KR101329764B1 - Apparatus to sputter - Google Patents

Abstract

A sputtering apparatus is disclosed. Sputtering apparatus according to an embodiment of the present invention, the chamber for forming a deposition space for the substrate; A rotatable cathode rotatably provided in the chamber, the target cathode providing a deposition material toward the substrate, a cathode backing tube in which the target is provided on the outer wall, and a magnet unit provided in the cathode backing tube; A target cooling unit provided adjacent to an inner wall of the cathode backing tube to circulate the cooling water to cool the target; And a heat pipe module provided adjacent to the target cooling unit and cooling the target.

Description

[0001] APPARATUS TO SPUTTER [0002]

The present invention relates to a sputter apparatus, and more particularly, to a sputter apparatus capable of improving the cooling efficiency of the target surface.

Flat displays such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel) and OLED (Organic Light Emitting Diodes) and semiconductors are manufactured through various processes such as thin film deposition and etching.

Among various processes, the thin film deposition process is largely divided into two according to the important principle of the deposition.

One is Chemical Vapor Deposition (CVD), and the other is Physical Vapor Deposition (PVD), which is widely used in accordance with current process characteristics.

The chemical vapor deposition is a method of plasma-forming by an external high-frequency power source so that silicon compound ions having high energy are ejected from the showerhead through the electrode and deposited on the substrate.

In contrast, physical vapor deposition, which can be represented by a sputtering apparatus, is a method in which enough energy is applied to ions in a plasma to collide with a target, and then sputtered target atoms are deposited on the substrate.

Of course, in addition to the above-described sputtering method, physical vapor deposition may be performed by a method such as E-Beam, Evaporation, Thermal Evaporation, etc. Hereinafter, a sputtering method Will be referred to as physical vapor deposition.

Conventional sputtering apparatuses include a cathode having a chamber in which a sputtering process is performed, a target as a sputtering source for providing a deposition material toward a substrate placed in a deposition position in the chamber, and a cathode backing tube in which the target is provided on an outer wall. It includes.

The target is provided on the outer wall of the cathode backing tube. When the cathode backing tube becomes negative voltage by power supplied from the outside, the target connected to the cathode backing tube is sputtered and thin film deposition is performed on the substrate.

The cathode of the conventional sputtering device is mainly a cathode of the planar form, but in recent years, the use of a rotating cathode has been gradually increased to develop a cathode capable of rotating the 360 ° around the axis of rotation.

On the other hand, in the sputtering device, high temperature heat is generated in the target portion where the plasma is directly hit by the high energy of the charged particles during thin film deposition. This heat causes a rise in the temperature of the target, and if sufficient cooling is not achieved, the target may melt or the nonuniformity of the target surface may increase, resulting in a decrease in film uniformity.

Therefore, high power must be applied to maintain a high film deposition rate in a short process time. Therefore, research is needed to improve the cooling efficiency of the target to prevent the target from melting due to the temperature rise of the target, which may occur due to high power application, or the uniformity of the target.

[Document 1] KR 10-2006-0111896 A (Bekaert Advanced Coatings) 2006.10.30.

Therefore, the technical problem to be solved by the present invention is to provide a sputtering device that can improve the productivity and deposition quality by increasing the deposition rate of the thin film can be applied by improving the cooling efficiency of the target surface.

According to an aspect of the invention, the chamber for forming a deposition space for the substrate; A rotatable type provided rotatably inside the chamber, the target providing a deposition material toward the substrate, a cathode backing tube provided on the outer wall of the target, and a magnet unit provided inside the cathode backing tube Cathode; A sputtering apparatus provided adjacent to the inner wall of the cathode backing tube and configured to cool the target by circulating cooling water; and a sputtering apparatus including a heat pipe module provided adjacent to the target cooling unit to cool the target. Can be provided.

The target cooling unit may be provided adjacent to the inner wall of the cathode backing tube, and may include a plurality of cooling passages through which the cooling water flows in and discharges in opposite directions.

The rotatable cathode is connected to one end of the cathode backing tube, the cathode rotating shaft for rotating the cathode backing tube; A rotating shaft housing having one end of the cathode rotating shaft accommodated therein; And an end block connected to the other end of the cathode backing tube and supporting the cathode backing tube, wherein the cooling passage may be installed in communication with the rotary shaft housing.

Each of the rotary shaft housing and the end block, the cooling water inlet is in communication with the cooling flow path to the cooling water inlet; And a cooling water discharge port communicating with the cooling channel and discharged after the cooling water is moved along the cooling channel.

The magnet unit may include a plurality of magnets disposed to be spaced apart from each other on a base pole plate provided in the cathode backing tube to generate a magnetic field, and the heat pipe module may be provided along a length direction of the cathode backing tube. A plurality of heat pipes installed between the plurality of magnets; And it may include a heat sink coupled to one side of the heat pipe.

The heat sink may be disposed in at least one of the rotary shaft housing and the end block.

The heat pipe module may include a plurality of heat pipes provided along a length direction of the cathode backing tube; A plate connected to one side of the heat pipe and disposed in contact with the plurality of cooling passages; And it may include a heat sink coupled to one side of the heat pipe.

The heat sink may be disposed in at least one of the rotary shaft housing and the end block.

The heat pipe module, the jacket portion provided along the longitudinal direction of the cathode backing tube; A plurality of heat pipes inserted into the jacket and spaced apart from each other; And it may include a heat sink coupled to one side of the heat pipe.

The jacket part may be disposed to be in contact with the plurality of cooling passages, and may have a shape corresponding to that of the cathode backing tube.

The heat sink may be disposed in at least one of the rotary shaft housing and the end block.

The rotatable cathode may further include a heat dissipation plate cooling unit provided inside the rotary shaft housing or the end block in which the heat dissipation plate is disposed and circulating coolant to cool the heat dissipation plate.

