KR101385590B1 - Apparatus to sputter - Google Patents

Abstract

A sputtering apparatus is disclosed. Sputtering apparatus according to an embodiment of the present invention, the chamber for forming a deposition space for the substrate; And a rotatable cathode rotatably provided within the chamber, the rotatable cathode providing the deposition material towards the substrate, the rotatable cathode comprising: a target for providing the deposition material towards the substrate; A cathode backing tube having a target provided on an outer circumferential surface thereof; A target cooling unit provided inside the cathode backing tube to circulate the cooling water to cool the target through indirect contact with the target; And a target cooling efficiency improving unit provided in the cathode backing tube to increase the cooling water in contact with the cathode backing tube to increase the cooling efficiency for the target.

Description

[0001] APPARATUS TO SPUTTER [0002]

The present invention relates to a sputter device, and more particularly, to a sputter device that can improve the cooling efficiency of the target.

Flat displays such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel) and OLED (Organic Light Emitting Diodes) and semiconductors are manufactured through various processes such as thin film deposition and etching.

Among various processes, the thin film deposition process is largely divided into two according to the important principle of the deposition.

One is Chemical Vapor Deposition (CVD), and the other is Physical Vapor Deposition (PVD), which is widely used in accordance with current process characteristics.

The chemical vapor deposition is a method of plasma-forming by an external high-frequency power source so that silicon compound ions having high energy are ejected from the showerhead through the electrode and deposited on the substrate.

In contrast, physical vapor deposition, which can be represented by a sputtering apparatus, is a method in which enough energy is applied to ions in a plasma to collide with a target, and then sputtered target atoms are deposited on the substrate.

Of course, in addition to the above-described sputtering method, physical vapor deposition may be performed by a method such as E-Beam, Evaporation, Thermal Evaporation, etc. Hereinafter, a sputtering method Will be referred to as physical vapor deposition.

Conventional sputtering apparatuses include a cathode having a chamber in which a sputtering process is performed, a target as a sputtering source for providing a deposition material toward a substrate placed in a deposition position in the chamber, and a cathode backing tube in which the target is provided on an outer wall. It includes.

The target is provided on the outer wall of the cathode backing tube. When the cathode backing tube becomes negative voltage by power supplied from the outside, the target connected to the cathode backing tube is sputtered and thin film deposition is performed on the substrate.

The cathode of the conventional sputtering device is mainly a cathode of the planar form, but in recent years, the use of a rotating cathode has been gradually increased to develop a cathode capable of rotating the 360 ° around the axis of rotation.

On the other hand, in the sputtering device, high temperature heat is generated in the target portion where the plasma is directly hit by the high energy of the charged particles during thin film deposition. This heat causes a rise in the temperature of the target, and if sufficient cooling is not achieved, the target may melt or the nonuniformity of the target surface may increase, resulting in a decrease in film uniformity.

However, high power must be applied to maintain a high film deposition rate in a short process time. Therefore, research is needed to improve the cooling efficiency of the target to prevent the target from melting due to the temperature rise of the target, which may occur due to high power application, or the uniformity of the target.

[Document 1] KR 10-2006-0111896 A (Bekaert Advanced Coatings) 2006.10.30.

Accordingly, the technical problem to be solved by the present invention is to provide a sputtering device that can apply high power by improving the cooling efficiency of the target, thereby improving productivity and deposition quality according to an increase in the thin film deposition rate.

According to an aspect of the invention, the chamber for forming a deposition space for the substrate; And a rotatable cathode rotatably provided within the chamber, the rotatable cathode providing a deposition material toward the substrate, wherein the rotatable cathode comprises: a target for providing a deposition material toward the substrate; A cathode backing tube having the target provided on an outer circumferential surface thereof; A target cooling unit provided inside the cathode backing tube to circulate cooling water to cool the target through indirect contact with the target; And a target cooling efficiency improving unit provided in the cathode backing tube and increasing the area in which the cooling water contacts the cathode backing tube to increase the cooling efficiency for the target.

