CN108070830A - Precipitation equipment and the deposition method using the device - Google Patents
Precipitation equipment and the deposition method using the device Download PDFInfo
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- CN108070830A CN108070830A CN201711034759.1A CN201711034759A CN108070830A CN 108070830 A CN108070830 A CN 108070830A CN 201711034759 A CN201711034759 A CN 201711034759A CN 108070830 A CN108070830 A CN 108070830A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Abstract
It can make the equally distributed precipitation equipment of deposited material and the deposition method using the device the present invention relates to a kind of.Precipitation equipment according to an embodiment of the invention has：Cavity plate, positioned at the inside of chamber；Substrate support pedestal, be arranged in the inside of the chamber with the cavity plate to；And multiple anodes, be rotatably arranged between the cavity plate and the substrate support pedestal, wherein, the anode have it is rod-shaped, and perpendicular to the section of length direction have rectangular shape.
Description
Technical field
The embodiment of the present invention is related to a kind of precipitation equipment and can be with using the deposition method more particularly to one kind of the device
Make the equally distributed precipitation equipment of deposited material and the deposition method using the device.
Background technology
With the prosperity of informationization technology, the importance of the display device as the connection medium between user and information is convex
It is aobvious.In response to this, liquid crystal display device (Liquid Crystal Display Device) and organic electroluminescence display device and method of manufacturing same
The use of the display device (Display Device) of (Organic Light Emitting Display Device) etc is just
Increasing.
Precipitation equipment is used to deposit to deposited material including liquid crystal display device and organic electroluminescence display device and method of manufacturing same
Substrates for semiconductor elements.
Precipitation equipment usually deposits predetermined substance in such a way.First, argon gas (Ar) and/or oxygen (O will be included2)
Process gas be injected into the chamber of vacuum state.Then, if applying predetermined voltage, process gas in anode and cathode
Body is ionized by means of plasma, and collides target.If the gas collisions of ionization, to target, deposited material is released
It puts, the deposited material being released is attached at substrate and forms film.
In addition, anode is between substrate and target.Therefore, a part for the deposited material released from target is hindered by anode
Disconnected, then deposited material inhomogeneous deposition is on substrate.
The content of the invention
Therefore, the present invention is intended to provide a kind of can make the equally distributed precipitation equipment of deposited material and utilize the device
Deposition method.
A kind of precipitation equipment according to an embodiment of the invention, has：Cavity plate, positioned at the inside of chamber；Substrate supports
Platform, be arranged in the inside of the chamber with the cavity plate to；And multiple anodes, it is rotatably arranged on the cavity
Between plate and the substrate support pedestal, wherein, the anode have it is rod-shaped, and perpendicular to the section of length direction have rectangle
Shape.
Precipitation equipment according to the embodiment also has：Rotation axis is connected to the anode, and with the length along the anode
Spend the shape of direction extension；And rotating part, for the rotation axis to be made to be rotated along predetermined direction.
For precipitation equipment according to the embodiment, using the section of the anode perpendicular to the length direction as base
Standard, the rotation axis are located at the central part of the anode.
For precipitation equipment according to the embodiment, using the section of the anode perpendicular to the length direction as base
Standard, the central part of the rotation axis from the anode are separated by and arrange.
For precipitation equipment according to the embodiment, the anode has：Multiple through holes, with perpendicular to the length
The mode in direction runs through the anode.
For precipitation equipment according to the embodiment, the through hole is along the length direction and with identical spacing cloth
It puts.
Precipitation equipment according to the embodiment also has：Protruding portion, with cutting perpendicular to the anode of the length direction
On the basis of face, protruded from the rectangle short side of the anode.
For precipitation equipment according to the embodiment, it is with song that the protruding portion is protruded from the rectangular short side
Line.
For precipitation equipment according to the embodiment, the anode adjacent to each other rotates in same direction.
For precipitation equipment according to the embodiment, the anode adjacent to each other is rotated along mutually different direction.