The heat dissipation plate cooling unit is provided to communicate with the inside of the rotary shaft housing or the end block in which the heat dissipation plate is disposed; And a cooling water discharge path communicating with the cooling water inflow path and discharged after the cooling water cools the heat sink.

Embodiments of the present invention, by cooling the target by using the target cooling unit and the heat pipe module, it is possible to apply a high power to improve the productivity and deposition quality according to the increase in the thin film deposition rate.

1 is a schematic view showing a sputtering apparatus according to an embodiment of the present invention.
2 is a perspective view illustrating a coupling state of a rotatable cathode, a target cooling unit, and a heat pipe module according to an exemplary embodiment of the present invention.
3 is a cross-sectional view illustrating a cross section along AA of FIG. 2.
4 is a cross-sectional view illustrating an installation state of a heat pipe module according to a cross-sectional view taken along line BB of FIG. 2.
5 is an enlarged view illustrating a portion C of FIG. 2.
FIG. 6 is an enlarged view illustrating part D of FIG. 2.
7 is a schematic view showing a sputtering apparatus according to another embodiment of the present invention.
8 is a perspective view illustrating a coupling state of a rotatable cathode, a target cooling unit, and a heat pipe module according to another embodiment of the present invention.
9 is a cross-sectional view illustrating a cross section along AA of FIG. 8.
FIG. 10 is a cross-sectional view illustrating a BB cross section of FIG. 8.
FIG. 11 is an enlarged view illustrating a portion C of FIG. 8.
FIG. 12 is an enlarged view illustrating a portion D of FIG. 8.
13 is a schematic structural diagram of a sputtering apparatus according to still another embodiment of the present invention.
14 is a perspective view illustrating a coupling state of a rotatable cathode, a target cooling unit, and a heat pipe module according to another embodiment of the present invention.
15 is a cross-sectional view illustrating a cross section along AA of FIG. 14.
FIG. 16 is a cross-sectional view illustrating a BB cross section in FIG. 14.
17 is an enlarged view illustrating a portion C of FIG. 14.
18 is an enlarged view illustrating a portion D of FIG. 14.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

The substrate to be described below may be a flat panel display substrate such as a liquid crystal display (LCD), a plasma display panel (PDP), or an organic light emitting diode (OLED), a solar cell substrate, or a semiconductor wafer substrate.

Hereinafter, a sputtering apparatus according to an embodiment of the present invention will be described.

1 is a structural diagram schematically showing a sputtering apparatus according to an embodiment of the present invention, Figure 2 is a perspective view showing a coupling state of a rotatable cathode, a target cooling unit and a heat pipe module according to an embodiment of the present invention, 3 is a cross-sectional view showing a cross section AA of FIG. 2, FIG. 4 is a cross-sectional view showing the installation state of the heat pipe module according to the BB cross-section of FIG. 2, FIG. FIG. 2 is an enlarged view illustrating portion D of FIG. 2.

1 to 6, a sputtering apparatus according to an embodiment of the present invention includes a chamber 100 forming a deposition space for a substrate 10, and a substrate 10 formed inside the chamber 100. The substrate transfer support 200 for supporting the transfer, and the target 310 and the target 310 is provided on the outer wall rotatably provided inside the chamber 100 to provide a deposition material toward the substrate 10 The rotatable cathode 300 having the cathode backing tube 320 and the magnet unit 330 provided inside the cathode backing tube 320 and the rotatable cathode 300 are provided on one side of the rotatable cathode 300. A power supply 410 for supplying power) and an electrical connection part 430 provided between the rotatable cathode 300 and the power supply 410 but electrically connecting the rotatable cathode 300 and the power supply 410. And, provided adjacent to the inner wall of the cathode backing tube 320 but circulating the coolant target ( A target cooling unit 600 for cooling 310 and a heat pipe module 500 provided adjacent to the target cooling unit 600 to cool the target 310.

Sputtering apparatus according to an embodiment of the present invention, the heat pipe module 500 to prevent the target 310 is melted due to heat generated during the deposition process or the non-uniformity of the surface of the target 310 is increased to reduce the uniformity of the film And the target 310 is cooled using the target cooling unit 600.

Referring to FIG. 1, the chamber 100 forms a deposition space for the substrate 10, and the inside of the chamber 100 is sealed and maintained in a vacuum state during the deposition process. To this end, a gate valve 110 is provided in the lower region of the chamber 100, and a vacuum pump 120 is provided in the gate valve 110 region.

When a vacuum pressure is generated from the vacuum pump 120 while the gate valve 110 is opened, the inside of the chamber 100 may maintain a high vacuum state.

A substrate inlet 130 through which the substrate 10 is introduced into the chamber 100 is formed at one side of the chamber 100, and the substrate 10 from the chamber 100 is drawn out at the other side of the chamber 100. The substrate outlet 140 is formed. Separate gate valves (not shown) may also be provided at the substrate inlet 130 and the substrate outlet 140.

In the upper region of the chamber 100, a cover 150 coupled to the chamber 100 is provided to surround the region of the rotatable cathode 300 provided with the target 310 and the cathode backing tube 320.

In the present embodiment, two rotatable cathodes 300 are provided in the chamber 100, but the present invention is not limited thereto, and one rotatable cathode 300 may be provided. In this case, the cover 150 has a shape that rises to the top of the chamber 100 in two regions in which the rotatable cathode 300 is located. In this case, the covers 150 are hermetically connected by the lids 160.

The substrate transfer support part 200 is disposed in the central region of the chamber 100 to support the substrate 10 and to transfer the substrate 10 introduced into the substrate inlet 130 to the substrate outlet 140. .

The substrate transfer support 200 may be applied by a roller. In view of the fact that the inside of the chamber 100 maintains a high temperature, the substrate transfer support 200 may be made of a material having excellent heat resistance and durability.

In the lower region of the substrate transfer support 200, a heater 210 is provided to heat the deposition surface of the substrate 10 on the substrate transfer support 200. The heater 210 serves to heat the substrate 10 to a few hundred degrees or more so that the deposition material provided from the target 310 can be well deposited on the substrate 10. The heater 210 may have a size that is similar to or larger than the size of the substrate 10 so as to evenly and rapidly heat the entire surface of the substrate 10.