The target cooling unit may include a first cooling water flow path provided at a center of the cathode backing tube; And a second cooling water flow passage communicating with the first cooling water flow passage, the second cooling water flow passage provided adjacent to an inner circumferential surface of the cathode backing tube along a longitudinal direction of the cathode backing tube, wherein the target cooling efficiency improving unit is connected to the cathode backing tube. It may be provided to be spaced apart from each other, and may include a plurality of uneven parts in contact with the cooling water moving along the second cooling water flow path.

The plurality of uneven parts may include a plurality of grooves provided to be spaced apart from each other on an inner circumferential surface of the cathode backing tube.

The plurality of uneven parts are provided to be spaced apart from each other on the inner circumferential surface of the cathode backing tube, a plurality of grooves formed by filling a thermally conductive material with high thermal conductivity in a plurality of holes through the inner circumferential surface and the outer circumferential surface of the cathode backing tube It may include.

The thermally conductive material may be any one of gold, silver, copper, and alloy materials in combination thereof.

The target cooling efficiency improving unit may be provided to be spaced apart from each other on the outer circumferential surface of the cathode backing tube, and may further include a plurality of protrusions in contact with the target.

The target cooling efficiency improving unit may be provided to be spaced apart from each other in the cathode backing tube, the cooling water may further include a plurality of holes through the inner circumferential surface and the outer circumferential surface of the cathode backing tube in direct contact with the inner circumferential surface of the target. .

The rotatable cathode may further include a heat pipe module provided in the cathode backing tube to cool the target.

The heat pipe module may include a plurality of heat pipes respectively inserted into a plurality of grooves formed along a length direction of the cathode backing tube; And a heat sink coupled to one side of the heat pipe.

The groove portion may be formed on at least one of an inner circumferential surface and an outer circumferential surface of the cathode backing tube.

The rotatable cathode is connected to one end of the cathode backing tube and communicates with the target cooling unit to supply the cooling water to the target cooling unit and at the same time the end block into which the cooling water discharged from the target cooling unit flows. It further includes, the heat sink may be disposed inside the end block.

The rotatable cathode may further include a heat sink cooling unit provided inside the end block to circulate cooling water to cool the heat sink.

The heat sink cooling unit is provided to communicate with the inside of the end block in which the heat sink is disposed, the coolant inlet through which the coolant flows; And a cooling water discharge port communicating with the cooling water inflow path and discharged after the cooling water cools the heat sink.

Embodiments of the present invention, by cooling the target using the target cooling unit and the target cooling efficiency improving unit provided in the cathode backing tube, it is possible to apply a high power can improve the productivity and deposition quality according to the increase in the thin film deposition rate. .

1 is a structural diagram schematically showing a sputtering apparatus according to the present invention.
2 is a cross-sectional view showing the AA cross section in Fig.
3 is an enlarged view of a portion B of FIG. 2, and is a cross-sectional view illustrating a plurality of uneven parts according to an exemplary embodiment of the present invention.
4 is a cross-sectional view illustrating a DD cross section of FIG. 3.
5 is an enlarged view of a portion B of FIG. 2 and is a cross-sectional view illustrating a plurality of uneven parts according to another exemplary embodiment of the present disclosure.
FIG. 6 is a cross-sectional view illustrating the EE cross section of FIG. 5.
FIG. 7 is an enlarged view of a portion B of FIG. 2, and is a cross-sectional view illustrating a plurality of uneven parts according to another exemplary embodiment of the present disclosure.
8 is a cross-sectional view illustrating a cross section taken along line FF in FIG. 7.
9 is an enlarged view of a portion B of FIG. 2 and is a cross-sectional view illustrating a state in which a plurality of holes are formed in the cathode backing tube.
10 is a cross-sectional view illustrating a GG cross section in FIG. 9.
FIG. 11 is an enlarged cross-sectional view illustrating part C of FIG. 2.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

The substrate to be described below may be a flat panel display substrate such as a liquid crystal display (LCD), a plasma display panel (PDP), or an organic light emitting diode (OLED), a solar cell substrate, or a semiconductor wafer substrate.

Hereinafter, a sputtering apparatus according to the present invention will be described.

