CN205152323U - Magnetron sputtering device of utensil high power pulsed ion source - Google Patents
Magnetron sputtering device of utensil high power pulsed ion source Download PDFInfo
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- CN205152323U CN205152323U CN201520840239.XU CN201520840239U CN205152323U CN 205152323 U CN205152323 U CN 205152323U CN 201520840239 U CN201520840239 U CN 201520840239U CN 205152323 U CN205152323 U CN 205152323U
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- magnetron sputtering
- ion source
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Abstract
The utility model belongs to the physical vapor deposition field relates to a magnetron sputtering device of utensil high power pulsed ion source. The device includes the workpiece disk who is supplied power by grid bias power supply, the vacuum cavity continuous with the vacuum pump package, is equipped with in the vacuum cavity and is no less than 2 the magnetron sputtering target by I power supply of power, is equipped with the high power pulsed ion source by II power supplies of power between the adjacent magnetron sputtering target, forms loop configuration in the vacuum cavity. The utility model discloses with the high power pulsed ion source compound mutually with magnetron sputtering, the required high ionization density of magnetron sputtering has been guaranteed to the ion that has produced when having eliminated high power pulse generator as the magnetron sputtering power phenomenon that flows back, and the high power pulsed ion source has improved the deposition rate of film.
Description
Technical field
The utility model belongs to art of physical vapor deposition, relates to a kind of atomically flat film arc ion plating apparatus, may be used for the growth of metallic film, nitride film and carbide thin film.
Background technology
At present, magnetron sputtering and arc ion plating (aip) are the Main Means preparing carbon-base film.Arc technology physics and chemistry rate is high, and the film bonding force of preparation is high but there is the large problem of surfaceness, is difficult to meet high-precision demand.Magnetron sputtering is widely used because its film surface prepared is smooth, and especially follow-on closed field magnetron sputtering improves workpiece surface ion-flow rate, greatly improves film forming efficiency.But arc ion plating relatively, closed field magnetron sputtering ionization level about 10%, density of film and bonding force are difficult to reach desirable state.All there is hard brittleness problems in carbon-base film prepared by these two kinds of methods, is difficult to overcome.The high power pulse sputtering technology (highpowerimpulsemagnetronsputteringHIPIMS) that development in recent years is got up effectively can improve the ionization level (Ti target can reach 90%) of plasma body and plasma density (up to 10
19m
-3the order of magnitude, three orders of magnitude higher than conventional sputter), electronic temp is up to the 10eV order of magnitude.HIPIMS and have the advantage of low temperature depositing high performance thin film, at any substrate deposition functionalized nanostructure film, especially can deposit super tough carbon-base film, overcomes the shortcoming that carbon-base film prepared by traditional method has hard fragility.
But the main limitation that HIPIMS realizes industrial applications is, compared with traditional magnetron sputtering technique, its sedimentation velocity is slower.What the development carrying out efficient HIPIMS technical equipment had become at present the super tough low friction novel thin film of preparation high-performance both at home and abroad and promoted its industrialization process needs key badly.The people such as Sarakinos find after summarizing research in recent years, compare with d.c. sputtering, the rate of film build Ti (15-75%) of HIPIMS technology, Cr (29%), Cu (37-80%), Al (35%), Ta (20-40%), Zr (15%).For this reason, people propose to apply pulsed current again when there being the pre-ionization of outer ion, generally carry out the pre-ionization of ion with D. C magnetic control sputter power source.
External aspect, the people such as P.Vasina are with a pulsewidth 1-60 μ s, pulsed voltage 500-1200V, the high-power impulse magnetron sputtering power supply of frequency 1000Hz with a direct supply compound for the pre-ionization of ion, sputtering voltage, the current waveform under this improving technique is have studied with composite pulse magnetron sputtering technique, and the advantage of this novel process, research shows, high power combined pulsed magnetron sputtering technology solves single high-power impulse magnetron sputtering to be existed snowslide length time of lag and beats the high problem of arc probability, but sedimentation rate improves not remarkable.The people such as the Sang-HunSeo of advanced science and technology institute of Korea S are respectively the power supply compound of 1.7KV and 0.5KV by two pulsed voltages, improve sedimentation rate more than 2 times.The people such as the Vitezslav of physics Institute of Germany have been developed a kind of bipolar HIPIMS technology and have been coupled with medium-frequency pulse, and film deposition rate promotes more than 3 times.In all improvements, the work of the people such as Chistyakov has revolutionary character most, and they have employed multiband pulsed mode, increase dutycycle and pulse length, film deposition rate significantly promoted, the highest can close to traditional arc ion plating, and membrane stress is low, hardness is large.
