CN205152320U - Magnetron sputtering coating film device is assisted to anodic field - Google Patents
Magnetron sputtering coating film device is assisted to anodic field Download PDFInfo
- Publication number
- CN205152320U CN205152320U CN201520836093.1U CN201520836093U CN205152320U CN 205152320 U CN205152320 U CN 205152320U CN 201520836093 U CN201520836093 U CN 201520836093U CN 205152320 U CN205152320 U CN 205152320U
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- Prior art keywords
- magnetron sputtering
- power supply
- target
- sputtering target
- anode
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Abstract
The utility model belongs to the physical vapor deposition field discloses a magnetron sputtering coating film device is assisted to anodic field, and the device includes vacuum cavity, workpiece disk and two at least magnetron sputtering targets by I power supply of power, is equipped with the water -cooling positive pole by II power supplies of power between adjacent magnetron sputtering target, forms loop configuration in the vacuum cavity. The utility model discloses to wait high water -cooling positive pole and magnetron sputtering target compound, improve chamber bulk plasmon homogeneity when having strengthened ionization rate.
Description
Technical field
The utility model belongs to art of physical vapor deposition, relate to a kind of ionization level and the plasma uniformity that strengthen space plasma, and then improve the auxiliary magnetic control sputtering film plating device of anodic field of film bonding force and performance, may be used for the growth of vacuum metal film, nitride film and carbide thin film.
Background technology
Magnetron sputtering is that electronics accelerates to fly in the process of substrate to collide with ar atmo under the effect of electric field, and ionize out a large amount of argon ions and electronics, electronics flies to substrate.Argon ion accelerates to bombard target under the effect of electric field, sputters a large amount of target atom, is deposited on film forming on substrate in neutral target atom (or molecule).
In Industrial processes, in the process of workpiece to be plated door t door, plasma cleaning, metal bonding coating and functional layer three basic steps be experienced.The ion source that has conventional at present cleans, and is divided into hall ion source, linear ion source, hollow cathode ion source etc., and wherein first two multimode ionization source is used for optical coating and polymer surfaces coating film treatment, less demanding to bonding force.Hollow cathode ion source is used for instrument plated film, but its operating distance is short, and needs electromagnetic field to assist, and therefore equipment generally can not more than the size of 700mm.Magnetron sputtering is owing to sharply declining away from ionization level during target, and often voidage is large, especially when batch plated film for the film of preparation, workpiece can experience the wave change of ionization level, near target, film quality is high, poor away from target mass, is therefore necessary the space ionization level improving magnetron sputtering.
The method of current raising space ionization level has closed field magnetron sputtering, as the closed field magnetron sputtering (British Patent No. 2258343, U.S. Patent number 5554519, european patent number 0521045) of Teer company of Britain, make use of the magnetic field of non-balance magnetically controlled sputter extension, by reasonably designing, adjacent magnetic field is closed, form electron channel, electronics prolongs these magnetic line of force and rotates, and improves ionization level with neutral collisions.
At home, utility model patent ZL201210161364.9, patent 201210474290.4, patent 201220233276.0 discloses the design of closed field magnetic control sputtering device, almost with Teer company.Patent ZL201220209547.9 has then done amendment on this basis, and the column magnetic control adopting inner ring to place forms closed magnetic field; Patent ZL98120365.5 discloses the closed magnetic control sputtering device in a kind of concentricity magnetic field of non-equilibrium target, and the magnetic field that center is placed and target reversing magnetic field symmetry, magnetic line of force, through workpiece to be plated, greatly improves the ionization level of coating film area.Dalian University of Science & Engineering discloses a kind of plasma intensified non-balance magnetically controlled sputter method (ZL01116734.3), utilizes microwave ion source to assist the ionization level improving magnetron sputtering.
The shortcoming of above-mentioned technology must reach the closed object in magnetic field by close magnetic controlling target, and equipment is complicated, high expensive; Microwave plasma source is difficult to realize large-area assistant depositing.