1 is a schematic structural view showing a sputtering apparatus according to the present invention, Figure 2 is a cross-sectional view showing a cross-section AA of Figure 1, Figure 3 is an enlarged view of the portion B of Figure 2 according to an embodiment of the present invention 4 is a cross-sectional view illustrating a DD cross section of FIG. 3, FIG. 5 is an enlarged view of a portion B of FIG. 2, and a cross-sectional view showing a plurality of uneven parts according to another embodiment of the present invention. 5 is a cross-sectional view illustrating the EE cross section of FIG. 5, FIG. 7 is an enlarged view of a portion B of FIG. 2, and is a cross-sectional view illustrating a plurality of uneven parts according to another exemplary embodiment of the present invention, and FIG. 9 is a cross-sectional view illustrating a state in which a plurality of holes are formed in the cathode backing tube as the enlarged portion B of FIG. 2, FIG. 10 is a cross-sectional view illustrating a GG cross section of FIG. 9, and FIG. 11 is a portion C of FIG. 2. Indicate It is an enlarged cross-sectional view.

1 to 11, a sputtering apparatus according to the present invention includes a chamber 100 for forming a deposition space for a substrate 10, and a substrate transfer support part 200 for supporting the substrate 10 to be transportable. And a rotatable cathode 300 provided inside the chamber 100 to provide a deposition material toward the substrate 10 and provided on one side of the rotatable cathode 300 to supply power to the rotatable cathode 300. A power supply 410 and an electrical connection part (not shown) provided between the rotatable cathode 300 and the power supply 410 to electrically connect the rotatable cathode 300 and the power supply 410. .

Referring to FIG. 1, the chamber 100 forms a deposition space for the substrate 10, and the inside of the chamber 100 is sealed and maintained in a vacuum state during the deposition process. To this end, a gate valve 110 is provided in the lower region of the chamber 100, and a vacuum pump 120 is provided in the gate valve 110 region.

When a vacuum pressure is generated from the vacuum pump 120 while the gate valve 110 is opened, the interior of the chambers 100 and 100 may maintain a high vacuum state.

A substrate inlet 130 through which the substrate 10 is introduced into the chamber 100 is formed at one side of the chamber 100, and the substrate 10 from the chamber 100 is drawn out at the other side of the chamber 100. The substrate outlet 140 is formed. Separate gate valves (not shown) may also be provided at the substrate inlet 130 and the substrate outlet 140.

In the upper region of the chamber 100, a cover 150 coupled to the chamber 100 is provided to surround the region of the rotatable cathode 300 provided with the target 310 and the cathode backing tube 320 from the outside.

In the present embodiment, two rotatable cathodes 300 are provided in the chamber 100, but the present invention is not limited thereto, and one rotatable cathode 300 may be provided. In this case, the cover 150 has a shape that rises to the top of the chamber 100 in two regions in which the rotatable cathode 300 is located. In this case, the covers 150 are hermetically connected by the lids 160.

The substrate transfer support part 200 is disposed in the central region of the chamber 100 to support the substrate 10 and to transfer the substrate 10 introduced into the substrate inlet 130 to the substrate outlet 140. .

The substrate transfer support 200 may be applied by a roller. In view of the fact that the inside of the chamber 100 maintains a high temperature, the substrate transfer support 200 may be made of a material having excellent heat resistance and durability.

In the lower region of the substrate transfer support 200, a heater 210 is provided to heat the deposition surface of the substrate 10 on the substrate transfer support 200. The heater 210 serves to heat the substrate 10 to a few hundred degrees or more so that the deposition material provided from the target 310 can be well deposited on the substrate 10.

The heater 210 may have a size that is similar to or larger than the size of the substrate 10 so as to evenly and rapidly heat the entire surface of the substrate 10.

The rotatable cathode 300 is provided in the upper region of the chamber 100, in particular, the target 310 provided in the rotatable cathode 300 faces the substrate 10 placed in the deposition position on the substrate transfer support 200. It serves as a sputter source for providing deposition material.