2 to 6, the rotatable cathode 300 is provided in the upper region of the chamber 100, and in particular, the target 310 provided in the rotatable cathode 300 is deposited on the substrate transfer support 200. It serves as a sputter source for providing the deposition material towards the substrate 10 in place.

The rotatable cathode 300 includes a target 310 for providing a deposition material toward the substrate 10, a cathode backing tube 320 provided on the outer wall of the target 310, and a cathode backing tube 320. A magnet unit 330 provided to generate a magnetic field, a cathode rotating shaft 340 connected to one end of the cathode backing tube 320 to rotate the cathode backing tube 320, a cathode backing tube 320 and a cathode rotating shaft ( 340 is provided between the coupling member 350 for coupling the cathode backing tube 320 and the cathode rotating shaft 340, and is connected to the cathode rotating shaft 340 to rotate the cathode rotating shaft 340 and the cathode backing tube 320 Rotational power providing unit 360 for providing a rotational power to rotate, the rotary shaft housing 370, one end of the cathode rotating shaft 340 is received and supported, and the other end of the cathode backing tube 320, the cathode backing tube ( Endblock 380 supporting 320, and rotating It includes at least a heat sink cooling unit 390 is provided in the interior of any of the housing 370 and end block 380.

Typically, the region of the target 310 and the magnet unit 330 form a cathode, and the region of the substrate 10 forms an anode.

In the present embodiment, the target 310 is provided in the rotatable cathode 300 provided inside the chamber 100, so that the rotatable cathode 300 also forms a cathode, the rotatable cathode 300 and the target 310, and When cathodes are formed in both regions of the magnet unit 330, the target 310 provides a deposition material toward the substrate 10 in the lower region.

In this embodiment, the target 310 may be made of a low melting point target 310 (for example, indium, silver, etc.) to have a high deposition rate, but is not limited thereto.

In addition, the target 310 is formed to surround the outer wall of the cylindrical cathode backing tube 320 to be described later. In this case, the target 310 is formed in a cylindrical shape on the outer wall of the cathode backing tube 320 to correspond to the cylindrical shape of the cathode backing tube 320.

The magnet unit 330 is provided inside the cathode backing tube 320 to generate a magnetic field. The target 310 is provided on the outer wall of the cathode backing tube 320 while the magnet unit 330 is provided inside the cathode backing tube 320 to generate a magnetic field for deposition between the substrate 10.

 The magnet unit 330 includes a plurality of magnets 333 and 335 which are relatively movable relative to the target so as to adjust an interval or a position with respect to the target, and a base pole plate 331 which forms a base for the plurality of magnets 333 and 335. ) And individual pole plates (not shown) that individually support the plurality of magnets 333 and 335 relative to the base pole plate 331.

The plurality of magnets 333 and 335 may include a central magnet 335 disposed in a central area of the base pole plate 331 and an outer magnet 333 disposed outside the central magnet 335. Here, the protruding height of the outer magnet 333 may be lower than the protruding height of the central magnet 335, but may be changed in consideration of the flow or strength of the magnetic field. A heat pipe 510 to be described later may be installed between the central magnet 335 and the outer magnet 333.

The cathode backing tube 320 may be formed in a cylindrical shape having a size enough to form a sufficient space therein surrounding the magnet unit 330, but is not limited thereto and may be formed in various shapes.

The cathode rotating shaft 340 for rotating the cathode backing tube 320 may be formed in a cylindrical shape corresponding to the cathode backing tube 320 so as to be connected to one end of the cathode backing tube 320.

Further, a coupling member 350 is further provided between the cathode backing tube 320 and the cathode rotation shaft 340, and the coupling member 350 couples the cathode backing tube 320 and the cathode rotation shaft 340.

Only one end of the cathode rotating shaft 340 connected by the cathode backing tube 320 and the coupling member 350 is accommodated inside the chamber 100, and the other end of the cathode rotating shaft 340 not received inside the chamber 100. May be accommodated in the separately provided rotating shaft housing 370 and disposed outside the chamber 100, but the entire cathode rotating shaft 340 may be accommodated in the chamber 100.

One side of the cathode rotating shaft 340 accommodated in the rotating shaft housing 370 is provided with a rotating power providing unit 360 for providing rotational power to the cathode rotating shaft 340 and the cathode backing tube 320. In addition, the rotation power providing unit 360 is connected to one side of the cathode rotation shaft 340 accommodated in the rotation shaft housing 370.

In addition, the power supply unit 410 may be provided at one side of the cathode rotation shaft 340 such that the magnet unit 330, the cathode backing tube 320, and the target 310 form a cathode. As such, the power supply unit 410 may be provided at one side of the cathode rotating shaft 340 accommodated in the rotating shaft housing 370, similarly to the rotating power providing unit 360.

The target cooling unit, which will be described later, to prevent the cathode backing tube 320 and the target 310 from becoming high temperature due to the high frequency power supply while forming a cathode by the power supplied from the power supply unit 410. 600 and heat fight module 500 are provided.

In addition, an electrical connection portion 430 may be provided between the rotatable cathode 300 and the power supply 410 to electrically connect the rotatable cathode 300 and the power supply 410.

The electrical connector 430 prevents electrical arcing or noise from occurring between the power supply 410 and the rotating cathode rotating shaft 340 when the cathode rotating shaft 340 is rotated, and a non-solid material for power transmission to transfer power. It includes.

In particular, since the power supplied from the power supply unit 410 is a high frequency RF or DC power is used, a non-solid material that can prevent the occurrence of electrical arcing or noise even when the cathode rotating shaft 340 is used, the power The non-solid material for delivery uses a liquid having high electrical conductivity. In the present embodiment, the non-solid material for power transmission may use mercury.