Precipitation equipment according to the embodiment also has：Backboard is fixed on the cavity plate；Target is fixed on the backboard；It covers
Film, between the anode and the substrate support pedestal, for making to be supplied to institute's phase from the deposited material that the target discharges
The region of prestige；And magnetron, positioned at the back side of the backboard, for generating magnetic field.
A kind of deposition method according to an embodiment of the invention, including the steps：Process gas is fed to chamber
Inside；By mutually different voltage supply to target and multiple anodes to form plasma, the target is located at the chamber
Inside, the multiple anode are rotated along predetermined direction；And make to make what is discharged from the target by means of the plasma
Electrodeposition substance in substrate, wherein, the anode have it is rod-shaped, and perpendicular to the section of length direction have rectangular shape.
For precipitation equipment according to the embodiment, the anode adjacent to each other rotates in same direction.
For precipitation equipment according to the embodiment, the anode adjacent to each other is rotated along mutually different direction.
For precipitation equipment according to an embodiment of the invention, anode is arranged in the form of rectangular, at the same time
Anode is made to be rotated along predetermined direction.Then, the blocking of the deposited material as caused by anode can be minimized, makes deposited material accordingly
It is uniformly distributed in substrate.
Also, in an embodiment of the present invention, in order to enable deposited material by forming multiple holes in the anode, according to
This can improve the uniformity for the deposited material for being deposited on substrate.
Description of the drawings
Fig. 1 is the sectional view according to the precipitation equipment of the embodiment of the present invention.
Fig. 2 is the figure for representing the embodiment of blocking unit shown in Fig. 1.
Fig. 3 a and Fig. 3 b are the sectional side view for representing the anode in precipitation equipment shown in Fig. 1.
Fig. 4 is the figure for representing the embodiment of anode shown in Fig. 1.
Fig. 5 a and Fig. 5 b are the figure of the blocking for the deposited material for representing the form corresponding to anode.
Fig. 6 is the figure for the embodiment for representing the deposited material deposited in anode shown in Fig. 4.
Fig. 7 is the figure for representing another embodiment of anode shown in Fig. 1.
Fig. 8 is the figure for the blocking for representing the deposited material corresponding to the anode of Fig. 7.
Fig. 9 is the figure of the embodiment of the deposited material deposited in the anode for represent Fig. 7.
Figure 10 a and Figure 10 b are the figure for representing the shape of anode shown in Fig. 4 and Fig. 7.
Figure 11 is the figure for representing the another embodiment of anode shown in Fig. 1.
Symbol description
100：Substrate support pedestal 110：Substrate
210：Backboard 212：Cavity plate
220：Target 222：Deposited material
230：Magnetron 300：Anode
302：Through hole 304：Main part
306：Protruding portion 310：Rotating part
320：Rotation axis 400：Mask
410：Blocking unit 420：Opening portion
1000：Chamber 1100：Pump
1200：Power suppling part
Specific embodiment
Hereinafter, by reference to appended figure to the embodiment of the present invention and in addition skilled addressee readily understands that originally
Item needed for the content of invention is recorded in detail.However, the present invention can be in the scope recorded in claims with more
The different form of kind realizes that embodiment explained below is stated independent of it and is exemplary record.
It that is, but can be real by mutually different various form the invention is not limited in embodiment disclosed below
It is existing, when being expressed as certain part in the following description and being connected with other parts, not only including the situation being directly connected to, but also
The situation being electrically connected including in-between sandwiched other elements.It must also notice, in the accompanying drawings, for identical inscape, though
It is so illustrated in different figures, but assigns identical reference numeral and symbol as far as possible.
Fig. 1 is the sectional view for representing precipitation equipment according to an embodiment of the invention.
With reference to figure 1, precipitation equipment according to an embodiment of the invention has chamber 1000, pump 1100 and power suppling part
1200。
Pump 1100 is used to the air inside chamber 1000 being discharged to the outside.That is, pump 1100 is used to maintain chamber 1000
Into vacuum state.