1 to 11, the rotatable cathode 300 includes a target 310 providing a deposition material toward the substrate 10, a cathode backing tube 320 provided on the outer circumferential surface of the target 310, and A magnetron 330 provided inside the cathode backing tube 320 to generate a magnetic field, a cathode rotating shaft (not shown) connected to one end of the cathode backing tube 320 to rotate the cathode backing tube 320, and a cathode. A coupling member (not shown) provided between the backing tube 320 and the cathode rotating shaft 340, and coupled to the cathode backing tube 320 and the cathode rotating shaft 340, and connected to the cathode rotating shaft 340, and having a cathode rotating shaft 340. ) And a rotational power providing unit (not shown) that provides rotational power for rotating the cathode backing tube 320 and the cathode backing tube 320 to circulate the coolant to indirect contact with the target 310. Target cooling unit 350 for cooling the target 310 through the, and the An end block 370 connected to one end of the sword backing tube 320 to communicate with the target cooling unit 350 to supply the cooling water to the target cooling unit 350 and at the same time the cooling water discharged from the target cooling unit 350 is introduced. And a target cooling efficiency improving unit 360 provided at the cathode backing tube 320 to increase the cooling water in contact with the cathode backing tube 320 to increase the cooling efficiency of the target 310, and the cathode backing. The heat pipe module 380 provided in the tube 320 to cool the target 310 and the heat block module 380 provided in the end block 370 to circulate the coolant to cool the heat sink 383 of the heat pipe module 380. A heat sink cooling unit 390 is included.

Typically, the region of the target 310 and the magnetron 330 form a cathode, and the region of the substrate 10 forms an anode.

In the present embodiment, since the target 310 is provided in the rotatable cathode 300 provided inside the chamber 100, the rotatable cathode 300 also forms a cathode, the rotatable cathode 300, the target 310, and the magnetron. When cathodes are formed in all of the 330 regions, the target 310 provides a deposition material toward the substrate 10 in the lower region.

In this embodiment, the target 310 may be made of a low melting point target (eg, indium, silver, etc.) to have a high deposition rate, but is not limited thereto.

In addition, the target 310 is formed to surround the outer circumferential surface of the cylindrical cathode backing tube 320 to be described later. In this case, the target 310 is formed in a cylindrical shape on the outer circumferential surface of the cathode backing tube 320 to correspond to the cylindrical shape of the cathode backing tube 320.

The magnetron 330 is provided inside the cathode backing tube 320 to generate a magnetic field. The target 310 is provided on the outer circumferential surface of the cathode backing tube 320 while the magnetron 330 is provided inside the cathode backing tube 320 to generate a magnetic field for deposition between the substrate 10 and the substrate 10.

The cathode backing tube 320 may be formed in a cylindrical shape having a size sufficient to form a sufficient space therein surrounding the magnetron 330, but is not limited thereto and may be formed in various shapes.

The cathode rotating shaft (not shown) for rotating the cathode backing tube 320 is formed in a cylindrical shape corresponding to the cathode backing tube 320 so as to be connected to one end of the cathode backing tube 320.

Further, a coupling member (not shown) is further provided between the cathode backing tube 320 and the cathode rotating shaft, and the coupling member couples the cathode backing tube 320 to the cathode rotating shaft.

Only one end of the cathode rotating shaft connected to the cathode backing tube 320 by the coupling member is accommodated in the chamber 100, and the other end of the cathode rotating shaft which is not accommodated in the chamber 100 is separately provided. The inside of the chamber 100 may be accommodated inside the chamber 100, but may be disposed outside the chamber 100.

One side of the cathode rotating shaft accommodated in the end block 370 is provided with a rotating power providing unit (not shown) for providing rotational power to the cathode rotating shaft and the cathode backing tube (320). Then, the rotational power providing unit is connected to one side of the cathode rotation shaft accommodated in the end block 370.

In addition, the power supply unit 410 is provided on one side of the cathode rotation shaft such that the magnetron 330, the cathode backing tube 320, and the target 310 form a cathode. As such, the power supply unit 410 is also provided at one side of the cathode rotation shaft accommodated in the end block 370, similarly to the rotation power providing unit 360.

Then, the target backing tube 320 and the target 310 to form a cathode by the power supplied from the power supply unit 410, while preventing the high temperature due to the high-frequency power supply, the target cooling unit to be described later 350 is provided.

In addition, an electrical connection (not shown) may be provided between the rotatable cathode 300 and the power supply 410 to electrically connect the rotatable cathode 300 and the power supply 410.

The electrical connection part includes a non-solid material for power transmission to prevent electrical arcing or noise from being generated between the power supply 410 and the rotating cathode rotating shaft when the cathode rotating shaft is rotated.