In addition, the end block 380 is connected to the other end of the cathode backing tube 320 opposite to the rotating shaft housing 370, and serves to support the cathode backing tube 320.

2 to 6, the target cooling unit 600 is provided adjacent to the inner wall of the cathode backing tube 320 and circulates the coolant to sequentially cool the cathode backing tube 320 and the target 310. The target 310 may be melted or the non-uniformity of the surface of the target 310 may be increased to prevent the uniformity of the thin film.

The target cooling unit 600 is provided to communicate with the inside of the cathode backing tube 320 and includes a plurality of cooling passages 610 in which cooling water is introduced into and discharged from opposite directions.

The plurality of cooling passages 610 are provided adjacent to the inner wall of the cathode backing tube 320 and are disposed long along the longitudinal direction of the cathode backing tube 320 to form a flow path through which the coolant can move.

Each of the plurality of cooling passages 610 is directly connected to the inner wall of the cathode backing tube 320 to improve cooling efficiency of the cathode backing tube 320 and the target 310 through mutual heat exchange with the cathode backing tube 320. It may be arranged in contact.

Since the cooling water moved along the cooling channel 610 is increased in temperature by the heat of the cathode backing tube 320 as the moving distance increases, the cooling efficiency is lowered. Therefore, in order to increase the cooling effect on the cathode backing tube 320, the cooling flow path 610 is different in the inflow and outflow direction of the cooling water to be flowed in the opposite direction to the other adjacent cooling flow path 610.

That is, as shown in FIG. 2, when the cooling water is moved to the left along one of the two cooling passages 610, the cooling water is moved to the right in the other cooling passage 610. 2 and 3 illustrate two cooling passages 610, but the present disclosure is not limited thereto and may include two or more cooling passages 610.

In order to cool the cathode backing tube 320 in the longitudinal direction as a whole, the plurality of cooling passages 610 may include a rotary shaft housing 370 disposed at one end side of the cathode backing tube 320 and an end disposed at the other end side. Block 380 may be formed in communication.

At this time, each of the rotary shaft housing 370 and the end block 380 is in communication with the cooling flow path 610 and the cooling water inlet 630 through which the cooling water flows, and communicates with the cooling flow path 610 but is introduced into the cooling water inlet 630. The cooling water outlet 650 is discharged after the cooling water moves along the cooling channel 610.

2 to 6, the heat pipe module 500 serves to prevent the target 310 from melting due to heat due to the high frequency power supply or from increasing the nonuniformity of the surface of the target 310 to reduce the uniformity of the thin film. Do it.

The heat pipe module 500 is provided along the longitudinal direction of the cathode backing tube 320 and is coupled to a plurality of heat pipes 510 and one side of the heat pipe 510 which are installed between the plurality of magnets 333 and 335. A heat sink 530 is included.

The heat pipe 510 is provided between the central magnet 335 and the outer magnet 333, and the heat absorbing portion of the heat pipe 510 is disposed along the longitudinal direction of the cathode backing tube 320.

In the present embodiment, since the plurality of cooling passages 610 are disposed adjacent to the inner wall of the cathode backing tube 320, the heat pipe 510 is connected to the target 310, the cathode backing tube 320, and the cooling passage 610. By absorbing the heat sequentially transferred, the cathode backing tube 320, the target 310 and the cooling passage 610 serves to sequentially cool.

Heat absorbed by the heat absorbing portion of the heat pipe 510 is transferred to the condensation portion of the heat pipe 510, and is discharged to the outside by the heat sink 530 coupled to the condensation region of the heat pipe 510.

In the present embodiment, the heat dissipation plate 530 is disposed inside the end block 380 in FIGS. 2 and 66 to effectively discharge the heat transferred to the condensation part of the heat pipe 510 to the outside, but is not limited thereto. The heat sink 530 may also be disposed inside the rotation shaft housing 370. In addition, the heat sink 530 may be disposed in the cathode backing tube 320.

6, the heat dissipation plate cooling unit 390 for cooling the heat dissipation plate 530 is provided inside the end block 380, but the heat dissipation plate 530 is not limited thereto. When disposed in the heat sink cooling unit 390 may also be provided in the rotating shaft housing 370.

The heat sink cooling unit 390 is provided to communicate with the inside of the end block 380 or the rotating shaft housing 370 where the heat sink 530 is disposed, but the coolant inflow path 391 and the coolant inflow path 391 into which the coolant flows. In communication with the cooling water includes a cooling water discharge path (393) is discharged after cooling the heat sink (530).

The operation of the sputtering apparatus according to an embodiment of the present invention will now be described.

Referring to FIG. 1, the substrate 10 is introduced through the substrate inlet 130 of the chamber 100, is disposed at the deposition position on the substrate transfer support 200, and then a deposition process is started.

That is, for example, argon (Ar) gas is filled into the chamber 100, and the chamber 100 maintains a high vacuum while its interior is sealed.

In this state, when a cathode voltage is applied to the rotatable cathode 300 from the power supply unit 410, the electrons emitted from the target 310 collide with the argon (Ar) gas to ionize the argon (Ar) gas.

In order to prevent the target 310 from melting due to the heat generated during the deposition process or the unevenness of the surface of the target 310 is increased, the uniformity of the thin film is reduced. In this embodiment, the target cooling unit 600 and the heat pipe module ( 500 is provided inside the cathode backing tube 320 to cool the target 310.

Looking at the operation of the target cooling unit 600 according to the present embodiment, the cathode backing tube 320 in order to prevent the cooling efficiency is lowered by increasing the temperature while the cooling water moves along the longitudinal direction of the cathode backing tube 320, A plurality of cooling passages 610 are installed in which the coolant flows in and out in the opposite direction along the longitudinal direction of the cross-section.

In order to cool the cathode backing tube 320 in the longitudinal direction as a whole, the plurality of cooling passages 610 are connected to one end of the rotary shaft housing 370 and the other end of the cathode backing tube 320. Block 380 is installed in communication.

