KR101430660B1 - Apparatus to sputter - Google Patents

Abstract

A sputtering apparatus is disclosed. A sputtering apparatus according to an embodiment of the present invention includes: a process chamber for forming a deposition space for a substrate; A target module disposed within the process chamber, the target module providing deposition material to the substrate; And a deposition prevention module disposed within the process chamber and spaced apart from the target module such that deposition material sputtered in the target module is not deposited inside the process chamber except for the substrate, And a deposition material deposition unit for depositing the deposition material.

Description

[0001] APPARATUS TO SPUTTER [0002]

The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus that prevents a deposition material sputtered in a target module from being deposited inside a process chamber other than a substrate.

Flat displays such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel) and OLED (Organic Light Emitting Diodes) and semiconductors are manufactured through various processes such as thin film deposition and etching.

Among various processes, the thin film deposition process is largely divided into two according to the important principle of the deposition.

One is Chemical Vapor Deposition (CVD), and the other is Physical Vapor Deposition (PVD), which is widely used in accordance with current process characteristics.

The chemical vapor deposition is a method of plasma-forming by an external high-frequency power source so that silicon compound ions having high energy are ejected from the showerhead through the electrode and deposited on the substrate.

In contrast, physical vapor deposition, which can be represented by a sputtering apparatus, is a method in which enough energy is applied to ions in a plasma to collide with a target, and then sputtered target atoms are deposited on the substrate.

Of course, in addition to the above-described sputtering method, physical vapor deposition may be performed by a method such as E-Beam, Evaporation, Thermal Evaporation, etc. Hereinafter, a sputtering method Will be referred to as physical vapor deposition.

A conventional sputtering apparatus includes a process chamber for forming a deposition space for a substrate, a target module for providing a deposition material toward a substrate placed in a deposition position inside the process chamber, and a power supply unit for supplying power to the target module do.

At this time, the deposition material to be stuffered in the target module is deposited not only on the substrate but also on the inner wall of the process chamber, and the deposition material deposited on the inner wall of the process chamber or the like becomes a particle which causes contamination of the entire process chamber including the target module. There is a problem that the thin film deposited on the substrate has an adverse effect of contaminating the thin film.

Therefore, research is needed to prevent the deposition material sputtered in the target module from being deposited inside the process chamber other than the substrate.

[Patent Document 1] Korean Patent Laid-Open No. 10-2007-0021919 (Applied Chemistry Co., Ltd., Alban) 2007.02.23.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a semiconductor device, which can prevent evaporation material deposited in a target module from being deposited inside a process chamber other than a substrate, And a sputtering apparatus.

According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing chamber for forming a deposition space for a substrate; A target module disposed within the process chamber, the target module providing deposition material to the substrate; And a deposition prevention module disposed within the process chamber and spaced from the target module to prevent the deposition material sputtered in the target module from being deposited inside the process chamber except for the substrate, Prevention module may be provided in the form of a mesh having a plurality of voids and may be provided with a sputtering apparatus including a deposition material deposition unit on which the deposition material is deposited

The deposition prevention module may include an opening formed at a position opposite to the substrate so as to be spaced apart from the target module in the process chamber and sputtering the deposition material toward the substrate disposed opposite to the target module The deposition material deposition unit may further include a support frame, and the deposition material deposition unit may be coupled to a surface of the support frame opposite to the target module.

One side of the support frame includes a first sub-frame surrounding the side of the target module; And a second sub-frame detachably coupled to the first sub-frame.

The support frame may be coupled to one end of the first sub-frame so that the second sub-frame protrudes toward the target module so that one end of the support frame is bent inward.

The deposition material deposition unit may include: a first deposition material deposition member detachably coupled to a surface of the first subframe opposite to the target module; And a second deposition material deposition member detachably coupled to a surface of the second sub-frame opposite to the target module.

The deposition prevention module may further include a coupling member detachably coupling the deposition material deposition unit to the support frame.

Wherein the coupling member includes: a plurality of pin members coupled to the first subframe through the first deposition material depositing member; And a plurality of clip members coupling the second sub-frame and the second deposition material deposition member.

The deposition prevention module may further include a heating unit installed on the support frame for heating the deposition material deposition unit.

The heating unit may include at least one heat wire provided in the support frame; A sensor unit installed in the support frame for measuring a temperature of the deposition material deposition unit; And a heat ray control unit installed in the support frame and controlling the at least one heat ray based on the temperature measured by the sensor unit to maintain the evaporation material deposition unit at a predetermined temperature.