In particular, since the power supplied from the power supply unit 410 is a high frequency RF or DC power is used, a non-solid material that can prevent the occurrence of electrical arcing or noise even during the rotation of the cathode rotating shaft is used, The solid material uses a liquid having high electrical conductivity. In this embodiment, the non-solid material for power transmission may use mercury.

In addition, the end block 370 is connected to one end of the cathode backing tube 320 to support the cathode backing tube 320, and also communicates with the target cooling unit 350 to be described later to target cooling the cooling water. At the same time as supplying to the unit 350 serves to discharge the cooling water discharged from the target cooling unit 350 to the outside.

1 to 11, the target cooling unit 350 is provided inside the cathode backing tube 320, but circulates coolant in the cathode backing tube 320 to cool the cathode backing tube 320. The target 310 is sequentially cooled through indirect contact with the target 310 to prevent the target 310 from melting or increasing the nonuniformity of the surface of the target 310, thereby preventing the uniformity of the thin film.

The target cooling unit 350 is in communication with the first cooling water flow path 351 and the first cooling water flow path 351 provided along the longitudinal direction of the cathode backing tube 320 at the center of the cathode backing tube 320 and the cathode backing tube. A second cooling water flow path 353 is provided adjacent to the inner peripheral surface of the cathode backing tube 320 along the longitudinal direction of the (320).

The first cooling water flow path 351 and the second cooling water flow path 353 are disposed long along the longitudinal direction of the cathode backing tube 320, and form a flow path through which the cooling water may move.

In addition, the second cooling water flow passage 353 may be formed on the inner circumferential surface of the cathode backing tube 320 to improve cooling efficiency of the cathode backing tube 320 and the target 310 through mutual heat exchange with the cathode backing tube 320. It may also be arranged in direct contact.

The cooling water that is moved along the first cooling water passage 351 and the second cooling water passage 353 is increased in temperature by the heat generated by the cathode backing tube 320 as the moving distance increases, thereby decreasing cooling efficiency.

Therefore, in order to increase the cooling effect on the cathode backing tube 320, the first cooling water flow path 351 and the second cooling water flow path 353 are different from each other in the inflow and outflow directions of the cooling water so as to flow in opposite directions.

That is, as shown in FIG. 2, when the coolant moves along the first coolant flow path 351 to the left, the coolant moves to the right in the second coolant flow path 353.

In FIG. 2, although the first cooling water flow path 351 and the second cooling water flow path 353 are illustrated, two or more cooling paths may be disposed in the cathode backing tube 320.

In order to cool the entirety along the longitudinal direction of the cathode backing tube 320, in particular, the first cooling water flow path 351 and the second cooling water flow path 353 are end blocks 370 connected to one end side of the cathode backing tube 320. In communication with).

Accordingly, the end block 370 communicates with the first cooling water flow path 351, and communicates with the cooling water inflow path 371 for supplying the cooling water to the first cooling water flow path 351, and the second cooling water flow path 353. A cooling water discharge path 373 for discharging the cooling water introduced from the cooling water flow path 353 is provided.

As described above, since the target cooling unit 350 cools the target 310 through indirect contact with the target 310, the target cooling unit 350 increases the area in which the coolant contacts the cathode backing tube 320 in the present embodiment. The target cooling efficiency improving unit 360 to increase the cooling efficiency for the 310 is provided in the cathode backing tube 320.

2 and 10, the target cooling efficiency improving unit 360 is provided to be spaced apart from each other on the cathode backing tube 320 and includes a plurality of uneven parts 361 in contact with the cooling water. That is, the plurality of uneven parts 361 are provided to be spaced apart from each other in the cathode backing tube 320 to be in contact with the cooling water moving along the second cooling water flow path 353.

As described above, the plurality of uneven parts 361 include a plurality of grooves 362 and 363 provided to be spaced apart from each other on the inner circumferential surface of the cathode backing tube 320 as shown in FIGS. 3 to 6.