In addition, the cooling shaft inlet 630 and the cooling water introduced to the cooling water inlet 630 communicate with the cooling passage 610 in the rotary shaft housing 370 and the end block 380 along the cooling passage 610. After the cooling water discharge port 650 is discharged is installed.

Looking at the flow of the cooling water by the target cooling unit 600, as shown in Figure 2, after the cooling water flows into the cooling water inlet 630 installed in the rotating shaft housing 370 of the cathode backing tube 320 in the longitudinal direction It is moved along the flow path and is discharged to the cooling water outlet 650 installed in the end block 380. In addition, after the coolant flows into the coolant inlet 630 installed in the end block 380, the coolant is moved along the longitudinal flow path of the cathode backing tube 320 and discharged to the coolant outlet 650 installed in the rotary shaft housing 370. do.

Referring to the operation of the heat pipe module 500 according to the present embodiment, the heat absorbing portion of the plurality of heat pipes 510 is installed between the magnets 333 and 335 provided along the longitudinal direction of the cathode backing tube 320.

Then, the heat sink 530 is coupled to the condensation part of the heat pipe 510. The heat sink 530 is disposed inside the end block 380 connected to one end side of the cathode backing tube 320. Meanwhile, although the heat sink 530 is disposed in the end block 380 in FIGS. 2 and 6, the heat sink 530 may be disposed in the rotary shaft housing 370 without being limited thereto. In addition, the heat sink 530 may be disposed in the cathode backing tube 320.

And, in order to improve the heat dissipation effect of the heat sink 530, a heat sink cooling unit 390 for cooling the heat sink 530 is provided inside the end block 380.

The heat sink cooling unit 390 cools the heat sink 530 by the coolant, and the heat sink cooling unit 390 communicates with the inside of the end block 380 to provide the coolant inflow path 391 and the coolant inflow. In communication with the furnace (391), the cooling water includes a cooling water discharge path (393) is discharged after cooling the heat sink (530).

 As such, by cooling the cathode backing tube 320 and the target 310 by using the target cooling unit 600 and the heat pipe module 500, it is possible to stably supply high-frequency power, thereby achieving high thin film deposition rate in a short process time. I can keep it.

Hereinafter, a sputtering apparatus according to another embodiment of the present invention will be described.

7 is a structural diagram schematically showing a sputtering apparatus according to another embodiment of the present invention, Figure 8 is a perspective view showing a coupling state of a rotatable cathode, a target cooling unit and a heat pipe module according to another embodiment of the present invention, FIG. 9 is a cross-sectional view illustrating the AA cross section of FIG. 8, FIG. 10 is a cross-sectional view illustrating the BB cross section of FIG. 8, FIG. 11 is an enlarged view illustrating a portion C of FIG. 8, and FIG. 12 is a portion D of FIG. 8. It is an enlarged view.

7 to 12, a sputtering apparatus according to another embodiment of the present invention is provided with a chamber 100a for forming a deposition space for the substrate 10a and a chamber 100a, and the substrate 10a. The substrate transfer support 200a for supporting the transfer and the target 310a and the target 310a which are rotatably provided inside the chamber 100a and provide a deposition material toward the substrate 10a are provided on the outer wall. The rotatable cathode 300a having the magnet backing tube 320a and the magnet unit 330a provided inside the cathode backing tube 320a and the rotatable cathode 300a are provided on one side of the rotatable cathode 300a. An electrical connection part 430a provided between the power supply part 410a and the rotatable cathode 300a and the power supply part 410a to electrically connect the rotatable cathode 300a and the power supply part 410a. ), And is provided adjacent to the inner wall of the cathode backing tube (320a), but cooling A circulating and targeted cooling section (600a) to cool the target (310a), doedoe provided inside of the cathode backing tube (320a) includes a heat pipe module (500a) to cool the target (310a).

The sputtering apparatus according to another embodiment of the present invention, the heat pipe module 500a to prevent the target 310a from melting due to heat generated during the deposition process, or the unevenness of the surface of the target 310a is increased, thereby reducing the uniformity of the thin film. And the target cooling unit 600a to cool the target 310a.

According to another embodiment of the present invention, the chamber 100a, the substrate transfer support 200a, the rotatable cathode 300a, the power supply 410a, the electrical connection 430a and the target cooling unit 600a are Since the chamber 100, the substrate transfer support 200, the rotatable cathode 300, the power supply 410, the electrical connection 430, and the target cooling unit 600 according to an embodiment are the same, detailed description thereof will be provided. In the following description, the difference between the heat pipe modules 500a will be described.

7 to 12, in the present embodiment, the heat pipe module 500a may be melted due to heat due to a high frequency power supply, or the non-uniformity of the surface of the target 310a may be increased to reduce the uniformity of the thin film. Serves to prevent this from happening.

The heat pipe module 500a may be connected to one side of the heat pipe 510a and the plurality of heat pipes 510a provided along the longitudinal direction of the cathode backing tube 320a and to be in contact with the plurality of cooling flow paths 610a. The plate 550a is disposed, and a heat sink 530a coupled to one side of the heat pipe 510a.

The heat pipe 510a is provided inside the target cooling unit 600a, in particular, the cooling passage 610a, and the heat absorbing portion of the heat pipe 510a is disposed along the longitudinal direction of the cathode backing tube 320.

The plate 550a is connected to one side of the heat pipe 510a and contacts the cooling flow path 610a so that the heat absorbing portion of the heat pipe 510a is the target 310a, the cathode backing tube 320a and the cooling flow path 610a. To absorb more heat sequentially.

In this embodiment, the heat pipe 510a absorbs heat sequentially transferred to the target 310a, the cathode backing tube 320a, and the cooling flow path 610a, and thus, the cathode backing tube 320a, the target 310a, and the cooling. It serves to cool the flow path 610a sequentially.

The heat absorbed by the heat absorbing portion of the heat pipe 510a is transferred to the condensation portion of the heat pipe 510a and discharged to the outside by the heat sink 530a coupled to the condensation portion of the heat pipe 510a.

