CN114032519A - Electromagnetic field coupling bipolar pulse magnetron sputtering system and method for improving flow and energy - Google Patents
Electromagnetic field coupling bipolar pulse magnetron sputtering system and method for improving flow and energy Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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Abstract
An electromagnetic field coupling bipolar pulse magnetron sputtering system and a method for improving flow and energy, the system comprises a bipolar pulse magnetron sputtering power supply and a sputtering target, and at least comprises one of an auxiliary anode and an external magnetic field unit, wherein the pulse output end of the bipolar pulse magnetron sputtering power supply is connected with the sputtering target, and when the auxiliary anode is included, the auxiliary anode is arranged in front of the sputtering target; when the external magnetic field unit is included, the external magnetic field unit can be arranged on the inner side or the outer side of the auxiliary anode; driving ions generated by negative pulses to fly away from the area near the surface of the sputtering target by adopting a bipolar pulse magnetron discharge mode; optimizing the diffusion of the deposited ions by using an electric field generated by the auxiliary anode; the transmission of electrons is optimized by the configuration of an external magnetic field, the mobility of plasma diffusion is enhanced, and the flow of deposited ions is increased. The invention is economical and practical, can improve the magnetron sputtering discharge deposition rate and improve the performance of the film.
Description
Technical Field
The invention relates to a magnetron sputtering device and a magnetron sputtering method.
Background
Since the advent of magnetron sputtering, research on magnetron sputtering has been increasing year by year, and is highly concerned by scholars at home and abroad. The technology is widely applied to the field of film preparation with the advantages of low-temperature deposition, smooth surface, no particle defect and the like, but most of sputtered metal in the traditional magnetron sputtering treatment technology exists in an atomic state, the ionization rate of the metal is low (1 percent), so that the controllability is poor, and the quality and the performance of the deposited film are difficult to optimize. Aiming at the problem, foreign scholars develop a high-power pulse magnetron sputtering technology, the peak power in the discharge process can exceed 2 orders of magnitude of the common magnetron sputtering, 10kw/cm2 is achieved, the electron density around the target can reach 1019/m3, and meanwhile, the ionization rate of the sputtering material can reach more than 90 percent, so that the technology draws great attention in the sputtering field and expands various applications. Various pure metal films, nitride ceramic superhard films, oxide ceramic films, diamond-like carbon films and the like prepared by high-power pulse magnetron sputtering are researched greatly to form respective matrix-coating-microstructure action systems. However, although the high power pulse magnetron sputtering has a significant advantage in increasing the ionization rate of deposited particles, the high negative voltage can cause the sputtered target material atoms to be ionized into ions and then attracted back by the negative voltage of the target, so that the deposition rate of the high power pulse magnetron sputtering is significantly lower than that of the conventional dc magnetron sputtering, which is also a barrier to the industrial popularization of the technology itself. In addition, the energy of ions in high-power pulse magnetron sputtering discharge is 1-5 eV, so that the requirement of people cannot be met when the high-power pulse magnetron sputtering discharge is applied to an insulating substrate.
Disclosure of Invention
One of the objectives of the present invention is to provide an economical and practical electromagnetic field coupling bipolar pulse magnetron sputtering system, which can effectively enhance sputtering discharge and improve sputtering efficiency, ionization ratio of target particles, and energy and flow rate of deposited ions.
The invention also aims to provide a method for improving the energy and the flow of the deposited ions of the bipolar pulse magnetron sputtering system.
In order to achieve the above object, the present invention provides an electromagnetic field coupled bipolar pulse magnetron sputtering system, which comprises a bipolar pulse magnetron sputtering power supply and a sputtering target, and at least comprises one of an auxiliary anode and an external magnetic field unit, that is, only the auxiliary anode or only the external magnetic field unit, or both, wherein ions generated by a negative pulse are driven to fly away from a region near the surface of the sputtering target by using a bipolar pulse magnetron discharge form, the diffusion of deposited ions is optimized by using an electric field generated by the auxiliary anode, the transmission of electrons is optimized by using an external magnetic field configuration, the mobility of plasma diffusion is enhanced, and further the flow rate of deposited ions is increased.
The auxiliary anode can be a grid, a barrel or a horn conductor electrode with different shapes, materials and sizes.
Preferably, the auxiliary anode can resist the temperature of 0-1000 ℃.
Preferably, the auxiliary anode is connected with an auxiliary power supply to supply power to the auxiliary anode.
Preferably, the external magnetic field component can be an electromagnetic coil or a permanent magnet, and the magnetic field generated by the external magnetic field component is basically vertical to the surface of the target in the auxiliary anode.
As a preferred mode, the external magnetic field component can resist the temperature of 0-1000 ℃.
Preferably, the external magnetic field member is attached within a range of-100 to +200mm from the sputtering target.
In another aspect, the present invention provides a method for increasing the flux and energy of bipolar pulse magnetron sputtering discharge deposition ions, comprising: the method comprises the following steps: selecting an auxiliary anode with proper size, shape and material and an external magnetic field component with proper size and performance, and installing the auxiliary anode and the external magnetic field component in front of a cathode target; step two: pre-vacuumizing the discharging system is completed; step three: connecting the positive and negative pulse output ends of the bipolar pulse magnetron sputtering power supply to a cathode target; step four: a direct current power supply, a controllable pulse power supply or a controllable radio frequency power supply is selected to be connected with the auxiliary anode to provide voltage for the auxiliary anode; step five: working gas is introduced, the voltage waveform and the space position of the auxiliary anode, even the shape of the auxiliary anode, the position of an external magnetic field component, the magnetic field intensity and the like are adjusted, and the maximum promotion of the flow of the deposited ions is realized.
The auxiliary anode can be a grid, a barrel or a horn conductor electrode with different shapes, materials and sizes.
Preferably, the auxiliary anode is resistant to the temperature of 0-1000 ℃.
Preferably, the auxiliary anode should be connected to an auxiliary power supply to supply power to the auxiliary anode.
Preferably, the external magnetic field component can adopt an electromagnetic coil or a permanent magnet, and the magnetic field generated by the external magnetic field component is perpendicular to the surface of the target in the auxiliary anode.
As a preferable mode, the external magnetic field component can resist the temperature of 0-1000 ℃, and when the electromagnetic coil is selected, the current passing range of the coil is 0-500A.
Preferably, the external magnetic field member is attached within a range of-100 to +200mm from the sputtering target.
Preferably, the auxiliary anode power supply can adopt a direct current power supply, a pulse direct current power supply or a radio frequency power supply, so as to apply different voltage signals on the auxiliary anode, optimize ion diffusion and enhance the flow of deposited ions.
Compared with the prior art, the invention adopts an electromagnetic field coupling mode, the auxiliary anode and the external magnetic field component are arranged in front of the sputtering target, the auxiliary anode generates an electric field to push ions to move towards the central area of the target in the discharging process, and the magnetic field generated by the magnetic field component is utilized to enhance the fluidity of plasma diffusion. By controlling the movement, diffusion and collision reaction of charge particles in the plasma, the ionization proportion of gas atoms and target material atoms generated by sputtering is increased, so that the sputtering yield is improved, and the flow and energy of deposited ions are increased. The operation method is economical and practical, improves the magnetron sputtering discharge deposition rate, and improves the performance of the film.
Drawings
FIG. 1 is an embodiment of an electromagnetic field coupled bipolar pulse magnetron sputtering system.
FIG. 2 is a graph showing the variation of the negative pulse peak target current by adjusting the coil current (i.e., adjusting the magnetic field strength) when the magnetron parameters are set to-520V negative pulse target voltage, +80V positive pulse target voltage, 50 μ s negative pulse duration, 200 μ s positive pulse duration, and 0.8Pa argon and titanium target discharge.