3 to 6, the reason why the plurality of grooves 362 and 363 are arranged in the cathode backing tube 320 to be spaced apart from each other in succession is to maintain the rigidity of the cathode backing tube 320 while backing the cathode with the coolant. This is to increase the contact area of the tube 320 and at the same time increase the turbulence intensity of the cooling water passing through the plurality of grooves 362 and 363 so as to absorb more heat from the target 310 to the cathode backing tube 320. .

3 and 4, a plurality of grooves 362 are formed on the inner circumferential surface along the longitudinal direction of the cathode backing tube 320 in a hemispherical shape and not connected to each other independently.

5 and 6, the plurality of grooves 363 have a vandal key shape and a plurality of cathode backing tubes 320 are formed on the inner circumferential surface along the longitudinal direction in a state in which they are not connected to each other independently.

As described above, the plurality of grooves 362 and 363 formed on the inner circumferential surface of the cathode backing tube 320 increase the contact area between the coolant and the cathode backing tube 320 which are moved along the second coolant flow path 353. In addition, the cooling water moved along the second cooling water flow path 353 by the plurality of grooves 362 and 363 increases the turbulence intensity.

Accordingly, the coolant moving along the second coolant flow path 353 absorbs more heat from the target 310 to the cathode backing tube 320, thereby further improving the cooling efficiency of the target 310. Can be.

Meanwhile, as shown in FIGS. 7 and 8, in order to increase heat transfer to the target 310, the cathode backing tube 320, and the cooling water, the plurality of uneven parts 361 may have the inner circumferential surface of the cathode backing tube 320. And a plurality of groove portions 364 formed by filling the plurality of hole portions 366 penetrating the outer circumferential surface with the thermal conductive material 368 having high thermal conductivity.

Here, the thermally conductive material 368 is a material having good thermal conductivity, which is any one of gold, silver, copper, and the like, and an alloy material combining them.

As shown in FIG. 7 and FIG. 8, the reason why the plurality of grooves 364 are provided in the cathode backing tube 320 so as to be spaced apart from each other in succession is that the cathode backing with the coolant is maintained while maintaining the rigidity of the cathode backing tube 320. In order to increase the contact area of the tube 320 and increase the turbulence intensity of the coolant passing through the plurality of grooves 364 to absorb more heat from the target 310 to the cathode backing tube 320. .

3 to 8, the target cooling efficiency improving unit 360 is provided to be spaced apart from each other on the outer circumferential surface of the cathode backing tube 320, but a plurality of protrusions 365 protruding to contact the target 310. It further includes. This is to increase the amount of heat transferred from the target 310 to the cathode backing tube 320 by increasing the contact area between the target 310 and the cathode backing tube 320.

Since the amount of heat transferred from the target 310 is transferred to the cathode backing tube 320 and is absorbed by the coolant contacting the inner circumferential surface of the cathode backing tube 320 in which the grooves 362, 363 and 364 are formed, the cooling to the target 310 is performed. The efficiency can be further improved.

9 and 10, the target cooling efficiency improving unit 360 is provided on the cathode backing tube 320 to be spaced apart from each other, but the cooling water directly contacts the inner back surface of the target 310 with the cathode backing tube 320. It further comprises a plurality of holes 367 penetrating the inner circumferential surface and the outer circumferential surface of the.

A plurality of holes 367 are installed in the longitudinal direction of the cathode backing tube 320, and serves to cool the target 310 by directly contacting the coolant moving along the second cooling water flow path 353 with the inner circumferential surface of the target 310. Do it.

9 and 10, the reason why the plurality of hole parts 367 are provided in the cathode backing tube 320 to be spaced apart from each other without succession is to maintain the rigidity of the cathode backing tube 320 while maintaining the target with the coolant ( In order to make the 310 directly contact and at the same time increase the turbulence intensity of the cooling water passing through the plurality of holes 367 to absorb more heat from the target 310.

In FIGS. 9 and 10, only the hole 367 is illustrated in the cathode backing tube 320, but the grooves 362, 363, 364 and the protrusions 365 may be provided together in the cathode backing tube 320 as described above.

Meanwhile, in the present embodiment, the heat pipe module 380 is provided in the cathode backing tube 320 together with the target cooling unit 350 and the target cooling efficiency improving unit 360 to cool the target 310.