Utility model content
The purpose of this utility model is that in order to solve, coating quality in processes of physical vapor deposition is poor, the inhomogenous problem of film proposes the auxiliary magnetic control sputtering film plating device of a kind of anodic field.The utility model is by strengthening the ionization level of space plasma and plasma uniformity and then improving film bonding force and performance, and anode is by the copper coin of one piece of water-cooled with provide the device of power supply to form to copper coin, is suitable for the deposition of large area film.
The auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate and at least two magnetron sputtering targets of being powered by power supply I, it is characterized in that between adjacent magnetron sputtering target, be provided with the water-cooled anode of being powered by power supply II, in vacuum cavity, form closed-loop structure.
Described magnetron sputtering target is rectangle or column spinner target.
Described magnetron sputtering target is metal or nonmetal target.
Described power supply I is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
Described anode brings the cold copper coin structure of air water into.
The direct-flow positive voltage of described power supply II to be grid bias power supply or voltage be 50-500V.
Described anode and the contour layout of magnetron sputtering target.
The electronics that the utility model is excited by magnetron sputtering flies to anode under positive electric field effect, with neutral collisions aggravation ionization level in flight course, between anode and magnetic controlling target, form ionic channel thus, reach the object improving ionization level and homogenize cavity plasma body.
The utility model compared with prior art has the following advantages:
1, the utility model is by contour water-cooled anode and magnetron sputtering target compound, improves cavity plasma uniformity while enhancing ionization level.
2, the use of water-cooled anode described in the utility model reduces the necessary adjacent target layout of closed field magnetic control, improves space availability ratio and plated film efficiency.
3, water-cooled anode described in the utility model also can be used in conjunction with grid bias power supply the effect reaching PECVD plated film.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In figure: 1-magnetron sputtering target, 2-anode, 3-power supply I, 4-workpiece plate, 5-power supply II.
Embodiment
Embodiment 1
As shown in Figure 1, the auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate 4 and at least two magnetron sputtering targets 1 of being powered by power supply I 3, between adjacent magnetron sputtering target 1, be provided with the water-cooled anode 2 of being powered by power supply II 5, in vacuum cavity, form closed-loop structure.
Magnetron sputtering target 1 is rectangle or column spinner target.
Magnetron sputtering target 1 is metal or nonmetal target.
Power supply I 3 is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
Anode 2 brings the cold copper coin structure of air water into.
The direct-flow positive voltage of power supply II 5 to be grid bias power supply or voltage be 50-500V.
Anode 2 and the contour layout of magnetron sputtering target 1.
Embodiment 2
The auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate 4 and at least two magnetron sputtering targets 1 of being powered by power supply I 3, between adjacent magnetron sputtering target 1, be provided with the water-cooled anode 2 of being powered by power supply II 5, in vacuum cavity, form closed-loop structure.Wherein rectangle magnetron sputtering target 1 size 200 × 800mm
2, adopt multiple track water-cooled to arrange, the design of band additional-air inlet; Water-cooled anode 2 size 100 × 800mm
2, hollow water-cooled cathode design, band gas distribution structure; Power supply I 3 adopts 10KW direct current pulse power source or DC power supply; Water-cooled anode 2 adopts 3KW direct-flow positive voltage; Low temperature molecular pump system is adopted to vacuumize the maintenance with air pressure during plated film.
Embodiment 3
The auxiliary magnetic control sputtering film plating device of a kind of anodic field, comprise vacuum cavity, workpiece plate 4 and at least two magnetron sputtering targets 1 of being powered by power supply I 3, between adjacent magnetron sputtering target 1, be provided with the water-cooled anode 2 of being powered by power supply II 5, in vacuum cavity, form closed-loop structure.Wherein rectangle magnetron sputtering target 1 size 100 × 800mm
2, adopt multiple track water-cooled to arrange; Water-cooled anode 2 size 100 × 800mm
2, hollow water-cooled cathode design, band gas distribution structure; Power supply I 3 adopts 10KW bipolar pulse power supply or bipolar high power pulsed source; Water-cooled anode 2 adopts 3KW direct-flow positive voltage; Low temperature molecular pump system is adopted to vacuumize the maintenance with air pressure during plated film.