The deposition module may further include a shield portion provided adjacent to the target module so that the deposition material sputtered in the target module is sputtered toward the substrate. The deposition prevention module may be disposed apart from the shield portion.

The target module comprising: a target for providing an evaporation material to the substrate; A backing plate provided on one side of the target; And a magnet unit provided on one side of the backing plate.

A substrate support disposed within the process chamber to support the substrate; And a heater disposed inside the process chamber for heating the substrate on the substrate support.

Embodiments of the present invention include a mesh type deposition prevention module having a plurality of voids to prevent the deposition material sputtered in the target module from being deposited inside the process chamber other than the substrate, The contaminated thin film can be prevented from being contaminated.

FIG. 1 is a configuration diagram showing a sputtering apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view showing a deposition preventing module according to an embodiment of the present invention in the sputtering apparatus of FIG. 1; FIG.
3 is a cross-sectional view showing a deposition prevention module according to an AA cross section in Fig.
4 is a perspective view illustrating a state in which a first deposition material deposition member is coupled to a first subframe according to an embodiment of the present invention.
5 is a perspective view illustrating a state in which a second deposition material deposition member is coupled to a second subframe according to an embodiment of the present invention.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

The substrate to be described below may be a flat panel display substrate such as a liquid crystal display (LCD), a plasma display panel (PDP), or an organic light emitting diode (OLED), a solar cell substrate, or a semiconductor wafer substrate.

2 is a perspective view of a deposition preventing module according to an embodiment of the present invention in the sputtering apparatus of FIG. 1, and FIG. 3 is a cross-sectional view of the sputtering apparatus according to an embodiment of the present invention. 4 is a perspective view illustrating a state in which a first deposition material deposition member is coupled to a first subframe according to an embodiment of the present invention, FIG. 5 is a cross- FIG. 4 is a perspective view illustrating a state in which a second deposition material deposition member is coupled to a second subframe according to an embodiment of the present invention. FIG.

1 to 5, a sputtering apparatus 100 according to an embodiment of the present invention includes a process chamber 130 for forming a deposition space for a substrate 110, A plasma generating unit 200 having a substrate supporting part 150 for supporting a substrate 110 and a target module 210 disposed inside the processing chamber 130 and providing a deposition material to the substrate 110, And a deposition material disposed in the process chamber 130 so as to be spaced apart from the target module 210 and being sputtered in the target module 210 is prevented from being deposited inside the process chamber 130 except for the substrate 110 And a deposition prevention module 300.

Referring to FIG. 1, the process chamber 130 serves to provide a space for performing a deposition process for the substrate 110.

The shape of the process chamber 130 may be changed according to the type and shape of the substrate 110. The shape of the process chamber 130 may be changed depending on the type and shape of the substrate 110. In this case, .

The process chamber 130 is sealed and kept in a vacuum state during the deposition process.

For this purpose, a vacuum pump 131 is provided in a lower region of the process chamber 130. When vacuum pressure is generated from the vacuum pump 131, the inside of the process chamber 130 can maintain a high vacuum state.

In addition, a reaction gas supply unit 133 for supplying argon, oxygen gas, or the like as a reaction gas is provided in a lower region of the process chamber 130.

A substrate inlet 135 for introducing the substrate 110 into the process chamber 130 is formed at one side of the process chamber 130 and a substrate inlet 135 for introducing the substrate 110 from the process chamber 130 is formed at the other side of the process chamber 130. A substrate outlet 137 through which the substrate 110 is drawn is formed. A separate gate valve (not shown) may be provided in the substrate inlet 135 and the substrate outlet 137.

The substrate support 150 is disposed inside the process chamber 130 to support the substrate 110.

The substrate support 150 serves to transfer the substrate 110, which has been drawn into the substrate inlet 135, to the substrate outlet 137.

Referring to FIG. 1, the substrate support 150 may be formed of electrostatic chucks or mechanical chucks as required, although the rollers are applied.

In general, since the inside of the process chamber 130 is maintained at a high temperature, it is preferable that the substrate supporting part 150 is made of a material excellent in heat resistance and durability.

The substrate supporting unit 150 horizontally supports the substrate 110 that is drawn into the process chamber 130 and simultaneously transports the substrate 110 in a horizontal direction, 110 may be vertically supported.

A heater 138 for heating a deposition surface of the substrate 10 placed on the substrate supporting part 150 is provided in a lower region of the substrate supporting part 150.

The heater 138 serves to heat the substrate 10 to several hundred degrees or more so that the deposition material provided in the target module 210 can be well deposited on the substrate 110.

The heater 138 may have a size similar to or larger than the size of the substrate 110 so that the entire surface of the substrate 110 can be evenly and rapidly heated.

At least one plasma generating unit 200 may be disposed inside the process chamber 130 and the plasma generating unit 200 may serve to provide plasma generating and deposition materials to the substrate 110 .

The plasma generating unit 200 includes a target module 210 disposed inside the process chamber 130 and providing an evaporation material to the substrate 110, a ground unit 230 electrically separated from the target module 210, An insulating part 250 provided between the target module 210 and the grounding part 230 and an insulating part 250 provided adjacent to the target module 210 so that the evaporation material sputtered in the target module 210 is sputtered toward the substrate 110 A shield unit 290 and a power supply unit 270 provided on one side of the target module 210 to supply power to the target module 210.

In this embodiment, the target module 210 generates plasma when power is supplied by the power supply unit 270, and forms a thin film on the substrate 110 by sputtering the deposition material in the target 211, which will be described later It plays a role.

Generally, the target module 210 forms a cathode and the region of the substrate 110 forms an anode.

The target module 210 includes a target 211 for providing an evaporation material to the substrate 110, a backing plate 213 provided at one side of the target 211, a magnet unit (not shown) provided at one side of the backing plate 213, 214).

The target 211 serves as a source of sputter that provides a deposition material toward the substrate 110.

The target 211 may be made of a low melting point material (indium, silver, etc.) to have a high deposition rate, but is not limited thereto.

In this embodiment, the target 211 is provided as a flat type target 211, that is, a flat type target 211 that provides a deposition material toward the substrate 110 in the lower region at a fixed corresponding position, But may be provided as a rotatable target.

Then, the target 211 is bonded to one surface of the backing plate 213 facing the substrate 110.

The target 211 and the backing plate 213 are joined to each other by placing the target 211 and the backing plate 213 in a predetermined shape on a heating plate and heating the target 211 and the backing plate 213 213 are coated with a bonding material, and then the bonding material is naturally cooled in a state in which the bonding materials are in contact with each other.

On the other hand, the backing plate 213 is electrically connected to the power supply unit 270 to supply power to the target 211.

The power supply unit 270 supplies power to the target module 210, that is, the target 211, to generate a high-density plasma.

In this embodiment, the power supply unit 270 uses any one of DC power, DC pulse power, RF power, LF power, Microwave power, and a combination thereof.

Since the high density plasma is controlled by the power supplied from the power supply unit 270 and the high speed sputtering occurs at the target 211 by the high density plasma, the deposition rate for depositing the thin film on the substrate 110 can be improved, Can be improved.

1, the cooling water inflow pipe 217 and the cooling water discharge pipe 219 for cooling the target area 211 are connected to the inside of the backing plate 213. [

The magnet unit 214 is disposed on one side of the target 211, that is, inside the backing plate 213, and serves to generate a magnetic field for deposition between the magnet 211 and the substrate 110.

The magnet unit 214 includes a plurality of magnets 215 and 216 movable in at least one direction, a base pole plate (not shown) forming a base for the plurality of magnets 215 and 216, (Not shown) that individually support the pawls 215 and 216, respectively.

The plurality of magnets 215 and 216 include a central magnet 215 disposed in the central region of the base pole plate and an outer magnet 216 disposed at the outer periphery of the central magnet 215.

The plurality of magnets 215 and 216 form a closed loop magnetic flux in front of the target 211 and capture electrons ionized in front of the target 211 and secondary electrons generated by sputtering, Increase electron density in the front to increase plasma density.

After the target module 210 is formed by combining the target 211, the backing plate 213 and the magnet unit 214, the target module 210 is formed to stably generate the plasma using the target module 210. [ And a grounding part 230 electrically separated from the grounding part 230.

An insulating portion 250 is provided between the target module 210 and the grounding portion 230, that is, between the backing plate 213 and the grounding portion 230.

The shield portion 290 is provided adjacent to the target module 210 and particularly to the target 211 so as to prevent the deposition material sputtered in the target 211 from being sputtered in a direction other than the substrate 110.

Meanwhile, the amount of the evaporation material to be sputtered can be adjusted by adjusting the size of the opening of the shield part 290 through which the evaporation material passes.

In this embodiment, the shield portion 290 is provided adjacent to the side of the target module 210 including the target 211 and the backing plate 213, and the shield portion 290 is disposed adjacent to the side of the target module 210 And are spaced apart from each other by a predetermined distance.

One end of the shield portion 290 is electrically connected to the ground portion 230.

2 through 5, the deposition prevention module 300 is disposed in the process chamber 130 so as to be spaced apart from the target module 210 and is separated from the target module 210, separately from the shield portion 290, And serves to prevent the deposition material to be sputtered from being deposited inside the process chamber 130 except for the substrate 110.

The deposition preventing module 300 includes a deposition material deposition unit 310 that is formed in a mesh type having a plurality of voids 311 and on which a deposition material is deposited, A support frame 330 spaced apart from the substrate 210 and having an opening 335 at a position opposite to the substrate 110 so as to be sputtered in the direction of the substrate 110 disposed opposite to the target module 210; A joining member 351 and 353 for joining the deposition material 310 and the support frame 330 and a heating unit 370 for heating the deposition material 310 in the support frame 330.

The deposition prevention module 300 is disposed in the process chamber 130 so as to surround the target module 210. That is, the deposition preventing module 300 is provided separately from the shield portion 290 and is disposed apart from the shield portion 290.

The support frame 330 serves to support the deposition material deposition unit 310 by being spaced apart from the target module 210, particularly the shield unit 290, inside the process chamber 130.

The support frame 330 is formed to surround the target module 210.

In this embodiment, when the target module 210 is formed as a flat type, the supporting frame 330 may be formed to surround the planar type target module 210, The support frame 330 may be formed to surround the rotatable target module 210 even when the rotatable target module 210 is formed.

1 and 2, one side of the support frame 330 that surrounds the target module 210 includes a first sub-frame 331 surrounding the side of the target module 210, And a second sub-frame 333 detachably coupled to the frame 331.

The first sub-frame 331 serves to support the deposition material deposition unit 310 and the second sub-frame 333. The upper end of the first sub-frame 331 is connected to the grounding unit 230 located at the upper portion of the process chamber 130, and the lower end is located at the lower portion of the target module 210.

The second sub-frame 333 may be detachably connected to the lower end of the first sub-frame 331.

This is because the deposition material sputtered in the target module 210 is mostly deposited in the second subframe 333 located under the target module 210 by the shield portion 290, The second subframe 333 itself can be freely replaced when it is deposited on the second subframe 333 or the second deposition material deposition member 315 detachably coupled to the second subframe 333, This is to improve convenience.

The support frame 330 has an opening 335 that allows the deposition material sputtered in the target module 210 to be sputtered toward the substrate 110.

The second sub-frame 333 is coupled to one end of the first sub-frame 331 so as to protrude toward the target module 210 so that one end of the support frame 330 is bent inward.

The second sub-frame 333 is formed to be shorter than or equal to a length reaching a vertically downward extension line of the target module 210 at the lower end of the first sub-frame 331.

In the present embodiment, the second sub-frame 333 is detachably connected to the lower end of the first sub-frame 331. However, the first sub-frame 331 and the second sub- May be integrally formed.

The deposition material deposition unit 310 deposits the deposition material sputtered in the target module 210 inside the process chamber 130 except for the substrate 110 to prevent the generation of particles which are pollution sources that contaminate the thin film on the substrate 110. [ .

That is, the deposition material deposition unit 310 deposits the deposition material sputtered in a direction other than the direction of the substrate 110, thereby preventing deposition of the deposition material into the process chamber 130 except for the substrate 110.

In this embodiment, the deposition material deposition unit 310 is formed as a mesh type having a plurality of apertures 311 in order to maximize the surface area on which the deposition material is deposited.

A separate wire (not shown) may be disposed in the plurality of voids 311 to further increase the surface area on which the deposition material is deposited. In this embodiment, the void 311 has a thickness of 50 to 100 micrometers (μm), and the deposition material deposition unit 310 may be made of stainless steel.

The deposition material deposition unit 310 described above is coupled to the support frame 330 disposed at a predetermined distance from the target module 210, particularly, the shield unit 290.

