid 50 by the first power supply 51 is opposite to the voltage applied to the second grid 60 by the second power supply 61, and the phase of the output voltage of the first power supply 51 is 0-1000 μs (excluding 0 μs) behind the phase of the output voltage of the second power supply 61.
When in use, the cathode power supply 11 outputs voltage to the cathode 10, so that the cathode 10 is started, electrons are sputtered on the target surface, and the working gas is ionized to generate ions. Then, the second power source 61 outputs a positive voltage to the second grid 60, so that the second grid 60 is started, and electrons with small volume and light weight are rapidly pulled to pass through the first grid 50, and the voltage output by the second power source 61 to the second grid 60 becomes zero. Then, a negative voltage is output to the first grid 50 by the first power supply 51, so that the first grid 50 is started, and ions are pulled out of the area near the target surface, so that the ions move toward the substrate 80. As ions pass through the first grid 50, the voltage output from the first power supply 51 to the first grid 50 becomes zero. Since electrons exist between the first grid 50 and the second grid 60, ions passing through the first grid 50 can be kept in an ionized state, and the working gas entering between the first grid 50 and the second grid 60 can be further ionized. Thereafter, the second power supply 61 outputs a negative voltage to the second grid 60, continuing to pull ions toward the substrate 80. The first power source 51 outputs a positive voltage to the first grid 50, and the ions are driven toward the substrate 80 by repulsive force.
The first grid 50 applies a repulsive force to the ions and the second grid 60 applies a attractive force to the ions, which can more effectively transport the ions toward the substrate 80.
Example 4
Referring to fig. 5, the difference from embodiment 1 is that the ion source assisted deposition system further includes a spiral coil 70, and the spiral coil 70 is located on a side of the cathode 10 facing away from the substrate 80. At this time, the target surface is located on the side of the cathode 10 facing away from the spiral coil 70.
Specifically, the spiral coil 70 has a wire diameter of 0.3-3mm, a winding density of 10-200 turns/mm, and a current flow of 0.5-10A. The spiral coil 70 is supported by a conical stainless steel frame 71, and the stainless steel frame 71 is fixedly connected with the insulating housing 40.
By generating a magnetic field through the spiral coil 70, the generated plasma can be more focused, thereby improving the linearity of the plasma transportation.
Any particular values in all examples shown and described herein are to be construed as merely illustrative and not a limitation, and thus other examples of exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the present application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application.
Claims (9)
1. An ion source auxiliary deposition system is characterized by comprising a cathode, an anode, an air inlet pipe, an insulating shell and a first grid;
the cathode is provided with a target surface capable of sputtering electrons, is connected with a cathode power supply, and is a pulse power supply;
the anode is arranged around the target surface, protrudes out of the target surface, and is connected with an anode power supply;
the air inlet pipe is provided with at least two air inlets, the air inlets are distributed around the target surface, and the outlet of the air inlet pipe is positioned between the cathode and the anode;
the insulating housing is arranged around the target surface to form an ionization chamber, and the anode is positioned in the ionization chamber;
the first grid is arranged in the ionization chamber and opposite to the target surface, the first grid is connected with the insulating shell, the first grid is connected with a first power supply, the first power supply is a pulse power supply, and the voltage applied to the first grid by the first power supply is asynchronous with the voltage coupling applied to the cathode by the cathode power supply.
2. The ion source assisted deposition system of claim 1, wherein a voltage applied to the first grid by the first power supply is the same polarity as a voltage applied to the cathode by the cathode power supply.
3. The ion source assisted deposition system of claim 1, further comprising a second grid disposed within the ionization chamber and on a side of the first grid facing away from the target surface, the second grid being coupled to the insulating housing, the second grid being coupled to a second power source, the second power source being a pulsed power source, a voltage applied to the second grid by the second power source being asynchronous to a voltage coupling applied to the first grid by the first power source.
4. The ion source assisted deposition system of claim 3, wherein the voltage applied to the first grid by the first power supply and the voltage applied to the second grid by the second power supply are each of the same polarity as the voltage applied to the cathode by the cathode power supply.
5. The ion source assisted deposition system of claim 3, wherein a voltage applied to the second grid by the second power supply is of opposite polarity to a voltage applied to the first grid by the first power supply.
6. The ion source assisted deposition system of any of claims 1-5, wherein the anode is embedded in an inner wall of the insulating housing.
7. The ion source assisted deposition system of claim 1, further comprising a helical coil, the target surface being on a side of the cathode facing away from the helical coil.
8. An ion source assisted deposition method, applied to an ion source assisted deposition system according to any one of claims 1 to 7, comprising:
installing the ion source auxiliary deposition system in a vacuum chamber, and vacuumizing the vacuum chamber to 1 x 10 -2 Pa-1*10 - 5 Pa；
Working gas is conveyed into the ionization chamber through the air inlet pipe, so that the air pressure in the vacuum chamber reaches 5 x 10 -1 Pa；
Turning on the anode power supply and the cathode power supply;
regulating the voltage of the cathode to start the cathode, and then reducing the flow of the working gas to reduce the air pressure in the vacuum chamber to 1 x 10 -1 Pa。
9. A vacuum coating apparatus comprising an ion source assisted deposition system according to any one of claims 1 to 7.
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