Chamber 1000 is separated with peripheral region, and maintains vacuum state by means of pump 1100.In chamber as described above
1000 inside, predetermined substance is as thin film deposition on substrate 110.For this purpose, chamber 1000 has substrate support pedestal 100, sky
Cavity plate 212, backboard (Backing Plate) 210, target 220, anode 300 and mask 400.
Substrate 110 is moved into chamber 1000 or is taken out of from chamber 1000 by substrate support pedestal 100.Moreover, substrate support pedestal 100
Substrate 110 is fixed for being deposited in deposited material in the period of substrate 110.
Target 220 represents to be intended to be deposited on the deposited material of substrate 110.Here, deposited material includes that substrate 110 can be deposited on
Various substance, may include the substance of ITO, IZO, IGZO or MoN etc as an example.
Backboard 210 is arranged between chamber 1000 and target 220, that is, is arranged in the back side of target 220.Backboard as described above
210 fix target 220.Additionally, cooling water (not shown) in the internal flow of backboard 210, accordingly in the temperature of limit target 220
It rises.Also, backboard 210 obtains power supply supply from power suppling part 1200, and the power supply supplied is supplied to target 220.From
The target 220 that power suppling part 1200 obtains power supply supply is driven to cathode in order to form plasma.
Cavity plate 212 is arranged between backboard 210 and chamber 1000, i.e., positioned at the back side of backboard 210.It is as described above empty
Cavity plate 212 fixes backboard 210.For this purpose, cavity plate 212 can be arranged to be fixed on chamber 1000.
Multiple anodes 300 are disposed between target 220 and substrate 110.Anode 300 as described above is via power suppling part
1200 obtain power supply supply.It obtains the anode 300 of power supply supply and is driven to cathode-driven target 220 (and backboard 210)
Plasma is formed together.
If forming plasma in chamber 1000, process gas is ionized, and collides target 220.By means of
Sputtering as described above, releases deposited material, the deposited material released is deposited on substrate 110 from target 220.
In addition, anode 300 has bar (bar) shape in an embodiment of the present invention, and have perpendicular to the section of length direction
There is rectangular shape.That is, anode 300 is formed as having rectangular shape when from the upside of chamber 1000 and side
Shape.Anode 300 is rotated along predetermined direction, can be stably formed plasma in chamber 1000 accordingly.It will be later to this
It is described in detail.
Mask 400 is arranged between anode 300 and substrate 110.Mask 400 as described above, which performs control to, makes deposit
Matter can be supplied to desired region (that is, substrate 110).For this purpose, as shown in Fig. 2, mask 400 includes 410 He of blocking unit
Opening portion 420.
As with 110 corresponding region of substrate, the deposited material for making direction substrate 110 passes through for opening portion 420.It blocks
Portion 410 then blocks for that will be directed toward the deposited material in the region beyond substrate 110.That is, blocking unit 410 prevents deposited material from depositing
In wall of chamber 1000 etc..
Power suppling part 1200 is used to power supply being supplied to backboard 210 (that is, target 220) and anode 300.As an example, it is electric
Negative voltage can be supplied to backboard 210 by source supply department 1200, and positive voltage is supplied to anode 300.
Such power suppling part 1200 can supply various voltage, can be formed between target 220 and anode 300
Gas ions.As an example, power suppling part 1200 can supply direct current (DC) or exchange (AC) power supply.
Operating process is carried out as described below.Chamber 1000 is set to vacuum state by means of pump 1100.Then, work
Skill gas is supplied to chamber 1000.As process gas, it may include the inert gas of argon gas etc and/or include oxygen, nitrogen
Reactant gas (reactive gas) including gas, hydrogen, ammonia, ozone etc..