That is, the deposition material deposition unit 310 may be formed on the surface of the support frame 330 opposite to the target module 210, for example, on the inner side of the support frame 330 so that the deposition material sputtered in the target module 210 may be directly deposited. Respectively.

The deposition material deposition unit 310 and the target module 210 are also disposed inside the process chamber 130 because the deposition material deposition unit 310 is coupled to the inner surface of the support frame 330.

The deposition material deposition unit 310 includes a first deposition material deposition member 313 detachably coupled to a surface of the first subframe 331 facing the target module 210, And a second deposition material deposition member 315 detachably coupled to a surface of the second deposition material deposition chamber 333 opposite to the target module 210.

The first deposition material deposition member 313 and the second deposition material deposition member 315 may be formed as a mesh type having a plurality of voids 311 as described above so that the deposition material sputtered in the target module 210 is deposited Thereby maximizing the surface area.

4 and 5, the deposition material deposition unit 310 is detachably coupled to the support frame 330 by the engagement members 351 and 353.

The coupling members 351 and 353 include a plurality of pin members 351 penetrating the first deposition material deposition member 313 and coupled to one surface of the first subframe 331, And a plurality of clip members 353 for coupling the material depositing member 315.

As shown in FIG. 4, a plurality of pin members 351 are provided on the first deposition material depositing member 313 so as to be spaced apart from each other by a predetermined distance.

One end of the pin member 351 is coupled to a groove portion (not shown) formed in the first subframe 331 through the first deposition material deposition member 313 and the other end is connected to the first deposition material deposition member 313, The first sub-frame 331 is formed to be in close contact with the first sub-frame 331.

That is, in this embodiment, one end of the pin member 351 is formed in the shape of a circular protrusion so as to penetrate through the first deposition material depositing member 313, and the other end is formed as a first deposition material depositing member 313, Is formed in a plate shape so as to be in close contact with the sub-frame (331).

As shown in FIG. 5, a plurality of clip members 353 are provided on the second evaporation material depositing member 315 so as to be spaced apart from each other by a predetermined distance.

The clip member 353 couples the second subframe 333 and the second deposition material deposition member 315 with the second subframe 333 and the second deposition material deposition member 315 held together .

As described above, when the evaporation material deposition unit 310 is installed on the support frame 330 and the evaporation material deposition process is repeated on the substrate 110, the evaporation material deposition unit 310 may be formed by a sputtering process It is thermally expanded and contracted by repeated heating and cooling to be subjected to thermal stress.

There is a problem in that when the deposition material deposition unit 310 is subjected to thermal stress, the deposition material deposited on the mesh type deposition material deposition unit 310 is peeled off and the thin film deposited on the substrate 110 is contaminated.

Therefore, in this embodiment, the deposition unit 310 further includes a heating unit 370 that maintains the temperature of the deposition material deposition unit 310 constant so that the deposition material deposition unit 310 is not subjected to thermal stress.

3, the heating unit 370 includes at least one heat ray 371 installed in the support frame 330 and a sensor unit 350 installed in the support frame 330 for measuring the temperature of the deposition material deposition unit 310, (371) for controlling at least one heat ray (371) based on the temperature measured by the sensor unit (373) so as to maintain the deposition material deposition unit (310) at a predetermined temperature, the heat ray control unit (Not shown).

The heating line 371 transfers heat to the support frame 330 and the deposition material deposition unit 310 in sequence so that the deposition material deposition unit 310 is expanded and contracted by repeated heating and cooling during the sputtering process And serves to heat the deposition material deposition unit 310 to remove thermal stress.

At least one heat line 371 is provided in the second sub-frame 333 in which most of the deposition material sputtered in the target module 210 is deposited. Also, at least one heat ray 371 is preferably provided in the first sub-frame 331 as well.

In order to sense the temperatures of the first deposition material deposition member 313 and the second deposition material deposition member 315 by the heating of the heat line 371, the first sub frame 331 and the second sub frame 333 At least one or more thermal sensors 373 contacting the first and second deposition material depositing members 313 and 315 are provided.

The temperature data for the first sub-frame 331 and the second sub-frame 333 measured by the heat sensor 373 is transmitted to a heating wire control unit (not shown), and the heating wire control unit And controls one or more heat lines 371 to control the temperatures of the first deposition material deposition member 313 and the second deposition material deposition member 315 to be constant.

