WO2007035050A1

WO2007035050A1 - Sputtering deposition device

Info

Publication number: WO2007035050A1
Application number: PCT/KR2006/003759
Authority: WO
Inventors: Chang-Hun Hwang; Yong-Ki Kim; You-Tae Won
Original assignee: Doosan Mecatec Co., Ltd.
Priority date: 2005-09-23
Filing date: 2006-09-21
Publication date: 2007-03-29
Also published as: WO2007035050B1; KR100713848B1; KR20070034159A

Abstract

Disclosed is a sputtering deposition device for depositing a thin film on a substrate. The sputtering deposition device comprises a substrate fixing part configured to fix a substrate; a target mounting member configured to mount a target and form an opening part on a front surface or a part of the top thereof; and a blocking shield provided on the top of the target mounting member. The present invention can minimize ion damage and heat damage of an organic thin film by blocking particles having strong energy and scanning the substrate in a horizontal direction.

Description

SPUTTERING DEPOSITION DEVICE

Technical Field

[1] This invention relates to a magnetron sputtering deposition device for depositing an electrode thin film on an organic thin film deposited on a substrate, and more particularly, to a sputtering device that can minimize ion damage and heat damage of an organic thin film by blocking particles having strong energy and scanning the substrate in a horizontal direction. Background Art

[2] Usually, an organic light-emitting diode (OLED) is divided into various kinds according to an available organic material, a light emitting direction and a driving method.

[3] According to the available organic material, a polymer light-emitting diode (PLED) is manufactured by using polymer or small molecule.

[4] According to the light emitting direction, for example, a front light emitting surface and a rear light emitting surface, the OLED is divided into a top-emission organic light-emitting diode (TEOLED), a bottom-emission organic light-emitting diode (BEOLED), and a double emission OLED.

[5] The OLEDs are activated through a current driving method that relies on either an active matrix (AM) scheme or a passive matrix (PM) scheme. The current driving method of the PM scheme has been conventionally used in the field of a small display panel. Accordingly, the driving method of the PM scheme has been restricted, because it has been required for a large-sized substrate.

[6] Further, the driving method of the PM schematic has an advantage in that the

OLEDs can be easily manufactured by cathode electrodes and anode electrodes. However, if the length of the electrodes become longer, electrical signals applied to the electrodes become weaker. As a result thereof, their power consumption is significantly high, and a brightness difference between ends of each electrode becomes larger.

[7] On the other hand, the driving method of the AM schematic using a Thin Film

Transistor (TFT) technology of a liquid crystal display (LCD) is a method for driving a thin film transistor arranged on each pixel. The power consumption of the method is relatively low, and the brightness difference does not occur. Thus, a large-sized substrate can be easily manufactured. However, it is difficult to manufacture the AMOLED because the TFT has to be arranged in each pixel.

[8] The PMOLED is manufactured by depositing a thin film of a transparent anode electrode, depositing an organic thin film, and depositing an cathode electrode, while the AMOLED is manufactured by depositing the cathode electrode and organic thin film, and the thin film of the transparent anode electrode. In this time, the deposition is performed by a sputtering method. For example, a magnetron sputtering method is mainly used during the mass production of OLEDs.

[9] Referring to FIG.l, in a conventional sputtering deposition device, a substrate 100, on which an organic thin film 200 is deposited, is placed on the top of the inside of a chamber. A target mounting member 300 is opposite to the substrate 100. A target 340 is placed on the target mounting member 300. The targer mounting member 300 includes a lower plate 310 on which the target 340 is placed, and a shield 320 extended to the top of the lower plate so as to surround a side and a part of the top of the target. The top of the target 340 is opened. The substrate 100 is grounded.

[10] Next, when a negative voltage is applied to the target 340 and a process gas such as argon (Ar) is injected inside a chamber, free electrons accelerated by electric field collision gas particles to produce plasma 400.

[11] In this time, positive ion particles composing the plasma 400 conflict with electrons that are accelerated by a spiral movement about lines of magnetic force produced by the magnetic field of a permanent magnetic provided in a sputter and the magnetic field produced by a voltage across a cathode electrode.

[12] The conflicted positive ion particles conflict strongly with the target 340 to transfer energy. Accordingly, the sputtered particles are deposited on the organic thin film 200 on the substrate 100 to form an electrode thin film.

[13] The conventional sputtering apparatus deposits the sputtering particles emitted from the sputter target on the opposite substrate without obstacles. Therefore, the sputtered particles transfer their own energy to the organic thin film on the substrate, thereby allowing ion damage and thermal damage to be caused. Disclosure of Invention Technical Problem

[14] An object of the present invention is to provide a sputtering deposition device that can minimize ion damage and heat damage of an organic thin film by blocking particles having strong energy and scanning the substrate in a horizontal direction. Technical Solution

[15] According to an aspect of the present invention, there is provided a sputtering deposition device, which comprises a substrate fixing part configured to fix a substrate; a target mounting member configured to mount a target and form an opening part on a front surface or a part of the top thereof; and a blocking shield provided on the top of the target mounting member. [16] Preferably, the substrate fixing part further comprises a horizontal moving unit configured to move the substrate in a horizontal direction. [17] Preferably, the target mounting member further comprises an elevating unit configured to go up and come down.

[18] A refrigerant flowing line is formed inside the blocking shield.

[19] The sputtering deposition device further comprises a refrigerant supplying unit configured to supply refrigerant to the refrigerant flowing line. [20] The sputtering depostion device further comprises a voltage applying unit configured to apply a voltage to the blocking shield. [21] Preferably, the blocking shield may be formed to be curved toward the upper direction, or be slanted to a predetermined angel, and a guide is formed by extending to have a predetermined angel from an end part of the opening part.

Advantageous Effects

[22] The present invention can minimize ion damage and heat damage of an organic thin film by blocking particles having strong energy and scanning the substrate in a horizontal direction.

Brief Description of the Drawings [23] Example embodiments of the present invention will become more apparent by describing in detail example embodiments of the present invention with reference to the accompanying drawing, in which: [24] FIG. 1 is a schematic diagram illustrating a use status of a conventional sputtering deposition device; [25] FIG. 2 is a schematic diagram illustrating a use status of a sputtering deposition device according to an exemplary embodiment of the present invention; [26] FIG. 3 is a perspective diagram illustrating an example of a target mounting member according to the exemplary embodiment of the present invention; [27] FIG. 4 is a perspective diagram illustrating an example of a blocking shield according to the exemplary embodiment of the present invention; [28] FIGS. 5A and B is a perspective diagram illustrating another example of the blocking shield according to the exemplary embodiment of the present invention; and [29] FIG. 6 is a perspective diagram illustrating another example of a target mounting member according to the exemplary embodiment of the present invention.

Best Mode for Carrying Out the Invention [30] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing. [31] Referring to FIG. 2, a sputtering deposition device includes a substrate fixing part

11, a target mounting member 30 and a blocking shield 50. [32] The substrate fixing part 11 is provided with a horizontal moving unit to move a substrate 10 by a back and forth motion in a horizontal direction. By scanning the substrate 10 in the horizontal direction, thermal damage of an organic thin film 20 deposited on the substrate 10 can be minimized.

[33] The targe mounting member 30 includes a lower plate 31 and a side wall 32, and particularly, an elevating unit 60 for going up and coming down the targer mounting member 30. A distance 1 between a target 34 and the substrate 10 can be controlled by the elevating unit 60. There is a need to control the distance 1 considering a deposition rate and damage according to a kind of the target 34. The control of the distance 1 is performed by the elevating unit 60.

[34] A blocking shield 50 spaced by a predetermined distance is formed on the top of an opening part formed between two side walls 32. The blocking shield 50 is supported by a supporting pole that is installed perpendicular to the side walls 32. The blocking shield 50 blocks particles with strong energy, so that ion damage of the organic thin film 20 caused by the particles with strong energy can be minimized.

[35] Referring to FIG. 3, the sputtering deposition device according to the present invention further includes a voltage applying unit 80. The voltage applying unit 80 applies a voltage to the blocking shield 50. If necessary, the voltage applying unit 80 can control the progress of plasma by applying a negative voltage or a positive voltage.

[36] Referring to FIG. 4, a plurality of flow lines 51 are formed inside the blocking shield 50. The flow lines pass through refrigerant such as cooling gases or cooling water to control temperature of the blocking shield 50.

[37] Referring to FIGS. 5A and 5B, the blocking shields 50' and 50" may be formed to be curved toward an upper part, as shown in FIG. 5A, and to be slanted at a constant angle (α), as shown in FIG. 5B, where α is 10°to 180°. The particles with strong energy are deposited on the substrate 10 after conflicting with the blocking shields 50' and 50" and being refracted. The particles lose their own energy during the conflicting, and thus the ion damage of the substrate can be reduced.

[38] Referring to FIG. 6, a guide 33 is formed on an end of the side wall 32 to be extended at a predetermined angle (β), where β is 0°to 90°, preferably above 90°.

[39] An operation of the sputtering deposition device according to the present invention will be explained with reference to FIG. 6.

[40] The sputtering deposition device forms the blocking shield on the top of the opening part of the target mounting member 30, so that particles flown from the target 34 via a direct path are blocked. Accordingly, the particles are blocked or refracted by the blocking shield 50. As a result thereof, only particles flown into a gab between the side wall 32 and the blocking shield 50 are deposited on the substrate 10, thereby allowing ion demage to be minimized. Further, the sputtering deposition device can deposit while reducing thermal demage by scanning the substrate 10 in the horizontal direction.

[41] Further, flying orbit of the particles can be controlled by applying the positive voltage or negative voltage to the blocking shield 50, and the temperature of the blocking shield 50 can be controlled by supplying cooling water or cooling gases to the blocking shield 50.

[42] It should be understood by those of ordinary skill in the art that various replacement, modifications and changes in the form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims. Therefore, it is to be appreciated that the above described embodiments are for purpose of illustration only and are not be construed as limitations of the invention.

Claims

AMENDED CLAIMS received bythe International Bureau on 09 Maarch 2007 (09.03.2007)

1. (Amended) A sputtering deposition device for depositing a thin film on a substrate, comprising:

a substrate fixing part configured to fix a substrate!

a target mounting member configured to mount a target and form an opening part on a front surface or a part of the top thereof; and a blocking shield provided on the top of the target mounting member and wherein the blocking shield may be formed to be curved toward the upper direction, or be slanted to a predetermined angel.

2. The sputtering deposition device of claim 1, wherein the substrate fixing part further comprises a horizontal moving unit configured to move the substrate in a horizontal direction.

3. The sputtering deposition device of claim 1, wherein the target mounting member further comprises an elevating unit configured to go up and come down.

4. The sputtering deposition device of claim 1, wherein a refrigerant flowing line is formed inside the blocking shield, and further comprises a refrigerant supplying unit configured to supply refrigerant to the refrigerant flowing line.

5. (Cancelled)

6. The sputtering deposition device of claim 1, further comprising a voltage applying unit configured to apply a voltage to the blocking shield.

7. The sputtering deposition device of claim 1, wherein a guide is formed by extending to have a predetermined angel from an end part of the opening part .

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