If process gas is supplied in chamber 1000, created an atmosphere (atmosphere) in chamber 1000.So
Afterwards, predetermined voltage is supplied to target 220 (and backboard 210) and anode 300 by power suppling part 1200, then in target 220 and sun
Plasma is formed between pole 300.If forming plasma in chamber 1000, process gas is ionized, and is collided
To target.By means of sputtering (sputtering) as described above, deposited material is released from target, and the deposited material released sinks
Product is in substrate 110.Precipitation equipment according to an embodiment of the invention repeats the above process, so as to form deposit in substrate 110
Matter.
In addition, precipitation equipment according to an embodiment of the invention can also include the magnetron positioned at the back side of backboard 210
230.Magnetron 230 forms magnetic field, thus by the kinematic constraint of the ion generated by plasma around target 220, and make shifting
Dynamic path extends, so as to improve sputtering yield.
Fig. 3 a and Fig. 3 b are the sectional side view for representing the anode in precipitation equipment shown in Fig. 1.
With reference to figure 3a and Fig. 3 b, anode 300 is arranged in inside chamber 1000, and by means of rotation axis 320 and rotatably
It sets.That is, each anode 300 is connected to mutually different rotation axis 320.Rotation axis 320 has along the length side of anode 300
To the shape of extension.
Rotation axis 320 is rotated by the rotating part 310 positioned at the outside of chamber 1000 with predetermined direction and predetermined speed.
For this purpose, it may include not shown motor etc. in rotating part 310.
As shown in Figure 3a, anode 300 adjacent to each other can in the same direction be rotated by means of rotating part 310.Moreover, that
This adjacent anode 300 can be rotated along mutually different direction as shown in Figure 3b by means of rotating part 310.In view of heavy
Product uniformity etc. can be determined by experiment direction of rotation and the rotary speed of anode 300.
Fig. 4 is the figure for representing the embodiment of anode shown in Fig. 1.
With reference to figure 4, in an embodiment of the present invention, for anode 300, there is length perpendicular to the section of length direction
Square form, and rotated by means of rotation axis 320 along predetermined direction.Here, rotation axis 320 is with perpendicular to length direction
Anode 300 section on the basis of and positioned at central part.
Additionally, if anode 300 is formed as rectangular form, the deposition blocked by anode 300 can be minimized
The amount of substance.
As an example, as shown in Figure 5 a, when anode is with circular arrangement, deposited material is by anodal block, then deposit
Matter possibly can not be uniformly deposited at substrate 110.
On the contrary, as shown in Figure 5 b, when anode 300 is on the basis of perpendicular to the section of length direction and with rectangular shape
When state is simultaneously rotated along predetermined direction simultaneously, the amount of the deposited material blocked by anode 300 is minimized.In the case, sink
Product substance can uniform deposition on substrate 110.
Additionally, three anodes in multiple anodes are illustrated for convenience of description and only in figs. 5 a and 5b.Also,
Anode 300 is illustrated as in figure 5b with mutually the same angle, however the present invention is not limited thereto.As an example, anode
300 direction of rotation and rotary speed can be determined by experiment, so that deposited material uniform deposition is in substrate 110.
In addition, anode 300 is rotated along predetermined direction, then the rotation area of anode 300 is set to as shown in Figure 4
Dashed region.That is, corresponding to the rotation of anode 300, the rotation area of anode 300 is set to the circle broader than rectangle
Area, can be stably formed plasma in chamber 1000 accordingly.
Fig. 6 is the figure for the embodiment for representing the deposited material deposited in anode shown in Fig. 4.
With reference to figure 6, anode 300 according to an embodiment of the invention is rotated along predetermined direction, and then deposited material 222 is heavy
Product is in the two sides of anode 300.As an example, deposited material 222 can be deposited on the anode 300 of rectangular form both sides it is long
Side (deposited material 222 can be corresponding with rectangular bond length and be also deposited on short side).As described above by deposit
In the case that matter 222 is deposited on the both sides of anode 300, the stress that anode 300 is applied to due to deposited material 222 is able to minimum
Change.