Thus, the heating portion 370 removes the thermal stress applied to the first and second deposition material depositing members 313 and 315 of the mesh type during the sputtering process to form the first deposition material deposition member 313, And the deposition material deposited on the second deposition material deposition member 315 are not scattered over a long period of time and the particles due to the scattering of the deposition material can be prevented from contaminating the substrate 110. [

In addition, since particles can be prevented from scattering over a long period of time, time for removing particles in the process chamber 130 can be shortened, and the sputtering process operation time can be improved.

The operation of the deposition prevention module 300 in the sputtering apparatus 100 according to an embodiment of the present invention will now be described.

The deposition material sputtered in the target module 210 is first guided to be sputtered toward the substrate 110 by the shield portion 290 when sputtering the substrate 110 in the process chamber 130 , And is prevented from being deposited inside the process chamber 130 except for the substrate 110 by the deposition prevention module 300 in the second place.

At this time, the deposition prevention module 300 disposes the support frame 330 so as to enclose the target module 210 in the process chamber 130.

The deposition material deposition unit 310, on which the deposition material is deposited, is coupled to the surface of the support frame 330 facing the target module 210.

At this time, the deposition material deposition unit 310 is formed as a mesh type having a plurality of voids 311, and a deposition material sputtered in the target module 210 is deposited.

Meanwhile, when the evaporation material deposition unit 310 expands and contracts due to heating and cooling according to the sputtering process, the deposited deposition material may scatter and contaminate the substrate 110, so that during the sputtering process, The heating frame 370 for heating the deposition material 310 is installed in the support frame 330 so that the temperature of the deposition unit 310 can be maintained constant.

As described above, in this embodiment, deposition material sputtered in the target module 210 by the deposition prevention module 300 can be prevented from being deposited inside the process chamber 130 except for the substrate 110.

Therefore, it is possible to prevent the thin film deposited on the substrate 110 from being contaminated by the deposition material deposited in the process chamber 130 as in the conventional art, It is possible to reduce the time required to remove the phosphor particles, thereby improving the sputtering process time as a whole.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

100: sputtering apparatus 110: substrate
130: Process chamber 131: Vacuum pump
138: heater 150:
200: plasma generating unit 210: target module
211: target 213: backing plate
214: Magnet unit 290: Shield part
300: Deposition prevention module 310: Deposition material deposition unit
311: Pore 313: First deposition material deposition member
315: second deposition material deposition member 330: support frame
331: first sub-frame 333: second sub-frame
351: pin member 353: clip member
370: Heating part 371: Heat line
373: Thermal sensor

Claims (12)

A target module disposed within a process chamber forming a deposition space for a substrate, the target module providing deposition material to the substrate;
A shield portion provided adjacent to the target module; And
Wherein the shielding part is provided separately from the outside of the shield part in the process chamber independently from the shield part, and the evaporation preventing material prevents the evaporation material sputtered in the target module from being deposited inside the process chamber except for the substrate Module,
The deposition prevention module includes:
A first sub-frame surrounding the side of the target module, and a second sub-frame detachably coupled to the first sub-frame and protruding toward the target module, frame;
A first deposition material deposition member formed in a mesh type and having a plurality of voids detachably coupled to surfaces of the first and second subframes opposite to the target module, A deposition material deposition unit having a deposition material;
At least one heat line provided in each of the first sub frame and the second sub frame and a plurality of heating lines provided in the first sub frame and the second sub frame, A heating unit connected to the heat line and the sensor unit and having a heating wire control unit for maintaining the first deposition material deposition member and the second deposition material deposition member at a constant temperature;
Wherein the first deposition material depositing member is formed in a circular protrusion shape and is coupled to the first sub frame through the first deposition material depositing member and the other end is formed in a plate shape so that the first deposition material depositing member is in close contact with the first sub frame A plurality of pin members; And
And a plurality of clip members for coupling the second deposition material deposition member and the second subframe to each other while holding the second deposition material deposition member and the second subframe together. delete delete delete delete delete delete delete delete delete The method according to claim 1,
The target module includes:
A target for providing an evaporation material to the substrate;
A backing plate provided on one side of the target; And
And a magnet unit provided on one side of the backing plate. The method according to claim 1,
A substrate support disposed within the process chamber to support the substrate; And
And a heater disposed within the process chamber for heating the substrate on the substrate support.

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