At home, research about high power pulsed source is less, mainly concentrate in institute and university, the people such as the Tian Xiubo of welding production technology National Key Laboratory as modern in Harbin Institute of Technology, the Mu Zongxin etc. of key lab of the three beams material modification the Ministry of Education of Dalian University of Technology, the Pu Site power supply company of stone electronics institute of Zunhua City three, electron institute, Chinese Academy of Sciences Beijing, southwestern nuclear physics research institute subordinate and Taiwan nuclear energy institute.Domestic exploitation and the improvement mainly concentrating on first-generation HIPIMS.The people such as Tian Xiubo have developed direct current coupling HIPIMS power supply, find that film deposition rate has small elevation.
In sum, high-power impulse magnetron sputtering is better than traditional magnetron sputtering really, and ionization level is 2 orders of magnitude of common magnetron sputtering, but its low sedimentation rate hinders industrial applications.How to develop a set of magnetron sputtering system, while the high ionization level of guarantee, improve its sedimentation rate, application value promotion high power pulse being sputtered to plated film field is great.
Utility model content
The purpose of this utility model proposes the ionogenic magnetic control sputtering device of a kind of tool high power pulse to solve the low and problem that high-power impulse magnetron sputtering sedimentation rate is low of conventional magnetron sputtering ionization level.The high ionization level of high power pulse is transplanted on ion source, reaches high ionization level and do not reduce the object of sedimentation rate.
The ionogenic magnetic control sputtering device of a kind of tool high power pulse, comprise the workpiece plate of being powered by grid bias power supply, the vacuum cavity be connected with vacuum pump group, the magnetron sputtering target of being powered by power supply I being no less than 2 is provided with in vacuum cavity, it is characterized in that between adjacent magnetron sputtering target, being provided with the high power pulse ion source of being powered by power supply II, in vacuum cavity, form closed loop field structure.
Described magnetron sputtering target is rectangle or column spinner target.
Described magnetron sputtering target is metal or nonmetal target.
Described power supply I is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
The ionogenic anode of described high power pulse is bring the cold copper coin structure of air water into.
Described power supply II is high power pulsed source, and this high power pulsed source is conventional high power pulse, bipolar high power pulse or bipolar superposition intermediate frequency high power pulsed source.
Described high power pulse ion source and the contour layout of magnetron sputtering target.
High power pulse ion source excites high energy plasma, forms a high density plasma before target, and the neutral particle of magnetron sputtering is accelerated by ionization in this region, and workpiece is formed fine and close film.
The utility model compared with prior art has the following advantages:
1, the utility model uses high power pulsed source excited ion source to improve ionization level and the plasma density of cavity space.
2, the utility model tool high power pulse ion source magnetron sputtering plasma density 2 orders of magnitude higher than traditional magnetron sputtering of assisting, also higher than magnetron sputtering at least 1 order of magnitude that other ion sources are auxiliary.
3, the utility model by high power pulse ion source with magnetron sputtering phase compound, eliminate high power pulsed source as the ion reflux phenomenon produced during magnetron sputtering power supply, ensure that the high ionization density needed for magnetron sputtering, high power pulse ion source improves the sedimentation rate of film.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In figure: 1-vacuum pump group 2-workpiece plate 3-magnetron sputtering target 4-high power pulse ion source 5-power supply I 6-power supply II 7-grid bias power supply.
Embodiment
Embodiment 1
As shown in Figure 1, the ionogenic magnetic control sputtering device of a kind of tool high power pulse, comprise the workpiece plate 2 of being powered by grid bias power supply 7, the vacuum cavity be connected with vacuum pump group 1, the magnetron sputtering target 3 of being powered by power supply I 5 being no less than 2 is provided with in vacuum cavity, be provided with the high power pulse ion source 4 of being powered by power supply II 6 between adjacent magnetron sputtering target 3, in vacuum cavity, form closed-loop structure.
Magnetron sputtering target 3 is rectangle or column spinner target.
Magnetron sputtering target 3 is metal or nonmetal target.
Power supply I 5 is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
The anode of high power pulse ion source 4 is bring the cold copper coin structure of air water into.