FIG. 3 is a graph showing the variation of the peak target current of the positive pulse by adjusting the coil current (i.e., adjusting the magnetic field strength) when the magnetron parameters are set to-520V negative pulse target voltage, +80V positive pulse target voltage, + 50 μ s negative pulse duration, 200 μ s positive pulse duration, and 0.8Pa argon and titanium target discharge.
FIG. 4 is a graph showing the variation of electron density at a position 65mm from the center of a target by adjusting the coil current (i.e., adjusting the magnetic field strength) when setting magnetron parameters of-520V negative pulse target voltage, +80V positive pulse target voltage, 50 μ s negative pulse duration, 200 μ s positive pulse duration, and 0.8Pa argon gas for titanium target discharge.
Detailed Description
Hereinafter, embodiments of an electromagnetic field coupled bipolar pulse magnetron sputtering system and a method of increasing a flow rate and an energy according to the present invention will be described with reference to the accompanying drawings.
The embodiments described herein are specific embodiments of the present invention, are intended to be illustrative and exemplary in nature, and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include technical solutions which employ any obvious replacement or modification of the embodiments described herein.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships.
FIG. 1 is an embodiment of an electromagnetically coupled bipolar pulsed magnetron sputtering system where an electromagnetic coil is selected as an external magnetic field accessory, comprising: an air inlet 1; a vacuum chamber 2; a workpiece 3; a work rest 4; an air outlet 5; an auxiliary anode 6; an electromagnetic coil 7; a magnetron sputtering target 8; a bipolar pulse magnetron sputtering power supply 9; an auxiliary anode power supply 10; the solenoid coil supplies power to the power supply 11. The selected auxiliary anode power supply 10 and the electromagnetic coil power supply 11 are both direct current voltage sources.
In this embodiment, the auxiliary anode power supply 10 and the solenoid coil power supply 11 are both dc voltage sources. The selected power source is only used as an example, and in practical application, the auxiliary anode power source 10 and the electromagnetic coil power source 11 can be a controllable pulse power source, a controllable radio frequency power source and the like.
In this embodiment, a dc voltage is first applied to the auxiliary anode 6, which creates an electric field that repels ions toward the top of the target center, a process that increases the energy and flux of the deposited ions; secondly, the electromagnetic coil 7 is used for generating a magnetic field vertical to the surface of the target in the auxiliary anode 6, so that the mobility of plasma diffusing from the surface of the target to the downstream is enhanced, and the aim of enhancing the energy and the flow of the deposited ions is fulfilled.
The bipolar pulse magnetron sputtering system can adopt conductors with different shapes, materials, grids with proper sizes, tubbiness, trumpets and the like as the auxiliary anode.
According to the bipolar pulse magnetron sputtering system, the auxiliary anode is suitable for resisting the temperature of 0-1000 ℃, and the range of the passing current is preferably 0-100A.
In the bipolar pulse magnetron sputtering system of the present invention, the auxiliary anode is preferably installed in a range of 1 to 100mm in front of the sputtering target.
According to the bipolar pulse magnetron sputtering system, the electromagnetic coil can resist the temperature of 0-1000 ℃, and the passing current range is preferably 0-500A.
According to the bipolar pulse magnetron sputtering system, the electromagnetic coil can be wound on the outer side of the auxiliary anode for installation.
The bipolar pulse magnetron sputtering system of the present invention is preferably such that the electromagnetic coil is mounted within a range of-100 to +200mm from the sputtering target, wherein the range of-100 to +200mm is based on the target surface, and the external magnetic field member can be mounted from a position 0 to 200mm in front of the sputtering target, i.e., within a range of 0 to +200mm, or from a position 0 to 100mm behind the sputtering target, i.e., within a range of 0 to-100 mm.
The following illustrates embodiments of the present invention for increasing the flux and energy of the deposited ions:
the method comprises the following steps: an auxiliary anode with proper size, shape and material and an external magnetic field component with proper size and performance are selected and arranged in front of the cathode target.
Step two: the pre-evacuation of the discharge system is completed.
Step three: and connecting the positive and negative pulse output ends of the bipolar pulse magnetron sputtering power supply to the cathode target.
Step four: a direct current power supply, a controllable pulse power supply or a controllable radio frequency power supply is selected to be connected with the auxiliary anode to provide voltage for the auxiliary anode.
Step five: working gas is introduced, the voltage waveform and the space position of the auxiliary anode, even the shape of the auxiliary anode, the position of an external magnetic field component, the magnetic field intensity and the like are adjusted, and the maximum promotion of the flow of the deposited ions is realized.
In the first step of the invention, the auxiliary anode can adopt conductors of grids, barrels and the like with different shapes, materials and proper sizes.
In the first step of the invention, the auxiliary anode is preferably resistant to temperature of 0-1000 ℃, and the range of the passing current is preferably 0-100A.
In the first step of the present invention, the auxiliary anode should be installed in front of the sputtering target within a range of 1-100 mm.
In the first step of the invention, the electromagnetic coil can resist the temperature of 0-1000 ℃, and the current range of 0-500A is suitable.
In the first step of the invention, the electromagnetic coil can be wound on the outer side of the auxiliary anode for installation.
In the first step of the present invention, the electromagnetic coil is preferably attached to the sputtering target in a range of-100 to +200mm, the range of-100 to +200mm is defined with reference to the target surface, and the external magnetic field member may be attached from a position 0 to 200mm in front of the sputtering target, i.e., from a position 0 to +200mm, or from a position 0 to 100mm behind the sputtering target, i.e., from a position 0 to-100 mm.
FIG. 2 shows that a barrel-shaped auxiliary anode and an electromagnetic coil are arranged in front of a sputtering target, the auxiliary anode and the electromagnetic coil are both connected to a direct current power supply, and the value of the negative pulse peak target current is recorded by adjusting the coil current. The auxiliary anode material is made of stainless steel, the size of the auxiliary anode material is 60mm in inner diameter, 64mm in outer diameter and 50mm in length, and the auxiliary anode material is installed 15mm away from the surface of the sputtering target. The electromagnetic coil is made of high-temperature conducting wires, and has 10 layers, 30 turns in each layer and 300 turns in total. The cathode target is a titanium target with the diameter of 50mm and the thickness of 5 mm. The magnetic control parameters are as follows: negative pulse duration 50 mus, target voltage-520V, positive pulse duration 200 mus, target voltage + 80V. The working gas is argon, and the pressure is 0.8 Pa. The auxiliary anode voltage was set to + 80V.
FIG. 3 shows that a barrel-shaped auxiliary anode and a solenoid coil are arranged in front of a sputtering target, the auxiliary anode and the solenoid coil are both connected to a direct current power supply, and the value of the positive pulse peak target current is recorded by adjusting the coil current. The auxiliary anode material is made of stainless steel, the size of the auxiliary anode material is 60mm in inner diameter, 64mm in outer diameter and 50mm in length, and the auxiliary anode material is installed 15mm away from the surface of the sputtering target. The electromagnetic coil is made of high-temperature conducting wires, and has 10 layers, 30 turns in each layer and 300 turns in total. The cathode target is a titanium target with the diameter of 50mm and the thickness of 5 mm. The magnetic control parameters are as follows: negative pulse duration 50 mus, target voltage-520V, positive pulse duration 200 mus, target voltage + 80V. The working gas is argon, and the pressure is 0.8 Pa. The auxiliary anode voltage was set to + 80V.
The method for researching electromagnetic field coupling enhanced deposition ion flow and energy by adopting the device in FIG. 1 and the discharge configuration in FIGS. 2 and 3 comprises the following specific steps:
the method comprises the following steps: selecting an auxiliary anode 6 which is made of stainless steel and has the dimensions of 60mm in inner diameter, 64mm in outer diameter and 50mm in length; 10 layers of electromagnetic coils 7 are made of high-temperature wires, 30 turns of each layer are formed, and 300 turns are formed in total; and a titanium target 8 with a diameter of 50mm and a thickness of 5 mm. And adjusting the positions of the auxiliary anode and the electromagnetic coil, which are 15mm away from the surface of the target, for installation. The gas is exhausted through the molecular pump exhaust hole 2.
Step two: pre-vacuumizing the system is completed, so that the vacuum degree in the vacuum chamber reaches the level of 10-4 Pa; argon gas is introduced into the vacuum chamber, and the pressure is controlled to be 0.8 Pa.
Step three: starting the bipolar pulse magnetron sputtering power supply 9 to glow. The negative pulse output voltage value is adjusted to-520V, and the positive pulse voltage auxiliary bit is + 80V. And adjusting the output voltage of the auxiliary anode power supply 10 to be +80V, then sequentially adjusting the coil current to be 0-3.0A at an interval of 0.2A, and recording the electron density at a position 65mm away from the target surface by using a Langmuir probe.
FIG. 4 shows the selection of a barrel-shaped auxiliary anode and a solenoid coil placed in front of the sputter target, both the auxiliary anode and the solenoid coil being connected to a DC power supply, and the electron density at a position 65mm from the target surface being recorded by adjusting the coil current. The auxiliary anode material is made of stainless steel, the size of the auxiliary anode material is 60mm in inner diameter, 64mm in outer diameter and 50mm in length, and the auxiliary anode material is installed 15mm away from the surface of the sputtering target. The electromagnetic coil is made of high-temperature conducting wires, and has 10 layers, 30 turns in each layer and 300 turns in total. The cathode target is a titanium target with the diameter of 50mm and the thickness of 5 mm. The magnetic control parameters are as follows: negative pulse duration 50 mus, target voltage-520V, positive pulse duration 200 mus, target voltage + 80V. The working gas is argon, and the pressure is 0.8 Pa. The auxiliary anode voltage was set to + 80V.
Advantages of this exemplary scheme:
compared with the prior art, the invention adopts an electromagnetic field coupling mode, the auxiliary anode and the electromagnetic coil are arranged in front of the sputtering target, the auxiliary anode generates an electric field to push ions to move towards the central area of the target in the discharging process, and the magnetic field generated by the electromagnetic coil is used for enhancing the diffusion fluidity of plasma. By controlling the movement, diffusion and collision reaction of charge particles in the plasma, the ionization proportion of gas atoms and target material atoms generated by sputtering is increased, so that the sputtering yield is improved, and the flow and energy of deposited ions are increased. The operation method is economical and practical, improves the magnetron sputtering discharge deposition rate, and improves the performance of the film.
The embodiments of the electromagnetic field coupled bipolar pulse magnetron sputtering system and the method for increasing the flow rate and the energy of the invention are described above, and the purpose of the invention is to explain the spirit of the invention. Note that those skilled in the art can modify and combine the features of the above-described embodiments without departing from the spirit of the present invention, and therefore, the present invention is not limited to the above-described embodiments.
Claims (10)
1. An electromagnetic field coupling bipolar pulse magnetron sputtering system comprises a bipolar pulse magnetron sputtering power supply and a sputtering target, and at least comprises one of an auxiliary anode and an external magnetic field unit, namely, only the auxiliary anode or only the external magnetic field unit or both, wherein the pulse output end of the bipolar pulse magnetron sputtering power supply is connected to the sputtering target, and when the auxiliary anode is included, the auxiliary anode is arranged in front of the sputtering target; when the external magnetic field unit is included, the external magnetic field unit can be arranged on the inner side or the outer side of the auxiliary anode; driving ions generated by negative pulses to fly away from the area near the surface of the sputtering target by adopting a bipolar pulse magnetron discharge mode; optimizing the diffusion of the deposited ions by using an electric field generated by the auxiliary anode; the transmission of electrons is optimized by utilizing the configuration of an external magnetic field, the diffusion fluidity of the plasma is enhanced, and the flow of deposited ions is further increased, so that a bipolar pulse magnetic control power supply, an auxiliary anode and an external magnetic field unit are comprehensively selected and used, the fluidity of the plasma is improved, and the sputtering and ionization efficiencies are increased.