When the heat pipe module 380 is provided on the cathode backing tube 320, the end block 370 has a heat sink cooling unit 390 for cooling the heat sink 383 and the heat sink 383 of the heat pipe module 380. Is prepared.

2 and 11, the heat pipe module 380, together with the target cooling unit 350, is melted due to heat due to high frequency power supply, or the non-uniformity of the surface of the target 310 is increased. It serves to prevent the thin film uniformity from falling.

The heat pipe module 380 includes a plurality of heat pipes 381 respectively inserted into a plurality of grooves 382 formed along the longitudinal direction of the cathode backing tube 320, and a heat sink coupled to one side of the heat pipes 381. (383).

In the present embodiment, the heat pipe 381 is provided on the cathode backing tube 320 and absorbs heat from the cathode backing tube 320 transferred from the target 310, thereby allowing the cathode backing tube 320 and the target 310 to be absorbed. It serves to cool sequentially.

In the present embodiment, at least one of the inner circumferential surface and the outer circumferential surface of the cathode backing tube 320 is provided with a plurality of grooves 382 along the longitudinal direction of the cathode backing tube 320.

The heat pipe 381 is inserted into each of the plurality of grooves 382 along the longitudinal direction of the cathode backing tube 320. That is, the heat absorbing portion of the heat pipe 381 is disposed along the longitudinal direction of the cathode backing tube 320.

The heat of the cathode backing tube 320 absorbed by the heat absorbing portion of the heat pipe 381 is transferred to the condensation portion of the heat pipe 381, and by the heat sink 383 coupled to the condensation portion region of the heat pipe 381. It is discharged to the outside.

Therefore, in the present embodiment, the heat sink 383 is disposed inside the end block 370 in FIGS. 2 and 11 to effectively discharge the heat transferred to the condensation part of the heat pipe 381 to the outside.

2 and 11, a heat sink cooling unit 390 for cooling the heat sink 383 is provided inside the end block 370.

The heat sink cooling unit 390 is provided to communicate with the inside of the end block 370 in which the heat sink 383 is disposed, but the coolant inlet 391 and the coolant inlet 391 are connected to the coolant, and the coolant is connected to the heat sink 383. The cooling water outlet 393 is discharged after cooling.

Referring to the operation of the sputtering apparatus according to the present invention configured as described above are as follows.

Referring to FIG. 1, the substrate 10 is introduced through the substrate inlet 130 of the chamber 100, is disposed at the deposition position on the substrate transfer support 200, and then a deposition process is started.

That is, for example, argon (Ar) gas is filled into the chamber 100, and the chamber 100 maintains a high vacuum while its interior is sealed.

In this state, when a cathode voltage is applied to the rotatable cathode 300 from the power supply unit 410, the electrons emitted from the target 310 collide with the argon (Ar) gas to ionize the argon (Ar) gas.

In order to prevent the target 310 from melting due to heat generated during the deposition process, or the unevenness of the surface of the target 310 is increased, the sputtering apparatus according to the present invention includes a target cooling unit 350, The target 310 is cooled by using the target cooling efficiency improving unit 360 and the heat pipe module 380.

The target cooling unit 350 cools the heat sequentially transferred to the target 310 and the cathode backing tube 320 while the coolant moves along the second cooling water flow path 353 provided adjacent to the cathode backing tube 320. do.

In addition, in order to improve the cooling efficiency of the target 310 by the target cooling unit 350, the target cooling efficiency improving unit 360 is provided in the cathode backing tube 320.

The target cooling efficiency improving unit 360 increases the contact area between the coolant moving along the second coolant flow path 353 and the cathode backing tube 320, thereby further adding heat transferred to the cathode backing tube 320. Allow them to endotherm much.

As described above, the target cooling efficiency improving unit 360 includes a plurality of grooves 362, 363 and 364 provided in the cathode backing tube 320 and a plurality of cathode backing tubes 320 as shown in FIGS. 3 to 10. And a hole 367 provided in the protrusion 365 and the cathode backing tube 320.

In addition, the heat pipe module 380 provided in the cathode backing tube 320 together with the target cooling unit 350 and the target cooling efficiency improving unit 360 may include a cathode backing tube along the longitudinal direction of the cathode backing tube 320. The heat absorbing portion of the heat pipe 381 is inserted into each of the plurality of groove portions 382 formed on at least one of the inner circumferential surface and the outer circumferential surface of the 320.