As an example, when anode 300 does not rotate, deposited material 222 is only deposited at the one side of anode 300.Herein
In the case of, the stress as caused by deposited material 222 is accumulated by, so as to bend anode 300.
Fig. 7 is the figure for representing another embodiment of anode shown in Fig. 1.
With reference to figure 7, in another embodiment of the invention, for anode 300 ', perpendicular to the section of length direction
It is rotated with rectangular form, and by means of rotation axis 320 ' along predetermined direction.Wherein, rotation axis 320 ' with perpendicular to
It is separated by from the central part of anode and arranges on the basis of the section of length direction.As an example, rotation axis 320 ' can with it is rectangular
Any one short side in two short sides of the anode 300 ' of the form of shape is disposed adjacent to.
Anode 300 ' by be arranged as on the basis of the section perpendicular to length direction it is rectangular in the form of, at the same time rotate
Axis 320 ' is separated by from the central part of anode and is arranged on the basis of perpendicular to the section of length direction, in the case, positive
The amount for the deposited material that pole 300 ' blocks is minimized.
That is, rotation axis 320 ' is located at the side end of anode 300 ' while anode 300 ' is arranged in the form of rectangular
When, as described in Figure 8, the deposited material blocked by anode 300 ' is measured to minimum.In the case, deposited material can be uniform
It is deposited on substrate 110.
In fig. 8, for convenience of description, three anodes 300 ' in multiple anodes are only illustrated.Moreover, in fig. 8, figure
All anodes 300 ' are shown as with mutually the same angle, however the present invention is not limited thereto.As an example, the rotation of anode 300 '
Turning direction and rotary speed can be determined by experiment, so that deposited material uniform deposition is in substrate 110.
Additionally, anode 300 ' is rotated along predetermined direction, and then the rotation area of anode 300 ' is set to such as Fig. 7 institutes
The dashed region shown.That is, corresponding to the rotation of anode 300 ', the rotation area of anode 300 ' is set to broader than rectangle
Circular area, can be stably formed plasma in chamber 1000 accordingly.
Also, in another embodiment of the invention, rotation axis 320 ' is located at the side end of anode 300 ', therefore can
Possesses identical rotation area with the approximately half of size of the anode 300 of Fig. 4.In an embodiment of the present invention, anode 300 '
Size, the position of rotation axis 320 ' can be determined by experiment so that plasma stability is formed.
Fig. 9 is the figure of the embodiment of the deposited material deposited in the anode for represent Fig. 7.
With reference to figure 9, anode 300 ' according to another embodiment of the present invention is rotated along predetermined direction, then deposited material
222 are deposited on the two sides of anode 300 '.As an example, deposited material 222 can be deposited on the anode 300 ' of rectangular form
Both sides long side (deposited material 222 can be corresponding with rectangular bond length and be also deposited on short side).As described above
In the case that the deposited material 222 is deposited on the both sides of anode 300 ', answering for anode 300 ' is applied to due to deposited material 222
Power is minimized.
Figure 10 a and Figure 10 b are the figure for representing the shape of anode shown in Fig. 4 and Fig. 7.
With reference to figure 10a, in an embodiment of the present invention, on the basis of perpendicular to the section of length direction, rectangular shape
The anode 300,300 ' of state (that is, rectangle is rod-shaped) is located between the upside and downside of chamber 1000.Anode as described above
300th, 300 ' rotate along a side direction.Then, as mentioned above, anode 300,300 ' can make to be directed toward 110 side of substrate from target 220
Deposited material blocking amount minimize.
With reference to figure 10b, in another embodiment of the invention, on the basis of perpendicular to the section of length direction, rectangle
The anode 300,300 ' of form be located between the upside and downside of chamber 1000.In anode 300,300 ' as described above,
Equipped with the multiple through holes 302 for running through anode 300,300 ' in a manner of perpendicular to length direction.Through hole as described above
302 are used to make to be directed toward the deposited material of 110 side of substrate by may insure to be deposited on the deposit of substrate 110 accordingly from target 220
The uniformity of matter.
In addition, in the above description, on the basis of perpendicular to the section of length direction, anode 300,300 ' is recorded as growing
Square form, however the present application is not limited thereto.As an example, anode 300,300 ' can be set by various form
It is fixed, to realize the minimum of the blocking amount for the deposited material that 110 side of substrate is directed toward from target 220.
As an example, as shown in figure 11, anode 300,300 ' on the basis of perpendicular to the section of length direction and can be with
The protruding portion 306 protruded with rectangular main part 304 and from the short side of main part 304.Protruding portion 306 is from main part
304 protrude as with curve.
Here, if the short side in main part 304 forms protruding portion 306 with arc-shaped, deposited material 222 can be prevented
It is deposited on protruding portion 306.In the case, the rotation area of anode 300,300 ' can consistently be maintained, may insure accordingly
The reliability of driving.
Although specifically describing the technological thought of the present invention according to above preferred embodiment, above-described embodiment is intended to
It is described, not for being limited, this should be noticed.Moreover, possesses base in technical field of the invention in every case
The personnel of this knowledge, it becomes possible to realize various variation in the scope of the technological thought of the present invention, this point presumably can be with
Understand.
Interest field on aforementioned invention is determined by claims, is not limited to the record of specification text,
The deformation and change for belonging to the equivalency range of claims all belong to the scope of the present invention.
Claims (14)
1. a kind of precipitation equipment, which is characterized in that have：
Cavity plate, positioned at the inside of chamber；
Substrate support pedestal, be arranged in the inside of the chamber with the cavity plate to；And
Multiple anodes are rotatably arranged between the cavity plate and the substrate support pedestal,
Wherein, the anode has rod-shaped, and has rectangular shape perpendicular to the section of length direction.
2. precipitation equipment as described in claim 1, which is characterized in that also have：
Rotation axis is connected to the anode, and the shape extended with the length direction along the anode；And
Rotating part, for the rotation axis to be made to be rotated along predetermined direction.
3. precipitation equipment as claimed in claim 2, which is characterized in that with cutting perpendicular to the anode of the length direction
On the basis of face, the rotation axis is located at the central part of the anode.
4. precipitation equipment as claimed in claim 2, which is characterized in that with cutting perpendicular to the anode of the length direction
On the basis of face, the central part of the rotation axis from the anode is separated by and arranges.
5. precipitation equipment as described in claim 1, which is characterized in that the anode has：
Multiple through holes run through the anode in a manner of perpendicular to the length direction.
6. precipitation equipment as claimed in claim 5, which is characterized in that the through hole is along the length direction and with identical
Away from arrangement.
7. precipitation equipment as described in claim 1, which is characterized in that also have：
Protruding portion, on the basis of perpendicular to the section of the anode of the length direction, from the rectangle short side of the anode
It is prominent.
8. precipitation equipment as claimed in claim 7, which is characterized in that the protruding portion is from the rectangular short side to have
The mode of curve protrudes.
9. precipitation equipment as described in claim 1, which is characterized in that the anode adjacent to each other rotates in the same direction.
10. precipitation equipment as described in claim 1, which is characterized in that the anode adjacent to each other is along mutually different side
To rotation.
11. precipitation equipment as described in claim 1, which is characterized in that also have：
Backboard is fixed on the cavity plate；
Target is fixed on the backboard；
Mask, between the anode and the substrate support pedestal, for making to be supplied from the deposited material that the target discharges
To desired region；And
Magnetron, positioned at the back side of the backboard, for generating magnetic field.
12. a kind of deposition method, which is characterized in that including the steps：
Process gas is fed to the inside of chamber；
By mutually different voltage supply to target and multiple anodes to form plasma, the target is located at the interior of the chamber
Portion, the multiple anode are rotated along predetermined direction；And
Make by means of the plasma and from the electrodeposition substance that the target discharges in substrate,
Wherein, the anode has rod-shaped, and has rectangular shape perpendicular to the section of length direction.
13. deposition method as claimed in claim 12, which is characterized in that the anode adjacent to each other revolves in same direction
Turn.
14. deposition method as claimed in claim 12, which is characterized in that the anode adjacent to each other is along mutually different side
To rotation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160147514A KR20180051693A (en) | 2016-11-07 | 2016-11-07 | Deposition apparatus and deposition method thereof |
| KR10-2016-0147514 | 2016-11-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108070830A true CN108070830A (en) | 2018-05-25 |
| CN108070830B CN108070830B (en) | 2021-11-23 |
Family
ID=62159503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711034759.1A Active CN108070830B (en) | 2016-11-07 | 2017-10-30 | Deposition apparatus and deposition method using the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20180051693A (en) |
| CN (1) | CN108070830B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111893441A (en) * | 2019-05-06 | 2020-11-06 | 领凡新能源科技(北京)有限公司 | Preparation method of film and reaction chamber |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210148458A (en) * | 2020-05-28 | 2021-12-08 | 삼성디스플레이 주식회사 | Depositing device and depositing method using depositing device |
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| JP2001158958A (en) * | 1999-11-30 | 2001-06-12 | Kobe Steel Ltd | Arc discharge ion plating equipment |
| US20020195332A1 (en) * | 2000-06-28 | 2002-12-26 | Burton Clive H. | Multi-anode device and methods for sputter deposition |
| CN1896299A (en) * | 2005-07-13 | 2007-01-17 | 应用材料公司 | Improved magnetron sputtering system for large-area substrates possessing a removable anode |
| CN101104921A (en) * | 2006-07-14 | 2008-01-16 | 应用材料股份有限公司 | Cooled anodes |
| US20100213054A1 (en) * | 2009-02-24 | 2010-08-26 | Industrial Technology Research Institute | Vacuum coating apparatus with mutiple anodes and film coating method using the same |
| CN205152320U (en) * | 2015-10-27 | 2016-04-13 | 中国科学院兰州化学物理研究所 | Magnetron sputtering coating film device is assisted to anodic field |
| CN205223339U (en) * | 2015-11-27 | 2016-05-11 | 广州巴达精密刀具有限公司 | Coating film system with addition positive pole |
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2016
- 2016-11-07 KR KR1020160147514A patent/KR20180051693A/en not_active Application Discontinuation
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|---|---|---|---|---|
| JP2001158958A (en) * | 1999-11-30 | 2001-06-12 | Kobe Steel Ltd | Arc discharge ion plating equipment |
| US20020195332A1 (en) * | 2000-06-28 | 2002-12-26 | Burton Clive H. | Multi-anode device and methods for sputter deposition |
| CN1896299A (en) * | 2005-07-13 | 2007-01-17 | 应用材料公司 | Improved magnetron sputtering system for large-area substrates possessing a removable anode |
| CN101104921A (en) * | 2006-07-14 | 2008-01-16 | 应用材料股份有限公司 | Cooled anodes |
| US20100213054A1 (en) * | 2009-02-24 | 2010-08-26 | Industrial Technology Research Institute | Vacuum coating apparatus with mutiple anodes and film coating method using the same |
| CN205152320U (en) * | 2015-10-27 | 2016-04-13 | 中国科学院兰州化学物理研究所 | Magnetron sputtering coating film device is assisted to anodic field |
| CN205223339U (en) * | 2015-11-27 | 2016-05-11 | 广州巴达精密刀具有限公司 | Coating film system with addition positive pole |
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| CN111893441A (en) * | 2019-05-06 | 2020-11-06 | 领凡新能源科技(北京)有限公司 | Preparation method of film and reaction chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108070830B (en) | 2021-11-23 |
| KR20180051693A (en) | 2018-05-17 |
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