2. The bipolar pulsed magnetron sputtering system of claim 1, wherein the auxiliary anode can be a mesh, barrel, or horn conductor electrode of different shape, material, size.
3. The bipolar pulsed magnetron sputtering system of claim 1, wherein the auxiliary anode is connected to an auxiliary power supply to power it.
4. The bipolar pulse magnetron sputtering system of claim 1, wherein the external magnetic field component can be electromagnetic coil or permanent magnet, and the magnetic field generated by the external magnetic field component is substantially perpendicular to the target surface in the auxiliary anode.
5. The bipolar pulsed magnetron sputtering system of claim 1, wherein the external magnetic field component is mounted within a range of-100 to +200mm from the sputtering target.
6. A method for improving the flow and energy of ions deposited by bipolar pulse magnetron sputtering discharge comprises the following steps:
the method comprises the following steps: selecting an auxiliary anode with proper size, shape and material and an external magnetic field component with proper size and performance, and installing the auxiliary anode and the external magnetic field component in front of a cathode target;
step two: pre-vacuumizing the discharging system is completed;
step three: connecting the positive and negative pulse output ends of the bipolar pulse magnetron sputtering power supply to a cathode target;
step four: a direct current power supply, a controllable pulse power supply or a controllable radio frequency power supply is selected to be connected with the auxiliary anode to provide voltage for the auxiliary anode;
step five: working gas is introduced, the voltage waveform and the space position of the auxiliary anode, even the shape of the auxiliary anode, the position of an external magnetic field component, the magnetic field intensity and the like are adjusted, and the maximum promotion of the flow of the deposited ions is realized.
7. The bipolar pulsed magnetron sputtering system of claim 6, wherein the auxiliary anode can be a mesh, barrel, or horn conductor electrode of different shape, material, size.
8. The bipolar pulsed magnetron sputtering system of claim 6, wherein the auxiliary anode is connected to an auxiliary power supply to power it.
9. The bipolar pulse magnetron sputtering system of claim 6, wherein the external magnetic field component can be electromagnetic coil or permanent magnet, and the magnetic field generated by the external magnetic field component is perpendicular to the target surface in the auxiliary anode.
10. The bipolar pulsed magnetron sputtering system of claim 6, wherein the external magnetic field component is mounted within a range of-100 to +200mm from the sputtering target.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114990508A (en) * | 2022-06-10 | 2022-09-02 | 北京航空航天大学 | Asymmetric bipolar pulse magnetron sputtering system and ion energy and flow regulation method |
| CN115354289A (en) * | 2022-08-26 | 2022-11-18 | 松山湖材料实验室 | Ion source auxiliary deposition system, deposition method and vacuum coating equipment |
Citations (8)
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| CN110295352A (en) * | 2018-03-23 | 2019-10-01 | 东北林业大学 | Electricity-magnetic field collaboration enhancing high-power impulse magnetron sputtering precipitation equipment and method |
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| US20040094411A1 (en) * | 2002-11-14 | 2004-05-20 | Roman Chistyakov | High deposition rate sputtering |
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| CN114990508A (en) * | 2022-06-10 | 2022-09-02 | 北京航空航天大学 | Asymmetric bipolar pulse magnetron sputtering system and ion energy and flow regulation method |
| CN115354289A (en) * | 2022-08-26 | 2022-11-18 | 松山湖材料实验室 | Ion source auxiliary deposition system, deposition method and vacuum coating equipment |
| CN115354289B (en) * | 2022-08-26 | 2023-09-05 | 松山湖材料实验室 | Ion source auxiliary deposition system, deposition method and vacuum coating equipment |
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