Embodiment 4
The device shown in Fig. 1 is adopted to realize the preparation of high-bond titanium nitride membrane:
The pure and fresh drying of sample, be evacuated to 1.0 × 10
-4pa, starts plated film; Bias voltage 1000V, dutycycle 0.4, anode positive voltage 500V, passes into argon gas 0.8Pa, cleans 10 minutes; Open 2 groups of magnetron sputtering titanium targets, bias voltage 800V, dutycycle 0.4, anode positive voltage 500V, passes into argon gas 0.8Pa, bombards 10 minutes; Bias voltage is down to 200V, anode positive voltage 150V, argon gas 0.5Pa, nitrogen 0.3Pa, deposits 2 hours
;room temperature to be down to takes out sample test, and bonding force is 62N.
Claims (7)
1. the auxiliary magnetic control sputtering film plating device of anodic field, comprise vacuum cavity, workpiece plate (4) and at least two magnetron sputtering targets (1) of being powered by power supply I (3), it is characterized in that between adjacent magnetron sputtering target (1), be provided with the water-cooled anode (2) of being powered by power supply II (5), in vacuum cavity, form closed-loop structure.
2. device as claimed in claim 1, is characterized in that described magnetron sputtering target (1) is for rectangle or column spinner target.
3. device as claimed in claim 1, is characterized in that described magnetron sputtering target (1) is for metal or nonmetal target.
4. device as claimed in claim 1, is characterized in that described power supply I (3) is direct current, DC pulse, intermediate frequency, radio frequency or high power pulsed source.
5. device as claimed in claim 1, is characterized in that described anode (2) brings the cold copper coin structure of air water into.
6. device as claimed in claim 1, is characterized in that described power supply II (5) to be grid bias power supply or voltage is the direct-flow positive voltage of 50-500V.
7. device as claimed in claim 1, is characterized in that described anode (2) and magnetron sputtering target (1) contour layout.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520836093.1U CN205152320U (en) | 2015-10-27 | 2015-10-27 | Magnetron sputtering coating film device is assisted to anodic field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520836093.1U CN205152320U (en) | 2015-10-27 | 2015-10-27 | Magnetron sputtering coating film device is assisted to anodic field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205152320U true CN205152320U (en) | 2016-04-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520836093.1U Withdrawn - After Issue CN205152320U (en) | 2015-10-27 | 2015-10-27 | Magnetron sputtering coating film device is assisted to anodic field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205152320U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200381A (en) * | 2015-10-27 | 2015-12-30 | 中国科学院兰州化学物理研究所 | Anode field assisted magnetron sputtering coating apparatus |
| CN108070830A (en) * | 2016-11-07 | 2018-05-25 | 三星显示有限公司 | Precipitation equipment and the deposition method using the device |
-
2015
- 2015-10-27 CN CN201520836093.1U patent/CN205152320U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200381A (en) * | 2015-10-27 | 2015-12-30 | 中国科学院兰州化学物理研究所 | Anode field assisted magnetron sputtering coating apparatus |
| CN105200381B (en) * | 2015-10-27 | 2018-06-12 | 中国科学院兰州化学物理研究所 | The auxiliary magnetic control sputtering film plating device of anodic field |
| CN108070830A (en) * | 2016-11-07 | 2018-05-25 | 三星显示有限公司 | Precipitation equipment and the deposition method using the device |
| CN108070830B (en) * | 2016-11-07 | 2021-11-23 | 三星显示有限公司 | Deposition apparatus and deposition method using the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160413 Effective date of abandoning: 20180612 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20160413 Effective date of abandoning: 20180612 |