In the present embodiment, the heat sink 530a is disposed inside the end block 380a in FIGS. 8 and 12 so as to effectively discharge heat transferred to the condensation part of the heat pipe 510a to the outside, but is not limited thereto. The heat sink 530a may be disposed inside the rotation shaft housing 370a. In addition, the heat sink 530a may be disposed in the cathode backing tube 320a.

12, the heat sink cooling unit 390a for cooling the heat sink 530a is provided in the end block 380a, but the heat sink 530a is not limited thereto. When disposed in the heat sink cooling unit 390a may also be provided in the rotating shaft housing 370a.

The heat sink cooling unit 390a is provided to communicate with the inside of the end block 380a or the rotating shaft housing 370a in which the heat sink 530a is disposed, and the coolant inflow path 391a into which the coolant flows, and the coolant inflow path 391a. It is in communication with the cooling water includes a cooling water discharge path (393a) is discharged after cooling the heat sink (530a).

Referring to the operation of the sputtering apparatus according to another embodiment of the present invention configured as described above are as follows.

7 to 12, the substrate 10a is introduced through the substrate inlet 130a of the chamber 100a, is disposed at a deposition position on the substrate transfer support 200a, and a deposition process is started.

That is, for example, argon (Ar) gas is filled into the chamber 100a, and the chamber 100a maintains high vacuum while its interior is sealed.

In this state, when the cathode voltage is applied to the rotatable cathode 300a from the power supply 410a, the electrons emitted from the target 310a collide with the argon gas and the argon gas is ionized.

In order to prevent the target 310a from melting or the unevenness of the surface of the target 310a is increased due to the heat generated during the deposition process, the uniformity of the thin film uniformity is reduced, in this embodiment, the target cooling unit 600a and the heat pipe module ( 500a is provided inside the cathode backing tube 320a to cool the target 310a.

Looking at the operation of the target cooling unit 600a according to the present embodiment, in order to prevent the cooling efficiency from being lowered by increasing the temperature while the cooling water moves along the longitudinal direction of the cathode backing tube 320a, the cathode backing tube 320a A plurality of cooling flow paths (610a) are installed in the inlet and outlet in the opposite direction along the longitudinal direction of the).

In order to cool the cathode backing tube 320a along the longitudinal direction as a whole, the plurality of cooling passages 610a are connected to the rotary shaft housing 370a connected to one end side of the cathode backing tube 320a and the other end side. The block 380a is installed in communication.

In addition, the cooling shaft inlet 630a and the cooling water introduced into the cooling water inlet 630a are in communication with the cooling passage 610a in the rotary shaft housing 370a and the end block 380a and move along the cooling passage 610a. After the cooling water discharge port (650a) is discharged is installed.

Looking at the flow of the coolant by the target cooling unit (600a), as shown in Figure 8, after the coolant flows into the coolant inlet 630a installed in the rotating shaft housing (370a) in the longitudinal direction of the cathode backing tube (320a) It moves along the flow path and is discharged to the cooling water outlet 650a installed in the end block 380a. In addition, after the coolant flows into the coolant inlet 630a installed in the end block 380a, the coolant is moved along the longitudinal flow path of the cathode backing tube 320a and discharged to the coolant outlet 650a installed in the rotating shaft housing 370a. do.

Looking at the operation of the heat pipe module 500a according to the present embodiment, the heat absorbing portion of the plurality of heat pipes 510a is installed along the longitudinal direction of the cathode backing tube 320a.

In addition, a cooling passage on one side of the heat pipe 510a so that the heat absorbing portion of the heat pipe 510a can more effectively absorb heat sequentially transferred to the target 310a, the cathode backing tube 320a, and the cooling passage 610a. The plate 550a which contacts 610a is connected. Then, the heat sink 530a is coupled to the condensation part of the heat pipe 510a.

The heat sink 530a is disposed inside the end block 380a connected to one end side of the cathode backing tube 320a. 8 and 12, the heat sink 530a is disposed inside the end block 380a, but the heat sink 530a may also be disposed inside the rotary shaft housing 370a. In addition, the heat sink 530a may be disposed in the cathode backing tube 320a.

In order to improve the heat dissipation effect of the heat dissipation plate 530a, the heat dissipation plate cooling unit 390a for cooling the heat dissipation plate 530a is provided inside the end block 380a.

The heat sink cooling unit 390a cools the heat sink 530a by the coolant, and the heat sink cooling unit 390a communicates with the inside of the end block 380a to provide a coolant inflow path 391a into which the coolant flows, and a coolant inflow. The coolant discharge path 393a communicates with the furnace 391a and is discharged after the coolant cools the heat sink 530a.

 As such, by cooling the cathode backing tube 320a and the target 310a by using the target cooling unit 600a and the heat pipe module 500a, high frequency power can be stably supplied, thereby achieving high thin film deposition rate in a short process time. I can keep it.

Hereinafter, a sputtering apparatus according to still another embodiment of the present invention will be described.

FIG. 13 is a structural diagram schematically showing a sputtering device according to another embodiment of the present invention, and FIG. 14 is a perspective view showing a coupling state of a rotatable cathode, a target cooling unit, and a heat pipe module according to another embodiment of the present invention. FIG. 15 is a cross-sectional view illustrating the AA cross section of FIG. 14, and FIG. 16 is a cross-sectional view illustrating the BB cross section of FIG. 14.

FIG. 17 is an enlarged view of portion C of FIG. 14, and FIG. 18 is an enlarged view of portion D of FIG. 14.

13 to 18, a sputtering apparatus according to another embodiment of the present invention includes a chamber 100b for forming a deposition space for the substrate 10b and a substrate 10b. ) Is provided on the outer wall with a substrate transfer support 200b for supporting the transferable) and a target 310b and a target 310b rotatably provided inside the chamber 100b and providing a deposition material toward the substrate 10b. The rotatable cathode 300b having the cathode backing tube 320b and the magnet unit 330b provided inside the cathode backing tube 320b and the rotatable cathode 300b are provided on one side of the rotatable cathode 300b. An electrical connection part provided between the power supply part 410b for supplying power to the 300b and the rotatable cathode 300b and the power supply 410b, and electrically connecting the rotatable cathode 300b and the power supply 410b. 430b and adjacent to the inner wall of the cathode backing tube 320b, Circulate gaksu and the target cooling unit (600b) to cool the target (310b), doedoe provided inside of the cathode backing tube (320b) comprises a heat pipe module (500b) for cooling a target (310b).

The sputtering apparatus according to another embodiment of the present invention, the heat pipe module (To prevent the target 310b is melted due to the heat generated during the deposition process or the non-uniformity of the surface of the target 310b is increased to reduce the uniformity of the thin film) The target 310b is cooled by using the 500b) and the target cooling unit 600b.

According to another embodiment of the present invention, the chamber 100b, the substrate transfer support 200b, the rotatable cathode 300b, the power supply 410b, the electrical connection 430b and the target cooling unit 600b are Since the chamber 100, the substrate transfer support 200, the rotatable cathode 300, the power supply 410, the electrical connection 430, and the target cooling unit 600 according to the exemplary embodiment are described in detail. Will be omitted. Hereinafter, the heat pipe module 500b, which is a difference, will be described.

Referring to FIGS. 13 to 18, in the present embodiment, the heat pipe module 500b may be melted due to heat due to high frequency power supply, or the nonuniformity of the surface of the target 310b may be increased to reduce the uniformity of the thin film. Serves to prevent this from happening.

The heat pipe module 500b includes a jacket portion 550b provided along the longitudinal direction of the cathode backing tube 320b, a plurality of heat pipes 510b inserted into the jacket portion 550b and spaced apart from each other, It includes a heat sink 530b coupled to one side of the pipe 510b.

The jacket part 550b is provided inside the target cooling part 600b, particularly the cooling flow path 610b, and is disposed along the longitudinal direction of the cathode backing tube 320b. In addition, the jacket portion 550b may be disposed adjacent to the plurality of cooling passages 610b of the target cooling unit 600b, and preferably disposed to be in contact with the plurality of cooling passages 610b.

The jacket part 550b may be formed in a cylindrical shape corresponding to the case in which the cathode backing tube 320b is formed in a cylindrical shape, but is not limited thereto.

Then, a plurality of heat pipes 510b are inserted into the jacket portion 550b along the longitudinal direction of the cathode backing tube 320b. In this way, the heat pipe 510b is inserted into the jacket portion 550b and modularized so that the heat pipe 510b can be easily installed inside the cathode backing tube 320b.

In this embodiment, the heat pipe 510b absorbs heat sequentially transferred to the target 310b, the cathode backing tube 320b, and the cooling flow path 610b, and thus, the cathode backing tube 320b, the target 310b, and the cooling. It serves to cool the flow path 610b sequentially.

The heat absorbed by the heat absorbing portion of the heat pipe 510b is transferred to the condensation portion of the heat pipe 510b and discharged to the outside by the heat sink 530b coupled to the condensation portion of the heat pipe 510b.

In the present embodiment, the heat dissipation plate 530b is disposed inside the end block 380b in FIGS. 14 and 18 so as to effectively discharge the heat transferred to the condensation unit of the heat pipe 510b, but is not limited thereto. The heat sink 530b may be disposed inside the rotation shaft housing 370b. In addition, the heat sink 530b may be disposed in the cathode backing tube 320b.

In addition, as shown in FIG. 18, the heat dissipation plate cooling unit 390b for cooling the heat dissipation plate 530b is provided in the end block 380b, but the heat dissipation plate 530b is not limited thereto. When disposed in the heat sink cooling unit 390b may also be provided in the rotating shaft housing 370b.

The heat sink cooling unit 390b is provided to communicate with the inside of the end block 380b or the rotating shaft housing 370b in which the heat sink 530b is disposed, and the coolant inflow path 391b into which the coolant flows, and the coolant inflow path 391b. It is in communication with the cooling water includes a cooling water discharge path (393b) is discharged after cooling the heat sink (530b).

Referring to the operation of the sputtering apparatus according to another embodiment of the present invention configured as described above are as follows.

13 to 18, the substrate 10b is introduced through the substrate inlet 130b of the chamber 100b, is disposed at the deposition position on the substrate transfer support 200b, and the deposition process is started.

That is, for example, argon (Ar) gas is filled into the chamber 100b, and the chamber 100b maintains high vacuum while the inside thereof is sealed.

In this state, when the cathode voltage is applied to the rotatable cathode 300b from the power supply 410b, the electrons emitted from the target 310b collide with the argon (Ar) gas to ionize the argon (Ar) gas.

In order to prevent the target 310b from melting or the unevenness of the surface of the target 310b from increasing due to the heat generated during the deposition process, the uniformity of the thin film is reduced, in this embodiment, the target cooling unit 600b and the heat pipe module ( 500b) is provided inside the cathode backing tube 320b to cool the target 310b.

Looking at the operation of the target cooling unit 600b according to the present embodiment, the cathode backing tube 320b in order to prevent the cooling efficiency from lowering as the temperature rises while the coolant moves along the longitudinal direction of the cathode backing tube 320b. A plurality of cooling flow paths (610b) is installed to be introduced and discharged in the opposite direction along the longitudinal direction of the).

In order to cool the cathode backing tube 320b along the longitudinal direction as a whole, the plurality of cooling passages 610b are connected to one end of the rotating shaft housing 370b and the other end of the cathode backing tube 320b. The block 380b is installed in communication.

In addition, the cooling shaft inlet 630b and the cooling water introduced into the cooling water inlet 630b communicate with the cooling passage 610b in the rotary shaft housing 370b and the end block 380b and move along the cooling passage 610b. After the cooling water discharge port 650b discharged is installed.

Looking at the flow of the coolant by the target cooling unit (600b), as shown in Figure 14, after the coolant flows into the coolant inlet 630b installed in the rotating shaft housing (370b) in the longitudinal direction of the cathode backing tube (320b) It is moved along the flow path and is discharged to the cooling water outlet 650b installed in the end block 380b. In addition, after the coolant is introduced into the coolant inlet 630b installed in the end block 380b, the coolant is moved along the longitudinal flow path of the cathode backing tube 320b and discharged to the coolant outlet 650b installed in the rotary shaft housing 370b. do.

Looking at the operation of the heat pipe module 500b according to the present embodiment, the jacket portion 550b is installed along the longitudinal direction of the cathode backing tube 320b. Then, the heat absorbing portion of the heat pipe 510b is inserted into the jacket portion 550b.

Then, the heat sink 530b is coupled to the condensation part of the heat pipe 510b. The heat sink 530b is disposed inside the end block 380b connected to one end side of the cathode backing tube 320b. Meanwhile, although the heat sink 530b is disposed in the end block 380b in FIGS. 14 and 18, the heat sink 530b may be disposed in the rotary shaft housing 370b without being limited thereto. In addition, the heat sink 530b may be disposed in the cathode backing tube 320b.

In order to improve the heat dissipation effect of the heat dissipation plate 530b, the heat dissipation plate cooling unit 390b is provided inside the end block 380b to cool the heat dissipation plate 530b.

The heat sink cooling unit 390b cools the heat sink 530b by the coolant, and the heat sink cooling unit 390b is communicated with the inside of the end block 380b to provide a coolant inflow path 391b into which the coolant flows, and a coolant inflow. The coolant discharge path 393b communicates with the furnace 391b and is discharged after the coolant cools the heat sink 530b.

 As such, by cooling the cathode backing tube 320b and the target 310b by using the target cooling unit 600b and the heat pipe module 500b, the high frequency power can be stably supplied, resulting in high film deposition rate in a short process time. I can keep it.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

100, 100a, 100b: chamber 200, 200a, 200b: substrate transfer support
300, 300a, 300b: rotatable cathodes 310, 310a, 310b: target
320, 320a, 320b: cathode backing tubes 330, 330a, 330b: magnet unit
370, 370a, 370b: rotary shaft housings 380, 380a, 380b: endblock
390, 390a, 390b: heat sink cooling part 500, 500a, 500b: heat pipe module
510, 510a, 510b: heat pipes 530, 530a, 530b: heat sink
600, 600a, 600b: target cooling unit 610, 610a, 610b: cooling passage

Claims (13)

A chamber forming a deposition space for the substrate;
A rotatable type provided rotatably inside the chamber, the target providing a deposition material toward the substrate, a cathode backing tube provided on the outer wall of the target, and a magnet unit provided inside the cathode backing tube Cathode;
A target cooling unit provided adjacent to an inner wall of the cathode backing tube to circulate cooling water to cool the target; And
And a heat pipe module provided adjacent to the target cooling unit and cooling the target. The method of claim 1,
The target cooling unit,
And a plurality of cooling flow paths provided adjacent to an inner wall of the cathode backing tube, the cooling water flowing in and discharged in opposite directions to each other. 3. The method of claim 2,
The rotating cathode includes:
A cathode rotating shaft connected to one end of the cathode backing tube to rotate the cathode backing tube;
A rotating shaft housing having one end of the cathode rotating shaft accommodated therein; And
It is connected to the other end of the cathode backing tube, further comprising an end block for supporting the cathode backing tube,
The cooling flow path, the sputter device, characterized in that the rotary shaft housing and the end block is installed in communication. The method of claim 3,
Each of the rotary shaft housing and the end block,
A cooling water inlet which communicates with the cooling flow path and into which the cooling water flows; And
The sputtering device is in communication with the cooling passage, the cooling water discharge port is discharged after the cooling water is moved along the cooling passage is provided. The method of claim 3,
The magnet unit,
It includes a plurality of magnets disposed to be spaced apart from each other on the base pole plate provided inside the cathode backing tube to generate a magnetic field,
The heat pipe module,
A plurality of heat pipes provided along a length direction of the cathode backing tube and installed between the plurality of magnets; And
Sputtering apparatus comprising a heat sink coupled to one side of the heat pipe. The method of claim 5,
The heat-
Sputtering apparatus, characterized in that disposed in at least one of the rotary shaft housing and the end block. The method of claim 3,
The heat pipe module,
A plurality of heat pipes provided along the longitudinal direction of the cathode backing tube;
A plate connected to one side of the heat pipe and disposed in contact with the plurality of cooling passages; And
Sputtering apparatus comprising a heat sink coupled to one side of the heat pipe. The method of claim 7, wherein
The heat-
Sputtering apparatus, characterized in that disposed in at least one of the rotary shaft housing and the end block. The method of claim 3,
The heat pipe module,
A jacket part provided along a length direction of the cathode backing tube;
A plurality of heat pipes inserted into the jacket and spaced apart from each other; And
Sputtering apparatus comprising a heat sink coupled to one side of the heat pipe. 10. The method of claim 9,
The jacket portion,
The sputtering device is disposed to be in contact with the plurality of cooling passages, and has a shape corresponding to the shape of the cathode backing tube. 10. The method of claim 9,
The heat-
Sputtering apparatus, characterized in that disposed in at least one of the rotary shaft housing and the end block. According to claim 6, 8, 11,
The rotating cathode includes:
And a heat sink cooler provided in the rotary shaft housing or the end block in which the heat sink is disposed and circulating coolant to cool the heat sink. The method of claim 12,
The heat sink cooling unit,
A cooling water inflow path provided in communication with the inside of the rotary shaft housing or the end block in which the heat dissipation plate is disposed, and into which the cooling water flows; And
And a cooling water discharge path communicating with the cooling water inflow path and discharged after the cooling water cools the heat sink.

Images