Then, the heat sink 383 is coupled to the condensation portion of the heat pipe 381. The heat sink 383 is disposed inside the end block 370 connected to one end side of the cathode backing tube 320.

In order to improve the heat dissipation effect of the heat dissipation plate 383, a heat dissipation plate cooling unit 390 is provided inside the end block 370 to cool the heat dissipation plate 383.

As such, by cooling the cathode backing tube 320 and the target 310 by using the target cooling unit 350, the target cooling efficiency improving unit 360, and the heat pipe module 380, high frequency power can be stably supplied. The high film deposition rate can be maintained in a short process time.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

100: chamber 300: rotatable cathode
310: target 320: cathode backing tube
350: target cooling unit 360: target cooling efficiency improvement unit
370: endblock 380: heat pipe module
390: heat sink cooling unit

Claims (13)

A chamber forming a deposition space for the substrate; And
Is provided rotatably inside the chamber, comprising a rotatable cathode for providing a deposition material toward the substrate,
The rotating cathode includes:
A target for providing a deposition material toward the substrate;
A cathode backing tube having the target provided on an outer circumferential surface thereof;
The first cooling water flow path provided in the center of the cathode backing tube and the first cooling water flow path to circulate the cooling water to cool the target through indirect contact with the target, the along the longitudinal direction of the cathode backing tube A target cooling unit including a second cooling water flow path provided adjacent to an inner circumferential surface of the cathode backing tube; And
A target cooling efficiency improving unit provided in the cathode backing tube, the cooling water increasing the area in contact with the cathode backing tube to increase the cooling efficiency for the target;
The target cooling efficiency improvement unit,
A plurality of uneven parts provided on the inner circumferential surface of the cathode backing tube to be in contact with the coolant moving along the second coolant flow path; And
Sputtering apparatus provided on the outer circumferential surface of the cathode backing tube, a plurality of protrusions of the projecting shape in contact with the target. delete The method of claim 1,
The plurality of uneven parts,
Sputtering apparatus including a plurality of grooves provided to be spaced apart from each other on the inner circumferential surface of the cathode backing tube. The method of claim 1,
The plurality of uneven parts,
Sputtering apparatus provided on the inner circumferential surface of the cathode backing tube spaced apart from each other, a plurality of grooves formed by filling a thermal conductive material in a plurality of holes through the inner circumferential surface and the outer circumferential surface of the cathode backing tube. 5. The method of claim 4,
The thermally conductive material is any one of gold, silver, copper, and alloy materials in combination thereof. delete The method of claim 1,
The target cooling efficiency improvement unit,
And a plurality of holes provided in the cathode backing tube to be spaced apart from each other and passing through the inner circumferential surface and the outer circumferential surface of the cathode backing tube in direct contact with the inner circumferential surface of the target. The method of claim 1,
The rotating cathode includes:
And a heat pipe module provided in the cathode backing tube to cool the target. 9. The method of claim 8,
The heat pipe module,
A plurality of heat pipes respectively inserted into the plurality of grooves formed along the longitudinal direction of the cathode backing tube; And
Sputtering apparatus comprising a heat sink coupled to one side of the heat pipe. 10. The method of claim 9,
[0028]
Sputtering apparatus, characterized in that formed on at least one of the inner circumferential surface and the outer circumferential surface of the cathode backing tube. 10. The method of claim 9,
The rotating cathode includes:
It is connected to one end of the cathode backing tube, and in communication with the target cooling unit further comprises an end block to which the cooling water discharged from the target cooling unit at the same time to supply the cooling water to the target cooling unit,
Sputtering apparatus, characterized in that the heat sink is disposed inside the end block. 12. The method of claim 11,
The rotating cathode includes:
Sputtering apparatus provided in the end block, further comprising a heat sink cooling unit for cooling the heat sink by circulating a cooling water. The method of claim 12,
The heat sink cooling unit,
A cooling water inlet provided in communication with the inside of the end block in which the heat sink is disposed and into which the cooling water flows; And
And a cooling water outlet communicating with the cooling water inflow path and discharged after the cooling water cools the heat sink.

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