Power supply II 6 is high power pulsed source, and this high power pulsed source is conventional high power pulse, bipolar high power pulse or bipolar superposition intermediate frequency high power pulsed source.
High power pulse ion source 4 and the contour layout of magnetron sputtering target 3.
During use, magnetron sputtering target 3 alternate setting adjacent with high power pulse ion source 4, formation can cut electromagnetic field; Magnetron sputtering target 3 and high power pulse ion source 4 form symmetrized in turn and are arranged in around circular cavity; Vacuum pump group 1 is used for taking out back end vacuum and maintaining plated film air pressure.
Embodiment 2
The device shown in Fig. 1 is adopted to realize the preparation of high-bond titanium nitride membrane;
1, the pure and fresh drying of sample, be evacuated to 1.0 × 10-4Pa, start plated film;
2, bias voltage 1000V, dutycycle 0.4, high power pulsed source voltage 800V, passes into argon gas 0.8Pa, cleans 10 minutes;
3, open 1 group of magnetron sputtering titanium target, bias voltage 800V, dutycycle 0.4, high power pulsed source voltage 600V, passes into argon gas 0.8Pa, bombards 10 minutes;
4, bias voltage is down to 200V, high power pulsed source voltage 600V, argon gas 0.5Pa, nitrogen 0.3Pa, deposits 2 hours;
5, room temperature to be down to takes out sample test, and bonding force is 82N.
Claims (7)
1. the ionogenic magnetic control sputtering device of tool high power pulse, comprise the workpiece plate (2) of being powered by grid bias power supply (7), the vacuum cavity be connected with vacuum pump group (1), the magnetron sputtering target (3) of being powered by power supply I (5) being no less than 2 is provided with in vacuum cavity, it is characterized in that between adjacent magnetron sputtering target (3), being provided with the high power pulse ion source (4) of being powered by power supply II (6), in vacuum cavity, form closed loop field structure.
2. device as claimed in claim 1, is characterized in that described magnetron sputtering target (3) is for rectangle or column spinner target.
3. device as claimed in claim 1, is characterized in that described magnetron sputtering target (3) is for metal or nonmetal target.
4. device as claimed in claim 1, is characterized in that described power supply I (5) is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
5. device as claimed in claim 1, is characterized in that the anode of described high power pulse ion source (4) is bring the cold copper coin structure of air water into.
6. device as claimed in claim 1, it is characterized in that described power supply II (6) is high power pulsed source, this high power pulsed source is conventional high power pulse, bipolar high power pulse or bipolar superposition intermediate frequency high power pulsed source.
7. device as claimed in claim 1, is characterized in that described high power pulse ion source (4) and magnetron sputtering target (3) contour layout.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520840239.XU CN205152323U (en) | 2015-10-27 | 2015-10-27 | Magnetron sputtering device of utensil high power pulsed ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520840239.XU CN205152323U (en) | 2015-10-27 | 2015-10-27 | Magnetron sputtering device of utensil high power pulsed ion source |
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| Publication Number | Publication Date |
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| CN205152323U true CN205152323U (en) | 2016-04-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520840239.XU Withdrawn - After Issue CN205152323U (en) | 2015-10-27 | 2015-10-27 | Magnetron sputtering device of utensil high power pulsed ion source |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105220122A (en) * | 2015-10-27 | 2016-01-06 | 中国科学院兰州化学物理研究所 | The ionogenic magnetic control sputtering device of tool high power pulse |
| CN114000116A (en) * | 2021-10-20 | 2022-02-01 | 江苏集创原子团簇科技研究院有限公司 | Rectangular cluster beam source high-power pulse magnetron sputtering device and testing method |
-
2015
- 2015-10-27 CN CN201520840239.XU patent/CN205152323U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105220122A (en) * | 2015-10-27 | 2016-01-06 | 中国科学院兰州化学物理研究所 | The ionogenic magnetic control sputtering device of tool high power pulse |
| CN105220122B (en) * | 2015-10-27 | 2018-06-29 | 中国科学院兰州化学物理研究所 | Has the magnetic control sputtering device of high power pulse ion source |
| CN114000116A (en) * | 2021-10-20 | 2022-02-01 | 江苏集创原子团簇科技研究院有限公司 | Rectangular cluster beam source high-power pulse magnetron sputtering device and testing method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160413 Effective date of abandoning: 20180629 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20160413 Effective date of abandoning: 20180629 |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |